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TQM070NH04LCR RLG TAIWAN SEMICONDUCTOR TQM070NH04LCR_D2309.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM033NB04LCR RLG TAIWAN SEMICONDUCTOR TSM033NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM070NB04LCR RLG TAIWAN SEMICONDUCTOR TSM070NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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TSM150NB04LCR RLG TAIWAN SEMICONDUCTOR TSM150NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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SMBJ58A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMCJ20CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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TSD30H100CW MNG TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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TSM10NC65CF C0G TSM10NC65CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
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TSM126CX RFG TSM126CX RFG TAIWAN SEMICONDUCTOR TSM126_VerA14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
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TSM190N08CZ C0G TAIWAN SEMICONDUCTOR TSM190N08_B15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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TSM100N06CZ C0G TSM100N06CZ C0G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAD9619922155E0C7&compId=TSM100N06.pdf?ci_sign=6ec68f0dff1607077a48863009234b1d4e2325a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CF C0G TSM60NB380CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CH C5G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NB380CH Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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SMBJ36CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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HERA805GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SMBJ33CAH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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RMB4S TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 584 шт:
термін постачання 21-30 дні (днів)
36+11.97 грн
50+8.02 грн
100+4.78 грн
250+3.83 грн
440+2.12 грн
Мінімальне замовлення: 36
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)
99+4.33 грн
137+2.91 грн
423+2.21 грн
Мінімальне замовлення: 99
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1N4749A TAIWAN SEMICONDUCTOR 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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SMBJ6V5A TAIWAN SEMICONDUCTOR SMBJ SERIES_R2104.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+9.83 грн
Мінімальне замовлення: 3000
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TSM2N7002AKCU RFG TAIWAN SEMICONDUCTOR TSM2N7002AKCU_A2111.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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TSM2N7002AKDCU6 RFG TAIWAN SEMICONDUCTOR TSM2N7002AKDCU6_A2111.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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SF2004PTH TAIWAN SEMICONDUCTOR SF2001PT SERIES_I2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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SF2005GH TAIWAN SEMICONDUCTOR SF2001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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BYG23M TAIWAN SEMICONDUCTOR BYG23M_C2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
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BYG23MH TAIWAN SEMICONDUCTOR BYG23MH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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TSCDT06065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT08065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT10065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
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TSCDT12065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT16065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT16065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT20065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDF12065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF10065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDF10065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF16065G1 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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SMCJ30A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ30AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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TLD5S10AH TAIWAN SEMICONDUCTOR TLD5S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD6S10AH TAIWAN SEMICONDUCTOR TLD6S10AH SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD8S10AH TAIWAN SEMICONDUCTOR TLD8S10AH SERIES_E2310.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
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P4KE6.8A TAIWAN SEMICONDUCTOR media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE6.8CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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MBRS1045CT TAIWAN SEMICONDUCTOR MBRS1035CT%20SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
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TESD5V0V4UCX6 RFG TESD5V0V4UCX6 RFG TAIWAN SEMICONDUCTOR TESD5V0V4UCX6_B2003.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
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TESD5V0L1UC RJG TAIWAN SEMICONDUCTOR TESD5V0L1UC_E2007.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
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P4KE440A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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BZD27C11PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C12PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C15PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C16PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PW TAIWAN SEMICONDUCTOR BZD27C11PW SERIES_D2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PWH TAIWAN SEMICONDUCTOR BZD27C11PWH SERIES_B2203.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZW04-31B BZW04-31B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
10+42.73 грн
18+23.09 грн
100+9.36 грн
275+8.81 грн
Мінімальне замовлення: 10
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BZW04-128 TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
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1.5SMC15A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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S1G M2G S1G M2G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
46+9.40 грн
50+7.94 грн
Мінімальне замовлення: 46
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S1D M2G S1D M2G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 946 шт:
термін постачання 21-30 дні (днів)
23+18.80 грн
39+10.24 грн
136+2.92 грн
387+2.41 грн
500+2.19 грн
Мінімальне замовлення: 23
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TQM070NH04LCR RLG TQM070NH04LCR_D2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 54A; 46.8W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 7mΩ
Drain current: 54A
Gate-source voltage: ±16V
Power dissipation: 46.8W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 112nC
On-state resistance: 2.5mΩ
Drain current: 24A
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM033NB04LCR RLG TSM033NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Type of transistor: N-MOSFET
Case: PDFN56U
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 3.3mΩ
Drain current: 21A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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TSM070NB04LCR RLG TSM070NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15A; 28W; PDFN56U
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 7mΩ
Drain current: 15A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 40V
Case: PDFN56U
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TSM150NB04LCR RLG TSM150NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; 19W; PDFN56
Type of transistor: N-MOSFET
Case: PDFN56
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 15mΩ
Drain current: 10A
Gate-source voltage: ±20V
Power dissipation: 19W
Drain-source voltage: 40V
Kind of package: tape
Kind of channel: enhancement
Mounting: SMD
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SMBJ58A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMCJ20CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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TSD30H100CW MNG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30A
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
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TSM10NC65CF C0G
TSM10NC65CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 0.9Ω
Drain current: 6.3A
Gate-source voltage: ±30V
Power dissipation: 45W
Drain-source voltage: 650V
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TSM126CX RFG TSM126_VerA14.pdf
TSM126CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of package: tape
Kind of channel: enhancement
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TSM190N08CZ C0G TSM190N08_B15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 14A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
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TSM100N06CZ C0G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAD9619922155E0C7&compId=TSM100N06.pdf?ci_sign=6ec68f0dff1607077a48863009234b1d4e2325a9
TSM100N06CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CF C0G
TSM60NB380CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 0.38Ω
Power dissipation: 62.5W
Drain current: 7A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: TO220FP
Kind of package: tube
Kind of channel: enhancement
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TSM60NB380CH C5G pdf.php?pn=TSM60NB380CH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; IPAK
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 19.4nC
On-state resistance: 0.38Ω
Power dissipation: 83W
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 600V
Case: IPAK
Kind of package: tube
Kind of channel: enhancement
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SMBJ36CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
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HERA805GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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SMBJ33CAH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A4DE6486B80D6&compId=SMBJH.pdf?ci_sign=6181d1e778267510f30bc902d98d041042f3f2a3
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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RMB4S pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85BC31995A60D6&compId=RMB2S_ser.pdf?ci_sign=01ba02c3ea6cdad1633d21ff914fcbf48690bdc3
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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BZX55C2V7 R0G
BZX55C2V7 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 584 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.97 грн
50+8.02 грн
100+4.78 грн
250+3.83 грн
440+2.12 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX55C2V7 R0 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2CBBBA164AE80C4&compId=BZX55C10-R0.pdf?ci_sign=045e18723e6acc46155f4564cf3b2b5029e24ad3
BZX55C2V7 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; tape; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 530 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
99+4.33 грн
137+2.91 грн
423+2.21 грн
Мінімальне замовлення: 99
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1N4749A 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4740A SERIES_O2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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SMBJ6V5A SMBJ SERIES_R2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.22V; 53.6A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22V
Max. forward impulse current: 53.6A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.5mA
Application: general purpose
Operating temperature: -55...150°C
Number of channels: 1
Manufacturer series: SMBJ
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+9.83 грн
Мінімальне замовлення: 3000
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TSM2N7002AKCU RFG TSM2N7002AKCU_A2111.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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TSM2N7002AKDCU6 RFG TSM2N7002AKDCU6_A2111.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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SF2004PTH SF2001PT SERIES_I2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; TO3P; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO3P
Max. load current: 20A
Application: automotive industry
Features of semiconductor devices: superfast switching
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SF2005GH SF2001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 20A
Reverse recovery time: 35ns
Application: automotive industry
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BYG23M BYG23M_C2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
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BYG23MH BYG23MH_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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TSCDT06065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT08065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT10065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A
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TSCDT12065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT16065G1 pdf.php?pn=TSCDT16065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDT20065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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TSCDF12065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF10065G1 pdf.php?pn=TSCDF10065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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TSCDF16065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; ITO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
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SMCJ30A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ30AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3.6kW; 11.1÷12.3V; 212A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD5S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 212A
Peak pulse power dissipation: 3.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD6S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 271A
Peak pulse power dissipation: 4.6kW
Application: automotive industry
Kind of package: reel; tape
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TLD8S10AH TLD8S10AH SERIES_E2310.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Semiconductor structure: unidirectional
Case: DO218AB
Manufacturer series: TLD8S
Type of diode: TVS
Leakage current: 15µA
Tolerance: ±5%
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 388A
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Kind of package: reel; tape
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P4KE6.8A media?resourcetype=datasheets&itemid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383&filename=littelfuse_tvs_diode_p4ke_datasheet.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE6.8CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.46V; 40A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.46V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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MBRS1045CT MBRS1035CT%20SERIES_M2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
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TESD5V0V4UCX6 RFG TESD5V0V4UCX6_B2003.pdf
TESD5V0V4UCX6 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 75W; SOT26; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 5A
Peak pulse power dissipation: 75W
Mounting: SMD
Case: SOT26
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Application: Ethernet; USB
Version: ESD
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TESD5V0L1UC RJG TESD5V0L1UC_E2007.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.1kW
Mounting: SMD
Case: DFN1006-2
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 0.1µA
Semiconductor structure: bidirectional
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P4KE440A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf p4ke68.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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BZD27C11PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C12PW BZD27C11PW SERIES_D2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C15PW BZD27C11PW SERIES_D2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C16PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PW BZD27C11PW SERIES_D2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZD27C18PWH BZD27C11PWH SERIES_B2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; 50mA; SMD; reel,tape; SOD123W; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123W
Semiconductor structure: single diode
Zener current: 50mA
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BZW04-31B bzw045v8.pdf
BZW04-31B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 34.2V; 8A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 8A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.73 грн
18+23.09 грн
100+9.36 грн
275+8.81 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZW04-128 bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 128V
Breakdown voltage: 143V
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
Max. forward impulse current: 2A
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1.5SMC15A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.3V; 74A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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S1G M2G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439
S1G M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.40 грн
50+7.94 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
S1D M2G pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B2C8FAC8366C80C4&compId=S1D-M2G.pdf?ci_sign=7e4d8856f25d2abfde49b196612b46f200dde439
S1D M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.5us; SMA; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Features of semiconductor devices: glass passivated
Capacitance: 12pF
Reverse recovery time: 1.5µs
на замовлення 946 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.80 грн
39+10.24 грн
136+2.92 грн
387+2.41 грн
500+2.19 грн
Мінімальне замовлення: 23
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