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TSM090N03CP ROG TAIWAN SEMICONDUCTOR TSM090N03CP_B1807.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 40W
Drain current: 35A
Gate charge: 7.5nC
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TSM190N08CZ C0G TAIWAN SEMICONDUCTOR TSM190N08_B15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 160W
Drain current: 14A
Gate charge: 160nC
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BZX55C47 R0G BZX55C47 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
130+3.51 грн
155+2.68 грн
Мінімальне замовлення: 130
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SR810 SR810 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD; Ufmax: 920mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.92V
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
17+27.57 грн
21+20.15 грн
100+14.29 грн
Мінімальне замовлення: 17
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SR310 SR310 TAIWAN SEMICONDUCTOR SR302 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
10+44.47 грн
14+31.71 грн
16+27.42 грн
Мінімальне замовлення: 10
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BZX55B3V3 A0G BZX55B3V3 A0G TAIWAN SEMICONDUCTOR BZX55B2V4%20SERIES_F1610.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
145+3.16 грн
150+2.80 грн
500+2.47 грн
Мінімальне замовлення: 145
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SMAJ36CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ10CA TAIWAN SEMICONDUCTOR SMAJ.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d 5399_SMAJ10CA%20SMA.pdf SMAJ10CA00S0WX.pdf smaj%20series(400w,5v_440v).pdf 824501101.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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BZT52C10 RHG BZT52C10 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
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BZT52C16 RHG BZT52C16 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
100+4.54 грн
135+3.06 грн
250+2.62 грн
Мінімальне замовлення: 100
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BZT52C16S R9G BZT52C16S R9G TAIWAN SEMICONDUCTOR BZT52C2V4S SERIES_J2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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BZX85C8V2 R0G BZX85C8V2 R0G TAIWAN SEMICONDUCTOR BZX85C10-R0G.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 25mA
Leakage current: 1µA
Kind of package: tape
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)
24+18.68 грн
30+13.87 грн
100+8.18 грн
500+5.53 грн
1000+4.79 грн
Мінімальне замовлення: 24
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SMCJ30CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ30CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TSG65N068CE RVG TAIWAN SEMICONDUCTOR TSG65N068CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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P6SMB30CA P6SMB30CA TAIWAN SEMICONDUCTOR P6SMB_ser.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
50+8.89 грн
57+7.27 грн
100+6.69 грн
Мінімальне замовлення: 50
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P6SMB30CA M4G P6SMB30CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
13+34.95 грн
29+14.62 грн
100+12.97 грн
Мінімальне замовлення: 13
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SMCJ24CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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BZX55C4V3 R0G BZX55C4V3 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; tape; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 813 шт:
термін постачання 21-30 дні (днів)
34+13.34 грн
47+8.84 грн
100+5.29 грн
250+4.25 грн
500+3.58 грн
Мінімальне замовлення: 34
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ES1BAL ES1BAL TAIWAN SEMICONDUCTOR ES1BAL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
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ES1BL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD
Mounting: SMD
Type of diode: rectifying
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ES1BALH TAIWAN SEMICONDUCTOR ES1BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
Application: automotive industry
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ES1BFS TAIWAN SEMICONDUCTOR ES1BFS SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
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ES1BFSH TAIWAN SEMICONDUCTOR ES1BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
Application: automotive industry
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ES1BH TAIWAN SEMICONDUCTOR ES1AH SERIES_B2112.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 950mV; Ifsm: 30A
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
Application: automotive industry
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
на замовлення 265 шт:
термін постачання 21-30 дні (днів)
130+3.51 грн
155+2.68 грн
Мінімальне замовлення: 130
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US1J M2G TAIWAN SEMICONDUCTOR US1A%20SERIES_N2102.pdf Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
28736+1.25 грн
Мінімальне замовлення: 28736
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BZT52B15-G RHG BZT52B15-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 583 шт:
термін постачання 21-30 дні (днів)
27+16.90 грн
40+10.32 грн
51+8.13 грн
100+5.62 грн
500+4.39 грн
Мінімальне замовлення: 27
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BZT52B15S RRG BZT52B15S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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SMCJ33CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ33CAH TAIWAN SEMICONDUCTOR SMCJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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KBU605G Taiwan Semiconductor KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
5+88.94 грн
10+74.33 грн
Мінімальне замовлення: 5
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KBU603G Taiwan Semiconductor KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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KBU604G Taiwan Semiconductor KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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KBU607G Taiwan Semiconductor KBU607G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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HERA808GH TAIWAN SEMICONDUCTOR HERA801G%20SERIES_J2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; TO220AC; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
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HERAF808GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; ITO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 80ns
Application: automotive industry
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SS36 SS36 TAIWAN SEMICONDUCTOR SS36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BZS55C15 RAG BZS55C15 RAG TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 754 шт:
термін постачання 21-30 дні (днів)
125+3.56 грн
137+3.02 грн
300+2.88 грн
500+2.59 грн
Мінімальне замовлення: 125
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BZS55C15 RXG BZS55C15 RXG TAIWAN SEMICONDUCTOR BZS55C2V4%20SERIES_D1612.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 730 шт:
термін постачання 21-30 дні (днів)
85+5.34 грн
145+2.91 грн
500+2.31 грн
Мінімальне замовлення: 85
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MURF1660CTH MURF1660CTH TAIWAN SEMICONDUCTOR MURF1620CT SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 50ns
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Mounting: THT
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
на замовлення 964 шт:
термін постачання 21-30 дні (днів)
6+71.03 грн
10+56.99 грн
25+47.90 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MURF1620CTH TAIWAN SEMICONDUCTOR MURF1620CT SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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MURF1640CTH TAIWAN SEMICONDUCTOR MURF1620CT SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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HERF1604GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1605GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1606GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1607GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1608GH TAIWAN SEMICONDUCTOR HERF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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BZV55C22 L0G TAIWAN SEMICONDUCTOR BZV55C2V4 SERIES_H2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
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SF34G-A TAIWAN SEMICONDUCTOR SF31G-A SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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MUR320S TAIWAN SEMICONDUCTOR MUR305S SERIES_J2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
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MUR320SBH TAIWAN SEMICONDUCTOR MUR305SBH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
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MUR320SH TAIWAN SEMICONDUCTOR MUR305SH SERIES_B2212.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Application: automotive industry
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BZX55C3V0 R0G BZX55C3V0 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
39+11.56 грн
58+7.19 грн
100+4.34 грн
500+3.05 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MBR10100 MBR10100 TAIWAN SEMICONDUCTOR MBR1035 SERIES_M2103.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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MBRAD860H TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
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TS103ACS RLG TS103ACS RLG TAIWAN SEMICONDUCTOR Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
8+56.03 грн
13+33.70 грн
25+29.81 грн
Мінімальне замовлення: 8
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KBL406G KBL406G TAIWAN SEMICONDUCTOR KBL407G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
5+91.61 грн
10+54.01 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES1JL-09 TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+4.06 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
TS34118CS28 RDG TS34118CS28 RDG TAIWAN SEMICONDUCTOR TS34118CS28.pdf Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Kind of package: reel; tape
Integrated circuit features: voice switched speakerphone system
Mounting: SMD
Case: SOP28
Supply voltage: 3...6.5V DC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+263.27 грн
5+219.68 грн
Мінімальне замовлення: 2
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TSM090N03CP ROG TSM090N03CP_B1807.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 40W
Drain current: 35A
Gate charge: 7.5nC
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TSM190N08CZ C0G TSM190N08_B15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 14A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 160W
Drain current: 14A
Gate charge: 160nC
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BZX55C47 R0G
BZX55C47 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 47V; 2.5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 47V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 2.5mA
Kind of package: tape
на замовлення 419 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
130+3.51 грн
155+2.68 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
SR810
SR810
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8A; DO201AD; Ufmax: 920mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.92V
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.57 грн
21+20.15 грн
100+14.29 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
SR310 SR302 SERIES_J2105.pdf
SR310
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.47 грн
14+31.71 грн
16+27.42 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BZX55B3V3 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B3V3 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
145+3.16 грн
150+2.80 грн
500+2.47 грн
Мінімальне замовлення: 145
В кошику  од. на суму  грн.
SMAJ36CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ10CA SMAJ.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d 5399_SMAJ10CA%20SMA.pdf SMAJ10CA00S0WX.pdf smaj%20series(400w,5v_440v).pdf 824501101.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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BZT52C10 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C10 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.18µA
Zener current: 5mA
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BZT52C16 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C16 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.54 грн
135+3.06 грн
250+2.62 грн
Мінімальне замовлення: 100
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BZT52C16S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C16S R9G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 16V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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BZX85C8V2 R0G BZX85C10-R0G.pdf
BZX85C8V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 8.2V; 25mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 8.2V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 25mA
Leakage current: 1µA
Kind of package: tape
на замовлення 1484 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.68 грн
30+13.87 грн
100+8.18 грн
500+5.53 грн
1000+4.79 грн
Мінімальне замовлення: 24
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SMCJ30CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ30CAH SMCJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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TSG65N068CE RVG TSG65N068CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 30A; Idm: 60A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 60A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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P6SMB30CA description P6SMB_ser.pdf
P6SMB30CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.89 грн
57+7.27 грн
100+6.69 грн
Мінімальне замовлення: 50
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P6SMB30CA M4G P6SMB_ser.pdf
P6SMB30CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 15A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.95 грн
29+14.62 грн
100+12.97 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ24CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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BZX55C4V3 R0G
BZX55C4V3 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; tape; DO35; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 813 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.34 грн
47+8.84 грн
100+5.29 грн
250+4.25 грн
500+3.58 грн
Мінімальне замовлення: 34
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ES1BAL ES1BAL SERIES_C2103.pdf
ES1BAL
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
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ES1BL ES1AL SERIES_L2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD
Mounting: SMD
Type of diode: rectifying
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ES1BALH ES1BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; thinSMA; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: thinSMA
Application: automotive industry
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ES1BFS ES1BFS SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
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ES1BFSH ES1BFSH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SOD128; Ufmax: 950mV
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. off-state voltage: 100V
Case: SOD128
Application: automotive industry
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ES1BH ES1AH SERIES_B2112.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMA; Ufmax: 950mV; Ifsm: 30A
Kind of package: reel; tape
Mounting: SMD
Reverse recovery time: 35ns
Semiconductor structure: single diode
Type of diode: rectifying
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Case: SMA
Application: automotive industry
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BZX55C22 R0G
BZX55C22 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Kind of package: tape
Zener current: 5mA
на замовлення 265 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
130+3.51 грн
155+2.68 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
US1J M2G US1A%20SERIES_N2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 52500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28736+1.25 грн
Мінімальне замовлення: 28736
В кошику  од. на суму  грн.
BZT52B15-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B15-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 15V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 583 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.90 грн
40+10.32 грн
51+8.13 грн
100+5.62 грн
500+4.39 грн
Мінімальне замовлення: 27
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BZT52B15S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B15S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
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SMCJ33CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ33CAH SMCJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 29A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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KBU605G KBU607G_ser.pdf
Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.6kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+88.94 грн
10+74.33 грн
Мінімальне замовлення: 5
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KBU603G KBU607G_ser.pdf
Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 200V
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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KBU604G KBU607G_ser.pdf
Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 0.4kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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KBU607G KBU607G_ser.pdf
Виробник: Taiwan Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 175A; flat
Case: KBU
Max. forward voltage: 1.1V
Version: flat
Electrical mounting: THT
Load current: 6A
Leads: round pin
Kind of package: in-tray
Max. off-state voltage: 1kV
Max. forward impulse current: 175A
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
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HERA808GH HERA801G%20SERIES_J2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; TO220AC; 80ns; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Reverse recovery time: 80ns
Application: automotive industry
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HERAF808GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; ITO220AC; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 80ns
Application: automotive industry
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SS36 SS36.pdf
SS36
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BZS55C15 RAG
BZS55C15 RAG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 754 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.56 грн
137+3.02 грн
300+2.88 грн
500+2.59 грн
Мінімальне замовлення: 125
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BZS55C15 RXG BZS55C2V4%20SERIES_D1612.pdf
BZS55C15 RXG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: 1206
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 730 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
85+5.34 грн
145+2.91 грн
500+2.31 грн
Мінімальне замовлення: 85
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MURF1660CTH MURF1620CT SERIES_K2105.pdf
MURF1660CTH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 50ns
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Mounting: THT
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
на замовлення 964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+71.03 грн
10+56.99 грн
25+47.90 грн
Мінімальне замовлення: 6
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MURF1620CTH MURF1620CT SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 25ns
Mounting: THT
Reverse recovery time: 25ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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MURF1640CTH MURF1620CT SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
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HERF1604GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1605GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Mounting: THT
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1606GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1607GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.8kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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HERF1608GH HERF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8Ax2; ITO220AB; 80ns
Mounting: THT
Reverse recovery time: 80ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 1kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
Type of diode: rectifying
Features of semiconductor devices: superfast switching
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BZV55C22 L0G BZV55C2V4 SERIES_H2301.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
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SF34G-A SF31G-A SERIES_B2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; DO201AD; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO201AD
Reverse recovery time: 35ns
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MUR320S MUR305S SERIES_J2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
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MUR320SBH MUR305SBH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMB; Ufmax: 900mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.9V
Kind of package: reel; tape
Application: automotive industry
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MUR320SH MUR305SH SERIES_B2212.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.875V
Kind of package: reel; tape
Application: automotive industry
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BZX55C3V0 R0G
BZX55C3V0 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; 5mA; tape; DO35; single diode; Ir: 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 4µA
Zener current: 5mA
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.56 грн
58+7.19 грн
100+4.34 грн
500+3.05 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
MBR10100 MBR1035 SERIES_M2103.pdf
MBR10100
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
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MBRAD860H
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Application: automotive industry
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TS103ACS RLG
TS103ACS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 3÷18VDC; SOP8; 5mV; Ch: dual
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: SOP8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Slew rate: 0.5V/μs
Voltage supply range: 3...18V DC
Bandwidth: 1MHz
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.03 грн
13+33.70 грн
25+29.81 грн
Мінімальне замовлення: 8
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KBL406G KBL407G_ser.pdf
KBL406G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBL
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Features of semiconductor devices: glass passivated
Max. forward voltage: 1.1V
на замовлення 98 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.61 грн
10+54.01 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES1JL-09
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+4.06 грн
Мінімальне замовлення: 10000
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TS34118CS28 RDG TS34118CS28.pdf
TS34118CS28 RDG
Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Kind of package: reel; tape
Integrated circuit features: voice switched speakerphone system
Mounting: SMD
Case: SOP28
Supply voltage: 3...6.5V DC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+263.27 грн
5+219.68 грн
Мінімальне замовлення: 2
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