Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36284) > Сторінка 13 з 605
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VS-25F20 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 25A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A Current - Reverse Leakage @ Vr: 12 mA @ 200 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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VS-25F40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 25A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A Current - Reverse Leakage @ Vr: 12 mA @ 400 V |
на замовлення 94 шт: термін постачання 21-31 дні (днів) |
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VS-25F80 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 25A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A Current - Reverse Leakage @ Vr: 12 mA @ 800 V |
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VS-85HF120 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A Current - Reverse Leakage @ Vr: 9 mA @ 1200 V |
на замовлення 193 шт: термін постачання 21-31 дні (днів) |
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VS-85HF160 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A Current - Reverse Leakage @ Vr: 4.5 mA @ 1600 V |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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VS-85HF20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 85A DO203AB |
на замовлення 78 шт: термін постачання 21-31 дні (днів) |
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VS-85HF60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A Current - Reverse Leakage @ Vr: 9 mA @ 600 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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VS-150KS20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 150A B-42 Packaging: Bulk Package / Case: B-42 Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A Current - Reverse Leakage @ Vr: 35 mA @ 200 V |
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VS-150KS40 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 150A B-42 Packaging: Bulk Package / Case: B-42 Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
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VS-150KS60 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 150A B-42 Packaging: Bulk Package / Case: B-42 Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 150A Supplier Device Package: B-42 Operating Temperature - Junction: -40°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A Current - Reverse Leakage @ Vr: 35 mA @ 600 V |
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VS-SD1100C04C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1400A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1400A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
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VS-SD1100C08C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1400A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1400A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
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VS-SD1100C12C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 1400A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1400A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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VS-SD1100C16C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 1400A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1400A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
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VS-SD1100C20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 1400A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1400A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 2000 V |
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VS-SD1100C25C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2.5KV 1100A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 2500 V |
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VS-SD1100C32C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 3.2KV 1100A B-43 Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1100A Supplier Device Package: B-43, Hockey PUK Voltage - DC Reverse (Vr) (Max): 3200 V Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A Current - Reverse Leakage @ Vr: 35 mA @ 3200 V |
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| 110MT120KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 110A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 110 A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
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| 130MT100KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1KV 130A MTK |
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| 130MT120KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.2KV 130A MTK |
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| 160MT120KB | Vishay General Semiconductor - Diodes Division |
 Description: BRIDGE RECT 3P 1.2KV 160A MTKPackaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 160 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
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| 160MT160KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 160A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 160 A Current - Reverse Leakage @ Vr: 10 mA @ 1600 V |
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| 60MT120KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.2KV 60A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 60 A |
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| 70MT100KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1KV 70A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 70 A |
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| 70MT120KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.2KV 70A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 70 A |
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| 70MT140KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.4KV 70A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.4 kV Current - Average Rectified (Io): 70 A |
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| 70MT160KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 70A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 70 A |
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| 90MT120KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 90 A |
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| 90MT160KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 1.6KV 90A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 90 A |
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| 90MT80KB | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3PHASE 800V 90A MTK Packaging: Bulk Package / Case: MTK Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MTK Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 90 A |
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| IRKD166/04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 400V 165A Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 165A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 20 mA @ 400 V |
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| IRKD166/08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 800V 165A Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 165A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 20 mA @ 800 V |
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| IRKD166/12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE GP 1.2KV 165A Packaging: Bulk Package / Case: INT-A-PAK (3) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 165A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 1200 V Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
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VS-SD1700C45K | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 4.5KV 1875A DO200AC Packaging: Bulk Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1875A Supplier Device Package: DO-200AC, K-PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 4500 V Voltage - Forward (Vf) (Max) @ If: 2.11 V @ 4000 A Current - Reverse Leakage @ Vr: 75 mA @ 4500 V |
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VS-SD3000C04K | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 400V 3800A DO200AC |
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VS-SD3000C10K | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 3800A DO200AC Packaging: Bulk Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3800A Supplier Device Package: DO-200AC, K-PUK Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 6000 A Current - Reverse Leakage @ Vr: 75 mA @ 1000 V |
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VSKD250-04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 400V 250A MAGNAPAK |
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VSKD250-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 800V 250A MAGNAPAK |
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VSKD250-12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.2KV 250A MAGNAPAK |
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VSKD250-16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.6KV 250A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Current - Reverse Leakage @ Vr: 50 mA @ 1600 V |
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VSKD250-20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 2KV 250A MAGN-A-PAK |
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VSKD270-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 800V 270A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 270A Supplier Device Package: MAGN-A-PAK® Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 50 mA @ 800 V |
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VSKD270-12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.2KV 270A MAGNAPAK |
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VSKD270-16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.6KV 270A MAGNAPAK |
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VSKD270-30 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 3KV 270A MAGN-A-PAK |
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VSKD320-04 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 400V 320A MAGNAPAK |
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VSKD320-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 800V 320A MAGNAPAK |
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VSKD320-12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.2KV 320A MAGNAPAK |
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VSKD320-16 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 1.6KV 320A MAGNAPAK |
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VSKD320-20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MODULE 2KV 320A MAGN-A-PAK |
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VSKE270-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 800V 270A MAGNAPAK |
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VSKD600-20 | Vishay General Semiconductor - Diodes Division |
Description: DIODE MOD GP 2000V 600A MAGNAPAK Packaging: Bulk Package / Case: 3-MAGN-A-PAK™ Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 600A Supplier Device Package: MAGN-A-PAK® Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 1800 A Current - Reverse Leakage @ Vr: 50 mA @ 2000 V |
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VS-60HFU-600 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 60A DO203AB Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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FA38SA50LC | Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 500V 38A SOT-227 |
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FA57SA50LC | Vishay General Semiconductor - Diodes Division | Description: MOSFET N-CH 500V 57A SOT-227 |
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MURB1520-1 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 15A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262-3 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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HFA06TB120S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 6A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
товар відсутній |
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HFA08TA60CS | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY GP 600V 4A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A (DC) Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товар відсутній |
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HFA08TB120S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
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HFA15TB60S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
| VS-25F20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
Description: DIODE GEN PURP 200V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.85 грн |
| 10+ | 292.59 грн |
| 100+ | 236.7 грн |
| VS-25F40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 400 V
Description: DIODE GEN PURP 400V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 400 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 371.09 грн |
| 10+ | 300.32 грн |
| VS-25F80 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
Description: DIODE GEN PURP 800V 25A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 78 A
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
товар відсутній
| VS-85HF120 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 964.7 грн |
| 10+ | 818.13 грн |
| 100+ | 707.56 грн |
| VS-85HF160 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1600 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1128.21 грн |
| 10+ | 957.45 грн |
| 100+ | 828.09 грн |
| VS-85HF20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 85A DO203AB
Description: DIODE GEN PURP 200V 85A DO203AB
на замовлення 78 шт:
термін постачання 21-31 дні (днів)| VS-85HF60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 600 V
Description: DIODE GEN PURP 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 600 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 811.14 грн |
| 10+ | 688.34 грн |
| VS-150KS20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
Description: DIODE GEN PURP 200V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 200 V
товар відсутній
| VS-150KS40 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
товар відсутній
| VS-150KS60 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 600 V
Description: DIODE GEN PURP 600V 150A B-42
Packaging: Bulk
Package / Case: B-42
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: B-42
Operating Temperature - Junction: -40°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 471 A
Current - Reverse Leakage @ Vr: 35 mA @ 600 V
товар відсутній
| VS-SD1100C04C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
товар відсутній
| VS-SD1100C08C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
товар відсутній
| VS-SD1100C12C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4990.55 грн |
| VS-SD1100C16C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
товар відсутній
| VS-SD1100C20C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
Description: DIODE GEN PURP 2KV 1400A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1400A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
товар відсутній
| VS-SD1100C25C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2.5KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
Description: DIODE GEN PURP 2.5KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
товар відсутній
| VS-SD1100C32C |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 3.2KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 3200 V
Description: DIODE GEN PURP 3.2KV 1100A B-43
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1100A
Supplier Device Package: B-43, Hockey PUK
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 1500 A
Current - Reverse Leakage @ Vr: 35 mA @ 3200 V
товар відсутній
| 110MT120KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 110A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: BRIDGE RECT 3P 1.2KV 110A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 110 A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
товар відсутній
| 130MT100KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1KV 130A MTK
Description: BRIDGE RECT 3PHASE 1KV 130A MTK
товар відсутній
| 130MT120KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 130A MTK
Description: BRIDGE RECT 3P 1.2KV 130A MTK
товар відсутній
| 160MT120KB | |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.2KV 160A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 160 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: BRIDGE RECT 3P 1.2KV 160A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 160 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
товар відсутній
| 160MT160KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 160A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 160A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 160 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
товар відсутній
| 60MT120KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.2KV 60A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Description: BRIDGE RECT 3PHASE 1.2KV 60A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
товар відсутній
| 70MT100KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 1KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 70 A
товар відсутній
| 70MT120KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.2KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 1.2KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 70 A
товар відсутній
| 70MT140KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.4KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 1.4KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.4 kV
Current - Average Rectified (Io): 70 A
товар відсутній
| 70MT160KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 70 A
Description: BRIDGE RECT 3PHASE 1.6KV 70A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 70 A
товар відсутній
| 90MT120KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 90 A
товар відсутній
| 90MT160KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.6KV 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3PHASE 1.6KV 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 90 A
товар відсутній
| 90MT80KB |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 90 A
Description: BRIDGE RECT 3PHASE 800V 90A MTK
Packaging: Bulk
Package / Case: MTK
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MTK
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 90 A
товар відсутній
| IRKD166/04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 400V 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
Description: DIODE MODULE GP 400V 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 20 mA @ 400 V
товар відсутній
| IRKD166/08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 800V 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Description: DIODE MODULE GP 800V 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
товар відсутній
| IRKD166/12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1.2KV 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 165A
Packaging: Bulk
Package / Case: INT-A-PAK (3)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
товар відсутній
| VS-SD1700C45K |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 4.5KV 1875A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1875A
Supplier Device Package: DO-200AC, K-PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.11 V @ 4000 A
Current - Reverse Leakage @ Vr: 75 mA @ 4500 V
Description: DIODE GP 4.5KV 1875A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1875A
Supplier Device Package: DO-200AC, K-PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.11 V @ 4000 A
Current - Reverse Leakage @ Vr: 75 mA @ 4500 V
товар відсутній
| VS-SD3000C04K |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 3800A DO200AC
Description: DIODE GP 400V 3800A DO200AC
товар відсутній
| VS-SD3000C10K |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 3800A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3800A
Supplier Device Package: DO-200AC, K-PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 6000 A
Current - Reverse Leakage @ Vr: 75 mA @ 1000 V
Description: DIODE GEN PURP 1KV 3800A DO200AC
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3800A
Supplier Device Package: DO-200AC, K-PUK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 6000 A
Current - Reverse Leakage @ Vr: 75 mA @ 1000 V
товар відсутній
| VSKD250-04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 250A MAGNAPAK
Description: DIODE MODULE 400V 250A MAGNAPAK
товар відсутній
| VSKD250-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 800V 250A MAGNAPAK
Description: DIODE MODULE 800V 250A MAGNAPAK
товар відсутній
| VSKD250-12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.2KV 250A MAGNAPAK
Description: DIODE MODULE 1.2KV 250A MAGNAPAK
товар відсутній
| VSKD250-16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.6KV 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Description: DIODE MODULE 1.6KV 250A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
товар відсутній
| VSKD250-20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 2KV 250A MAGN-A-PAK
Description: DIODE MODULE 2KV 250A MAGN-A-PAK
товар відсутній
| VSKD270-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 800V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 270A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
Description: DIODE MODULE 800V 270A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 270A
Supplier Device Package: MAGN-A-PAK®
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
| VSKD270-12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.2KV 270A MAGNAPAK
Description: DIODE MODULE 1.2KV 270A MAGNAPAK
товар відсутній
| VSKD270-16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.6KV 270A MAGNAPAK
Description: DIODE MODULE 1.6KV 270A MAGNAPAK
товар відсутній
| VSKD270-30 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 3KV 270A MAGN-A-PAK
Description: DIODE MODULE 3KV 270A MAGN-A-PAK
товар відсутній
| VSKD320-04 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 400V 320A MAGNAPAK
Description: DIODE MODULE 400V 320A MAGNAPAK
товар відсутній
| VSKD320-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 800V 320A MAGNAPAK
Description: DIODE MODULE 800V 320A MAGNAPAK
товар відсутній
| VSKD320-12 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.2KV 320A MAGNAPAK
Description: DIODE MODULE 1.2KV 320A MAGNAPAK
товар відсутній
| VSKD320-16 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 1.6KV 320A MAGNAPAK
Description: DIODE MODULE 1.6KV 320A MAGNAPAK
товар відсутній
| VSKD320-20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE 2KV 320A MAGN-A-PAK
Description: DIODE MODULE 2KV 320A MAGN-A-PAK
товар відсутній
| VSKE270-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 270A MAGNAPAK
Description: DIODE GP 800V 270A MAGNAPAK
товар відсутній
| VSKD600-20 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 2000V 600A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: MAGN-A-PAK®
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
Description: DIODE MOD GP 2000V 600A MAGNAPAK
Packaging: Bulk
Package / Case: 3-MAGN-A-PAK™
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: MAGN-A-PAK®
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 2000 V
товар відсутній
| VS-60HFU-600 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| FA38SA50LC |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 38A SOT-227
Description: MOSFET N-CH 500V 38A SOT-227
товар відсутній
| FA57SA50LC |
Виробник: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 500V 57A SOT-227
Description: MOSFET N-CH 500V 57A SOT-227
товар відсутній
| MURB1520-1 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| HFA06TB120S |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
| HFA08TA60CS |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товар відсутній
| HFA08TB120S |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товар відсутній
| HFA15TB60S |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній