Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40417) > Сторінка 9 з 674
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VS-GBPC3506A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 35A GBPC-APackaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3508A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 35A GBPC-APackaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 800 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3510A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 35A GBPC-APackaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1 V |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3512A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-APackaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB100 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB100R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A |
на замовлення 217 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB10R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 100V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.9 A |
на замовлення 476 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB20 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
на замовлення 1385 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB20R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 539 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
на замовлення 502 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB60R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 376 шт: термін постачання 21-31 дні (днів) |
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| VS-2KBB80 | Vishay General Semiconductor - Diodes Division |
Description: RECTIFIER BRIDGE 800V 1.9A D-37Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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VS-2KBB80R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 1.9A 2KBBPackaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 610 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP02 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2A D-44Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1016 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP04 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 2A D-44Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1051 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP06 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2A D-44Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2722 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP10 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 2A D-44Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 475 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC106 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3A KBPC1Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC110 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3A KBPC1Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 355 шт: термін постачання 21-31 дні (днів) |
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VS-SD303C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C10S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C20S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C25S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.5KV 350A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 430A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 430A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 430A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 430A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 430A DO200AAPackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD703C25S30L | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.5KV 790A DO200ABPackaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 790A Supplier Device Package: DO-200AB, B-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 20ETF04S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 20ETF10S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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20ETF06S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 20ETF08S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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20ETF12S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T40HFL20S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 40A D-55 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T40HFL20S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 40A D-55 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T40HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 40A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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VS-T70HFL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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T70HFL10S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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VS-T70HFL10S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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VS-T70HFL20S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-T70HFL40S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
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VS-T70HFL40S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T70HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 70A D55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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VS-T70HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T70HFL80S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 70A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T85HFL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 85A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 20 mA @ 1000 V |
на замовлення 383 шт: термін постачання 21-31 дні (днів) |
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VS-T85HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 85A D55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T85HFL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 85A D-55Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 20 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-12FL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 12A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-12FL80S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 12A DO203AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-16FL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 16A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 1000 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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VS-16FL10S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 16A DO203AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-16FL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
VS-16FL60S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 16A DO203AAPackaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| VS-GBPC3506A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 515.27 грн |
| 10+ | 309.51 грн |
| VS-GBPC3508A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 563.45 грн |
| 10+ | 385.23 грн |
| VS-GBPC3510A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 644.29 грн |
| 10+ | 424.63 грн |
| 100+ | 314.29 грн |
| VS-GBPC3512A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 643.48 грн |
| 10+ | 421.96 грн |
| 100+ | 322.76 грн |
| VS-2KBB100 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.89 грн |
| 10+ | 117.17 грн |
| 100+ | 94.24 грн |
| VS-2KBB100R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
на замовлення 217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 181.28 грн |
| 10+ | 112.21 грн |
| 100+ | 76.46 грн |
| VS-2KBB10R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
на замовлення 476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.95 грн |
| 10+ | 133.29 грн |
| 100+ | 91.68 грн |
| VS-2KBB20 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
на замовлення 1385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 172.30 грн |
| 10+ | 106.08 грн |
| 100+ | 72.04 грн |
| 500+ | 57.88 грн |
| 1000+ | 42.36 грн |
| VS-2KBB20R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.90 грн |
| 10+ | 107.10 грн |
| 100+ | 81.11 грн |
| 500+ | 61.02 грн |
| VS-2KBB40 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
на замовлення 502 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.63 грн |
| 10+ | 148.15 грн |
| 100+ | 102.47 грн |
| 500+ | 77.84 грн |
| VS-2KBB40R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.25 грн |
| 10+ | 128.96 грн |
| 100+ | 102.47 грн |
| VS-2KBB60R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 376 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 174.75 грн |
| 10+ | 107.34 грн |
| 100+ | 77.26 грн |
| VS-2KBB80 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
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| VS-2KBB80R |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 610 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.27 грн |
| 10+ | 117.72 грн |
| 100+ | 80.37 грн |
| 500+ | 69.32 грн |
| VS-2KBP02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.48 грн |
| 10+ | 105.84 грн |
| 100+ | 71.97 грн |
| 500+ | 59.25 грн |
| 1000+ | 57.13 грн |
| VS-2KBP04 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.12 грн |
| 10+ | 107.49 грн |
| 100+ | 73.48 грн |
| 500+ | 55.28 грн |
| 1000+ | 50.88 грн |
| VS-2KBP06 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2722 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.25 грн |
| 10+ | 92.55 грн |
| 100+ | 62.76 грн |
| 500+ | 53.86 грн |
| 1000+ | 36.61 грн |
| VS-2KBP10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.79 грн |
| 10+ | 96.96 грн |
| 100+ | 65.91 грн |
| VS-KBPC106 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 210.68 грн |
| 10+ | 131.79 грн |
| VS-KBPC110 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.32 грн |
| 10+ | 100.97 грн |
| 250+ | 68.48 грн |
| VS-SD303C04S10C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
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| VS-SD303C08S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
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| VS-SD303C10S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
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| VS-SD303C12S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
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| VS-SD303C14S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
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| VS-SD303C16S15C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
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| VS-SD303C20S20C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
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| VS-SD303C25S20C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
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| VS-SD403C04S10C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
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| VS-SD403C08S10C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-SD403C12S15C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-SD403C14S15C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-SD403C16S15C |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-SD703C25S30L |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
товару немає в наявності
В кошику
од. на суму грн.
| 20ETF04S |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 20ETF10S |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| 20ETF06S |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 20ETF08S |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| 20ETF12S |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T40HFL20S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
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В кошику
од. на суму грн.
| VS-T40HFL20S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
товару немає в наявності
В кошику
од. на суму грн.
| VS-T40HFL60S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T70HFL100S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| T70HFL10S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T70HFL10S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T70HFL20S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2392.62 грн |
| 10+ | 2124.88 грн |
| VS-T70HFL40S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T70HFL40S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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В кошику
од. на суму грн.
| VS-T70HFL60S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 70A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 70A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2368.12 грн |
| 10+ | 1673.28 грн |
| 100+ | 1439.12 грн |
| VS-T70HFL60S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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В кошику
од. на суму грн.
| VS-T70HFL80S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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В кошику
од. на суму грн.
| VS-T85HFL100S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 20 mA @ 1000 V
Description: DIODE GEN PURP 1KV 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 20 mA @ 1000 V
на замовлення 383 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3224.73 грн |
| 10+ | 2767.32 грн |
| 100+ | 2429.01 грн |
| VS-T85HFL60S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 85A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE STANDARD 600V 85A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-T85HFL60S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
Description: DIODE GEN PURP 600V 85A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 20 mA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-12FL60S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-12FL80S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 12A DO203AA
Description: DIODE GEN PURP 800V 12A DO203AA
товару немає в наявності
В кошику
од. на суму грн.
| VS-16FL100S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Description: DIODE GEN PURP 1KV 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 745.55 грн |
| 10+ | 515.92 грн |
| VS-16FL10S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 16A DO203AA
Description: DIODE GEN PURP 100V 16A DO203AA
товару немає в наявності
В кошику
од. на суму грн.
| VS-16FL60S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-16FL60S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 16A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.












