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SS315 R6G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
SS315 R6 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY DO214AB
товару немає в наявності
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SS315H SS315H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 150V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
GBU2507 GBU2507 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: DIODE BRIDGE 25A 1000V GBU
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
на замовлення 738 шт:
термін постачання 21-31 дні (днів)
4+105.46 грн
20+82.92 грн
100+64.51 грн
500+51.31 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
GBU2506 GBU2506 Taiwan Semiconductor Corporation GBU2504 SERIES_E2205.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+137.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SMCJ110A V6G SMCJ110A V6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
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В кошику  од. на суму  грн.
SMCJ110A V7G SMCJ110A V7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
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В кошику  од. на суму  грн.
SMCJ110A M6G SMCJ110A M6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 110VWM 177VC DO214AB
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В кошику  од. на суму  грн.
HS1DFS HS1DFS Taiwan Semiconductor Corporation pdf.php?pn=HS1DFS Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1DFS HS1DFS Taiwan Semiconductor Corporation pdf.php?pn=HS1DFS Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6508 шт:
термін постачання 21-31 дні (днів)
10+32.51 грн
14+21.91 грн
100+11.05 грн
500+9.19 грн
1000+7.15 грн
2000+6.40 грн
5000+6.16 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
ES1DFS ES1DFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
14000+6.38 грн
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
ES1DFS ES1DFS Taiwan Semiconductor Corporation ES1BFS SERIES_C2103.pdf Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 27375 шт:
термін постачання 21-31 дні (днів)
9+35.68 грн
15+21.07 грн
50+15.26 грн
100+12.53 грн
500+9.38 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
HS2DFS HS2DFS Taiwan Semiconductor Corporation pdf.php?pn=HS2DFS Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS2DFS HS2DFS Taiwan Semiconductor Corporation pdf.php?pn=HS2DFS Description: DIODE GEN PURP 200V 2A SOD128
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
12+28.55 грн
15+21.30 грн
100+12.77 грн
500+11.10 грн
1000+7.55 грн
2000+6.95 грн
5000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
RS2DFS RS2DFS Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
RS2DFS RS2DFS Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
10+34.10 грн
13+24.59 грн
100+13.93 грн
500+8.66 грн
1000+6.64 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
HS2GFS HS2GFS Taiwan Semiconductor Corporation pdf.php?pn=HS2GFS Description: DIODE GEN PURP 400V 2A SOD128
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS2GFS HS2GFS Taiwan Semiconductor Corporation pdf.php?pn=HS2GFS Description: DIODE GEN PURP 400V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
12+28.55 грн
15+21.30 грн
100+12.77 грн
500+11.10 грн
1000+7.55 грн
2000+6.95 грн
5000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
HS1GFS HS1GFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1GFS HS1GFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
товару немає в наявності
В кошику  од. на суму  грн.
HS1MFS HS1MFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1MFS HS1MFS Taiwan Semiconductor Corporation HS1DFS SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
12+26.96 грн
20+15.88 грн
50+11.44 грн
100+9.37 грн
500+6.94 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TLD8S33AH TLD8S33AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
750+85.02 грн
1500+76.23 грн
2250+74.83 грн
Мінімальне замовлення: 750 шт
В кошику  од. на суму  грн.
TLD8S33AH TLD8S33AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2380 шт:
термін постачання 21-31 дні (днів)
2+239.46 грн
10+150.50 грн
100+105.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
RS1JAL RS1JAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
RS1JAL RS1JAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RS1JL MHG RS1JL MHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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SK315B M4G SK315B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 150V 3A DO214AA
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SK315BHM4G SK315BHM4G Taiwan Semiconductor Corporation SK32B%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 150V 3A DO214AA
товару немає в наявності
 Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SK315AHR3G SK315AHR3G Taiwan Semiconductor Corporation SK32AH%20SERIES_B2304.pdf Description: DIODE SCHOTTKY 150V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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SK315BHR5G SK315BHR5G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 150V 3A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK315AHM2G SK315AHM2G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 150V 3A DO214AC
товару немає в наявності
 Мінімальне замовлення: 15000 шт
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SK55B R5G SK55B R5G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55B M4G SK55B M4G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55BHR5G SK55BHR5G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
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SK55BHM4G SK55BHM4G Taiwan Semiconductor Corporation SK52B%20SERIES_P2102.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55C R7 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55C R6 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55BH SK55BH Taiwan Semiconductor Corporation SK52BH SERIES_B2309.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55C SK55C Taiwan Semiconductor Corporation SK52C SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55CH SK55CH Taiwan Semiconductor Corporation SK52CH SERIES_C2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55C R6G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
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SK55C M6 Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55B SK55B Taiwan Semiconductor Corporation SK52B SERIES_Q2309.pdf Description: DIODE SCHOTTKY 50V 5A DO214AA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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PGSMAJ30AHF4G PGSMAJ30AHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 30VWM 48.4VC DO214AC
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TSM60NC1R5CP ROG TSM60NC1R5CP ROG Taiwan Semiconductor Corporation TSM60NC1R5CP_C2209.pdf Description: 600V, 3A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+33.36 грн
5000+30.60 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TSM60NC1R5CP ROG TSM60NC1R5CP ROG Taiwan Semiconductor Corporation TSM60NC1R5CP_C2209.pdf Description: 600V, 3A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 10355 шт:
термін постачання 21-31 дні (днів)
4+80.09 грн
10+63.60 грн
100+49.43 грн
500+39.32 грн
1000+32.03 грн
Мінімальне замовлення: 4 шт
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TSM500N15CS RLG TSM500N15CS RLG Taiwan Semiconductor Corporation TSM500N15CS_A2112.pdf Description: 150V, 11A, SINGLE N-CHANNEL POWE
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 12.7W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+31.00 грн
Мінімальне замовлення: 2500 шт
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TSM500N15CS RLG TSM500N15CS RLG Taiwan Semiconductor Corporation TSM500N15CS_A2112.pdf Description: 150V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 12.7W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5450 шт:
термін постачання 21-31 дні (днів)
4+102.29 грн
10+69.10 грн
100+37.96 грн
500+34.18 грн
1000+31.22 грн
Мінімальне замовлення: 4 шт
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P4KE18CA B0G P4KE18CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 15.3VWM 25.5VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 16.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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P4KE18CA A0G P4KE18CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 15.3VWM 25.5VC DO204AL
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RS3MH RS3MH Taiwan Semiconductor Corporation RS3AH SERIES_B2304.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.91 грн
Мінімальне замовлення: 3000 шт
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RS3M R7 Taiwan Semiconductor Corporation Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M R6 Taiwan Semiconductor Corporation Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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KBL603G KBL603G Taiwan Semiconductor Corporation kbl601g.pdf Description: DIODE BRIDGE 6A 200V KBL
товару немає в наявності
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RTBS60M RTBS60M Taiwan Semiconductor Corporation pdf.php?pn=RTBS60M Description: 500NS, 6A, 1000V, FAST RECOVERY
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: TBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+28.12 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
RTBS60M RTBS60M Taiwan Semiconductor Corporation pdf.php?pn=RTBS60M Description: 500NS, 6A, 1000V, FAST RECOVERY
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: TBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 2171 шт:
термін постачання 21-31 дні (днів)
5+65.81 грн
10+55.05 грн
100+38.09 грн
500+29.86 грн
Мінімальне замовлення: 5 шт
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TBS610 M1G TBS610 M1G Taiwan Semiconductor Corporation TBS606%20SERIES_B2103.pdf Description: 6A 1000V STANDARD BRIDGE RECTIFI
товару немає в наявності
 Мінімальне замовлення: 1800 шт
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SS315 R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
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SS315 R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
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SS315H
SS315H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
товару немає в наявності
Мінімальне замовлення: 3000 шт
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GBU2507 GBU2504 SERIES_E2205.pdf
GBU2507
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 25A 1000V GBU
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
на замовлення 738 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+105.46 грн
20+82.92 грн
100+64.51 грн
500+51.31 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
GBU2506 GBU2504 SERIES_E2205.pdf
GBU2506
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+137.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SMCJ110A V6G SMCJ SERIES_R2004.pdf
SMCJ110A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ110A V7G SMCJ SERIES_R2004.pdf
SMCJ110A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ110A M6G SMCJ SERIES_R2004.pdf
SMCJ110A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
HS1DFS pdf.php?pn=HS1DFS
HS1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1DFS pdf.php?pn=HS1DFS
HS1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6508 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+32.51 грн
14+21.91 грн
100+11.05 грн
500+9.19 грн
1000+7.15 грн
2000+6.40 грн
5000+6.16 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
ES1DFS ES1BFS SERIES_C2103.pdf
ES1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
14000+6.38 грн
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
ES1DFS ES1BFS SERIES_C2103.pdf
ES1DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 27375 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+35.68 грн
15+21.07 грн
50+15.26 грн
100+12.53 грн
500+9.38 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
HS2DFS pdf.php?pn=HS2DFS
HS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS2DFS pdf.php?pn=HS2DFS
HS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+28.55 грн
15+21.30 грн
100+12.77 грн
500+11.10 грн
1000+7.55 грн
2000+6.95 грн
5000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
RS2DFS
RS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
RS2DFS
RS2DFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+34.10 грн
13+24.59 грн
100+13.93 грн
500+8.66 грн
1000+6.64 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
HS2GFS pdf.php?pn=HS2GFS
HS2GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS2GFS pdf.php?pn=HS2GFS
HS2GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
на замовлення 6030 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+28.55 грн
15+21.30 грн
100+12.77 грн
500+11.10 грн
1000+7.55 грн
2000+6.95 грн
5000+6.55 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
HS1GFS HS1DFS SERIES_C2103.pdf
HS1GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1GFS HS1DFS SERIES_C2103.pdf
HS1GFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
товару немає в наявності
В кошику  од. на суму  грн.
HS1MFS HS1DFS SERIES_C2103.pdf
HS1MFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
HS1MFS HS1DFS SERIES_C2103.pdf
HS1MFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+26.96 грн
20+15.88 грн
50+11.44 грн
100+9.37 грн
500+6.94 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
TLD8S33AH TLD8S10AH SERIES_E2310.pdf
TLD8S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
750+85.02 грн
1500+76.23 грн
2250+74.83 грн
Мінімальне замовлення: 750 шт
В кошику  од. на суму  грн.
TLD8S33AH TLD8S10AH SERIES_E2310.pdf
TLD8S33AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2380 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+239.46 грн
10+150.50 грн
100+105.07 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
RS1JAL RS1DAL SERIES_C2304.pdf
RS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику  од. на суму  грн.
RS1JAL RS1DAL SERIES_C2304.pdf
RS1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
RS1JL MHG RS1AL%20SERIES_N2103.pdf
RS1JL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
SK315B M4G SK32B%20SERIES_O2102.pdf
SK315B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SK315BHM4G SK32B%20SERIES_O2102.pdf
SK315BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
SK315AHR3G SK32AH%20SERIES_B2304.pdf
SK315AHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
SK315BHR5G SK32BH%20SERIES_B2212.pdf
SK315BHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
SK315AHM2G SK32A%20SERIES_V2102.pdf
SK315AHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
SK55B R5G SK52B%20SERIES_P2102.pdf
SK55B R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55B M4G SK52B%20SERIES_P2102.pdf
SK55B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55BHR5G SK52B%20SERIES_P2102.pdf
SK55BHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
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SK55BHM4G SK52B%20SERIES_P2102.pdf
SK55BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55C R7 SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55C R6 SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55BH SK52BH SERIES_B2309.pdf
SK55BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK55C SK52C SERIES_S2311.pdf
SK55C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55CH SK52CH SERIES_C2311.pdf
SK55CH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55C R6G SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
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SK55C M6 SK52C%20SERIES_R2212.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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SK55B SK52B SERIES_Q2309.pdf
SK55B
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AA
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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PGSMAJ30AHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ30AHF4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
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TSM60NC1R5CP ROG TSM60NC1R5CP_C2209.pdf
TSM60NC1R5CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+33.36 грн
5000+30.60 грн
Мінімальне замовлення: 2500 шт
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TSM60NC1R5CP ROG TSM60NC1R5CP_C2209.pdf
TSM60NC1R5CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 10355 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+80.09 грн
10+63.60 грн
100+49.43 грн
500+39.32 грн
1000+32.03 грн
Мінімальне замовлення: 4 шт
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TSM500N15CS RLG TSM500N15CS_A2112.pdf
TSM500N15CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: 150V, 11A, SINGLE N-CHANNEL POWE
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 12.7W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+31.00 грн
Мінімальне замовлення: 2500 шт
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TSM500N15CS RLG TSM500N15CS_A2112.pdf
TSM500N15CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: 150V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 12.7W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 5450 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.29 грн
10+69.10 грн
100+37.96 грн
500+34.18 грн
1000+31.22 грн
Мінімальне замовлення: 4 шт
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P4KE18CA B0G P4KE%20SERIES_N2104.pdf
P4KE18CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 16.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
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P4KE18CA A0G P4KE%20SERIES_N2104.pdf
P4KE18CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO204AL
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RS3MH RS3AH SERIES_B2304.pdf
RS3MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+11.91 грн
Мінімальне замовлення: 3000 шт
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RS3M R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3M R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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KBL603G kbl601g.pdf
KBL603G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 6A 200V KBL
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RTBS60M pdf.php?pn=RTBS60M
RTBS60M
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 6A, 1000V, FAST RECOVERY
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: TBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+28.12 грн
Мінімальне замовлення: 1800 шт
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RTBS60M pdf.php?pn=RTBS60M
RTBS60M
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 6A, 1000V, FAST RECOVERY
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: TBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 2171 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+65.81 грн
10+55.05 грн
100+38.09 грн
500+29.86 грн
Мінімальне замовлення: 5 шт
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TBS610 M1G TBS606%20SERIES_B2103.pdf
TBS610 M1G
Виробник: Taiwan Semiconductor Corporation
Description: 6A 1000V STANDARD BRIDGE RECTIFI
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
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