Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36396) > Сторінка 14 з 607
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HFA08TB120S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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HFA15TB60S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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HFA16TA60CS | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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HFA25TB60S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 25A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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HFA30TA60CS | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 15A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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MURB1520 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 15A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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HFA80NC40C | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY GP 400V 85A D618 |
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HFA70NC60C | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY GP 600V 56A D618 |
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HFA105NH60 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 105A HALFPAK |
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HFA180NH40 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 180A D-67 |
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HFA08TA60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A (DC) Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
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MUR1020CT | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 990 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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MUR1520 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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HFA100MD60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 83A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 83A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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HFA100MD60D | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 83A TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 83A (DC) Supplier Device Package: TO-244AB (Isolated) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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HFA120MD40C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 111A TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 111A (DC) Supplier Device Package: TO-244AB (Isolated) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A Current - Reverse Leakage @ Vr: 6 µA @ 400 V |
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HFA140MD60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V 99A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 99A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
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HFA140MD60D | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V 99A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 99A (DC) Supplier Device Package: TO-244AB Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
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HFA140NJ60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 126A TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 126A (DC) Supplier Device Package: TO-244AB (Isolated) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 70 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
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HFA160MD40C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 142A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 142A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 80 A Current - Reverse Leakage @ Vr: 9 µA @ 400 V |
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HFA160NJ40C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 170A TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 170A (DC) Supplier Device Package: TO-244AB (Isolated) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A Current - Reverse Leakage @ Vr: 6 µA @ 400 V |
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HFA180MD60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 600V TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Supplier Device Package: TO-244AB Voltage - DC Reverse (Vr) (Max): 600 V |
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HFA180MD60D | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Supplier Device Package: TO-244AB (Isolated) Voltage - DC Reverse (Vr) (Max): 600 V |
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HFA200MD40C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 172A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 172A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A Current - Reverse Leakage @ Vr: 12 µA @ 400 V |
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HFA200MD40D | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 400V 172A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 172A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A Current - Reverse Leakage @ Vr: 12 µA @ 400 V |
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HFA210NJ60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 600V 171A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 171A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 105 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
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HFA240NJ40C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 400V 244A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 244A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A Current - Reverse Leakage @ Vr: 9 µA @ 400 V |
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HFA240NJ40D | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 400V 244A TO244AB Packaging: Bulk Package / Case: TO-244AB Isolated Tab Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 244A (DC) Supplier Device Package: TO-244AB (Isolated) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A Current - Reverse Leakage @ Vr: 9 µA @ 400 V |
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HFA280NJ60C | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 600V 222A TO244AB Packaging: Bulk Package / Case: TO-244AB Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 222A (DC) Supplier Device Package: TO-244AB Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 140 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
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HFA320NJ40C | Vishay General Semiconductor - Diodes Division | Description: DIODE MODULE 400V 321A TO244AB |
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HFA08PB120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 8A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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HFA30PB120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 30A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
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HFA16PA120C | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 1200V 8A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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HFA32PA120C | Vishay General Semiconductor - Diodes Division | Description: DIODE ARRAY GP 1200V 16A TO247AC |
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MUR3020WT | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 15A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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CPV362M4K | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 600V 5.7A 23W IMS-2 |
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CPV362M4U | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 600V 7.2A 23W IMS-2 |
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CPV363M4F | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 600V 16A 36W IMS-2 |
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CPV363M4K | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 600V 11A 36W IMS-2 |
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CPV363M4U | Vishay General Semiconductor - Diodes Division | Description: IGBT MODULE 600V 13A 36W IMS-2 |
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CPV364M4F | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 27A 63W IMS-2 Package / Case: 19-SIP (13 Leads), IMS-2 Mounting Type: Through Hole Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A NTC Thermistor: No Supplier Device Package: IMS-2 Part Status: Obsolete Current - Collector (Ic) (Max): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 63 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 30 V |
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VS-CPV364M4KPBF | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 24A 63W IMS-2 Packaging: Bulk Package / Case: 19-SIP (13 Leads), IMS-2 Mounting Type: Through Hole Input: Standard Configuration: Three Phase Inverter Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A NTC Thermistor: No Supplier Device Package: IMS-2 Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 63 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.6 nF @ 30 V |
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CPV364M4U | Vishay General Semiconductor - Diodes Division |
Description: IGBT MODULE 600V 20A 63W IMS-2 Packaging: Bulk Package / Case: 19-SIP (13 Leads), IMS-2 Mounting Type: Through Hole Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A NTC Thermistor: No Supplier Device Package: IMS-2 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 63 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V |
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20CTQ035S | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 35V D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
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6TQ035S | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 6A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A Current - Reverse Leakage @ Vr: 800 µA @ 35 V |
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6TQ045S | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 6A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A Current - Reverse Leakage @ Vr: 800 µA @ 45 V |
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MBRB1045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
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MBRB2035CT | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 35V D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
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MURB2020CT | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 200V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A Current - Reverse Leakage @ Vr: 15 µA @ 200 V |
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122NQ030R | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 30V 120A D-67 |
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180NQ035 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 180A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Current - Average Rectified (Io): 180A Supplier Device Package: D-67 HALF-PAK Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A Current - Reverse Leakage @ Vr: 15 mA @ 35 V |
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180NQ045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 180A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Current - Average Rectified (Io): 180A Supplier Device Package: D-67 HALF-PAK Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A Current - Reverse Leakage @ Vr: 15 mA @ 45 V |
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180NQ045R | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 180A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Current - Average Rectified (Io): 180A Supplier Device Package: D-67 HALF-PAK Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A Current - Reverse Leakage @ Vr: 15 mA @ 45 V |
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182NQ030 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 180A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Current - Average Rectified (Io): 180A Supplier Device Package: D-67 HALF-PAK Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 180 A Current - Reverse Leakage @ Vr: 15 mA @ 30 V |
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183NQ100R | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 100V 180A D-67 |
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241NQ045 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 240A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 10300pF @ 5V, 1MHz Current - Average Rectified (Io): 240A Supplier Device Package: D-67 HALF-PAK Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 240 A Current - Reverse Leakage @ Vr: 20 mA @ 45 V |
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243NQ080 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 80V 240A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 5500pF @ 5V, 1MHz Current - Average Rectified (Io): 240A Supplier Device Package: D-67 HALF-PAK Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A Current - Reverse Leakage @ Vr: 6 mA @ 80 V |
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243NQ100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 240A D-67 Packaging: Bulk Package / Case: D-67 HALF-PAK Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 5500pF @ 5V, 1MHz Current - Average Rectified (Io): 240A Supplier Device Package: D-67 HALF-PAK Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A Current - Reverse Leakage @ Vr: 6 mA @ 100 V |
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VS-90SQ035 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 9A DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 9A Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V |
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VS-70HF140 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.4KV 70A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 220 A Current - Reverse Leakage @ Vr: 4.5 mA @ 1400 V |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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HFA08TB120S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
HFA15TB60S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
HFA16TA60CS |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE ARRAY GP 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
HFA25TB60S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE GEN PURP 600V 25A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
HFA30TA60CS |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
MURB1520 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HFA80NC40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 400V 85A D618
Description: DIODE ARRAY GP 400V 85A D618
товар відсутній
HFA70NC60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 56A D618
Description: DIODE ARRAY GP 600V 56A D618
товар відсутній
HFA105NH60 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 105A HALFPAK
Description: DIODE GEN PURP 600V 105A HALFPAK
товар відсутній
HFA180NH40 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 180A D-67
Description: DIODE GEN PURP 400V 180A D-67
товар відсутній
HFA08TA60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
MUR1020CT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
MUR1520 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HFA100MD60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 83A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 83A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE MODULE GP 600V 83A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 83A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
HFA100MD60D |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 83A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 83A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE MODULE GP 600V 83A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 83A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
HFA120MD40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 111A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 111A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 6 µA @ 400 V
Description: DIODE MOD GP 400V 111A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 111A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 6 µA @ 400 V
товар відсутній
HFA140MD60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 99A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 99A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE MODULE GP 600V 99A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 99A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
HFA140MD60D |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V 99A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 99A (DC)
Supplier Device Package: TO-244AB
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE MODULE 600V 99A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 99A (DC)
Supplier Device Package: TO-244AB
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 70 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
товар відсутній
HFA140NJ60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 126A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 126A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 70 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE MOD GP 600V 126A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 126A (DC)
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 70 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товар відсутній
HFA160MD40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 142A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 142A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 80 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
Description: DIODE MOD GP 400V 142A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 142A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 80 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
товар відсутній
HFA160NJ40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 170A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 170A (DC)
Supplier Device Package: TO-244AB (Isolated)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 6 µA @ 400 V
Description: DIODE MOD GP 400V 170A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 170A (DC)
Supplier Device Package: TO-244AB (Isolated)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 6 µA @ 400 V
товар відсутній
HFA180MD60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-244AB
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE MODULE GP 600V TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-244AB
Voltage - DC Reverse (Vr) (Max): 600 V
товар відсутній
HFA180MD60D |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE MODULE 600V TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-244AB (Isolated)
Voltage - DC Reverse (Vr) (Max): 600 V
товар відсутній
HFA200MD40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 172A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 172A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A
Current - Reverse Leakage @ Vr: 12 µA @ 400 V
Description: DIODE MOD GP 400V 172A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 172A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A
Current - Reverse Leakage @ Vr: 12 µA @ 400 V
товар відсутній
HFA200MD40D |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 400V 172A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 172A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A
Current - Reverse Leakage @ Vr: 12 µA @ 400 V
Description: DIODE MOD GP 400V 172A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 172A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 A
Current - Reverse Leakage @ Vr: 12 µA @ 400 V
товар відсутній
HFA210NJ60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 171A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 105 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE MOD GP 600V 171A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 105 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
товар відсутній
HFA240NJ40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 244A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 244A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
Description: DIODE MODULE 400V 244A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 244A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
товар відсутній
HFA240NJ40D |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 244A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 244A (DC)
Supplier Device Package: TO-244AB (Isolated)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
Description: DIODE MODULE 400V 244A TO244AB
Packaging: Bulk
Package / Case: TO-244AB Isolated Tab
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 244A (DC)
Supplier Device Package: TO-244AB (Isolated)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 240 A
Current - Reverse Leakage @ Vr: 9 µA @ 400 V
товар відсутній
HFA280NJ60C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 600V 222A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 222A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 140 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Description: DIODE MODULE 600V 222A TO244AB
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 222A (DC)
Supplier Device Package: TO-244AB
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 140 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
товар відсутній
HFA320NJ40C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 321A TO244AB
Description: DIODE MODULE 400V 321A TO244AB
товар відсутній
HFA08PB120 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 8A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GP 1.2KV 8A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
HFA30PB120 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Description: DIODE GP 1.2KV 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
HFA16PA120C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 8A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
HFA32PA120C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 16A TO247AC
Description: DIODE ARRAY GP 1200V 16A TO247AC
товар відсутній
MUR3020WT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
CPV362M4K |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 5.7A 23W IMS-2
Description: IGBT MODULE 600V 5.7A 23W IMS-2
товар відсутній
CPV362M4U |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 7.2A 23W IMS-2
Description: IGBT MODULE 600V 7.2A 23W IMS-2
товар відсутній
CPV363M4F |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 16A 36W IMS-2
Description: IGBT MODULE 600V 16A 36W IMS-2
товар відсутній
CPV363M4K |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 11A 36W IMS-2
Description: IGBT MODULE 600V 11A 36W IMS-2
товар відсутній
CPV363M4U |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 13A 36W IMS-2
Description: IGBT MODULE 600V 13A 36W IMS-2
товар відсутній
CPV364M4F |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 27A 63W IMS-2
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Obsolete
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 30 V
Description: IGBT MODULE 600V 27A 63W IMS-2
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Obsolete
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 30 V
товар відсутній
VS-CPV364M4KPBF |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 24A 63W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 30 V
Description: IGBT MODULE 600V 24A 63W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 30 V
товар відсутній
CPV364M4U |
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 600V 20A 63W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
Description: IGBT MODULE 600V 20A 63W IMS-2
Packaging: Bulk
Package / Case: 19-SIP (13 Leads), IMS-2
Mounting Type: Through Hole
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.84V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: IMS-2
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 63 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
товар відсутній
20CTQ035S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE ARRAY SCHOTTKY 35V D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
6TQ035S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Description: DIODE SCHOTTKY 35V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
товар відсутній
6TQ045S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Description: DIODE SCHOTTKY 45V 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
товар відсутній
MBRB1045 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
MBRB2035CT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE ARRAY SCHOTTKY 35V D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товар відсутній
MURB2020CT |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
122NQ030R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 120A D-67
Description: DIODE SCHOTTKY 30V 120A D-67
товар відсутній
180NQ035 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 35 V
Description: DIODE SCHOTTKY 35V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 35 V
товар відсутній
180NQ045 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 45 V
Description: DIODE SCHOTTKY 45V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 45 V
товар відсутній
180NQ045R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 45 V
Description: DIODE SCHOTTKY 45V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 45 V
товар відсутній
182NQ030 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 30 V
Description: DIODE SCHOTTKY 30V 180A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 180A
Supplier Device Package: D-67 HALF-PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 180 A
Current - Reverse Leakage @ Vr: 15 mA @ 30 V
товар відсутній
183NQ100R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 180A D-67
Description: DIODE SCHOTTKY 100V 180A D-67
товар відсутній
241NQ045 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 240 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
Description: DIODE SCHOTTKY 45V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 240 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
товар відсутній
243NQ080 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 5500pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A
Current - Reverse Leakage @ Vr: 6 mA @ 80 V
Description: DIODE SCHOTTKY 80V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 5500pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A
Current - Reverse Leakage @ Vr: 6 mA @ 80 V
товар відсутній
243NQ100 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 5500pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
Description: DIODE SCHOTTKY 100V 240A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 5500pF @ 5V, 1MHz
Current - Average Rectified (Io): 240A
Supplier Device Package: D-67 HALF-PAK
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 240 A
Current - Reverse Leakage @ Vr: 6 mA @ 100 V
товар відсутній
VS-90SQ035 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
товар відсутній
VS-70HF140 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.4KV 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 220 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1400 V
Description: DIODE GEN PURP 1.4KV 70A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 220 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1400 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 861.65 грн |
10+ | 730.91 грн |