Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (65965) > Сторінка 1099 з 1100
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1N5402G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD |
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US1J F3 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Reverse recovery time: 75ns Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Capacitance: 10pF Load current: 1A Kind of package: reel; tape |
на замовлення 407 шт: термін постачання 21-30 дні (днів) |
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| US1JH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Reverse recovery time: 75ns Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Application: automotive industry Features of semiconductor devices: superfast switching Semiconductor structure: single diode Capacitance: 10pF Load current: 1A Kind of package: reel; tape |
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| ES2FAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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| ES2FH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
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BZW06-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Max. forward impulse current: 28A |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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| SMCJ5.0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 171A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1mA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMCJ5.0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 2mA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
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| SMCJ5.0CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 171A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 2mA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
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| SF14G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 35ns |
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| SF14G-K | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 Reverse recovery time: 35ns |
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TS90115CY RMG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 5V Output current: 0.25A Case: SOT89 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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TS9011SCY RMG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.65V Output voltage: 3.3V Output current: 0.2A Case: SOT89 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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TS9011SCX RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.65V Output voltage: 3.3V Output current: 0.2A Case: SOT23 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 481 шт: термін постачання 21-30 дні (днів) |
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TS90115CX RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 5V Output current: 0.25A Case: SOT23 Mounting: SMD Manufacturer series: TS9011 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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TSM10N80CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
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| TSM10N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.7A Power dissipation: 290W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC |
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BZX84C12 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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| TSD10H120CW MNG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 120V; 10A Semiconductor structure: common cathode; double Mounting: SMD Max. forward voltage: 0.79V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 120V Case: D2PAK Type of diode: Schottky rectifying |
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| TSUP10H120H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 120V; 10A; reel,tape Semiconductor structure: single diode Mounting: SMD Max. forward voltage: 0.76V Load current: 10A Max. off-state voltage: 120V Kind of package: reel; tape Application: automotive industry Case: TO277A Type of diode: Schottky rectifying |
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| TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
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| TSM70N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 12.6nC Kind of package: tape Kind of channel: enhancement |
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SD103BW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.35A Semiconductor structure: single diode Capacitance: 50pF Max. forward voltage: 0.6V Max. forward impulse current: 1.5A Kind of package: reel; tape |
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| 1N4148WSH RRG | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Max. load current: 0.3A |
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| ES2D | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SOD128 Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.95V Application: automotive industry Features of semiconductor devices: superfast switching Kind of package: reel; tape |
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| ES2DVH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 900mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.9V Application: automotive industry Features of semiconductor devices: ultrafast switching Kind of package: reel; tape |
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1N4007G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1V Capacitance: 10pF Features of semiconductor devices: glass passivated |
на замовлення 949 шт: термін постачання 21-30 дні (днів) |
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TS1935BCX5 RFG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25 Topology: boost Kind of integrated circuit: DC/DC converter Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape Case: SOT25 Operating temperature: -40...85°C Duty cycle factor: 0...87% Number of channels: 1 Output current: 1.9A Input voltage: 2.6...5.5V DC Output voltage: 3...27V DC Frequency: 1.2MHz |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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| TUAU10MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 10A; 80ns; TO277A; Ufmax: 1.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 10A Reverse recovery time: 80ns Semiconductor structure: single diode Case: TO277A Max. forward voltage: 1.9V Kind of package: reel; tape Application: automotive industry |
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| SMF58A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 2.1A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
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TSM10NC60CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33nC |
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TSM10NC65CF C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC |
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SS110 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
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SS110LW | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape |
на замовлення 20023 шт: термін постачання 21-30 дні (днів) |
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| SS110L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 30A Kind of package: reel; tape |
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| SS110LH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; automotive industry Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Max. forward voltage: 0.8V Max. load current: 1A Application: automotive industry Leakage current: 50µA |
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| SS110H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Application: automotive industry |
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| SS110LWH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123W Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Application: automotive industry |
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| SS110LSH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123HE; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.8V Kind of package: reel; tape Application: automotive industry |
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TSM900N06CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 4.17W Case: SOT223 On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of channel: enhancement Kind of package: tape Gate-source voltage: ±20V |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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| TSM900N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 25W Case: IPAK SL On-state resistance: 90mΩ Mounting: THT Gate charge: 9.3nC Kind of channel: enhancement Kind of package: tube Gate-source voltage: ±20V |
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| TSM900N10CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.5A Power dissipation: 50W Case: IPAK SL On-state resistance: 90mΩ Mounting: THT Gate charge: 9.3nC Kind of channel: enhancement Kind of package: tube Gate-source voltage: ±20V |
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| TSM900N10CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 50W Case: DPAK; TO252 On-state resistance: 72mΩ Mounting: SMD Gate charge: 9.3nC Kind of channel: enhancement |
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| US1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape Features of semiconductor devices: superfast switching Capacitance: 10pF Max. forward impulse current: 30A |
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| US1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: superfast switching Capacitance: 10pF Max. forward impulse current: 30A |
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В кошику од. на суму грн. | |||||||||||||||||
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TS19378CS RLG | TAIWAN SEMICONDUCTOR |
Category: LED driversDescription: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 8÷40VDC Case: SOP8 Mounting: SMD Operating temperature: -40...125°C Output current: 2A Number of channels: 1 Operating voltage: 8...40V DC Kind of integrated circuit: LED driver Topology: buck Type of integrated circuit: driver |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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TS19452CS RLG | TAIWAN SEMICONDUCTOR |
Category: LED driversDescription: IC: driver; buck; LED driver; SOP8; 120mA; Ch: 1; PWM,linear dimming Case: SOP8 Mounting: SMD Operating temperature: -40...85°C Output current: 0.12A Number of channels: 1 Operating voltage: 20...475V DC Kind of integrated circuit: LED driver Topology: buck Type of integrated circuit: driver Integrated circuit features: linear dimming; PWM |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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TS393CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA Case: SOP8 Mounting: SMT Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 50nA Delay time: 1.3µs Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 Type of integrated circuit: comparator Kind of comparator: low-power |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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TS2951CS50 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1 Case: SOP8 Mounting: SMD Operating temperature: -40...125°C Output current: 0.15A Tolerance: ±0.1% Voltage drop: 0.45V Number of channels: 1 Output voltage: 5V Input voltage: 6...30V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Manufacturer series: TS2951 |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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TS78L03CS RLG | TAIWAN SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 3.3V; 0.1A; SOP8; SMD; TS78L00 Case: SOP8 Mounting: SMD Operating temperature: 0...150°C Output current: 0.1A Tolerance: ±4% Voltage drop: 2V Number of channels: 1 Output voltage: 3.3V Input voltage: 5.8...20V Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Manufacturer series: TS78L00 |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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TS2938CS50 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOP8; SMD; ±2% Case: SOP8 Mounting: SMD Operating temperature: -40...125°C Output current: 0.5A Tolerance: ±2% Voltage drop: 0.6V Number of channels: 1 Output voltage: 5V Input voltage: 6...26V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Manufacturer series: TS2938 |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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TSM4806CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±8V On-state resistance: 20mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: tape Kind of channel: enhancement |
на замовлення 161 шт: термін постачання 21-30 дні (днів) |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Power dissipation: 7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 24nC Kind of package: tape Kind of channel: enhancement |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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| 1N5402G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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| US1J F3 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Capacitance: 10pF
Load current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Capacitance: 10pF
Load current: 1A
Kind of package: reel; tape
на замовлення 407 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.48 грн |
| 17+ | 25.44 грн |
| 25+ | 20.48 грн |
| 100+ | 18.33 грн |
| US1JH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Application: automotive industry
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Load current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Reverse recovery time: 75ns
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Application: automotive industry
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Load current: 1A
Kind of package: reel; tape
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| ES2FAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES2FH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| BZW06-13B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.65 грн |
| 17+ | 25.44 грн |
| 100+ | 16.19 грн |
| SMCJ5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ5.0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ5.0CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| SF14G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
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| SF14G-K |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
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| TS90115CY RMG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.48 грн |
| 11+ | 38.65 грн |
| 25+ | 32.37 грн |
| 100+ | 24.45 грн |
| TS9011SCY RMG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.25 грн |
| 16+ | 26.35 грн |
| 25+ | 21.47 грн |
| 100+ | 16.02 грн |
| 250+ | 13.46 грн |
| TS9011SCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 481 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.15 грн |
| 11+ | 39.64 грн |
| 25+ | 31.05 грн |
| 50+ | 25.77 грн |
| 100+ | 21.64 грн |
| 250+ | 17.84 грн |
| TS90115CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.15 грн |
| 11+ | 38.82 грн |
| 25+ | 27.17 грн |
| TSM10N80CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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| TSM10N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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| BZX84C12 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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| TSD10H120CW MNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 10A
Semiconductor structure: common cathode; double
Mounting: SMD
Max. forward voltage: 0.79V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 120V
Case: D2PAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 10A
Semiconductor structure: common cathode; double
Mounting: SMD
Max. forward voltage: 0.79V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 120V
Case: D2PAK
Type of diode: Schottky rectifying
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| TSUP10H120H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 120V; 10A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.76V
Load current: 10A
Max. off-state voltage: 120V
Kind of package: reel; tape
Application: automotive industry
Case: TO277A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 120V; 10A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.76V
Load current: 10A
Max. off-state voltage: 120V
Kind of package: reel; tape
Application: automotive industry
Case: TO277A
Type of diode: Schottky rectifying
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| TSM70N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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| SD103BW RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
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| 1N4148WSH RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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| ES2D |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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| ES2DVH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
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| 1N4007G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 949 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.46 грн |
| 29+ | 14.54 грн |
| 36+ | 11.56 грн |
| 100+ | 4.50 грн |
| 500+ | 3.06 грн |
| TS1935BCX5 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Topology: boost
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT25
Operating temperature: -40...85°C
Duty cycle factor: 0...87%
Number of channels: 1
Output current: 1.9A
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Frequency: 1.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Topology: boost
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT25
Operating temperature: -40...85°C
Duty cycle factor: 0...87%
Number of channels: 1
Output current: 1.9A
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Frequency: 1.2MHz
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.50 грн |
| 25+ | 81.76 грн |
| TUAU10MH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; 80ns; TO277A; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.9V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; 80ns; TO277A; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.9V
Kind of package: reel; tape
Application: automotive industry
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| SMF58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| TSM10NC60CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
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| TSM10NC65CF C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
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| SS110 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.68 грн |
| 34+ | 12.22 грн |
| 100+ | 7.51 грн |
| 500+ | 5.33 грн |
| SS110LW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
на замовлення 20023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 31+ | 13.71 грн |
| 100+ | 8.92 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.53 грн |
| 2000+ | 4.79 грн |
| 2500+ | 4.46 грн |
| 5000+ | 4.21 грн |
| SS110L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| SS110LH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
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| SS110H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Application: automotive industry
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| SS110LWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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| SS110LSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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| TSM900N06CW RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 4.17W
Case: SOT223
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tape
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 4.17W
Case: SOT223
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tape
Gate-source voltage: ±20V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.13 грн |
| 17+ | 25.19 грн |
| 100+ | 22.79 грн |
| TSM900N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 25W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 25W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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| TSM900N10CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 50W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 50W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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| TSM900N10CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
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| US1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
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| US1GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
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| TS19378CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 8÷40VDC
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
Number of channels: 1
Operating voltage: 8...40V DC
Kind of integrated circuit: LED driver
Topology: buck
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 2A; Ch: 1; 8÷40VDC
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
Number of channels: 1
Operating voltage: 8...40V DC
Kind of integrated circuit: LED driver
Topology: buck
Type of integrated circuit: driver
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.92 грн |
| 9+ | 46.25 грн |
| TS19452CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 120mA; Ch: 1; PWM,linear dimming
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.12A
Number of channels: 1
Operating voltage: 20...475V DC
Kind of integrated circuit: LED driver
Topology: buck
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; buck; LED driver; SOP8; 120mA; Ch: 1; PWM,linear dimming
Case: SOP8
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.12A
Number of channels: 1
Operating voltage: 20...475V DC
Kind of integrated circuit: LED driver
Topology: buck
Type of integrated circuit: driver
Integrated circuit features: linear dimming; PWM
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 68.55 грн |
| TS393CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 50nA
Delay time: 1.3µs
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: low-power
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 50nA
Delay time: 1.3µs
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: low-power
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.28 грн |
| 28+ | 14.87 грн |
| TS2951CS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Tolerance: ±0.1%
Voltage drop: 0.45V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...30V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2951
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Tolerance: ±0.1%
Voltage drop: 0.45V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...30V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2951
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 108.51 грн |
| 10+ | 43.44 грн |
| TS78L03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.1A; SOP8; SMD; TS78L00
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Output current: 0.1A
Tolerance: ±4%
Voltage drop: 2V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 5.8...20V
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS78L00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.1A; SOP8; SMD; TS78L00
Case: SOP8
Mounting: SMD
Operating temperature: 0...150°C
Output current: 0.1A
Tolerance: ±4%
Voltage drop: 2V
Number of channels: 1
Output voltage: 3.3V
Input voltage: 5.8...20V
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS78L00
на замовлення 200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.59 грн |
| 14+ | 30.89 грн |
| 25+ | 21.64 грн |
| 100+ | 19.49 грн |
| TS2938CS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOP8; SMD; ±2%
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2938
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; SOP8; SMD; ±2%
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.5A
Tolerance: ±2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...26V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2938
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.27 грн |
| 7+ | 60.29 грн |
| 10+ | 59.46 грн |
| TSM4806CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 161 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.58 грн |
| 17+ | 25.02 грн |
| 100+ | 19.57 грн |
| TSM042N03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.92 грн |
| 10+ | 47.16 грн |
| 25+ | 42.12 грн |

















