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2N5087 TRE PBFREE 2N5087 TRE PBFREE Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APM TIN/LEAD 2N5087 APM TIN/LEAD Central Semiconductor Corp 2N5086.PDF Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APP TIN/LEAD Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRE TIN/LEAD 2N5087 TRE TIN/LEAD Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TIN/LEAD 2N5087 TIN/LEAD Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRA PBFREE Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRA TIN/LEAD Central Semiconductor Corp Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N4402 PBFREE 2N4402 PBFREE Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4402 TRE PBFREE 2N4402 TRE PBFREE Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
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2N4402 APM PBFREE 2N4402 APM PBFREE Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
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2N4402 TIN/LEAD 2N4402 TIN/LEAD Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4402 TRE TIN/LEAD 2N4402 TRE TIN/LEAD Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
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2N4402 APM TIN/LEAD 2N4402 APM TIN/LEAD Central Semiconductor Corp Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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P6SMB18CA TR13 PBFREE P6SMB18CA TR13 PBFREE Central Semiconductor Corp Description: 600W 15.3V SMD TRANSIENT VOLTAGE
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 24A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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BCX53-16 TR PBFREE Central Semiconductor Corp Description: 80V 1A 1.3W SMD TRANSISTOR-SMALL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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1N4750A BK TIN/LEAD 1N4750A BK TIN/LEAD Central Semiconductor Corp 1N4728A-4764A.PDF Description: 27V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N4752A BK TIN/LEAD Central Semiconductor Corp Description: 33V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
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BC856AT TR PBFREE BC856AT TR PBFREE Central Semiconductor Corp BC856T-57T_SERIES.PDF Description: 65V 100MA 250MW SMD TRANSISTOR-S
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
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1N5226B BK TIN/LEAD 1N5226B BK TIN/LEAD Central Semiconductor Corp Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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2N3704 TRE PBFREE 2N3704 TRE PBFREE Central Semiconductor Corp Description: 30V 800MA 625MW TH TRANSISTOR-SM
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
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2N3704 APM PBFREE 2N3704 APM PBFREE Central Semiconductor Corp Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N3704 APM TIN/LEAD 2N3704 APM TIN/LEAD Central Semiconductor Corp Description: 30V 800MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
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2N3704 TRE TIN/LEAD 2N3704 TRE TIN/LEAD Central Semiconductor Corp Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N3704 TIN/LEAD 2N3704 TIN/LEAD Central Semiconductor Corp Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4920 PBFREE 2N4920 PBFREE Central Semiconductor Corp Description: 80V 1A 30W TH TRANSISTOR-BIPOLAR
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
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2N5823 PBFREE 2N5823 PBFREE Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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2N5823 TRE PBFREE 2N5823 TRE PBFREE Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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2N5823 APM PBFREE 2N5823 APM PBFREE Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N5823 APM TIN/LEAD 2N5823 APM TIN/LEAD Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N5823 TRE TIN/LEAD 2N5823 TRE TIN/LEAD Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N5823 TIN/LEAD 2N5823 TIN/LEAD Central Semiconductor Corp 2N5822-5823.PDF Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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CSHDD16-60C TR13 PBFREE CSHDD16-60C TR13 PBFREE Central Semiconductor Corp Description: 16A 60V SMD RECTIFIER-SCHOTTKY (
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
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BC237B TRE PBFREE BC237B TRE PBFREE Central Semiconductor Corp Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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BC237B APM PBFREE BC237B APM PBFREE Central Semiconductor Corp Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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BC237B APM TIN/LEAD BC237B APM TIN/LEAD Central Semiconductor Corp Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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BC237B TIN/LEAD BC237B TIN/LEAD Central Semiconductor Corp Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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BC237B TRE TIN/LEAD BC237B TRE TIN/LEAD Central Semiconductor Corp Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N1711 TIN/LEAD 2N1711 TIN/LEAD Central Semiconductor Corp Description: 500MA 800MW TH TRANSISTOR-SMALL
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-39
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
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P6KE13CA TR TIN/LEAD P6KE13CA TR TIN/LEAD Central Semiconductor Corp Description: 600W 11.1V TH TRANSIENT VOLTAGE
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 33A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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1N4758A BK TIN/LEAD 1N4758A BK TIN/LEAD Central Semiconductor Corp 1N4728A-4764A.PDF Description: 56V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V
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CMLSH1-40G TR PBFREE CMLSH1-40G TR PBFREE Central Semiconductor Corp Description: 1A 40V SMD RECTIFIER-SCHOTTKY (>
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 290 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-563
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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2N3440 TIN/LEAD 2N3440 TIN/LEAD Central Semiconductor Corp 2N3439.PDF Description: 250V 1A 1W TH TRANSISTOR-SMALL S
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
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2N4123 APM PBFREE 2N4123 APM PBFREE Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N4123 TRE PBFREE 2N4123 TRE PBFREE Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N4123 TRE TIN/LEAD 2N4123 TRE TIN/LEAD Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
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2N4123 APM TIN/LEAD 2N4123 APM TIN/LEAD Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N4123 TIN/LEAD 2N4123 TIN/LEAD Central Semiconductor Corp Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4124 TRA PBFREE 2N4124 TRA PBFREE Central Semiconductor Corp Description: 25V 200MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N4124 TRE PBFREE 2N4124 TRE PBFREE Central Semiconductor Corp Description: 25V 200MA 625MW TH TRANSISTOR-SM
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
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2N4124 APM PBFREE 2N4124 APM PBFREE Central Semiconductor Corp Description: 25V 200MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
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P6KE36CA TR PBFREE P6KE36CA TR PBFREE Central Semiconductor Corp Description: 600W 30.8V TH TRANSIENT VOLTAGE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-15
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1N4746A BK TIN/LEAD Central Semiconductor Corp Description: 18V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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2N2905A TIN/LEAD 2N2905A TIN/LEAD Central Semiconductor Corp 2N2904-5A.PDF Description: 60V 600MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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BC858B TR PBFREE BC858B TR PBFREE Central Semiconductor Corp Description: 30V 100MA 330MW SMD TRANSISTOR-S
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
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MPSA45 PBFREE MPSA45 PBFREE Central Semiconductor Corp Description: 350V 300MA 625MW TH TRANSISTOR-S
Supplier Device Package: TO-92-3
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 300 mA
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MPSA45 TIN/LEAD MPSA45 TIN/LEAD Central Semiconductor Corp Description: 350V 300MA 625MW TH TRANSISTOR-S
Supplier Device Package: TO-92-3
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 300 mA
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BC107A PBFREE BC107A PBFREE Central Semiconductor Corp Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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BC107A TIN/LEAD BC107A TIN/LEAD Central Semiconductor Corp Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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BC107 TIN/LEAD BC107 TIN/LEAD Central Semiconductor Corp Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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1N5533B TR PBFREE 1N5533B TR PBFREE Central Semiconductor Corp Description: 13V 400MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 400 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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2N5087 TRE PBFREE
2N5087 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APM TIN/LEAD 2N5086.PDF
2N5087 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 APP TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRE TIN/LEAD
2N5087 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TIN/LEAD
2N5087 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRA PBFREE
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N5087 TRA TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 50V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.5 W
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2N4402 PBFREE
2N4402 PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4402 TRE PBFREE
2N4402 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
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2N4402 APM PBFREE
2N4402 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
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2N4402 TIN/LEAD
2N4402 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4402 TRE TIN/LEAD
2N4402 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
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2N4402 APM TIN/LEAD
2N4402 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 40V 600MA 625MW TH TRANSISTOR-SM
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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P6SMB18CA TR13 PBFREE
P6SMB18CA TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 600W 15.3V SMD TRANSIENT VOLTAGE
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.2V
Voltage - Breakdown (Min): 17.1V
Bidirectional Channels: 1
Supplier Device Package: SMB
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 24A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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BCX53-16 TR PBFREE
Виробник: Central Semiconductor Corp
Description: 80V 1A 1.3W SMD TRANSISTOR-SMALL
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.3 W
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1N4750A BK TIN/LEAD 1N4728A-4764A.PDF
1N4750A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 27V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N4752A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 33V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
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BC856AT TR PBFREE BC856T-57T_SERIES.PDF
BC856AT TR PBFREE
Виробник: Central Semiconductor Corp
Description: 65V 100MA 250MW SMD TRANSISTOR-S
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
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1N5226B BK TIN/LEAD
1N5226B BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
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2N3704 TRE PBFREE
2N3704 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
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2N3704 APM PBFREE
2N3704 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N3704 APM TIN/LEAD
2N3704 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
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2N3704 TRE TIN/LEAD
2N3704 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N3704 TIN/LEAD
2N3704 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 800MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4920 PBFREE
2N4920 PBFREE
Виробник: Central Semiconductor Corp
Description: 80V 1A 30W TH TRANSISTOR-BIPOLAR
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
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2N5823 PBFREE 2N5822-5823.PDF
2N5823 PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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2N5823 TRE PBFREE 2N5822-5823.PDF
2N5823 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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2N5823 APM PBFREE 2N5822-5823.PDF
2N5823 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N5823 APM TIN/LEAD 2N5822-5823.PDF
2N5823 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N5823 TRE TIN/LEAD 2N5822-5823.PDF
2N5823 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N5823 TIN/LEAD 2N5822-5823.PDF
2N5823 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 750MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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CSHDD16-60C TR13 PBFREE
CSHDD16-60C TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 16A 60V SMD RECTIFIER-SCHOTTKY (
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
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BC237B TRE PBFREE
BC237B TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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BC237B APM PBFREE
BC237B APM PBFREE
Виробник: Central Semiconductor Corp
Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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BC237B APM TIN/LEAD
BC237B APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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BC237B TIN/LEAD
BC237B TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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BC237B TRE TIN/LEAD
BC237B TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 100MA 300MW TH TRANSISTOR-SM
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N1711 TIN/LEAD
2N1711 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-39
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
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P6KE13CA TR TIN/LEAD
P6KE13CA TR TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 600W 11.1V TH TRANSIENT VOLTAGE
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 18.2V
Voltage - Breakdown (Min): 12.4V
Bidirectional Channels: 1
Supplier Device Package: DO-15
Voltage - Reverse Standoff (Typ): 11.1V
Current - Peak Pulse (10/1000µs): 33A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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1N4758A BK TIN/LEAD 1N4728A-4764A.PDF
1N4758A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 56V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 42.6 V
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CMLSH1-40G TR PBFREE
CMLSH1-40G TR PBFREE
Виробник: Central Semiconductor Corp
Description: 1A 40V SMD RECTIFIER-SCHOTTKY (>
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 290 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-563
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 15 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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2N3440 TIN/LEAD 2N3439.PDF
2N3440 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 250V 1A 1W TH TRANSISTOR-SMALL S
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-39
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Box
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2N4123 APM PBFREE
2N4123 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N4123 TRE PBFREE
2N4123 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N4123 TRE TIN/LEAD
2N4123 TRE TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
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2N4123 APM TIN/LEAD
2N4123 APM TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
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2N4123 TIN/LEAD
2N4123 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 200MA 625MW TH TRANSISTOR-SM
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
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2N4124 TRA PBFREE
2N4124 TRA PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 200MA 625MW TH TRANSISTOR-SM
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
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2N4124 TRE PBFREE
2N4124 TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 200MA 625MW TH TRANSISTOR-SM
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
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2N4124 APM PBFREE
2N4124 APM PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 200MA 625MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 50nA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Box (TB)
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
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P6KE36CA TR PBFREE
P6KE36CA TR PBFREE
Виробник: Central Semiconductor Corp
Description: 600W 30.8V TH TRANSIENT VOLTAGE
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 12A
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-15
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1N4746A BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 18V 1W TH DIODE-ZENER SINGLE: ST
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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2N2905A TIN/LEAD 2N2904-5A.PDF
2N2905A TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 60V 600MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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BC858B TR PBFREE
BC858B TR PBFREE
Виробник: Central Semiconductor Corp
Description: 30V 100MA 330MW SMD TRANSISTOR-S
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
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MPSA45 PBFREE
MPSA45 PBFREE
Виробник: Central Semiconductor Corp
Description: 350V 300MA 625MW TH TRANSISTOR-S
Supplier Device Package: TO-92-3
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 300 mA
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MPSA45 TIN/LEAD
MPSA45 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 350V 300MA 625MW TH TRANSISTOR-S
Supplier Device Package: TO-92-3
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Box
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 300 mA
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BC107A PBFREE
BC107A PBFREE
Виробник: Central Semiconductor Corp
Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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BC107A TIN/LEAD
BC107A TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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BC107 TIN/LEAD
BC107 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 600 mW
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1N5533B TR PBFREE
1N5533B TR PBFREE
Виробник: Central Semiconductor Corp
Description: 13V 400MW TH DIODE-ZENER SINGLE:
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 400 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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