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BZG05C12-M3-18 BZG05C12-M3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
товару немає в наявності
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BZG05C12-HM3-18 BZG05C12-HM3-18 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
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BZG05C12-E3-TR BZG05C12-E3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
товару немає в наявності
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BZG05C12-E3-TR BZG05C12-E3-TR Vishay General Semiconductor - Diodes Division BZG05C_Series.pdf Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
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SMAJ20CA-E3/5A SMAJ20CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ20CA-E3/5A SMAJ20CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 7266 шт:
термін постачання 21-31 дні (днів)
15+22.86 грн
20+15.73 грн
100+7.40 грн
500+6.42 грн
1000+5.74 грн
Мінімальне замовлення: 15
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EGF1A-E3/5CA EGF1A-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGF1A-E3/5CA EGF1A-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6204 шт:
термін постачання 21-31 дні (днів)
6+64.51 грн
10+40.50 грн
100+32.04 грн
500+23.22 грн
1000+19.46 грн
2000+19.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1THE3_A/H Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/H Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
6+60.43 грн
10+49.85 грн
100+34.52 грн
500+27.07 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1THE3_A/I Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/I Vishay General Semiconductor - Diodes Division egf1t.pdf Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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BU1510-M3/45 BU1510-M3/45 Vishay General Semiconductor - Diodes Division bu1506.pdf Description: BRIDGE RECT 1PHASE 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SML4749AHE3_A/I SML4749AHE3_A/I Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 24V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 BZX584C12-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 12V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 BZX584C12-HG3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 12V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
27+12.25 грн
38+8.41 грн
100+3.71 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
V35PWL63-M3/I V35PWL63-M3/I Vishay General Semiconductor - Diodes Division v35pwl63.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6235 шт:
термін постачання 21-31 дні (днів)
4+87.38 грн
10+59.68 грн
100+47.47 грн
500+35.10 грн
1000+32.06 грн
2000+31.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SM8S18CAHM3/I SM8S18CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S18CAHM3/I SM8S18CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
2+270.29 грн
10+188.96 грн
100+138.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SM8S18A-2HE3/2D SM8S18A-2HE3/2D Vishay General Semiconductor - Diodes Division SM8S10_thru_SM8S43A._Aug.31%2C2016.pdf Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V10PWL63C-M3/I V10PWL63C-M3/I Vishay General Semiconductor - Diodes Division v10pwl63c.pdf Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4444 шт:
термін постачання 21-31 дні (днів)
6+57.16 грн
10+39.40 грн
100+31.05 грн
500+22.56 грн
1000+19.37 грн
2000+18.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
V10PWL63-M3/I V10PWL63-M3/I Vishay General Semiconductor - Diodes Division v10pwl63.pdf Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
4+83.29 грн
10+50.33 грн
100+33.14 грн
500+24.15 грн
1000+21.91 грн
2000+20.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V10PWL63CHM3/I V10PWL63CHM3/I Vishay General Semiconductor - Diodes Division v10pwl63c.pdf Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8906 шт:
термін постачання 21-31 дні (днів)
4+89.83 грн
10+54.57 грн
100+36.02 грн
500+26.34 грн
1000+23.94 грн
2000+22.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V10PWL63HM3/I V10PWL63HM3/I Vishay General Semiconductor - Diodes Division v10pwl63.pdf Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4445 шт:
термін постачання 21-31 дні (днів)
5+73.49 грн
10+47.65 грн
100+38.97 грн
500+28.58 грн
1000+25.86 грн
2000+24.44 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V20PWL63-M3/I V20PWL63-M3/I Vishay General Semiconductor - Diodes Division v20pwl63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8377 шт:
термін постачання 21-31 дні (днів)
4+96.36 грн
10+58.58 грн
100+38.83 грн
500+28.48 грн
1000+25.91 грн
2000+24.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V20PWL63C-M3/I V20PWL63C-M3/I Vishay General Semiconductor - Diodes Division v20pwl63c.pdf Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
4+102.07 грн
10+62.36 грн
100+41.47 грн
500+30.49 грн
1000+27.78 грн
2000+26.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V20PWL63HM3/I V20PWL63HM3/I Vishay General Semiconductor - Diodes Division v20pwl63.pdf Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
4+92.28 грн
10+57.88 грн
100+45.43 грн
500+33.52 грн
1000+30.59 грн
2000+29.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V20PWL63CHM3/I V20PWL63CHM3/I Vishay General Semiconductor - Diodes Division v20pwl63c.pdf Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7690 шт:
термін постачання 21-31 дні (днів)
3+110.24 грн
10+69.04 грн
100+48.53 грн
500+35.91 грн
1000+32.81 грн
2000+32.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V40PWL63C-M3/I V40PWL63C-M3/I Vishay General Semiconductor - Diodes Division v40pwl63c.pdf Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8995 шт:
термін постачання 21-31 дні (днів)
3+129.84 грн
10+79.81 грн
100+53.72 грн
500+39.92 грн
1000+36.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V35PWL63HM3/I V35PWL63HM3/I Vishay General Semiconductor - Diodes Division v35pwl63.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
4+102.89 грн
10+70.38 грн
100+55.60 грн
500+41.38 грн
1000+38.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V40PWL63CHM3/I V40PWL63CHM3/I Vishay General Semiconductor - Diodes Division v40pwl63c.pdf Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)
3+120.04 грн
10+79.74 грн
100+62.97 грн
500+47.10 грн
1000+45.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MMSZ5239C-HE3_A-08 MMSZ5239C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
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MMSZ5239C-HE3_A-18 MMSZ5239C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
товару немає в наявності
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BZT52C68-HE3_A-08 BZT52C68-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
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BZT52C68-HE3_A-18 BZT52C68-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
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SMAJ48CA-E3/5A SMAJ48CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SMAJ48CA-E3/5A SMAJ48CA-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 7378 шт:
термін постачання 21-31 дні (днів)
13+26.13 грн
19+16.99 грн
100+11.44 грн
500+8.31 грн
1000+7.50 грн
2000+6.81 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BZX84C75-HE3_A-08 BZX84C75-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 75V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Qualification: AEC-Q101
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BZX84C75-HE3_A-18 BZX84C75-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 75V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Qualification: AEC-Q101
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VS-A5PH3006L-N3 VS-A5PH3006L-N3 Vishay General Semiconductor - Diodes Division vs-a5ph3006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-A5PX3006L-N3 VS-A5PX3006L-N3 Vishay General Semiconductor - Diodes Division vs-a5px3006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-A5PX6006L-N3 VS-A5PX6006L-N3 Vishay General Semiconductor - Diodes Division vs-a5px6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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VS-A5PH6006L-N3 VS-A5PH6006L-N3 Vishay General Semiconductor - Diodes Division vs-a5ph6006l-n3.pdf Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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5KP28AHE3_A/C 5KP28AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170AHM3_A/H P4SMA170AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170AHM3_A/I P4SMA170AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V10K60DU-M3/I V10K60DU-M3/I Vishay General Semiconductor - Diodes Division v10k60du.pdf Description: DIODE ARR SCHOTT 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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V10KM45DU-M3/I V10KM45DU-M3/I Vishay General Semiconductor - Diodes Division v10km45du.pdf Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10K100DU-M3/I V10K100DU-M3/I Vishay General Semiconductor - Diodes Division v10k100du.pdf Description: DIODE ARR SCHOTT 100V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V10K120C-M3/I V10K120C-M3/I Vishay General Semiconductor - Diodes Division v10k120c.pdf Description: DIODE ARR SCHOTT 120V 3.6A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Qualification: AEC-Q101
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V10KL45C-M3/I V10KL45C-M3/I Vishay General Semiconductor - Diodes Division v10kl45c.pdf Description: DIODE ARR SCHOT 45V 5.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
Qualification: AEC-Q101
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V10K60DUHM3/I V10K60DUHM3/I Vishay General Semiconductor - Diodes Division v10k60du.pdf Description: DIODE ARR SCHOTT 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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V10KM45DU-M3/H V10KM45DU-M3/H Vishay General Semiconductor - Diodes Division v10km45du.pdf Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10K120C-M3/H V10K120C-M3/H Vishay General Semiconductor - Diodes Division v10k120c.pdf Description: DIODE ARR SCHOTT 120V 3.6A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Qualification: AEC-Q101
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V10KM45C-M3/H V10KM45C-M3/H Vishay General Semiconductor - Diodes Division v10km45c.pdf Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Qualification: AEC-Q101
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V10KM45DUHM3/I V10KM45DUHM3/I Vishay General Semiconductor - Diodes Division v10km45du.pdf Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10KL45C-M3/H V10KL45C-M3/H Vishay General Semiconductor - Diodes Division v10kl45c.pdf Description: DIODE ARR SCHOT 45V 5.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
Qualification: AEC-Q101
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VTVS11ASMF-HM3-08 VTVS11ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+9.42 грн
6000+8.27 грн
9000+7.86 грн
15000+6.94 грн
21000+6.69 грн
Мінімальне замовлення: 3000
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VTVS11ASMF-HM3-08 VTVS11ASMF-HM3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29285 шт:
термін постачання 21-31 дні (днів)
8+41.65 грн
13+24.77 грн
100+15.80 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
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VTVS11ASMF-M3-18 VTVS11ASMF-M3-18 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZG05C12-M3-18 bzg05c-m-series.pdf
BZG05C12-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
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BZG05C12-HM3-18 bzg05c-m-series.pdf
BZG05C12-HM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5.42%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
Qualification: AEC-Q101
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BZG05C12-E3-TR BZG05C_Series.pdf
BZG05C12-E3-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
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BZG05C12-E3-TR BZG05C_Series.pdf
BZG05C12-E3-TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.25W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.1 V
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SMAJ20CA-E3/5A smaj50a.pdf
SMAJ20CA-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ20CA-E3/5A smaj50a.pdf
SMAJ20CA-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 7266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.86 грн
20+15.73 грн
100+7.40 грн
500+6.42 грн
1000+5.74 грн
Мінімальне замовлення: 15
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EGF1A-E3/5CA egf1a.pdf
EGF1A-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGF1A-E3/5CA egf1a.pdf
EGF1A-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.51 грн
10+40.50 грн
100+32.04 грн
500+23.22 грн
1000+19.46 грн
2000+19.15 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1THE3_A/H egf1t.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/H egf1t.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.43 грн
10+49.85 грн
100+34.52 грн
500+27.07 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
EGF1THE3_A/I egf1t.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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EGF1THE3_A/I egf1t.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
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BU1510-M3/45 bu1506.pdf
BU1510-M3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 15A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SML4749AHE3_A/I sml4738.pdf
SML4749AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 bzx584c-series.pdf
BZX584C12-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX584C12-HG3-08 bzx584c-series.pdf
BZX584C12-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.25 грн
38+8.41 грн
100+3.71 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
V35PWL63-M3/I v35pwl63.pdf
V35PWL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6235 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.38 грн
10+59.68 грн
100+47.47 грн
500+35.10 грн
1000+32.06 грн
2000+31.51 грн
Мінімальне замовлення: 4
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SM8S18CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S18CAHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S18CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S18CAHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.29 грн
10+188.96 грн
100+138.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SM8S18A-2HE3/2D SM8S10_thru_SM8S43A._Aug.31%2C2016.pdf
SM8S18A-2HE3/2D
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 226A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V10PWL63C-M3/I v10pwl63c.pdf
V10PWL63C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.16 грн
10+39.40 грн
100+31.05 грн
500+22.56 грн
1000+19.37 грн
2000+18.66 грн
Мінімальне замовлення: 6
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V10PWL63-M3/I v10pwl63.pdf
V10PWL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.29 грн
10+50.33 грн
100+33.14 грн
500+24.15 грн
1000+21.91 грн
2000+20.03 грн
Мінімальне замовлення: 4
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V10PWL63CHM3/I v10pwl63c.pdf
V10PWL63CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.83 грн
10+54.57 грн
100+36.02 грн
500+26.34 грн
1000+23.94 грн
2000+22.12 грн
Мінімальне замовлення: 4
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V10PWL63HM3/I v10pwl63.pdf
V10PWL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4445 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.49 грн
10+47.65 грн
100+38.97 грн
500+28.58 грн
1000+25.86 грн
2000+24.44 грн
Мінімальне замовлення: 5
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V20PWL63-M3/I v20pwl63.pdf
V20PWL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8377 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.36 грн
10+58.58 грн
100+38.83 грн
500+28.48 грн
1000+25.91 грн
2000+24.37 грн
Мінімальне замовлення: 4
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V20PWL63C-M3/I v20pwl63c.pdf
V20PWL63C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4380 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.07 грн
10+62.36 грн
100+41.47 грн
500+30.49 грн
1000+27.78 грн
2000+26.51 грн
Мінімальне замовлення: 4
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V20PWL63HM3/I v20pwl63.pdf
V20PWL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.28 грн
10+57.88 грн
100+45.43 грн
500+33.52 грн
1000+30.59 грн
2000+29.78 грн
Мінімальне замовлення: 4
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V20PWL63CHM3/I v20pwl63c.pdf
V20PWL63CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 10A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Qualification: AEC-Q101
на замовлення 7690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.24 грн
10+69.04 грн
100+48.53 грн
500+35.91 грн
1000+32.81 грн
2000+32.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V40PWL63C-M3/I v40pwl63c.pdf
V40PWL63C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.84 грн
10+79.81 грн
100+53.72 грн
500+39.92 грн
1000+36.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
V35PWL63HM3/I v35pwl63.pdf
V35PWL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4700pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.89 грн
10+70.38 грн
100+55.60 грн
500+41.38 грн
1000+38.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
V40PWL63CHM3/I v40pwl63c.pdf
V40PWL63CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.04 грн
10+79.74 грн
100+62.97 грн
500+47.10 грн
1000+45.06 грн
Мінімальне замовлення: 3
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MMSZ5239C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5239C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
товару немає в наявності
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MMSZ5239C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5239C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Qualification: AEC-Q101
товару немає в наявності
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BZT52C68-HE3_A-08 bzt52_series.pdf
BZT52C68-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
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BZT52C68-HE3_A-18 bzt52_series.pdf
BZT52C68-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Qualification: AEC-Q101
товару немає в наявності
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SMAJ48CA-E3/5A smaj50a.pdf
SMAJ48CA-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SMAJ48CA-E3/5A smaj50a.pdf
SMAJ48CA-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 7378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.13 грн
19+16.99 грн
100+11.44 грн
500+8.31 грн
1000+7.50 грн
2000+6.81 грн
Мінімальне замовлення: 13
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BZX84C75-HE3_A-08 bzx84_series.pdf
BZX84C75-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Qualification: AEC-Q101
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BZX84C75-HE3_A-18 bzx84_series.pdf
BZX84C75-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Qualification: AEC-Q101
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VS-A5PH3006L-N3 vs-a5ph3006l-n3.pdf
VS-A5PH3006L-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
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VS-A5PX3006L-N3 vs-a5px3006l-n3.pdf
VS-A5PX3006L-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
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VS-A5PX6006L-N3 vs-a5px6006l-n3.pdf
VS-A5PX6006L-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 46 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
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VS-A5PH6006L-N3 vs-a5ph6006l-n3.pdf
VS-A5PH6006L-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 54 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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5KP28AHE3_A/C 5kp8_5a.pdf
5KP28AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170AHM3_A/H p4sma.pdf
P4SMA170AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170AHM3_A/I p4sma.pdf
P4SMA170AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V10K60DU-M3/I v10k60du.pdf
V10K60DU-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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V10KM45DU-M3/I v10km45du.pdf
V10KM45DU-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10K100DU-M3/I v10k100du.pdf
V10K100DU-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V10K120C-M3/I v10k120c.pdf
V10K120C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.6A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Qualification: AEC-Q101
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V10KL45C-M3/I v10kl45c.pdf
V10KL45C-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 5.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
Qualification: AEC-Q101
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V10K60DUHM3/I v10k60du.pdf
V10K60DUHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
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V10KM45DU-M3/H v10km45du.pdf
V10KM45DU-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10K120C-M3/H v10k120c.pdf
V10K120C-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V 3.6A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.6A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Qualification: AEC-Q101
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V10KM45C-M3/H v10km45c.pdf
V10KM45C-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Qualification: AEC-Q101
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V10KM45DUHM3/I v10km45du.pdf
V10KM45DUHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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V10KL45C-M3/H v10kl45c.pdf
V10KL45C-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 5.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 45 V
Qualification: AEC-Q101
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VTVS11ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS11ASMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.42 грн
6000+8.27 грн
9000+7.86 грн
15000+6.94 грн
21000+6.69 грн
Мінімальне замовлення: 3000
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VTVS11ASMF-HM3-08 vtvs3v3asmf.pdf
VTVS11ASMF-HM3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.65 грн
13+24.77 грн
100+15.80 грн
500+11.19 грн
1000+10.01 грн
Мінімальне замовлення: 8
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VTVS11ASMF-M3-18 vtvs3v3asmf.pdf
VTVS11ASMF-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11.2VWM 18VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 910pF @ 1MHz
Current - Peak Pulse (10/1000µs): 21.13A
Voltage - Reverse Standoff (Typ): 11.2V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 400W
Power Line Protection: No
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