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SMCJ6.5CA-E3/9AT SMCJ6.5CA-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ6.5CA-E3/9AT SMCJ6.5CA-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3489 шт:
термін постачання 21-31 дні (днів)
5+68.27 грн
10+40.75 грн
100+26.49 грн
500+19.10 грн
1000+17.24 грн
Мінімальне замовлення: 5
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P4SMA20AHE3_A/H P4SMA20AHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHE3_A/I P4SMA20AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3_A/I P4SMA20AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3_A/H P4SMA20AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3/H P4SMA20AHM3/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3/I P4SMA20AHM3/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ9.0AHE3_A/I SMCJ9.0AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KP9.0AHE3_A/C 5KP9.0AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 325A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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10TQ035S 10TQ035S Vishay General Semiconductor - Diodes Division 10TQ%2CS.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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TZM5260B-GS18 TZM5260B-GS18 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TZM5260B-GS18 TZM5260B-GS18 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
34+9.53 грн
48+6.42 грн
100+4.29 грн
500+3.06 грн
1000+2.73 грн
2000+2.45 грн
5000+2.10 грн
Мінімальне замовлення: 34
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MMSZ5263B-HE3-08 MMSZ5263B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 56V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
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MMSZ5263B-HE3-08 MMSZ5263B-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 56V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
на замовлення 14045 шт:
термін постачання 21-31 дні (днів)
19+17.47 грн
30+10.40 грн
100+6.49 грн
500+4.46 грн
1000+3.93 грн
Мінімальне замовлення: 19
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16CTQ080S 16CTQ080S Vishay General Semiconductor - Diodes Division 16CTQ%2CS%2C-1.pdf Description: DIODE ARRAY SCHOT 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-1N1183 VS-1N1183 Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 50 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+609.71 грн
10+484.07 грн
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VSSA310SHM3_A/I VSSA310SHM3_A/I Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
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VETH100A1DD1-G3-08 VETH100A1DD1-G3-08 Vishay General Semiconductor - Diodes Division veth100a1dd1.pdf Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VETH100A1DD1-G3-08 VETH100A1DD1-G3-08 Vishay General Semiconductor - Diodes Division veth100a1dd1.pdf Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9896 шт:
термін постачання 21-31 дні (днів)
16+19.85 грн
24+12.84 грн
100+6.08 грн
500+5.25 грн
1000+4.81 грн
2000+4.64 грн
5000+4.39 грн
Мінімальне замовлення: 16
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VETH100A1DD1HG3-08 VETH100A1DD1HG3-08 Vishay General Semiconductor - Diodes Division veth100a1dd1.pdf Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VETH100A1DD1HG3-08 VETH100A1DD1HG3-08 Vishay General Semiconductor - Diodes Division veth100a1dd1.pdf Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9288 шт:
термін постачання 21-31 дні (днів)
15+21.44 грн
23+13.76 грн
100+6.51 грн
500+5.67 грн
1000+5.22 грн
2000+5.05 грн
5000+4.80 грн
Мінімальне замовлення: 15
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V2P6XHM3/I V2P6XHM3/I Vishay General Semiconductor - Diodes Division v2p6x.pdf Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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SMC3K10CAHM3_A/H SMC3K10CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 176A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
850+39.14 грн
Мінімальне замовлення: 850
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SMC3K10CAHM3_A/H SMC3K10CAHM3_A/H Vishay General Semiconductor - Diodes Division smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 176A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)
3+115.91 грн
10+77.60 грн
100+52.77 грн
Мінімальне замовлення: 3
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P6SMB8.2AHE3_B/H P6SMB8.2AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB8.2AHE3_B/I P6SMB8.2AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB8.2AHM3_B/I P6SMB8.2AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB8.2AHM3_B/H P6SMB8.2AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
VS-GT300TD60S VS-GT300TD60S Vishay General Semiconductor - Diodes Division vs-gt300td60s.pdf Description: IGBT MOD 600V 580A INT-A-PAK
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.47V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 466 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 882 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 24.2 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SS2FH6-M3/H SS2FH6-M3/H Vishay General Semiconductor - Diodes Division ss2fh6.pdf Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.54 грн
6000+5.77 грн
9000+5.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SS2FH6-M3/H SS2FH6-M3/H Vishay General Semiconductor - Diodes Division ss2fh6.pdf Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 10919 шт:
термін постачання 21-31 дні (днів)
13+24.61 грн
20+15.60 грн
100+10.53 грн
500+7.63 грн
1000+6.88 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SS2FH6HM3/I SS2FH6HM3/I Vishay General Semiconductor - Diodes Division ss2fh6.pdf Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX384B56-E3-08 BZX384B56-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 56V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+3.49 грн
6000+3.01 грн
9000+2.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX384B56-E3-08 BZX384B56-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 56V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
29+11.11 грн
40+7.72 грн
100+3.74 грн
500+3.41 грн
1000+3.30 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
MMSZ5242C-HE3_A-18 MMSZ5242C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5242C-HE3_A-08 MMSZ5242C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MSX1PG-M3/89A MSX1PG-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 400VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
4500+4.79 грн
9000+3.55 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
MSX1PG-M3/89A MSX1PG-M3/89A Vishay General Semiconductor - Diodes Division msx1pb-msx1pd-msx1pg-msx1pj.pdf Description: TVS DIODE 400VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
17+18.81 грн
100+9.19 грн
500+7.19 грн
1000+5.00 грн
2000+4.33 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
S1FLG-GS08 S1FLG-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+3.15 грн
6000+2.90 грн
9000+2.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S1FLG-GS08 S1FLG-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
13+25.40 грн
19+16.82 грн
100+8.49 грн
500+6.49 грн
1000+4.82 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AS1FGHM3/H AS1FGHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 16323 шт:
термін постачання 21-31 дні (днів)
13+26.20 грн
16+19.95 грн
100+11.98 грн
500+10.41 грн
1000+7.08 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SEG10FGHM3/H SEG10FGHM3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+5.64 грн
6000+5.19 грн
9000+4.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SEG10FGHM3/H SEG10FGHM3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
15+21.10 грн
100+10.67 грн
500+8.17 грн
1000+6.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SEG10FG-M3/I SEG10FG-M3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SEG10FG-M3/I SEG10FG-M3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9937 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
17+18.96 грн
100+9.57 грн
500+7.33 грн
1000+5.44 грн
2000+4.58 грн
5000+4.30 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SEG10FG-M3/H SEG10FG-M3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.52 грн
6000+3.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SEG10FG-M3/H SEG10FG-M3/H Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 8410 шт:
термін постачання 21-31 дні (днів)
12+27.79 грн
17+18.96 грн
100+9.57 грн
500+7.33 грн
1000+5.44 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SEG10FGHM3/I SEG10FGHM3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SEG10FGHM3/I SEG10FGHM3/I Vishay General Semiconductor - Diodes Division seg10fg.pdf Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9780 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
15+21.10 грн
100+10.67 грн
500+8.17 грн
1000+6.06 грн
2000+5.10 грн
5000+4.80 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SE20FG-M3/H SE20FG-M3/H Vishay General Semiconductor - Diodes Division se20fd-se20fg-se20fj.pdf Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+5.08 грн
6000+4.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SE20FG-M3/H SE20FG-M3/H Vishay General Semiconductor - Diodes Division se20fd-se20fg-se20fj.pdf Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 13808 шт:
термін постачання 21-31 дні (днів)
10+32.55 грн
14+22.40 грн
100+11.28 грн
500+9.38 грн
1000+7.30 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AS1FG-M3/H AS1FG-M3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 17990 шт:
термін постачання 21-31 дні (днів)
10+32.55 грн
16+19.19 грн
100+12.18 грн
500+8.55 грн
1000+7.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SE15FGHM3/H SE15FGHM3/H Vishay General Semiconductor - Diodes Division se15fd-se15fg-se15fj.pdf Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+7.59 грн
6000+7.14 грн
9000+6.33 грн
30000+5.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SE15FGHM3/H SE15FGHM3/H Vishay General Semiconductor - Diodes Division se15fd-se15fg-se15fj.pdf Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
9+35.73 грн
15+20.95 грн
100+13.29 грн
500+9.35 грн
1000+8.34 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
1N6276AHE3_B/C 1N6276AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,16V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SB220-E3/73 SB220-E3/73 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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SB220-E3/73 SB220-E3/73 Vishay General Semiconductor - Diodes Division sb220.pdf Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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VLIN1616-02G-E3-08 VLIN1616-02G-E3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+5.79 грн
6000+5.33 грн
9000+4.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
VLIN1616-02G-E3-08 VLIN1616-02G-E3-08 Vishay General Semiconductor - Diodes Division vlin1616-02g.pdf Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+31.76 грн
15+21.64 грн
100+10.94 грн
500+8.38 грн
1000+6.22 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ6.5CA-E3/9AT smcj.pdf
SMCJ6.5CA-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ6.5CA-E3/9AT smcj.pdf
SMCJ6.5CA-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 133.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+68.27 грн
10+40.75 грн
100+26.49 грн
500+19.10 грн
1000+17.24 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
P4SMA20AHE3_A/H p4sma.pdf
P4SMA20AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHE3_A/I p4sma.pdf
P4SMA20AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3_A/I p4sma.pdf
P4SMA20AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3_A/H p4sma.pdf
P4SMA20AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3/H p4sma.pdf
P4SMA20AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA20AHM3/I p4sma.pdf
P4SMA20AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17.1VWM 27.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 14.4A
Voltage - Reverse Standoff (Typ): 17.1V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ9.0AHE3_A/I smcj.pdf
SMCJ9.0AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KP9.0AHE3_A/C 5kp8_5a.pdf
5KP9.0AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 325A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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10TQ035S 10TQ%2CS.pdf
10TQ035S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
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TZM5260B-GS18 tzm5221.pdf
TZM5260B-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
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TZM5260B-GS18 tzm5221.pdf
TZM5260B-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.53 грн
48+6.42 грн
100+4.29 грн
500+3.06 грн
1000+2.73 грн
2000+2.45 грн
5000+2.10 грн
Мінімальне замовлення: 34
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MMSZ5263B-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5263B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
MMSZ5263B-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5263B-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
на замовлення 14045 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.47 грн
30+10.40 грн
100+6.49 грн
500+4.46 грн
1000+3.93 грн
Мінімальне замовлення: 19
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16CTQ080S 16CTQ%2CS%2C-1.pdf
16CTQ080S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 80V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
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VS-1N1183 vs-1n1183series.pdf
VS-1N1183
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 50 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+609.71 грн
10+484.07 грн
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VSSA310SHM3_A/I vssa310s.pdf
VSSA310SHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
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VETH100A1DD1-G3-08 veth100a1dd1.pdf
VETH100A1DD1-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VETH100A1DD1-G3-08 veth100a1dd1.pdf
VETH100A1DD1-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9896 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+19.85 грн
24+12.84 грн
100+6.08 грн
500+5.25 грн
1000+4.81 грн
2000+4.64 грн
5000+4.39 грн
Мінімальне замовлення: 16
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VETH100A1DD1HG3-08 veth100a1dd1.pdf
VETH100A1DD1HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VETH100A1DD1HG3-08 veth100a1dd1.pdf
VETH100A1DD1HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC DFN10062B
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2B
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.44 грн
23+13.76 грн
100+6.51 грн
500+5.67 грн
1000+5.22 грн
2000+5.05 грн
5000+4.80 грн
Мінімальне замовлення: 15
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V2P6XHM3/I v2p6x.pdf
V2P6XHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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SMC3K10CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K10CAHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 176A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+39.14 грн
Мінімальне замовлення: 850
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SMC3K10CAHM3_A/H smc3k10cahm3_a_thru_smc3k120cahm3_a.pdf
SMC3K10CAHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 176A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.91 грн
10+77.60 грн
100+52.77 грн
Мінімальне замовлення: 3
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P6SMB8.2AHE3_B/H p6smb.pdf
P6SMB8.2AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB8.2AHE3_B/I p6smb.pdf
P6SMB8.2AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB8.2AHM3_B/I p6smb.pdf
P6SMB8.2AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB8.2AHM3_B/H p6smb.pdf
P6SMB8.2AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 49.6A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-GT300TD60S vs-gt300td60s.pdf
VS-GT300TD60S
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 580A INT-A-PAK
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.47V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 466 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 882 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 24.2 nF @ 25 V
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SS2FH6-M3/H ss2fh6.pdf
SS2FH6-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.54 грн
6000+5.77 грн
9000+5.50 грн
Мінімальне замовлення: 3000
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SS2FH6-M3/H ss2fh6.pdf
SS2FH6-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
на замовлення 10919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.61 грн
20+15.60 грн
100+10.53 грн
500+7.63 грн
1000+6.88 грн
Мінімальне замовлення: 13
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SS2FH6HM3/I ss2fh6.pdf
SS2FH6HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 60 V
Qualification: AEC-Q101
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BZX384B56-E3-08 bzx384.pdf
BZX384B56-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.49 грн
6000+3.01 грн
9000+2.83 грн
Мінімальне замовлення: 3000
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BZX384B56-E3-08 bzx384.pdf
BZX384B56-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 39.2 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.11 грн
40+7.72 грн
100+3.74 грн
500+3.41 грн
1000+3.30 грн
Мінімальне замовлення: 29
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MMSZ5242C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
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MMSZ5242C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5242C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Qualification: AEC-Q101
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MSX1PG-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PG-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 400VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+4.79 грн
9000+3.55 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
MSX1PG-M3/89A msx1pb-msx1pd-msx1pg-msx1pj.pdf
MSX1PG-M3/89A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 400VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
17+18.81 грн
100+9.19 грн
500+7.19 грн
1000+5.00 грн
2000+4.33 грн
Мінімальне замовлення: 12
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S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.15 грн
6000+2.90 грн
9000+2.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
S1FLG-GS08 s1flbdgjkm.pdf
S1FLG-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.40 грн
19+16.82 грн
100+8.49 грн
500+6.49 грн
1000+4.82 грн
Мінімальне замовлення: 13
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AS1FGHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FGHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 16323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.20 грн
16+19.95 грн
100+11.98 грн
500+10.41 грн
1000+7.08 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SEG10FGHM3/H seg10fg.pdf
SEG10FGHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.64 грн
6000+5.19 грн
9000+4.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SEG10FGHM3/H seg10fg.pdf
SEG10FGHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
15+21.10 грн
100+10.67 грн
500+8.17 грн
1000+6.06 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SEG10FG-M3/I seg10fg.pdf
SEG10FG-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
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SEG10FG-M3/I seg10fg.pdf
SEG10FG-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
17+18.96 грн
100+9.57 грн
500+7.33 грн
1000+5.44 грн
2000+4.58 грн
5000+4.30 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SEG10FG-M3/H seg10fg.pdf
SEG10FG-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.52 грн
6000+3.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SEG10FG-M3/H seg10fg.pdf
SEG10FG-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 8410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.79 грн
17+18.96 грн
100+9.57 грн
500+7.33 грн
1000+5.44 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SEG10FGHM3/I seg10fg.pdf
SEG10FGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SEG10FGHM3/I seg10fg.pdf
SEG10FGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 9780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
15+21.10 грн
100+10.67 грн
500+8.17 грн
1000+6.06 грн
2000+5.10 грн
5000+4.80 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SE20FG-M3/H se20fd-se20fg-se20fj.pdf
SE20FG-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.08 грн
6000+4.81 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SE20FG-M3/H se20fd-se20fg-se20fj.pdf
SE20FG-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.7A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 920 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 13808 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.55 грн
14+22.40 грн
100+11.28 грн
500+9.38 грн
1000+7.30 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
AS1FG-M3/H as1fd_fg_fj_fk_fm.pdf
AS1FG-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 17990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.55 грн
16+19.19 грн
100+12.18 грн
500+8.55 грн
1000+7.62 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SE15FGHM3/H se15fd-se15fg-se15fj.pdf
SE15FGHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.59 грн
6000+7.14 грн
9000+6.33 грн
30000+5.86 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SE15FGHM3/H se15fd-se15fg-se15fj.pdf
SE15FGHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 900 ns
Technology: Standard
Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.73 грн
15+20.95 грн
100+13.29 грн
500+9.35 грн
1000+8.34 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
1N6276AHE3_B/C 15ke.pdf
1N6276AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,16V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 66.7A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SB220-E3/73 sb220.pdf
SB220-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
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SB220-E3/73 sb220.pdf
SB220-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товару немає в наявності
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VLIN1616-02G-E3-08 vlin1616-02g.pdf
VLIN1616-02G-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.79 грн
6000+5.33 грн
9000+4.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
VLIN1616-02G-E3-08 vlin1616-02g.pdf
VLIN1616-02G-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 33VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.76 грн
15+21.64 грн
100+10.94 грн
500+8.38 грн
1000+6.22 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
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