Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (35966) > Сторінка 9 з 600
Фото | Назва | Виробник | Інформація |
Доступність |
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VS-KBPC806 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE 1-PH KBPC8-PB10 600V 150C Packaging: Bulk Package / Case: 4-Square, D-72 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-72 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC810 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE 1PH KBPC8-PB10 1000V 150C Packaging: Bulk Package / Case: 4-Square, D-72 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-72 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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VS-26MB05A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 25A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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VS-26MB100A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 25A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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VS-26MB140A | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 1.4KV 25A D-34 |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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VS-26MB160A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1.6KV 25A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
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VS-26MB20A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 25A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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VS-36MB05A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 35A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
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VS-36MB10A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 35A D-34 Packaging: Bulk Package / Case: 4-Square, D-34 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-34 Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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VS-36MB20A | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 200V 35A D-34 |
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VS-GBPC2502A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 200 V |
на замовлення 3978 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2504A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
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VS-GBPC2506A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
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VS-GBPC2508A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 800 V |
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VS-GBPC2510A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 1 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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VS-GBPC2512A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1.2KV 25A GBPC-A Packaging: Tray Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 25 A Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V |
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VS-GBPC3504A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 35A GBPC-A Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 400 V |
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VS-GBPC3506A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 35A GBPC-A Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 600 V |
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VS-GBPC3508A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 35A GBPC-A Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 800 V |
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VS-GBPC3510A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 35A GBPC-A Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1 V |
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VS-GBPC3512A | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A Packaging: Bulk Package / Case: 4-Square, GBPC-A Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-A Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 35 A Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V |
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VS-2KBB100 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 499 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB100R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.9 A |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB20 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
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VS-2KBB20R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 200V 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 408 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A |
на замовлення 214 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB40R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 508 шт: термін постачання 21-31 дні (днів) |
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VS-2KBB60R | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1P 600V 1.9A 2KBB |
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VS-2KBB80 | Vishay General Semiconductor - Diodes Division |
Description: RECTIFIER BRIDGE 800V 1.9A D-37 Packaging: Tube |
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VS-2KBB80R | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 1.9A 2KBB Packaging: Bulk Package / Case: 4-SIP, 2KBB Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 2KBB Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.9 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 308 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP02 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2A D-44 Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 797 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP04 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 2A D-44 Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP06 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 2A D-44 Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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VS-2KBP10 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 2A D-44 Packaging: Bulk Package / Case: 4-SIP, D-44 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D-44 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 460 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC106 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3A D-72 Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
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VS-KBPC110 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3A D-72 Packaging: Bulk Package / Case: 4-Square, KBPC-1 Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC1 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 421 шт: термін постачання 21-31 дні (днів) |
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VS-SD303C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
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VS-SD303C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
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VS-SD303C10S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1000 V |
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VS-SD303C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
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VS-SD303C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
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VS-SD303C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
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VS-SD303C20S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 2KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2000 V |
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VS-SD303C25S20C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.5KV 350A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 350A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A Current - Reverse Leakage @ Vr: 35 mA @ 2500 V |
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VS-SD403C04S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 430A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 400 V |
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VS-SD403C08S10C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 430A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 800 V |
товар відсутній |
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VS-SD403C12S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 430A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1200 V |
товар відсутній |
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VS-SD403C14S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.4KV 430A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1400 V |
товар відсутній |
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VS-SD403C16S15C | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.6KV 430A DO200AA Packaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 430A Supplier Device Package: DO-200AA, A-PUK Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A Current - Reverse Leakage @ Vr: 35 mA @ 1600 V |
товар відсутній |
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VS-SD703C25S30L | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 2.5KV 790A DO200AB Packaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 790A Supplier Device Package: DO-200AB, B-PUK Voltage - DC Reverse (Vr) (Max): 2500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A Current - Reverse Leakage @ Vr: 50 mA @ 2500 V |
товар відсутній |
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20ETF04S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
товар відсутній |
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20ETF10S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товар відсутній |
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20ETF06S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товар відсутній |
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20ETF08S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
товар відсутній |
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20ETF12S | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 20A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
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VS-T40HFL20S02 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 40A D-55 |
товар відсутній |
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VS-T40HFL20S05 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 40A D-55 |
товар відсутній |
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VS-T40HFL60S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 40A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 40A Supplier Device Package: D-55 Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товар відсутній |
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VS-T70HFL100S05 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товар відсутній |
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T70HFL10S02 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 70A D-55 Packaging: Bulk Package / Case: D-55 T-Module Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 70A Supplier Device Package: D-55 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товар відсутній |
VS-KBPC806 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1-PH KBPC8-PB10 600V 150C
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE 1-PH KBPC8-PB10 600V 150C
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 325.36 грн |
10+ | 263.43 грн |
VS-KBPC810 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE 1PH KBPC8-PB10 1000V 150C
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE 1PH KBPC8-PB10 1000V 150C
Packaging: Bulk
Package / Case: 4-Square, D-72
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-72
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 297.54 грн |
10+ | 240.96 грн |
VS-26MB05A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
VS-26MB100A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
VS-26MB140A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.4KV 25A D-34
Description: BRIDGE RECT 1P 1.4KV 25A D-34
на замовлення 218 шт:
термін постачання 21-31 дні (днів)VS-26MB160A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.6KV 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: BRIDGE RECT 1P 1.6KV 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
VS-26MB20A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 25A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 541.56 грн |
VS-36MB05A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: BRIDGE RECT 1PHASE 50V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товар відсутній
VS-36MB10A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 35A D-34
Packaging: Bulk
Package / Case: 4-Square, D-34
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-34
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 522.3 грн |
20+ | 431.39 грн |
VS-36MB20A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 35A D-34
Description: BRIDGE RECT 1PHASE 200V 35A D-34
товар відсутній
VS-GBPC2502A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
Description: BRIDGE RECT 1P 200V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 200 V
на замовлення 3978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 425.26 грн |
10+ | 350.76 грн |
25+ | 326.7 грн |
100+ | 274.31 грн |
300+ | 258.18 грн |
500+ | 242.04 грн |
1000+ | 214.27 грн |
2400+ | 200.77 грн |
VS-GBPC2504A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: BRIDGE RECT 1P 400V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
товар відсутній
VS-GBPC2506A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: BRIDGE RECT 1P 600V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
товар відсутній
VS-GBPC2508A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
Description: BRIDGE RECT 1P 800V 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
товар відсутній
VS-GBPC2510A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Description: BRIDGE RECT 1P 1KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 445.24 грн |
10+ | 387.79 грн |
25+ | 369.74 грн |
100+ | 301.29 грн |
VS-GBPC2512A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
Description: BRIDGE RECT 1P 1.2KV 25A GBPC-A
Packaging: Tray
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
товар відсутній
VS-GBPC3504A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Description: BRIDGE RECT 1P 400V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
товар відсутній
VS-GBPC3506A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Description: BRIDGE RECT 1P 600V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
товар відсутній
VS-GBPC3508A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
Description: BRIDGE RECT 1P 800V 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
товар відсутній
VS-GBPC3510A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
Description: BRIDGE RECT 1P 1KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
товар відсутній
VS-GBPC3512A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-A
Packaging: Bulk
Package / Case: 4-Square, GBPC-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-A
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
товар відсутній
VS-2KBB100 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 499 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.6 грн |
10+ | 88.43 грн |
100+ | 70.41 грн |
VS-2KBB100R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
Description: BRIDGE RECT 1PHASE 1KV 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.9 A
на замовлення 439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.89 грн |
10+ | 83.55 грн |
100+ | 66.49 грн |
VS-2KBB20 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
товар відсутній
VS-2KBB20R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1P 200V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 408 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.74 грн |
10+ | 90.15 грн |
100+ | 71.75 грн |
VS-2KBB40 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
на замовлення 214 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 151.27 грн |
10+ | 120.65 грн |
100+ | 96.01 грн |
VS-2KBB40R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 508 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 151.27 грн |
10+ | 120.65 грн |
100+ | 96.01 грн |
500+ | 76.24 грн |
VS-2KBB60R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
Description: BRIDGE RECT 1P 600V 1.9A 2KBB
товар відсутній
VS-2KBB80 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
Description: RECTIFIER BRIDGE 800V 1.9A D-37
Packaging: Tube
товар відсутній
VS-2KBB80R |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 308 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.31 грн |
10+ | 88.91 грн |
100+ | 70.78 грн |
VS-2KBP02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.02 грн |
10+ | 96.81 грн |
100+ | 77.81 грн |
500+ | 60 грн |
VS-2KBP04 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 109.88 грн |
10+ | 87.74 грн |
100+ | 69.86 грн |
VS-2KBP06 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.32 грн |
10+ | 80.05 грн |
100+ | 62.29 грн |
500+ | 49.55 грн |
1000+ | 40.36 грн |
VS-2KBP10 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A D-44
Packaging: Bulk
Package / Case: 4-SIP, D-44
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D-44
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.74 грн |
10+ | 84.92 грн |
100+ | 66.06 грн |
VS-KBPC106 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A D-72
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A D-72
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 143.42 грн |
10+ | 114.26 грн |
100+ | 90.92 грн |
VS-KBPC110 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3A D-72
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3A D-72
Packaging: Bulk
Package / Case: 4-Square, KBPC-1
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC1
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.03 грн |
10+ | 81.56 грн |
250+ | 63.2 грн |
VS-SD303C04S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
товар відсутній
VS-SD303C08S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
товар відсутній
VS-SD303C10S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
Description: DIODE GEN PURP 1KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1000 V
товар відсутній
VS-SD303C12S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
товар відсутній
VS-SD303C14S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
товар відсутній
VS-SD303C16S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
товар відсутній
VS-SD303C20S20C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
Description: DIODE GEN PURP 2KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2000 V
товар відсутній
VS-SD303C25S20C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
Description: DIODE GP 2.5KV 350A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 350A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 1100 A
Current - Reverse Leakage @ Vr: 35 mA @ 2500 V
товар відсутній
VS-SD403C04S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
Description: DIODE GEN PURP 400V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 400 V
товар відсутній
VS-SD403C08S10C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
Description: DIODE GEN PURP 800V 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 800 V
товар відсутній
VS-SD403C12S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
Description: DIODE GP 1.2KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1200 V
товар відсутній
VS-SD403C14S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
Description: DIODE GP 1.4KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1400 V
товар відсутній
VS-SD403C16S15C |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
Description: DIODE GP 1.6KV 430A DO200AA
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 430A
Supplier Device Package: DO-200AA, A-PUK
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.83 V @ 1350 A
Current - Reverse Leakage @ Vr: 35 mA @ 1600 V
товар відсутній
VS-SD703C25S30L |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
Description: DIODE GP 2.5KV 790A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 790A
Supplier Device Package: DO-200AB, B-PUK
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
товар відсутній
20ETF04S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
20ETF10S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
20ETF06S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
20ETF08S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
товар відсутній
20ETF12S |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-T40HFL20S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
товар відсутній
VS-T40HFL20S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 40A D-55
Description: DIODE GEN PURP 200V 40A D-55
товар відсутній
VS-T40HFL60S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 40A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: D-55
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-T70HFL100S05 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE GEN PURP 1KV 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
товар відсутній
T70HFL10S02 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE GEN PURP 100V 70A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: D-55
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній