Продукція > ALPHA & OMEGA SEMICONDUCTOR INC. > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR INC. (3965) > Сторінка 25 з 67
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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AON2411 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET P-CH 12V 20A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 8A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2701 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 3A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2701L#A | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 20V 3A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2705 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 3A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2707 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 4A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2800 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4.5A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2801 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON2801L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH DUAL DFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON2801L#A | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 20V 3A DFN2X2-6L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2802 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 2A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2803 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 20V 3.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON2803G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH DUAL Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON2809 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 12V 2A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 2A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 2A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON2812 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 4.5A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-DFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON2880 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7A DFN2X2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON3402 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 12.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
на замовлення 8699 шт: термін постачання 21-31 дні (днів) |
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AON3419 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 10A DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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AON3611 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 5A/6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W, 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 6A Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Part Status: Active |
на замовлення 20678 шт: термін постачання 21-31 дні (днів) |
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AON3613 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 4.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3613 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 4.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3806 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3810 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8.5A 8-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3814 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3814L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL 20V TO252 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3816 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3816_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 4A 8-DFN Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON3818 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 24V 8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407_003 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407L_002 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4407L_003 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 12V 9A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A SFN3X2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10A SFN3X2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON4421 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4421 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4421_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 8A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4605 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4605_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4703 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 3.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-DFN (3x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4705L | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 4A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4803 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 20V 3.4A DFN3X2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4807 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 4A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON4807_001 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2P-CH 30V 4A 8DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
AON5802A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON5802A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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AON5802A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7.2A 6-DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON5802ALS | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH DUAL DFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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AON5802B | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 7.2A 6DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| AON5802B_101 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH DUAL DFN |
товару немає в наявності |
В кошику од. на суму грн. |
| AON2411 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 20A 8DFN
Description: MOSFET P-CH 12V 20A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2420 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON2420 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON2701 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Description: MOSFET P-CH 20V 3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| AON2701L#A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3A 6DFN
Description: MOSFET P-CH 20V 3A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2705 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Description: MOSFET P-CH 30V 3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON2707 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Description: MOSFET P-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON2800 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4.5A 6DFN
Description: MOSFET 2N-CH 20V 4.5A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2801 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
товару немає в наявності
В кошику
од. на суму грн.
| AON2801L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH DUAL DFN
Description: MOSFET P-CH DUAL DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2801L#A |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
товару немає в наявності
В кошику
од. на суму грн.
| AON2802 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Description: MOSFET 2N-CH 30V 2A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2803 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Description: MOSFET 2P-CH 20V 3.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
товару немає в наявності
В кошику
од. на суму грн.
| AON2809 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 12V 2A 6DFN
Description: MOSFET 2P-CH 12V 2A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2810 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Description: MOSFET 2N-CH 30V 2A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2810 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
Description: MOSFET 2N-CH 30V 2A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON2812 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 4.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Description: MOSFET 2N-CH 30V 4.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
товару немає в наявності
В кошику
од. на суму грн.
| AON2880 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7A DFN2X2
Description: MOSFET 2N-CH 20V 7A DFN2X2
товару немає в наявності
В кошику
од. на суму грн.
| AON3402 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 12.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
Description: MOSFET N-CH 20V 12.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
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| AON3414 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.79 грн |
| 13+ | 23.68 грн |
| 100+ | 15.09 грн |
| 500+ | 10.67 грн |
| 1000+ | 9.55 грн |
| AON3414 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.98 грн |
| 6000+ | 7.88 грн |
| AON3419 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 10A DFN
Description: MOSFET P-CH 30V 10A DFN
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| AON3611 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.27 грн |
| 6000+ | 12.73 грн |
| 9000+ | 12.21 грн |
| 15000+ | 11.13 грн |
| AON3611 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 20678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.26 грн |
| 10+ | 39.01 грн |
| 100+ | 25.29 грн |
| 500+ | 18.18 грн |
| 1000+ | 16.39 грн |
| AON3613 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON3613 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON3806 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON3810 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
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| AON3810 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
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од. на суму грн.
| AON3810 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
Description: MOSFET 2N-CH 20V 8.5A 8-DFN
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В кошику
од. на суму грн.
| AON3814 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON3814L |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL 20V TO252
Description: MOSFET N-CH DUAL 20V TO252
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В кошику
од. на суму грн.
| AON3816 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON3816_101 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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В кошику
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| AON3818 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 24V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Description: MOSFET 2N-CH 24V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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| AON4407 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
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| AON4407 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| AON4407_003 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4407L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Description: MOSFET P-CH 12V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| AON4407L_002 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4407L_003 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Description: MOSFET P-CH 12V 9A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4420 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
Description: MOSFET N-CH 30V 10A SFN3X2
товару немає в наявності
В кошику
од. на суму грн.
| AON4420 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
Description: MOSFET N-CH 30V 10A SFN3X2
товару немає в наявності
В кошику
од. на суму грн.
| AON4421 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON4421 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| AON4421_001 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Description: MOSFET P-CH 30V 8A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4605 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4605_001 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4703 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET P-CH 20V 3.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-DFN (3x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| AON4705L |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 8DFN
Description: MOSFET P-CH 20V 4A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4803 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3.4A DFN3X2
Description: MOSFET 2P-CH 20V 3.4A DFN3X2
товару немає в наявності
В кошику
од. на суму грн.
| AON4807 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
Description: MOSFET 2P-CH 30V 4A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON4807_001 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
Description: MOSFET 2P-CH 30V 4A 8DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802A |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802ALS |
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
Description: MOSFET N-CH DUAL DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802B |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6DFN
Description: MOSFET 2N-CH 30V 7.2A 6DFN
товару немає в наявності
В кошику
од. на суму грн.
| AON5802B_101 |
|
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
Description: MOSFET N-CH DUAL DFN
товару немає в наявності
В кошику
од. на суму грн.