Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41622) > Сторінка 53 з 694
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VESD03A1C-02Z-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 10VC SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 78pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 10V Power - Peak Pulse: 95W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU10065S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BU-5S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU1006A5S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BU-5S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU1006A-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BUCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1006A-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BUCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1006-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Average Rectified (Io): 3.2 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU1006-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Average Rectified (Io): 3.2 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1010A5S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BU-5S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU1010A-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1010A-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BUPackaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1010-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.2A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Average Rectified (Io): 3.2 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU1010-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.2A BUTechnology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Average Rectified (Io): 3.2 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: isoCINK+™ BU |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU12065S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.4A BU-5S |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
|
BU1206-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.4A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
BU1206-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.4A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU12085S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BU-5S |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU1208-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.4A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 800 V Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU15085S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BU-5SSupplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU1508-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BUTechnology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
BU1508-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
BU1510-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.4A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A Current - Average Rectified (Io): 3.4 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU2006-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Package / Case: 4-SIP, BU Packaging: Bulk Mounting Type: Through Hole |
на замовлення 799 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
BU20085S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A BU-5SCurrent - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Average Rectified (Io): 3.5 A Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube Voltage - Peak Reverse (Max): 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU2008-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.5A BUPackaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
BU2008-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.5A BUPackaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
BU20105S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.5A BU-5SCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU2010-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.5A BUPackaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 618 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
BU2010-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 1KV 3.5A BUPackaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
BU25065S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.5A BU-5SCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU2506-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.5A BUPackaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU2506-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 600V 3.5A BUPackaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
BU25085S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.5A BU-5SCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: isoCINK+™ BU-5S Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
BU2508-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.5A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Tray Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
BU2508-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 800V 3.5A BUOperating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
|
BU2510-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.5A BUCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Average Rectified (Io): 3.5 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: isoCINK+™ BU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, BU Packaging: Bulk |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
BU2510-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.5A BU |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
GL41T-E3/1 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1300V 1A DO213ABPackaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1300 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
|
|
VS-100BGQ100 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTK 100V 100A POWIRTABPackaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 100A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 375 шт В кошику од. на суму грн. | ||||||||||||
|
SS10P4-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 750pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 40 V |
на замовлення 28500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P4L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Current - Reverse Leakage @ Vr: 250 µA @ 40 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P6L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
на замовлення 47518 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P3-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A TO277A |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
|
SS5P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS8P2L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 20V 8A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||
|
SS8P3L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 8A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 330pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 30 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS8PH10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277ACurrent - Reverse Leakage @ Vr: 2 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 140pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 49500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V10P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V12P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
на замовлення 36500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V30100S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A TO2203Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 26008 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
V60100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 30A TO220-3Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 465 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF30100S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A ITO220ABCurrent - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 1379 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF30100SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 30A ITO220ABCurrent - Reverse Leakage @ Vr: 350 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io): 30A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 1940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
VF40100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 100V ITO220ABCurrent - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS10P4-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 10A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 750pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 40 V |
на замовлення 28806 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P4L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 280pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Current - Reverse Leakage @ Vr: 250 µA @ 40 V |
на замовлення 1502 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS3P6L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 6525 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P10-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 100 V |
на замовлення 47518 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P3-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 5A TO277A |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SS5P6-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 5A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
на замовлення 36526 шт: термін постачання 21-31 дні (днів) |
|
| VESD03A1C-02Z-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 10VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| BU10065S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
товару немає в наявності
В кошику
од. на суму грн.
| BU1006A5S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU-5S
Description: BRIDGE RECT 1P 600V 3A BU-5S
товару немає в наявності
В кошику
од. на суму грн.
| BU1006A-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU1006A-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU1006-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU1006-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1P 600V 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU1010A5S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU-5S
Description: BRIDGE RECT 1P 1KV 3A BU-5S
товару немає в наявності
В кошику
од. на суму грн.
| BU1010A-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1P 1KV 3A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU1010A-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| BU1010-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1P 1KV 3.2A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU1010-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Description: BRIDGE RECT 1P 1KV 3.2A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Average Rectified (Io): 3.2 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU12065S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BU1206-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.91 грн |
| 10+ | 120.22 грн |
| 100+ | 88.42 грн |
| BU1206-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 600V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU12085S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
товару немає в наявності
В кошику
од. на суму грн.
| BU1208-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU15085S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BU1508-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Description: BRIDGE RECT 1P 800V 3.4A BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
на замовлення 860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| 20+ | 122.96 грн |
| 100+ | 121.84 грн |
| 500+ | 93.56 грн |
| BU1508-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1P 800V 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU1510-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 1KV 3.4A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Average Rectified (Io): 3.4 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU2006-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU
Packaging: Bulk
Mounting Type: Through Hole
Description: BRIDGE RECT 1P 600V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Package / Case: 4-SIP, BU
Packaging: Bulk
Mounting Type: Through Hole
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.69 грн |
| 10+ | 194.81 грн |
| 100+ | 156.59 грн |
| 500+ | 120.74 грн |
| BU20085S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Voltage - Peak Reverse (Max): 800 V
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Voltage - Peak Reverse (Max): 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BU2008-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 458.87 грн |
| 10+ | 296.67 грн |
| BU2008-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| BU20105S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Description: BRIDGE RECT 1P 1KV 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU2010-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.16 грн |
| 20+ | 273.09 грн |
| 100+ | 219.45 грн |
| 500+ | 172.25 грн |
| BU2010-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.16 грн |
| 10+ | 303.68 грн |
| 250+ | 197.25 грн |
| 500+ | 172.25 грн |
| 1000+ | 161.43 грн |
| BU25065S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Description: BRIDGE RECT 1P 600V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU2506-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| BU2506-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.5A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 306.97 грн |
| 10+ | 195.49 грн |
| 250+ | 123.50 грн |
| 500+ | 107.19 грн |
| BU25085S-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
Description: BRIDGE RECT 1P 800V 3.5A BU-5S
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: isoCINK+™ BU-5S
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BU2508-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Tray
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.87 грн |
| 10+ | 172.94 грн |
| 100+ | 134.48 грн |
| BU2508-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Description: BRIDGE RECT 1PHASE 800V 3.5A BU
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BU2510-E3/45 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
Description: BRIDGE RECT 1P 1KV 3.5A BU
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Average Rectified (Io): 3.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.53 грн |
| 10+ | 191.15 грн |
| 100+ | 156.59 грн |
| 500+ | 125.09 грн |
| BU2510-E3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.5A BU
Description: BRIDGE RECT 1P 1KV 3.5A BU
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GL41T-E3/1 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
Description: DIODE STANDARD 1300V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| VS-100BGQ100 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Description: DIODE SCHOTTK 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 100A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 375 шт
В кошику
од. на суму грн.
| SS10P4-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 28500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 27.47 грн |
| 3000+ | 24.33 грн |
| 4500+ | 23.25 грн |
| 7500+ | 20.68 грн |
| 10500+ | 20.00 грн |
| 15000+ | 19.35 грн |
| SS3P4L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 17.03 грн |
| SS3P6L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.12 грн |
| 4500+ | 13.45 грн |
| SS5P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 47518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 17.62 грн |
| 4500+ | 14.74 грн |
| SS5P3-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
Description: DIODE SCHOTTKY 30V 5A TO277A
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| SS5P6-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 17.08 грн |
| 4500+ | 14.25 грн |
| SS8P2L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 20V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| SS8P3L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Description: DIODE SCHOTTKY 30V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 330pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 16.98 грн |
| 4500+ | 14.18 грн |
| SS8PH10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 8A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 49500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 18.77 грн |
| 3000+ | 16.52 грн |
| 4500+ | 15.72 грн |
| 7500+ | 13.91 грн |
| 10500+ | 13.42 грн |
| 15000+ | 12.93 грн |
| V10P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 26.27 грн |
| 3000+ | 23.25 грн |
| 4500+ | 22.20 грн |
| 7500+ | 19.74 грн |
| 10500+ | 19.09 грн |
| 15000+ | 18.45 грн |
| V12P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
на замовлення 36500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 30.67 грн |
| 3000+ | 27.21 грн |
| 4500+ | 26.03 грн |
| 7500+ | 23.18 грн |
| 10500+ | 22.45 грн |
| 15000+ | 21.73 грн |
| V30100S-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A TO2203
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 26008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 171.68 грн |
| 10+ | 106.13 грн |
| 50+ | 80.50 грн |
| 100+ | 67.79 грн |
| 500+ | 54.17 грн |
| V60100C-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOT 100V 30A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.87 грн |
| 10+ | 167.08 грн |
| 100+ | 133.00 грн |
| VF30100S-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.95 грн |
| 50+ | 58.89 грн |
| 100+ | 48.45 грн |
| 500+ | 41.05 грн |
| VF30100SG-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE SCHOTTKY 100V 30A ITO220AB
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io): 30A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.43 грн |
| 50+ | 80.57 грн |
| 100+ | 63.84 грн |
| 500+ | 50.79 грн |
| 1000+ | 41.37 грн |
| VF40100C-E3/4W |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: DIODE ARR SCHOTT 100V ITO220AB
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.06 грн |
| 10+ | 139.12 грн |
| 100+ | 110.74 грн |
| 500+ | 87.94 грн |
| SS10P4-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
Description: DIODE SCHOTTKY 40V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 750pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 40 V
на замовлення 28806 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 59.50 грн |
| 100+ | 39.33 грн |
| 500+ | 28.78 грн |
| SS3P4L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 280pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Current - Reverse Leakage @ Vr: 250 µA @ 40 V
на замовлення 1502 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 38.93 грн |
| 50+ | 28.55 грн |
| 100+ | 23.64 грн |
| 500+ | 18.09 грн |
| SS3P6L-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 6525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 36.87 грн |
| 50+ | 27.02 грн |
| 100+ | 22.37 грн |
| 500+ | 17.12 грн |
| SS5P10-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
на замовлення 47518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.46 грн |
| 10+ | 39.92 грн |
| 50+ | 29.35 грн |
| 100+ | 24.32 грн |
| 500+ | 18.68 грн |
| SS5P3-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5A TO277A
Description: DIODE SCHOTTKY 30V 5A TO277A
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.05 грн |
| 10+ | 40.38 грн |
| 100+ | 30.12 грн |
| 500+ | 22.21 грн |
| SS5P6-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
на замовлення 36526 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.71 грн |
| 10+ | 36.87 грн |
| 50+ | 27.02 грн |
| 100+ | 22.37 грн |
| 500+ | 17.12 грн |











