Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40412) > Сторінка 473 з 674
| Фото | Назва | Виробник | Інформація |
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GSD2004W-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 240V 225MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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GSD2004W-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 240V 225MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 240 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19728 шт: термін постачання 21-31 дні (днів) |
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MMSZ5226B-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 500MW SOD123Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOD-123 Part Status: Last Time Buy Power - Max: 500 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MMSZ5226B-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOD-123 Part Status: Last Time Buy Power - Max: 500 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11407 шт: термін постачання 21-31 дні (днів) |
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SMB10J15A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC DO214AA |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SMB10J15A-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC DO214AA |
на замовлення 2515 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SM8S14AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 14VWM 23.2VC DO218ABPackaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 284A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1750 шт: термін постачання 21-31 дні (днів) |
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BAS70-00-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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BAS70-00-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 70V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 82269 шт: термін постачання 21-31 дні (днів) |
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BZX84C43-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 300MW SOT23-3Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C43-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 43V 300MW SOT23-3Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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MMSZ4683-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW SOD123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMSZ4683-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3V 500MW SOD123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBR20H35CTHE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 35V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT55C20-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW SOD80Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BZT55C20-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 20V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-80 QuadroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 15 V Qualification: AEC-Q101 |
на замовлення 10495 шт: термін постачання 21-31 дні (днів) |
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SM6T7V5CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM6T7V5CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM6T7V5CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM6T7V5CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM6T7V5CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM6T7V5CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6.4VWM 11.3VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TZS4690-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW SOD80Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-80 QuadroMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TZS4690-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW SOD80Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SOD-80 QuadroMELF Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 10 µA @ 4 V |
на замовлення 1983 шт: термін постачання 21-31 дні (днів) |
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TZS4690B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW SOD80 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBRB16H35-E3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY TO-263AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR10H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 35V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBR16H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 35V 16A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRB16H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY TO-263AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRB7H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY TO-263AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF10H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY ITO-220AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MBRF16H35-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY ITO-220AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ZMY36-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 1W DO213ABTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 27 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ZMY36-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 36V 1W DO213ABTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-213AB Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 500 nA @ 27 V Qualification: AEC-Q101 |
на замовлення 3670 шт: термін постачання 21-31 дні (днів) |
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SB360L-5705E3/72 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB360-5300E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UF4005-E3S/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO204ALPackaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MSE1PDHM3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A MICROSMPPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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MSE1PDHM3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A MICROSMPPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 21780 шт: термін постачання 21-31 дні (днів) |
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MSE1PJHM3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A MICROSMPPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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MSE1PJHM3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A MICROSMPPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 60991 шт: термін постачання 21-31 дні (днів) |
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SML4752HE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 1W DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB510A01HM3_C/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 434VWM 698VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 860mA Voltage - Reverse Standoff (Typ): 434V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 485V Voltage - Clamping (Max) @ Ipp: 698V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB510A01HM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 434VWM 698VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 860mA Voltage - Reverse Standoff (Typ): 434V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 485V Voltage - Clamping (Max) @ Ipp: 698V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB510AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 434VWM 698VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 860mA Voltage - Reverse Standoff (Typ): 434V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 485V Voltage - Clamping (Max) @ Ipp: 698V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB510AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 434VWM 698VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 860mA Voltage - Reverse Standoff (Typ): 434V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 485V Voltage - Clamping (Max) @ Ipp: 698V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VS-45EPS08L-M3 | Vishay General Semiconductor - Diodes Division |
Description: NEW INPUT DIODES - TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-45APS08L-M3 | Vishay General Semiconductor - Diodes Division |
Description: NEW INPUT DIODES - TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VS-65APS08L-M3 | Vishay General Semiconductor - Diodes Division |
Description: NEW INPUT DIODES - TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ9.0CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9VWM 15.4VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMBJ9.0CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9VWM 15.4VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SML4759A-E3/5A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 62V 1W DO214ACTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SML4759A-E3/5A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 62V 1W DO214ACTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
на замовлення 2067 шт: термін постачання 21-31 дні (днів) |
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BZM55C24-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 24V 500MW MICROMELFPackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 220 Ohms Supplier Device Package: MicroMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 18 V Qualification: AEC-Q101 |
на замовлення 9596 шт: термін постачання 21-31 дні (днів) |
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GF1D-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214BAPackaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 7075 шт: термін постачання 21-31 дні (днів) |
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RGF1DHE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BAPackaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RGF1DHE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BAPackaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| GF1D-2HE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| GF1D-2HE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BAT54S-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 30V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Series Connection Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| GSD2004W-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 240V 225MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 240V 225MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.85 грн |
| 6000+ | 3.44 грн |
| 9000+ | 2.85 грн |
| GSD2004W-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 240V 225MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 240V 225MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.86 грн |
| 21+ | 15.10 грн |
| 100+ | 7.38 грн |
| 500+ | 5.78 грн |
| 1000+ | 4.01 грн |
| MMSZ5226B-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.73 грн |
| 6000+ | 3.21 грн |
| 9000+ | 3.02 грн |
| MMSZ5226B-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11407 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.97 грн |
| 30+ | 10.77 грн |
| 100+ | 6.70 грн |
| 500+ | 4.61 грн |
| 1000+ | 4.06 грн |
| SMB10J15A-E3/52 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AA
Description: TVS DIODE 15VWM 24.4VC DO214AA
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SMB10J15A-E3/52 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AA
Description: TVS DIODE 15VWM 24.4VC DO214AA
на замовлення 2515 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SM8S14AHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 320.11 грн |
| 10+ | 221.83 грн |
| 100+ | 163.71 грн |
| BAS70-00-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.90 грн |
| 6000+ | 4.51 грн |
| 9000+ | 3.90 грн |
| 30000+ | 3.59 грн |
| 75000+ | 2.98 грн |
| BAS70-00-HE3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 82269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.95 грн |
| 18+ | 18.32 грн |
| 100+ | 9.27 грн |
| 500+ | 7.10 грн |
| 1000+ | 5.26 грн |
| BZX84C43-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C43-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Description: DIODE ZENER 43V 300MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.98 грн |
| 51+ | 6.21 грн |
| 106+ | 2.97 грн |
| MMSZ4683-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD123
Description: DIODE ZENER 3V 500MW SOD123
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ4683-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 500MW SOD123
Description: DIODE ZENER 3V 500MW SOD123
товару немає в наявності
В кошику
од. на суму грн.
| MBR20H35CTHE3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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| BZT55C20-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 1.88 грн |
| 5000+ | 1.68 грн |
| BZT55C20-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
Description: DIODE ZENER 20V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Qualification: AEC-Q101
на замовлення 10495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.43 грн |
| 44+ | 7.31 грн |
| 100+ | 3.59 грн |
| 500+ | 2.81 грн |
| 1000+ | 1.96 грн |
| SM6T7V5CAHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| SM6T7V5CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| SM6T7V5CAHM3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| SM6T7V5CAHM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| SM6T7V5CAHM3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| SM6T7V5CAHM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
Description: TVS DIODE 6.4VWM 11.3VC DO214AA
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| TZS4690-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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| TZS4690-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Description: DIODE ZENER 5.6V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
на замовлення 1983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.31 грн |
| 16+ | 19.82 грн |
| 100+ | 10.53 грн |
| 500+ | 6.50 грн |
| 1000+ | 4.42 грн |
| TZS4690B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD80
Description: DIODE ZENER 5.6V 500MW SOD80
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| MBRB16H35-E3/81 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Description: DIODE SCHOTTKY TO-263AB
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| MBR10H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товару немає в наявності
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| MBR16H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE SCHOTTKY 35V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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од. на суму грн.
| MBRB16H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Description: DIODE SCHOTTKY TO-263AB
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| MBRB7H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY TO-263AB
Description: DIODE SCHOTTKY TO-263AB
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| MBRF10H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Description: DIODE SCHOTTKY ITO-220AC
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| MBRF16H35-E3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Description: DIODE SCHOTTKY ITO-220AC
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| ZMY36-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 8.35 грн |
| 3000+ | 7.32 грн |
| ZMY36-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
Description: DIODE ZENER 36V 1W DO213AB
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-213AB
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 500 nA @ 27 V
Qualification: AEC-Q101
на замовлення 3670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.85 грн |
| 16+ | 20.76 грн |
| 100+ | 14.08 грн |
| 500+ | 10.24 грн |
| SB360L-5705E3/72 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SB360-5300E3/73 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
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| UF4005-E3S/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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од. на суму грн.
| MSE1PDHM3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 4.93 грн |
| 9000+ | 3.93 грн |
| MSE1PDHM3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
на замовлення 21780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 18+ | 18.48 грн |
| 100+ | 9.33 грн |
| 500+ | 7.14 грн |
| 1000+ | 5.30 грн |
| 2000+ | 4.46 грн |
| MSE1PJHM3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 3.33 грн |
| 9000+ | 2.91 грн |
| MSE1PJHM3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 60991 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.97 грн |
| 26+ | 12.42 грн |
| 100+ | 6.28 грн |
| 500+ | 4.81 грн |
| 1000+ | 3.57 грн |
| 2000+ | 3.00 грн |
| SML4752HE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1W DO214AC
Description: DIODE ZENER 33V 1W DO214AC
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| P6SMB510A01HM3_C/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6SMB510A01HM3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6SMB510AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6SMB510AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 434VWM 698VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 860mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| VS-45EPS08L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Description: NEW INPUT DIODES - TO-247
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| VS-45APS08L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Description: NEW INPUT DIODES - TO-247
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| VS-65APS08L-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: NEW INPUT DIODES - TO-247
Description: NEW INPUT DIODES - TO-247
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| SMBJ9.0CAHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 15.4VC DO214AA
Description: TVS DIODE 9VWM 15.4VC DO214AA
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| SMBJ9.0CAHE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 15.4VC DO214AA
Description: TVS DIODE 9VWM 15.4VC DO214AA
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| SML4759A-E3/5A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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| SML4759A-E3/5A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: DIODE ZENER 62V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
на замовлення 2067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.46 грн |
| 11+ | 29.17 грн |
| 100+ | 19.92 грн |
| 500+ | 14.66 грн |
| 1000+ | 12.18 грн |
| BZM55C24-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
Description: DIODE ZENER 24V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 220 Ohms
Supplier Device Package: MicroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
на замовлення 9596 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.25 грн |
| 41+ | 7.78 грн |
| 100+ | 4.02 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.36 грн |
| GF1D-E3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 7075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.95 грн |
| 16+ | 19.89 грн |
| 100+ | 17.76 грн |
| 500+ | 13.68 грн |
| RGF1DHE3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| RGF1DHE3/67A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| GF1D-2HE3_A/H |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| GF1D-2HE3/67A |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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| BAT54S-HE3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTTKY 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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