| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4148-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: Ammo Pack Max. forward impulse current: 2A Case: DO35 Reverse recovery time: 8ns Max. load current: 0.5A |
на замовлення 43497 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
на замовлення 191 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHJ7N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 17A Power dissipation: 96W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 598mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
CRCW12060000Z0TABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C Resistance: 0Ω Tolerance: ±5% Power: 0.25W Mounting: SMD Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...155°C Type of resistor: thick film |
на замовлення 92937 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
![]() +1 |
BAV70-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 8420 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BAV70-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
LL4148-GS08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 7 inch reel Quantity in set/package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
LL4148-GS18 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: MiniMELF; SOD80 Max. forward voltage: 0.86V Max. load current: 0.5A Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: 13 inch reel Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
GRC00JS4721E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 25V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x31.5mm |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D106X0050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
на замовлення 157 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D106X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 5386 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D106X9050E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 10µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
на замовлення 223 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D475X0050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D475X9050D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 4.7µF Operating voltage: 50V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Roll diameter max.: 178mm Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 1978 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D475X9025B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 1411 Case - mm: 3528 Operating temperature: -55...125°C Case: B Manufacturer series: Tantamount |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D475X9025C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 4.7µF Operating voltage: 25V DC Tolerance: ±10% Mounting: SMD Case - inch: 2312 Case - mm: 6032 Operating temperature: -55...125°C Case: C Roll diameter max.: 178mm Manufacturer series: Tantamount |
на замовлення 4588 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHD240N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
293D476X0016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: B Case - inch: 1411 Case - mm: 3528 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 2509 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 10V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 5919 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2312 Case - mm: 6032 Case: C |
на замовлення 4646 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 47µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 2443 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: D |
на замовлення 2665 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D476X96R3B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 6.3V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 1411 Case - mm: 3528 Case: B |
на замовлення 3767 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
293D477X96R3D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 470µF Operating voltage: 6.3V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: 293D Case: D ESR value: 0.5Ω Case - mm: 7343 Case - inch: 2917 |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
1N5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD Mounting: THT Capacitance: 30pF Leakage current: 0.5mA Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 1kV Kind of package: 13 inch reel Quantity in set/package: 1400pcs. Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode |
на замовлення 1750 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
2W10G-E4/51 | VISHAY |
Category: Round single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round Kind of package: bulk Electrical mounting: THT Case: WOG Max. forward impulse current: 60A Max. forward voltage: 1.1V Load current: 2A Max. off-state voltage: 1kV Features of semiconductor devices: glass passivated Version: round Leads: wire Ø 0.75mm Type of bridge rectifier: single-phase |
на замовлення 3734 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
MAL214699111E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20% Operating temperature: -40...125°C Type of capacitor: electrolytic Mounting: SMD Capacitance: 1mF Body dimensions: 16x16x21mm Operating voltage: 50V DC Tolerance: ±20% |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
MAL204831102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Operating temperature: -40...105°C Capacitance: 1mF Terminal pitch: 7.5mm Diameter: 16mm Body dimensions: Ø16x25mm Height: 25mm Tolerance: ±20% Operating voltage: 50V DC Service life: 4000h Manufacturer series: MAL2048 |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
MAL204861102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 4000h Operating temperature: -40...105°C Terminal pitch: 7.5mm Diameter: 16mm Body dimensions: Ø16x25mm Height: 25mm |
на замовлення 353 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
GRC00JE1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm Terminal pitch: 7.5mm |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
MAL215031102E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Diameter: 16mm Body dimensions: Ø16x25mm Terminal pitch: 7.5mm Height: 25mm |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
ZRC00JG1021H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x25mm |
на замовлення 259 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| SI7852DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Polarisation: unipolar Gate charge: 41nC Type of transistor: N-MOSFET Power dissipation: 1.2W Drain current: 7.6A Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 80V On-state resistance: 16.5mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SS26-E3/52T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 75A Max. off-state voltage: 60V Quantity in set/package: 750pcs. Case: SMB |
на замовлення 7121 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
SS26HE3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs. Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 75A Max. off-state voltage: 60V Quantity in set/package: 750pcs. Application: automotive industry Case: SMB |
на замовлення 684 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
SS26S-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 13 inch reel Leakage current: 10mA Max. forward voltage: 0.62V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 7500pcs. Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SS26S-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Leakage current: 10mA Max. forward voltage: 0.62V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 1800pcs. Case: SMA |
на замовлення 1024 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| SISS26DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC On-state resistance: 7.8mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 60A Drain-source voltage: 60V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SISS26LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC On-state resistance: 6.2mΩ Power dissipation: 36W Gate-source voltage: ±20V Drain current: 65A Drain-source voltage: 60V Pulsed drain current: 150A Case: PowerPAK® 1212-8 Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TSSS2600 | VISHAY |
Category: IR LEDsDescription: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Radiant power: 2.6mW Viewing angle: 25° Operating voltage: 1.25...1.6V DC Mounting: THT Dimensions: 3.6x2.2x5mm LED current: 100mA LED version: angular |
на замовлення 4465 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IRF840ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF840APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 683 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 679 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IRF840STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Reverse recovery time: 5ns Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1771 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1181 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 2085 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 30ns Leakage current: 0.1mA |
на замовлення 7728 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 30ns Leakage current: 0.1mA Quantity in set/package: 5000pcs. |
на замовлення 445 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Technology: TransZorb® Kind of package: 13 inch reel Features of semiconductor devices: glass passivated |
на замовлення 1186 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N4148-TAP |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
на замовлення 43497 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 112+ | 3.78 грн |
| 180+ | 2.33 грн |
| 500+ | 1.69 грн |
| 1000+ | 1.49 грн |
| 2000+ | 1.31 грн |
| 10000+ | 1.00 грн |
| 20000+ | 0.90 грн |
| 30000+ | 0.85 грн |
| SIHA20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHB20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 191 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.07 грн |
| 5+ | 218.21 грн |
| 10+ | 192.19 грн |
| 25+ | 157.78 грн |
| 100+ | 142.68 грн |
| SiHH20N50E-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP20N50E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHJ7N65E-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 17A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 17A
Power dissipation: 96W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 598mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| CRCW12060000Z0TABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 0Ω; 0.25W; ±5%; 200V; -55÷155°C
Resistance: 0Ω
Tolerance: ±5%
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...155°C
Type of resistor: thick film
на замовлення 92937 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.62 грн |
| 270+ | 1.59 грн |
| 1120+ | 0.38 грн |
| 1440+ | 0.29 грн |
| 5000+ | 0.22 грн |
| 10000+ | 0.21 грн |
| 50000+ | 0.20 грн |
| BAV70-E3-08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 8420 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.85 грн |
| 58+ | 7.30 грн |
| 100+ | 4.37 грн |
| 500+ | 3.27 грн |
| 1000+ | 2.74 грн |
| 3000+ | 2.11 грн |
| 6000+ | 1.85 грн |
| BAV70-G3-08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| LL4148-GS08 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 7 inch reel
Quantity in set/package: 2500pcs.
товару немає в наявності
В кошику
од. на суму грн.
| LL4148-GS18 |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF,SOD80; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: MiniMELF; SOD80
Max. forward voltage: 0.86V
Max. load current: 0.5A
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: 13 inch reel
Quantity in set/package: 10000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| GRC00JS4721E00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 25V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x31.5mm
на замовлення 151 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.43 грн |
| 12+ | 36.51 грн |
| 50+ | 28.28 грн |
| 100+ | 23.33 грн |
| 293D106X0050E2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
на замовлення 157 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 112.07 грн |
| 10+ | 83.09 грн |
| 50+ | 73.86 грн |
| 100+ | 65.46 грн |
| 293D106X9050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 5386 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.98 грн |
| 10+ | 45.91 грн |
| 50+ | 40.20 грн |
| 100+ | 37.77 грн |
| 250+ | 34.49 грн |
| 500+ | 32.14 грн |
| 1000+ | 30.63 грн |
| 293D106X9050E2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 50VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 10µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
на замовлення 223 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.81 грн |
| 10+ | 63.45 грн |
| 50+ | 49.77 грн |
| 100+ | 45.74 грн |
| 200+ | 42.55 грн |
| 293D475X0050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 327 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.82 грн |
| 293D475X9050D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 50VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 50V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Roll diameter max.: 178mm
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 1978 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.92 грн |
| 10+ | 50.27 грн |
| 50+ | 39.03 грн |
| 100+ | 34.83 грн |
| 500+ | 26.35 грн |
| 1000+ | 25.18 грн |
| 293D475X9025B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 1411
Case - mm: 3528
Operating temperature: -55...125°C
Case: B
Manufacturer series: Tantamount
на замовлення 35 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.50 грн |
| 30+ | 14.44 грн |
| 293D475X9025C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 4.7uF; 25VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 4.7µF
Operating voltage: 25V DC
Tolerance: ±10%
Mounting: SMD
Case - inch: 2312
Case - mm: 6032
Operating temperature: -55...125°C
Case: C
Roll diameter max.: 178mm
Manufacturer series: Tantamount
на замовлення 4588 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.73 грн |
| 19+ | 22.32 грн |
| 50+ | 15.95 грн |
| 100+ | 13.26 грн |
| 200+ | 10.83 грн |
| 500+ | 9.32 грн |
| SIHA240N60E-GE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHD240N60E-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 293D476X0016D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.90 грн |
| 293D476X9010B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: B
Case - inch: 1411
Case - mm: 3528
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 2509 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 21+ | 20.48 грн |
| 25+ | 17.20 грн |
| 50+ | 9.90 грн |
| 100+ | 8.22 грн |
| 293D476X9010C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 5919 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 21+ | 20.06 грн |
| 50+ | 12.59 грн |
| 100+ | 10.07 грн |
| 200+ | 8.31 грн |
| 250+ | 8.22 грн |
| 293D476X9016C2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2312
Case - mm: 6032
Case: C
на замовлення 4646 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.96 грн |
| 23+ | 18.46 грн |
| 50+ | 12.51 грн |
| 100+ | 11.33 грн |
| 500+ | 10.32 грн |
| 1000+ | 10.24 грн |
| 1500+ | 10.07 грн |
| 2500+ | 9.90 грн |
| 293D476X9016D2TE3 | ![]() |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 47µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 2443 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 19+ | 22.74 грн |
| 50+ | 18.21 грн |
| 100+ | 16.62 грн |
| 500+ | 13.68 грн |
| 1000+ | 12.76 грн |
| 1500+ | 12.25 грн |
| 293D476X9020D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: D
на замовлення 2665 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.10 грн |
| 15+ | 28.79 грн |
| 50+ | 23.42 грн |
| 100+ | 21.40 грн |
| 500+ | 17.37 грн |
| 1000+ | 16.28 грн |
| 293D476X96R3B2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 6.3VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 6.3V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
на замовлення 3767 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 29+ | 14.52 грн |
| 50+ | 12.09 грн |
| 100+ | 11.16 грн |
| 500+ | 8.90 грн |
| 293D477X96R3D2TE3 |
![]() |
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 470uF; 6.3VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 470µF
Operating voltage: 6.3V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: 293D
Case: D
ESR value: 0.5Ω
Case - mm: 7343
Case - inch: 2917
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 421.18 грн |
| 1N5408-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Mounting: THT
Capacitance: 30pF
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
на замовлення 1750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.94 грн |
| 12+ | 36.34 грн |
| 50+ | 25.93 грн |
| 100+ | 22.41 грн |
| 500+ | 15.86 грн |
| 1000+ | 13.85 грн |
| 1400+ | 12.84 грн |
| 2W10G-E4/51 |
![]() |
Виробник: VISHAY
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Electrical mounting: THT
Case: WOG
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
Category: Round single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; round
Kind of package: bulk
Electrical mounting: THT
Case: WOG
Max. forward impulse current: 60A
Max. forward voltage: 1.1V
Load current: 2A
Max. off-state voltage: 1kV
Features of semiconductor devices: glass passivated
Version: round
Leads: wire Ø 0.75mm
Type of bridge rectifier: single-phase
на замовлення 3734 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.94 грн |
| 13+ | 33.99 грн |
| 25+ | 30.38 грн |
| 100+ | 25.43 грн |
| 500+ | 20.39 грн |
| 1000+ | 18.46 грн |
| 3000+ | 16.70 грн |
| MAL214699111E3 |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Operating temperature: -40...125°C
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Body dimensions: 16x16x21mm
Operating voltage: 50V DC
Tolerance: ±20%
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 1mF; 50VDC; 16x16x21mm; ±20%
Operating temperature: -40...125°C
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 1mF
Body dimensions: 16x16x21mm
Operating voltage: 50V DC
Tolerance: ±20%
на замовлення 150 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 317.24 грн |
| 5+ | 247.58 грн |
| 10+ | 220.73 грн |
| 40+ | 160.30 грн |
| 50+ | 153.59 грн |
| MAL204831102E3 |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 1mF
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Tolerance: ±20%
Operating voltage: 50V DC
Service life: 4000h
Manufacturer series: MAL2048
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...105°C
Capacitance: 1mF
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Tolerance: ±20%
Operating voltage: 50V DC
Service life: 4000h
Manufacturer series: MAL2048
на замовлення 99 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 212.40 грн |
| 10+ | 152.75 грн |
| 50+ | 123.37 грн |
| MAL204861102E3 |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...105°C
Terminal pitch: 7.5mm
Diameter: 16mm
Body dimensions: Ø16x25mm
Height: 25mm
на замовлення 353 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 180.76 грн |
| 5+ | 104.07 грн |
| 10+ | 98.19 грн |
| 25+ | 93.16 грн |
| GRC00JE1021H00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Terminal pitch: 7.5mm
на замовлення 171 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.09 грн |
| 11+ | 38.27 грн |
| 50+ | 27.36 грн |
| 150+ | 23.00 грн |
| MAL215031102E3 |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Diameter: 16mm
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Height: 25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Diameter: 16mm
Body dimensions: Ø16x25mm
Terminal pitch: 7.5mm
Height: 25mm
на замовлення 151 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 197.03 грн |
| 5+ | 130.93 грн |
| 10+ | 120.01 грн |
| 25+ | 112.46 грн |
| 50+ | 107.43 грн |
| 100+ | 104.07 грн |
| ZRC00JG1021H00L |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
на замовлення 259 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.00 грн |
| 10+ | 54.47 грн |
| 50+ | 42.47 грн |
| 150+ | 38.10 грн |
| SI7852DP-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
товару немає в наявності
В кошику
од. на суму грн.
| SS26-E3/52T |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Case: SMB
на замовлення 7121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 29+ | 14.60 грн |
| 50+ | 11.92 грн |
| 100+ | 10.83 грн |
| 250+ | 9.57 грн |
| 500+ | 8.56 грн |
| 750+ | 8.06 грн |
| 1500+ | 7.39 грн |
| SS26HE3_A/H |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 75A
Max. off-state voltage: 60V
Quantity in set/package: 750pcs.
Application: automotive industry
Case: SMB
на замовлення 684 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 18+ | 23.58 грн |
| 25+ | 20.56 грн |
| 100+ | 16.70 грн |
| SS26S-E3/5AT |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS26S-E3/61T |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Leakage current: 10mA
Max. forward voltage: 0.62V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
на замовлення 1024 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 30+ | 14.35 грн |
| 35+ | 12.34 грн |
| 50+ | 11.33 грн |
| SISS26DN-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 7.8mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| SISS26LDN-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
On-state resistance: 6.2mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 65A
Drain-source voltage: 60V
Pulsed drain current: 150A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TSSS2600 |
![]() |
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
на замовлення 4465 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 16+ | 27.70 грн |
| 25+ | 24.25 грн |
| 50+ | 21.99 грн |
| 100+ | 20.14 грн |
| 500+ | 17.12 грн |
| 1000+ | 16.20 грн |
| IRF840ALPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
товару немає в наявності
В кошику
од. на суму грн.
| IRF840ASPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840ASTRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840LCPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 683 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.07 грн |
| 10+ | 120.01 грн |
| 25+ | 101.55 грн |
| 50+ | 88.12 грн |
| 100+ | 75.53 грн |
| 250+ | 64.62 грн |
| 500+ | 58.75 грн |
| IRF840SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 679 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.38 грн |
| 10+ | 74.69 грн |
| 50+ | 60.43 грн |
| 100+ | 57.91 грн |
| 250+ | 54.55 грн |
| IRF840STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-05-E3-08 |
![]() |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1771 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.75 грн |
| 57+ | 7.47 грн |
| 100+ | 4.26 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.78 грн |
| 1.5KE27CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1181 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.40 грн |
| 100+ | 20.65 грн |
| 500+ | 18.30 грн |
| 1N5822-E3/54 |
![]() |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 2085 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.88 грн |
| 30+ | 14.44 грн |
| 100+ | 13.76 грн |
| BYV26C-TAP |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
на замовлення 7728 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 16+ | 26.35 грн |
| 100+ | 21.07 грн |
| 200+ | 19.47 грн |
| 500+ | 17.37 грн |
| 1000+ | 15.78 грн |
| 2000+ | 14.18 грн |
| 2500+ | 13.68 грн |
| 5000+ | 13.34 грн |
| BYV26C-TR | ![]() |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
Quantity in set/package: 5000pcs.
на замовлення 445 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.60 грн |
| 27+ | 15.78 грн |
| 1.5KE400A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
на замовлення 1186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.71 грн |
| 12+ | 35.75 грн |
| IRF740APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.



























