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TPSMA30AHM3_B/H TPSMA30AHM3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMA30AHM3_B/I TPSMA30AHM3_B/I Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS22SHE3_B/H SS22SHE3_B/H Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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SS22SHE3_B/I SS22SHE3_B/I Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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40CPQ080 40CPQ080 Vishay General Semiconductor - Diodes Division 40CPQ80%2C100.pdf Description: DIODE ARR SCHOTT 80V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 80 V
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BZD27C3V6P-M3-08 BZD27C3V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+7.07 грн
6000+6.17 грн
9000+5.85 грн
15000+5.14 грн
21000+4.94 грн
Мінімальне замовлення: 3000
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BZD27C3V6P-M3-08 BZD27C3V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21349 шт:
термін постачання 21-31 дні (днів)
14+23.82 грн
21+15.21 грн
100+7.39 грн
500+6.83 грн
1000+6.73 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
1400+17.04 грн
Мінімальне замовлення: 1400
В кошику  од. на суму  грн.
UG4A-E3/54 UG4A-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2764 шт:
термін постачання 21-31 дні (днів)
8+45.25 грн
10+37.23 грн
100+25.86 грн
500+18.95 грн
Мінімальне замовлення: 8
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SMZG3796B-E3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796B-E3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: DIODE ZENER 20V 1.5W DO215AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/5B SMZG3796BHE3/5B Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/52 SMZG3796BHE3/52 Vishay General Semiconductor - Diodes Division smzg.pdf Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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VS-12TQ040STRLHM3 VS-12TQ040STRLHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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VS-12TQ040STRRHM3 VS-12TQ040STRRHM3 Vishay General Semiconductor - Diodes Division vs-12tq035shm3.pdf Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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MBR1545CT MBR1545CT Vishay General Semiconductor - Diodes Division MBR15xxCT.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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AU1FMHM3/H AU1FMHM3/H Vishay General Semiconductor - Diodes Division au1fd-au1fm.pdf Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 33239 шт:
термін постачання 21-31 дні (днів)
14+23.82 грн
20+15.75 грн
100+12.29 грн
500+8.97 грн
1000+8.00 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AS1FMHM3/H AS1FMHM3/H Vishay General Semiconductor - Diodes Division as1fd_fg_fj_fk_fm.pdf Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 12628 шт:
термін постачання 21-31 дні (днів)
12+28.58 грн
17+18.65 грн
100+14.81 грн
500+10.45 грн
1000+9.24 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103HM3/I V7N3M103HM3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3103HM3/I V7N3103HM3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153HM3/I V7N3M153HM3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+13.68 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63-M3/I V7N3M63-M3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+41.28 грн
10+34.10 грн
25+31.80 грн
100+23.88 грн
250+22.17 грн
500+18.76 грн
1000+14.26 грн
2500+13.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+13.68 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63-M3/I V7N3L63-M3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+41.28 грн
10+34.10 грн
25+31.80 грн
100+23.88 грн
250+22.17 грн
500+18.76 грн
1000+14.26 грн
2500+13.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+13.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103-M3/I V7N3M103-M3/I Vishay General Semiconductor - Diodes Division v7n3m103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+42.08 грн
10+34.63 грн
25+32.29 грн
100+24.24 грн
250+22.51 грн
500+19.05 грн
1000+14.48 грн
2500+13.20 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+13.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153-M3/I V7N3M153-M3/I Vishay General Semiconductor - Diodes Division v7n3m153.pdf Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
8+42.08 грн
10+34.63 грн
25+32.29 грн
100+24.24 грн
250+22.51 грн
500+19.05 грн
1000+14.48 грн
2500+13.20 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.45 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63HM3/I V7N3M63HM3/I Vishay General Semiconductor - Diodes Division v7n3m63.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
7+46.84 грн
10+38.45 грн
25+35.90 грн
100+26.95 грн
250+25.03 грн
500+21.18 грн
1000+16.10 грн
2500+14.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+15.45 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63HM3/I V7N3L63HM3/I Vishay General Semiconductor - Diodes Division v7n3l63_.pdf Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
7+46.84 грн
10+38.45 грн
25+35.90 грн
100+26.95 грн
250+25.03 грн
500+21.18 грн
1000+16.10 грн
2500+14.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V7N3103-M3/I V7N3103-M3/I Vishay General Semiconductor - Diodes Division v7n3103.pdf Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
5+64.31 грн
10+38.53 грн
25+32.26 грн
100+23.56 грн
250+20.27 грн
500+18.25 грн
1000+16.30 грн
2500+14.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMCJ90AHM3_A/H SMCJ90AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ90AHM3_A/I SMCJ90AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ90AHE3_A/I SMCJ90AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+9.09 грн
6000+8.12 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C7V5P-HE3-08 BZD27C7V5P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
11+30.17 грн
13+23.62 грн
100+16.08 грн
500+11.78 грн
1000+10.19 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
750+10.78 грн
1500+10.17 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
RS2JHE3_A/H RS2JHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
8+40.49 грн
12+26.22 грн
100+20.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
VS-VSKDF500/06PBF VS-VSKDF500/06PBF Vishay General Semiconductor - Diodes Division vs-vskdf500-06pbf.pdf Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ8.5AHM3/I SMBJ8.5AHM3/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB11AHM3_B/I P6SMB11AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB11AHE3_B/I P6SMB11AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
P6SMB11AHM3_B/H P6SMB11AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/H P6SMB11AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V20PWM63-M3/I V20PWM63-M3/I Vishay General Semiconductor - Diodes Division v20pwm63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8894 шт:
термін постачання 21-31 дні (днів)
4+80.18 грн
10+53.21 грн
100+40.60 грн
500+29.77 грн
1000+25.24 грн
2000+24.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+9.46 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
TPSMA10AHE3_B/H TPSMA10AHE3_B/H Vishay General Semiconductor - Diodes Division tpsma.pdf Description: TVS DIODE 8.65VWM 14.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3345 шт:
термін постачання 21-31 дні (днів)
10+31.76 грн
15+20.64 грн
100+13.97 грн
500+10.22 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ45A-E3/9AT SMCJ45A-E3/9AT Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DZ23C3V3-HE3_A-08 DZ23C3V3-HE3_A-08 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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DZ23C3V3-HE3_A-18 DZ23C3V3-HE3_A-18 Vishay General Semiconductor - Diodes Division dz23_series.pdf Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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V15PM153HM3/I V15PM153HM3/I Vishay General Semiconductor - Diodes Division v15pm153.pdf Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
4+96.85 грн
10+58.79 грн
100+38.98 грн
500+28.57 грн
1000+25.99 грн
2000+23.82 грн
Мінімальне замовлення: 4
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V15K120C-M3/I V15K120C-M3/I Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120C-M3/H V15K120C-M3/H Vishay General Semiconductor - Diodes Division v15k120c.pdf Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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TPSMA30AHM3_B/H tpsma.pdf
TPSMA30AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TPSMA30AHM3_B/I tpsma.pdf
TPSMA30AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 9.7A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS22SHE3_B/H ss22s.pdf
SS22SHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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SS22SHE3_B/I ss22s.pdf
SS22SHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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40CPQ080 40CPQ80%2C100.pdf
40CPQ080
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 80 V
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BZD27C3V6P-M3-08 BZD27-M_Series.pdf
BZD27C3V6P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.07 грн
6000+6.17 грн
9000+5.85 грн
15000+5.14 грн
21000+4.94 грн
Мінімальне замовлення: 3000
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BZD27C3V6P-M3-08 BZD27-M_Series.pdf
BZD27C3V6P-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 21349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.82 грн
21+15.21 грн
100+7.39 грн
500+6.83 грн
1000+6.73 грн
Мінімальне замовлення: 14
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UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1400+17.04 грн
Мінімальне замовлення: 1400
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UG4A-E3/54 ug4a.pdf
UG4A-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 2764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.25 грн
10+37.23 грн
100+25.86 грн
500+18.95 грн
Мінімальне замовлення: 8
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SMZG3796B-E3/52 smzg.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796B-E3/5B smzg.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 1.5W DO215AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-215AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/5B smzg.pdf
SMZG3796BHE3/5B
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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SMZG3796BHE3/52 smzg.pdf
SMZG3796BHE3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5W,20V 5%,SMB ZENER
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AA (SMBG)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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VS-12TQ040STRLHM3 vs-12tq035shm3.pdf
VS-12TQ040STRLHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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VS-12TQ040STRRHM3 vs-12tq035shm3.pdf
VS-12TQ040STRRHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
Qualification: AEC-Q101
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MBR1545CT MBR15xxCT.pdf
MBR1545CT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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AU1FMHM3/H au1fd-au1fm.pdf
AU1FMHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 33239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.82 грн
20+15.75 грн
100+12.29 грн
500+8.97 грн
1000+8.00 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
AS1FMHM3/H as1fd_fg_fj_fk_fm.pdf
AS1FMHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1000V 1.5A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 12628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.58 грн
17+18.65 грн
100+14.81 грн
500+10.45 грн
1000+9.24 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103HM3/I v7n3m103.pdf
V7N3M103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3103HM3/I v7n3103.pdf
V7N3103HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+14.57 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153HM3/I v7n3m153.pdf
V7N3M153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.49 грн
10+34.25 грн
25+32.23 грн
100+24.69 грн
250+22.93 грн
500+19.51 грн
1000+15.35 грн
2500+13.91 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+13.68 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63-M3/I v7n3m63.pdf
V7N3M63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.28 грн
10+34.10 грн
25+31.80 грн
100+23.88 грн
250+22.17 грн
500+18.76 грн
1000+14.26 грн
2500+13.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+13.68 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63-M3/I v7n3l63_.pdf
V7N3L63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.28 грн
10+34.10 грн
25+31.80 грн
100+23.88 грн
250+22.17 грн
500+18.76 грн
1000+14.26 грн
2500+13.00 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+13.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M103-M3/I v7n3m103.pdf
V7N3M103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 140 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.08 грн
10+34.63 грн
25+32.29 грн
100+24.24 грн
250+22.51 грн
500+19.05 грн
1000+14.48 грн
2500+13.20 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+13.89 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M153-M3/I v7n3m153.pdf
V7N3M153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.08 грн
10+34.63 грн
25+32.29 грн
100+24.24 грн
250+22.51 грн
500+19.05 грн
1000+14.48 грн
2500+13.20 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.45 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3M63HM3/I v7n3m63.pdf
V7N3M63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.84 грн
10+38.45 грн
25+35.90 грн
100+26.95 грн
250+25.03 грн
500+21.18 грн
1000+16.10 грн
2500+14.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+15.45 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
V7N3L63HM3/I v7n3l63_.pdf
V7N3L63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+46.84 грн
10+38.45 грн
25+35.90 грн
100+26.95 грн
250+25.03 грн
500+21.18 грн
1000+16.10 грн
2500+14.68 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
V7N3103-M3/I v7n3103.pdf
V7N3103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.31 грн
10+38.53 грн
25+32.26 грн
100+23.56 грн
250+20.27 грн
500+18.25 грн
1000+16.30 грн
2500+14.53 грн
Мінімальне замовлення: 5
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SMCJ90AHM3_A/H smcj.pdf
SMCJ90AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ90AHM3_A/I smcj.pdf
SMCJ90AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ90AHE3_A/I smcj.pdf
SMCJ90AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.09 грн
6000+8.12 грн
Мінімальне замовлення: 3000
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BZD27C7V5P-HE3-08 bzd27series.pdf
BZD27C7V5P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
на замовлення 28383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.17 грн
13+23.62 грн
100+16.08 грн
500+11.78 грн
1000+10.19 грн
Мінімальне замовлення: 11
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RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+10.78 грн
1500+10.17 грн
Мінімальне замовлення: 750
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RS2JHE3_A/H rs2a.pdf
RS2JHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.49 грн
12+26.22 грн
100+20.63 грн
Мінімальне замовлення: 8
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VS-VSKDF500/06PBF vs-vskdf500-06pbf.pdf
VS-VSKDF500/06PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 600V 772A INTAPAK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 104 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 772A (DC)
Supplier Device Package: INT-A-PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 500 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SMBJ8.5AHM3/I smbj.pdf
SMBJ8.5AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHM3_B/I p6smb.pdf
P6SMB11AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/I p6smb.pdf
P6SMB11AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHM3_B/H p6smb.pdf
P6SMB11AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB11AHE3_B/H p6smb.pdf
P6SMB11AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,11V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V20PWM63-M3/I v20pwm63.pdf
V20PWM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3000pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 35 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.18 грн
10+53.21 грн
100+40.60 грн
500+29.77 грн
1000+25.24 грн
2000+24.42 грн
Мінімальне замовлення: 4
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TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+9.46 грн
Мінімальне замовлення: 1800
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TPSMA10AHE3_B/H tpsma.pdf
TPSMA10AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.65VWM 14.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 27.6A
Voltage - Reverse Standoff (Typ): 8.65V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.76 грн
15+20.64 грн
100+13.97 грн
500+10.22 грн
Мінімальне замовлення: 10
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SMCJ45A-E3/9AT smcj.pdf
SMCJ45A-E3/9AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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DZ23C3V3-HE3_A-08 dz23_series.pdf
DZ23C3V3-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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DZ23C3V3-HE3_A-18 dz23_series.pdf
DZ23C3V3-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Qualification: AEC-Q101
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V15PM153HM3/I v15pm153.pdf
V15PM153HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 885pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 mA
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.85 грн
10+58.79 грн
100+38.98 грн
500+28.57 грн
1000+25.99 грн
2000+23.82 грн
Мінімальне замовлення: 4
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V15K120C-M3/I v15k120c.pdf
V15K120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V15K120C-M3/H v15k120c.pdf
V15K120C-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.8A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.8A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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