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P4KE68A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4SMA150A TAIWAN SEMICONDUCTOR P4SMA.pdf SMAP4SMA150ASA.pdf tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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P4SMA150CA TAIWAN SEMICONDUCTOR SMAP4SMA150CAC.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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LL4448 L1 LL4448 L1 TAIWAN SEMICONDUCTOR LL4448.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: 7 inch reel; tape
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
2+225.96 грн
Мінімальне замовлення: 2
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LL4448 L0G LL4448 L0G TAIWAN SEMICONDUCTOR LL4148 SERIES_K2301.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: 13 inch reel; tape
на замовлення 1595 шт:
термін постачання 14-30 дні (днів)
84+5.42 грн
143+2.94 грн
204+2.06 грн
500+1.63 грн
1000+1.46 грн
Мінімальне замовлення: 84
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SMAJ26AH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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SMBJ16CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TPMR6GH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 60ns
Load current: 6A
Max. forward voltage: 1.8V
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
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TPMR6JH TAIWAN SEMICONDUCTOR TPMR6GH SERIES_B2309.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 60ns
Load current: 6A
Max. forward voltage: 1V
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
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BZT52C24 RHG BZT52C24 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
36+12.65 грн
63+6.71 грн
117+3.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX84C4V7 RFG BZX84C4V7 RFG TAIWAN SEMICONDUCTOR BZX84C12-RFG.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
111+4.09 грн
119+3.36 грн
Мінімальне замовлення: 111
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SR110 TAIWAN SEMICONDUCTOR SR102 SERIES_G2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. off-state voltage: 0.1kV
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
32+13.43 грн
100+7.81 грн
500+5.46 грн
Мінімальне замовлення: 21
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TS2596SCS50 RLG TS2596SCS50 RLG TAIWAN SEMICONDUCTOR TS2596SCS_C1602.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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P4SMA15A M2G P4SMA15A M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
36+12.83 грн
39+10.83 грн
Мінімальне замовлення: 36
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P6SMB15CA P6SMB15CA TAIWAN SEMICONDUCTOR tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 P6SMB.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
14+34.35 грн
22+19.72 грн
100+13.93 грн
Мінімальне замовлення: 14
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SMBJ12CA TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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1N5408G TAIWAN SEMICONDUCTOR 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
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TSM60NB190CI C0G TSM60NB190CI C0G TAIWAN SEMICONDUCTOR TSM60NB190_D1608.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NB190CZ C0G TAIWAN SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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BZW04-13 TAIWAN SEMICONDUCTOR BZW04 SERIES_J2104.pdf en.CD00000693.pdf bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 14.3V; 19A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-13B TAIWAN SEMICONDUCTOR en.CD00000693.pdf BZW04 SERIES_J2104.pdf bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 19A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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MBRAD2060H TAIWAN SEMICONDUCTOR MBRAD2060H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 20A; reel,tape
Max. forward voltage: 0.75V
Load current: 20A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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TS19501CB10H RBG TAIWAN SEMICONDUCTOR TS19501CB10H_A1911.pdf Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
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TS19503CB10H RBG TAIWAN SEMICONDUCTOR TS19503CB10H_A2103.pdf Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
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SMBJ18A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ85CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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ES1GL ES1GL TAIWAN SEMICONDUCTOR ES1AL SERIES_L2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
21+21.69 грн
25+17.37 грн
100+10.07 грн
Мінімальне замовлення: 21
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ES1GLW TAIWAN SEMICONDUCTOR ES1DLW SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GAL TAIWAN SEMICONDUCTOR ES1BAL SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GALH TAIWAN SEMICONDUCTOR ES1BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GFS TAIWAN SEMICONDUCTOR ES1BFS SERIES_C2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GFSH TAIWAN SEMICONDUCTOR ES1BFSH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GH TAIWAN SEMICONDUCTOR ES1AH SERIES_B2112.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GLWH TAIWAN SEMICONDUCTOR ES1DLWH SERIES_B2110.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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SS13 SS13 TAIWAN SEMICONDUCTOR ss19-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6414 шт:
термін постачання 14-30 дні (днів)
46+9.94 грн
52+8.22 грн
100+6.88 грн
250+6.21 грн
500+5.79 грн
1000+5.46 грн
2500+4.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SS13L SS13L TAIWAN SEMICONDUCTOR pdf.php?pn=SS13L Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
40+11.39 грн
100+9.77 грн
500+8.16 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SS13M SS13M TAIWAN SEMICONDUCTOR SS13M%20SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
16+28.92 грн
29+14.52 грн
100+8.64 грн
500+6.29 грн
1000+5.54 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
TSM025NB04CR RLG TAIWAN SEMICONDUCTOR TSMxxxNB0x_Newsletter.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TAIWAN SEMICONDUCTOR TSM025NB04LCR_B1804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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SMAJ30CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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RMB2S TAIWAN SEMICONDUCTOR RMB2S_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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P6SMB36A R4 P6SMB36A R4 TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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P6SMB150CA P6SMB150CA TAIWAN SEMICONDUCTOR P6SMB_ser.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
15+31.63 грн
18+23.50 грн
25+19.64 грн
100+14.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
TSM2305CX RFG TSM2305CX RFG TAIWAN SEMICONDUCTOR TSM2305_E15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
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GBU1006 TAIWAN SEMICONDUCTOR GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf description Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SS14 TAIWAN SEMICONDUCTOR ss19-d.pdf pdf.php?pn=SS14 %5BLumimax%5DSS12~SS100.pdf 5399_SS14%20SMA.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
32+14.46 грн
42+10.16 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
TS2596SCS RLG TS2596SCS RLG TAIWAN SEMICONDUCTOR TS2596SCS_C1602.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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TS2596CM533 RNG TAIWAN SEMICONDUCTOR TS2596_G1608.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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SK86C SK86C TAIWAN SEMICONDUCTOR SK86C00000S060.pdf SK82C SERIES_L2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. forward voltage: 0.75V
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
9+52.42 грн
13+32.56 грн
20+29.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P4SMA36A M2G P4SMA36A M2G TAIWAN SEMICONDUCTOR P4SMA15A-M2G.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
27+16.81 грн
40+10.49 грн
100+9.23 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
1N4007G 1N4007G TAIWAN SEMICONDUCTOR 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
23+19.88 грн
31+13.93 грн
37+11.50 грн
100+5.53 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
1.5SMC30CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Case: DO214AB; SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Max. forward impulse current: 38A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Peak pulse power dissipation: 1.5kW
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SMAJ28A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMCJ28CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMAJ33A SMAJ33A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 7499 шт:
термін постачання 14-30 дні (днів)
18+25.31 грн
28+15.53 грн
100+8.86 грн
500+6.24 грн
1000+5.48 грн
2000+4.88 грн
5000+4.26 грн
Мінімальне замовлення: 18
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SK56C TAIWAN SEMICONDUCTOR SK52C SERIES_S2311.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
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P4KE30A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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P4KE68A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 64.6V; 4.5A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 58.1V
Breakdown voltage: 64.6V
Max. forward impulse current: 4.5A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4SMA150A P4SMA.pdf SMAP4SMA150ASA.pdf tvs-diodes-p4sma-datasheet?assetguid=d4a000f4-a1f8-43e4-ba75-ac288263ba41
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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P4SMA150CA SMAP4SMA150CAC.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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LL4448 L1 LL4448.pdf
LL4448 L1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: 7 inch reel; tape
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+225.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LL4448 L0G LL4148 SERIES_K2301.pdf
LL4448 L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: MiniMELF glass
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: 13 inch reel; tape
на замовлення 1595 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
84+5.42 грн
143+2.94 грн
204+2.06 грн
500+1.63 грн
1000+1.46 грн
Мінімальне замовлення: 84
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SMAJ26AH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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SMBJ16CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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TPMR6GH TPMR6GH SERIES_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; 60ns; TO277A; Ufmax: 1.8V
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 60ns
Load current: 6A
Max. forward voltage: 1.8V
Max. off-state voltage: 0.4kV
Application: automotive industry
Type of diode: rectifying
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TPMR6JH TPMR6GH SERIES_B2309.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 60ns; TO277A; Ufmax: 1V; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TO277A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Reverse recovery time: 60ns
Load current: 6A
Max. forward voltage: 1V
Max. off-state voltage: 0.6kV
Application: automotive industry
Type of diode: rectifying
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BZT52C24 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C24 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.65 грн
63+6.71 грн
117+3.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZX84C4V7 RFG BZX84C12-RFG.pdf
BZX84C4V7 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
111+4.09 грн
119+3.36 грн
Мінімальне замовлення: 111
В кошику  од. на суму  грн.
SR110 SR102 SERIES_G2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; Ufmax: 850mV
Case: DO41
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Load current: 1A
Max. off-state voltage: 0.1kV
на замовлення 544 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
32+13.43 грн
100+7.81 грн
500+5.46 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
TS2596SCS50 RLG TS2596SCS_C1602.pdf
TS2596SCS50 RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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P4SMA15A M2G P4SMA15A-M2G.pdf
P4SMA15A M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.83 грн
39+10.83 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
P6SMB15CA tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 P6SMB.pdf
P6SMB15CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+34.35 грн
22+19.72 грн
100+13.93 грн
Мінімальне замовлення: 14
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SMBJ12CA SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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1N5408G 1n5400-d.pdf 1N5400G%20SERIES_K2105.pdf 1N5400G-1N5408G%20N1631%20REV.A.pdf 1N5400G SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD
Mounting: THT
Load current: 3A
Max. forward impulse current: 125A
Max. off-state voltage: 1kV
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
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TSM60NB190CI C0G TSM60NB190_D1608.pdf
TSM60NB190CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NB190CZ C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.8A; 150.6W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.8A
Power dissipation: 150.6W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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BZW04-13 BZW04 SERIES_J2104.pdf en.CD00000693.pdf bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 14.3V; 19A; unidirectional; DO41; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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BZW04-13B en.CD00000693.pdf BZW04 SERIES_J2104.pdf bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 19A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Manufacturer series: BZW04
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MBRAD2060H MBRAD2060H_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 60V; 20A; reel,tape
Max. forward voltage: 0.75V
Load current: 20A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: thinDPAK
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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TS19501CB10H RBG TS19501CB10H_A1911.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; boost,buck-boost,SEPIC; LED driver; MSOP10; Ch: 1
Type of integrated circuit: driver
Topology: boost; buck-boost; SEPIC
Kind of integrated circuit: LED driver
Case: MSOP10
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: automotive industry
Operating voltage: 8...38V DC
Frequency: 70...700kHz
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; undervoltage UVP
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TS19503CB10H RBG TS19503CB10H_A2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
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SMBJ18A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMCJ85CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 11.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 11.5A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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ES1GL ES1AL SERIES_L2103.pdf
ES1GL
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.69 грн
25+17.37 грн
100+10.07 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
ES1GLW ES1DLW SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GAL ES1BAL SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GALH ES1BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GFS ES1BFS SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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ES1GFSH ES1BFSH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GH ES1AH SERIES_B2112.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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ES1GLWH ES1DLWH SERIES_B2110.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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SS13 ss19-d.pdf
SS13
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6414 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.94 грн
52+8.22 грн
100+6.88 грн
250+6.21 грн
500+5.79 грн
1000+5.46 грн
2500+4.95 грн
Мінімальне замовлення: 46
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SS13L pdf.php?pn=SS13L
SS13L
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 650 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
40+11.39 грн
100+9.77 грн
500+8.16 грн
Мінімальне замовлення: 40
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SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+28.92 грн
29+14.52 грн
100+8.64 грн
500+6.29 грн
1000+5.54 грн
Мінімальне замовлення: 16
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TSM025NB04CR RLG TSMxxxNB0x_Newsletter.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 113nC
Kind of package: tape
Kind of channel: enhancement
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TSM025NB04LCR RLG TSM025NB04LCR_B1804.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 24A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 24A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tape
Kind of channel: enhancement
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SMAJ30CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3V; 8.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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RMB2S RMB2S_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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P6SMB36A R4 P6SMB_ser.pdf
P6SMB36A R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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P6SMB150CA description P6SMB_ser.pdf
P6SMB150CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Leakage current: 1µA
Max. forward impulse current: 3A
Max. off-state voltage: 128V
Breakdown voltage: 150V
Peak pulse power dissipation: 0.6kW
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+31.63 грн
18+23.50 грн
25+19.64 грн
100+14.27 грн
Мінімальне замовлення: 15
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TSM2305CX RFG TSM2305_E15.pdf
TSM2305CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: tape
Kind of channel: enhancement
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GBU1006 description GBU10005-GBU1010%20N1770%20REV.A.pdf ds30052.pdf GBU1001 SERIES_M2103.pdf 54-GBU10005-GBU1010(GBU).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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SS14 ss19-d.pdf pdf.php?pn=SS14 %5BLumimax%5DSS12~SS100.pdf 5399_SS14%20SMA.PDF
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.4V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 54 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.46 грн
42+10.16 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
TS2596SCS RLG TS2596SCS_C1602.pdf
TS2596SCS RLG
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 1.23÷19.5VDC; 2A; SOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 1.23...19.5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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TS2596CM533 RNG TS2596_G1608.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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SK86C SK86C00000S060.pdf SK82C SERIES_L2102.pdf
SK86C
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. forward voltage: 0.75V
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+52.42 грн
13+32.56 грн
20+29.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P4SMA36A M2G P4SMA15A-M2G.pdf
P4SMA36A M2G
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 189 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+16.81 грн
40+10.49 грн
100+9.23 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
1N4007G 1n4001-d.pdf 1N4001G-1N4007G%20N0544%20REV.A.pdf 1N4001G SERIES_P2104.pdf
1N4007G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1V
Capacitance: 10pF
Features of semiconductor devices: glass passivated
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.88 грн
31+13.93 грн
37+11.50 грн
100+5.53 грн
Мінімальне замовлення: 23
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1.5SMC30CA littelfuse_tvs_diode_1_5smc_datasheet.pdf?assetguid=4699ae45-ea3d-42d5-90f2-b76a7b7f12c3 1.5SMC.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.5V; 38A; bidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Mounting: SMD
Case: DO214AB; SMC
Semiconductor structure: bidirectional
Manufacturer series: 1.5SMC
Max. forward impulse current: 38A
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Peak pulse power dissipation: 1.5kW
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SMAJ28A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMCJ28CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMAJ33A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf
SMAJ33A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 7499 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.31 грн
28+15.53 грн
100+8.86 грн
500+6.24 грн
1000+5.48 грн
2000+4.88 грн
5000+4.26 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SK56C SK52C SERIES_S2311.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
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P4KE30A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 p4ke68.pdf P4KE%20SERIES%20N0220%20REV.B.pdf P4KE SERIES_N2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 28.5V; 10A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5V
Max. forward impulse current: 10A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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