Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (8060) > Сторінка 123 з 135
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4759A TR TIN/LEAD | Central Semiconductor Corp |
Description: 62V 1W TH DIODE-ZENER SINGLE: STTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||
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1N4759A BK TIN/LEAD | Central Semiconductor Corp |
Description: 62V 1W TH DIODE-ZENER SINGLE: STTolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||
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1SMB10CA TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 10V SMD TRANSIENT VOLTAGE S Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
| 2N6297 PBFREE | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Tube Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-66 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | |||||||||||
| 2N6297 TIN/LEAD | Central Semiconductor Corp |
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-66 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Current - Collector Cutoff (Max): 500µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | |||||||||||
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CRU24715-600 SL | Central Semiconductor Corp |
Description: RECTIFIER-ULTRA FAST <100Packaging: Tube |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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CRU24730-600 SL | Central Semiconductor Corp |
Description: RECTIFIER-ULTRA FAST <100Packaging: Tube |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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| 2N2369A TIN/LEAD | Central Semiconductor Corp |
Description: 15V 200MA 360MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
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1N755A BK TIN/LEAD | Central Semiconductor Corp |
Description: 7.5V 500MW TH DIODE-ZENER SINGLE Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
| CBR2-L060M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 600V 2A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| CBR1-L040M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 400V 1.5A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1435 шт В кошику од. на суму грн. | |||||||||||
| CBR2-L010M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 100V 2A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | |||||||||||
| CBR2-L040M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 400V 2A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | |||||||||||
| CBR2-L080M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 800V 2A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1375 шт В кошику од. на суму грн. | |||||||||||
| CBR1-L080M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 800V 1.5A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 1365 шт В кошику од. на суму грн. | |||||||||||
| CBR2-L100M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 1KV 2A B-MPackaging: Bulk Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -65°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: B-M Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 1295 шт В кошику од. на суму грн. | |||||||||||
| CBR1-L010M PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 100V 1.5A B-MCurrent - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 100 V Supplier Device Package: B-M Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CBR1-L020M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 200V 1.5A B-MCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: B-M Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CBR1-L100M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 1KV 1.5A B-MCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Average Rectified (Io): 1.5 A Voltage - Peak Reverse (Max): 1 kV Supplier Device Package: B-M Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| CBR2-L020M PBFREE | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 200V 2A B-MCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: B-M Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| 3N255-M | Central Semiconductor Corp |
Description: BRIDGE RECT 1PHASE 200V 2A B-MMounting Type: Through Hole Package / Case: 4-SIP Packaging: Bulk Supplier Device Package: B-M Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A Current - Average Rectified (Io): 2 A Voltage - Peak Reverse (Max): 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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1N754A BK TIN/LEAD | Central Semiconductor Corp |
Description: 6.8V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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1N756A BK TIN/LEAD | Central Semiconductor Corp |
Description: 8.2V 500MW TH DIODE-ZENER SINGLE Current - Reverse Leakage @ Vr: 100 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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1N4621 TR TIN/LEAD | Central Semiconductor Corp |
Description: 3.6V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 1700 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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1N4621 BK TIN/LEAD | Central Semiconductor Corp |
Description: 3.6V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 1700 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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1N4622 TR TIN/LEAD | Central Semiconductor Corp |
Description: 3.9V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
|
1N4622 BK TIN/LEAD | Central Semiconductor Corp |
Description: 3.9V 250MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 1650 Ohms Supplier Device Package: DO-35 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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PN3563 TRE PBFREE | Central Semiconductor Corp |
Description: 12V 50MA 625MW TH TRANSISTOR-SMA Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Supplier Device Package: TO-92-3 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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PN3563 TIN/LEAD | Central Semiconductor Corp |
Description: 12V 50MA 625MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Supplier Device Package: TO-92-3 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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PN3563 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 12V 50MA 625MW TH TRANSISTOR-SMA Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Supplier Device Package: TO-92-3 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
| 2N5308 TRE PBFREE | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 APP PBFREE | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 APM PBFREE | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 TRA PBFREE | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 TIN/LEAD | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 TRE TIN/LEAD | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 APP TIN/LEAD | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 APM TIN/LEAD | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| 2N5308 TRA TIN/LEAD | Central Semiconductor Corp |
Description: 300MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 40 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
|
1N5305 TR TIN/LEAD | Central Semiconductor Corp |
Description: DIODE CUR REG 100V 2.3MA 600MW Voltage - Limiting (Max): 1.85V Regulator Current (Max): 2.3mA Voltage - Anode - Cathode (Vak)(Max): 100V Power - Max: 600mW Supplier Device Package: DO-35 Applications: LED Driver Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
1N5305 TR PBFREE | Central Semiconductor Corp |
Description: DIODE CUR REG 100V 2.3MA 600MW Voltage - Limiting (Max): 1.85V Regulator Current (Max): 2.3mA Voltage - Anode - Cathode (Vak)(Max): 100V Power - Max: 600mW Supplier Device Package: DO-35 Applications: LED Driver Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2N6668 PBFREE | Central Semiconductor Corp |
Description: 10A 80V TH TRANSISTOR-BIPOLAR POPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Frequency - Transition: 20MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V |
товару немає в наявності |
Мінімальне замовлення: 550 шт В кошику од. на суму грн. | ||||||||||
| 1N4738A BK TIN/LEAD | Central Semiconductor Corp |
Description: 8.2V 1W TH DIODE-ZENER SINGLE: S Tolerance: ±5% Packaging: Box Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
товару немає в наявності |
Мінімальне замовлення: 16000 шт В кошику од. на суму грн. | |||||||||||
|
1N5252B BK TIN/LEAD | Central Semiconductor Corp |
Description: 24V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 33 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
товару немає в наявності |
Мінімальне замовлення: 22500 шт В кошику од. на суму грн. | ||||||||||
| CBCP68 TR TIN/LEAD | Central Semiconductor Corp |
Description: 20V 1A 2W SMD TRANSISTOR-SMALL S Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 65MHz Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
2N3505 PBFREE | Central Semiconductor Corp |
Description: 60V 600MA 400MW TH TRANSISTOR-SMPackaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
2N3504 PBFREE | Central Semiconductor Corp |
Description: 45V 600MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 400 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
2N3505 TIN/LEAD | Central Semiconductor Corp |
Description: 60V 600MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
2N3504 TIN/LEAD | Central Semiconductor Corp |
Description: 45V 600MA 400MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 400 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||
|
2N3501 TIN/LEAD | Central Semiconductor Corp |
Description: 150V 300MA 1W TH TRANSISTOR-SMAL Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 1 W |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
|
P6SMB110A BK PBFREE | Central Semiconductor Corp |
Description: 600W 94V SMD TRANSIENT VOLTAGE S Packaging: Box Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A Voltage - Reverse Standoff (Typ): 94V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 104.5V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 5500 шт В кошику од. на суму грн. | ||||||||||
|
P6SMB110CA TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 94V SMD TRANSIENT VOLTAGE S Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A Voltage - Reverse Standoff (Typ): 94V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 104.5V Voltage - Clamping (Max) @ Ipp: 152V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
|
2N2323 PBFREE | Central Semiconductor Corp |
Description: 1.6A 50V TH SCR Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 5 µA Supplier Device Package: TO-39 Current - On State (It (RMS)) (Max): 1.6 A Voltage - Off State: 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
2N2323 TIN/LEAD | Central Semiconductor Corp |
Description: 1.6A 50V TH SCR Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 5 µA Supplier Device Package: TO-39 Current - On State (It (RMS)) (Max): 1.6 A Voltage - Off State: 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
1N746A TR TIN/LEAD | Central Semiconductor Corp |
Description: 3.3V 500MW TH DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
|
1N746A BK TIN/LEAD | Central Semiconductor Corp |
Description: 3.3V 500MW TH DIODE-ZENER SINGLE Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Supplier Device Package: DO-35 Impedance (Max) (Zzt): 28 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Box |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
|
2N5815 PBFREE | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
|
2N5815 TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
| 2N5818 PBFREE | Central Semiconductor Corp |
Description: 40V 750MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 750mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 135MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||
|
2N5818 TRE PBFREE | Central Semiconductor Corp |
Description: 40V 750MA 625MW TH TRANSISTOR-SMPackaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 750mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 135MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| 1N4759A TR TIN/LEAD |
![]() |
Виробник: Central Semiconductor Corp
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| 1N4759A BK TIN/LEAD |
![]() |
Виробник: Central Semiconductor Corp
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: 62V 1W TH DIODE-ZENER SINGLE: ST
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.
| 1SMB10CA TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: 600W 10V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 10V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| 2N6297 PBFREE |
Виробник: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| 2N6297 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
Description: 4A 80V TH TRANSISTOR-BIPOLAR POW
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-66
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-213AA, TO-66-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 60 шт
В кошику
од. на суму грн.
| CRU24715-600 SL |
![]() |
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.80 грн |
| 30+ | 95.02 грн |
| 120+ | 81.19 грн |
| CRU24730-600 SL |
![]() |
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.58 грн |
| 30+ | 148.22 грн |
| 120+ | 123.91 грн |
| 510+ | 104.69 грн |
| 1020+ | 90.47 грн |
| 2N2369A TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Description: 15V 200MA 360MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1N755A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Description: 7.5V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| CBR2-L060M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 600V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.04 грн |
| CBR1-L040M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 400V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1435 шт
В кошику
од. на суму грн.
| CBR2-L010M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
од. на суму грн.
| CBR2-L040M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 400V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
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| CBR2-L080M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 800V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1375 шт
В кошику
од. на суму грн.
| CBR1-L080M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 800V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1.5A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 1365 шт
В кошику
од. на суму грн.
| CBR2-L100M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A B-M
Packaging: Bulk
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: B-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
Мінімальне замовлення: 1295 шт
В кошику
од. на суму грн.
| CBR1-L010M PBFREE |
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Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 100V 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 100V 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
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В кошику
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| CBR1-L020M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 200V 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 200V 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
товару немає в наявності
В кошику
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| CBR1-L100M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 1KV 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 1KV 1.5A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
товару немає в наявності
В кошику
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| CBR2-L020M PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 200V 2A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 200V 2A B-M
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
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В кошику
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| 3N255-M |
![]() |
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1PHASE 200V 2A B-M
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Description: BRIDGE RECT 1PHASE 200V 2A B-M
Mounting Type: Through Hole
Package / Case: 4-SIP
Packaging: Bulk
Supplier Device Package: B-M
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.14 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N754A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 6.8V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: 6.8V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N756A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 8.2V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Description: 8.2V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N4621 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Description: 3.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N4621 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
Description: 3.6V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 1700 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 7.5 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1N4622 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.9V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: 3.9V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 1N4622 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.9V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: 3.9V 250MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 1650 Ohms
Supplier Device Package: DO-35
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PN3563 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
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Мінімальне замовлення: 6000 шт
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| PN3563 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
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Мінімальне замовлення: 5000 шт
В кошику
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| PN3563 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
Description: 12V 50MA 625MW TH TRANSISTOR-SMA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Supplier Device Package: TO-92-3
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Мінімальне замовлення: 6000 шт
В кошику
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| 2N5308 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| 2N5308 APP PBFREE |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
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| 2N5308 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
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| 2N5308 TRA PBFREE |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 2N5308 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2N5308 TRE TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 2N5308 APP TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
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| 2N5308 APM TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
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| 2N5308 TRA TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Description: 300MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Мінімальне замовлення: 2000 шт
В кошику
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| 1N5305 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 2.3MA 600MW
Voltage - Limiting (Max): 1.85V
Regulator Current (Max): 2.3mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 600mW
Supplier Device Package: DO-35
Applications: LED Driver
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Description: DIODE CUR REG 100V 2.3MA 600MW
Voltage - Limiting (Max): 1.85V
Regulator Current (Max): 2.3mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 600mW
Supplier Device Package: DO-35
Applications: LED Driver
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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| 1N5305 TR PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE CUR REG 100V 2.3MA 600MW
Voltage - Limiting (Max): 1.85V
Regulator Current (Max): 2.3mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 600mW
Supplier Device Package: DO-35
Applications: LED Driver
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
Description: DIODE CUR REG 100V 2.3MA 600MW
Voltage - Limiting (Max): 1.85V
Regulator Current (Max): 2.3mA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 600mW
Supplier Device Package: DO-35
Applications: LED Driver
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
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| 2N6668 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: 10A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Description: 10A 80V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 10mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Frequency - Transition: 20MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
товару немає в наявності
Мінімальне замовлення: 550 шт
В кошику
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| 1N4738A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 8.2V 1W TH DIODE-ZENER SINGLE: S
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: 8.2V 1W TH DIODE-ZENER SINGLE: S
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
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Мінімальне замовлення: 16000 шт
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| 1N5252B BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: 24V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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Мінімальне замовлення: 22500 шт
В кошику
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| CBCP68 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 20V 1A 2W SMD TRANSISTOR-SMALL S
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2 W
Description: 20V 1A 2W SMD TRANSISTOR-SMALL S
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 65MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 2 W
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| 2N3505 PBFREE |
![]() |
Виробник: Central Semiconductor Corp
Description: 60V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: 60V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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| 2N3504 PBFREE |
Виробник: Central Semiconductor Corp
Description: 45V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
Description: 45V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
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Мінімальне замовлення: 2000 шт
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| 2N3505 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 60V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: 60V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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Мінімальне замовлення: 2000 шт
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| 2N3504 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 45V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
Description: 45V 600MA 400MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
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Мінімальне замовлення: 2000 шт
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| 2N3501 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 150V 300MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Description: 150V 300MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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Мінімальне замовлення: 500 шт
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| P6SMB110A BK PBFREE |
Виробник: Central Semiconductor Corp
Description: 600W 94V SMD TRANSIENT VOLTAGE S
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 94V SMD TRANSIENT VOLTAGE S
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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Мінімальне замовлення: 5500 шт
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| P6SMB110CA TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: 600W 94V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 94V SMD TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
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Мінімальне замовлення: 6000 шт
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| 2N2323 PBFREE |
Виробник: Central Semiconductor Corp
Description: 1.6A 50V TH SCR
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 50 V
Description: 1.6A 50V TH SCR
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 50 V
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| 2N2323 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 1.6A 50V TH SCR
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 50 V
Description: 1.6A 50V TH SCR
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 50 V
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| 1N746A TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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Мінімальне замовлення: 10000 шт
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| 1N746A BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
Description: 3.3V 500MW TH DIODE-ZENER SINGLE
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Box
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| 2N5815 PBFREE |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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Мінімальне замовлення: 5000 шт
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| 2N5815 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| 2N5818 PBFREE |
Виробник: Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| 2N5818 TRE PBFREE |
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Виробник: Central Semiconductor Corp
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 40V 750MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 750mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 135MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.










