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AOWF095A60 AOWF095A60 Alpha & Omega Semiconductor Inc. AOWF095A60.pdf Description: MOSFET N-CH 600V 38A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
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AOWF10N60 AOWF10N60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOWF10N60C Alpha & Omega Semiconductor Inc. Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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AOWF10N60_GV_001#M Alpha & Omega Semiconductor Inc. Description: MOSFET
Packaging: Bulk
Part Status: Last Time Buy
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AOWF10N65 AOWF10N65 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 650V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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AOWF10T60 Alpha & Omega Semiconductor Inc. AOW(F)10T60.pdf Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOWF10T60P Alpha & Omega Semiconductor Inc. AOW10T60P.pdf Description: MOSFET N-CH 600V 10A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
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AOWF11A60 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH TO262F
Packaging: Tape & Reel (TR)
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AOWF11C60 AOWF11C60 Alpha & Omega Semiconductor Inc. AOWF11C60.pdf Description: MOSFET N-CH 600V 11A TO262F
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AOWF11N60 AOWF11N60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
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AOWF11N70 AOWF11N70 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 700V 11A TO262F
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
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AOWF11S60 AOWF11S60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 11A TO262F
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AOWF11S65 AOWF11S65 Alpha & Omega Semiconductor Inc. AOWF11S65.pdf Description: MOSFET N-CH 650V 11A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF125A60 AOWF125A60 Alpha & Omega Semiconductor Inc. AOW125A60.pdf Description: MOSFET N-CH 600V 28A TO262F
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 32.5W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AOWF12N50 AOWF12N50 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 500V 12A TO262F
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
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AOWF12N60 AOWF12N60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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AOWF12N65 AOWF12N65 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 650V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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AOWF12T60 Alpha & Omega Semiconductor Inc. AOWF12T60.pdf Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
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AOWF12T60P AOWF12T60P Alpha & Omega Semiconductor Inc. AOWF12T60P.pdf Description: MOSFET N-CH 600V 12A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
4+86.81 грн
50+63.34 грн
100+60.29 грн
500+50.47 грн
Мінімальне замовлення: 4 шт
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AOWF14N50 AOWF14N50 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 500V 14A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOWF15S60 AOWF15S60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 15A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF15S65 AOWF15S65 Alpha & Omega Semiconductor Inc. AOWF15S65.pdf Description: MOSFET N-CH 650V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
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AOWF160A60 AOWF160A60 Alpha & Omega Semiconductor Inc. AOWF160A60.pdf Description: MOSFET N-CH 600V 24A TO262F
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
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AOWF190A60 Alpha & Omega Semiconductor Inc. AOWF190A60.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOWF190A60C AOWF190A60C Alpha & Omega Semiconductor Inc. AOWF190A60C.pdf Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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AOWF20S60 AOWF20S60 Alpha & Omega Semiconductor Inc. TO262F.pdf Description: MOSFET N-CH 600V 20A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF240 AOWF240 Alpha & Omega Semiconductor Inc. AOWF240.pdf Description: MOSFET N-CH 40V 21A/83A
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF25S65 AOWF25S65 Alpha & Omega Semiconductor Inc. AOWF25S65.pdf Description: MOSFET N-CH 650V 25A TO262F
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF2606 AOWF2606 Alpha & Omega Semiconductor Inc. AOWF2606.pdf Description: MOSFET N-CH 60V 13A/51A TO262F
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF296 AOWF296 Alpha & Omega Semiconductor Inc. AOWF296.pdf Description: MOSFET N-CH 100V 37A TO262F
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF360A70 AOWF360A70 Alpha & Omega Semiconductor Inc. AOW360A70.pdf Description: MOSFET N-CH 700V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
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 Мінімальне замовлення: 1000 шт
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AOWF380A60C AOWF380A60C Alpha & Omega Semiconductor Inc. AOWF380A60C.pdf Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
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 Мінімальне замовлення: 1000 шт
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AOWF412 AOWF412 Alpha & Omega Semiconductor Inc. AOWF412.pdf Description: MOSFET N-CH 100V 7.8A/30A
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF450A70 Alpha & Omega Semiconductor Inc. AOWF450A70.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
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 Мінімальне замовлення: 1000 шт
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AOWF4N60 AOWF4N60 Alpha & Omega Semiconductor Inc. AOWF4N60.pdf Description: MOSFET N-CH 600V 4A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Last Time Buy
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AOWF4S60 AOWF4S60 Alpha & Omega Semiconductor Inc. AOWF4S60.pdf Description: MOSFET N-CH 600V 4A TO262F
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
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 Мінімальне замовлення: 1000 шт
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AOWF600A60 AOWF600A60 Alpha & Omega Semiconductor Inc. AOWF600A60.pdf Description: MOSFET N-CH 600V 8A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
3+153.29 грн
10+132.70 грн
100+106.66 грн
500+82.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
AOWF600A70 AOWF600A70 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
2+163.45 грн
10+141.06 грн
100+113.40 грн
500+87.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AOWF600A70F AOWF600A70F Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
2+163.45 грн
10+141.06 грн
100+113.40 грн
500+87.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AOWF7S60 AOWF7S60 Alpha & Omega Semiconductor Inc. AOWF7S60.pdf Description: MOSFET N-CH 600V 7A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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AOWF7S65 AOWF7S65 Alpha & Omega Semiconductor Inc. AOWF7S65.pdf Description: MOSFET N-CH 650V 7A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF8N50 AOWF8N50 Alpha & Omega Semiconductor Inc. AOWF8N50.pdf Description: MOSFET N-CH 500V 8A TO262F
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
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AOWF9N70 AOWF9N70 Alpha & Omega Semiconductor Inc. AOWF9N70.pdf Description: MOSFET N-CH 700V 9A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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AOY2610E Alpha & Omega Semiconductor Inc. AOY2610E.pdf Description: MOSFET N-CHANNEL 60V 19A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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AOY2N60 AOY2N60 Alpha & Omega Semiconductor Inc. AOY2N60.pdf Description: MOSFET N-CH
товару немає в наявності
 Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY4158P Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH
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AOY423 AOY423 Alpha & Omega Semiconductor Inc. AOD423.pdf Description: MOSFET P-CH 30V 15A/70A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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 Мінімальне замовлення: 3500 шт
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AOY514 AOY514 Alpha & Omega Semiconductor Inc. AOY514.pdf Description: MOSFET N-CH
товару немає в наявності
 Мінімальне замовлення: 3500 шт
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AOY516 AOY516 Alpha & Omega Semiconductor Inc. AO(D,I,Y)516.pdf Description: MOSFET N-CH TO251B
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AOY526 AOY526 Alpha & Omega Semiconductor Inc. Description: MOSFET N-CH 30V 18A/50A TO251B
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
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AOY528 AOY528 Alpha & Omega Semiconductor Inc. AOY528.pdf Description: MOSFET N-CH
товару немає в наявності
 Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY66923 AOY66923 Alpha & Omega Semiconductor Inc. AOY66923.pdf Description: MOSFET N-CH 100V 16.5/58A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 5373 шт:
термін постачання 21-31 дні (днів)
3+120.44 грн
70+52.39 грн
140+46.97 грн
560+36.18 грн
1050+33.40 грн
2030+30.92 грн
5040+27.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
AOZ1010AI_5 Alpha & Omega Semiconductor Inc. AOZ1010.pdf Description: IC REG BUCK ADJUSTABLE 2A 8SO
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AOZ1012DI AOZ1012DI Alpha & Omega Semiconductor Inc. AOZ1012DI.pdf Description: IC REG BUCK ADJ 3A 8DFN
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.8V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AOZ1014AI AOZ1014AI Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8SOIC
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AOZ1014AIL_3 AOZ1014AIL_3 Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
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AOZ1014DI AOZ1014DI Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8DFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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AOZ1014DI_001 AOZ1014DI_001 Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-DFN (4x5)
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
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AOZ1014DI_001#A AOZ1014DI_001#A Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-DFN (4x5)
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
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AOZ1014DIL_001 AOZ1014DIL_001 Alpha & Omega Semiconductor Inc. AOZ1014AI.pdf Description: IC REG BUCK ADJ 5A 8DFN
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
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AOWF095A60 AOWF095A60.pdf
AOWF095A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 38A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
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Мінімальне замовлення: 1000 шт
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AOWF10N60 TO262F.pdf
AOWF10N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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AOWF10N60C
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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AOWF10N60_GV_001#M
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET
Packaging: Bulk
Part Status: Last Time Buy
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AOWF10N65 TO262F.pdf
AOWF10N65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
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Мінімальне замовлення: 1000 шт
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AOWF10T60 AOW(F)10T60.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
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AOWF10T60P AOW10T60P.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 10A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
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AOWF11A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO262F
Packaging: Tape & Reel (TR)
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AOWF11C60 AOWF11C60.pdf
AOWF11C60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262F
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AOWF11N60 TO262F.pdf
AOWF11N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
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AOWF11N70 TO262F.pdf
AOWF11N70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 11A TO262F
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
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AOWF11S60 TO262F.pdf
AOWF11S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262F
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AOWF11S65 AOWF11S65.pdf
AOWF11S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 11A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF125A60 AOW125A60.pdf
AOWF125A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 28A TO262F
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 32.5W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AOWF12N50 TO262F.pdf
AOWF12N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 12A TO262F
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
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AOWF12N60 TO262F.pdf
AOWF12N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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AOWF12N65 TO262F.pdf
AOWF12N65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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AOWF12T60 AOWF12T60.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
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AOWF12T60P AOWF12T60P.pdf
AOWF12T60P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 938 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+86.81 грн
50+63.34 грн
100+60.29 грн
500+50.47 грн
Мінімальне замовлення: 4 шт
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AOWF14N50 TO262F.pdf
AOWF14N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 14A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
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AOWF15S60 TO262F.pdf
AOWF15S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 15A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF15S65 AOWF15S65.pdf
AOWF15S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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AOWF160A60 AOWF160A60.pdf
AOWF160A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 24A TO262F
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
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AOWF190A60 AOWF190A60.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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AOWF190A60C AOWF190A60C.pdf
AOWF190A60C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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AOWF20S60 TO262F.pdf
AOWF20S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 20A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF240 AOWF240.pdf
AOWF240
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 21A/83A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF25S65 AOWF25S65.pdf
AOWF25S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 25A TO262F
товару немає в наявності
Мінімальне замовлення: 1000 шт
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AOWF2606 AOWF2606.pdf
AOWF2606
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 13A/51A TO262F
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF296 AOWF296.pdf
AOWF296
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 37A TO262F
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF360A70 AOW360A70.pdf
AOWF360A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF380A60C AOWF380A60C.pdf
AOWF380A60C
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF412 AOWF412.pdf
AOWF412
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 7.8A/30A
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF450A70 AOWF450A70.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF4N60 AOWF4N60.pdf
AOWF4N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Last Time Buy
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AOWF4S60 AOWF4S60.pdf
AOWF4S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 4A TO262F
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF600A60 AOWF600A60.pdf
AOWF600A60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 8A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+153.29 грн
10+132.70 грн
100+106.66 грн
500+82.24 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
AOWF600A70
AOWF600A70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 997 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+163.45 грн
10+141.06 грн
100+113.40 грн
500+87.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AOWF600A70F
AOWF600A70F
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 8.5A TO262F
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+163.45 грн
10+141.06 грн
100+113.40 грн
500+87.44 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
AOWF7S60 AOWF7S60.pdf
AOWF7S60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 7A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
AOWF7S65 AOWF7S65.pdf
AOWF7S65
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 650V 7A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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AOWF8N50 AOWF8N50.pdf
AOWF8N50
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 500V 8A TO262F
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
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AOWF9N70 AOWF9N70.pdf
AOWF9N70
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 700V 9A TO262F
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-262F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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AOY2610E AOY2610E.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 19A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 59.5W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY2N60 AOY2N60.pdf
AOY2N60
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY4158P
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
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AOY423 AOD423.pdf
AOY423
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 15A/70A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 20V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY514 AOY514.pdf
AOY514
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY516 AO(D,I,Y)516.pdf
AOY516
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH TO251B
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AOY526
AOY526
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 18A/50A TO251B
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
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AOY528 AOY528.pdf
AOY528
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику  од. на суму  грн.
AOY66923 AOY66923.pdf
AOY66923
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5/58A TO251B
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251B
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 5373 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+120.44 грн
70+52.39 грн
140+46.97 грн
560+36.18 грн
1050+33.40 грн
2030+30.92 грн
5040+27.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
AOZ1010AI_5 AOZ1010.pdf
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJUSTABLE 2A 8SO
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AOZ1012DI AOZ1012DI.pdf
AOZ1012DI
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 3A 8DFN
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.8V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AOZ1014AI AOZ1014AI.pdf
AOZ1014AI
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8SOIC
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AOZ1014AIL_3 AOZ1014AI.pdf
AOZ1014AIL_3
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
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AOZ1014DI AOZ1014AI.pdf
AOZ1014DI
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8DFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
AOZ1014DI_001 AOZ1014AI.pdf
AOZ1014DI_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-DFN (4x5)
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
AOZ1014DI_001#A AOZ1014AI.pdf
AOZ1014DI_001#A
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 8-DFN (4x5)
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
AOZ1014DIL_001 AOZ1014AI.pdf
AOZ1014DIL_001
Виробник: Alpha & Omega Semiconductor Inc.
Description: IC REG BUCK ADJ 5A 8DFN
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 16V
Synchronous Rectifier: No
Supplier Device Package: 8-DFN (4x5)
Topology: Buck
Voltage - Input (Max): 16V
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
товару немає в наявності
В кошику  од. на суму  грн.
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