Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66237) > Сторінка 1096 з 1104
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SF14G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 1.5KE39CAH | TAIWAN SEMICONDUCTOR |
Category: Unclassified Description: 1.5KE39CAH |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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TS3480CX33 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.1V Output voltage: 3.3V Output current: 0.1A Case: SOT23 Mounting: SMD Manufacturer series: TS3480 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...30V |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
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| ES1BL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| P4KE33A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR2060CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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TS34118CS28 RDG | TAIWAN SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system Type of integrated circuit: driver Case: SOP28 Supply voltage: 3...6.5V DC Integrated circuit features: voice switched speakerphone system Mounting: SMD Kind of package: reel; tape |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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BZT52C16 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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BZT52C16S R9G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSS42U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSS43U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: TO220 |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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BZX84C15 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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TS2940CP33 ROG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2% Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 0...26V Tolerance: ±0.2% Voltage drop: 0.6V Output current: 1A Number of channels: 1 Output voltage: 3.3V Case: DPAK |
на замовлення 107 шт: термін постачання 21-30 дні (днів) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Input voltage: 8.3...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 3.3V Case: SOT223 |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube Manufacturer series: TS2940 Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Mounting: THT Type of integrated circuit: voltage regulator Kind of package: tube Input voltage: 10...26V Tolerance: ±2% Voltage drop: 0.8V Output current: 0.8A Number of channels: 1 Output voltage: 5V Case: TO220 |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Case: D2PAK Kind of voltage regulator: fixed; LDO; linear Manufacturer series: TS2940 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output current: 0.8A Voltage drop: 0.8V Number of channels: 1 Tolerance: ±2% Input voltage: 10...26V Output voltage: 5V |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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| TSM70N900CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM70N900CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.7nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM70N600CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: IPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM70N600CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 12.6nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM70N600CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 12.6nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM70N900CI C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.7A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX85C36 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 36V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 8mA Leakage current: 0.5µA |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V9 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 720 шт: термін постачання 21-30 дні (днів) |
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ABS15J | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS Case: ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 0.6kV |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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| TSM170N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 46W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 1435 шт: термін постачання 21-30 дні (днів) |
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BZX55C6V2 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 0.1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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SMBJ6V0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 61A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMBJ6V0A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 61A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MUR860 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Reverse recovery time: 50ns |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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BZX55C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 1300 шт: термін постачання 21-30 дні (днів) |
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BZX85C30 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 30V; 8mA; tape; DO41; single diode; Ir: 0.5uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 30V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Zener current: 8mA Kind of package: tape |
на замовлення 1450 шт: термін постачання 21-30 дні (днів) |
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TSM05N03CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 7nC Kind of package: tape Kind of channel: enhancement |
на замовлення 131 шт: термін постачання 21-30 дні (днів) |
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| TSM051N04LCP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 16A Power dissipation: 18W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44.5nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Application: automotive industry Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52B10S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode Case: SOD323F Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.18µA Zener current: 5mA Power dissipation: 0.2W Tolerance: ±2% Zener voltage: 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSM8N80CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.9A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 41nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMCJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RS3B | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ54A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ54CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ54AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 18A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TPMR10DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| P2500M | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 25A; P2500 Mounting: THT Case: P2500 Type of diode: rectifying Semiconductor structure: single diode Load current: 25A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HDBL107G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP Case: DBL Kind of package: tube Version: DIP Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 50A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
BZW06-13B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06 Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 14.3V Semiconductor structure: bidirectional Tolerance: ±5% Case: DO15 Mounting: THT Peak pulse power dissipation: 0.6kW Manufacturer series: BZW06 Max. forward impulse current: 28A |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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| BZW06-28 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Manufacturer series: BZW06 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
1.5SMC36CA V6G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 29.1V Breakdown voltage: 36V Max. forward impulse current: 30A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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| S8KC | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| S8KCH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 8A Semiconductor structure: single diode Case: SMC Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ150CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167V Max. forward impulse current: 1.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GPA806H | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO220AC Load current: 8A Max. off-state voltage: 0.8kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SFA806GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HERA806GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry Type of diode: rectifying Semiconductor structure: single diode Features of semiconductor devices: superfast switching Mounting: THT Case: TO220AC Load current: 8A Max. off-state voltage: 0.6kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
P6SMB18CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB Max. off-state voltage: 15.3V Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 25A Type of diode: TVS Tolerance: ±5% Leakage current: 1µA Breakdown voltage: 18V Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Manufacturer series: P6SMB |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
| SF14G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE39CAH |
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1250+ | 25.55 грн |
| TS3480CX33 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.1A
Case: SOT23
Mounting: SMD
Manufacturer series: TS3480
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...30V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.55 грн |
| 13+ | 31.27 грн |
| 25+ | 25.47 грн |
| 43+ | 21.98 грн |
| ES1BL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 8.89 грн |
| P4KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
товару немає в наявності
В кошику
од. на суму грн.
| MBR2060CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220AB; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.84 грн |
| 10+ | 44.52 грн |
| 50+ | 41.82 грн |
| 100+ | 39.12 грн |
| TS34118CS28 RDG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Case: SOP28
Supply voltage: 3...6.5V DC
Integrated circuit features: voice switched speakerphone system
Mounting: SMD
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Case: SOP28
Supply voltage: 3...6.5V DC
Integrated circuit features: voice switched speakerphone system
Mounting: SMD
Kind of package: reel; tape
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.16 грн |
| 5+ | 200.78 грн |
| 6+ | 159.49 грн |
| BZT52C16 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C16S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
товару немає в наявності
В кошику
од. на суму грн.
| TSS42U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSS43U RGG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TS2940CZ33 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: TO220
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.84 грн |
| 5+ | 127.77 грн |
| 10+ | 98.41 грн |
| 27+ | 92.85 грн |
| BZX84C15 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 6.84 грн |
| P6SMB150CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.33 грн |
| 16+ | 24.84 грн |
| 25+ | 20.79 грн |
| 78+ | 11.98 грн |
| 214+ | 11.35 грн |
| TS2940CP33 ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 0...26V
Tolerance: ±0.2%
Voltage drop: 0.6V
Output current: 1A
Number of channels: 1
Output voltage: 3.3V
Case: DPAK
на замовлення 107 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.53 грн |
| 10+ | 94.44 грн |
| 18+ | 53.17 грн |
| 48+ | 50.79 грн |
| TS2940CW33 RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Input voltage: 8.3...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 3.3V
Case: SOT223
на замовлення 203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.65 грн |
| 10+ | 69.04 грн |
| 25+ | 58.17 грн |
| 27+ | 34.60 грн |
| 50+ | 34.52 грн |
| 75+ | 32.70 грн |
| TS2940CZ50 C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Manufacturer series: TS2940
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Type of integrated circuit: voltage regulator
Kind of package: tube
Input voltage: 10...26V
Tolerance: ±2%
Voltage drop: 0.8V
Output current: 0.8A
Number of channels: 1
Output voltage: 5V
Case: TO220
на замовлення 193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.09 грн |
| 5+ | 120.63 грн |
| 9+ | 104.76 грн |
| 10+ | 102.38 грн |
| 25+ | 96.82 грн |
| TS2940CM50 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Case: D2PAK
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.8A
Voltage drop: 0.8V
Number of channels: 1
Tolerance: ±2%
Input voltage: 10...26V
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Case: D2PAK
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: TS2940
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output current: 0.8A
Voltage drop: 0.8V
Number of channels: 1
Tolerance: ±2%
Input voltage: 10...26V
Output voltage: 5V
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 202.55 грн |
| 10+ | 122.22 грн |
| 25+ | 103.17 грн |
| TSM70N900CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N900CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 9.7nC
Kind of package: tape
Kind of channel: enhancement
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| TSM70N600CH C5G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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| TSM70N600CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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| TSM70N900CI C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.7A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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| BZX85C36 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 36V; 8mA; tape; DO41; single diode; Ir: 500nA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 36V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 8mA
Leakage current: 0.5µA
на замовлення 245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 7.61 грн |
| 100+ | 5.95 грн |
| 200+ | 4.76 грн |
| BZT52C3V9 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.36 грн |
| 135+ | 2.94 грн |
| 250+ | 2.71 грн |
| ABS15J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Case: ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.30 грн |
| 16+ | 25.47 грн |
| 100+ | 16.43 грн |
| 250+ | 13.73 грн |
| TSM170N06CH X0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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| BZX55C6V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.82 грн |
| 47+ | 8.49 грн |
| 100+ | 5.07 грн |
| 250+ | 4.07 грн |
| 500+ | 3.44 грн |
| 1000+ | 2.89 грн |
| BZX55C6V2 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; tape; DO35; single diode; Ir: 0.1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 118+ | 3.65 грн |
| 163+ | 2.44 грн |
| SMBJ6V0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMBJ6V0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 61A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 61A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMAJ15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| MUR860 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.32 грн |
| 11+ | 39.44 грн |
| 31+ | 31.03 грн |
| BZX55C8V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 115+ | 3.76 грн |
| 140+ | 2.88 грн |
| 410+ | 2.29 грн |
| 1120+ | 2.17 грн |
| BZX85C30 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 30V; 8mA; tape; DO41; single diode; Ir: 0.5uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 30V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Zener current: 8mA
Kind of package: tape
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 52+ | 7.78 грн |
| 100+ | 4.38 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.44 грн |
| TSM05N03CW RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 131 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.41 грн |
| 11+ | 36.19 грн |
| 25+ | 27.38 грн |
| 36+ | 26.19 грн |
| 98+ | 24.76 грн |
| 100+ | 24.13 грн |
| TSM051N04LCP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 16A; 18W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Power dissipation: 18W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44.5nC
Kind of package: tape
Kind of channel: enhancement
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| SMAJ26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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| BZT52B10S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 10V; 5mA; SMD; reel,tape; SOD323F; single diode
Case: SOD323F
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.18µA
Zener current: 5mA
Power dissipation: 0.2W
Tolerance: ±2%
Zener voltage: 10V
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| TSM8N80CZ C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.9A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.9A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 41nC
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| SMCJ36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 40÷44.2V; 27A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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| RS3B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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| SMCJ54A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMCJ54CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SMCJ54AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 18A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Application: automotive industry
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| TPMR10DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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| P2500M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 25A; P2500
Mounting: THT
Case: P2500
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 25A
Max. off-state voltage: 1kV
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| HDBL107G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DIP
Case: DBL
Kind of package: tube
Version: DIP
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Max. off-state voltage: 1kV
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| BZW06-13B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.86 грн |
| 15+ | 27.30 грн |
| 79+ | 11.90 грн |
| 216+ | 11.27 грн |
| BZW06-28 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 31.4V; 13.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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| 1.5SMC36CA V6G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 29.1V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 39.68 грн |
| S8KC |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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| S8KCH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Application: automotive industry
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| SMAJ150CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167V; 1.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167V
Max. forward impulse current: 1.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| GPA806H |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.8kV
Application: automotive industry
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| SFA806GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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| HERA806GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Mounting: THT
Case: TO220AC
Load current: 8A
Max. off-state voltage: 0.6kV
Application: automotive industry
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| P6SMB18CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Type of diode: TVS
Tolerance: ±5%
Leakage current: 1µA
Breakdown voltage: 18V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 25A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Max. off-state voltage: 15.3V
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 25A
Type of diode: TVS
Tolerance: ±5%
Leakage current: 1µA
Breakdown voltage: 18V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.09 грн |
| 35+ | 11.43 грн |
| 100+ | 8.33 грн |
| 157+ | 5.95 грн |


























