Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66399) > Сторінка 1096 з 1107
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZT52C15 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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TS393CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA Case: SOP8 Mounting: SMT Kind of package: reel; tape Operating temperature: 0...70°C Input offset current: 50nA Delay time: 1.3µs Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 Type of integrated circuit: comparator Kind of comparator: low-power |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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TS2951CS50 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1 Case: SOP8 Mounting: SMD Operating temperature: -40...125°C Output current: 0.15A Tolerance: ±0.1% Voltage drop: 0.45V Number of channels: 1 Output voltage: 5V Input voltage: 6...30V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Manufacturer series: TS2951 |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| SMF33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 3.8A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ28AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ5.0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMAJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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TSM2N7002AKCX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.65nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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GBU805 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V Case: GBU |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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| SMAJ24AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
на замовлення 2182 шт: термін постачання 21-30 дні (днів) |
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| TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 19A Power dissipation: 40W Case: IPAK Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: THT Gate charge: 16.6nC Kind of channel: enhancement Kind of package: tube Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM340N06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 60V; 30A; 40W; DPAK,TO252; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 60V Drain current: 30A Power dissipation: 40W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16.6nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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| TSM900N10CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 100V; 15A; 50W; DPAK,TO252; SMT Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 100V Drain current: 15A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: 20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 9.3nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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ES1GL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: subSMA Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Features of semiconductor devices: superfast switching |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V6 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Zener current: 5mA |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
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BZX85C4V7 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 4.7V; 45mA; tape; DO41; single diode; Ir: 3uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.7V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Zener current: 45mA |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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| SR306 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 700mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.7V |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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BYG21M | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Capacitance: 13pF Reverse recovery time: 120ns Max. forward voltage: 1.6V Load current: 1.5A Max. forward impulse current: 50A Max. off-state voltage: 1kV Semiconductor structure: single diode Case: SMA Features of semiconductor devices: glass passivated |
на замовлення 956 шт: термін постачання 21-30 дні (днів) |
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| BYG21MH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBPC2506 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GBPC2506W | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 25A Max. forward impulse current: 0.3kA Version: square Case: GBPCW Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HER1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Max. load current: 10A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU806 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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| MBR2045CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 840mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: thinSMA Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: thinSMA Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD128 Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD128 Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Application: automotive industry Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1GLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Reverse recovery time: 35ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.4kV Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX85C16 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 16V; 15mA; tape; DO41; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 16V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 15mA Leakage current: 0.5µA |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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BZX55C6V8 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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BZX55C6V8 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: THT Tolerance: ±5% Kind of package: tape Case: DO35 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 922 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V8 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Zener current: 5mA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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TSM650P03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.6A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 8nC |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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TS2937CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 5V Output current: 0.5A Case: D2PAK Mounting: SMD Manufacturer series: TS2937 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 6...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SK26A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA |
на замовлення 340 шт: термін постачання 21-30 дні (днів) |
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BZX85C18 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 18V; 15mA; tape; DO41; single diode; Ir: 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 18V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 15mA |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.9µA |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V6 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.9µA |
на замовлення 690 шт: термін постачання 21-30 дні (днів) |
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SK110B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward voltage: 0.85V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TS358CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SOP8 Slew rate: 0.4V/μs Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 150nA |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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TS19820CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8 Application: SMPS Case: SOP8 Integrated circuit features: integrated voltage regulator; linear dimming; PWM Kind of integrated circuit: LED driver; PFC controller Type of integrated circuit: PMIC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: -0.3...19V Input voltage: 9.5...30.5V DC Frequency: 30...200kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52C10 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.18µA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMF36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 3.4A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| US1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: superfast switching Capacitance: 10pF Max. forward impulse current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P6SMB30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 15A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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RB751V-40 RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky switching Semiconductor structure: single diode Capacitance: 2pF Load current: 30mA Max. forward impulse current: 0.2A Max. forward voltage: 0.37V Max. off-state voltage: 40V Case: SOD323 |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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| SMBJ58CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMBJ58CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRI20100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Max. forward voltage: 0.95V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ15A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 25.1A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 2790 шт: термін постачання 21-30 дні (днів) |
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| SMBJ16CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 24.2A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C20 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 20V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 20V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 1089 шт: термін постачання 21-30 дні (днів) |
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| SMAJ64A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64V Breakdown voltage: 71.1V Max. forward impulse current: 3.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C3V0 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 3V; 5mA; tape; DO35; single diode; Ir: 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 4µA Zener current: 5mA |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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| SMAJ24A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| BZT52C15 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.12 грн |
| 145+ | 2.79 грн |
| 250+ | 2.50 грн |
| TS393CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 50nA
Delay time: 1.3µs
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: low-power
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Case: SOP8
Mounting: SMT
Kind of package: reel; tape
Operating temperature: 0...70°C
Input offset current: 50nA
Delay time: 1.3µs
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Type of integrated circuit: comparator
Kind of comparator: low-power
на замовлення 78 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.44 грн |
| 28+ | 14.35 грн |
| TS2951CS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Tolerance: ±0.1%
Voltage drop: 0.45V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...30V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2951
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.15A
Tolerance: ±0.1%
Voltage drop: 0.45V
Number of channels: 1
Output voltage: 5V
Input voltage: 6...30V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Manufacturer series: TS2951
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.76 грн |
| 10+ | 41.94 грн |
| 25+ | 33.65 грн |
| SMF33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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В кошику
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| SMAJ28AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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В кошику
од. на суму грн.
| SMAJ5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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В кошику
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| SMAJ33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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В кошику
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| SMAJ33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
на замовлення 225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.06 грн |
| 21+ | 19.46 грн |
| 27+ | 14.91 грн |
| 100+ | 9.73 грн |
| TSM2N7002AKCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| GBU805 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Case: GBU
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.20 грн |
| 5+ | 79.74 грн |
| SMAJ24AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
на замовлення 2182 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 26+ | 15.71 грн |
| 50+ | 10.76 грн |
| 100+ | 9.25 грн |
| 250+ | 7.65 грн |
| 500+ | 7.42 грн |
| TSM340N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 19A
Power dissipation: 40W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: THT
Gate charge: 16.6nC
Kind of channel: enhancement
Kind of package: tube
Polarisation: unipolar
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| TSM340N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 30A; 40W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 30A; 40W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 40W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 16.6nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.43 грн |
| TSM900N10CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 15A; 50W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 15A; 50W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 15.37 грн |
| ES1GL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.34 грн |
| 25+ | 16.51 грн |
| 100+ | 9.57 грн |
| BZX84C5V6 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.74 грн |
| 48+ | 8.37 грн |
| 69+ | 5.80 грн |
| 104+ | 3.84 грн |
| BZX85C4V7 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; tape; DO41; single diode; Ir: 3uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 45mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; tape; DO41; single diode; Ir: 3uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 45mA
на замовлення 119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.47 грн |
| 27+ | 15.15 грн |
| 100+ | 8.37 грн |
| SR306 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD; Ufmax: 700mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.7V
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.22 грн |
| 15+ | 27.75 грн |
| BYG21M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 13pF
Reverse recovery time: 120ns
Max. forward voltage: 1.6V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; 120ns; SMA; Ufmax: 1.6V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 13pF
Reverse recovery time: 120ns
Max. forward voltage: 1.6V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
на замовлення 956 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.48 грн |
| 21+ | 19.46 грн |
| 100+ | 11.48 грн |
| 132+ | 7.18 грн |
| 362+ | 6.78 грн |
| BYG21MH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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| GBPC2506 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| GBPC2506W |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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| HER1004GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Max. load current: 10A
Application: automotive industry
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| GBU806 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.19 грн |
| 10+ | 59.80 грн |
| 20+ | 52.63 грн |
| MBR2045CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Kind of package: tube
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| ES1GLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
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| ES1GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
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| ES1GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: thinSMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
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| ES1GFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
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| ES1GFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD128
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
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| ES1GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Application: automotive industry
Features of semiconductor devices: superfast switching
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| ES1GLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Reverse recovery time: 35ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
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| BZX85C16 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; 15mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 15mA
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 16V; 15mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 16V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 15mA
Leakage current: 0.5µA
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 6.87 грн |
| 100+ | 5.34 грн |
| BZX55C6V8 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.64 грн |
| 175+ | 2.45 грн |
| 500+ | 2.15 грн |
| 1000+ | 1.95 грн |
| BZX55C6V8 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 922 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.46 грн |
| 43+ | 9.41 грн |
| 62+ | 6.44 грн |
| 100+ | 4.89 грн |
| 250+ | 3.61 грн |
| 500+ | 3.22 грн |
| BZX84C6V8 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 6.35 грн |
| 115+ | 3.62 грн |
| 500+ | 2.88 грн |
| TSM650P03CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 8nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 8nC
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.06 грн |
| 18+ | 22.17 грн |
| 25+ | 18.98 грн |
| TS2937CM50 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.5A
Case: D2PAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 5V
Output current: 0.5A
Case: D2PAK
Mounting: SMD
Manufacturer series: TS2937
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6...26V
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| SK26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
на замовлення 340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 24+ | 16.82 грн |
| 50+ | 11.72 грн |
| 100+ | 10.03 грн |
| 245+ | 3.84 грн |
| BZX85C18 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 18V; 15mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 15mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 18V; 15mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 15mA
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 35.88 грн |
| BZT52C5V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.9µA
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.59 грн |
| 81+ | 4.94 грн |
| 142+ | 2.81 грн |
| 340+ | 2.76 грн |
| BZT52C5V6 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.9µA
на замовлення 690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.88 грн |
| 49+ | 8.21 грн |
| 100+ | 4.97 грн |
| 360+ | 2.60 грн |
| SK110B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
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| TS358CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SOP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SOP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SOP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.22 грн |
| 26+ | 15.39 грн |
| 100+ | 14.43 грн |
| TS19820CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8
Application: SMPS
Case: SOP8
Integrated circuit features: integrated voltage regulator; linear dimming; PWM
Kind of integrated circuit: LED driver; PFC controller
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: -0.3...19V
Input voltage: 9.5...30.5V DC
Frequency: 30...200kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8
Application: SMPS
Case: SOP8
Integrated circuit features: integrated voltage regulator; linear dimming; PWM
Kind of integrated circuit: LED driver; PFC controller
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: -0.3...19V
Input voltage: 9.5...30.5V DC
Frequency: 30...200kHz
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| BZT52C10 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
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| SMF36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 40V; 3.4A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 3.4A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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| US1GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
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| P6SMB30CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.59 грн |
| 57+ | 7.02 грн |
| 100+ | 6.46 грн |
| 250+ | 6.14 грн |
| RB751V-40 RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Capacitance: 2pF
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Max. off-state voltage: 40V
Case: SOD323
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.03A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Capacitance: 2pF
Load current: 30mA
Max. forward impulse current: 0.2A
Max. forward voltage: 0.37V
Max. off-state voltage: 40V
Case: SOD323
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.17 грн |
| 43+ | 9.41 грн |
| 100+ | 5.84 грн |
| 500+ | 4.31 грн |
| SMBJ58CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ58CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| MBRI20100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.95V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; I2PAK; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Max. forward voltage: 0.95V
Kind of package: tube
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| SMBJ15A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 25.1A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 25.1A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 2790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.06 грн |
| 20+ | 20.33 грн |
| 100+ | 12.92 грн |
| 500+ | 9.49 грн |
| 600+ | 9.17 грн |
| 1000+ | 8.45 грн |
| SMBJ16CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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| BZX55C20 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 20V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1089 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.16 грн |
| 57+ | 7.02 грн |
| 100+ | 4.27 грн |
| 500+ | 2.97 грн |
| 1000+ | 2.55 грн |
| SMAJ64A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.1V; 3.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Max. forward impulse current: 3.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
товару немає в наявності
В кошику
од. на суму грн.
| BZX55C3V0 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
на замовлення 710 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.30 грн |
| 61+ | 6.54 грн |
| 102+ | 3.94 грн |
| 500+ | 2.77 грн |
| SMAJ24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Tolerance: ±5%
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.



























