Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 41 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS1P4L-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1.5A DO220AACurrent - Reverse Leakage @ Vr: 150 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 130pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS22-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS24-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
на замовлення 45450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS26-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2H10-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 2A DO214AASupplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C |
на замовлення 8250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2P2-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 2A DO220AACurrent - Reverse Leakage @ Vr: 150 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2P2L-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 2A DO220AACurrent - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 130pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2P3-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO220AACurrent - Reverse Leakage @ Vr: 150 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2P3L-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO220AACurrent - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 130pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS2P4-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO220AAPackaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS34-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 16150 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS36-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 26350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SS3H10-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 3A DO214ABPackaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC |
на замовлення 4250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSA23L-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214ACCurrent - Reverse Leakage @ Vr: 500 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSA24-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 16200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSA33L-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 3A DO214ACCurrent - Reverse Leakage @ Vr: 500 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 127800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSA34-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO214ACCurrent - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
на замовлення 10800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSB43L-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 4A DO214AACurrent - Reverse Leakage @ Vr: 600 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSB44-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AACurrent - Reverse Leakage @ Vr: 400 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 4A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 92250 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSC53L-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A DO214ABCurrent - Reverse Leakage @ Vr: 700 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
на замовлення 16150 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SSC54-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TPSMP24AHM3/84A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC DO220AAPart Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 33.2V Voltage - Breakdown (Min): 22.8V Unidirectional Channels: 1 Supplier Device Package: DO-220AA (SMP) Voltage - Reverse Standoff (Typ): 20.5V Current - Peak Pulse (10/1000µs): 12A Applications: Automotive Operating Temperature: -65°C ~ 185°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
US1D-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
US1G-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 16200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
US1M-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 97200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
VTS40100CT-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO2203Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
ES1D-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 103722 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES1PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES2B-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 8455 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES2D-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 90743 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES2F-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 300V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 21716 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES2G-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 74477 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES3B-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 419 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ES3G-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3723 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ESH1PB-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 3145 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ESH1PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 5102 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MURS120-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
на замовлення 13984 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MURS160-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 75495 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MURS320-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214ABCurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 20238 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MURS340-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MURS360-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 3A DO214ABVoltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS1D-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACVoltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A |
на замовлення 37671 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| RS1J-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 45687 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
RS2D-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1.5A DO214AA |
на замовлення 198 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS2G-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1.5A DO214AACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS2J-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1.5A DO214AAVoltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS3B-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 44pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 6981 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS3D-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 44pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS3G-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Capacitance @ Vr, F: 44pF @ 4V, 1MHz Technology: Standard |
на замовлення 1252 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
RS3J-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 3A DO214ABCurrent - Average Rectified (Io): 3A Capacitance @ Vr, F: 34pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1D-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACCapacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A |
на замовлення 6179 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1G-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214ACCurrent - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 825394 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1J-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214ACCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 9947 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1M-E3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 346205 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1PB-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 5094 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S1PD-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S2G-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO214AA |
на замовлення 1235 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
S2J-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
S2M-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 1000V 1.5A DO214AACurrent - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 16pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 15495 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
S3D-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 3A DO214ABCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 5358 шт: термін постачання 21-31 дні (днів) |
|
| SS1P4L-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.15 грн |
| 6000+ | 7.19 грн |
| SS22-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 14.58 грн |
| 1500+ | 12.67 грн |
| 2250+ | 11.97 грн |
| SS24-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 45450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 14.70 грн |
| 1500+ | 12.77 грн |
| 2250+ | 12.06 грн |
| 3750+ | 10.57 грн |
| 5250+ | 10.13 грн |
| 7500+ | 9.70 грн |
| SS26-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 14.07 грн |
| 1500+ | 12.21 грн |
| 2250+ | 11.53 грн |
| 3750+ | 10.10 грн |
| 5250+ | 9.68 грн |
| 7500+ | 9.26 грн |
| SS2H10-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Description: DIODE SCHOTTKY 100V 2A DO214AA
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
на замовлення 8250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 15.52 грн |
| 1500+ | 12.14 грн |
| 2250+ | 10.86 грн |
| 5250+ | 9.67 грн |
| SS2P2-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.57 грн |
| SS2P2L-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 20V 2A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.60 грн |
| SS2P3-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.57 грн |
| SS2P3L-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A DO220AA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.63 грн |
| 6000+ | 8.47 грн |
| 9000+ | 8.05 грн |
| 15000+ | 7.12 грн |
| 21000+ | 6.87 грн |
| SS2P4-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.58 грн |
| 6000+ | 8.41 грн |
| 9000+ | 8.00 грн |
| 15000+ | 7.07 грн |
| 21000+ | 6.81 грн |
| 30000+ | 6.55 грн |
| SS34-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 16150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 850+ | 19.77 грн |
| 1700+ | 17.29 грн |
| 2550+ | 16.40 грн |
| 4250+ | 14.45 грн |
| 5950+ | 13.89 грн |
| 8500+ | 13.35 грн |
| SS36-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 26350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 850+ | 20.11 грн |
| 1700+ | 17.60 грн |
| 2550+ | 16.69 грн |
| 4250+ | 14.71 грн |
| 5950+ | 14.14 грн |
| 8500+ | 13.59 грн |
| SS3H10-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Description: DIODE SCHOTTKY 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
на замовлення 4250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 850+ | 18.95 грн |
| 1700+ | 16.75 грн |
| 2550+ | 15.98 грн |
| 4250+ | 14.17 грн |
| SSA23L-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 8.71 грн |
| 3600+ | 7.72 грн |
| SSA24-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 16200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 5.66 грн |
| SSA33L-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 3A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 127800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 10.14 грн |
| 3600+ | 9.63 грн |
| 5400+ | 9.50 грн |
| 9000+ | 8.29 грн |
| SSA34-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 3A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 7.47 грн |
| 3600+ | 7.12 грн |
| 5400+ | 6.85 грн |
| 9000+ | 5.84 грн |
| SSB43L-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 4A DO214AA
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 16.09 грн |
| 1500+ | 14.16 грн |
| 2250+ | 13.48 грн |
| 3750+ | 11.92 грн |
| 5250+ | 11.49 грн |
| 7500+ | 11.07 грн |
| 18750+ | 10.35 грн |
| SSB44-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 4A DO214AA
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 92250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 750+ | 16.17 грн |
| 1500+ | 14.07 грн |
| 2250+ | 13.30 грн |
| 3750+ | 11.67 грн |
| 5250+ | 11.19 грн |
| 7500+ | 10.73 грн |
| SSC53L-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 5A DO214AB
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
на замовлення 16150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 850+ | 21.85 грн |
| 1700+ | 17.91 грн |
| 2550+ | 15.95 грн |
| 5950+ | 14.18 грн |
| SSC54-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 850+ | 20.51 грн |
| TPSMP24AHM3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 33.2V
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 20.5V
Current - Peak Pulse (10/1000µs): 12A
Applications: Automotive
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 33.2V
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: DO-220AA (SMP)
Voltage - Reverse Standoff (Typ): 20.5V
Current - Peak Pulse (10/1000µs): 12A
Applications: Automotive
Operating Temperature: -65°C ~ 185°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| US1D-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 5.57 грн |
| 3600+ | 5.31 грн |
| US1G-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 16200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 9.79 грн |
| 3600+ | 8.54 грн |
| 5400+ | 8.08 грн |
| 9000+ | 7.11 грн |
| 12600+ | 6.83 грн |
| US1M-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 97200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 7.50 грн |
| 3600+ | 6.51 грн |
| 5400+ | 6.15 грн |
| 9000+ | 5.39 грн |
| 12600+ | 5.16 грн |
| 18000+ | 4.94 грн |
| VTS40100CT-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 100V 20A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ES1D-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 103722 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 16+ | 19.82 грн |
| 100+ | 12.54 грн |
| 500+ | 8.81 грн |
| ES1PD-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 12+ | 25.87 грн |
| 100+ | 17.97 грн |
| 500+ | 13.16 грн |
| 1000+ | 10.70 грн |
| ES2B-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 8455 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.66 грн |
| ES2D-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 90743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.99 грн |
| 10+ | 32.53 грн |
| 100+ | 20.98 грн |
| ES2F-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE STANDARD 300V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 21716 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.84 грн |
| 11+ | 30.11 грн |
| 100+ | 19.43 грн |
| ES2G-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 74477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 32.15 грн |
| 100+ | 20.72 грн |
| ES3B-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.70 грн |
| 10+ | 42.51 грн |
| 100+ | 27.69 грн |
| ES3G-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3723 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.70 грн |
| 10+ | 42.51 грн |
| 100+ | 27.69 грн |
| ESH1PB-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 3145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.14 грн |
| 13+ | 25.19 грн |
| 100+ | 18.81 грн |
| 500+ | 13.43 грн |
| 1000+ | 12.07 грн |
| ESH1PD-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 5102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 45.56 грн |
| 12+ | 26.17 грн |
| 100+ | 18.81 грн |
| 500+ | 13.43 грн |
| 1000+ | 12.07 грн |
| MURS120-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
на замовлення 13984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 20+ | 15.43 грн |
| 100+ | 14.25 грн |
| MURS160-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 75495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 11+ | 29.20 грн |
| 100+ | 18.69 грн |
| MURS320-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 20238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.20 грн |
| 10+ | 42.14 грн |
| 100+ | 29.04 грн |
| MURS340-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.56 грн |
| 10+ | 37.90 грн |
| 100+ | 28.20 грн |
| MURS360-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.07 грн |
| 14+ | 21.79 грн |
| RS1D-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Description: DIODE STANDARD 200V 1A DO214AC
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
на замовлення 37671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.42 грн |
| 24+ | 13.01 грн |
| 100+ | 10.45 грн |
| 500+ | 7.30 грн |
| RS1J-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 45687 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.28 грн |
| 19+ | 16.42 грн |
| 100+ | 10.30 грн |
| 500+ | 7.19 грн |
| RS2D-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO214AA
Description: DIODE GEN PURP 200V 1.5A DO214AA
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 11+ | 28.22 грн |
| 100+ | 21.06 грн |
| RS2G-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.14 грн |
| 20+ | 15.73 грн |
| 100+ | 10.41 грн |
| RS2J-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Description: DIODE STANDARD 600V 1.5A DO214AA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 16+ | 19.44 грн |
| 100+ | 9.77 грн |
| RS3B-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 6981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 12+ | 26.25 грн |
| 100+ | 18.21 грн |
| RS3D-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 10+ | 38.20 грн |
| 100+ | 26.57 грн |
| RS3G-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
Description: DIODE STANDARD 400V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Technology: Standard
на замовлення 1252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 11+ | 28.97 грн |
| 100+ | 21.80 грн |
| RS3J-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO214AB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Description: DIODE STANDARD 600V 3A DO214AB
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 12+ | 26.32 грн |
| 100+ | 22.36 грн |
| S1D-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Description: DIODE STANDARD 200V 1A DO214AC
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
на замовлення 6179 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 31+ | 9.91 грн |
| 100+ | 6.72 грн |
| 500+ | 4.73 грн |
| S1G-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 825394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.78 грн |
| 43+ | 7.19 грн |
| 100+ | 6.01 грн |
| 500+ | 4.33 грн |
| S1J-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 9947 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 14.93 грн |
| 32+ | 9.53 грн |
| 100+ | 6.41 грн |
| 500+ | 4.40 грн |
| S1M-E3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 346205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 22.00 грн |
| 24+ | 13.09 грн |
| 100+ | 8.19 грн |
| 500+ | 5.68 грн |
| S1PB-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 5094 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 16+ | 19.29 грн |
| 100+ | 12.20 грн |
| 500+ | 8.56 грн |
| 1000+ | 7.63 грн |
| S1PD-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.99 грн |
| 16+ | 19.29 грн |
| 100+ | 12.20 грн |
| 500+ | 8.56 грн |
| 1000+ | 7.63 грн |
| S2G-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO214AA
Description: DIODE GEN PURP 400V 1.5A DO214AA
на замовлення 1235 шт:
термін постачання 21-31 дні (днів)
| S2J-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO214AA
Description: DIODE GEN PURP 600V 1.5A DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| S2M-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STD 1000V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 15495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 33+ | 9.38 грн |
| S3D-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 200V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 5358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 15+ | 21.56 грн |
| 100+ | 12.93 грн |










~~2.jpg)



