Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36397) > Сторінка 11 з 607
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VS-SD823C12S30C | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.2KV 910A B-43Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 910A Supplier Device Package: B-43, Hockey PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 1200 V |
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VS-SD823C20S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 810A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 810A Supplier Device Package: B-43, Hockey PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2000 V |
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VS-SD823C25S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2.5KV 810A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 810A Supplier Device Package: B-43, Hockey PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
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VS-SD823C25S30C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2.5KV 910A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 910A Supplier Device Package: B-43, Hockey PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
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HFA105NH60R | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 105A HALFPAK |
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VS-SD1553C25S30K | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.5KV 1650A DO200AC Packaging: Bulk Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 1650A Supplier Device Package: DO-200AC, K-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4000 A Current - Reverse Leakage @ Vr: 75 mA @ 2500 V |
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VS-SD853C45S50K | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 4.5KV 990A DO200AC Packaging: Bulk Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 990A Supplier Device Package: DO-200AC, K-PUK Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 2000 A Current - Reverse Leakage @ Vr: 100 mA @ 4500 V |
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VSKCL240-06S10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V 250A MAGNAPAK |
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VSKCL240-10S10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1KV 250A MAGN-A-PAK |
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VSKDL240-06S10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V 250A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
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VSKDL240-10S10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1KV 250A MAGN-A-PAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 1000 V |
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VSKDL240-12S20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 1200V 250A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 1200 V |
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VSKDL240-14S20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.4KV 250A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 1400 V |
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VSKDL240-20S30 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 2KV 240A MAGN-A-PAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 240A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 2000 V |
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VSKDL240-25S30 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 2500V 240A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 240A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
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VSKDL450-16S20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 1600V 460A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 460A Supplier Device Package: MAGN-A-PAK® Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1800 A Current - Reverse Leakage @ Vr: 50 mA @ 1600 V |
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10ETF02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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10ETF10 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1KV 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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10ETF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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10ETS12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220AC |
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20ETF02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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20ETF04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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20ETF06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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20ETF08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
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20ETF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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20ETF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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| 10ETS08FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 10A TO220FP |
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| 10ETS12FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220FP |
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20ETF04FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AB Full-Pak Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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| 20ETF06FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 20A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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| 20ETS08FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 20A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
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| 20ETS12FP | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 20A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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30CPF04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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30CPF06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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30CPF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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30CPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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30EPF02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 30A TO247AC |
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30EPF04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 30A TO247AC |
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30EPF06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 600V 30A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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30EPF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 30A TO247AC |
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30EPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 30A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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40EPF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 40A TO247AC |
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40EPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 40A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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60CPF04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 60A TO247AC |
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60CPF06 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 60A TO247AC |
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60CPF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 60A TO247AC |
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60CPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 60A TO247AC |
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60EPF02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 60A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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60EPF04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 60A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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60EPF10 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1KV 60A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
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60EPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 60A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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80EPF02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 80A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: TO-247AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 80 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товар відсутній |
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1N3085 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 150A DO205AC |
товар відсутній |
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| IRKC56/08A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 800V 60A ADD-A-PAK |
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| IRKC56/10A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1KV 60A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 10 mA @ 1000 V |
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| IRKC91/04A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 400V 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 10 mA @ 400 V |
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| IRKC91/06A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 10 mA @ 600 V |
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| IRKC91/08A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 800V 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
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| IRKC91/10A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1KV 100A ADD-A-PAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 10 mA @ 1000 V |
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| IRKC91/14A | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.4KV 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 1400 V Current - Reverse Leakage @ Vr: 10 mA @ 1400 V |
товар відсутній |
| VS-SD823C12S30C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
| VS-SD823C20S20C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 810A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 810A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
Description: DIODE GEN PURP 2KV 810A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 810A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
товар відсутній
| VS-SD823C25S20C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2.5KV 810A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 810A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE GEN PURP 2.5KV 810A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 810A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
товар відсутній
| VS-SD823C25S30C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2.5KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE GEN PURP 2.5KV 910A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 910A
Supplier Device Package: B-43, Hockey PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
товар відсутній
| HFA105NH60R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 105A HALFPAK
Description: DIODE GEN PURP 600V 105A HALFPAK
товар відсутній
| VS-SD1553C25S30K |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 1650A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1650A
Supplier Device Package: DO-200AC, K-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4000 A
Current - Reverse Leakage @ Vr: 75 mA @ 2500 V
Description: DIODE GP 2.5KV 1650A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1650A
Supplier Device Package: DO-200AC, K-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 4000 A
Current - Reverse Leakage @ Vr: 75 mA @ 2500 V
товар відсутній
| VS-SD853C45S50K |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 4.5KV 990A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 990A
Supplier Device Package: DO-200AC, K-PUK
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 2000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
Description: DIODE GP 4.5KV 990A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 990A
Supplier Device Package: DO-200AC, K-PUK
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 2000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
товар відсутній
| VSKCL240-06S10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V 250A MAGNAPAK
Description: DIODE MODULE 600V 250A MAGNAPAK
товар відсутній
| VSKCL240-10S10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1KV 250A MAGN-A-PAK
Description: DIODE MODULE 1KV 250A MAGN-A-PAK
товар відсутній
| VSKDL240-06S10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE MODULE 600V 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
товар відсутній
| VSKDL240-10S10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1KV 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1000 V
Description: DIODE MODULE 1KV 250A MAGN-A-PAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1000 V
товар відсутній
| VSKDL240-12S20 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Description: DIODE MOD GP 1200V 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
| VSKDL240-14S20 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.4KV 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Description: DIODE MODULE 1.4KV 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.57 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
товар відсутній
| VSKDL240-20S30 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 2KV 240A MAGN-A-PAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 240A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
Description: DIODE MODULE 2KV 240A MAGN-A-PAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 240A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
товар відсутній
| VSKDL240-25S30 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 2500V 240A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 240A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE MOD GP 2500V 240A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 240A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
товар відсутній
| VSKDL450-16S20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1600V 460A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 460A
Supplier Device Package: MAGN-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Description: DIODE MOD GP 1600V 460A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 460A
Supplier Device Package: MAGN-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
товар відсутній
| 10ETF02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
| 10ETF10 | |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
| 10ETF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 10ETS12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220AC
Description: DIODE GEN PURP 1.2KV 10A TO220AC
товар відсутній
| 20ETF02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
| 20ETF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
| 20ETF06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| 20ETF08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товар відсутній
| 20ETF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
| 20ETF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 10ETS08FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 10A TO220FP
Description: DIODE GEN PURP 800V 10A TO220FP
товар відсутній
| 10ETS12FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO220FP
Description: DIODE GEN PURP 1.2KV 10A TO220FP
товар відсутній
| 20ETF04FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
| 20ETF06FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GP 600V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| 20ETS08FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GP 800V 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товар відсутній
| 20ETS12FP |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 20A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 30CPF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
| 30CPF06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| 30CPF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
| 30CPF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 30EPF02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 30A TO247AC
Description: DIODE GEN PURP 200V 30A TO247AC
товар відсутній
| 30EPF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A TO247AC
Description: DIODE GEN PURP 400V 30A TO247AC
товар відсутній
| 30EPF06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
| 30EPF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 30A TO247AC
Description: DIODE GEN PURP 1KV 30A TO247AC
товар відсутній
| 30EPF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 40EPF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 40A TO247AC
Description: DIODE GEN PURP 1KV 40A TO247AC
товар відсутній
| 40EPF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GP 1.2KV 40A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
| 60CPF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 60A TO247AC
Description: DIODE GEN PURP 400V 60A TO247AC
товар відсутній
| 60CPF06 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AC
Description: DIODE GEN PURP 600V 60A TO247AC
товар відсутній
| 60CPF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 60A TO247AC
Description: DIODE GEN PURP 1KV 60A TO247AC
товар відсутній
| 60CPF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Description: DIODE GEN PURP 1.2KV 60A TO247AC
товар відсутній
| 60EPF02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GP 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
| 60EPF04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
| 60EPF10 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GP 1KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
| 60EPF12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
| 80EPF02 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
| 1N3085 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150A DO205AC
Description: DIODE GEN PURP 100V 150A DO205AC
товар відсутній
| IRKC56/08A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 800V 60A ADD-A-PAK
Description: DIODE MODULE 800V 60A ADD-A-PAK
товар відсутній
| IRKC56/10A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1KV 60A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Description: DIODE MODULE GP 1KV 60A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
товар відсутній
| IRKC91/04A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 mA @ 400 V
Description: DIODE MODULE 400V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 10 mA @ 400 V
товар відсутній
| IRKC91/06A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 mA @ 600 V
Description: DIODE MODULE 600V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 mA @ 600 V
товар відсутній
| IRKC91/08A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 800V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE 800V 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
товар відсутній
| IRKC91/10A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Description: DIODE MODULE 1KV 100A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
товар відсутній
| IRKC91/14A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.4KV 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
Description: DIODE MODULE 1.4KV 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 1400 V
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
товар відсутній