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BZV55C10 L0G BZV55C10 L0G Taiwan Semiconductor Corporation Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZV55C10 L1G BZV55C10 L1G Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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SK34A R3G SK34A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+22.42 грн
Мінімальне замовлення: 1800
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SK34A R3G SK34A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 3612 шт:
термін постачання 21-31 дні (днів)
7+52.68 грн
10+44.49 грн
100+34.14 грн
500+25.32 грн
1000+20.26 грн
2000+18.36 грн
Мінімальне замовлення: 7
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BZX55C24 A0G BZX55C24 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_D1610.pdf Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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MBR40100PT MBR40100PT Taiwan Semiconductor Corporation MBR4035PT SERIES_I2103.pdf Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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1N4746G R0G 1N4746G R0G Taiwan Semiconductor Corporation 1N4728G SERIES_G2301.pdf Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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TS79L05CY Taiwan Semiconductor Corporation Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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1V5KE12CA 1V5KE12CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 10.2VWM 16.7V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TSM4953DCS TSM4953DCS Taiwan Semiconductor Corporation TSM4953D_D15.pdf Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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HER104G HER104G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER104GH HER104GH Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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MBR6060PTH MBR6060PTH Taiwan Semiconductor Corporation MBR6035PT SERIES_H2103.pdf Description: DIODE ARR SCHOTT 60V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Qualification: AEC-Q101
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ZM4744A L0G ZM4744A L0G Taiwan Semiconductor Corporation ZM4728A SERIES_E2301.pdf Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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ZM4744A ZM4744A Taiwan Semiconductor Corporation ZM4728A%20SERIES_E2301.pdf Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N4742G R0G 1N4742G R0G Taiwan Semiconductor Corporation 1N4740A SERIES_N1706.pdf Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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1N5252B A0G 1N5252B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252B A0G 1N5252B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5229B A0G 1N5229B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5229B A0G 1N5229B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N4756G A0G 1N4756G A0G Taiwan Semiconductor Corporation 1N4728G SERIES_G2301.pdf Description: DIODE ZENER 47V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
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TSCR421CX6 Taiwan Semiconductor Corporation Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR420CX6 Taiwan Semiconductor Corporation Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR402CX6 Taiwan Semiconductor Corporation TSCR400_402CX6_B1708.pdf Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR400CX6 Taiwan Semiconductor Corporation TSCR400_402CX6_B1708.pdf Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR421CX6H Taiwan Semiconductor Corporation Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR420CX6H Taiwan Semiconductor Corporation Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR402CX6H Taiwan Semiconductor Corporation TSCR400_402CX6H_A1905.pdf Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR400CX6H Taiwan Semiconductor Corporation TSCR400_402CX6H_A1905.pdf Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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SBS36 SBS36 Taiwan Semiconductor Corporation SBS34%20SERIES_F2103.pdf Description: BRIDGE RECT 1PHASE 60V 3A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SBS36H SBS36H Taiwan Semiconductor Corporation SBS34%20SERIES_F2103.pdf Description: BRIDGE RECT 1PHASE 60V 3A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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BZX55C2V4 A0G BZX55C2V4 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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SMAJ28C SMAJ28C Taiwan Semiconductor Corporation SMAJ SERIES_U2102.pdf Description: 400W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ28CH SMAJ28CH Taiwan Semiconductor Corporation SMAJH%20SERIES_A2102.pdf Description: TVS DIODE 28VWM 50VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZV55B8V2 L0G BZV55B8V2 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
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HS1AL HS1AL Taiwan Semiconductor Corporation pdf.php?pn=HS1AL Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+6.88 грн
Мінімальне замовлення: 10000
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HS1AL HS1AL Taiwan Semiconductor Corporation pdf.php?pn=HS1AL Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10+36.27 грн
14+24.53 грн
100+12.41 грн
500+10.31 грн
1000+8.03 грн
2000+7.18 грн
5000+6.91 грн
Мінімальне замовлення: 10
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S1ALHRVG S1ALHRVG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1ALH S1ALH Taiwan Semiconductor Corporation S1ALH%20SERIES_B2108.pdf Description: 1A, 50V, STANDARD RECOVERY RECTI
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS1AL RS1AL Taiwan Semiconductor Corporation RS1AL SERIES_N2103.pdf Description: DIODE STANDARD 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+5.62 грн
20000+4.96 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
RS1ALH RS1ALH Taiwan Semiconductor Corporation pdf.php?pn=RS1ALH Description: 150NS, 0.8A, 50V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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RS1ALHRUG RS1ALHRUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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HS1ALH HS1ALH Taiwan Semiconductor Corporation HS1ALH%20SERIES_A2103.pdf Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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ES1AL ES1AL Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: 35NS, 1A, 50V, SUPER FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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ES1ALH ES1ALH Taiwan Semiconductor Corporation ES1ALH SERIES_A2103.pdf Description: 35NS, 1A, 50V, SUPER FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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RS1AL RHG RS1AL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1AL RHG S1AL RHG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1ALHRHG S1ALHRHG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS1ALHMHG RS1ALHMHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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P4KE250CAH P4KE250CAH Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 214VWM 344VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZT52C11S BZT52C11S Taiwan Semiconductor Corporation BZT52C2V4S%20SERIES_K2411.pdf Description: DIODE ZENER 11V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52C11 BZT52C11 Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 11V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52C11-G BZT52C11-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: DIODE ZENER 11V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C11K BZT52C11K Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_G2402.pdf Description: DIODE ZENER 11V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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SMDJ28CAH SMDJ28CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CAH SMDJ28CAH Taiwan Semiconductor Corporation SMDJH SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2886 шт:
термін постачання 21-31 дні (днів)
5+83.77 грн
10+64.95 грн
100+48.70 грн
500+37.08 грн
1000+33.23 грн
Мінімальне замовлення: 5
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SMDJ28CA M6G SMDJ28CA M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHM6G SMDJ28CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CA R7G SMDJ28CA R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_I2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHR7G SMDJ28CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZV55C10 L0G
BZV55C10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZV55C10 L1G BZV55C2V4%20SERIES_H2301.pdf
BZV55C10 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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SK34A R3G SK32A%20SERIES_V2102.pdf
SK34A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+22.42 грн
Мінімальне замовлення: 1800
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SK34A R3G SK32A%20SERIES_V2102.pdf
SK34A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 3612 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.68 грн
10+44.49 грн
100+34.14 грн
500+25.32 грн
1000+20.26 грн
2000+18.36 грн
Мінімальне замовлення: 7
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BZX55C24 A0G BZX55C2V0%20SERIES_D1610.pdf
BZX55C24 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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MBR40100PT MBR4035PT SERIES_I2103.pdf
MBR40100PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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1N4746G R0G 1N4728G SERIES_G2301.pdf
1N4746G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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TS79L05CY
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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1V5KE12CA 1V5KE SERIES_D2112.pdf
1V5KE12CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TSM4953DCS TSM4953D_D15.pdf
TSM4953DCS
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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HER104G HER101G SERIES_L2104.pdf
HER104G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER104GH HER101G SERIES_L2104.pdf
HER104GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
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MBR6060PTH MBR6035PT SERIES_H2103.pdf
MBR6060PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Qualification: AEC-Q101
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ZM4744A L0G ZM4728A SERIES_E2301.pdf
ZM4744A L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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ZM4744A ZM4728A%20SERIES_E2301.pdf
ZM4744A
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1W MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: MELF
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N4742G R0G 1N4740A SERIES_N1706.pdf
1N4742G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
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1N5252B A0G 1N5221B SERIES_H2301.pdf
1N5252B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5252B A0G 1N5221B SERIES_H2301.pdf
1N5252B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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1N5229B A0G 1N5221B SERIES_H2301.pdf
1N5229B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5229B A0G 1N5221B SERIES_H2301.pdf
1N5229B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N4756G A0G 1N4728G SERIES_G2301.pdf
1N4756G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
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TSCR421CX6
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR420CX6
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR402CX6 TSCR400_402CX6_B1708.pdf
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR400CX6 TSCR400_402CX6_B1708.pdf
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR421CX6H
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR420CX6H
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR402CX6H TSCR400_402CX6H_A1905.pdf
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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TSCR400CX6H TSCR400_402CX6H_A1905.pdf
Виробник: Taiwan Semiconductor Corporation
Description: LINEAR CONSTANT CURRENT REGULATE
Packaging: Tape & Reel (TR)
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SBS36 SBS34%20SERIES_F2103.pdf
SBS36
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 60V 3A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SBS36H SBS34%20SERIES_F2103.pdf
SBS36H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 60V 3A ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 60 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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BZX55C2V4 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C2V4 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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SMAJ28C SMAJ SERIES_U2102.pdf
SMAJ28C
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ28CH SMAJH%20SERIES_A2102.pdf
SMAJ28CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 50VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZV55B8V2 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B8V2 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
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HS1AL pdf.php?pn=HS1AL
HS1AL
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.88 грн
Мінімальне замовлення: 10000
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HS1AL pdf.php?pn=HS1AL
HS1AL
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.27 грн
14+24.53 грн
100+12.41 грн
500+10.31 грн
1000+8.03 грн
2000+7.18 грн
5000+6.91 грн
Мінімальне замовлення: 10
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S1ALHRVG S1AL%20SERIES_Q2108.pdf
S1ALHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1ALH S1ALH%20SERIES_B2108.pdf
S1ALH
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 50V, STANDARD RECOVERY RECTI
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS1AL RS1AL SERIES_N2103.pdf
RS1AL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+5.62 грн
20000+4.96 грн
Мінімальне замовлення: 10000
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RS1ALH pdf.php?pn=RS1ALH
RS1ALH
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 0.8A, 50V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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RS1ALHRUG RS1AL%20SERIES_N2103.pdf
RS1ALHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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HS1ALH HS1ALH%20SERIES_A2103.pdf
HS1ALH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 50V, HIGH EFFICIENT RE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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ES1AL ES1AL SERIES_L2103.pdf
ES1AL
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 50V, SUPER FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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ES1ALH ES1ALH SERIES_A2103.pdf
ES1ALH
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 1A, 50V, SUPER FAST RECOVE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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RS1AL RHG RS1AL%20SERIES_N2103.pdf
RS1AL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1AL RHG S1AL%20SERIES_Q2108.pdf
S1AL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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S1ALHRHG S1AL%20SERIES_Q2108.pdf
S1ALHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS1ALHMHG RS1AL%20SERIES_N2103.pdf
RS1ALHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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P4KE250CAH P4KE%20SERIES_N2104.pdf
P4KE250CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 214VWM 344VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1.2A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZT52C11S BZT52C2V4S%20SERIES_K2411.pdf
BZT52C11S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52C11 BZT52C2V4%20SERIES_G1804.pdf
BZT52C11
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52C11-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C11-G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 350MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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BZT52C11K BZT52C2V7K%20SERIES_G2402.pdf
BZT52C11K
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 200MW SOD523F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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SMDJ28CAH SMDJH SERIES_B2104.pdf
SMDJ28CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CAH SMDJH SERIES_B2104.pdf
SMDJ28CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2886 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.77 грн
10+64.95 грн
100+48.70 грн
500+37.08 грн
1000+33.23 грн
Мінімальне замовлення: 5
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SMDJ28CA M6G SMDJ%20SERIES_I2104.pdf
SMDJ28CA M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ28CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMDJ28CA R7G SMDJ%20SERIES_I2104.pdf
SMDJ28CA R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMDJ28CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ28CAHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 66.1A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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