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VS-65EPS08L-M3 Vishay General Semiconductor - Diodes Division vs-65epsl-m3.pdf Description: NEW INPUT DIODES - TO-247
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RGP02-17E-M3S/73 Vishay General Semiconductor - Diodes Division RGP02-xxE.pdf Description: DIODE GP 1.7KV 500MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
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RGP02-17E-E3S/73 Vishay General Semiconductor - Diodes Division rgp02.pdf Description: DIODE GP 1.7KV 500MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
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BZX84B2V7-E3-08 BZX84B2V7-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 2.7V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.39 грн
6000+2.92 грн
Мінімальне замовлення: 3000
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BZX84B2V7-E3-08 BZX84B2V7-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 2.7V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 8906 шт:
термін постачання 21-31 дні (днів)
31+11.23 грн
45+7.48 грн
100+3.87 грн
500+3.41 грн
1000+3.19 грн
Мінімальне замовлення: 31
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1.5SMC51AHE3_A/H 1.5SMC51AHE3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHE3_A/I 1.5SMC51AHE3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3_A/H 1.5SMC51AHM3_A/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3_A/I 1.5SMC51AHM3_A/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3/H 1.5SMC51AHM3/H Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3/I 1.5SMC51AHM3/I Vishay General Semiconductor - Diodes Division 15smc.pdf Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHE3_A/H P6SMB20AHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3_A/H P6SMB20AHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHE3_A/I P6SMB20AHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3_A/I P6SMB20AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3/H P6SMB20AHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AA
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P6SMB20AHM3/I P6SMB20AHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AA
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GP10J-E3/54 GP10J-E3/54 Vishay General Semiconductor - Diodes Division gp10a.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
5500+11.56 грн
Мінімальне замовлення: 5500
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GP10J-E3/54 GP10J-E3/54 Vishay General Semiconductor - Diodes Division gp10a.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 11971 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
12+28.28 грн
100+19.22 грн
500+14.14 грн
1000+12.86 грн
2000+11.76 грн
Мінімальне замовлення: 8
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VS-MBR2035CT-M3 VS-MBR2035CT-M3 Vishay General Semiconductor - Diodes Division vs-mbr2035_45ct-m3.pdf Description: DIODE ARR SCHOTT 35V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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SSC53L-E3/9AT SSC53L-E3/9AT Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
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SSC53L-E3/9AT SSC53L-E3/9AT Vishay General Semiconductor - Diodes Division ssc53l.pdf Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
на замовлення 1871 шт:
термін постачання 21-31 дні (днів)
8+47.50 грн
10+39.25 грн
100+27.16 грн
500+21.30 грн
1000+18.12 грн
Мінімальне замовлення: 8
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SMB10J36A-M3/52 Vishay General Semiconductor - Diodes Division smb10j40a.pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
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S1MHE3_A/H S1MHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+4.69 грн
3600+4.23 грн
5400+4.21 грн
Мінімальне замовлення: 1800
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S1MHE3_A/H S1MHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6416 шт:
термін постачання 21-31 дні (днів)
17+20.73 грн
25+13.47 грн
100+8.27 грн
500+6.12 грн
Мінімальне замовлення: 17
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SMCJ8.5AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE DO214AB
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SMCJ6.5AHE3_A/H SMCJ6.5AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHE3_A/I SMCJ6.5AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHM3_A/H SMCJ6.5AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5AHE3_A/H SMBJ8.5AHE3_A/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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TZS4686-GS08 TZS4686-GS08 Vishay General Semiconductor - Diodes Division TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+4.02 грн
5000+3.59 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
V1F6HM3/I Vishay General Semiconductor - Diodes Division v1f6.pdf Description: 1A 60V SMF TRENCH SKY RECT
товару немає в наявності
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TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+3.08 грн
5000+2.65 грн
7500+2.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TZM5260B-GS08 TZM5260B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 14476 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
65+5.16 грн
111+3.02 грн
500+2.70 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
TPSMB9.1AHE3_A/H TPSMB9.1AHE3_A/H Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 7.78V 13.4V DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
BAW27-TAP BAW27-TAP Vishay General Semiconductor - Diodes Division baw27.pdf Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
на замовлення 11847 шт:
термін постачання 21-31 дні (днів)
25+13.82 грн
36+9.40 грн
100+4.59 грн
500+3.60 грн
1000+2.50 грн
2000+2.17 грн
5000+1.98 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+19.71 грн
3000+17.12 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
EGF1B-E3/67A EGF1B-E3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+86.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GF1B-E3/5CA GF1B-E3/5CA Vishay General Semiconductor - Diodes Division gf1x.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2348 шт:
термін постачання 21-31 дні (днів)
8+47.50 грн
12+29.36 грн
100+22.28 грн
500+16.43 грн
1000+13.75 грн
2000+12.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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EGF1B-E3/5CA EGF1B-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4515 шт:
термін постачання 21-31 дні (днів)
6+67.36 грн
10+43.08 грн
100+33.89 грн
500+24.55 грн
1000+20.43 грн
2000+20.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1BHE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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В кошику  од. на суму  грн.
EGF1BHE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
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В кошику  од. на суму  грн.
EGF1B-1HE3_A/I EGF1B-1HE3_A/I Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
EGF1B-1HE3_A/H EGF1B-1HE3_A/H Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EGF1B-1HE3/5CA EGF1B-1HE3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EGF1B-1HE3/67A EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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CS2M-E3/H Vishay General Semiconductor - Diodes Division cs2dgjkm.pdf Description: DIODE GEN PURP 1KV 2A DO214AA
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SL12-E3/5AT SL12-E3/5AT Vishay General Semiconductor - Diodes Division sl12.pdf Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 16006 шт:
термін постачання 21-31 дні (днів)
9+38.86 грн
13+26.53 грн
100+13.38 грн
500+11.13 грн
1000+8.66 грн
2000+7.75 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BU2010L-7001M3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BU2010L-7001E3/51 Vishay General Semiconductor - Diodes Division Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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SM5S28ATHE3/I Vishay General Semiconductor - Diodes Division sm5s10atthrusm5s36at.pdf Description: TVS DIODE 28VWM 45.4VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
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TZMC18-GS18 TZMC18-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 18V 500MW SOD80
на замовлення 6905 шт:
термін постачання 21-31 дні (днів)
18+19.86 грн
22+15.72 грн
100+8.32 грн
500+5.14 грн
1000+3.50 грн
2000+3.15 грн
5000+2.70 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMCJ20AHE3_A/H SMCJ20AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ20AHE3_A/I SMCJ20AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P6SMB39AHM3_A/I P6SMB39AHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P6SMB39AHM3/H P6SMB39AHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39AHM3/I P6SMB39AHM3/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
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V12P12HM3_A/H V12P12HM3_A/H Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 3.9A TO277A
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VS-65EPS08L-M3 vs-65epsl-m3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
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RGP02-17E-M3S/73 RGP02-xxE.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.7KV 500MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
товару немає в наявності
В кошику  од. на суму  грн.
RGP02-17E-E3S/73 rgp02.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.7KV 500MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1700 V
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BZX84B2V7-E3-08 bzx84_series.pdf
BZX84B2V7-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.39 грн
6000+2.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX84B2V7-E3-08 bzx84_series.pdf
BZX84B2V7-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 8906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+11.23 грн
45+7.48 грн
100+3.87 грн
500+3.41 грн
1000+3.19 грн
Мінімальне замовлення: 31
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1.5SMC51AHE3_A/H 15smc.pdf
1.5SMC51AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHE3_A/I 15smc.pdf
1.5SMC51AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3_A/H 15smc.pdf
1.5SMC51AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3_A/I 15smc.pdf
1.5SMC51AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3/H 15smc.pdf
1.5SMC51AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC51AHM3/I 15smc.pdf
1.5SMC51AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHE3_A/H p6smb.pdf
P6SMB20AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3_A/H p6smb.pdf
P6SMB20AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHE3_A/I p6smb.pdf
P6SMB20AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3_A/I p6smb.pdf
P6SMB20AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB20AHM3/H p6smb.pdf
P6SMB20AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AA
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P6SMB20AHM3/I p6smb.pdf
P6SMB20AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AA
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GP10J-E3/54 gp10a.pdf
GP10J-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5500+11.56 грн
Мінімальне замовлення: 5500
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GP10J-E3/54 gp10a.pdf
GP10J-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 11971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
12+28.28 грн
100+19.22 грн
500+14.14 грн
1000+12.86 грн
2000+11.76 грн
Мінімальне замовлення: 8
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VS-MBR2035CT-M3 vs-mbr2035_45ct-m3.pdf
VS-MBR2035CT-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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SSC53L-E3/9AT ssc53l.pdf
SSC53L-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
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SSC53L-E3/9AT ssc53l.pdf
SSC53L-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 30 V
на замовлення 1871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.50 грн
10+39.25 грн
100+27.16 грн
500+21.30 грн
1000+18.12 грн
Мінімальне замовлення: 8
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SMB10J36A-M3/52 smb10j40a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AA
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S1MHE3_A/H s1.pdf
S1MHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+4.69 грн
3600+4.23 грн
5400+4.21 грн
Мінімальне замовлення: 1800
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S1MHE3_A/H s1.pdf
S1MHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+20.73 грн
25+13.47 грн
100+8.27 грн
500+6.12 грн
Мінімальне замовлення: 17
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SMCJ8.5AHE3_A/H smcj.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE DO214AB
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SMCJ6.5AHE3_A/H smcj.pdf
SMCJ6.5AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHE3_A/I smcj.pdf
SMCJ6.5AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.5AHM3_A/H smcj.pdf
SMCJ6.5AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5AHE3_A/H smbj.pdf
SMBJ8.5AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TZS4686-GS08 TZS4678_to_TZS4717_Rev1.9_22-Feb-18.pdf
TZS4686-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+4.02 грн
5000+3.59 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
V1F6HM3/I v1f6.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1A 60V SMF TRENCH SKY RECT
товару немає в наявності
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TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.08 грн
5000+2.65 грн
7500+2.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TZM5260B-GS08 tzm5221.pdf
TZM5260B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 14476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
65+5.16 грн
111+3.02 грн
500+2.70 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
TPSMB9.1AHE3_A/H tpsmb.pdf
TPSMB9.1AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.78V 13.4V DO214AA
товару немає в наявності
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BAW27-TAP baw27.pdf
BAW27-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 60V 600MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 100 nA @ 60 V
Qualification: AEC-Q101
на замовлення 11847 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.82 грн
36+9.40 грн
100+4.59 грн
500+3.60 грн
1000+2.50 грн
2000+2.17 грн
5000+1.98 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+19.71 грн
3000+17.12 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
EGF1B-E3/67A egf1a.pdf
EGF1B-E3/67A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.36 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GF1B-E3/5CA gf1x.pdf
GF1B-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.50 грн
12+29.36 грн
100+22.28 грн
500+16.43 грн
1000+13.75 грн
2000+12.72 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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EGF1B-E3/5CA egf1a.pdf
EGF1B-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+67.36 грн
10+43.08 грн
100+33.89 грн
500+24.55 грн
1000+20.43 грн
2000+20.25 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1BHE3_A/H egf1a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
товару немає в наявності
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EGF1BHE3_A/I egf1a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
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EGF1B-1HE3_A/I egf1a.pdf
EGF1B-1HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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EGF1B-1HE3_A/H egf1a.pdf
EGF1B-1HE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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EGF1B-1HE3/5CA egf1a.pdf
EGF1B-1HE3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EGF1B-1HE3/67A egf1a.pdf
EGF1B-1HE3/67A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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CS2M-E3/H cs2dgjkm.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AA
товару немає в наявності
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SL12-E3/5AT sl12.pdf
SL12-E3/5AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 445 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 16006 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.86 грн
13+26.53 грн
100+13.38 грн
500+11.13 грн
1000+8.66 грн
2000+7.75 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BU2010L-7001M3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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BU2010L-7001E3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE BRIDGE 20A 1000V
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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SM5S28ATHE3/I sm5s10atthrusm5s36at.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO218AC
Packaging: Tape & Reel (TR)
Package / Case: DO-218AC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
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TZMC18-GS18 tzm.pdf
TZMC18-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD80
на замовлення 6905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.86 грн
22+15.72 грн
100+8.32 грн
500+5.14 грн
1000+3.50 грн
2000+3.15 грн
5000+2.70 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMCJ20AHE3_A/H smcj.pdf
SMCJ20AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ20AHE3_A/I smcj.pdf
SMCJ20AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 46.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39AHM3_A/I p6smb.pdf
P6SMB39AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39AHM3/H p6smb.pdf
P6SMB39AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB39AHM3/I p6smb.pdf
P6SMB39AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Automotive
Qualification: AEC-Q101
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V12P12HM3_A/H v12p12.pdf
V12P12HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3.9A TO277A
товару немає в наявності
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