Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25352) > Сторінка 168 з 423
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SR16100 C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR16100HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR16100PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR16100PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK26A M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1KSMB33A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7V DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.9A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZW06-13 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8V 27.2V DO204AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 34.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 17.4A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 34.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 17.4A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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SMBJ30CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBJ33CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AAPart Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.3V Voltage - Breakdown (Min): 36.7V Bidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 33V Current - Peak Pulse (10/1000µs): 11.8A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SMBJ33CAHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| KBP202G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| KBP202G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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1SMB5927 M4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1SMB5927 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AACurrent - Reverse Leakage @ Vr: 1 µA @ 9.1 V Power - Max: 3 W Supplier Device Package: DO-214AA (SMB) Impedance (Max) (Zzt): 6.5 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1SMB5927HM4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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1SMB5927HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V Power - Max: 3 W Grade: Automotive Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Tape & Reel (TR) Impedance (Max) (Zzt): 6.5 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| TSM3404CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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BZD17C13P RQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 800MW SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD17C13P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 800MW SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C13PHRVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMAOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C13P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C13P RUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C13PHMTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C13PHRUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMATolerance: ±6.41% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S5KBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AA |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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S5KBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AA |
на замовлення 2141 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A 8PDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A 8PDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V |
на замовлення 1122 шт: термін постачання 21-31 дні (днів) |
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| S1MFL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123FL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| S1MFL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123FL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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MBR760 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220ACCurrent - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBR760HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HER1002G C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 100V 10A TO220AB Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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HER1005G C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 400V 10A TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CA R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CA R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CAHR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CA B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P4KE91CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8V 125V DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR2060HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO220ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR2060PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 60V 20A TO247ADSupplier Device Package: TO-247AD (TO-3P) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SR2060PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 60V 20A TO247ADSupplier Device Package: TO-247AD (TO-3P) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 500 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TSF40L45C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 45V ITO220AB |
на замовлення 963 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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GBPC1501 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 15A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1501M T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 100V 15A GBPC-M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1502 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 200V 15A GBPCCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBPC Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1502M T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 200V 15A GBPC-MCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: GBPC-M Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-M Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1504 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 15A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1504M T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 15A GBPC-M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBPC1506 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 15A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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GBPC1506M T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 15A GBPC-M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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GBPC1508 T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 15A GBPC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
P6SMB170A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 145V 234V DO214AA |
товару немає в наявності |
В кошику од. на суму грн. |
| SR16100 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
товару немає в наявності
В кошику
од. на суму грн.
| SR16100HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
товару немає в наявності
В кошику
од. на суму грн.
| SR16100PT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
товару немає в наявності
В кошику
од. на суму грн.
| SR16100PTHC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
товару немає в наявності
В кошику
од. на суму грн.
| SK26A M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO214AC
Description: DIODE SCHOTTKY 60V 2A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| 1KSMB33A M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BZW06-13 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Description: TVS DIODE 12.8V 27.2V DO204AC
товару немає в наявності
В кошику
од. на суму грн.
| SMA6J22AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMA6J22AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
на замовлення 26 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 10+ | 37.64 грн |
| SMBJ30CAHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Description: TVS DIODE 30VWM 48.4VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ33CA M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SMBJ33CAHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Description: TVS DIODE 33VWM 53.3VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| KBP202G C2 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| KBP202G C2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5927 M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5927 R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5927HM4G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5927HR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: DIODE ZENER 12V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| TSM3404CX RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BZD17C13P RQG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD17C13P R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C13PHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C13P R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C13P RUG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C13PHMTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C13PHRUG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| S5KBHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S5KBHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
на замовлення 2141 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TSM033NB04CR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| TSM033NB04CR RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
на замовлення 1122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 135.29 грн |
| 10+ | 82.81 грн |
| 100+ | 56.00 грн |
| 500+ | 41.75 грн |
| 1000+ | 39.28 грн |
| S1MFL RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
товару немає в наявності
В кошику
од. на суму грн.
| S1MFL RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
товару немає в наявності
В кошику
од. на суму грн.
| RS2DFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MBR760 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| MBR760HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| HER1002G C0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 10A TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: DIODE ARRAY GP 100V 10A TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
товару немає в наявності
В кошику
од. на суму грн.
| HER1005G C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 10A TO220AB
Description: DIODE ARRAY GP 400V 10A TO220AB
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CA R0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CAHR0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CA R1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CAHR1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CA A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CAHA0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CA B0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE91CAHB0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8V 125V DO204AL
Description: TVS DIODE 77.8V 125V DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| SR2060HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 60V 20A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SR2060PT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 60V 20A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Description: DIODE ARRAY GP 60V 20A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
товару немає в наявності
В кошику
од. на суму грн.
| SR2060PTHC0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 60V 20A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARRAY GP 60V 20A TO247AD
Supplier Device Package: TO-247AD (TO-3P)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| TSF40L45C C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
Description: DIODE ARRAY SCHOTT 45V ITO220AB
на замовлення 963 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| GBPC1501 T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 15A GBPC
Description: BRIDGE RECT 1PHASE 100V 15A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1501M T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 15A GBPC-M
Description: BRIDGE RECT 1P 100V 15A GBPC-M
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1502 T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Packaging: Tray
Description: BRIDGE RECT 1PHASE 200V 15A GBPC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1502M T0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 15A GBPC-M
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-M
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-M
Packaging: Tray
Description: BRIDGE RECT 1P 200V 15A GBPC-M
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Active
Supplier Device Package: GBPC-M
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC-M
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1504 T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 15A GBPC
Description: BRIDGE RECT 1PHASE 400V 15A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1504M T0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 15A GBPC-M
Description: BRIDGE RECT 1P 400V 15A GBPC-M
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1506 T0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBPC
Description: BRIDGE RECT 1PHASE 600V 15A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1506M T0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 15A GBPC-M
Description: BRIDGE RECT 1P 600V 15A GBPC-M
товару немає в наявності
В кошику
од. на суму грн.
| GBPC1508 T0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBPC
Description: BRIDGE RECT 1PHASE 800V 15A GBPC
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB170A M4G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 145V 234V DO214AA
Description: TVS DIODE 145V 234V DO214AA
товару немає в наявності
В кошику
од. на суму грн.
















