Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41148) > Сторінка 648 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SE30PAG-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO221BCPackaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||||
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SE30PAG-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO221BCPackaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5264B-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 46 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5264B-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 46 V |
на замовлення 2129 шт: термін постачання 21-31 дні (днів) |
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MMSZ5264B-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5264B-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5264C-HE3_A-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
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MMSZ5264C-HE3_A-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 60V 500MW SOD123Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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SML4744HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1W DO214ACTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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SML4744HE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 1W DO214ACTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84B33-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 300MW SOT23-3Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BZX84B33-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 33V 300MW SOT23-3Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| 5KP54AHE3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Voltage - Clamping (Max) @ Ipp: 87.1V Voltage - Breakdown (Min): 60V Unidirectional Channels: 1 Supplier Device Package: P600 Voltage - Reverse Standoff (Typ): 54V Current - Peak Pulse (10/1000µs): 57.4A Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: P600, Axial Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX384B10-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 200MW SOD323Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX384B10-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 200MW SOD323Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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VS-6CWQ03FNTRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 3.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A Current - Reverse Leakage @ Vr: 2 mA @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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VS-6CWQ03FNTRL-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 3.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A Current - Reverse Leakage @ Vr: 2 mA @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SML4748AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1W DO214ACTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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SML4748AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 22V 1W DO214ACTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V Qualification: AEC-Q101 |
на замовлення 1326 шт: термін постачання 21-31 дні (днів) |
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V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 150V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 150V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
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V9N3103-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
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V9N3202-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 200V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3202-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 200V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 60V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.7A Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.7A Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 150V DFN33A TMBS RECTQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 510pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 150V DFN33A TMBS RECTQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.4A Capacitance @ Vr, F: 510pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 220 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.8A Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 100V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3202HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 200V DFN33A TMBS RECTPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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V9N3202HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 9A, 200V DFN33A TMBS RECTPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MSX1PJ-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 600VWM MICROSMPPackaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 600V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Power Line Protection: No |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MSX1PJ-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 600VWM MICROSMPPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 600V Supplier Device Package: DO-219AD (MicroSMP) Unidirectional Channels: 1 Power Line Protection: No |
на замовлення 13515 шт: термін постачання 21-31 дні (днів) |
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PLZ6V8B-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.66V 960MW DO219ACTolerance: ±2.55% Packaging: Tape & Reel (TR) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.66 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V |
на замовлення 58500 шт: термін постачання 21-31 дні (днів) |
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PLZ6V8B-G3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 6.66V 960MW DO219ACTolerance: ±2.55% Packaging: Cut Tape (CT) Package / Case: DO-219AC Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.66 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-219AC (microSMF) Power - Max: 960 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V |
на замовлення 62962 шт: термін постачання 21-31 дні (днів) |
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SMF7V0A-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 12VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 843pF @ 1MHz Current - Peak Pulse (10/1000µs): 16.7A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SMF7V0A-E3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 12VC DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Capacitance @ Frequency: 843pF @ 1MHz Current - Peak Pulse (10/1000µs): 16.7A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 19024 шт: термін постачання 21-31 дні (днів) |
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SM8S14A-1HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 14VWM DO218ABPackaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 284A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM8S14A-1HE3/2D | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 14VWM 23.2VC DO218ABPackaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 284A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VS-2EFU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-2EFU06HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 8029 шт: термін постачання 21-31 дні (днів) |
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VS-2EFH01-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-2EFH01-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 5952 шт: термін постачання 21-31 дні (днів) |
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VS-2EFU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 100°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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VS-2EFU06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 2A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 100°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
на замовлення 9230 шт: термін постачання 21-31 дні (днів) |
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VETH100A203S-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 34VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.75pF @ 1MHz Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 34V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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VETH100A203S-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 34VC SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.75pF @ 1MHz Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 34V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9930 шт: термін постачання 21-31 дні (днів) |
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VETH100A203SHG3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 34VC SOT233Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.75pF @ 1MHz Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Clamping (Max) @ Ipp: 34V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. |
| SE30PAG-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| SE30PAG-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 3A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5264B-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMSZ5264B-E3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
на замовлення 2129 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 41+ | 7.41 грн |
| 100+ | 3.80 грн |
| 500+ | 3.36 грн |
| 1000+ | 3.17 грн |
| MMSZ5264B-HE3_A-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MMSZ5264B-HE3_A-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| MMSZ5264C-HE3_A-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| MMSZ5264C-HE3_A-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
Description: DIODE ZENER 60V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SML4744HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 15V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SML4744HE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 15V 1W DO214AC
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| BZX84B33-G3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.53 грн |
| 6000+ | 3.16 грн |
| 9000+ | 2.62 грн |
| BZX84B33-G3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
Description: DIODE ZENER 33V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 23.1 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.21 грн |
| 22+ | 13.92 грн |
| 100+ | 6.77 грн |
| 500+ | 5.30 грн |
| 1000+ | 3.68 грн |
| 5KP54AHE3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 57.4A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Bulk
Description: TVS DIODE
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Unidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 54V
Current - Peak Pulse (10/1000µs): 57.4A
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BZX384B10-G3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.07 грн |
| BZX384B10-G3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 200MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 20+ | 15.66 грн |
| 100+ | 7.64 грн |
| 500+ | 5.98 грн |
| 1000+ | 4.15 грн |
| 2000+ | 3.60 грн |
| 5000+ | 3.29 грн |
| VS-6CWQ03FNTRL-M3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 21.08 грн |
| VS-6CWQ03FNTRL-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
Description: DIODE ARR SCHOTT 30V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 mA @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.77 грн |
| 10+ | 46.30 грн |
| 100+ | 32.06 грн |
| 500+ | 25.14 грн |
| 1000+ | 21.39 грн |
| SML4748AHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Qualification: AEC-Q101
Description: DIODE ZENER 22V 1W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| SML4748AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Qualification: AEC-Q101
Description: DIODE ZENER 22V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 16.7 V
Qualification: AEC-Q101
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 59.70 грн |
| 10+ | 36.08 грн |
| 100+ | 23.36 грн |
| 500+ | 16.77 грн |
| V9N3L63-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 14.82 грн |
| V9N3L63-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 10+ | 34.87 грн |
| 25+ | 32.74 грн |
| 100+ | 25.09 грн |
| 250+ | 23.31 грн |
| 500+ | 19.84 грн |
| 1000+ | 15.61 грн |
| 2500+ | 14.14 грн |
| V9N3M63-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 14.82 грн |
| V9N3M63-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 10+ | 34.87 грн |
| 25+ | 32.74 грн |
| 100+ | 25.09 грн |
| 250+ | 23.31 грн |
| 500+ | 19.84 грн |
| 1000+ | 15.61 грн |
| 2500+ | 14.14 грн |
| V9N3M103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 15.20 грн |
| V9N3M103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 10+ | 35.78 грн |
| 25+ | 33.62 грн |
| 100+ | 25.74 грн |
| 250+ | 23.91 грн |
| 500+ | 20.35 грн |
| 1000+ | 16.01 грн |
| 2500+ | 14.51 грн |
| V9N3M153-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 17.49 грн |
| V9N3M153-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: 9A, 150V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.84 грн |
| 10+ | 44.40 грн |
| 25+ | 37.28 грн |
| 100+ | 27.35 грн |
| 250+ | 23.60 грн |
| 500+ | 21.30 грн |
| 1000+ | 19.07 грн |
| 2500+ | 17.06 грн |
| V9N3103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| V9N3103-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.27 грн |
| 10+ | 43.35 грн |
| 25+ | 36.40 грн |
| 100+ | 26.69 грн |
| 250+ | 23.04 грн |
| 500+ | 20.79 грн |
| 1000+ | 18.62 грн |
| 2500+ | 16.65 грн |
| V9N3202-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 15.97 грн |
| V9N3202-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.78 грн |
| 10+ | 37.60 грн |
| 25+ | 35.31 грн |
| 100+ | 27.05 грн |
| 250+ | 25.12 грн |
| 500+ | 21.38 грн |
| 1000+ | 16.82 грн |
| 2500+ | 15.25 грн |
| V9N3L63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 16.74 грн |
| V9N3L63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 10+ | 39.41 грн |
| 25+ | 37.01 грн |
| 100+ | 28.35 грн |
| 250+ | 26.33 грн |
| 500+ | 22.41 грн |
| 1000+ | 17.64 грн |
| 2500+ | 15.98 грн |
| V9N3M63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 16.64 грн |
| V9N3M63HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.35 грн |
| 10+ | 39.18 грн |
| 25+ | 36.79 грн |
| 100+ | 28.19 грн |
| 250+ | 26.18 грн |
| 500+ | 22.28 грн |
| 1000+ | 17.53 грн |
| 2500+ | 15.89 грн |
| V9N3103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.7A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.7A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 17.03 грн |
| V9N3103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.7A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.7A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 10+ | 40.09 грн |
| 25+ | 37.64 грн |
| 100+ | 28.84 грн |
| 250+ | 26.79 грн |
| 500+ | 22.80 грн |
| 1000+ | 17.94 грн |
| 2500+ | 16.26 грн |
| V9N3M153HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 9A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 19.40 грн |
| V9N3M153HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 9A, 150V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 510pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.13 грн |
| 10+ | 48.49 грн |
| 25+ | 40.79 грн |
| 100+ | 30.01 грн |
| 250+ | 25.96 грн |
| 500+ | 23.48 грн |
| 1000+ | 21.06 грн |
| 2500+ | 18.88 грн |
| V9N3M103HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 17.03 грн |
| V9N3M103HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 10+ | 40.09 грн |
| 25+ | 37.64 грн |
| 100+ | 28.84 грн |
| 250+ | 26.79 грн |
| 500+ | 22.80 грн |
| 1000+ | 17.94 грн |
| 2500+ | 16.26 грн |
| V9N3202HM3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 17.99 грн |
| V9N3202HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: 9A, 200V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 50.28 грн |
| 10+ | 42.36 грн |
| 25+ | 39.79 грн |
| 100+ | 30.47 грн |
| 250+ | 28.30 грн |
| 500+ | 24.09 грн |
| 1000+ | 18.95 грн |
| 2500+ | 17.18 грн |
| MSX1PJ-M3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
Description: TVS DIODE 600VWM MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.21 грн |
| 9000+ | 2.46 грн |
| MSX1PJ-M3/89A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 600VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
Description: TVS DIODE 600VWM MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 600V
Supplier Device Package: DO-219AD (MicroSMP)
Unidirectional Channels: 1
Power Line Protection: No
на замовлення 13515 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.85 грн |
| 24+ | 12.63 грн |
| 100+ | 6.16 грн |
| 500+ | 4.82 грн |
| 1000+ | 3.35 грн |
| 2000+ | 2.90 грн |
| PLZ6V8B-G3/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.66V 960MW DO219AC
Tolerance: ±2.55%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
Description: DIODE ZENER 6.66V 960MW DO219AC
Tolerance: ±2.55%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
на замовлення 58500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4500+ | 3.31 грн |
| 9000+ | 2.45 грн |
| 31500+ | 2.41 грн |
| PLZ6V8B-G3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.66V 960MW DO219AC
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
Description: DIODE ZENER 6.66V 960MW DO219AC
Tolerance: ±2.55%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.66 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 3.5 V
на замовлення 62962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 24+ | 13.01 грн |
| 100+ | 6.34 грн |
| 500+ | 4.96 грн |
| 1000+ | 3.45 грн |
| 2000+ | 2.99 грн |
| SMF7V0A-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.93 грн |
| 6000+ | 6.06 грн |
| 9000+ | 5.74 грн |
| 15000+ | 5.05 грн |
| SMF7V0A-E3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 843pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16.7A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 19024 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 45+ | 7.07 грн |
| 55+ | 5.52 грн |
| SM8S14A-1HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SM8S14A-1HE3/2D |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 23.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 284A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-2EFU06HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| VS-2EFU06HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Qualification: AEC-Q101
на замовлення 8029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 113.12 грн |
| 10+ | 90.25 грн |
| 100+ | 71.84 грн |
| 500+ | 60.87 грн |
| VS-2EFH01-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| VS-2EFH01-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 5952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.92 грн |
| 19+ | 16.79 грн |
| 100+ | 10.07 грн |
| 500+ | 8.16 грн |
| 1000+ | 7.27 грн |
| 2000+ | 6.80 грн |
| 5000+ | 6.23 грн |
| VS-2EFU06-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| VS-2EFU06-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 100°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
на замовлення 9230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 91.76 грн |
| 100+ | 72.99 грн |
| 500+ | 57.96 грн |
| 1000+ | 49.18 грн |
| 2000+ | 46.72 грн |
| 5000+ | 44.22 грн |
| VETH100A203S-G3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| VETH100A203S-G3-18 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.57 грн |
| 21+ | 15.05 грн |
| 100+ | 10.14 грн |
| 500+ | 7.34 грн |
| 1000+ | 5.71 грн |
| 2000+ | 5.54 грн |
| 5000+ | 5.28 грн |
| VETH100A203SHG3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 34VC SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.75pF @ 1MHz
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 34V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.













