Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40248) > Сторінка 9 з 671
Фото | Назва | Виробник | Інформація |
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VS-36MB20A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2502A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V |
на замовлення 2911 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2504A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2506A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2508A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 800 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2510A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 1 V |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2512A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3502A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3504A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3506A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3508A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 800 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3510A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1 V |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC3512A | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB100 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB100R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A |
на замовлення 217 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB10R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.9 A |
на замовлення 476 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB20 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
на замовлення 1385 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB20R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 539 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
на замовлення 502 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB60R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 376 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB80 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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VS-2KBB80R | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 610 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP02 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1016 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP04 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 346 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP06 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2931 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP10 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 475 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC106 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC110 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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VS-SD303C04S10C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C08S10C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C10S10C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C12S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C14S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C16S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C20S20C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD303C25S20C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C04S10C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C08S10C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C12S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C14S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD403C16S15C | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-SD703C25S30L | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 790A Supplier Device Package: DO-200AB, B-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
20ETF04S | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
20ETF10S | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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20ETF06S | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
20ETF08S | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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20ETF12S | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T40HFL20S02 | Vishay General Semiconductor - Diodes Division |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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VS-T40HFL20S05 | Vishay General Semiconductor - Diodes Division |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T40HFL60S02 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL100S05 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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T70HFL10S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL10S05 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL20S02 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
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VS-T70HFL40S02 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL40S05 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL60S02 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
|
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VS-T70HFL60S05 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
VS-T70HFL80S05 | Vishay General Semiconductor - Diodes Division |
![]() Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. |
VS-36MB20A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 615.09 грн |
20+ | 507.72 грн |
VS-GBPC2502A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
Description: BRIDGE RECT 1P 200V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 2911 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 563.56 грн |
10+ | 326.87 грн |
100+ | 270.26 грн |
500+ | 217.13 грн |
VS-GBPC2504A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: BRIDGE RECT 1P 400V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 52 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 530.03 грн |
10+ | 360.90 грн |
25+ | 320.07 грн |
VS-GBPC2506A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: BRIDGE RECT 1P 600V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 84 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 570.10 грн |
10+ | 364.60 грн |
VS-GBPC2508A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
Description: BRIDGE RECT 1P 800V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 556.20 грн |
10+ | 364.68 грн |
VS-GBPC2510A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Description: BRIDGE RECT 1P 1KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 510.40 грн |
10+ | 421.31 грн |
25+ | 392.44 грн |
VS-GBPC2512A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
Description: BRIDGE RECT 1P 1.2KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 563.56 грн |
10+ | 384.69 грн |
25+ | 341.65 грн |
VS-GBPC3502A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
Description: BRIDGE RECT 1P 200V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 542.30 грн |
10+ | 370.59 грн |
VS-GBPC3504A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 584.83 грн |
10+ | 383.19 грн |
100+ | 281.39 грн |
VS-GBPC3506A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 508.76 грн |
10+ | 318.84 грн |
VS-GBPC3508A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 564.38 грн |
10+ | 385.87 грн |
VS-GBPC3510A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 492 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 641.27 грн |
10+ | 422.89 грн |
100+ | 312.97 грн |
VS-GBPC3512A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 644.54 грн |
10+ | 422.65 грн |
100+ | 323.29 грн |
VS-2KBB100 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.14 грн |
10+ | 117.36 грн |
100+ | 94.39 грн |
VS-2KBB100R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
на замовлення 217 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 181.58 грн |
10+ | 112.40 грн |
100+ | 76.58 грн |
VS-2KBB10R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
на замовлення 476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.30 грн |
10+ | 133.51 грн |
100+ | 91.83 грн |
VS-2KBB20 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
на замовлення 1385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 172.59 грн |
10+ | 106.25 грн |
100+ | 72.16 грн |
500+ | 57.97 грн |
1000+ | 42.43 грн |
VS-2KBB20R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 539 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 192.22 грн |
10+ | 107.28 грн |
100+ | 81.25 грн |
500+ | 61.12 грн |
VS-2KBB40 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
на замовлення 502 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 238.02 грн |
10+ | 148.39 грн |
100+ | 102.64 грн |
500+ | 77.97 грн |
VS-2KBB40R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 199.58 грн |
10+ | 129.17 грн |
100+ | 102.64 грн |
VS-2KBB60R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 376 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 175.04 грн |
10+ | 107.51 грн |
100+ | 77.39 грн |
VS-2KBB80 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
VS-2KBB80R |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 610 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 190.58 грн |
10+ | 117.91 грн |
100+ | 80.50 грн |
500+ | 69.44 грн |
VS-2KBP02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1016 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 171.77 грн |
10+ | 106.02 грн |
100+ | 72.09 грн |
500+ | 59.35 грн |
1000+ | 57.23 грн |
VS-2KBP04 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 185.67 грн |
10+ | 115.00 грн |
100+ | 78.60 грн |
VS-2KBP06 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 149.68 грн |
10+ | 92.15 грн |
100+ | 62.50 грн |
500+ | 53.57 грн |
1000+ | 39.67 грн |
VS-2KBP10 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 157.04 грн |
10+ | 97.12 грн |
100+ | 66.02 грн |
VS-KBPC106 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 234.75 грн |
10+ | 142.64 грн |
VS-KBPC110 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A KBPC1
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 167.68 грн |
10+ | 103.65 грн |
VS-SD303C04S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
VS-SD303C08S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
VS-SD303C10S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
VS-SD303C12S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
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VS-SD303C14S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
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VS-SD303C16S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
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VS-SD303C20S20C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
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VS-SD303C25S20C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
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VS-SD403C04S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
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VS-SD403C08S10C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
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VS-SD403C12S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
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VS-SD403C14S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
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VS-SD403C16S15C |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
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VS-SD703C25S30L |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
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20ETF04S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
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20ETF10S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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20ETF06S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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20ETF08S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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20ETF12S |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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VS-T40HFL20S02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
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VS-T40HFL20S05 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
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VS-T40HFL60S02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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VS-T70HFL100S05 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
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T70HFL10S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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VS-T70HFL10S05 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
VS-T70HFL20S02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2396.57 грн |
10+ | 2128.38 грн |
VS-T70HFL40S02 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
VS-T70HFL40S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
VS-T70HFL60S02 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 70A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 70A D55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2372.03 грн |
10+ | 1676.03 грн |
100+ | 1441.49 грн |
VS-T70HFL60S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
VS-T70HFL80S05 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.