Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (2886) > Сторінка 13 з 49
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DB106 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DB; THT Case: DB Kind of package: tube Type of bridge rectifier: single-phase Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 0.8kV Electrical mounting: THT |
на замовлення 4145 шт: термін постачання 14-30 дні (днів) |
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DB106S | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: DBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1292 шт: термін постачання 14-30 дні (днів) |
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DB107 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DB; THT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 30A Case: DB Electrical mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||
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DB107S | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 30A Case: DBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 445 шт: термін постачання 14-30 дні (днів) |
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DB155 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; DB; THT Case: DB Kind of package: tube Type of bridge rectifier: single-phase Load current: 1.5A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Electrical mounting: THT |
на замовлення 3140 шт: термін постачання 14-30 дні (днів) |
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DB157 | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DB Electrical mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||
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DB157S | YANGJIE TECHNOLOGY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 50A Case: DBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 992 шт: термін постачання 14-30 дні (днів) |
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DB205 | Yangjie Technology |
Description: DB 600V 2.0A Diodes Bridge Rec Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 600 V Part Status: Active Supplier Device Package: DB-1 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Tube |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DB206 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers DB 2APackaging: Tube Package / Case: 4-EDIP (0.300", 7.62mm) Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DB-1 Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DB206S | Yangjie Technology |
Description: DBS 800V 2.0A Diodes Bridge RePackaging: Tape & Reel (TR) Part Status: Active |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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DBL207 | Yangjie Technology | Description: DBL 1000V 2.0A Diodes Bridge R |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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DBL207S | Yangjie Technology | Description: DBLS 1000V 2.0A Diodes Bridge |
на замовлення 150000 шт: термін постачання 21-31 дні (днів) |
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| DDTC113ZCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.5A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DF25NA100 | Yangjie Technology |
Description: TSB-5 1000V 25.0A Diodes BridgPart Status: Active Packaging: Bulk |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF25NA160 | Yangjie Technology |
Description: TSB-5 1600V 25.0A Diodes BridgPart Status: Active Packaging: Bulk |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF25NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: TSB-5 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Three Phase Mounting Type: Through Hole Package / Case: 5-SIP, TSB-5 Packaging: Bulk |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DF35NA80 | Yangjie Technology |
Description: Diodes - Bridge Rectifiers TSB-5 Diode Type: Three Phase Mounting Type: Through Hole Package / Case: 5-SIP, TSB-5 Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 800 V Part Status: Active Supplier Device Package: TSB-5 Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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DGW15N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) Power - Max: 200 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Part Status: Active Gate Charge: 140 nC Test Condition: 600V, 15A, 33Ohm, 15V Switching Energy: 1.5mJ (on), 900µJ (off) Td (on/off) @ 25°C: 45ns/128ns IGBT Type: Trench Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A Input Type: Standard |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW25N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Power - Max: 326 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 200 nC Test Condition: 600V, 25A, 18Ohm, 15V Switching Energy: 1.8m (on), 1.4mJ (off) Td (on/off) @ 25°C: 158ns/331ns IGBT Type: Trench Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW30N65BTH | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Gate Charge: 150 nC Test Condition: 300V, 30A, 33Ohm, 15V Switching Energy: 870µJ (on), 260µJ (off) Td (on/off) @ 25°C: 37ns/113ns Supplier Device Package: TO-247 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Reverse Recovery Time (trr): 35 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) Power - Max: 187 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Active |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW40N120CTL | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 45ns/180ns Switching Energy: 3.8mJ (on), 1.7mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 428 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW50N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Power - Max: 326 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Part Status: Active Gate Charge: 450 nC Test Condition: 300V, 50A, 10Ohm, 15V Switching Energy: 1.27mJ (on), 650µJ (off) Td (on/off) @ 25°C: 55ns/319ns Supplier Device Package: TO-247AB Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Reverse Recovery Time (trr): 100 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Reel (TR) |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DGW75N65CTL1 | Yangjie Technology |
Description: Transistors - IGBTs - Single TO- Packaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Supplier Device Package: TO-247AB Td (on/off) @ 25°C: 75ns/468ns Switching Energy: 2.5mJ (on), 1.3mJ (off) Test Condition: 300V, 75A, 10Ohm, 15V Gate Charge: 580 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DS521-30L2 | Yangjie Technology |
Description: Diodes - Rectifiers - Single DFN Current - Reverse Leakage @ Vr: 10 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DFN1006-2L Current - Average Rectified (Io): 100mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) |
на замовлення 1000000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZCA | Yangjie Technology | Description: SOT-23 PNP 0.2W -0.1A Transisto |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZE | Yangjie Technology | Description: Transistors - Bipolar (BJT) - Si |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA113ZUA | Yangjie Technology | Description: SOT-323 PNP 0.2W -0.1A Transist |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA114ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 2700 шт: термін постачання 14-30 дні (днів) |
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DTA114ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA114EUA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 1725 шт: термін постачання 14-30 дні (днів) |
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DTA114EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA114YCA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 2250 шт: термін постачання 14-30 дні (днів) |
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DTA123ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Resistor - Base (R1): 2.2 kOhms Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123ECA | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Frequency: 250MHz |
на замовлення 2323 шт: термін постачання 14-30 дні (днів) |
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DTA123JCA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123JE | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA123JUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA124ECA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA124EUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 22 kOhms Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143EE | Yangjie Technology |
Description: SOT-523 PNP 0.15W -0.1A Transis Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143EUA | Yangjie Technology |
Description: SOT-323 PNP 0.2W -0.1A Transist Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZCA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA144ECA | Yangjie Technology |
Description: SOT-23 PNP 0.2W -0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTA144EUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC113ZCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A Transistor Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC113ZCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ |
на замовлення 375 шт: термін постачання 14-30 дні (днів) |
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DTC113ZUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Resistor - Base (R1): 1 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114ECA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 900 шт: термін постачання 14-30 дні (днів) |
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DTC114ECA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A Transistor Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114EE | Yangjie Technology |
Description: SOT-523 NPN 0.15W 0.1A Transist Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114EUA | Yangjie Technology |
Description: SOT-323 NPN 0.2W 0.1A Transisto Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114EUA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 1275 шт: термін постачання 14-30 дні (днів) |
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DTC114TCA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114TUA | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC114YE | Yangjie Technology |
Description: SOT-523 NPN 0.15W 0.1A TransistPackaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC123JCA | Yangjie Technology |
Description: SOT-23 NPN 0.2W 0.1A Transistor |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC123JUA | Yangjie Technology |
Description: SOT-323 NPN 0.2W 0.1A Transisto Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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DTC123YCA | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| DB106 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DB; THT
Case: DB
Kind of package: tube
Type of bridge rectifier: single-phase
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DB; THT
Case: DB
Kind of package: tube
Type of bridge rectifier: single-phase
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Electrical mounting: THT
на замовлення 4145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 17.23 грн |
| 55+ | 7.79 грн |
| 100+ | 6.96 грн |
| 500+ | 6.22 грн |
| 2500+ | 5.64 грн |
| DB106S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 1A; Ifsm: 30A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1292 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.64 грн |
| 65+ | 6.55 грн |
| 100+ | 5.97 грн |
| 500+ | 5.22 грн |
| DB107 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DB; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: DB
Electrical mounting: THT
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DB; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: DB
Electrical mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| DB107S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 30A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 445 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 13.84 грн |
| 65+ | 6.80 грн |
| 100+ | 6.14 грн |
| DB155 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; DB; THT
Case: DB
Kind of package: tube
Type of bridge rectifier: single-phase
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1.5A; Ifsm: 50A; DB; THT
Case: DB
Kind of package: tube
Type of bridge rectifier: single-phase
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Electrical mounting: THT
на замовлення 3140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.00 грн |
| 70+ | 6.30 грн |
| 100+ | 5.72 грн |
| 500+ | 5.06 грн |
| 2500+ | 4.81 грн |
| DB157 |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DB; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DB
Electrical mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| DB157S |
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Виробник: YANGJIE TECHNOLOGY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 1.5A; Ifsm: 50A; DBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: DBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 992 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.04 грн |
| 45+ | 10.28 грн |
| 100+ | 9.20 грн |
| 500+ | 8.13 грн |
| DB205 |
Виробник: Yangjie Technology
Description: DB 600V 2.0A Diodes Bridge Rec
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB-1
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Tube
Description: DB 600V 2.0A Diodes Bridge Rec
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: DB-1
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.321", 8.15mm)
Packaging: Tube
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 8.92 грн |
| 12500+ | 8.10 грн |
| 25000+ | 7.61 грн |
| 50000+ | 6.75 грн |
| 100000+ | 6.03 грн |
| 250000+ | 5.63 грн |
| DB206 |
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Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers DB 2A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: Diodes - Bridge Rectifiers DB 2A
Packaging: Tube
Package / Case: 4-EDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 9.53 грн |
| 12500+ | 8.66 грн |
| 25000+ | 8.13 грн |
| 50000+ | 7.21 грн |
| 100000+ | 6.44 грн |
| 250000+ | 6.02 грн |
| DB206S |
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Виробник: Yangjie Technology
Description: DBS 800V 2.0A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DBS 800V 2.0A Diodes Bridge Re
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 9.53 грн |
| 7500+ | 8.66 грн |
| 15000+ | 8.13 грн |
| 30000+ | 7.21 грн |
| 60000+ | 6.44 грн |
| 150000+ | 6.02 грн |
| DBL207 |
Виробник: Yangjie Technology
Description: DBL 1000V 2.0A Diodes Bridge R
Description: DBL 1000V 2.0A Diodes Bridge R
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 8.98 грн |
| 12500+ | 8.16 грн |
| 25000+ | 7.66 грн |
| 50000+ | 6.80 грн |
| 100000+ | 6.07 грн |
| 250000+ | 5.68 грн |
| DBL207S |
Виробник: Yangjie Technology
Description: DBLS 1000V 2.0A Diodes Bridge
Description: DBLS 1000V 2.0A Diodes Bridge
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 8.98 грн |
| 7500+ | 8.16 грн |
| 15000+ | 7.66 грн |
| 30000+ | 6.80 грн |
| 60000+ | 6.07 грн |
| 150000+ | 5.68 грн |
| DDTC113ZCA |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.2W 0.5A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.10 грн |
| 15000+ | 2.84 грн |
| 30000+ | 2.69 грн |
| 60000+ | 2.31 грн |
| 120000+ | 2.10 грн |
| 300000+ | 1.96 грн |
| DF25NA100 |
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Виробник: Yangjie Technology
Description: TSB-5 1000V 25.0A Diodes Bridg
Part Status: Active
Packaging: Bulk
Description: TSB-5 1000V 25.0A Diodes Bridg
Part Status: Active
Packaging: Bulk
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 145.06 грн |
| 480+ | 131.93 грн |
| 960+ | 124.17 грн |
| 1920+ | 109.24 грн |
| 3840+ | 98.32 грн |
| 9600+ | 91.04 грн |
| DF25NA160 |
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Виробник: Yangjie Technology
Description: TSB-5 1600V 25.0A Diodes Bridg
Part Status: Active
Packaging: Bulk
Description: TSB-5 1600V 25.0A Diodes Bridg
Part Status: Active
Packaging: Bulk
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 177.15 грн |
| 480+ | 161.11 грн |
| 960+ | 151.63 грн |
| 1920+ | 133.40 грн |
| 3840+ | 120.03 грн |
| 9600+ | 111.14 грн |
| DF25NA80 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: TSB-5
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Through Hole
Package / Case: 5-SIP, TSB-5
Packaging: Bulk
Description: Diodes - Bridge Rectifiers TSB-5
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: TSB-5
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Through Hole
Package / Case: 5-SIP, TSB-5
Packaging: Bulk
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 145.06 грн |
| 480+ | 131.93 грн |
| 960+ | 124.17 грн |
| 1920+ | 109.24 грн |
| 3840+ | 98.32 грн |
| 9600+ | 91.04 грн |
| DF35NA80 |
Виробник: Yangjie Technology
Description: Diodes - Bridge Rectifiers TSB-5
Diode Type: Three Phase
Mounting Type: Through Hole
Package / Case: 5-SIP, TSB-5
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: TSB-5
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Description: Diodes - Bridge Rectifiers TSB-5
Diode Type: Three Phase
Mounting Type: Through Hole
Package / Case: 5-SIP, TSB-5
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: TSB-5
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 225.73 грн |
| 480+ | 205.28 грн |
| 960+ | 193.19 грн |
| 1920+ | 170.03 грн |
| 3840+ | 153.01 грн |
| 9600+ | 141.67 грн |
| DGW15N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 200 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 140 nC
Test Condition: 600V, 15A, 33Ohm, 15V
Switching Energy: 1.5mJ (on), 900µJ (off)
Td (on/off) @ 25°C: 45ns/128ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Input Type: Standard
Description: Transistors - IGBTs - Single TO-
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 200 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Gate Charge: 140 nC
Test Condition: 600V, 15A, 33Ohm, 15V
Switching Energy: 1.5mJ (on), 900µJ (off)
Td (on/off) @ 25°C: 45ns/128ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 15A
Input Type: Standard
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 173.42 грн |
| 9000+ | 157.75 грн |
| 18000+ | 148.42 грн |
| 36000+ | 130.60 грн |
| 72000+ | 117.58 грн |
| 180000+ | 108.82 грн |
| DGW25N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 25A, 18Ohm, 15V
Switching Energy: 1.8m (on), 1.4mJ (off)
Td (on/off) @ 25°C: 158ns/331ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 25A, 18Ohm, 15V
Switching Energy: 1.8m (on), 1.4mJ (off)
Td (on/off) @ 25°C: 158ns/331ns
IGBT Type: Trench
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 249.99 грн |
| 9000+ | 227.29 грн |
| 18000+ | 213.94 грн |
| 36000+ | 188.24 грн |
| 72000+ | 169.40 грн |
| 180000+ | 156.86 грн |
| DGW30N65BTH |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Gate Charge: 150 nC
Test Condition: 300V, 30A, 33Ohm, 15V
Switching Energy: 870µJ (on), 260µJ (off)
Td (on/off) @ 25°C: 37ns/113ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 187 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Description: Transistors - IGBTs - Single TO-
Gate Charge: 150 nC
Test Condition: 300V, 30A, 33Ohm, 15V
Switching Energy: 870µJ (on), 260µJ (off)
Td (on/off) @ 25°C: 37ns/113ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Power - Max: 187 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 173.27 грн |
| 9000+ | 157.60 грн |
| 18000+ | 148.35 грн |
| 36000+ | 130.53 грн |
| 72000+ | 117.44 грн |
| 180000+ | 108.75 грн |
| DGW40N120CTL |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 45ns/180ns
Switching Energy: 3.8mJ (on), 1.7mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 428 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 333.29 грн |
| 9000+ | 303.11 грн |
| 18000+ | 285.28 грн |
| 36000+ | 250.98 грн |
| 72000+ | 225.91 грн |
| 180000+ | 209.18 грн |
| DGW50N65CTL1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Part Status: Active
Gate Charge: 450 nC
Test Condition: 300V, 50A, 10Ohm, 15V
Switching Energy: 1.27mJ (on), 650µJ (off)
Td (on/off) @ 25°C: 55ns/319ns
Supplier Device Package: TO-247AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
Description: Transistors - IGBTs - Single TO-
Power - Max: 326 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Part Status: Active
Gate Charge: 450 nC
Test Condition: 300V, 50A, 10Ohm, 15V
Switching Energy: 1.27mJ (on), 650µJ (off)
Td (on/off) @ 25°C: 55ns/319ns
Supplier Device Package: TO-247AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Reel (TR)
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 289.97 грн |
| 9000+ | 263.71 грн |
| 18000+ | 248.19 грн |
| 36000+ | 218.35 грн |
| 72000+ | 196.50 грн |
| 180000+ | 181.93 грн |
| DGW75N65CTL1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 75ns/468ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 300V, 75A, 10Ohm, 15V
Gate Charge: 580 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 499.89 грн |
| 9000+ | 454.66 грн |
| 18000+ | 427.95 грн |
| 36000+ | 376.47 грн |
| 72000+ | 338.80 грн |
| 180000+ | 313.73 грн |
| DS521-30L2 |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single DFN
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DFN1006-2L
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Description: Diodes - Rectifiers - Single DFN
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DFN1006-2L
Current - Average Rectified (Io): 100mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.55 грн |
| 50000+ | 1.42 грн |
| 100000+ | 1.34 грн |
| 200000+ | 1.19 грн |
| 400000+ | 1.05 грн |
| 1000000+ | 0.98 грн |
| DTA113ZCA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Description: SOT-23 PNP 0.2W -0.1A Transisto
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.42 грн |
| 15000+ | 1.30 грн |
| 30000+ | 1.23 грн |
| 60000+ | 1.09 грн |
| 120000+ | 0.96 грн |
| 300000+ | 0.90 грн |
| DTA113ZE |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Description: Transistors - Bipolar (BJT) - Si
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.49 грн |
| 15000+ | 1.36 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.15 грн |
| 120000+ | 1.02 грн |
| 300000+ | 0.96 грн |
| DTA113ZUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Description: SOT-323 PNP 0.2W -0.1A Transist
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.42 грн |
| 15000+ | 1.30 грн |
| 30000+ | 1.23 грн |
| 60000+ | 1.09 грн |
| 120000+ | 0.96 грн |
| 300000+ | 0.90 грн |
| DTA114ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2700 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 3.02 грн |
| 300+ | 1.44 грн |
| 500+ | 1.27 грн |
| DTA114ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA114EUA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 1725 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.47 грн |
| 325+ | 1.29 грн |
| 500+ | 1.14 грн |
| DTA114EUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: SOT-323 PNP 0.2W -0.1A Transist
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA114YCA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 2250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.51 грн |
| 325+ | 1.31 грн |
| 500+ | 1.16 грн |
| DTA123ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA123ECA |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
на замовлення 2323 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 1.96 грн |
| 425+ | 1.03 грн |
| 500+ | 0.99 грн |
| DTA123JCA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTA123JE |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.63 грн |
| 15000+ | 1.49 грн |
| 30000+ | 1.42 грн |
| 60000+ | 1.26 грн |
| 120000+ | 1.12 грн |
| 300000+ | 1.05 грн |
| DTA123JUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTA124ECA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTA124EUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA143ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA143EE |
Виробник: Yangjie Technology
Description: SOT-523 PNP 0.15W -0.1A Transis
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Description: SOT-523 PNP 0.15W -0.1A Transis
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.01 грн |
| 15000+ | 1.79 грн |
| 30000+ | 1.72 грн |
| 60000+ | 1.47 грн |
| 120000+ | 1.33 грн |
| 300000+ | 1.26 грн |
| DTA143EUA |
Виробник: Yangjie Technology
Description: SOT-323 PNP 0.2W -0.1A Transist
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Description: SOT-323 PNP 0.2W -0.1A Transist
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTA143ZCA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: SOT-23 PNP 0.2W -0.1A Transisto
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.39 грн |
| 15000+ | 1.27 грн |
| 30000+ | 1.19 грн |
| 60000+ | 1.05 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| DTA143ZUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTA144ECA |
Виробник: Yangjie Technology
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: SOT-23 PNP 0.2W -0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.88 грн |
| 15000+ | 1.68 грн |
| 30000+ | 1.61 грн |
| 60000+ | 1.38 грн |
| 120000+ | 1.24 грн |
| 300000+ | 1.18 грн |
| DTA144EUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Description: Transistors - Bipolar (BJT) - Si
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.74 грн |
| 15000+ | 1.61 грн |
| 30000+ | 1.47 грн |
| 60000+ | 1.31 грн |
| 120000+ | 1.18 грн |
| 300000+ | 1.11 грн |
| DTC113ZCA |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.32 грн |
| 15000+ | 1.19 грн |
| 30000+ | 1.12 грн |
| 60000+ | 0.98 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| DTC113ZCA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
на замовлення 375 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.91 грн |
| 300+ | 1.43 грн |
| DTC113ZUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: Transistors - Bipolar (BJT) - Si
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTC114ECA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.25 грн |
| 350+ | 1.19 грн |
| 500+ | 1.06 грн |
| DTC114ECA |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-23 NPN 0.2W 0.1A Transistor
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.32 грн |
| 15000+ | 1.19 грн |
| 30000+ | 1.12 грн |
| 60000+ | 0.98 грн |
| 120000+ | 0.91 грн |
| 300000+ | 0.84 грн |
| DTC114EE |
Виробник: Yangjie Technology
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.78 грн |
| 15000+ | 1.64 грн |
| 30000+ | 1.49 грн |
| 60000+ | 1.33 грн |
| 120000+ | 1.19 грн |
| 300000+ | 1.12 грн |
| DTC114EUA |
Виробник: Yangjie Technology
Description: SOT-323 NPN 0.2W 0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-323 NPN 0.2W 0.1A Transisto
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTC114EUA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 1275 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.84 грн |
| 325+ | 1.33 грн |
| 500+ | 1.18 грн |
| DTC114TCA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTC114TUA |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.86 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.57 грн |
| 60000+ | 1.40 грн |
| 120000+ | 1.26 грн |
| 300000+ | 1.19 грн |
| DTC114YE |
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Виробник: Yangjie Technology
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: SOT-523 NPN 0.15W 0.1A Transist
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.63 грн |
| 15000+ | 1.49 грн |
| 30000+ | 1.42 грн |
| 60000+ | 1.26 грн |
| 120000+ | 1.12 грн |
| 300000+ | 1.05 грн |
| DTC123JCA |
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Виробник: Yangjie Technology
Description: SOT-23 NPN 0.2W 0.1A Transistor
Description: SOT-23 NPN 0.2W 0.1A Transistor
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.49 грн |
| 15000+ | 1.37 грн |
| 30000+ | 1.30 грн |
| 60000+ | 1.15 грн |
| 120000+ | 1.01 грн |
| 300000+ | 0.95 грн |
| DTC123JUA |
Виробник: Yangjie Technology
Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: SOT-323 NPN 0.2W 0.1A Transisto
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 1.55 грн |
| 15000+ | 1.42 грн |
| 30000+ | 1.34 грн |
| 60000+ | 1.19 грн |
| 120000+ | 1.05 грн |
| 300000+ | 0.98 грн |
| DTC123YCA |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
Мінімальне замовлення: 25 шт
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