Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (38105) > Сторінка 10 з 636
Фото | Назва | Виробник | Інформація |
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VS-T70HFL40S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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VS-T70HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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VS-T70HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-T70HFL80S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
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VS-T85HFL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 85A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 20 mA @ 1000 V |
на замовлення 398 шт: термін постачання 21-31 дні (днів) |
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VS-T85HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-T85HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
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VS-12FL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 12A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-12FL80S05 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 12A DO203AA |
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VS-16FL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 16A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 1000 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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VS-16FL10S02 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 16A DO203AA |
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VS-16FL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-16FL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-1N3879 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 50 V |
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VS-1N3880 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
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VS-1N3881 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 200 V |
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VS-1N3882 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 300V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 300 V |
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VS-1N3883 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 15 µA @ 400 V |
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VS-1N3889 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 12A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
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VS-6FL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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VS-6FL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 6A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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30HFU-100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 30A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 35 µA @ 100 V |
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30HFU-200 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 30A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 35 µA @ 200 V |
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30HFU-400 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 30A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 35 µA @ 400 V |
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30HFU-600 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 30A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 35 µA @ 600 V |
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VS-40HFL20S02 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 40A DO203AB |
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VS-40HFL20S05 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 40A DO203AB |
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VS-40HFL40S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 40A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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VS-40HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 40A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-70HFL10S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
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VS-70HFL10S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
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VS-70HFL20S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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VS-70HFL20S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
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VS-70HFL40S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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VS-70HFL40S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
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VS-70HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-70HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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VS-70HFL80S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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VS-85HFL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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VS-85HFL20S02 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 85A DO203AB |
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VS-85HFL20S05 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 85A DO203AB |
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VS-85HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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VS-85HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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VSD3913 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 30A DO203AB |
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VS-SD400N20PC | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 400A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -40°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A Current - Reverse Leakage @ Vr: 15 mA @ 2000 V |
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VS-SD400N24PC | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.4KV 400A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -40°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A Current - Reverse Leakage @ Vr: 15 mA @ 2400 V |
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8EWF10S | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 8A DPAK |
товар відсутній |
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8EWF12S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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VS-SD603C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 400 V |
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VS-SD603C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 800 V |
товар відсутній |
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VS-SD603C10S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 1000 V |
товар відсутній |
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VS-SD603C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 1200 V |
товар відсутній |
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VS-SD603C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 1400 V |
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VS-SD603C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 600A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 600A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A Current - Reverse Leakage @ Vr: 45 mA @ 1600 V |
товар відсутній |
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VS-SD803C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 400 V |
товар відсутній |
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VS-SD803C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 800 V |
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VS-SD803C10S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 1000 V |
товар відсутній |
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VS-SD803C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 1200 V |
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VS-SD803C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 1400 V |
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VS-SD803C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 845A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 845A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A Current - Reverse Leakage @ Vr: 45 mA @ 1600 V |
товар відсутній |
VS-T70HFL40S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-T70HFL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2210.36 грн |
10+ | 1891.93 грн |
100+ | 1654.69 грн |
VS-T70HFL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-T70HFL80S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товар відсутній
VS-T85HFL100S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 20 mA @ 1000 V
Description: DIODE GEN PURP 1KV 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 20 mA @ 1000 V
на замовлення 398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3205.69 грн |
10+ | 2750.86 грн |
100+ | 2414.55 грн |
VS-T85HFL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3113.43 грн |
10+ | 2671.2 грн |
VS-T85HFL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
товар відсутній
VS-12FL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-12FL80S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 12A DO203AA
Description: DIODE GEN PURP 800V 12A DO203AA
товар відсутній
VS-16FL100S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Description: DIODE GEN PURP 1KV 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 734.96 грн |
10+ | 606.85 грн |
VS-16FL10S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A DO203AA
Description: DIODE GEN PURP 100V 16A DO203AA
товар відсутній
VS-16FL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-16FL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-1N3879 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
Description: DIODE GEN PURP 50V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
товар відсутній
VS-1N3880 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE GEN PURP 100V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
товар відсутній
VS-1N3881 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Description: DIODE GEN PURP 200V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
VS-1N3882 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 300 V
Description: DIODE GEN PURP 300V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 300 V
товар відсутній
VS-1N3883 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Description: DIODE GEN PURP 400V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
товар відсутній
VS-1N3889 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товар відсутній
VS-6FL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-6FL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
30HFU-100 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 100 V
Description: DIODE GEN PURP 100V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 100 V
товар відсутній
30HFU-200 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 200 V
Description: DIODE GEN PURP 200V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 200 V
товар відсутній
30HFU-400 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 400 V
Description: DIODE GEN PURP 400V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 400 V
товар відсутній
30HFU-600 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 35 µA @ 600 V
товар відсутній
VS-40HFL20S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A DO203AB
Description: DIODE GEN PURP 200V 40A DO203AB
товар відсутній
VS-40HFL20S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A DO203AB
Description: DIODE GEN PURP 200V 40A DO203AB
товар відсутній
VS-40HFL40S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-40HFL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-70HFL10S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
VS-70HFL10S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
VS-70HFL20S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-70HFL20S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-70HFL40S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-70HFL40S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-70HFL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-70HFL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-70HFL80S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 219.8 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 734.96 грн |
10+ | 623.57 грн |
VS-85HFL100S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1352.64 грн |
10+ | 1147.14 грн |
100+ | 992.13 грн |
VS-85HFL20S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 85A DO203AB
Description: DIODE GEN PURP 200V 85A DO203AB
товар відсутній
VS-85HFL20S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 85A DO203AB
Description: DIODE GEN PURP 200V 85A DO203AB
товар відсутній
VS-85HFL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1260.38 грн |
10+ | 1068.99 грн |
VS-85HFL60S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 266.9 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1332.32 грн |
10+ | 1130.2 грн |
VSD3913 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A DO203AB
Description: DIODE GEN PURP 400V 30A DO203AB
товар відсутній
VS-SD400N20PC |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 400A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A
Current - Reverse Leakage @ Vr: 15 mA @ 2000 V
Description: DIODE GEN PURP 2KV 400A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A
Current - Reverse Leakage @ Vr: 15 mA @ 2000 V
товар відсутній
VS-SD400N24PC |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.4KV 400A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A
Current - Reverse Leakage @ Vr: 15 mA @ 2400 V
Description: DIODE GP 2.4KV 400A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.62 V @ 1500 A
Current - Reverse Leakage @ Vr: 15 mA @ 2400 V
товар відсутній
8EWF10S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
Description: DIODE GEN PURP 1KV 8A DPAK
товар відсутній
8EWF12S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-SD603C04S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 400 V
Description: DIODE GEN PURP 400V 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 400 V
товар відсутній
VS-SD603C08S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 800 V
Description: DIODE GEN PURP 800V 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 800 V
товар відсутній
VS-SD603C10S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1000 V
Description: DIODE GEN PURP 1KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1000 V
товар відсутній
VS-SD603C12S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1200 V
товар відсутній
VS-SD603C14S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1400 V
Description: DIODE GEN PURP 1.4KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1400 V
товар відсутній
VS-SD603C16S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 600A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.97 V @ 1885 A
Current - Reverse Leakage @ Vr: 45 mA @ 1600 V
товар відсутній
VS-SD803C04S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 400 V
Description: DIODE GEN PURP 400V 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 400 V
товар відсутній
VS-SD803C08S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 800 V
Description: DIODE GEN PURP 800V 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 800 V
товар відсутній
VS-SD803C10S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1000 V
Description: DIODE GEN PURP 1KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1000 V
товар відсутній
VS-SD803C12S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1200 V
товар відсутній
VS-SD803C14S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1400 V
Description: DIODE GEN PURP 1.4KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1400 V
товар відсутній
VS-SD803C16S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 845A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 845A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.89 V @ 2655 A
Current - Reverse Leakage @ Vr: 45 mA @ 1600 V
товар відсутній