Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78536) > Сторінка 1294 з 1309
Фото | Назва | Виробник | Інформація |
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DDTC143EUA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Quantity in set/package: 3000pcs. Current gain: 20 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSP75GTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.55Ω Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC |
на замовлення 1042 шт: термін постачання 21-30 дні (днів) |
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BSP75GQTA | DIODES INCORPORATED |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 675mΩ Kind of package: reel; tape Supply voltage: 0...5.5V DC Control voltage: 60V DC Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ70CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70V Breakdown voltage: 77.8...89.5V Max. forward impulse current: 5.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMN2501UFB4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.4A Pulsed drain current: 6A Power dissipation: 0.7W Case: X2-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 2nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN1019USN-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AZ23C5V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.1V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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AZ23C3V9-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 5261 шт: термін постачання 21-30 дні (днів) |
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DMP4013LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W Kind of package: 7 inch reel; tape Drain-source voltage: -40V Drain current: -8.3A On-state resistance: 13mΩ Type of transistor: P-MOSFET Case: PowerDI®3333-8 Power dissipation: 1W Polarisation: unipolar Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP4013LFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Case: PowerDI3333-8 Power dissipation: 2.1W Polarisation: unipolar Mounting: SMD Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP4013SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Case: PowerDI5060-8 Power dissipation: 3.4W Polarisation: unipolar Mounting: SMD Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -244A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMPH4013SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -40A On-state resistance: 23mΩ Type of transistor: P-MOSFET Case: TO252 Power dissipation: 3.7W Polarisation: unipolar Mounting: SMD Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP4013LFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Case: PowerDI3333-8 Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Mounting: SMD Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP4013LFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W Kind of package: 7 inch reel; tape Drain-source voltage: -40V Drain current: -11A On-state resistance: 18mΩ Type of transistor: P-MOSFET Case: PowerDI3333-8 Application: automotive industry Power dissipation: 2.1W Polarisation: unipolar Mounting: SMD Gate charge: 68.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMP4013SPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -9A On-state resistance: 23mΩ Type of transistor: P-MOSFET Case: PowerDI5060-8 Application: automotive industry Power dissipation: 3.4W Polarisation: unipolar Mounting: SMD Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -244A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMPH4013SK3Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252 Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -40A On-state resistance: 23mΩ Type of transistor: P-MOSFET Case: TO252 Application: automotive industry Power dissipation: 3.7W Polarisation: unipolar Mounting: SMD Gate charge: 67nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMPH4013SPSQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W Kind of package: 13 inch reel; tape Drain-source voltage: -40V Drain current: -49A On-state resistance: 23mΩ Type of transistor: P-MOSFET Case: PowerDI5060-8 Application: automotive industry Power dissipation: 3.3W Polarisation: unipolar Mounting: SMD Gate charge: 87nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -277A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5160T-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Current gain: 100...200 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 725mW Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5140U-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Current gain: 160...800 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5140V-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Current gain: 160...800 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 0.6W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5160FDB-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Current gain: 70...170 Collector current: 1A Pulsed collector current: 1.5A Type of transistor: PNP x2 Power dissipation: 2.47W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 65MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5160TQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Current gain: 100...200 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Application: automotive industry Power dissipation: 725mW Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5160U-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 400mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Current gain: 100...200 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 0.4W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DSS5160V-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Current gain: 100...200 Collector current: 1A Pulsed collector current: 2A Type of transistor: PNP Power dissipation: 0.6W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz Collector-emitter voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR10U100CT | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR® Mounting: THT Case: TO220AB Kind of package: tube Type of diode: rectifying Technology: SBR® Max. off-state voltage: 100V Max. load current: 10A Load current: 5A x2 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR10U100CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR® Mounting: THT Case: ITO220AB Kind of package: tube Type of diode: rectifying Technology: SBR® Max. off-state voltage: 100V Max. load current: 10A Load current: 5A x2 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AHC1G02W5-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOR Technology: CMOS Family: AHC Mounting: SMD Case: SOT25 Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
74AUP1G02FX4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOR Technology: CMOS Family: AUP Mounting: SMD Case: X2-DFN1409-6 Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74AUP1G02FZ4-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC Supply voltage: 0.8...3.6V DC Operating temperature: -40...150°C Type of integrated circuit: digital Number of channels: 1 Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOR Technology: CMOS Family: AUP Mounting: SMD Case: X2-DFN1410-6 Number of inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAZ15-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Zener current: 67mA Kind of package: reel; tape Case: SMA Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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AP7343Q-30W5-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1% Application: automotive industry Output voltage: 3V Output current: 0.3A Voltage drop: 0.32V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.7...5.25V Integrated circuit features: shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7343Q Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: SOT25 Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX51TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 25...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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BCX5116TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...250 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXTR2012Z-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 15mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 15...100V |
на замовлення 1945 шт: термін постачання 21-30 дні (днів) |
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BZT52C11T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
QSBT40-7-F | DIODES INCORPORATED |
![]() Description: Diode: TVS array; SOT363; Ch: 4; reel,tape Type of diode: TVS array Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Kind of package: reel; tape Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS16LP-7B | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 75V; 0.3A; X1-DFN1006-2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Semiconductor structure: single diode Case: X1-DFN1006-2 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MURS140-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Capacitance: 10pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MURS320-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAZ5V6-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 1W; 5.6V; 179mA; SMD; reel,tape; SMA; single diode Semiconductor structure: single diode Zener voltage: 5.6V Zener current: 179mA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SMA Tolerance: ±5% |
на замовлення 4347 шт: термін постачання 21-30 дні (днів) |
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74LVC126AT14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer Number of channels: 4 Mounting: SMD Case: TSSOP14 Kind of output: 3-state Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Technology: CMOS Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DDZ9715-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode Semiconductor structure: single diode Zener voltage: 36V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZT585B2V7T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 2.4V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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74HCU04S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: SO14 Operating temperature: -40...150°C Family: HC Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 2...6V DC Technology: CMOS Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74HCU04T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP14 Operating temperature: -40...150°C Family: HC Kind of output: push-pull Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 2...6V DC Technology: CMOS Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAS299-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.3A Case: SOT23 Kind of package: reel; tape Semiconductor structure: quadruple Reverse recovery time: 6ns Max. forward impulse current: 9A Max. forward voltage: 1.25V Features of semiconductor devices: small signal Max. load current: 0.9A |
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BZT52C15LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
на замовлення 2137 шт: термін постачання 21-30 дні (днів) |
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BZT52C15-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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BZT52C15T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
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BZT52C15TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
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FZT649TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 3W Case: SOT223 Pulsed collector current: 8A Current gain: 15...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150...240MHz |
на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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DF01M | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM Case: DFM Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 1.1V Max. off-state voltage: 100V Electrical mounting: THT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Load current: 1A |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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DMN6022SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 1.5W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45A |
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DMNH6022SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45A |
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DMNH6022SSDQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45A |
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FMMT723QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Quantity in set/package: 3000pcs. Current gain: 30...475 Collector current: 1A Pulsed collector current: 2.5A Type of transistor: PNP Application: automotive industry Power dissipation: 0.806W Polarisation: bipolar Frequency: 150...200MHz Collector-emitter voltage: 100V |
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DMP2045U-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 90mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3205 шт: термін постачання 21-30 дні (днів) |
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74LV32AT14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: push-pull Family: LV |
на замовлення 2479 шт: термін постачання 21-30 дні (днів) |
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RS1A-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Mounting: SMD Max. forward impulse current: 30A Max. off-state voltage: 50V Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Case: SMA |
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RS1AB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMB; reel,tape Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Case: SMB |
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В кошику од. на суму грн. |
DDTC143EUA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Current gain: 20
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BSP75GTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 1042 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.63 грн |
10+ | 70.16 грн |
19+ | 49.57 грн |
51+ | 47.28 грн |
500+ | 45.00 грн |
BSP75GQTA |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 675mΩ
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Operating temperature: -40...150°C
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 675mΩ
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
Operating temperature: -40...150°C
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SMBJ70CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 5.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...89.5V
Max. forward impulse current: 5.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN2501UFB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Pulsed drain current: 6A
Power dissipation: 0.7W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.4A
Pulsed drain current: 6A
Power dissipation: 0.7W
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN1019USN-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 8.8A
Pulsed drain current: 70A
Power dissipation: 0.83W
Case: SC59
Gate-source voltage: ±8V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 50.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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AZ23C5V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
на замовлення 660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.67 грн |
19+ | 20.44 грн |
100+ | 6.15 грн |
401+ | 2.27 грн |
AZ23C3V9-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 5261 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.43 грн |
39+ | 9.84 грн |
100+ | 5.30 грн |
334+ | 2.74 грн |
917+ | 2.59 грн |
DMP4013LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
Drain current: -8.3A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Power dissipation: 1W
Polarisation: unipolar
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.3A; Idm: 80A; 1W
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
Drain current: -8.3A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Case: PowerDI®3333-8
Power dissipation: 1W
Polarisation: unipolar
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 80A
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DMP4013LFG-13 |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
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DMP4013SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Power dissipation: 3.4W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -244A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Power dissipation: 3.4W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -244A
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DMPH4013SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -40A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: TO252
Power dissipation: 3.7W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -120A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -40A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: TO252
Power dissipation: 3.7W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -120A
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DMP4013LFGQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
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DMP4013LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -11A; Idm: -80A; 2.1W
Kind of package: 7 inch reel; tape
Drain-source voltage: -40V
Drain current: -11A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Case: PowerDI3333-8
Application: automotive industry
Power dissipation: 2.1W
Polarisation: unipolar
Mounting: SMD
Gate charge: 68.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -80A
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DMP4013SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Application: automotive industry
Power dissipation: 3.4W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -244A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -9A; Idm: -244A; 3.4W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -9A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Application: automotive industry
Power dissipation: 3.4W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -244A
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DMPH4013SK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -40A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: TO252
Application: automotive industry
Power dissipation: 3.7W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -120A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -40A; Idm: -120A; 3.7W; TO252
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -40A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: TO252
Application: automotive industry
Power dissipation: 3.7W
Polarisation: unipolar
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -120A
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DMPH4013SPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -49A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Application: automotive industry
Power dissipation: 3.3W
Polarisation: unipolar
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -277A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -49A; Idm: -277A; 3.3W
Kind of package: 13 inch reel; tape
Drain-source voltage: -40V
Drain current: -49A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Case: PowerDI5060-8
Application: automotive industry
Power dissipation: 3.3W
Polarisation: unipolar
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -277A
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DSS5160T-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 725mW
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 725mW
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
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DSS5140U-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 160...800
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 40V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 500mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 160...800
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 40V
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DSS5140V-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 160...800
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 40V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 160...800
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 40V
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DSS5160FDB-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Current gain: 70...170
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: PNP x2
Power dissipation: 2.47W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 65MHz
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6
Case: U-DFN2020-6
Mounting: SMD
Kind of package: reel; tape
Current gain: 70...170
Collector current: 1A
Pulsed collector current: 1.5A
Type of transistor: PNP x2
Power dissipation: 2.47W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 65MHz
Collector-emitter voltage: 60V
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DSS5160TQ-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 725mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 725mW
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
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DSS5160U-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 400mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.4W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 400mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.4W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
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DSS5160V-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...200
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: PNP
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Collector-emitter voltage: 60V
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SBR10U100CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Technology: SBR®
Max. off-state voltage: 100V
Max. load current: 10A
Load current: 5A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; TO220AB; SBR®
Mounting: THT
Case: TO220AB
Kind of package: tube
Type of diode: rectifying
Technology: SBR®
Max. off-state voltage: 100V
Max. load current: 10A
Load current: 5A x2
Semiconductor structure: common cathode; double
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SBR10U100CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Mounting: THT
Case: ITO220AB
Kind of package: tube
Type of diode: rectifying
Technology: SBR®
Max. off-state voltage: 100V
Max. load current: 10A
Load current: 5A x2
Semiconductor structure: common cathode; double
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5Ax2; tube; ITO220AB; SBR®
Mounting: THT
Case: ITO220AB
Kind of package: tube
Type of diode: rectifying
Technology: SBR®
Max. off-state voltage: 100V
Max. load current: 10A
Load current: 5A x2
Semiconductor structure: common cathode; double
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74AHC1G02W5-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AHC
Mounting: SMD
Case: SOT25
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SOT25; 2÷5.5VDC; -40÷150°C
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AHC
Mounting: SMD
Case: SOT25
Number of inputs: 2
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74AUP1G02FX4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1409-6
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1409-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1409-6
Number of inputs: 2
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74AUP1G02FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Number of inputs: 2
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; X2-DFN1410-6; 0.8÷3.6VDC
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...150°C
Type of integrated circuit: digital
Number of channels: 1
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOR
Technology: CMOS
Family: AUP
Mounting: SMD
Case: X2-DFN1410-6
Number of inputs: 2
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SMAZ15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; 67mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Zener current: 67mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.00 грн |
26+ | 15.10 грн |
50+ | 9.46 грн |
100+ | 7.78 грн |
171+ | 5.26 грн |
468+ | 4.96 грн |
1000+ | 4.88 грн |
2500+ | 4.80 грн |
AP7343Q-30W5-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Application: automotive industry
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.32V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343Q
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT25
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.3A; SOT25; SMD; ±1%
Application: automotive industry
Output voltage: 3V
Output current: 0.3A
Voltage drop: 0.32V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.7...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7343Q
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT25
Tolerance: ±1%
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BCX51TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.28 грн |
25+ | 15.56 грн |
BCX5116TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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ZXTR2012Z-13 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.015A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 15mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 15...100V
на замовлення 1945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.96 грн |
17+ | 23.26 грн |
77+ | 11.67 грн |
210+ | 11.06 грн |
BZT52C11T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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QSBT40-7-F |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT363; Ch: 4; reel,tape
Type of diode: TVS array
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Kind of package: reel; tape
Number of channels: 4
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BAS16LP-7B |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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MURS140-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Capacitance: 10pF
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MURS320-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMC
Kind of package: reel; tape
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SMAZ5V6-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; 179mA; SMD; reel,tape; SMA; single diode
Semiconductor structure: single diode
Zener voltage: 5.6V
Zener current: 179mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; 179mA; SMD; reel,tape; SMA; single diode
Semiconductor structure: single diode
Zener voltage: 5.6V
Zener current: 179mA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SMA
Tolerance: ±5%
на замовлення 4347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.35 грн |
28+ | 14.11 грн |
50+ | 10.91 грн |
100+ | 9.69 грн |
182+ | 5.03 грн |
499+ | 4.73 грн |
74LVC126AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...150°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 4; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -40...150°C
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DDZ9715-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 36V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; reel,tape; SOD123; single diode
Semiconductor structure: single diode
Zener voltage: 36V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Tolerance: ±5%
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BZT585B2V7T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.4V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.78 грн |
43+ | 9.08 грн |
56+ | 6.92 грн |
100+ | 4.20 грн |
500+ | 2.53 грн |
506+ | 1.82 грн |
1389+ | 1.72 грн |
74HCU04S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Family: HC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...6V DC
Technology: CMOS
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Operating temperature: -40...150°C
Family: HC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...6V DC
Technology: CMOS
Kind of integrated circuit: inverter
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74HCU04T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Family: HC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...6V DC
Technology: CMOS
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...150°C
Family: HC
Kind of output: push-pull
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 2...6V DC
Technology: CMOS
Kind of integrated circuit: inverter
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BAS299-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: quadruple
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. load current: 0.9A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: quadruple
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Features of semiconductor devices: small signal
Max. load current: 0.9A
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BZT52C15LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 15V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
на замовлення 2137 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.82 грн |
22+ | 17.39 грн |
28+ | 13.70 грн |
100+ | 8.98 грн |
170+ | 5.25 грн |
466+ | 4.96 грн |
BZT52C15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 130 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.86 грн |
58+ | 6.63 грн |
71+ | 5.41 грн |
129+ | 2.97 грн |
BZT52C15T-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
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BZT52C15TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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FZT649TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 8A
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 8A
Current gain: 15...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150...240MHz
на замовлення 988 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.42 грн |
11+ | 37.90 грн |
64+ | 14.41 грн |
175+ | 13.65 грн |
DF01M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM
Case: DFM
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 1A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1A; Ifsm: 50A; DFM
Case: DFM
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.1V
Max. off-state voltage: 100V
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Load current: 1A
на замовлення 238 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.92 грн |
50+ | 13.80 грн |
92+ | 9.99 грн |
DMN6022SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 45A; 1.5W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
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DMNH6022SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
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DMNH6022SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.9A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 45A
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FMMT723QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 30...475
Collector current: 1A
Pulsed collector current: 2.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.806W
Polarisation: bipolar
Frequency: 150...200MHz
Collector-emitter voltage: 100V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Current gain: 30...475
Collector current: 1A
Pulsed collector current: 2.5A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.806W
Polarisation: bipolar
Frequency: 150...200MHz
Collector-emitter voltage: 100V
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DMP2045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.25 грн |
35+ | 11.13 грн |
50+ | 8.62 грн |
100+ | 7.63 грн |
194+ | 4.58 грн |
533+ | 4.35 грн |
74LV32AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LV
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: push-pull
Family: LV
на замовлення 2479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.85 грн |
18+ | 21.51 грн |
23+ | 16.93 грн |
100+ | 8.69 грн |
113+ | 7.93 грн |
311+ | 7.47 грн |
RS1A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Mounting: SMD
Max. forward impulse current: 30A
Max. off-state voltage: 50V
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
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RS1AB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 150ns; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
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