Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41143) > Сторінка 54 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V10P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V12P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V30100S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A TO220-3Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 40362 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V60100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO220-3Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 465 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF30100S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A ITO220ABCurrent - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 1379 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF30100SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A ITO220ABCurrent - Reverse Leakage @ Vr: 350 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF40100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V ITO220ABCurrent - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS10P4-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 750pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 40 V |
на замовлення 1120 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P4L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Current - Reverse Leakage @ Vr: 250 µA @ 40 V |
на замовлення 543 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P6L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 11044 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
на замовлення 52608 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P3-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A TO277A |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 23933 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS8P2L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 263 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS8P3L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SS8PH10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 55344 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V10P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
на замовлення 38585 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V12P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
на замовлення 21925 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V8P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277ASpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 70 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 8A Technology: Schottky |
на замовлення 7223 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V60120C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 120V 30A TO220-3Current - Reverse Leakage @ Vr: 500 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 828 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
5KP5.0A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC P600Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 543A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
5KP15A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15VWM 24.4VC P600Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 205A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
MSP3V3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 11.5V DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.1V Voltage - Clamping (Max) @ Ipp: 11.5V Power - Peak Pulse: 150W Power Line Protection: No |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSP5.0A-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC DO219ADPower Line Protection: No Power - Peak Pulse: 100W Voltage - Clamping (Max) @ Ipp: 9.2V Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 1 Supplier Device Package: DO-219AD (MicroSMP) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 10.9A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Tape & Reel (TR) |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P2L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO219ADCurrent - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Tape & Reel (TR) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P3L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V |
на замовлення 576000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P4-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P5-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A DO219ADCurrent - Reverse Leakage @ Vr: 150 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Tape & Reel (TR) |
на замовлення 85500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P6-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219ADPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 157500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSP3V3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 11.5V DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.1V Voltage - Clamping (Max) @ Ipp: 11.5V Power - Peak Pulse: 150W Power Line Protection: No |
на замовлення 48388 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSP5.0A-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 9.2VC DO219ADPackaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 100W Voltage - Clamping (Max) @ Ipp: 9.2V Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 1 Supplier Device Package: DO-219AD (MicroSMP) Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 10.9A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-219AD |
на замовлення 126926 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P2L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 20 V |
на замовлення 44365 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P3-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO219ADTechnology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A |
на замовлення 30920 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P3L-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 250 µA @ 30 V |
на замовлення 579627 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P4-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 64167 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P5-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 1A DO219ADVoltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AD (MicroSMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AD Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 150 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A |
на замовлення 86627 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MSS1P6-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 158431 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| VSKD91\08P | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 100A ADDAPAK Packaging: Bulk Package / Case: ADD-A-PAK (3 + 4) Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: ADD-A-PAK® Voltage - DC Reverse (Vr) (Max): 800 V Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||
|
GF1M-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO214BACurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Tape & Reel (TR) |
на замовлення 36900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMA5J6.0A-E3/61 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 6VWM 10.3VC DO214ACPower Line Protection: No Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 10.3V Voltage - Breakdown (Min): 6.67V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 6V Current - Peak Pulse (10/1000µs): 48.5A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||||
|
2KBP08M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A KBPMPackaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 165°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
2W005G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 2A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 3888 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
2W01G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 2A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 4163 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
2W02G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 2A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1358 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
2W08G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 2A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 709 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
3KBP005M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 50V 3A KBPMPackaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
3KBP01M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 100V 3A KBPMPackaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
3KBP02M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 3A KBPMPackaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
3KBP04M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 3A KBPMPackaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
3KBP06M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3A KBPMPackaging: Tray Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
3KBP08M-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3A KBPMPackaging: Bulk Package / Case: 4-SIP, KBPM Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPM Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
B250C1000G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 1A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2132 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
B250C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 900MA WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2462 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
B40C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 65V 900MA WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Part Status: Active Voltage - Peak Reverse (Max): 65 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 65 V |
на замовлення 1865 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
B80C1000G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 125V 1A WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 125 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 125 V |
на замовлення 3574 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
B80C800G-E4/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 125V 900MA WOGPackaging: Bulk Package / Case: 4-Circular, WOG Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: WOG Voltage - Peak Reverse (Max): 125 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA Current - Reverse Leakage @ Vr: 10 µA @ 125 V |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
G2SB60-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 1.5A GBLPackaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
G2SB80-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 1.5A GBLPackaging: Bulk Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
G2SBA20-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL |
товару немає в наявності |
В кошику од. на суму грн. |
| V10P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 25.29 грн |
| 3000+ | 22.38 грн |
| 4500+ | 21.38 грн |
| 7500+ | 19.00 грн |
| 10500+ | 18.38 грн |
| 15000+ | 17.77 грн |
| V12P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 31.44 грн |
| 3000+ | 27.93 грн |
| 4500+ | 26.73 грн |
| 7500+ | 23.83 грн |
| 10500+ | 23.08 грн |
| 15000+ | 22.36 грн |
| V30100S-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 40362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.77 грн |
| 50+ | 54.44 грн |
| 100+ | 49.44 грн |
| 500+ | 39.99 грн |
| V60100C-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 207.39 грн |
| 10+ | 165.89 грн |
| 100+ | 132.06 грн |
| VF30100S-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 75.41 грн |
| 50+ | 58.47 грн |
| 100+ | 48.10 грн |
| 500+ | 40.76 грн |
| VF30100SG-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.69 грн |
| 50+ | 80.00 грн |
| 100+ | 63.39 грн |
| 500+ | 50.43 грн |
| 1000+ | 41.08 грн |
| VF40100C-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 172.82 грн |
| 10+ | 138.13 грн |
| 100+ | 109.96 грн |
| 500+ | 87.31 грн |
| SS10P4-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 1120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.35 грн |
| SS3P4L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
на замовлення 543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 62.06 грн |
| 10+ | 37.07 грн |
| 100+ | 24.06 грн |
| 500+ | 17.29 грн |
| SS3P6L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 11044 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.49 грн |
| 10+ | 36.31 грн |
| 100+ | 23.50 грн |
| 500+ | 16.88 грн |
| SS5P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 52608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.20 грн |
| 10+ | 39.34 грн |
| 100+ | 25.55 грн |
| 500+ | 18.41 грн |
| SS5P3-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
Description: DIODE SCHOTTKY 30V 5A TO277A
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.70 грн |
| 10+ | 40.09 грн |
| 100+ | 29.90 грн |
| 500+ | 22.05 грн |
| SS5P6-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 23933 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.49 грн |
| 10+ | 36.31 грн |
| 100+ | 23.50 грн |
| 500+ | 16.88 грн |
| SS8P2L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 263 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 40.77 грн |
| 100+ | 26.52 грн |
| SS8P3L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| SS8PH10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 55344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 16+ | 19.74 грн |
| 100+ | 19.20 грн |
| 500+ | 16.02 грн |
| V10P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 38585 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.12 грн |
| 10+ | 55.07 грн |
| 100+ | 36.33 грн |
| 500+ | 26.53 грн |
| V12P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
на замовлення 21925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.98 грн |
| 10+ | 66.87 грн |
| 100+ | 44.52 грн |
| 500+ | 32.78 грн |
| V8P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Technology: Schottky
Description: DIODE SCHOTTKY 100V 8A TO277A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Technology: Schottky
на замовлення 7223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 14+ | 22.09 грн |
| V60120C-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 30A TO220-3
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 120V 30A TO220-3
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 201.10 грн |
| 10+ | 160.75 грн |
| 100+ | 127.95 грн |
| 500+ | 101.60 грн |
| 5KP5.0A-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 543A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 543A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 5KP15A-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24.4VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 205A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MSP3V3-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 11.5V DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11.5V DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 4.11 грн |
| 9000+ | 3.57 грн |
| 13500+ | 3.38 грн |
| 22500+ | 2.96 грн |
| 31500+ | 2.84 грн |
| 45000+ | 2.72 грн |
| MSP5.0A-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AD
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM 9.2VC DO219AD
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 2.46 грн |
| MSS1P2L-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 5.14 грн |
| 9000+ | 4.49 грн |
| 13500+ | 4.25 грн |
| 22500+ | 3.74 грн |
| 31500+ | 3.59 грн |
| MSS1P3-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO219AD
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 1A DO219AD
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.15 грн |
| 9000+ | 3.01 грн |
| MSS1P3L-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
на замовлення 576000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.80 грн |
| 9000+ | 3.30 грн |
| 13500+ | 3.12 грн |
| 22500+ | 2.73 грн |
| 31500+ | 2.62 грн |
| 45000+ | 2.50 грн |
| MSS1P4-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.85 грн |
| 9000+ | 3.34 грн |
| 13500+ | 3.15 грн |
| 22500+ | 2.76 грн |
| 31500+ | 2.65 грн |
| 45000+ | 2.54 грн |
| MSS1P5-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO219AD
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 1A DO219AD
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
на замовлення 85500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.15 грн |
| 9000+ | 3.01 грн |
| MSS1P6-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 157500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.85 грн |
| 9000+ | 3.34 грн |
| 13500+ | 3.15 грн |
| 22500+ | 2.76 грн |
| 31500+ | 2.65 грн |
| 45000+ | 2.54 грн |
| MSP3V3-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 11.5V DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11.5V DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 87A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.1V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power - Peak Pulse: 150W
Power Line Protection: No
на замовлення 48388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.21 грн |
| 25+ | 12.41 грн |
| 100+ | 7.75 грн |
| 500+ | 5.36 грн |
| 1000+ | 4.74 грн |
| 2000+ | 4.22 грн |
| MSP5.0A-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 9.2VC DO219AD
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
Description: TVS DIODE 5VWM 9.2VC DO219AD
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 9.2V
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AD (MicroSMP)
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AD
на замовлення 126926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.35 грн |
| 41+ | 7.49 грн |
| 100+ | 3.07 грн |
| 500+ | 2.76 грн |
| MSS1P2L-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
Description: DIODE SCHOTTKY 20V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 20 V
на замовлення 44365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 20+ | 15.20 грн |
| 100+ | 9.55 грн |
| 500+ | 6.64 грн |
| 1000+ | 5.90 грн |
| 2000+ | 5.26 грн |
| MSS1P3-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO219AD
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Description: DIODE SCHOTTKY 30V 1A DO219AD
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
на замовлення 30920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 34+ | 8.93 грн |
| 100+ | 8.68 грн |
| 500+ | 6.04 грн |
| 1000+ | 4.20 грн |
| 2000+ | 3.83 грн |
| MSS1P3L-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
на замовлення 579627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 27+ | 11.57 грн |
| 100+ | 7.21 грн |
| 500+ | 4.98 грн |
| 1000+ | 4.40 грн |
| 2000+ | 3.91 грн |
| MSS1P4-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 64167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 69+ | 4.39 грн |
| 100+ | 4.30 грн |
| 500+ | 3.66 грн |
| MSS1P5-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO219AD
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Description: DIODE SCHOTTKY 50V 1A DO219AD
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
на замовлення 86627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 35+ | 8.85 грн |
| 100+ | 8.68 грн |
| 500+ | 5.97 грн |
| 1000+ | 3.74 грн |
| 2000+ | 3.40 грн |
| MSS1P6-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 158431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 87+ | 3.48 грн |
| VSKD91\08P |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE STANDARD 800V 100A ADDAPAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: ADD-A-PAK®
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| GF1M-E3/67A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 1000V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
на замовлення 36900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 12.15 грн |
| 3000+ | 11.51 грн |
| SMA5J6.0A-E3/61 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 48.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 6VWM 10.3VC DO214AC
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 6V
Current - Peak Pulse (10/1000µs): 48.5A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| 2KBP08M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 165°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| 2W005G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 3888 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 105.27 грн |
| 10+ | 64.30 грн |
| 100+ | 42.87 грн |
| 500+ | 31.60 грн |
| 1000+ | 28.82 грн |
| 3000+ | 25.30 грн |
| 2W01G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 4163 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.99 грн |
| 10+ | 42.51 грн |
| 100+ | 29.34 грн |
| 500+ | 21.94 грн |
| 1000+ | 20.11 грн |
| 3000+ | 17.75 грн |
| 2W02G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1358 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.13 грн |
| 10+ | 48.04 грн |
| 100+ | 33.26 грн |
| 500+ | 26.08 грн |
| 1000+ | 22.20 грн |
| 2W08G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 709 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.91 грн |
| 10+ | 48.87 грн |
| 100+ | 32.20 грн |
| 500+ | 23.47 грн |
| 3KBP005M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| 3KBP01M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| 3KBP02M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 3KBP04M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| 3KBP06M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3A KBPM
Packaging: Tray
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 3KBP08M-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3A KBPM
Packaging: Bulk
Package / Case: 4-SIP, KBPM
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPM
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| B250C1000G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.92 грн |
| 10+ | 35.02 грн |
| 100+ | 22.81 грн |
| 500+ | 16.48 грн |
| 1000+ | 14.88 грн |
| 2000+ | 13.54 грн |
| B250C800G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 64.42 грн |
| 10+ | 39.03 грн |
| 100+ | 22.29 грн |
| 500+ | 17.01 грн |
| 1000+ | 15.24 грн |
| B40C800G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 65V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
Description: BRIDGE RECT 1PHASE 65V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Part Status: Active
Voltage - Peak Reverse (Max): 65 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 65 V
на замовлення 1865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 54.62 грн |
| 100+ | 35.95 грн |
| 500+ | 26.20 грн |
| 1000+ | 23.78 грн |
| B80C1000G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 125V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
Description: BRIDGE RECT 1PHASE 125V 1A WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
на замовлення 3574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 10+ | 33.74 грн |
| 100+ | 26.33 грн |
| 500+ | 19.02 грн |
| 1000+ | 17.18 грн |
| 3000+ | 14.84 грн |
| B80C800G-E4/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 125V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
Description: BRIDGE RECT 1P 125V 900MA WOG
Packaging: Bulk
Package / Case: 4-Circular, WOG
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: WOG
Voltage - Peak Reverse (Max): 125 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
Current - Reverse Leakage @ Vr: 10 µA @ 125 V
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 64.42 грн |
| 10+ | 38.73 грн |
| 100+ | 25.25 грн |
| 500+ | 18.23 грн |
| G2SB60-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 600V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SB80-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| G2SBA20-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
Description: BRIDGE RECT 1PHASE 200V 1.5A GBL
товару немає в наявності
В кошику
од. на суму грн.

















