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AON2803G Alpha & Omega Semiconductor Inc. Description: MOSFET P-CH DUAL
Packaging: Tape & Reel (TR)
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AON2809 AON2809 Alpha & Omega Semiconductor Inc. AON2809.pdf Description: MOSFET 2P-CH 12V 2A 6DFN
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AON2810 AON2810 Alpha & Omega Semiconductor Inc. AON2810.pdf Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2810 AON2810 Alpha & Omega Semiconductor Inc. AON2810.pdf Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2812 AON2812 Alpha & Omega Semiconductor Inc. AON2812.pdf Description: MOSFET 2N-CH 30V 4.5A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON2880 Alpha & Omega Semiconductor Inc. AON2880.pdf Description: MOSFET 2N-CH 20V 7A DFN2X2
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AON3402 AON3402 Alpha & Omega Semiconductor Inc. AON3402.pdf Description: MOSFET N-CH 20V 12.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON3414 AON3414 Alpha & Omega Semiconductor Inc. AON3414.pdf Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)
8+39.12 грн
13+23.28 грн
100+14.83 грн
500+10.49 грн
1000+9.39 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AON3414 AON3414 Alpha & Omega Semiconductor Inc. AON3414.pdf Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+8.83 грн
6000+7.75 грн
Мінімальне замовлення: 3000
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AON3419 AON3419 Alpha & Omega Semiconductor Inc. AON3419.pdf Description: MOSFET P-CH 30V 10A DFN
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AON3611 AON3611 Alpha & Omega Semiconductor Inc. AON3611.pdf Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+14.02 грн
6000+12.51 грн
9000+12.01 грн
15000+10.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AON3611 AON3611 Alpha & Omega Semiconductor Inc. AON3611.pdf Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 20678 шт:
термін постачання 21-31 дні (днів)
5+64.15 грн
10+38.35 грн
100+24.86 грн
500+17.87 грн
1000+16.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AON3613 AON3613 Alpha & Omega Semiconductor Inc. AON3613.pdf Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3613 AON3613 Alpha & Omega Semiconductor Inc. AON3613.pdf Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3806 AON3806 Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET 2N-CH 20V 6A 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON3810 AON3810 Alpha & Omega Semiconductor Inc. AON3810.pdf Description: MOSFET 2N-CH 20V 8DFN
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AON3814 AON3814 Alpha & Omega Semiconductor Inc. AON3814.pdf Description: MOSFET 2N-CH 20V 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON3814L AON3814L Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH DUAL 20V TO252
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AON3816 AON3816 Alpha & Omega Semiconductor Inc. AON3816.pdf Description: MOSFET 2N-CH 20V 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON3816_101 AON3816_101 Alpha & Omega Semiconductor Inc. AON3816.pdf Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3818 AON3818 Alpha & Omega Semiconductor Inc. AON3818.pdf Description: MOSFET 2N-CH 24V 8A 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 24V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON4407 AON4407 Alpha & Omega Semiconductor Inc. AON4407.pdf Description: MOSFET P-CH 12V 9A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
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AON4407_003 AON4407_003 Alpha & Omega Semiconductor Inc. AON4407.pdf Description: MOSFET P-CH 12V 9A 8DFN
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AON4407L AON4407L Alpha & Omega Semiconductor Inc. AON4407L.pdf Description: MOSFET P-CH 12V 9A 8DFN
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
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AON4407L_002 AON4407L_002 Alpha & Omega Semiconductor Inc. AON4407.pdf Description: MOSFET P-CH 12V 9A 8DFN
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AON4407L_003 AON4407L_003 Alpha & Omega Semiconductor Inc. AON4407.pdf Description: MOSFET P-CH 12V 9A 8DFN
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AON4420 AON4420 Alpha & Omega Semiconductor Inc. AON4420L.pdf Description: MOSFET N-CH 30V 10A SFN3X2
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AON4420 AON4420 Alpha & Omega Semiconductor Inc. AON4420L.pdf Description: MOSFET N-CH 30V 10A SFN3X2
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AON4421 AON4421 Alpha & Omega Semiconductor Inc. AON4421.pdf Description: MOSFET P-CH 30V 8A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON4421_001 AON4421_001 Alpha & Omega Semiconductor Inc. AON4421.pdf Description: MOSFET P-CH 30V 8A 8DFN
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AON4605 AON4605 Alpha & Omega Semiconductor Inc. AON4605.pdf Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
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AON4605_001 AON4605_001 Alpha & Omega Semiconductor Inc. AON4605.pdf Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
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AON4703 AON4703 Alpha & Omega Semiconductor Inc. AON4703.pdf Description: MOSFET P-CH 20V 3.4A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON4705L AON4705L Alpha & Omega Semiconductor Inc. AON4705L.pdf Description: MOSFET P-CH 20V 4A 8DFN
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AON4803 AON4803 Alpha & Omega Semiconductor Inc. AON4803.pdf Description: MOSFET 2P-CH 20V 3.4A DFN3X2
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AON4807 AON4807 Alpha & Omega Semiconductor Inc. AON4807.pdf Description: MOSFET 2P-CH 30V 4A 8DFN
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AON4807_001 AON4807_001 Alpha & Omega Semiconductor Inc. AON4807.pdf Description: MOSFET 2P-CH 30V 4A 8DFN
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AON5802A AON5802A Alpha & Omega Semiconductor Inc. AON5802A.pdf Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802A AON5802A Alpha & Omega Semiconductor Inc. AON5802A.pdf Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802A AON5802A Alpha & Omega Semiconductor Inc. AON5802A.pdf Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802ALS Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH DUAL DFN
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AON5802B AON5802B Alpha & Omega Semiconductor Inc. AON5802B.pdf Description: MOSFET 2N-CH 30V 7.2A 6DFN
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AON5802B_101 Alpha & Omega Semiconductor Inc. AON5802B.pdf Description: MOSFET N-CH DUAL DFN
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AON5802BL Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH DUAL 30V 6DFN
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AON5810 AON5810 Alpha & Omega Semiconductor Inc. Description: MOSFET 2N-CH 20V 7.7A 6DFN
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AON5816 AON5816 Alpha & Omega Semiconductor Inc. AON5816.pdf Description: MOSFET 2N-CH 20V 12A 6DFN
Part Status: Active
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON5820 AON5820 Alpha & Omega Semiconductor Inc. AON5820.pdf Description: MOSFET 2N-CH 20V 10A 6DFN
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON5820_101 AON5820_101 Alpha & Omega Semiconductor Inc. AON5820.pdf Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Bulk
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
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AON6104FD Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 8DFN 5X6
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AON6104FH Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 8DFN 5X6
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AON6108FD Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 8DFN 5X6
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AON6108FH Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 8DFN 5X6
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AON6144 AON6144 Alpha & Omega Semiconductor Inc. AON6144.pdf Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
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AON6144 AON6144 Alpha & Omega Semiconductor Inc. AON6144.pdf Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
2+172.11 грн
10+106.52 грн
100+72.74 грн
Мінімальне замовлення: 2
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AON6152 AON6152 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CHANNEL 45V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON6152A AON6152A Alpha & Omega Semiconductor Inc. AON6152A.pdf Description: MOSFET N-CH 45V 58A/100A 8DFN
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
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AON6152A AON6152A Alpha & Omega Semiconductor Inc. AON6152A.pdf Description: MOSFET N-CH 45V 58A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
на замовлення 2976 шт:
термін постачання 21-31 дні (днів)
2+254.26 грн
10+159.86 грн
100+111.35 грн
500+85.02 грн
1000+78.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AON6154 AON6154 Alpha & Omega Semiconductor Inc. AON6154.pdf Description: MOSFET N-CHANNEL 45V 100A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6575 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AON6156 AON6156 Alpha & Omega Semiconductor Inc. AON6156.pdf Description: MOSFET N-CHANNEL 45V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3975 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON6160 AON6160 Alpha & Omega Semiconductor Inc. AON6160.pdf Description: MOSFET N-CHANNEL 60V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 1.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON2803G
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH DUAL
Packaging: Tape & Reel (TR)
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AON2809 AON2809.pdf
AON2809
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 12V 2A 6DFN
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AON2810 AON2810.pdf
AON2810
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2810 AON2810.pdf
AON2810
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2812 AON2812.pdf
AON2812
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 4.5A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON2880 AON2880.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7A DFN2X2
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AON3402 AON3402.pdf
AON3402
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 12.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON3414 AON3414.pdf
AON3414
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.12 грн
13+23.28 грн
100+14.83 грн
500+10.49 грн
1000+9.39 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
AON3414 AON3414.pdf
AON3414
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.83 грн
6000+7.75 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AON3419 AON3419.pdf
AON3419
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 10A DFN
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AON3611 AON3611.pdf
AON3611
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.02 грн
6000+12.51 грн
9000+12.01 грн
15000+10.94 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AON3611 AON3611.pdf
AON3611
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
на замовлення 20678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.15 грн
10+38.35 грн
100+24.86 грн
500+17.87 грн
1000+16.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AON3613 AON3613.pdf
AON3613
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3613 AON3613.pdf
AON3613
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3806 AOSGreenPolicy.pdf
AON3806
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 6A 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON3810 AON3810.pdf
AON3810
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AON3814 AON3814.pdf
AON3814
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON3814L
AON3814L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL 20V TO252
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AON3816 AON3816.pdf
AON3816
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON3816_101 AON3816.pdf
AON3816_101
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 4A 8-DFN
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
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AON3818 AON3818.pdf
AON3818
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 24V 8A 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 24V
Power - Max: 2.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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AON4407 AON4407.pdf
AON4407
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
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AON4407_003 AON4407.pdf
AON4407_003
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
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AON4407L AON4407L.pdf
AON4407L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
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AON4407L_002 AON4407.pdf
AON4407L_002
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
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AON4407L_003 AON4407.pdf
AON4407L_003
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 12V 9A 8DFN
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AON4420 AON4420L.pdf
AON4420
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
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AON4420 AON4420L.pdf
AON4420
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10A SFN3X2
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AON4421 AON4421.pdf
AON4421
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON4421_001 AON4421.pdf
AON4421_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 8A 8DFN
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AON4605 AON4605.pdf
AON4605
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
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AON4605_001 AON4605.pdf
AON4605_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 4.3A/3.4A 8DFN
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AON4703 AON4703.pdf
AON4703
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 3.4A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-DFN (3x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.7W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON4705L AON4705L.pdf
AON4705L
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 4A 8DFN
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AON4803 AON4803.pdf
AON4803
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 20V 3.4A DFN3X2
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AON4807 AON4807.pdf
AON4807
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
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AON4807_001 AON4807.pdf
AON4807_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2P-CH 30V 4A 8DFN
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AON5802A AON5802A.pdf
AON5802A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802A AON5802A.pdf
AON5802A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802A AON5802A.pdf
AON5802A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6-DFN
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AON5802ALS
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
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AON5802B AON5802B.pdf
AON5802B
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 7.2A 6DFN
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AON5802B_101 AON5802B.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL DFN
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AON5802BL
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH DUAL 30V 6DFN
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AON5810
AON5810
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 7.7A 6DFN
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AON5816 AON5816.pdf
AON5816
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 12A 6DFN
Part Status: Active
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON5820 AON5820.pdf
AON5820
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 10A 6DFN
Supplier Device Package: 6-DFN-EP (2x5)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AON5820_101 AON5820.pdf
AON5820_101
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 20V 10A 6DFN
Packaging: Bulk
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN-EP (2x5)
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AON6104FD
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
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AON6104FH
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
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AON6108FD
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
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AON6108FH
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 8DFN 5X6
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AON6144 AON6144.pdf
AON6144
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
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AON6144 AON6144.pdf
AON6144
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.11 грн
10+106.52 грн
100+72.74 грн
Мінімальне замовлення: 2
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AON6152
AON6152
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 45V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
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AON6152A AON6152A.pdf
AON6152A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 45V 58A/100A 8DFN
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
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AON6152A AON6152A.pdf
AON6152A
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 45V 58A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 22.5 V
на замовлення 2976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.26 грн
10+159.86 грн
100+111.35 грн
500+85.02 грн
1000+78.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AON6154 AON6154.pdf
AON6154
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 45V 100A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6575 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
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AON6156 AON6156.pdf
AON6156
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 45V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3975 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
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AON6160 AON6160.pdf
AON6160
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 7790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 1.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
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