Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66067) > Сторінка 1097 з 1102

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BZX55C30 R0G BZX55C30 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
40+10.60 грн
Мінімальне замовлення: 40
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SMBJ58A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ58AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ36CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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SMBJ33CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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RMB4S TAIWAN SEMICONDUCTOR RMB2S_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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1N4749A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TSCDT20065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT20065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SMCJ30AH TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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MBRS1045CT TAIWAN SEMICONDUCTOR MBRS1035CT%20SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
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SF1604PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1604GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1606GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
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SF1606PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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SF1608GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF1608PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF16G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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BAT54W RFG
+1
 		BAT54W RFG TAIWAN SEMICONDUCTOR BAT54W SERIES_D2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
50+8.83 грн
72+5.74 грн
120+3.42 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
ES2J TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TESDH5V0U04P2Q1 RNG TAIWAN SEMICONDUCTOR TESDH5V0U04P2Q1 _A2110.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 RGG ABS6 RGG TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
15+29.14 грн
Мінімальне замовлення: 15
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BZT52C13 RHG BZT52C13 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
50+8.83 грн
79+5.25 грн
126+3.26 грн
250+2.77 грн
500+2.59 грн
Мінімальне замовлення: 50
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BZT52C12 RHG BZT52C12 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
50+8.83 грн
82+5.00 грн
120+3.43 грн
250+2.95 грн
Мінімальне замовлення: 50
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MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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MUR860 MUR860 TAIWAN SEMICONDUCTOR MUR8x0.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TAIWAN SEMICONDUCTOR TSS70U_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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SS26 TAIWAN SEMICONDUCTOR pdf.php?pn=SS26 5399_SS26%20SMA.PDF 3372_SS26A00000S060.pdf 5272_SS26.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
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P6SMB24CA M4G P6SMB24CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 19A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
35+12.38 грн
100+11.48 грн
Мінімальне замовлення: 35
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TSS0230LU RGG TAIWAN SEMICONDUCTOR TSS0230LU_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13M SS13M TAIWAN SEMICONDUCTOR SS13M%20SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
16+28.26 грн
32+13.04 грн
100+8.28 грн
500+6.23 грн
1000+5.49 грн
Мінімальне замовлення: 16
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SR1060 C0 SR1060 C0 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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P4SMA100A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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BZX85C6V8 R0G BZX85C6V8 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
65+7.07 грн
100+5.49 грн
250+4.84 грн
Мінімальне замовлення: 65
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TSM2323CX RFG TSM2323CX RFG TAIWAN SEMICONDUCTOR TSM2323_F15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
6+75.07 грн
8+58.22 грн
50+34.93 грн
100+29.85 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMF12A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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1PGSMB5931 1PGSMB5931 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
4+110.39 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU1006 TAIWAN SEMICONDUCTOR GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SF26G TAIWAN SEMICONDUCTOR SF21G-SF28G%20N1641%20REV.C.pdf SF21G SERIES_H2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 50A; DO15; 35ns
Mounting: THT
Load current: 2A
Case: DO15
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Reverse recovery time: 35ns
Type of diode: rectifying
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RS1G RS1G TAIWAN SEMICONDUCTOR RS1G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1G TAIWAN SEMICONDUCTOR RS1G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1GAL TAIWAN SEMICONDUCTOR RS1DAL SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS1GFS TAIWAN SEMICONDUCTOR RS1DFS SERIES_D2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS1GALH TAIWAN SEMICONDUCTOR RS1DALH SERIES_C2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1GFSH TAIWAN SEMICONDUCTOR RS1DFSH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1GH TAIWAN SEMICONDUCTOR RS1AH SERIES_B2304.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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RS1GLWH TAIWAN SEMICONDUCTOR RS1DLWH SERIES_A2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ABS10 ABS10 TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; ABS
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
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1.5SMC36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36AH TAIWAN SEMICONDUCTOR 1.5SMCH SERIES_B2207.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
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TS358CD C3G TS358CD C3G TAIWAN SEMICONDUCTOR TS358_C2408.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 2122 шт:
термін постачання 21-30 дні (днів)
17+27.38 грн
24+17.80 грн
26+16.07 грн
50+15.01 грн
100+14.02 грн
250+12.87 грн
500+12.30 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1PGSMB5927 1PGSMB5927 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
9+52.11 грн
12+34.61 грн
25+26.16 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P4SMA6.8A TAIWAN SEMICONDUCTOR tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf P4SMA SERIES_S2102.pdf 5272_P4SMA6.8A.pdf SMAP4SMA6V8ASA.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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MBRS15100CT TAIWAN SEMICONDUCTOR MBRS1535CT SERIES_L2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 7.5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.92V
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MBR2560CT MBR2560CT TAIWAN SEMICONDUCTOR mbr2560ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 60V
Max. forward impulse current: 200A
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
6+76.83 грн
10+63.14 грн
50+59.04 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MUR360S TAIWAN SEMICONDUCTOR MUR305S SERIES_J2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MUR360SBH TAIWAN SEMICONDUCTOR MUR340SBH SERIES_B2211.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR360SH TAIWAN SEMICONDUCTOR MUR305SH SERIES_B2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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SMCJ5.0A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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BZX55C30 R0G
BZX55C30 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 30V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
40+10.60 грн
Мінімальне замовлення: 40
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SMBJ58A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ58AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMBJ36CAH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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SMBJ33CAH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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RMB4S RMB2S_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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1N4749A 1N4736AT-D.PDF 1N47xxA-SERIES.pdf 1n4736at-d.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; 10.5mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Zener current: 10.5mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TSCDT20065G1 pdf.php?pn=TSCDT20065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SMCJ30AH pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A55ADB69180D6&compId=SMCJH.pdf?ci_sign=4ad77f3cf62eec6308f0555f4d1e7b31e2fd26c7
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Application: automotive industry
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MBRS1045CT MBRS1035CT%20SERIES_M2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 5Ax2
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
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SF1604PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1604GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1606GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
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SF1606PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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SF1608GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF1608PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF16G SF11G SERIES_H2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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BAT54W RFG BAT54W SERIES_D2102.pdf
BAT54W RFG
+1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.83 грн
72+5.74 грн
120+3.42 грн
Мінімальне замовлення: 50
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ES2J ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TESDH5V0U04P2Q1 RNG TESDH5V0U04P2Q1 _A2110.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 RGG ABS2_ser.pdf
ABS6 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.14 грн
Мінімальне замовлення: 15
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BZT52C13 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C13 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.83 грн
79+5.25 грн
126+3.26 грн
250+2.77 грн
500+2.59 грн
Мінімальне замовлення: 50
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BZT52C12 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C12 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.83 грн
82+5.00 грн
120+3.43 грн
250+2.95 грн
Мінімальне замовлення: 50
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MUR120S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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MUR860 MUR8x0.pdf
MUR860
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TSS70U_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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SS26 pdf.php?pn=SS26 5399_SS26%20SMA.PDF 3372_SS26A00000S060.pdf 5272_SS26.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
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P6SMB24CA M4G P6SMB_ser.pdf
P6SMB24CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 19A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Manufacturer series: P6SMB
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.38 грн
100+11.48 грн
Мінімальне замовлення: 35
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TSS0230LU RGG TSS0230LU_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.26 грн
32+13.04 грн
100+8.28 грн
500+6.23 грн
1000+5.49 грн
Мінімальне замовлення: 16
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SR1060 C0
SR1060 C0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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P4SMA100A littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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BZX85C6V8 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V8 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
65+7.07 грн
100+5.49 грн
250+4.84 грн
Мінімальне замовлення: 65
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TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+75.07 грн
8+58.22 грн
50+34.93 грн
100+29.85 грн
Мінімальне замовлення: 6
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SMF12A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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1PGSMB5931
1PGSMB5931
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 83mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 83mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+110.39 грн
Мінімальне замовлення: 4
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GBU1006 description GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SF26G SF21G-SF28G%20N1641%20REV.C.pdf SF21G SERIES_H2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 50A; DO15; 35ns
Mounting: THT
Load current: 2A
Case: DO15
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Reverse recovery time: 35ns
Type of diode: rectifying
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RS1G RS1G.pdf
RS1G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1G RS1G.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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RS1GAL RS1DAL SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS1GFS RS1DFS SERIES_D2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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RS1GALH RS1DALH SERIES_C2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1GFSH RS1DFSH SERIES_B2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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RS1GH RS1AH SERIES_B2304.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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RS1GLWH RS1DLWH SERIES_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ABS10 ABS2_ser.pdf
ABS10
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; ABS
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
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1.5SMC36A littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC36AH 1.5SMCH SERIES_B2207.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
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TS358CD C3G TS358_C2408.pdf
TS358CD C3G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 2122 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.38 грн
24+17.80 грн
26+16.07 грн
50+15.01 грн
100+14.02 грн
250+12.87 грн
500+12.30 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1PGSMB5927
1PGSMB5927
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.11 грн
12+34.61 грн
25+26.16 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P4SMA6.8A tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 P4SMA.pdf P4SMA SERIES_S2102.pdf 5272_P4SMA6.8A.pdf SMAP4SMA6V8ASA.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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MBRS15100CT MBRS1535CT SERIES_L2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 7.5Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.92V
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MBR2560CT mbr2560ct-d.pdf
MBR2560CT
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Case: TO220AB
Type of diode: Schottky rectifying
Max. forward voltage: 0.75V
Load current: 12.5A x2
Max. load current: 25A
Max. off-state voltage: 60V
Max. forward impulse current: 200A
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.83 грн
10+63.14 грн
50+59.04 грн
Мінімальне замовлення: 6
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MUR360S MUR305S SERIES_J2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
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MUR360SBH MUR340SBH SERIES_B2211.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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MUR360SH MUR305SH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
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SMCJ5.0A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 171A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 171A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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