Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40592) > Сторінка 409 з 677
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SS5P10HM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5155 шт: термін постачання 21-31 дні (днів) |
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SS5P10-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
на замовлення 11856 шт: термін постачання 21-31 дні (днів) |
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SS5P4HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 1884 шт: термін постачання 21-31 дні (днів) |
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SS5P6HM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 4294 шт: термін постачання 21-31 дні (днів) |
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SS5P6HM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 57174 шт: термін постачання 21-31 дні (днів) |
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SS5P6-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 12648 шт: термін постачання 21-31 дні (днів) |
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SS5P9-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 5A TO277A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS8P3CL-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
на замовлення 207 шт: термін постачання 21-31 дні (днів) |
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SS8P6C-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 60V TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSA24HE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 3677 шт: термін постачання 21-31 дні (днів) |
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SSA33L-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 3A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 3038 шт: термін постачання 21-31 дні (днів) |
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SSA34HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9081 шт: термін постачання 21-31 дні (днів) |
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SSB43L-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 4A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A Current - Reverse Leakage @ Vr: 600 µA @ 30 V |
на замовлення 473 шт: термін постачання 21-31 дні (днів) |
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SSB44HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6751 шт: термін постачання 21-31 дні (днів) |
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SSB44-M3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
на замовлення 30636 шт: термін постачання 21-31 дні (днів) |
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SSC54HE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2813 шт: термін постачання 21-31 дні (днів) |
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SSC54-M3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 11924 шт: термін постачання 21-31 дні (днів) |
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TLZ13C-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 13V 500MW SOD80 |
на замовлення 7325 шт: термін постачання 21-31 дні (днів) |
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TLZ27B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 27V 500MW SOD80 |
на замовлення 3954 шт: термін постачання 21-31 дні (днів) |
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TLZ36B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 500MW SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: SOD-80 MiniMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 31.2 V |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
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TLZ39B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 500MW SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 40 nA @ 33.6 V |
на замовлення 1619 шт: термін постачання 21-31 дні (днів) |
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TLZ8V2B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 500MW SOD80 |
на замовлення 9047 шт: термін постачання 21-31 дні (днів) |
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TPSMA24AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20.5VWM 33.2VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 20.5V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMA27AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 23.1VWM 37.5V DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 10.7A Voltage - Reverse Standoff (Typ): 23.1V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4759 шт: термін постачання 21-31 дні (днів) |
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TPSMA36AHE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM 49.9VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMB36AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1529 шт: термін постачання 21-31 дні (днів) |
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TPSMB6.8AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.8VWM 10.5V DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 57.1A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3460 шт: термін постачання 21-31 дні (днів) |
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TPSMP20AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17.1VWM 27.7VC DO220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPSMP33AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28.2VWM 45.7VC DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 8.8A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-220AA (SMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
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TPSMP36AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30.8VWM 49.9VC DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 185°C (TJ) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: DO-220AA (SMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14263 шт: термін постачання 21-31 дні (днів) |
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TZM5230B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: SOD-80 MiniMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 8032 шт: термін постачання 21-31 дні (днів) |
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TZMB12-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 12V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V Qualification: AEC-Q101 |
на замовлення 7579 шт: термін постачання 21-31 дні (днів) |
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TZMB16-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 16V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Qualification: AEC-Q101 |
на замовлення 2009 шт: термін постачання 21-31 дні (днів) |
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TZMC39-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 39V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 30 V Qualification: AEC-Q101 |
на замовлення 9975 шт: термін постачання 21-31 дні (днів) |
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TZMC6V8-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-80 MiniMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7926 шт: термін постачання 21-31 дні (днів) |
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TZS4700-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 13V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V Qualification: AEC-Q101 |
на замовлення 12300 шт: термін постачання 21-31 дні (днів) |
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TZX14C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 14V 500MW DO35 |
на замовлення 8279 шт: термін постачання 21-31 дні (днів) |
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TZX18B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V Qualification: AEC-Q101 |
на замовлення 18604 шт: термін постачання 21-31 дні (днів) |
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TZX3V0B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW DO35 |
на замовлення 22019 шт: термін постачання 21-31 дні (днів) |
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TZX3V0C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 100 Ohms Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 500 mV Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17233 шт: термін постачання 21-31 дні (днів) |
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TZX4V7D-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.7V 500MW DO35 |
на замовлення 19587 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TZX5V1B-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27765 шт: термін постачання 21-31 дні (днів) |
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TZX5V1C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW DO35Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 100 Ohms Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24533 шт: термін постачання 21-31 дні (днів) |
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TZX5V6C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO35 |
на замовлення 18190 шт: термін постачання 21-31 дні (днів) |
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TZX6V8C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 500MW DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 25437 шт: термін постачання 21-31 дні (днів) |
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UF4005-M3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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UG2B-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO204ACPackaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 2915 шт: термін постачання 21-31 дні (днів) |
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US1B-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 6039 шт: термін постачання 21-31 дні (днів) |
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US1J-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 6257 шт: термін постачання 21-31 дні (днів) |
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US1K-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 4546 шт: термін постачання 21-31 дні (днів) |
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US1MHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30675 шт: термін постачання 21-31 дні (днів) |
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US1M-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 53815 шт: термін постачання 21-31 дні (днів) |
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USB260HM3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4134 шт: термін постачання 21-31 дні (днів) |
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V10P10HM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2750 шт: термін постачання 21-31 дні (днів) |
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V10P10-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
на замовлення 3369 шт: термін постачання 21-31 дні (днів) |
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V10P20-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 2.4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2.4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 200 V |
на замовлення 4472 шт: термін постачання 21-31 дні (днів) |
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V10P20-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 2.4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2.4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 200 V |
на замовлення 49108 шт: термін постачання 21-31 дні (днів) |
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V10P45-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 4.4A TO277A |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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V10P45S-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 4.4A TO277A |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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V12P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.6A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4.6A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V |
на замовлення 5327 шт: термін постачання 21-31 дні (днів) |
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| SS5P10HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5155 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.23 грн |
| 10+ | 35.24 грн |
| 100+ | 24.42 грн |
| 500+ | 19.14 грн |
| 1000+ | 16.29 грн |
| 2000+ | 14.51 грн |
| SS5P10-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 11856 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.20 грн |
| 10+ | 39.07 грн |
| 100+ | 27.18 грн |
| 500+ | 19.92 грн |
| 1000+ | 16.19 грн |
| 2000+ | 14.47 грн |
| SS5P4HM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Qualification: AEC-Q101
на замовлення 1884 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.31 грн |
| 10+ | 34.53 грн |
| 100+ | 27.72 грн |
| 500+ | 19.98 грн |
| SS5P6HM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.57 грн |
| 12+ | 27.03 грн |
| 100+ | 26.07 грн |
| 500+ | 19.57 грн |
| SS5P6HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 57174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.03 грн |
| 10+ | 39.87 грн |
| 100+ | 27.69 грн |
| 500+ | 20.28 грн |
| 1000+ | 16.49 грн |
| 2000+ | 14.74 грн |
| SS5P6-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 12648 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.37 грн |
| 10+ | 37.96 грн |
| 100+ | 26.37 грн |
| 500+ | 19.32 грн |
| 1000+ | 15.70 грн |
| 2000+ | 14.04 грн |
| SS5P9-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 5A TO277A
Description: DIODE SCHOTTKY 90V 5A TO277A
товару немає в наявності
В кошику
од. на суму грн.
| SS8P3CL-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE ARR SCHOTT 30V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
на замовлення 207 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.03 грн |
| 10+ | 39.87 грн |
| 100+ | 27.61 грн |
| SS8P6C-M3/87A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 60V TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| SSA24HE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Qualification: AEC-Q101
на замовлення 3677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 15+ | 22.09 грн |
| 100+ | 15.81 грн |
| 500+ | 12.39 грн |
| SSA33L-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 3038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.92 грн |
| 13+ | 25.20 грн |
| 100+ | 17.09 грн |
| 500+ | 12.55 грн |
| 1000+ | 11.39 грн |
| 2000+ | 10.41 грн |
| SSA34HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9081 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.12 грн |
| 15+ | 21.45 грн |
| 100+ | 16.52 грн |
| 500+ | 11.72 грн |
| 1000+ | 9.37 грн |
| 2000+ | 9.24 грн |
| SSB43L-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
Description: DIODE SCHOTTKY 30V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 4 A
Current - Reverse Leakage @ Vr: 600 µA @ 30 V
на замовлення 473 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.68 грн |
| 10+ | 32.05 грн |
| 100+ | 21.92 грн |
| SSB44HE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6751 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.70 грн |
| 21+ | 15.63 грн |
| 100+ | 14.34 грн |
| 500+ | 12.78 грн |
| SSB44-M3/5BT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 30636 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 15+ | 22.49 грн |
| 100+ | 17.83 грн |
| 500+ | 12.68 грн |
| 1000+ | 11.37 грн |
| SSC54HE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.45 грн |
| 10+ | 42.34 грн |
| 100+ | 31.89 грн |
| SSC54-M3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 11924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.34 грн |
| 11+ | 29.42 грн |
| 100+ | 23.31 грн |
| 500+ | 17.46 грн |
| 1000+ | 16.16 грн |
| TLZ13C-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Description: DIODE ZENER 13V 500MW SOD80
на замовлення 7325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 19+ | 17.62 грн |
| 100+ | 9.34 грн |
| 500+ | 5.77 грн |
| 1000+ | 3.92 грн |
| TLZ27B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW SOD80
Description: DIODE ZENER 27V 500MW SOD80
на замовлення 3954 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.53 грн |
| 19+ | 17.22 грн |
| 100+ | 9.11 грн |
| 500+ | 5.63 грн |
| 1000+ | 3.83 грн |
| TLZ36B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 31.2 V
Description: DIODE ZENER 36V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 31.2 V
на замовлення 725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.70 грн |
| 20+ | 16.43 грн |
| 100+ | 8.71 грн |
| 500+ | 5.38 грн |
| TLZ39B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 33.6 V
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 nA @ 33.6 V
на замовлення 1619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.76 грн |
| 44+ | 7.26 грн |
| 100+ | 3.53 грн |
| 500+ | 3.24 грн |
| 1000+ | 3.18 грн |
| TLZ8V2B-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD80
Description: DIODE ZENER 8.2V 500MW SOD80
на замовлення 9047 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.53 грн |
| 19+ | 16.90 грн |
| 100+ | 8.95 грн |
| 500+ | 5.52 грн |
| 1000+ | 3.76 грн |
| TPSMA24AHE3_B/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20.5VWM 33.2VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TPSMA27AHE3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 23.1VWM 37.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 10.7A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4759 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.61 грн |
| 14+ | 23.12 грн |
| 100+ | 15.64 грн |
| 500+ | 11.46 грн |
| TPSMA36AHE3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM 49.9VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TPSMB36AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1529 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.71 грн |
| 11+ | 30.94 грн |
| 100+ | 21.19 грн |
| TPSMB6.8AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.84 грн |
| 15+ | 21.93 грн |
| 100+ | 20.44 грн |
| TPSMP20AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO220AA
Description: TVS DIODE 17.1VWM 27.7VC DO220AA
товару немає в наявності
В кошику
од. на суму грн.
| TPSMP33AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 803 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.43 грн |
| 11+ | 29.74 грн |
| 100+ | 22.22 грн |
| 500+ | 16.38 грн |
| TPSMP36AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30.8VWM 49.9VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30.8VWM 49.9VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.29 грн |
| 13+ | 26.15 грн |
| 100+ | 18.17 грн |
| 500+ | 13.31 грн |
| 1000+ | 10.82 грн |
| TZM5230B-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 8032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.94 грн |
| 51+ | 6.30 грн |
| 109+ | 2.94 грн |
| 500+ | 2.57 грн |
| 1000+ | 2.18 грн |
| 2000+ | 2.15 грн |
| 5000+ | 2.08 грн |
| TZMB12-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
Description: DIODE ZENER 12V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Qualification: AEC-Q101
на замовлення 7579 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.19 грн |
| 21+ | 15.23 грн |
| 100+ | 7.43 грн |
| 500+ | 5.82 грн |
| 1000+ | 4.04 грн |
| 2000+ | 3.50 грн |
| 5000+ | 3.20 грн |
| TZMB16-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Description: DIODE ZENER 16V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
на замовлення 2009 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.19 грн |
| 21+ | 15.23 грн |
| 100+ | 7.43 грн |
| 500+ | 5.82 грн |
| 1000+ | 4.04 грн |
| 2000+ | 3.50 грн |
| TZMC39-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE ZENER 39V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
Qualification: AEC-Q101
на замовлення 9975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.94 грн |
| 48+ | 6.78 грн |
| 109+ | 2.94 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.35 грн |
| 2000+ | 2.31 грн |
| 5000+ | 2.24 грн |
| TZMC6V8-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-80 MiniMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.11 грн |
| 51+ | 6.30 грн |
| 116+ | 2.75 грн |
| 500+ | 2.46 грн |
| 1000+ | 2.20 грн |
| 2000+ | 2.17 грн |
| 5000+ | 2.10 грн |
| TZS4700-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
Description: DIODE ZENER 13V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Qualification: AEC-Q101
на замовлення 12300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.42 грн |
| 40+ | 7.97 грн |
| 100+ | 3.76 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.40 грн |
| TZX14C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 500MW DO35
Description: DIODE ZENER 14V 500MW DO35
на замовлення 8279 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TZX18B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 18604 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 28+ | 11.56 грн |
| 100+ | 5.62 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.06 грн |
| 2000+ | 2.65 грн |
| 5000+ | 2.42 грн |
| TZX3V0B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
на замовлення 22019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.56 грн |
| 23+ | 13.95 грн |
| 100+ | 7.60 грн |
| 500+ | 4.39 грн |
| 1000+ | 2.99 грн |
| 2000+ | 2.55 грн |
| 5000+ | 2.26 грн |
| TZX3V0C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 500 mV
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 28+ | 11.48 грн |
| 100+ | 5.64 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.07 грн |
| 2000+ | 2.66 грн |
| 5000+ | 2.42 грн |
| TZX4V7D-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35
Description: DIODE ZENER 4.7V 500MW DO35
на замовлення 19587 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TZX5V1B-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 28+ | 11.48 грн |
| 100+ | 5.61 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.05 грн |
| 2000+ | 2.64 грн |
| 5000+ | 2.41 грн |
| TZX5V1C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 100 Ohms
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24533 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 28+ | 11.48 грн |
| 100+ | 5.61 грн |
| 500+ | 4.39 грн |
| 1000+ | 3.05 грн |
| 2000+ | 2.64 грн |
| 5000+ | 2.41 грн |
| TZX5V6C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO35
Description: DIODE ZENER 5.6V 500MW DO35
на замовлення 18190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.39 грн |
| 22+ | 14.67 грн |
| 100+ | 7.99 грн |
| 500+ | 4.62 грн |
| 1000+ | 3.15 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.37 грн |
| TZX6V8C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 3.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25437 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 8.28 грн |
| 75+ | 4.31 грн |
| 182+ | 1.75 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.58 грн |
| UF4005-M3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.78 грн |
| 15+ | 22.65 грн |
| 100+ | 16.21 грн |
| 500+ | 11.49 грн |
| 1000+ | 9.98 грн |
| 2000+ | 9.27 грн |
| UG2B-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2915 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.10 грн |
| 10+ | 37.16 грн |
| 100+ | 23.99 грн |
| 500+ | 17.18 грн |
| 1000+ | 15.46 грн |
| 2000+ | 14.02 грн |
| US1B-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 6039 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.71 грн |
| 13+ | 26.47 грн |
| 100+ | 16.90 грн |
| 500+ | 11.95 грн |
| 1000+ | 10.69 грн |
| 2000+ | 9.62 грн |
| US1J-M3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 6257 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.53 грн |
| 24+ | 13.48 грн |
| 100+ | 11.48 грн |
| 500+ | 7.88 грн |
| US1K-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 4546 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.50 грн |
| 19+ | 17.14 грн |
| 100+ | 11.67 грн |
| 500+ | 8.94 грн |
| 1000+ | 7.08 грн |
| 2000+ | 6.39 грн |
| US1MHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.81 грн |
| 17+ | 19.22 грн |
| 100+ | 14.94 грн |
| 500+ | 10.84 грн |
| 1000+ | 8.20 грн |
| 2000+ | 7.88 грн |
| US1M-M3/61T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 53815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.36 грн |
| 23+ | 14.43 грн |
| 100+ | 11.47 грн |
| 500+ | 8.03 грн |
| USB260HM3/52T |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4134 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.26 грн |
| 13+ | 25.60 грн |
| V10P10HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.38 грн |
| 10+ | 44.10 грн |
| 100+ | 34.99 грн |
| 500+ | 25.53 грн |
| 1000+ | 22.48 грн |
| 2000+ | 21.19 грн |
| V10P10-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 3369 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.63 грн |
| 10+ | 53.58 грн |
| 100+ | 43.51 грн |
| 500+ | 31.93 грн |
| 1000+ | 27.62 грн |
| 2000+ | 26.66 грн |
| V10P20-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
на замовлення 4472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.95 грн |
| 10+ | 101.91 грн |
| 100+ | 73.42 грн |
| 500+ | 55.23 грн |
| V10P20-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
Description: DIODE SCHOTTKY 200V 2.4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2.4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 200 V
на замовлення 49108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 46.89 грн |
| 100+ | 34.53 грн |
| 500+ | 25.19 грн |
| 1000+ | 22.19 грн |
| 2000+ | 20.91 грн |
| V10P45-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4.4A TO277A
Description: DIODE SCHOTTKY 45V 4.4A TO277A
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.13 грн |
| 100+ | 44.56 грн |
| V10P45S-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 4.4A TO277A
Description: DIODE SCHOTTKY 45V 4.4A TO277A
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.73 грн |
| 10+ | 58.13 грн |
| 100+ | 44.56 грн |
| V12P6-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
Description: DIODE SCHOTTKY 60V 4.6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 12 A
Current - Reverse Leakage @ Vr: 2.9 mA @ 60 V
на замовлення 5327 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.87 грн |
| 10+ | 47.84 грн |
| 100+ | 36.56 грн |
| 500+ | 26.73 грн |












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