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RS2MAL TAIWAN SEMICONDUCTOR RS2DAL SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
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RS2MALH TAIWAN SEMICONDUCTOR RS2DALH SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS2MFS TAIWAN SEMICONDUCTOR RS2DFS SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS2MFSH TAIWAN SEMICONDUCTOR RS2DFSH SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS2MH TAIWAN SEMICONDUCTOR RS2AH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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TSS40U RGG TSS40U RGG TAIWAN SEMICONDUCTOR TSS40U-RGG.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1437 шт:
термін постачання 21-30 дні (днів)
23+19.69 грн
31+13.80 грн
100+7.96 грн
500+5.44 грн
1000+4.70 грн
Мінімальне замовлення: 23
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SMF24A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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SMBJ36CAHR5G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 45900 шт:
термін постачання 21-30 дні (днів)
16150+2.35 грн
Мінімальне замовлення: 16150
В кошику  од. на суму  грн.
BC817-40 RFG TAIWAN SEMICONDUCTOR BC817-16 SERIES_K2001.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
3000+1.70 грн
Мінімальне замовлення: 3000
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BZX55C18 R0G BZX55C18 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 402 шт:
термін постачання 21-30 дні (днів)
39+11.64 грн
57+7.40 грн
100+4.47 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
1N5402G TAIWAN SEMICONDUCTOR 1n5400-d.pdf 1N5400G SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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US1J F3 US1J F3 TAIWAN SEMICONDUCTOR US1A_M.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
12+37.59 грн
23+18.12 грн
29+14.55 грн
100+13.05 грн
Мінімальне замовлення: 12
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US1JH TAIWAN SEMICONDUCTOR US1AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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ES2FAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2FH TAIWAN SEMICONDUCTOR ES2AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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BZW06-13B BZW06-13B TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
10+44.93 грн
17+25.60 грн
100+16.29 грн
Мінімальне замовлення: 10
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SMCJ5.0A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ5.0CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ5.0CAH TAIWAN SEMICONDUCTOR SMCJH SERIES_A2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SF14G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf SF11G-SF18G%20N1807%20REV.A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
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SF14G-K TAIWAN SEMICONDUCTOR SF11G-K SERIES_B2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
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TS90115CY RMG TS90115CY RMG TAIWAN SEMICONDUCTOR TS9011_I2402.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
7+68.92 грн
11+38.90 грн
25+32.58 грн
100+24.60 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
TS9011SCY RMG TS9011SCY RMG TAIWAN SEMICONDUCTOR TS9011_I2402.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 155 шт:
термін постачання 21-30 дні (днів)
14+34.01 грн
20+21.78 грн
25+19.62 грн
100+16.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TS9011SCX RFG TS9011SCX RFG TAIWAN SEMICONDUCTOR TS9011_I2402.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 436 шт:
термін постачання 21-30 дні (днів)
11+43.86 грн
15+28.76 грн
25+25.10 грн
50+22.61 грн
100+20.03 грн
250+17.54 грн
Мінімальне замовлення: 11
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TS90115CX RFG TS90115CX RFG TAIWAN SEMICONDUCTOR TS9011_H1608.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
8+63.55 грн
11+39.07 грн
25+27.35 грн
Мінімальне замовлення: 8
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TSM10N80CI C0G TSM10N80CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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TSM10N80CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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BZX84C12 RFG BZX84C12 RFG TAIWAN SEMICONDUCTOR BZX84C12-RFG.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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TSD10H120CW MNG TAIWAN SEMICONDUCTOR TSD10H100CW%20SERIES_A15.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 10A
Semiconductor structure: common cathode; double
Mounting: SMD
Max. forward voltage: 0.79V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 120V
Case: D2PAK
Type of diode: Schottky rectifying
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TSUP10H120H TAIWAN SEMICONDUCTOR TSUP10H120H_A2403.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 120V; 10A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.76V
Load current: 10A
Max. off-state voltage: 120V
Kind of package: reel; tape
Application: automotive industry
Case: TO277A
Type of diode: Schottky rectifying
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TSM70N600CH C5G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G TSM70N600CI C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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SD103BW RHG SD103BW RHG TAIWAN SEMICONDUCTOR SD103BW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
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1N4148WSH RRG TAIWAN SEMICONDUCTOR pdf.php?pn=1N4148WSH Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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ES2D TAIWAN SEMICONDUCTOR es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf es2a.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2A SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DFS TAIWAN SEMICONDUCTOR ES2BFS SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DFSH TAIWAN SEMICONDUCTOR ES2BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DH TAIWAN SEMICONDUCTOR ES2AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DVH TAIWAN SEMICONDUCTOR ES2DVH_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
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TS1935BCX5 RFG TS1935BCX5 RFG TAIWAN SEMICONDUCTOR Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Topology: boost
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT25
Operating temperature: -40...85°C
Duty cycle factor: 0...87%
Number of channels: 1
Output current: 1.9A
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Frequency: 1.2MHz
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
5+93.09 грн
25+82.29 грн
Мінімальне замовлення: 5
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TUAU10MH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; 80ns; TO277A; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.9V
Kind of package: reel; tape
Application: automotive industry
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SMF58A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af eaton-smfe-tvs-diode-power-esd-suppressor-data-sheet.pdf SMF5.0A SERIES_D2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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TSM10NC60CF C0G TSM10NC60CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
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TSM10NC65CF C0G TSM10NC65CF C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
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SS110 SS110 TAIWAN SEMICONDUCTOR SS12-SS120%20N0229%20REV.D.pdf SS12 SERIES_R2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
24+18.80 грн
34+12.30 грн
100+7.56 грн
500+5.36 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SS110LW SS110LW TAIWAN SEMICONDUCTOR SS14LW SERIES_D2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
на замовлення 20023 шт:
термін постачання 21-30 дні (днів)
17+26.85 грн
31+13.80 грн
100+8.98 грн
500+6.48 грн
1000+5.57 грн
2000+4.82 грн
2500+4.49 грн
5000+4.24 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SS110L TAIWAN SEMICONDUCTOR SS12L SERIES_Q2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 30A
Kind of package: reel; tape
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SS110LH TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
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SS110H TAIWAN SEMICONDUCTOR SS12H SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Application: automotive industry
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SS110LWH TAIWAN SEMICONDUCTOR SS14LWH SERIES_B2305.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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SS110LSH TAIWAN SEMICONDUCTOR SS12LSH SERIES_B2212.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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TSM900N06CW RPG
+1
 		TSM900N06CW RPG TAIWAN SEMICONDUCTOR TSM900N06CW_A2205.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 4.17W
Case: SOT223
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tape
Gate-source voltage: ±20V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
12+39.39 грн
17+25.35 грн
100+22.94 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TSM900N06CH X0G TAIWAN SEMICONDUCTOR TSM900N06CH_A2205.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 25W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TSM900N10CH X0G TAIWAN SEMICONDUCTOR TSM900N10_A15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 50W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TSM900N10CP ROG TAIWAN SEMICONDUCTOR TSM900N10_A15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
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US1G TAIWAN SEMICONDUCTOR us1a.pdf US1A SERIES_N2102.pdf 5399_US1G%20SMA%28DO-214AC%29.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
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RS2MAL RS2DAL SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
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RS2MALH RS2DALH SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS2MFS RS2DFS SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS2MFSH RS2DFSH SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS2MH RS2AH SERIES_B2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; 500ns; SMB; Ufmax: 1.3V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 1.3V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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TSS40U RGG TSS40U-RGG.pdf
TSS40U RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1437 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+19.69 грн
31+13.80 грн
100+7.96 грн
500+5.44 грн
1000+4.70 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
SMF24A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 26.7V; 5.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 5.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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SMBJ36CAHR5G SMBJ%20SERIES_R2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 45900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16150+2.35 грн
Мінімальне замовлення: 16150
В кошику  од. на суму  грн.
BC817-40 RFG BC817-16 SERIES_K2001.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+1.70 грн
Мінімальне замовлення: 3000
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BZX55C18 R0G
BZX55C18 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 18V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 402 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.64 грн
57+7.40 грн
100+4.47 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
1N5402G 1n5400-d.pdf 1N5400G SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
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US1J F3 US1A_M.pdf
US1J F3
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 407 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.59 грн
23+18.12 грн
29+14.55 грн
100+13.05 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
US1JH US1AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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ES2FAH ES2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES2FH ES2AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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BZW06-13B bzw065v8.pdf
BZW06-13B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.93 грн
17+25.60 грн
100+16.29 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ5.0A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ5.0CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ5.0CAH SMCJH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SF14G SF11G SERIES_H2104.pdf SF11G-SF18G%20N1807%20REV.A.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 35ns
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SF14G-K SF11G-K SERIES_B2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO41
Reverse recovery time: 35ns
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TS90115CY RMG TS9011_I2402.pdf
TS90115CY RMG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+68.92 грн
11+38.90 грн
25+32.58 грн
100+24.60 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
TS9011SCY RMG TS9011_I2402.pdf
TS9011SCY RMG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 155 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+34.01 грн
20+21.78 грн
25+19.62 грн
100+16.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
TS9011SCX RFG TS9011_I2402.pdf
TS9011SCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.2A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.65V
Output voltage: 3.3V
Output current: 0.2A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 436 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+43.86 грн
15+28.76 грн
25+25.10 грн
50+22.61 грн
100+20.03 грн
250+17.54 грн
Мінімальне замовлення: 11
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TS90115CX RFG TS9011_H1608.pdf
TS90115CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 0.25A
Case: SOT23
Mounting: SMD
Manufacturer series: TS9011
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+63.55 грн
11+39.07 грн
25+27.35 грн
Мінімальне замовлення: 8
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TSM10N80CI C0G
TSM10N80CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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TSM10N80CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.7A; 290W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.7A
Power dissipation: 290W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
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BZX84C12 RFG BZX84C12-RFG.pdf
BZX84C12 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 12V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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TSD10H120CW MNG TSD10H100CW%20SERIES_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 120V; 10A
Semiconductor structure: common cathode; double
Mounting: SMD
Max. forward voltage: 0.79V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 120V
Case: D2PAK
Type of diode: Schottky rectifying
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TSUP10H120H TSUP10H120H_A2403.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 120V; 10A; reel,tape
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.76V
Load current: 10A
Max. off-state voltage: 120V
Kind of package: reel; tape
Application: automotive industry
Case: TO277A
Type of diode: Schottky rectifying
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TSM70N600CH C5G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CI C0G
TSM70N600CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 12.6nC
Kind of package: tube
Kind of channel: enhancement
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TSM70N600CP ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.8A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: tape
Kind of channel: enhancement
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SD103BW RHG SD103BW.pdf
SD103BW RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.35A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.35A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.6V
Max. forward impulse current: 1.5A
Kind of package: reel; tape
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1N4148WSH RRG pdf.php?pn=1N4148WSH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Max. load current: 0.3A
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ES2D es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf es2a.pdf 5399_ES2D%20SMB.PDF FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2A SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DAH ES2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DAL ES2BAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DALH ES2BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; thinSMA; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DFS ES2BFS SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DFSH ES2BFSH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD128; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DH ES2AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Application: automotive industry
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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ES2DVH ES2DVH_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.9V
Application: automotive industry
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
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TS1935BCX5 RFG
TS1935BCX5 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.6÷5.5VDC; Uout: 3÷27VDC; 1.9A; SOT25
Topology: boost
Kind of integrated circuit: DC/DC converter
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: SOT25
Operating temperature: -40...85°C
Duty cycle factor: 0...87%
Number of channels: 1
Output current: 1.9A
Input voltage: 2.6...5.5V DC
Output voltage: 3...27V DC
Frequency: 1.2MHz
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+93.09 грн
25+82.29 грн
Мінімальне замовлення: 5
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TUAU10MH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; 80ns; TO277A; Ufmax: 1.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.9V
Kind of package: reel; tape
Application: automotive industry
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SMF58A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af eaton-smfe-tvs-diode-power-esd-suppressor-data-sheet.pdf SMF5.0A SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 64.4V; 2.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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TSM10NC60CF C0G
TSM10NC60CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
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TSM10NC65CF C0G
TSM10NC65CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.3A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
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SS110 SS12-SS120%20N0229%20REV.D.pdf SS12 SERIES_R2305.pdf
SS110
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 993 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.80 грн
34+12.30 грн
100+7.56 грн
500+5.36 грн
Мінімальне замовлення: 24
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SS110LW SS14LW SERIES_D2305.pdf
SS110LW
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
на замовлення 20023 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.85 грн
31+13.80 грн
100+8.98 грн
500+6.48 грн
1000+5.57 грн
2000+4.82 грн
2500+4.49 грн
5000+4.24 грн
Мінімальне замовлення: 17
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SS110L SS12L SERIES_Q2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 30A
Kind of package: reel; tape
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SS110LH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; automotive industry
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.8V
Max. load current: 1A
Application: automotive industry
Leakage current: 50µA
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SS110H SS12H SERIES_B2305.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Application: automotive industry
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SS110LWH SS14LWH SERIES_B2305.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123W; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123W
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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SS110LSH SS12LSH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Application: automotive industry
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TSM900N06CW RPG TSM900N06CW_A2205.pdf
TSM900N06CW RPG
+1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 4.17W
Case: SOT223
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tape
Gate-source voltage: ±20V
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+39.39 грн
17+25.35 грн
100+22.94 грн
Мінімальне замовлення: 12
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TSM900N06CH X0G TSM900N06CH_A2205.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 25W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TSM900N10CH X0G TSM900N10_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Power dissipation: 50W
Case: IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 9.3nC
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
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TSM900N10CP ROG TSM900N10_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 50W
Case: DPAK; TO252
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of channel: enhancement
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US1G us1a.pdf US1A SERIES_N2102.pdf 5399_US1G%20SMA%28DO-214AC%29.PDF
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Max. forward impulse current: 30A
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