Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41621) > Сторінка 406 з 694
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BZX84C7V5-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 7.5V 300MW SOT23-3Current - Reverse Leakage @ Vr: 1 µA @ 5 V Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 7430 шт: термін постачання 21-31 дні (днів) |
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BZX84C8V2-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 300MW SOT23-3Current - Reverse Leakage @ Vr: 700 nA @ 5 V Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
товару немає в наявності |
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BZX84C9V1-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.1V 300MW SOT23-3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 6 V Power - Max: 300 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX85B100-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 100V 1.3W DO41 |
на замовлення 7757 шт: термін постачання 21-31 дні (днів) |
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BZX85B6V8-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.8V 1.3W DO204ALQualification: AEC-Q101 Grade: Automotive Impedance (Max) (Zzt): 3.5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±2% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 4 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) |
на замовлення 33035 шт: термін постачання 21-31 дні (днів) |
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BZX85C11-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 11V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24986 шт: термін постачання 21-31 дні (днів) |
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BZX85C3V3-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 40 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16937 шт: термін постачання 21-31 дні (днів) |
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BZX85C43-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 1.3W DO41Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 33 V Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 43 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Qualification: AEC-Q101 Grade: Automotive |
на замовлення 24702 шт: термін постачання 21-31 дні (днів) |
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BZX85C8V2-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 8.2V 1.3W DO204ALPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.3 W Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16502 шт: термін постачання 21-31 дні (днів) |
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DF005SA-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 1A DFSCurrent - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 50 V Supplier Device Package: DFS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 1045 шт: термін постачання 21-31 дні (днів) |
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DF1501S-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 1.5A DFSCurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 100 V Supplier Device Package: DFS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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DF1506S-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A DFSCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: DFS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 2223 шт: термін постачання 21-31 дні (днів) |
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DF1508S-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A DFSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DFS Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 2211 шт: термін постачання 21-31 дні (днів) |
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DFL1510S-E3/77 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFSCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: DFS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 5668 шт: термін постачання 21-31 дні (днів) |
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EGF1THE3/5CA | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EGF1THE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EGL34B-E3/98 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 100V 500MA DO213AACurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA (GL34) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Packaging: Cut Tape (CT) |
на замовлення 4728 шт: термін постачання 21-31 дні (днів) |
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EGL34D-E3/83 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 500MA DO213AACurrent - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA (GL34) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EGL34G-E3/83 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 400V 500MA DO213AACurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA (GL34) Current - Average Rectified (Io): 500mA Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Packaging: Cut Tape (CT) |
на замовлення 7288 шт: термін постачання 21-31 дні (днів) |
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EGP10C-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 22pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
на замовлення 9381 шт: термін постачання 21-31 дні (днів) |
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ES1AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6671 шт: термін постачання 21-31 дні (днів) |
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ES1BHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11852 шт: термін постачання 21-31 дні (днів) |
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ES1C-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 8432 шт: термін постачання 21-31 дні (днів) |
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ES1CHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V Qualification: AEC-Q101 |
на замовлення 41752 шт: термін постачання 21-31 дні (днів) |
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ES1PC-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 150V 1A DO220AACurrent - Reverse Leakage @ Vr: 5 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Cut Tape (CT) |
на замовлення 491 шт: термін постачання 21-31 дні (днів) |
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ES2B-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 2929 шт: термін постачання 21-31 дні (днів) |
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ES2BHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 2A DO214AAQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 303 шт: термін постачання 21-31 дні (днів) |
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ES2D-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 20138 шт: термін постачання 21-31 дні (днів) |
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ES2DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2130 шт: термін постачання 21-31 дні (днів) |
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ES2DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11243 шт: термін постачання 21-31 дні (днів) |
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ES2G-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 819 шт: термін постачання 21-31 дні (днів) |
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ES3B-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 2790 шт: термін постачання 21-31 дні (днів) |
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ES3DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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ES3DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1886 шт: термін постачання 21-31 дні (днів) |
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ES3G-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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ES3GHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2378 шт: термін постачання 21-31 дні (днів) |
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ESH1PC-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
на замовлення 11490 шт: термін постачання 21-31 дні (днів) |
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FESB16DT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 16A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GF1MHE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BAPackaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GL34D-E3/83 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 500MA DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GL41M-E3/97 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213ABCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 13901 шт: термін постачання 21-31 дні (днів) |
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GL41YHE3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.6KV 1A DO213ABCurrent - Reverse Leakage @ Vr: 10 µA @ 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AB Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 8pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Packaging: Cut Tape (CT) |
на замовлення 1519 шт: термін постачання 21-31 дні (днів) |
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GP10M-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO204ALSupplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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GP10T-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1300V 1A DO204ALCurrent - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 5pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
на замовлення 10953 шт: термін постачання 21-31 дні (днів) |
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GP15G-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1.5A DO204ACCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 3.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) |
на замовлення 9783 шт: термін постачання 21-31 дні (днів) |
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GP15M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.5A DO204ACCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 3.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) |
на замовлення 22699 шт: термін постачання 21-31 дні (днів) |
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GP30G-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO201ADCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
на замовлення 1461 шт: термін постачання 21-31 дні (днів) |
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GP30J-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO201ADCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
на замовлення 1374 шт: термін постачання 21-31 дні (днів) |
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GPP20J-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO204ACTechnology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 2A |
на замовлення 15375 шт: термін постачання 21-31 дні (днів) |
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GPP20M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 2A DO204ACVoltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AC (DO-15) Current - Average Rectified (Io): 2A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 34031 шт: термін постачання 21-31 дні (днів) |
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| GSD2004A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR GP 240V 225MA SOT23-3 Current - Reverse Leakage @ Vr: 100 nA @ 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 240 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 225mA Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GSD2004W-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 240V 225MA SOD123Current - Reverse Leakage @ Vr: 100 nA @ 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 240 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-123 Current - Average Rectified (Io): 225mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) |
на замовлення 6490 шт: термін постачання 21-31 дні (днів) |
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GSD2004WS-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 240V 225MA SOD323Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 240 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 225mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 22188 шт: термін постачання 21-31 дні (днів) |
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GSOT05C-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 16VC SOT23Power Line Protection: No Power - Peak Pulse: 480W Voltage - Clamping (Max) @ Ipp: 16V Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-23-3 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 30A (8/20µs) Capacitance @ Frequency: 260pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active |
на замовлення 24692 шт: термін постачання 21-31 дні (днів) |
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GSOT05C-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 16VC SOT233Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 480W Voltage - Clamping (Max) @ Ipp: 16V Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-23-3 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 30A (8/20µs) Capacitance @ Frequency: 260pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 17038 шт: термін постачання 21-31 дні (днів) |
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GSOT24-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24V 47V SOT23-3 |
на замовлення 14882 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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GSOT36-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 36VWM 71VC SOT23-3Power Line Protection: No Power - Peak Pulse: 248W Voltage - Clamping (Max) @ Ipp: 71V Voltage - Breakdown (Min): 39V Unidirectional Channels: 1 Supplier Device Package: SOT-23-3 Voltage - Reverse Standoff (Typ): 36V (Max) Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Capacitance @ Frequency: 52pF @ 1MHz Applications: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 14300 шт: термін постачання 21-31 дні (днів) |
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LL103A-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 200MA SOD80Package / Case: DO-213AC, MINI-MELF, SOD-80 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SOD-80 MiniMELF Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 50pF @ 0V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 10 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount |
на замовлення 16783 шт: термін постачання 21-31 дні (днів) |
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MBRB1560CT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 7.5A TO263ABCurrent - Reverse Leakage @ Vr: 1 mA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRB2045CT-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 45V 10A TO263ABCurrent - Reverse Leakage @ Vr: 100 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX84C7V5-E3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 7.5V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 7430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.70 грн |
| 52+ | 5.94 грн |
| 118+ | 2.60 грн |
| 500+ | 2.32 грн |
| 1000+ | 2.07 грн |
| 2000+ | 2.04 грн |
| 5000+ | 1.98 грн |
| BZX84C8V2-G3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 8.2V 300MW SOT23-3
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C9V1-HE3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 9.1V 300MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BZX85B100-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 100V 1.3W DO41
Description: DIODE ZENER 100V 1.3W DO41
на замовлення 7757 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.86 грн |
| 15+ | 21.56 грн |
| 100+ | 12.23 грн |
| 500+ | 7.60 грн |
| 1000+ | 5.83 грн |
| 2000+ | 5.07 грн |
| BZX85B6V8-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 3.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Description: DIODE ZENER 6.8V 1.3W DO204AL
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 3.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
на замовлення 33035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.32 грн |
| BZX85C11-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.22 грн |
| 10+ | 31.31 грн |
| 100+ | 20.16 грн |
| 500+ | 14.39 грн |
| 1000+ | 12.93 грн |
| 2000+ | 11.70 грн |
| BZX85C3V3-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 40 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.01 грн |
| 10+ | 31.62 грн |
| 50+ | 23.13 грн |
| 100+ | 19.11 грн |
| 500+ | 14.54 грн |
| BZX85C43-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ZENER 43V 1.3W DO41
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Qualification: AEC-Q101
Grade: Automotive
на замовлення 24702 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.24 грн |
| 33+ | 9.45 грн |
| 100+ | 6.33 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.07 грн |
| 2000+ | 3.67 грн |
| BZX85C8V2-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 1 µA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16502 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.80 грн |
| 10+ | 32.23 грн |
| 50+ | 23.56 грн |
| 100+ | 19.46 грн |
| 500+ | 14.80 грн |
| DF005SA-E3/77 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 50V 1A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 1045 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.33 грн |
| 10+ | 47.31 грн |
| 100+ | 30.95 грн |
| 500+ | 22.43 грн |
| DF1501S-E3/77 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 1.5A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 100V 1.5A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.04 грн |
| 50+ | 37.85 грн |
| 100+ | 31.49 грн |
| 500+ | 24.42 грн |
| DF1506S-E3/77 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A DFS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 600V 1.5A DFS
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 2223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 51.73 грн |
| 50+ | 38.31 грн |
| 100+ | 31.88 грн |
| 500+ | 24.74 грн |
| DF1508S-E3/77 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A DFS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A DFS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DFS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 2211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.04 грн |
| 50+ | 37.82 грн |
| 100+ | 31.47 грн |
| 500+ | 24.40 грн |
| DFL1510S-E3/77 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 1KV 1.5A DFS
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: DFS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 5668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 51.58 грн |
| 100+ | 33.90 грн |
| 500+ | 24.68 грн |
| EGF1THE3/5CA |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| EGF1THE3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| EGL34B-E3/98 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Description: DIODE STD 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
на замовлення 4728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.77 грн |
| 13+ | 24.38 грн |
| 100+ | 18.18 грн |
| 500+ | 13.16 грн |
| 1000+ | 11.80 грн |
| EGL34D-E3/83 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GP 200V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| EGL34G-E3/83 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Description: DIODE STD 400V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
на замовлення 7288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.77 грн |
| 13+ | 24.30 грн |
| 100+ | 18.10 грн |
| 500+ | 13.09 грн |
| 1000+ | 11.73 грн |
| 2000+ | 10.86 грн |
| EGP10C-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 150V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
на замовлення 9381 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.35 грн |
| 12+ | 25.90 грн |
| 100+ | 17.61 грн |
| 500+ | 12.96 грн |
| 1000+ | 11.78 грн |
| 2000+ | 10.77 грн |
| ES1AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.28 грн |
| 50+ | 19.09 грн |
| 100+ | 15.74 грн |
| 500+ | 11.89 грн |
| ES1BHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 12+ | 26.28 грн |
| 50+ | 19.09 грн |
| 100+ | 15.74 грн |
| 500+ | 11.89 грн |
| ES1C-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE STANDARD 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 8432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.57 грн |
| 24+ | 13.18 грн |
| 100+ | 11.44 грн |
| 500+ | 8.04 грн |
| 1000+ | 5.80 грн |
| 2000+ | 5.07 грн |
| ES1CHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE STANDARD 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
на замовлення 41752 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.32 грн |
| 19+ | 16.61 грн |
| 100+ | 13.20 грн |
| 500+ | 9.31 грн |
| ES1PC-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 150V 1A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
на замовлення 491 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.65 грн |
| 12+ | 26.06 грн |
| 100+ | 18.09 грн |
| ES2B-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 14+ | 22.09 грн |
| 100+ | 17.62 грн |
| 500+ | 12.55 грн |
| 1000+ | 11.27 грн |
| ES2BHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 100V 2A DO214AA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.72 грн |
| 12+ | 26.82 грн |
| 100+ | 21.19 грн |
| ES2D-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 20138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 32.61 грн |
| 50+ | 23.88 грн |
| 100+ | 19.73 грн |
| 500+ | 15.03 грн |
| ES2DHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.25 грн |
| 10+ | 40.30 грн |
| 50+ | 29.68 грн |
| 100+ | 24.61 грн |
| ES2DHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11243 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.25 грн |
| 10+ | 40.30 грн |
| 50+ | 29.68 грн |
| 100+ | 24.61 грн |
| 500+ | 18.90 грн |
| ES2G-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 819 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.59 грн |
| 10+ | 32.61 грн |
| 50+ | 23.88 грн |
| 100+ | 19.73 грн |
| 500+ | 15.03 грн |
| ES3B-E3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.20 грн |
| 10+ | 42.82 грн |
| 100+ | 27.88 грн |
| 500+ | 20.15 грн |
| 1000+ | 18.21 грн |
| ES3DHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.15 грн |
| 50+ | 41.70 грн |
| 100+ | 34.74 грн |
| ES3DHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.15 грн |
| 50+ | 41.70 грн |
| 100+ | 34.74 грн |
| 500+ | 27.02 грн |
| ES3G-E3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 44.04 грн |
| ES3GHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2378 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 58.13 грн |
| 50+ | 43.23 грн |
| 100+ | 36.03 грн |
| ESH1PC-M3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE STANDARD 150V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 11490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.18 грн |
| 14+ | 23.39 грн |
| 100+ | 18.95 грн |
| 500+ | 13.53 грн |
| 1000+ | 12.16 грн |
| FESB16DT-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 16A TO263AB
Description: DIODE GEN PURP 200V 16A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| GF1MHE3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| GL34D-E3/83 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GP 200V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| GL41M-E3/97 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 13901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 11+ | 29.18 грн |
| 100+ | 20.25 грн |
| 500+ | 14.84 грн |
| 1000+ | 12.06 грн |
| 2000+ | 10.78 грн |
| GL41YHE3/96 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1.6KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
на замовлення 1519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 11+ | 28.42 грн |
| 100+ | 19.34 грн |
| 500+ | 13.61 грн |
| GP10M-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Description: DIODE STANDARD 1000V 1A DO204AL
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.47 грн |
| 11+ | 28.27 грн |
| 100+ | 18.12 грн |
| 500+ | 12.88 грн |
| 1000+ | 11.55 грн |
| GP10T-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1300V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
на замовлення 10953 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.77 грн |
| 13+ | 25.14 грн |
| 100+ | 20.15 грн |
| 500+ | 14.41 грн |
| 1000+ | 11.57 грн |
| 2000+ | 11.36 грн |
| GP15G-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 3.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 3.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
на замовлення 9783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 39.01 грн |
| 100+ | 25.34 грн |
| 500+ | 18.26 грн |
| 1000+ | 16.48 грн |
| 2000+ | 14.98 грн |
| GP15M-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 3.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 3.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
на замовлення 22699 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.31 грн |
| 10+ | 36.34 грн |
| 100+ | 25.25 грн |
| 500+ | 18.50 грн |
| 1000+ | 15.04 грн |
| 2000+ | 13.44 грн |
| GP30G-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 62.09 грн |
| 100+ | 49.94 грн |
| 500+ | 37.04 грн |
| GP30J-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.82 грн |
| 10+ | 69.18 грн |
| 100+ | 53.79 грн |
| 500+ | 42.79 грн |
| GPP20J-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO204AC
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Description: DIODE GEN PURP 600V 2A DO204AC
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
на замовлення 15375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 22.15 грн |
| 22+ | 14.25 грн |
| 100+ | 9.55 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.22 грн |
| 2000+ | 5.64 грн |
| GPP20M-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 2A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 2A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 34031 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 28.87 грн |
| 100+ | 18.54 грн |
| 500+ | 13.18 грн |
| 1000+ | 11.81 грн |
| 2000+ | 10.67 грн |
| GSD2004A-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR GP 240V 225MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR GP 240V 225MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 225mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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| GSD2004W-E3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 240V 225MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 225mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 240V 225MA SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 225mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
на замовлення 6490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.87 грн |
| 40+ | 7.69 грн |
| 100+ | 5.13 грн |
| 500+ | 3.67 грн |
| 1000+ | 3.28 грн |
| 2000+ | 2.95 грн |
| 5000+ | 2.54 грн |
| GSD2004WS-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 240V 225MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 225mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 240V 225MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 240 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 225mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 22188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 15.03 грн |
| 32+ | 9.68 грн |
| 100+ | 6.48 грн |
| 500+ | 4.65 грн |
| 1000+ | 4.17 грн |
| GSOT05C-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC SOT23
Power Line Protection: No
Power - Peak Pulse: 480W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 260pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Description: TVS DIODE 5VWM 16VC SOT23
Power Line Protection: No
Power - Peak Pulse: 480W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 260pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
на замовлення 24692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.44 грн |
| 14+ | 22.02 грн |
| 100+ | 11.09 грн |
| 500+ | 9.22 грн |
| 1000+ | 7.18 грн |
| GSOT05C-HG3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 480W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 260pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 16VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 480W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Capacitance @ Frequency: 260pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 17038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.32 грн |
| 19+ | 16.15 грн |
| 100+ | 7.80 грн |
| 500+ | 7.22 грн |
| 1000+ | 7.12 грн |
| GSOT24-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24V 47V SOT23-3
Description: TVS DIODE 24V 47V SOT23-3
на замовлення 14882 шт:
термін постачання 21-31 дні (днів)
| GSOT36-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23-3
Power Line Protection: No
Power - Peak Pulse: 248W
Voltage - Clamping (Max) @ Ipp: 71V
Voltage - Breakdown (Min): 39V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 52pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE 36VWM 71VC SOT23-3
Power Line Protection: No
Power - Peak Pulse: 248W
Voltage - Clamping (Max) @ Ipp: 71V
Voltage - Breakdown (Min): 39V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 52pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 14300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 17+ | 18.28 грн |
| 100+ | 9.24 грн |
| 500+ | 7.68 грн |
| 1000+ | 5.98 грн |
| LL103A-GS18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 200MA SOD80
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 40V 200MA SOD80
Package / Case: DO-213AC, MINI-MELF, SOD-80
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-80 MiniMELF
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
на замовлення 16783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.90 грн |
| 20+ | 15.85 грн |
| 100+ | 9.97 грн |
| 500+ | 6.95 грн |
| 1000+ | 6.17 грн |
| 2000+ | 5.51 грн |
| 5000+ | 4.72 грн |
| MBRB1560CT-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 7.5A TO263AB
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOT 60V 7.5A TO263AB
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| MBRB2045CT-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 10A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.












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