Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (35966) > Сторінка 29 з 600

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MUR120/54 MUR120/54 Vishay General Semiconductor - Diodes Division Description: DIODE SUPERFAST DO41 200V 25NS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MUR160/54 MUR160/54 Vishay General Semiconductor - Diodes Division MUR1x0-E3,.pdf Description: DIODE SUPERFAST DO41 600V 50NS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
P600B-E3/54 P600B-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 100V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 28800 шт:
термін постачання 21-31 дні (днів)
800+31.51 грн
1600+ 24.71 грн
2400+ 23.27 грн
5600+ 20.79 грн
20000+ 19.83 грн
Мінімальне замовлення: 800
P600D/4 P600D/4 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 200V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
P600J-E3/54 P600J-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE GEN PURP 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 29600 шт:
термін постачання 21-31 дні (днів)
800+38.71 грн
1600+ 30.54 грн
Мінімальне замовлення: 800
P600M-E3/54 P600M-E3/54 Vishay General Semiconductor - Diodes Division p600a.pdf Description: DIODE P600 1000V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 37600 шт:
термін постачання 21-31 дні (днів)
800+31.91 грн
1600+ 25.03 грн
2400+ 23.56 грн
5600+ 21.06 грн
20000+ 20.09 грн
Мінімальне замовлення: 800
RGL34D/1 RGL34D/1 Vishay General Semiconductor - Diodes Division rgl34a.pdf Description: DIODE FAST MINIMELF 200V 150NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RGL34J/1 RGL34J/1 Vishay General Semiconductor - Diodes Division rgl34a.pdf Description: DIODE FAST MINIMELF 600V 250NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RGL41B/1 RGL41B/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RGL41J/1 RGL41J/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RGL41D/1 RGL41D/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 200V 1A DO213AB
товар відсутній
RGL41G/1 RGL41G/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RGL41M/1 RGL41M/1 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RGP02-20E/54 RGP02-20E/54 Vishay General Semiconductor - Diodes Division rgp02.pdf Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
товар відсутній
RMB2S-E3/45 RMB2S-E3/45 Vishay General Semiconductor - Diodes Division rmbs.pdf Description: BRIDGE RECT 3P 200V TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5225 шт:
термін постачання 21-31 дні (днів)
6+56.37 грн
10+ 44.18 грн
100+ 34.34 грн
500+ 27.32 грн
1000+ 22.25 грн
2000+ 20.95 грн
5000+ 19.62 грн
Мінімальне замовлення: 6
RMB4S-E3/45 RMB4S-E3/45 Vishay General Semiconductor - Diodes Division rmbs.pdf Description: BRIDGE RECT 3P 400V TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS2G/1 RS2G/1 Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 400V 1.5A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
SB040/54 SB040/54 Vishay General Semiconductor - Diodes Division SB020%20thru%20SB060.pdf Description: DIODE SCHOTTKY 40V 600MA MPG06
товар відсутній
SB140-E3/54 SB140-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: SCHOTTKY DO15 40V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 38500 шт:
термін постачання 21-31 дні (днів)
5500+5.8 грн
11000+ 4.95 грн
27500+ 4.88 грн
Мінімальне замовлення: 5500
SB150-E3/54 SB150-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: SCHOTTKY DO15 50V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
5500+6.57 грн
11000+ 5.6 грн
Мінімальне замовлення: 5500
SB160-E3/54 SB160-E3/54 Vishay General Semiconductor - Diodes Division sb110.pdf Description: SCHOTTKY DO15 60V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
5500+6.64 грн
Мінімальне замовлення: 5500
SB340/4 SB340/4 Vishay General Semiconductor - Diodes Division sb320.pdf Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SB360-E3/54 SB360-E3/54 Vishay General Semiconductor - Diodes Division sb320.pdf Description: SCHOTTKY DO201 60V 3A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
1400+12.78 грн
2800+ 11 грн
Мінімальне замовлення: 1400
SB5H100/4 SB5H100/4 Vishay General Semiconductor - Diodes Division sb5h90.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товар відсутній
SM5A27/2D SM5A27/2D Vishay General Semiconductor - Diodes Division SM5A27_Rev10.pdf Description: TVS DIODE 22VWM 40VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 55A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
товар відсутній
SMCJ100CA/57T SMCJ100CA/57T Vishay General Semiconductor - Diodes Division SMCJ5.0A_thru_188CA.pdf Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SS14/1 SS14/1 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товар відсутній
SS24/1 SS24/1 Vishay General Semiconductor - Diodes Division ss22.pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS36/7T SS36/7T Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
TMPG06-27A/4 TMPG06-27A/4 Vishay General Semiconductor - Diodes Division TMPG06-6.8%20-%20TMPG06-43A_Rev_Dec2005.pdf Description: TVS DIODE 23.1VWM 37.5VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
TPSMB6.8A/1 TPSMB6.8A/1 Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
TPSMB8.2A/1 TPSMB8.2A/1 Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.02VWM 12.1VC DO214AA
товар відсутній
UF4002-E3/54 UF4002-E3/54 Vishay General Semiconductor - Diodes Division uf4001.pdf Description: ULTRFAST DO41 100V 1A 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 15500 шт:
термін постачання 21-31 дні (днів)
5500+6.09 грн
11000+ 5.19 грн
Мінімальне замовлення: 5500
UF4004-E3/54 UF4004-E3/54 Vishay General Semiconductor - Diodes Division uf4001.pdf Description: ULTRFAST DO41 400V 1A 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 38500 шт:
термін постачання 21-31 дні (днів)
5500+6.15 грн
11000+ 5.24 грн
27500+ 5.18 грн
Мінімальне замовлення: 5500
UF4007-E3/54 UF4007-E3/54 Vishay General Semiconductor - Diodes Division uf4001.pdf Description: ULTRAFAST DO41 1000V 75NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
5500+8.02 грн
11000+ 6.96 грн
27500+ 6.85 грн
Мінімальне замовлення: 5500
UF5404/54 UF5404/54 Vishay General Semiconductor - Diodes Division Description: ULTRAFAST DO201 400V 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
UF5408-E3/54 UF5408-E3/54 Vishay General Semiconductor - Diodes Division uf5400.pdf Description: ULTRAFAST DO201 1000V 75NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 15400 шт:
термін постачання 21-31 дні (днів)
1400+16.57 грн
2800+ 14.21 грн
7000+ 13.46 грн
9800+ 11.7 грн
Мінімальне замовлення: 1400
ES1D/1 ES1D/1 Vishay General Semiconductor - Diodes Division es1.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES2D/1 ES2D/1 Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D/7T ES3D/7T Vishay General Semiconductor - Diodes Division ES3A-ES3D.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
5KP33A/54 5KP33A/54 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 33VWM 53.3VC P600
товар відсутній
5KP36A/54 5KP36A/54 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86.1A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
DF005M/45 DF005M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 50V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DF005S/27 DF005S/27 Vishay General Semiconductor - Diodes Division dfs.pdf Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DF08M/45 DF08M/45 Vishay General Semiconductor - Diodes Division dfm.pdf Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
DF08S/27 DF08S/27 Vishay General Semiconductor - Diodes Division DS_417_DF.pdf Description: BRIDGE RECT 1PHASE 800V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
DF10S/27 DF10S/27 Vishay General Semiconductor - Diodes Division DS_417_DF.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SA12CA/54 SA12CA/54 Vishay General Semiconductor - Diodes Division SA5.0-170CA.pdf Description: TVS DIODE 12VWM 19.9VC DO204AC
товар відсутній
SMBJ36CA/1 SMBJ36CA/1 Vishay General Semiconductor - Diodes Division SMBJ5.0A%20thru%20SMBJ188A.pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SMBJ6.0CA/1 SMBJ6.0CA/1 Vishay General Semiconductor - Diodes Division SMBJ5.0A thru SMBJ188A.pdf Description: TVS DIODE 6VWM 10.3VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
ES2B/1 ES2B/1 Vishay General Semiconductor - Diodes Division es2.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES3B/7T ES3B/7T Vishay General Semiconductor - Diodes Division ES3A-ES3D.pdf Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
MURS120/2 MURS120/2 Vishay General Semiconductor - Diodes Division murs120.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MURS160/2 MURS160/2 Vishay General Semiconductor - Diodes Division murs140.pdf Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1B/11 RS1B/11 Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1D/1 RS1D/1 Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1G/1 RS1G/1 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
RS3G/7T RS3G/7T Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
SA10CA/54 SA10CA/54 Vishay General Semiconductor - Diodes Division SA5.0-170CA.pdf Description: TVS DIODE 10VWM 17VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SMCJ12CA/57T SMCJ12CA/57T Vishay General Semiconductor - Diodes Division SMCJ5.0A_thru_188CA.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
товар відсутній
MUR120/54
MUR120/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SUPERFAST DO41 200V 25NS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MUR160/54 MUR1x0-E3,.pdf
MUR160/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SUPERFAST DO41 600V 50NS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
P600B-E3/54 p600a.pdf
P600B-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 100V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 28800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+31.51 грн
1600+ 24.71 грн
2400+ 23.27 грн
5600+ 20.79 грн
20000+ 19.83 грн
Мінімальне замовлення: 800
P600D/4 p600a.pdf
P600D/4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 200V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
P600J-E3/54 p600a.pdf
P600J-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 29600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+38.71 грн
1600+ 30.54 грн
Мінімальне замовлення: 800
P600M-E3/54 p600a.pdf
P600M-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE P600 1000V 6A 175C
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 37600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+31.91 грн
1600+ 25.03 грн
2400+ 23.56 грн
5600+ 21.06 грн
20000+ 20.09 грн
Мінімальне замовлення: 800
RGL34D/1 rgl34a.pdf
RGL34D/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE FAST MINIMELF 200V 150NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RGL34J/1 rgl34a.pdf
RGL34J/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE FAST MINIMELF 600V 250NS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RGL41B/1 bym1150.pdf
RGL41B/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RGL41J/1 bym1150.pdf
RGL41J/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RGL41D/1 bym1150.pdf
RGL41D/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
товар відсутній
RGL41G/1 bym1150.pdf
RGL41G/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RGL41M/1 bym1150.pdf
RGL41M/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RGP02-20E/54 rgp02.pdf
RGP02-20E/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
товар відсутній
RMB2S-E3/45 rmbs.pdf
RMB2S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 200V TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+56.37 грн
10+ 44.18 грн
100+ 34.34 грн
500+ 27.32 грн
1000+ 22.25 грн
2000+ 20.95 грн
5000+ 19.62 грн
Мінімальне замовлення: 6
RMB4S-E3/45 rmbs.pdf
RMB4S-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 400V TO269AA
Packaging: Tube
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS2G/1 rs2a.pdf
RS2G/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
SB040/54 SB020%20thru%20SB060.pdf
SB040/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 600MA MPG06
товар відсутній
SB140-E3/54 sb110.pdf
SB140-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY DO15 40V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 38500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+5.8 грн
11000+ 4.95 грн
27500+ 4.88 грн
Мінімальне замовлення: 5500
SB150-E3/54 sb110.pdf
SB150-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY DO15 50V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+6.57 грн
11000+ 5.6 грн
Мінімальне замовлення: 5500
SB160-E3/54 sb110.pdf
SB160-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY DO15 60V 1A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+6.64 грн
Мінімальне замовлення: 5500
SB340/4 sb320.pdf
SB340/4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SB360-E3/54 sb320.pdf
SB360-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCHOTTKY DO201 60V 3A 150C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1400+12.78 грн
2800+ 11 грн
Мінімальне замовлення: 1400
SB5H100/4 sb5h90.pdf
SB5H100/4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товар відсутній
SM5A27/2D SM5A27_Rev10.pdf
SM5A27/2D
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 40VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 55A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
товар відсутній
SMCJ100CA/57T SMCJ5.0A_thru_188CA.pdf
SMCJ100CA/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SS14/1
SS14/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
товар відсутній
SS24/1 ss22.pdf
SS24/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
SS36/7T
SS36/7T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
TMPG06-27A/4 TMPG06-6.8%20-%20TMPG06-43A_Rev_Dec2005.pdf
TMPG06-27A/4
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5VC MPG06
Packaging: Tape & Reel (TR)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: MPG06
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
TPSMB6.8A/1 tpsmb.pdf
TPSMB6.8A/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
TPSMB8.2A/1 tpsmb.pdf
TPSMB8.2A/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1VC DO214AA
товар відсутній
UF4002-E3/54 uf4001.pdf
UF4002-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRFAST DO41 100V 1A 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 15500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+6.09 грн
11000+ 5.19 грн
Мінімальне замовлення: 5500
UF4004-E3/54 uf4001.pdf
UF4004-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRFAST DO41 400V 1A 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 38500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+6.15 грн
11000+ 5.24 грн
27500+ 5.18 грн
Мінімальне замовлення: 5500
UF4007-E3/54 uf4001.pdf
UF4007-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST DO41 1000V 75NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5500+8.02 грн
11000+ 6.96 грн
27500+ 6.85 грн
Мінімальне замовлення: 5500
UF5404/54
UF5404/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST DO201 400V 50NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
UF5408-E3/54 uf5400.pdf
UF5408-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST DO201 1000V 75NS 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 15400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1400+16.57 грн
2800+ 14.21 грн
7000+ 13.46 грн
9800+ 11.7 грн
Мінімальне замовлення: 1400
ES1D/1 es1.pdf
ES1D/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES2D/1 es2.pdf
ES2D/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
ES3D/7T ES3A-ES3D.pdf
ES3D/7T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
5KP33A/54
5KP33A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC P600
товар відсутній
5KP36A/54
5KP36A/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 86.1A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
DF005M/45 dfm.pdf
DF005M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DF005S/27 dfs.pdf
DF005S/27
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
DF08M/45 dfm.pdf
DF08M/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1A DFM
Packaging: Bulk
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
DF08S/27 DS_417_DF.pdf
DF08S/27
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
DF10S/27 DS_417_DF.pdf
DF10S/27
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1A DFS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
SA12CA/54 SA5.0-170CA.pdf
SA12CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO204AC
товар відсутній
SMBJ36CA/1 SMBJ5.0A%20thru%20SMBJ188A.pdf
SMBJ36CA/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SMBJ6.0CA/1 SMBJ5.0A thru SMBJ188A.pdf
SMBJ6.0CA/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.3A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
ES2B/1 es2.pdf
ES2B/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES3B/7T ES3A-ES3D.pdf
ES3B/7T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
MURS120/2 murs120.pdf
MURS120/2
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
MURS160/2 murs140.pdf
MURS160/2
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1B/11 rs1a.pdf
RS1B/11
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1D/1 rs1a.pdf
RS1D/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1G/1
RS1G/1
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
RS3G/7T
RS3G/7T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
SA10CA/54 SA5.0-170CA.pdf
SA10CA/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SMCJ12CA/57T SMCJ5.0A_thru_188CA.pdf
SMCJ12CA/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
товар відсутній
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