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2N6027 TRA PBFREE Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6027 TRA TIN/LEAD Central Semiconductor Corp Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N5172 APM PBFREE 2N5172 APM PBFREE Central Semiconductor Corp Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TRE PBFREE 2N5172 TRE PBFREE Central Semiconductor Corp Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TIN/LEAD 2N5172 TIN/LEAD Central Semiconductor Corp Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 APM TIN/LEAD 2N5172 APM TIN/LEAD Central Semiconductor Corp Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TRE TIN/LEAD 2N5172 TRE TIN/LEAD Central Semiconductor Corp Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPSA93 PBFREE MPSA93 PBFREE Central Semiconductor Corp MPSA92-93.PDF Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSA93 TIN/LEAD MPSA93 TIN/LEAD Central Semiconductor Corp MPSA92-93.PDF Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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1N4749A BK PBFREE Central Semiconductor Corp Description: 24V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1N4749A TR TIN/LEAD Central Semiconductor Corp Description: 24V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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2N4393 TIN/LEAD 2N4393 TIN/LEAD Central Semiconductor Corp Description: .5V 3V 50MA 1.8W TH JFET N CHANN
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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BC309B PBFREE Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA
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BC309B TIN/LEAD Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA
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BDV65B BDV65B Central Semiconductor Corp LSSGP091.PDF Description: TRANS NPN 100V 12A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: 60MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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MPSA42 APM PBFREE MPSA42 APM PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 TRE PBFREE MPSA42 TRE PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 PBFREE MPSA42 PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 APM TIN/LEAD MPSA42 APM TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 TRE TIN/LEAD MPSA42 TRE TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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BC327-25 TRE TIN/LEAD Central Semiconductor Corp Description: 45V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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CMPZDA43V TR TIN/LEAD CMPZDA43V TR TIN/LEAD Central Semiconductor Corp Description: 43V 350MW SMD DIODE-ZENER DUAL:
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
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CMPZDA43V TR PBFREE CMPZDA43V TR PBFREE Central Semiconductor Corp Description: 43V 350MW SMD DIODE-ZENER DUAL:
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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1N4751A BK TIN/LEAD Central Semiconductor Corp Description: 30V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
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2N3905 TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 TRE PBFREE 2N3905 TRE PBFREE Central Semiconductor Corp 2N3905.PDF Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 APM PBFREE 2N3905 APM PBFREE Central Semiconductor Corp LSSGP072.PDF Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 TRE TIN/LEAD 2N3905 TRE TIN/LEAD Central Semiconductor Corp 2N3905.PDF Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 APM TIN/LEAD Central Semiconductor Corp Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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1N4755A BK TIN/LEAD 1N4755A BK TIN/LEAD Central Semiconductor Corp Description: 43V 1W TH DIODE-ZENER SINGLE: ST
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Box
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1N4734A BK TIN/LEAD Central Semiconductor Corp Description: TH DIODE-ZENER SINGLE: STANDARD
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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MPSA56 TRE PBFREE MPSA56 TRE PBFREE Central Semiconductor Corp LSSGP076.PDF Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 APM PBFREE Central Semiconductor Corp Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 TIN/LEAD Central Semiconductor Corp Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 TRE TIN/LEAD MPSA56 TRE TIN/LEAD Central Semiconductor Corp LSSGP076.PDF Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 APM TIN/LEAD Central Semiconductor Corp Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA92 TRE PBFREE MPSA92 TRE PBFREE Central Semiconductor Corp MPSA92-93.PDF Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 APP PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRA PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 APM PBFREE Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRE TIN/LEAD MPSA92 TRE TIN/LEAD Central Semiconductor Corp LSSGP076.PDF Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 APM TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 APP TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRA TIN/LEAD Central Semiconductor Corp Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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CTLSH10-45L TR13 PBFREE CTLSH10-45L TR13 PBFREE Central Semiconductor Corp Description: 10A 45V SMD RECTIFIER-SCHOTTKY (
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TLM364
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 400pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 45 V
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2N2712 PBFREE 2N2712 PBFREE Central Semiconductor Corp LSSGP072.PDF Description: 18V 100MA 200MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 18 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N2712 TIN/LEAD 2N2712 TIN/LEAD Central Semiconductor Corp LSSGP072.PDF Description: 18V 100MA 200MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 18 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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MPSA14 APM PBFREE Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 PBFREE Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 TRE PBFREE Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 APM TIN/LEAD Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 TRE TIN/LEAD Central Semiconductor Corp Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N6045 PBFREE Central Semiconductor Corp Description: 8A 100V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 75 W
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CMPF4393 TR TIN/LEAD CMPF4393 TR TIN/LEAD Central Semiconductor Corp Description: .5V 3V 50MA 350MW SMD JFET N CHA
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 350 mW
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CMPF4391 TR PBFREE CMPF4391 TR PBFREE Central Semiconductor Corp Description: 4V 10V 50MA 350MW SMD JFET N CHA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 350 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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1N4745A BK PBFREE Central Semiconductor Corp Description: 16V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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1N4745A TR TIN/LEAD Central Semiconductor Corp Description: 16V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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2N5087 APP PBFREE Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APM PBFREE 2N5087 APM PBFREE Central Semiconductor Corp 2N5086.PDF Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N6027 TRA PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N6027 TRA TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 150MA TH PROGRAMMABLE UJT
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Voltage - Output: 6V
Voltage: 40V
Current - Peak: 2 µA
Voltage - Offset (Vt): 1.6 V
Current - Valley (Iv): 50 µA
Current - Gate to Anode Leakage (Igao): 10 nA
Power Dissipation (Max): 300 mW
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2N5172 APM PBFREE
2N5172 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TRE PBFREE
2N5172 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TIN/LEAD
2N5172 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 APM TIN/LEAD
2N5172 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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2N5172 TRE TIN/LEAD
2N5172 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 100MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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MPSA93 PBFREE MPSA92-93.PDF
MPSA93 PBFREE
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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MPSA93 TIN/LEAD MPSA92-93.PDF
MPSA93 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
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1N4749A BK PBFREE
Виробник: Central Semiconductor Corp
Description: 24V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1N4749A TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 24V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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2N4393 TIN/LEAD
2N4393 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: .5V 3V 50MA 1.8W TH JFET N CHANN
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8 W
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
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BC309B PBFREE
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA
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BC309B TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 10mA
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BDV65B LSSGP091.PDF
BDV65B
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 12A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: 60MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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MPSA42 APM PBFREE
MPSA42 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 TRE PBFREE
MPSA42 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 PBFREE
MPSA42 PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 APM TIN/LEAD
MPSA42 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA42 TRE TIN/LEAD
MPSA42 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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BC327-25 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
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CMPZDA43V TR TIN/LEAD
CMPZDA43V TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 43V 350MW SMD DIODE-ZENER DUAL:
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 150 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 175°C (TJ)
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
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CMPZDA43V TR PBFREE
CMPZDA43V TR PBFREE
Виробник: Central Semiconductor Corp
Description: 43V 350MW SMD DIODE-ZENER DUAL:
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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1N4751A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
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2N3905 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 TRE PBFREE 2N3905.PDF
2N3905 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 APM PBFREE LSSGP072.PDF
2N3905 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 TRE TIN/LEAD 2N3905.PDF
2N3905 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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2N3905 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 200MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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1N4755A BK TIN/LEAD
1N4755A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 43V 1W TH DIODE-ZENER SINGLE: ST
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Box
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1N4734A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH DIODE-ZENER SINGLE: STANDARD
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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MPSA56 TRE PBFREE LSSGP076.PDF
MPSA56 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 TRE TIN/LEAD LSSGP076.PDF
MPSA56 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA56 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 80V 500MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
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MPSA92 TRE PBFREE MPSA92-93.PDF
MPSA92 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 APP PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRA PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRE TIN/LEAD LSSGP076.PDF
MPSA92 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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MPSA92 APP TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
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MPSA92 TRA TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 300V 500MA 625MW TH TRANSISTOR-S
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 300 V
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CTLSH10-45L TR13 PBFREE
CTLSH10-45L TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 10A 45V SMD RECTIFIER-SCHOTTKY (
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TLM364
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 400pF @ 10V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 45 V
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2N2712 PBFREE LSSGP072.PDF
2N2712 PBFREE
Виробник: Central Semiconductor Corp
Description: 18V 100MA 200MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 18 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N2712 TIN/LEAD LSSGP072.PDF
2N2712 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 18V 100MA 200MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 18 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Current - Collector Cutoff (Max): 500nA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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MPSA14 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 PBFREE
Виробник: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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MPSA14 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 500MA 30V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N6045 PBFREE
Виробник: Central Semiconductor Corp
Description: 8A 100V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 75 W
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CMPF4393 TR TIN/LEAD
CMPF4393 TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: .5V 3V 50MA 350MW SMD JFET N CHA
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Resistance - RDS(On): 100 Ohms
Power - Max: 350 mW
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CMPF4391 TR PBFREE
CMPF4391 TR PBFREE
Виробник: Central Semiconductor Corp
Description: 4V 10V 50MA 350MW SMD JFET N CHA
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 350 mW
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: SOT-23
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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1N4745A BK PBFREE
Виробник: Central Semiconductor Corp
Description: 16V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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1N4745A TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 16V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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2N5087 APP PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APM PBFREE 2N5086.PDF
2N5087 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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