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GBPC2502M T0G GBPC2502M T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-M
товар відсутній
GBPC2502W T0G GBPC2502W T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-W
товар відсутній
GBPC2506 T0G GBPC2506 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 600V 25A GBPC
товар відсутній
GBPC2506M T0G GBPC2506M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-M
товар відсутній
GBPC2506W T0G GBPC2506W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC2508 T0G GBPC2508 T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBPC
товар відсутній
GBPC2508M T0G GBPC2508M T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-M
товар відсутній
GBPC2508W T0G GBPC2508W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC2510 T0G GBPC2510 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC2510M T0G GBPC2510M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC2510W T0G GBPC2510W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3501W T0G GBPC3501W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3502W T0G GBPC3502W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBPC3506 T0G GBPC3506 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3506M T0G GBPC3506M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3506W T0G GBPC3506W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3508 T0G GBPC3508 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3508M T0G GBPC3508M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3508W T0G GBPC3508W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3510 T0G GBPC3510 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3510M T0G GBPC3510M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3510W T0G GBPC3510W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC40005 T0G GBPC40005 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 50V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC40005M T0G GBPC40005M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 50V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC4001 T0G GBPC4001 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 100V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC4001M T0G GBPC4001M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 100V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC4002 T0G GBPC4002 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 200V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC4002M T0G GBPC4002M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 200V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC4004 T0G GBPC4004 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 400V 40A GBPC40
товар відсутній
GBPC4004M T0G GBPC4004M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 400V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
GBPC4006 T0G GBPC4006 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 600V 40A GBPC40
товар відсутній
GBPC4006M T0G GBPC4006M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 600V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC50005 T0G GBPC50005 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 50V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC50005M T0G GBPC50005M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 50V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC5006 T0G GBPC5006 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 600V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC5006M T0G GBPC5006M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 600V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC5008 T0G GBPC5008 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 800V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
GBPC5008M T0G GBPC5008M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 800V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
GBPC5010 T0G GBPC5010 T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 1KV 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC5010M T0G GBPC5010M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 1KV 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBU2504 D2 Taiwan Semiconductor Corporation GBU2504%20SERIES_B1711.pdf Description: BRIDGE RECT 1PHASE 400V 25A GBU
товар відсутній
GBU2506 D2 Taiwan Semiconductor Corporation GBU2504%20SERIES_B1711.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBU
товар відсутній
5.0SMDJ17AHM6G 5.0SMDJ17AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 17V 27.6V DO214AB
товар відсутній
5.0SMDJ17A M6G 5.0SMDJ17A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 17V 27.6V DO214AB
товар відсутній
5.0SMDJ45AHM6G 5.0SMDJ45AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
5.0SMDJ45A M6G 5.0SMDJ45A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
5.0SMDJ58AHM6G 5.0SMDJ58AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
5.0SMDJ58A M6G 5.0SMDJ58A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
5.0SMDJ60AHM6G 5.0SMDJ60AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 60V 96.8V DO214AB
товар відсутній
5.0SMDJ60A M6G 5.0SMDJ60A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 60V 96.8V DO214AB
товар відсутній
5.0SMDJ70AHM6G 5.0SMDJ70AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
5.0SMDJ70A M6G 5.0SMDJ70A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
5.0SMDJ75AHM6G 5.0SMDJ75AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 75V 121V DO214AB
товар відсутній
5.0SMDJ75A M6G 5.0SMDJ75A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 75V 121V DO214AB
товар відсутній
5.0SMDJ85AHM6G 5.0SMDJ85AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5.0SMDJ85A M6G 5.0SMDJ85A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5.0SMDJ90AHM6G 5.0SMDJ90AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 90V 146V DO214AB
товар відсутній
5.0SMDJ90A M6G 5.0SMDJ90A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 90V 146V DO214AB
товар відсутній
1PGSMB5952HR5G 1PGSMB5952HR5G Taiwan Semiconductor Corporation 1PGSMB5926%20SERIES_A1705.pdf Description: DIODE ZENER 130V 3W DO214AA
товар відсутній
1PGSMB5952 R5G 1PGSMB5952 R5G Taiwan Semiconductor Corporation 1PGSMB5926%20SERIES_A1705.pdf Description: DIODE ZENER 130V 3W DO214AA
товар відсутній
GBPC2502M T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2502M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-M
товар відсутній
GBPC2502W T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2502W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-W
товар відсутній
GBPC2506 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
товар відсутній
GBPC2506M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-M
товар відсутній
GBPC2506W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC2508 T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2508 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
товар відсутній
GBPC2508M T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2508M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-M
товар відсутній
GBPC2508W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2508W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC2510 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC2510M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC2510W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3501W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3502W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3502W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
GBPC3506 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3506 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3506M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3506M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3506W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3506W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
GBPC3508 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3508 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3508M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3508M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3508W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3508W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
GBPC3510 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3510 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3510M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3510M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC3510W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3510W T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
GBPC40005 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC40005 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC40005M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC40005M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC4001 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4001 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC4001M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4001M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC4002 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4002 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC4002M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4002M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC4004 T0G GBPC40_50%20SERIES_E2103.pdf
GBPC4004 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 40A GBPC40
товар відсутній
GBPC4004M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4004M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
GBPC4006 T0G GBPC40_50%20SERIES_E2103.pdf
GBPC4006 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 40A GBPC40
товар відсутній
GBPC4006M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC4006M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC50005 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC50005 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC50005M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC50005M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
GBPC5006 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5006 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC5006M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5006M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
GBPC5008 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5008 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
GBPC5008M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5008M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
GBPC5010 T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5010 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBPC5010M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5010M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
GBU2504 D2 GBU2504%20SERIES_B1711.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
товар відсутній
GBU2506 D2 GBU2504%20SERIES_B1711.pdf
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
товар відсутній
5.0SMDJ17AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ17AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17V 27.6V DO214AB
товар відсутній
5.0SMDJ17A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ17A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17V 27.6V DO214AB
товар відсутній
5.0SMDJ45AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ45AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
5.0SMDJ45A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ45A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
5.0SMDJ58AHM6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ58AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
5.0SMDJ58A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ58A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
товар відсутній
5.0SMDJ60AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ60AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60V 96.8V DO214AB
товар відсутній
5.0SMDJ60A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ60A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 60V 96.8V DO214AB
товар відсутній
5.0SMDJ70AHM6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ70AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
5.0SMDJ70A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ70A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
5.0SMDJ75AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ75AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 75V 121V DO214AB
товар відсутній
5.0SMDJ75A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ75A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 75V 121V DO214AB
товар відсутній
5.0SMDJ85AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ85AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5.0SMDJ85A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ85A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 85VWM 137VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 36.5A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товар відсутній
5.0SMDJ90AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ90AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90V 146V DO214AB
товар відсутній
5.0SMDJ90A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ90A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 90V 146V DO214AB
товар відсутній
1PGSMB5952HR5G 1PGSMB5926%20SERIES_A1705.pdf
1PGSMB5952HR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 3W DO214AA
товар відсутній
1PGSMB5952 R5G 1PGSMB5926%20SERIES_A1705.pdf
1PGSMB5952 R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 3W DO214AA
товар відсутній
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