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BZD27C3V6P-M3-08 BZD27C3V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21349 шт:
термін постачання 21-31 дні (днів)
14+25.91 грн
21+16.55 грн
100+8.04 грн
500+7.43 грн
1000+7.32 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
1400+18.54 грн
Мінімальне замовлення: 1400
В кошику  од. на суму  грн.
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2764 шт:
термін постачання 21-31 дні (днів)
8+49.23 грн
10+40.50 грн
100+28.13 грн
500+20.61 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMZG3796B-E3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
товару немає в наявності
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SMZG3796B-E3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
товару немає в наявності
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SMZG3796BHE3/5B SMZG3796BHE3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
товару немає в наявності
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SMZG3796BHE3/52 SMZG3796BHE3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
товару немає в наявності
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VS-12TQ040STRLHM3 VS-12TQ040STRLHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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VS-12TQ040STRRHM3 VS-12TQ040STRRHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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MBR1545CT MBR1545CT Vishay General Semiconductor - Diodes Division MBR15xxCT.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
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AU1FMHM3/H AU1FMHM3/H Vishay General Semiconductor - Diodes Division au1fd-au1fm.pdf Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 33239 шт:
термін постачання 21-31 дні (днів)
14+25.91 грн
20+17.13 грн
100+13.37 грн
500+9.76 грн
1000+8.70 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AS1FMHM3/H AS1FMHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 12628 шт:
термін постачання 21-31 дні (днів)
12+31.09 грн
17+20.29 грн
100+16.11 грн
500+11.37 грн
1000+10.05 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+14.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.91 грн
10+37.09 грн
25+34.60 грн
100+25.97 грн
250+24.12 грн
500+20.41 грн
1000+15.51 грн
2500+14.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+14.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+44.91 грн
10+37.09 грн
25+34.60 грн
100+25.97 грн
250+24.12 грн
500+20.41 грн
1000+15.51 грн
2500+14.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.11 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
10+37.67 грн
25+35.13 грн
100+26.37 грн
250+24.48 грн
500+20.72 грн
1000+15.75 грн
2500+14.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.11 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
10+37.67 грн
25+35.13 грн
100+26.37 грн
250+24.48 грн
500+20.72 грн
1000+15.75 грн
2500+14.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+16.80 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
7+50.95 грн
10+41.83 грн
25+39.05 грн
100+29.32 грн
250+27.23 грн
500+23.04 грн
1000+17.51 грн
2500+15.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+16.80 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
7+50.95 грн
10+41.83 грн
25+39.05 грн
100+29.32 грн
250+27.23 грн
500+23.04 грн
1000+17.51 грн
2500+15.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
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В кошику  од. на суму  грн.
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
5+69.95 грн
10+41.91 грн
25+35.09 грн
100+25.63 грн
250+22.05 грн
500+19.85 грн
1000+17.73 грн
2500+15.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMCJ90AHM3_A/H SMCJ90AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
SMCJ90AHM3_A/I SMCJ90AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ90AHE3_A/I SMCJ90AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+9.89 грн
6000+8.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
11+32.82 грн
13+25.70 грн
100+17.49 грн
500+12.81 грн
1000+11.09 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
750+11.73 грн
1500+11.06 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
8+44.04 грн
12+28.52 грн
100+22.44 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
VS-VSKDF500/06PBF VS-VSKDF500/06PBF Vishay General Semiconductor - Diodes Division vs-vskdf500-06pbf.pdf Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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SMBJ8.5AHM3/I SMBJ8.5AHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P6SMB11AHM3_B/I P6SMB11AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/I P6SMB11AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHM3_B/H P6SMB11AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB11AHE3_B/H P6SMB11AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V20PWM63-M3/I V20PWM63-M3/I Vishay General Semiconductor - Diodes Division v20pwm63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8846 шт:
термін постачання 21-31 дні (днів)
5+82.91 грн
10+54.97 грн
100+41.94 грн
500+30.75 грн
1000+26.35 грн
2000+26.27 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+7.46 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3330 шт:
термін постачання 21-31 дні (днів)
11+33.68 грн
16+21.79 грн
100+14.73 грн
500+10.79 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SMCJ45A-E3/9AT SMCJ45A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DZ23C3V3-HE3_A-08 DZ23C3V3-HE3_A-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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DZ23C3V3-HE3_A-18 DZ23C3V3-HE3_A-18 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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V15PM153HM3/I V15PM153HM3/I Vishay General Semiconductor - Diodes Division v15pm153.pdf Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
4+105.36 грн
10+63.95 грн
100+42.40 грн
500+31.08 грн
1000+28.28 грн
2000+25.91 грн
Мінімальне замовлення: 4
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V15K120C-M3/I V15K120C-M3/I Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120C-M3/H V15K120C-M3/H Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120CHM3/I V15K120CHM3/I Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120CHM3/H V15K120CHM3/H Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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GURB5H60-E3/45 GURB5H60-E3/45 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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XMC7K24CAHM3/I XMC7K24CAHM3/I Vishay General Semiconductor - Diodes Division xmc7k24ca.pdf Description: TVS DIODE 24VWM 24VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 7000W (7kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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XMC7K24CAHM3/I XMC7K24CAHM3/I Vishay General Semiconductor - Diodes Division xmc7k24ca.pdf Description: TVS DIODE 24VWM 24VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 7000W (7kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
3+130.40 грн
10+93.39 грн
100+65.94 грн
500+53.99 грн
1000+53.94 грн
Мінімальне замовлення: 3
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AR1FK-M3/H AR1FK-M3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
на замовлення 21125 шт:
термін постачання 21-31 дні (днів)
12+30.23 грн
19+18.13 грн
100+11.39 грн
500+7.97 грн
1000+7.09 грн
Мінімальне замовлення: 12
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BZD27C3V6P-M3-08 BZD27-M_Series.pdf
BZD27C3V6P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.91 грн
21+16.55 грн
100+8.04 грн
500+7.43 грн
1000+7.32 грн
Мінімальне замовлення: 14
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UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1400+18.54 грн
Мінімальне замовлення: 1400
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UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+49.23 грн
10+40.50 грн
100+28.13 грн
500+20.61 грн
Мінімальне замовлення: 8
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SMZG3796B-E3/52 smzg.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796B-E3/5B smzg.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/5B smzg.pdf
SMZG3796BHE3/5B
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/52 smzg.pdf
SMZG3796BHE3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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VS-12TQ040STRLHM3 vs-12tq035shm3.pdf
VS-12TQ040STRLHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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VS-12TQ040STRRHM3 vs-12tq035shm3.pdf
VS-12TQ040STRRHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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MBR1545CT MBR15xxCT.pdf
MBR1545CT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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AU1FMHM3/H au1fd-au1fm.pdf
AU1FMHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 33239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.91 грн
20+17.13 грн
100+13.37 грн
500+9.76 грн
1000+8.70 грн
Мінімальне замовлення: 14
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AS1FMHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FMHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 12628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+31.09 грн
17+20.29 грн
100+16.11 грн
500+11.37 грн
1000+10.05 грн
Мінімальне замовлення: 12
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V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.85 грн
Мінімальне замовлення: 6000
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V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
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V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.85 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
10+37.26 грн
25+35.06 грн
100+26.85 грн
250+24.94 грн
500+21.22 грн
1000+16.70 грн
2500+15.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+14.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.91 грн
10+37.09 грн
25+34.60 грн
100+25.97 грн
250+24.12 грн
500+20.41 грн
1000+15.51 грн
2500+14.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+14.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.91 грн
10+37.09 грн
25+34.60 грн
100+25.97 грн
250+24.12 грн
500+20.41 грн
1000+15.51 грн
2500+14.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.11 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
10+37.67 грн
25+35.13 грн
100+26.37 грн
250+24.48 грн
500+20.72 грн
1000+15.75 грн
2500+14.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.11 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
10+37.67 грн
25+35.13 грн
100+26.37 грн
250+24.48 грн
500+20.72 грн
1000+15.75 грн
2500+14.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+16.80 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.95 грн
10+41.83 грн
25+39.05 грн
100+29.32 грн
250+27.23 грн
500+23.04 грн
1000+17.51 грн
2500+15.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+16.80 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.95 грн
10+41.83 грн
25+39.05 грн
100+29.32 грн
250+27.23 грн
500+23.04 грн
1000+17.51 грн
2500+15.97 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.95 грн
10+41.91 грн
25+35.09 грн
100+25.63 грн
250+22.05 грн
500+19.85 грн
1000+17.73 грн
2500+15.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMCJ90AHM3_A/H smcj.pdf
SMCJ90AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ90AHM3_A/I smcj.pdf
SMCJ90AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ90AHE3_A/I smcj.pdf
SMCJ90AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.89 грн
6000+8.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+32.82 грн
13+25.70 грн
100+17.49 грн
500+12.81 грн
1000+11.09 грн
Мінімальне замовлення: 11
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RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+11.73 грн
1500+11.06 грн
Мінімальне замовлення: 750
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RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.04 грн
12+28.52 грн
100+22.44 грн
Мінімальне замовлення: 8
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VS-VSKDF500/06PBF vs-vskdf500-06pbf.pdf
VS-VSKDF500/06PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SMBJ8.5AHM3/I smbj.pdf
SMBJ8.5AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHM3_B/I p6smb.pdf
P6SMB11AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/I p6smb.pdf
P6SMB11AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHM3_B/H p6smb.pdf
P6SMB11AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/H p6smb.pdf
P6SMB11AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V20PWM63-M3/I v20pwm63.pdf
V20PWM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8846 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+82.91 грн
10+54.97 грн
100+41.94 грн
500+30.75 грн
1000+26.35 грн
2000+26.27 грн
Мінімальне замовлення: 5
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TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+7.46 грн
Мінімальне замовлення: 1800
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TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+33.68 грн
16+21.79 грн
100+14.73 грн
500+10.79 грн
Мінімальне замовлення: 11
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SMCJ45A-E3/9AT smcj.pdf
SMCJ45A-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DZ23C3V3-HE3_A-08 dz23_series.pdf
DZ23C3V3-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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DZ23C3V3-HE3_A-18 dz23_series.pdf
DZ23C3V3-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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V15PM153HM3/I v15pm153.pdf
V15PM153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+105.36 грн
10+63.95 грн
100+42.40 грн
500+31.08 грн
1000+28.28 грн
2000+25.91 грн
Мінімальне замовлення: 4
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V15K120C-M3/I v15k120c.pdf
V15K120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120C-M3/H v15k120c.pdf
V15K120C-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120CHM3/I v15k120c.pdf
V15K120CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120CHM3/H v15k120c.pdf
V15K120CHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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GURB5H60-E3/45
GURB5H60-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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XMC7K24CAHM3/I xmc7k24ca.pdf
XMC7K24CAHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 24VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 7000W (7kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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XMC7K24CAHM3/I xmc7k24ca.pdf
XMC7K24CAHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 24VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 180A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 7000W (7kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.40 грн
10+93.39 грн
100+65.94 грн
500+53.99 грн
1000+53.94 грн
Мінімальне замовлення: 3
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AR1FK-M3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FK-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 9.3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
на замовлення 21125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.23 грн
19+18.13 грн
100+11.39 грн
500+7.97 грн
1000+7.09 грн
Мінімальне замовлення: 12
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