Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40689) > Сторінка 410 з 679
| Фото | Назва | Виробник | Інформація |
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TPSMA27AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5V DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 10.7A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4759 шт: термін постачання 21-31 дні (днів) |
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TPSMA36AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM 49.9VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMB36AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1529 шт: термін постачання 21-31 дні (днів) |
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TPSMB6.8AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.8VWM 10.5V DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 57.1A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
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TPSMP20AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17.1VWM 27.7VC DO220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMP33AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28.2VWM 45.7VC DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 8.8A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-220AA (SMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
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TPSMP36AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM 49.9VC DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-220AA (SMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14263 шт: термін постачання 21-31 дні (днів) |
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TZM5230B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: SOD-80 MiniMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 8032 шт: термін постачання 21-31 дні (днів) |
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TZMB12-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 7579 шт: термін постачання 21-31 дні (днів) |
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TZMB16-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 2009 шт: термін постачання 21-31 дні (днів) |
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TZMC39-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Qualification: AEC-Q101 |
на замовлення 9975 шт: термін постачання 21-31 дні (днів) |
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TZMC6V8-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-80 MiniMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7926 шт: термін постачання 21-31 дні (днів) |
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TZS4700-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 13V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V Qualification: AEC-Q101 |
на замовлення 12300 шт: термін постачання 21-31 дні (днів) |
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TZX14C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW DO35 |
на замовлення 8279 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TZX18B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V Qualification: AEC-Q101 |
на замовлення 18604 шт: термін постачання 21-31 дні (днів) |
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TZX3V0B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW DO35 |
на замовлення 22019 шт: термін постачання 21-31 дні (днів) |
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TZX3V0C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 100 Ohms Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 500 mV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17233 шт: термін постачання 21-31 дні (днів) |
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TZX4V7D-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW DO35 |
на замовлення 19587 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TZX5V1B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27765 шт: термін постачання 21-31 дні (днів) |
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TZX5V1C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24533 шт: термін постачання 21-31 дні (днів) |
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TZX5V6C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO35 |
на замовлення 18190 шт: термін постачання 21-31 дні (днів) |
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TZX6V8C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 25437 шт: термін постачання 21-31 дні (днів) |
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UF4005-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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UG2B-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 2915 шт: термін постачання 21-31 дні (днів) |
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US1B-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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US1J-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 6257 шт: термін постачання 21-31 дні (днів) |
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US1K-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 4546 шт: термін постачання 21-31 дні (днів) |
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US1MHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15422 шт: термін постачання 21-31 дні (днів) |
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US1M-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 53599 шт: термін постачання 21-31 дні (днів) |
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USB260HM3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4074 шт: термін постачання 21-31 дні (днів) |
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V10P10HM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
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V10P10-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
на замовлення 3369 шт: термін постачання 21-31 дні (днів) |
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V10P20-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 2.4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2.4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 200 V |
на замовлення 4472 шт: термін постачання 21-31 дні (днів) |
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V10P20-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 2.4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2.4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 200 V |
на замовлення 49108 шт: термін постачання 21-31 дні (днів) |
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V10P45-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 4.4A TO277A |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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V10P45S-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 4.4A TO277A |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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V12P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4.6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V |
на замовлення 5327 шт: термін постачання 21-31 дні (днів) |
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V3PAL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 3A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
на замовлення 13805 шт: термін постачання 21-31 дні (днів) |
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V4PAL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 3A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 450pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 4 A Current - Reverse Leakage @ Vr: 450 µA @ 45 V |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
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V8PAL45-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 4A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 1.85 mA @ 45 V |
на замовлення 19544 шт: термін постачання 21-31 дні (днів) |
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VB20100C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
на замовлення 704 шт: термін постачання 21-31 дні (днів) |
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VB60100C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 6382 шт: термін постачання 21-31 дні (днів) |
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VBT4045C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 4453 шт: термін постачання 21-31 дні (днів) |
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VBT6045C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 30A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
на замовлення 7303 шт: термін постачання 21-31 дні (днів) |
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VBUS54DD-HS4-G4-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 19VC LLP1010-5LPackaging: Cut Tape (CT) Package / Case: 5-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: LLP1010-5L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.9V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 57W Power Line Protection: No |
на замовлення 516 шт: термін постачання 21-31 дні (днів) |
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VCAN26A2-03GHE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 26.5VWM 50VC SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-323 Bidirectional Channels: 2 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17403 шт: термін постачання 21-31 дні (днів) |
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VCAN26A2-03S-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 26.5VWM 50VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 26.5V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 28443 шт: термін постачання 21-31 дні (днів) |
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VSSA210-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1.7A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 175pF @ 4V, 1MHz Current - Average Rectified (Io): 1.7A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A |
на замовлення 10069 шт: термін постачання 21-31 дні (днів) |
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VSSAF3N50-M3/6A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2.7A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 570pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 50 V |
на замовлення 4924 шт: термін постачання 21-31 дні (днів) |
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VSSAF5N50-M3/6A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 3A DO221ACPackaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 850pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1.4 mA @ 50 V |
на замовлення 9158 шт: термін постачання 21-31 дні (днів) |
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VSSB420S-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 1.8A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 1.8A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 150 µA @ 200 V |
на замовлення 9514 шт: термін постачання 21-31 дні (днів) |
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VSSC520S-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 5A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 200 V |
на замовлення 1071 шт: термін постачання 21-31 дні (днів) |
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VTVS15ASMF-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.1VWM 25VC DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Frequency: 684pF @ 1MHz Current - Peak Pulse (10/1000µs): 15.47A Voltage - Reverse Standoff (Typ): 15.1V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 23695 шт: термін постачання 21-31 дні (днів) |
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VTVS23ASMF-HM3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 22.6VWM 38VC DO219AB |
на замовлення 24694 шт: термін постачання 21-31 дні (днів) |
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ZGL41-180A-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 180V 1W GL41Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 180 V Impedance (Max) (Zzt): 900 Ohms Supplier Device Package: DO-213AB (GL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V |
на замовлення 3930 шт: термін постачання 21-31 дні (днів) |
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ZM4729A-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 100 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9360 шт: термін постачання 21-31 дні (днів) |
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ZM4749A-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V Qualification: AEC-Q101 |
на замовлення 2712 шт: термін постачання 21-31 дні (днів) |
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ZMY22-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 17 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1746 шт: термін постачання 21-31 дні (днів) |
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ZMY30-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V Qualification: AEC-Q101 |
на замовлення 9794 шт: термін постачання 21-31 дні (днів) |
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ZMY4V3-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6291 шт: термін постачання 21-31 дні (днів) |
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| TPSMA27AHE3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 23.1VWM 37.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4759 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.13 грн |
| 14+ | 24.12 грн |
| 100+ | 16.32 грн |
| 500+ | 11.95 грн |
| TPSMA36AHE3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TPSMB36AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.63 грн |
| 11+ | 32.27 грн |
| 100+ | 22.10 грн |
| TPSMB6.8AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| 15+ | 22.87 грн |
| 100+ | 21.32 грн |
| TPSMP20AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO220AA
Description: TVS DIODE 17.1VWM 27.7VC DO220AA
товару немає в наявності
В кошику
од. на суму грн.
| TPSMP33AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 38.00 грн |
| 11+ | 31.02 грн |
| 100+ | 23.17 грн |
| 500+ | 17.08 грн |
| TPSMP36AHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM 49.9VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.68 грн |
| 13+ | 27.28 грн |
| 100+ | 18.95 грн |
| 500+ | 13.88 грн |
| 1000+ | 11.28 грн |
| TZM5230B-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 8032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.36 грн |
| 51+ | 6.57 грн |
| 109+ | 3.07 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.28 грн |
| 2000+ | 2.24 грн |
| 5000+ | 2.17 грн |
| TZMB12-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 7579 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 24.18 грн |
| 21+ | 15.88 грн |
| 100+ | 7.75 грн |
| 500+ | 6.07 грн |
| 1000+ | 4.22 грн |
| 2000+ | 3.65 грн |
| 5000+ | 3.33 грн |
| TZMB16-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 2009 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 24.18 грн |
| 21+ | 15.88 грн |
| 100+ | 7.75 грн |
| 500+ | 6.07 грн |
| 1000+ | 4.22 грн |
| 2000+ | 3.65 грн |
| TZMC39-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
на замовлення 9975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 10.36 грн |
| 48+ | 7.07 грн |
| 109+ | 3.07 грн |
| 500+ | 2.74 грн |
| 1000+ | 2.45 грн |
| 2000+ | 2.41 грн |
| 5000+ | 2.34 грн |
| TZMC6V8-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.50 грн |
| 51+ | 6.57 грн |
| 116+ | 2.87 грн |
| 500+ | 2.56 грн |
| 1000+ | 2.29 грн |
| 2000+ | 2.26 грн |
| 5000+ | 2.19 грн |
| TZS4700-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 13V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
на замовлення 12300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.95 грн |
| 40+ | 8.32 грн |
| 100+ | 3.93 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.55 грн |
| TZX14C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW DO35
Description: DIODE ZENER 14V 500MW DO35
на замовлення 8279 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TZX18B-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 18604 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.14 грн |
| 28+ | 12.06 грн |
| 100+ | 5.86 грн |
| 500+ | 4.60 грн |
| 1000+ | 3.19 грн |
| 2000+ | 2.77 грн |
| 5000+ | 2.52 грн |
| TZX3V0B-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
на замовлення 22019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.27 грн |
| 23+ | 14.55 грн |
| 100+ | 7.93 грн |
| 500+ | 4.58 грн |
| 1000+ | 3.12 грн |
| 2000+ | 2.66 грн |
| 5000+ | 2.36 грн |
| TZX3V0C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.14 грн |
| 28+ | 11.98 грн |
| 100+ | 5.88 грн |
| 500+ | 4.60 грн |
| 1000+ | 3.20 грн |
| 2000+ | 2.77 грн |
| 5000+ | 2.53 грн |
| TZX4V7D-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35
Description: DIODE ZENER 4.7V 500MW DO35
на замовлення 19587 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TZX5V1B-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.14 грн |
| 28+ | 11.98 грн |
| 100+ | 5.85 грн |
| 500+ | 4.57 грн |
| 1000+ | 3.18 грн |
| 2000+ | 2.75 грн |
| 5000+ | 2.51 грн |
| TZX5V1C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24533 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.14 грн |
| 28+ | 11.98 грн |
| 100+ | 5.85 грн |
| 500+ | 4.57 грн |
| 1000+ | 3.18 грн |
| 2000+ | 2.75 грн |
| 5000+ | 2.51 грн |
| TZX5V6C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO35
Description: DIODE ZENER 5.6V 500MW DO35
на замовлення 18190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.14 грн |
| 22+ | 15.30 грн |
| 100+ | 8.33 грн |
| 500+ | 4.81 грн |
| 1000+ | 3.28 грн |
| 2000+ | 2.79 грн |
| 5000+ | 2.48 грн |
| TZX6V8C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.64 грн |
| 75+ | 4.49 грн |
| 182+ | 1.83 грн |
| 500+ | 1.68 грн |
| 1000+ | 1.64 грн |
| UF4005-M3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.27 грн |
| 15+ | 23.62 грн |
| 100+ | 16.91 грн |
| 500+ | 11.98 грн |
| 1000+ | 10.41 грн |
| 2000+ | 9.67 грн |
| UG2B-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.77 грн |
| 10+ | 38.75 грн |
| 100+ | 25.02 грн |
| 500+ | 17.92 грн |
| 1000+ | 16.13 грн |
| 2000+ | 14.62 грн |
| US1B-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| US1J-M3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6257 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.45 грн |
| 24+ | 14.05 грн |
| 100+ | 11.98 грн |
| 500+ | 8.22 грн |
| US1K-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 4546 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.64 грн |
| 19+ | 17.88 грн |
| 100+ | 12.17 грн |
| 500+ | 9.32 грн |
| 1000+ | 7.38 грн |
| 2000+ | 6.66 грн |
| US1MHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15422 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 31.09 грн |
| 17+ | 19.71 грн |
| 100+ | 15.70 грн |
| 500+ | 11.10 грн |
| 1000+ | 8.54 грн |
| 2000+ | 8.32 грн |
| US1M-M3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 53599 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 22.45 грн |
| 23+ | 14.72 грн |
| 100+ | 11.74 грн |
| 500+ | 8.22 грн |
| USB260HM3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4074 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.86 грн |
| 13+ | 26.69 грн |
| V10P10HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.41 грн |
| 10+ | 45.99 грн |
| 100+ | 36.49 грн |
| 500+ | 26.62 грн |
| 1000+ | 23.45 грн |
| 2000+ | 22.10 грн |
| V10P10-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 3369 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 55.88 грн |
| 100+ | 45.37 грн |
| 500+ | 33.30 грн |
| 1000+ | 28.81 грн |
| 2000+ | 27.80 грн |
| V10P20-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
на замовлення 4472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 170.99 грн |
| 10+ | 106.28 грн |
| 100+ | 76.57 грн |
| 500+ | 57.60 грн |
| V10P20-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
на замовлення 49108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.68 грн |
| 10+ | 48.90 грн |
| 100+ | 36.02 грн |
| 500+ | 26.27 грн |
| 1000+ | 23.14 грн |
| 2000+ | 21.81 грн |
| V10P45-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4.4A TO277A
Description: DIODE SCHOTTKY 45V 4.4A TO277A
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.68 грн |
| 10+ | 60.62 грн |
| 100+ | 46.47 грн |
| V10P45S-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4.4A TO277A
Description: DIODE SCHOTTKY 45V 4.4A TO277A
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.68 грн |
| 10+ | 60.62 грн |
| 100+ | 46.47 грн |
| V12P6-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Description: DIODE SCHOTTKY 60V 4.6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
на замовлення 5327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.00 грн |
| 10+ | 49.90 грн |
| 100+ | 38.13 грн |
| 500+ | 27.88 грн |
| V3PAL45-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
на замовлення 13805 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.18 грн |
| 12+ | 28.03 грн |
| 100+ | 19.05 грн |
| 500+ | 14.02 грн |
| 1000+ | 12.74 грн |
| 2000+ | 11.65 грн |
| 5000+ | 10.29 грн |
| V4PAL45-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 4 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Description: DIODE SCHOTTKY 45V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 4 A
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.50 грн |
| 11+ | 30.94 грн |
| 100+ | 21.10 грн |
| 500+ | 15.57 грн |
| 1000+ | 14.18 грн |
| V8PAL45-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.85 mA @ 45 V
Description: DIODE SCHOTTKY 45V 4A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 1.85 mA @ 45 V
на замовлення 19544 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.27 грн |
| 10+ | 46.07 грн |
| 100+ | 37.42 грн |
| 500+ | 27.34 грн |
| 1000+ | 24.20 грн |
| 2000+ | 22.82 грн |
| VB20100C-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
на замовлення 704 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.36 грн |
| 10+ | 124.58 грн |
| 100+ | 85.50 грн |
| VB60100C-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOT 100V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 6382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.76 грн |
| 10+ | 137.88 грн |
| 100+ | 109.90 грн |
| VBT4045C-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4453 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.08 грн |
| 10+ | 157.34 грн |
| 100+ | 112.57 грн |
| VBT6045C-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 7303 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.35 грн |
| 10+ | 171.90 грн |
| 100+ | 129.67 грн |
| VBUS54DD-HS4-G4-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 19VC LLP1010-5L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 19VC LLP1010-5L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
на замовлення 516 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.63 грн |
| 11+ | 32.02 грн |
| 100+ | 21.80 грн |
| 500+ | 16.10 грн |
| VCAN26A2-03GHE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.5VWM 50VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.04 грн |
| 21+ | 16.30 грн |
| 100+ | 10.99 грн |
| 500+ | 7.96 грн |
| 1000+ | 7.18 грн |
| VCAN26A2-03S-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26.5VWM 50VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 26.5VWM 50VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 28443 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.68 грн |
| 36+ | 9.31 грн |
| 100+ | 7.30 грн |
| 500+ | 6.11 грн |
| VSSA210-M3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
на замовлення 10069 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.95 грн |
| 16+ | 20.79 грн |
| 100+ | 14.08 грн |
| 500+ | 10.26 грн |
| VSSAF3N50-M3/6A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Description: DIODE SCHOTTKY 50V 2.7A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 570pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
на замовлення 4924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 38.00 грн |
| 14+ | 24.45 грн |
| 100+ | 16.54 грн |
| 500+ | 12.11 грн |
| 1000+ | 10.97 грн |
| VSSAF5N50-M3/6A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 50 V
Description: DIODE SCHOTTKY 50V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 50 V
на замовлення 9158 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.18 грн |
| 13+ | 26.20 грн |
| 100+ | 21.47 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.80 грн |
| VSSB420S-M3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 1.8A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Description: DIODE SCHOTTKY 200V 1.8A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 9514 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| 31+ | 11.06 грн |
| 100+ | 9.68 грн |
| 500+ | 8.48 грн |
| VSSC520S-M3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.95 грн |
| 11+ | 30.85 грн |
| 100+ | 23.13 грн |
| 500+ | 16.72 грн |
| 1000+ | 14.96 грн |
| VTVS15ASMF-HM3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.1VWM 25VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 684pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.47A
Voltage - Reverse Standoff (Typ): 15.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.1VWM 25VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 684pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15.47A
Voltage - Reverse Standoff (Typ): 15.1V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23695 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.77 грн |
| 19+ | 17.63 грн |
| 100+ | 12.58 грн |
| 500+ | 9.79 грн |
| 1000+ | 9.50 грн |
| VTVS23ASMF-HM3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22.6VWM 38VC DO219AB
Description: TVS DIODE 22.6VWM 38VC DO219AB
на замовлення 24694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.59 грн |
| 11+ | 31.52 грн |
| 100+ | 21.46 грн |
| 500+ | 15.10 грн |
| 1000+ | 11.33 грн |
| ZGL41-180A-E3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1W GL41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
Description: DIODE ZENER 180V 1W GL41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB (GL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.9 V
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.18 грн |
| 10+ | 35.34 грн |
| 100+ | 24.59 грн |
| 500+ | 18.02 грн |
| ZM4729A-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.95 грн |
| 17+ | 20.54 грн |
| 100+ | 10.43 грн |
| 500+ | 9.49 грн |
| ZM4749A-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
на замовлення 2712 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.36 грн |
| 18+ | 18.88 грн |
| 100+ | 8.77 грн |
| 500+ | 7.62 грн |
| 1000+ | 7.00 грн |
| ZMY22-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 22V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1746 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.63 грн |
| 13+ | 27.44 грн |
| 100+ | 17.46 грн |
| 500+ | 12.34 грн |
| 1000+ | 11.04 грн |
| ZMY30-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 22.5 V
Qualification: AEC-Q101
на замовлення 9794 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 33.68 грн |
| 16+ | 21.95 грн |
| 100+ | 14.89 грн |
| 500+ | 10.83 грн |
| 1000+ | 8.67 грн |
| 2000+ | 8.52 грн |
| ZMY4V3-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6291 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.82 грн |
| 16+ | 21.37 грн |
| 100+ | 14.38 грн |
| 500+ | 10.45 грн |
| 1000+ | 8.05 грн |
| 2000+ | 7.25 грн |




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