Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66038) > Сторінка 1096 з 1101
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| P6KE24A R0G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 10500 шт: термін постачання 21-30 дні (днів) |
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| TSM170N06CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 11250 шт: термін постачання 21-30 дні (днів) |
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LL4448 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Mounting: SMD Case: MiniMELF glass Load current: 0.15A Kind of package: 7 inch reel; tape Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Max. off-state voltage: 75V Max. load current: 0.45A Type of diode: switching Semiconductor structure: single diode Capacitance: 4pF Reverse recovery time: 4ns |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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LL4448 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Mounting: SMD Case: MiniMELF glass Load current: 0.15A Kind of package: 13 inch reel; tape Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Max. off-state voltage: 75V Max. load current: 0.45A Type of diode: switching Semiconductor structure: single diode Capacitance: 4pF Reverse recovery time: 4ns |
на замовлення 2095 шт: термін постачання 21-30 дні (днів) |
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GBU802 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMAJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ30CA M2G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 55000 шт: термін постачання 21-30 дні (днів) |
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TS19820CS RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8 Application: SMPS Case: SOP8 Integrated circuit features: integrated voltage regulator; linear dimming; PWM Kind of integrated circuit: LED driver; PFC controller Type of integrated circuit: PMIC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: -0.3...19V Input voltage: 9.5...30.5V DC Frequency: 30...200kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| HER3004PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 15Ax2; TO3P; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO3P Reverse recovery time: 50ns Max. load current: 30A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HER3005PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15Ax2; TO3P; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO3P Reverse recovery time: 50ns Max. load current: 30A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM090N03CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: DPAK Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Power dissipation: 40W Drain current: 35A Gate charge: 7.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM190N08CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 160W Drain current: 14A Gate charge: 160nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 47V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 2.5mA Kind of package: tape |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
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SR810 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD; Ufmax: 920mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.92V |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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SR310 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V Max. forward impulse current: 80A Kind of package: tape |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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BZX55B3V3 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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| SMAJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMAJ10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52C10 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.18µA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52C16 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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BZT52C16S R9G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX85C8V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 8.2V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 8.2V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 761 шт: термін постачання 21-30 дні (днів) |
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| SMCJ30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ30CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSG65N068CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 60A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.7nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P6SMB30CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 15A Max. off-state voltage: 25.6V Breakdown voltage: 30V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMB |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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P6SMB30CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 1µA Max. forward impulse current: 15A Max. off-state voltage: 25.6V Breakdown voltage: 30V Peak pulse power dissipation: 0.6kW Manufacturer series: P6SMB |
на замовлення 192 шт: термін постачання 21-30 дні (днів) |
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| SMCJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C4V3 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.3V; 5mA; tape; DO35; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Zener current: 5mA |
на замовлення 813 шт: термін постачання 21-30 дні (днів) |
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ES1BAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Load current: 1A Max. off-state voltage: 100V Case: thinSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ES1BL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD Mounting: SMD Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1BALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Load current: 1A Max. off-state voltage: 100V Case: thinSMA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1BFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Load current: 1A Max. off-state voltage: 100V Case: SOD128 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1BFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Load current: 1A Max. off-state voltage: 100V Case: SOD128 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES1BH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 950mV; Ifsm: 30A Kind of package: reel; tape Mounting: SMD Reverse recovery time: 35ns Semiconductor structure: single diode Type of diode: rectifying Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 100V Case: SMA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX55C22 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 245 шт: термін постачання 21-30 дні (днів) |
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| US1J M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 52500 шт: термін постачання 21-30 дні (днів) |
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BZT52B15-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 583 шт: термін постачання 21-30 дні (днів) |
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BZT52B15S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SMCJ33CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape Application: automotive industry Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBU605G | Taiwan Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.6kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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| KBU603G | Taiwan Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 200V Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBU604G | Taiwan Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 0.4kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| KBU607G | Taiwan Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat Case: KBU Max. forward voltage: 1.1V Version: flat Electrical mounting: THT Load current: 6A Leads: round pin Kind of package: in-tray Max. off-state voltage: 1kV Max. forward impulse current: 175A Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HERA808GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8A; TO220AC; 80ns; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO220AC Reverse recovery time: 80ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HERAF808GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 8A; ITO220AC; 80ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Reverse recovery time: 80ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SS36 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZS55C15 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: 1206 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 754 шт: термін постачання 21-30 дні (днів) |
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BZS55C15 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: 1206 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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MURF1660CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: ITO220AB Max. load current: 16A Reverse recovery time: 50ns Application: automotive industry |
на замовлення 947 шт: термін постачання 21-30 дні (днів) |
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| MURF1620CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns Mounting: THT Reverse recovery time: 25ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 200V Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: ultrafast switching |
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В кошику од. на суму грн. | |||||||||||||
| MURF1640CTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns Mounting: THT Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: ultrafast switching |
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В кошику од. на суму грн. | |||||||||||||
| HERF1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns Mounting: THT Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HERF1605GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns Mounting: THT Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.4kV Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching |
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В кошику од. на суму грн. | |||||||||||||
| HERF1606GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 80ns Mounting: THT Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.6kV Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching |
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В кошику од. на суму грн. | |||||||||||||
| HERF1607GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns Mounting: THT Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 0.8kV Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching |
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В кошику од. на суму грн. | |||||||||||||
| HERF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns Mounting: THT Reverse recovery time: 80ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 1kV Application: automotive industry Semiconductor structure: common cathode; double Case: ITO220AB Type of diode: rectifying Features of semiconductor devices: superfast switching |
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В кошику од. на суму грн. | |||||||||||||
| BZV55C22 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SF34G-A | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; DO201AD; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: DO201AD Reverse recovery time: 35ns |
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В кошику од. на суму грн. |
| P6KE24A R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 10500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8272+ | 4.34 грн |
| TSM170N06CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 11250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3750+ | 30.43 грн |
| LL4448 L1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Mounting: SMD
Case: MiniMELF glass
Load current: 0.15A
Kind of package: 7 inch reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Max. off-state voltage: 75V
Max. load current: 0.45A
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Mounting: SMD
Case: MiniMELF glass
Load current: 0.15A
Kind of package: 7 inch reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Max. off-state voltage: 75V
Max. load current: 0.45A
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 4ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.78 грн |
| LL4448 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Mounting: SMD
Case: MiniMELF glass
Load current: 0.15A
Kind of package: 13 inch reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Max. off-state voltage: 75V
Max. load current: 0.45A
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Mounting: SMD
Case: MiniMELF glass
Load current: 0.15A
Kind of package: 13 inch reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Max. off-state voltage: 75V
Max. load current: 0.45A
Type of diode: switching
Semiconductor structure: single diode
Capacitance: 4pF
Reverse recovery time: 4ns
на замовлення 2095 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.48 грн |
| 167+ | 2.49 грн |
| 243+ | 1.71 грн |
| 500+ | 1.35 грн |
| 1000+ | 1.24 грн |
| 2000+ | 1.14 грн |
| GBU802 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| SMAJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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| SMAJ30CA M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 55000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20834+ | 1.75 грн |
| TS19820CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8
Application: SMPS
Case: SOP8
Integrated circuit features: integrated voltage regulator; linear dimming; PWM
Kind of integrated circuit: LED driver; PFC controller
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: -0.3...19V
Input voltage: 9.5...30.5V DC
Frequency: 30...200kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller,LED driver; -0.3÷19V; 30÷200kHz; SOP8
Application: SMPS
Case: SOP8
Integrated circuit features: integrated voltage regulator; linear dimming; PWM
Kind of integrated circuit: LED driver; PFC controller
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: -0.3...19V
Input voltage: 9.5...30.5V DC
Frequency: 30...200kHz
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| HER3004PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; TO3P; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Reverse recovery time: 50ns
Max. load current: 30A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; TO3P; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Reverse recovery time: 50ns
Max. load current: 30A
Application: automotive industry
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| HER3005PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; TO3P; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Reverse recovery time: 50ns
Max. load current: 30A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; TO3P; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO3P
Reverse recovery time: 50ns
Max. load current: 30A
Application: automotive industry
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| TSM090N03CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 40W
Drain current: 35A
Gate charge: 7.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 40W
Drain current: 35A
Gate charge: 7.5nC
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| TSM190N08CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 160W
Drain current: 14A
Gate charge: 160nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 160W
Drain current: 14A
Gate charge: 160nC
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| BZX55C47 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
на замовлення 419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.54 грн |
| 155+ | 2.70 грн |
| SR810 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD; Ufmax: 920mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.92V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD; Ufmax: 920mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.92V
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.75 грн |
| 21+ | 20.28 грн |
| 100+ | 14.38 грн |
| SR310 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.76 грн |
| 14+ | 31.92 грн |
| 16+ | 27.60 грн |
| BZX55B3V3 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 145+ | 3.18 грн |
| 150+ | 2.82 грн |
| 500+ | 2.49 грн |
| SMAJ36CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| SMAJ10CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| BZT52C10 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
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| BZT52C16 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.30 грн |
| 145+ | 2.91 грн |
| 250+ | 2.61 грн |
| BZT52C16S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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| BZX85C8V2 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 761 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.80 грн |
| 30+ | 13.96 грн |
| 100+ | 8.23 грн |
| 500+ | 5.57 грн |
| SMCJ30CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMCJ30CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| TSG65N068CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| P6SMB30CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 15A
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 15A
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
на замовлення 245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.95 грн |
| 57+ | 7.31 грн |
| 100+ | 6.73 грн |
| P6SMB30CA M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 15A
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 1µA
Max. forward impulse current: 15A
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6SMB
на замовлення 192 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.18 грн |
| 29+ | 14.71 грн |
| 100+ | 13.05 грн |
| SMCJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZX55C4V3 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; tape; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; tape; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 813 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.43 грн |
| 47+ | 8.89 грн |
| 100+ | 5.33 грн |
| 250+ | 4.27 грн |
| 500+ | 3.60 грн |
| ES1BAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
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| ES1BL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Mounting: SMD
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Mounting: SMD
Type of diode: rectifying
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| ES1BALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
Application: automotive industry
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| ES1BFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
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| ES1BFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
Application: automotive industry
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| ES1BH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 950mV; Ifsm: 30A
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 950mV; Ifsm: 30A
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
Application: automotive industry
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| BZX55C22 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 245 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.54 грн |
| 155+ | 2.70 грн |
| US1J M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28736+ | 1.26 грн |
| BZT52B15-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 583 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.01 грн |
| 40+ | 10.39 грн |
| 51+ | 8.18 грн |
| 100+ | 5.65 грн |
| 500+ | 4.42 грн |
| BZT52B15S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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| SMCJ33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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| SMCJ33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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| KBU605G |
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Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 89.51 грн |
| 10+ | 74.81 грн |
| KBU603G |
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Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU604G |
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Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| KBU607G |
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Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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| HERA808GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; TO220AC; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; TO220AC; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
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| HERAF808GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; ITO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 80ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; ITO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 80ns
Application: automotive industry
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| SS36 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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| BZS55C15 RAG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 754 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.58 грн |
| 137+ | 3.04 грн |
| 300+ | 2.90 грн |
| 500+ | 2.61 грн |
| BZS55C15 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 85+ | 5.37 грн |
| 145+ | 2.93 грн |
| 500+ | 2.33 грн |
| MURF1660CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Max. load current: 16A
Reverse recovery time: 50ns
Application: automotive industry
на замовлення 947 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.48 грн |
| 10+ | 57.35 грн |
| 25+ | 48.21 грн |
| MURF1620CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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| MURF1640CTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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| HERF1604GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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| HERF1605GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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| HERF1606GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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| HERF1607GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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| HERF1608GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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| BZV55C22 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
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| SF34G-A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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