Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78786) > Сторінка 1289 з 1314
Фото | Назва | Виробник | Інформація |
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AP4305UKTR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC Type of integrated circuit: PMIC Kind of integrated circuit: CV/CC controller Case: SOT26 Mounting: SMD Operating temperature: -40...105°C Application: SMPS Operating voltage: 2.5...18V DC Input voltage: -0.3...18V DC supply current: 0.5mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AP4305KTR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC Type of integrated circuit: PMIC Kind of integrated circuit: CV/CC controller Case: SOT26 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 2.5...18V DC Input voltage: -0.3...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMG302PU-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.45W Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMG302PU-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW Case: SOT23 Mounting: SMD Kind of package: 13 inch reel; tape Drain-source voltage: -25V Drain current: -140mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.45W Polarisation: unipolar Gate charge: 0.35nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN3731U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23 Drain-source voltage: 30V Drain current: 0.7A On-state resistance: 0.73Ω Type of transistor: N-MOSFET Power dissipation: 0.58W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 5.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 3A Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52C7V5-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2845 шт: термін постачання 21-30 дні (днів) |
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BZT52C7V5LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.25W; 7.5V; SMD; reel,tape; X1-DFN1006-2 Type of diode: Zener Power dissipation: 0.25W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: X1-DFN1006-2 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ZXTR2005Z-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 38mA Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±10% Number of channels: 1 Input voltage: 10...100V |
на замовлення 902 шт: термін постачання 21-30 дні (днів) |
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AP7350-12CF4-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2WLP4; SMD Mounting: SMD Operating temperature: -40...85°C Case: X2WLP4 Tolerance: ±2% Output voltage: 1.2V Output current: 0.15A Voltage drop: 0.9V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.25V Integrated circuit features: shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7350 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
AP7350-18CF4-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; X2WLP4; SMD Case: X2WLP4 Tolerance: ±2% Output voltage: 1.8V Output current: 0.15A Voltage drop: 0.6V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.25V Integrated circuit features: shutdown mode control input Kind of package: reel; tape Manufacturer series: AP7350 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BAV116HWF-7 | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
2N7002EQ-7-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 292mA Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
74AHC04S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of output: push-pull Kind of input: with Schmitt trigger Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AP63300QWU-7 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 0.8...32V DC Output current: 3A Case: TSOT26 Mounting: SMD Frequency: 450...550kHz Topology: buck Operating temperature: -40...125°C Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
AP22655WU-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape Kind of package: reel; tape Operating temperature: -40...85°C Case: TSOT26 Supply voltage: 3...5.5V DC On-state resistance: 85mΩ Output current: 3.1A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Kind of integrated circuit: USB switch Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DMP6050SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8 Case: SO8 Drain-source voltage: -60V Drain current: -3.9A On-state resistance: 55mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -32A Mounting: SMD |
на замовлення 1251 шт: термін постачання 21-30 дні (днів) |
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DMPH6050SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Case: TO252 Drain-source voltage: -60V Drain current: -6A On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 25nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Mounting: SMD |
на замовлення 2085 шт: термін постачання 21-30 дні (днів) |
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BAT54BRW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: double series x2 Max. forward impulse current: 0.6A Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 0.3A |
на замовлення 1858 шт: термін постачання 21-30 дні (днів) |
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D1213A-04V-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; SOT563; Ch: 4 Type of diode: TVS array Breakdown voltage: 6V Mounting: SMD Case: SOT563 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 1.2pF |
на замовлення 1915 шт: термін постачання 21-30 дні (днів) |
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D1213A-01SO-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; SOT23; Ch: 1 Type of diode: TVS array Breakdown voltage: 6V Mounting: SMD Case: SOT23 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 1 Capacitance: 1.2pF |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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ZSR500GTA | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.2A Case: SOT223 Mounting: SMD Manufacturer series: ZSR Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 7...20V |
на замовлення 875 шт: термін постачання 21-30 дні (днів) |
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BZT52HC11WF-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode Mounting: SMD Case: SOD123F Semiconductor structure: single diode Zener voltage: 11V Power dissipation: 0.83W Kind of package: reel; tape Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DSS5540X-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Collector-emitter voltage: 40V Current gain: 50...350 Collector current: 4A Type of transistor: PNP Power dissipation: 0.9W Polarisation: bipolar Quantity in set/package: 2500pcs. |
на замовлення 3141 шт: термін постачання 21-30 дні (днів) |
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AP7331-25WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: SOT25 Integrated circuit features: shutdown mode control input Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 2.5V Output current: 0.3A Voltage drop: 0.55V Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7331 Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
на замовлення 1253 шт: термін постачання 21-30 дні (днів) |
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DSS60601MZ4-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 1.2W Case: SOT223 Pulsed collector current: 12A Current gain: 50...360 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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AP22913W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SOT26 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
AP22913CN4-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side; USB switch Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: X1-WLB0909-4 Kind of package: reel; tape Supply voltage: 2.7...5.5V DC Active logical level: high |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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B0530WS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 235mW Capacitance: 58pF |
на замовлення 896 шт: термін постачання 21-30 дні (днів) |
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SBR1A40S3-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 20A Kind of package: reel; tape Technology: SBR® |
на замовлення 439 шт: термін постачання 21-30 дні (днів) |
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SMBJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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DMN2300U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.01A Pulsed drain current: 11A Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 1.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DMTH4008LPDWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.1A Pulsed drain current: 184A Power dissipation: 2.67W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ24AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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AP4320BK6TR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26 Type of integrated circuit: PMIC Kind of integrated circuit: CV/CC controller Case: SOT26 Mounting: SMD Output voltage: -300mV...36V |
на замовлення 1947 шт: термін постачання 21-30 дні (днів) |
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ABS210-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 35000 шт: термін постачання 21-30 дні (днів) |
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ZXT12N50DXTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.87W Case: MSOP8 Pulsed collector current: 10A Current gain: 50...900 Mounting: SMD Kind of package: reel; tape Frequency: 132MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DMP4025LSD-13 | DIODES INCORPORATED |
![]() Description: DMP4025LSD-13 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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DMC3026LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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AZ23C8V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
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DZ23C8V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MMDT2907V-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.15W Case: SOT563 Current gain: 50...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BSS138K-13 | DIODES INCORPORATED |
![]() Description: BSS138K-13 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138K-7 | DIODES INCORPORATED |
![]() Description: BSS138K-7 |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWK-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BSS138DWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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DMP6110SFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DMP6110SFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DMP6110SFDFQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DMP6110SFDFQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 17.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: U-DFN2020-6 |
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DMP10H400SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 1356 шт: термін постачання 21-30 дні (днів) |
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P4SMAJ70ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Leakage current: 1µA |
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ZXTP4003GTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 2W Case: SOT223 Pulsed collector current: 3A Current gain: 60...133 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape |
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BC807-16W-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 60...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Quantity in set/package: 3000pcs. Pulsed collector current: 1A |
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ULN2003V12T16-13 | DIODES INCORPORATED |
![]() Description: ULN2003V12T16-13 |
на замовлення 45000 шт: термін постачання 21-30 дні (днів) |
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GBJ2008-F | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 20A Max. forward impulse current: 0.24kA Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated Case: GBJ |
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MJD32CQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Application: automotive industry Current gain: 10...50 |
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MJD32C-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Case: DPAK; TO252 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Current gain: 10...50 Frequency: 3MHz |
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MJD32CUQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK; TO252 Pulsed collector current: 5A Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Application: automotive industry |
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DMP45H4D9HK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -450V Pulsed drain current: -12A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 13.7nC Drain current: -3A |
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AP4305UKTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Application: SMPS
Operating voltage: 2.5...18V DC
Input voltage: -0.3...18V
DC supply current: 0.5mA
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; SMPS; 0.5mA; 2.5÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Application: SMPS
Operating voltage: 2.5...18V DC
Input voltage: -0.3...18V
DC supply current: 0.5mA
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AP4305KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...18V DC
Input voltage: -0.3...18V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; SOT26; -0.3÷18V; 2.5÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 2.5...18V DC
Input voltage: -0.3...18V
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DMG302PU-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMG302PU-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -140mA; Idm: -0.5A; 450mW
Case: SOT23
Mounting: SMD
Kind of package: 13 inch reel; tape
Drain-source voltage: -25V
Drain current: -140mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.45W
Polarisation: unipolar
Gate charge: 0.35nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
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DMN3731U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Drain-source voltage: 30V
Drain current: 0.7A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.58W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 3A
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Drain-source voltage: 30V
Drain current: 0.7A
On-state resistance: 0.73Ω
Type of transistor: N-MOSFET
Power dissipation: 0.58W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 5.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 3A
Mounting: SMD
Case: SOT23
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BZT52C7V5-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.43 грн |
66+ | 5.82 грн |
83+ | 4.66 грн |
129+ | 2.99 грн |
708+ | 1.26 грн |
1947+ | 1.20 грн |
BZT52C7V5LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 7.5V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 7.5V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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ZXTR2005Z-7 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.038A; SOT89; SMD; ±10%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 38mA
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±10%
Number of channels: 1
Input voltage: 10...100V
на замовлення 902 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.77 грн |
12+ | 33.72 грн |
25+ | 27.43 грн |
77+ | 11.72 грн |
211+ | 11.11 грн |
AP7350-12CF4-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2WLP4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: X2WLP4
Tolerance: ±2%
Output voltage: 1.2V
Output current: 0.15A
Voltage drop: 0.9V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7350
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; X2WLP4; SMD
Mounting: SMD
Operating temperature: -40...85°C
Case: X2WLP4
Tolerance: ±2%
Output voltage: 1.2V
Output current: 0.15A
Voltage drop: 0.9V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7350
Kind of voltage regulator: fixed; LDO; linear
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AP7350-18CF4-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; X2WLP4; SMD
Case: X2WLP4
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.15A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7350
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; X2WLP4; SMD
Case: X2WLP4
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.15A
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.25V
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Manufacturer series: AP7350
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...85°C
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BAV116HWF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOD123F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
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2N7002EQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 292mA; Idm: 1A; 700mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 292mA
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
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74AHC04S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; SO14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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AP63300QWU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...32V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 450...550kHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 0.8÷32VDC; 3A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 0.8...32V DC
Output current: 3A
Case: TSOT26
Mounting: SMD
Frequency: 450...550kHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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AP22655WU-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: TSOT26
Supply voltage: 3...5.5V DC
On-state resistance: 85mΩ
Output current: 3.1A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Kind of integrated circuit: USB switch
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; 3.1A; Ch: 1; SMD; TSOT26; reel,tape
Kind of package: reel; tape
Operating temperature: -40...85°C
Case: TSOT26
Supply voltage: 3...5.5V DC
On-state resistance: 85mΩ
Output current: 3.1A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Kind of integrated circuit: USB switch
Mounting: SMD
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DMP6050SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Case: SO8
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -32A
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Case: SO8
Drain-source voltage: -60V
Drain current: -3.9A
On-state resistance: 55mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -32A
Mounting: SMD
на замовлення 1251 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.62 грн |
10+ | 43.53 грн |
38+ | 24.22 грн |
103+ | 22.91 грн |
500+ | 22.84 грн |
1000+ | 22.07 грн |
DMPH6050SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Case: TO252
Drain-source voltage: -60V
Drain current: -6A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Case: TO252
Drain-source voltage: -60V
Drain current: -6A
On-state resistance: 70mΩ
Type of transistor: P-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 25nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Mounting: SMD
на замовлення 2085 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.12 грн |
11+ | 35.71 грн |
45+ | 20.31 грн |
122+ | 19.24 грн |
1000+ | 18.47 грн |
BAT54BRW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 0.3A
на замовлення 1858 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.66 грн |
18+ | 21.46 грн |
72+ | 12.64 грн |
198+ | 11.95 грн |
D1213A-04V-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT563; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1.2pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT563; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1.2pF
на замовлення 1915 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.14 грн |
26+ | 15.17 грн |
38+ | 10.27 грн |
100+ | 9.04 грн |
124+ | 7.28 грн |
339+ | 6.90 грн |
D1213A-01SO-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT23; Ch: 1
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT23; Ch: 1
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
27+ | 14.25 грн |
54+ | 7.11 грн |
100+ | 4.73 грн |
262+ | 3.43 грн |
720+ | 3.23 грн |
ZSR500GTA |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
на замовлення 875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 122.97 грн |
10+ | 64.07 грн |
45+ | 20.15 грн |
123+ | 19.08 грн |
BZT52HC11WF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 11V
Power dissipation: 0.83W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Zener voltage: 11V
Power dissipation: 0.83W
Kind of package: reel; tape
Type of diode: Zener
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DSS5540X-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Collector-emitter voltage: 40V
Current gain: 50...350
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Quantity in set/package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Collector-emitter voltage: 40V
Current gain: 50...350
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Quantity in set/package: 2500pcs.
на замовлення 3141 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.91 грн |
14+ | 28.66 грн |
72+ | 12.64 грн |
196+ | 11.95 грн |
1000+ | 11.72 грн |
AP7331-25WG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.55V
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.55V
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
на замовлення 1253 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.69 грн |
12+ | 32.19 грн |
16+ | 24.68 грн |
100+ | 11.04 грн |
120+ | 7.51 грн |
328+ | 7.05 грн |
DSS60601MZ4-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 12A
Current gain: 50...360
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 12A
Current gain: 50...360
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100MHz
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AP22913W6-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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AP22913CN4-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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од. на суму грн.
B0530WS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 58pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 58pF
на замовлення 896 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.55 грн |
53+ | 7.36 грн |
100+ | 5.17 грн |
327+ | 2.74 грн |
SBR1A40S3-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Kind of package: reel; tape
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Kind of package: reel; tape
Technology: SBR®
на замовлення 439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
26+ | 14.79 грн |
50+ | 12.34 грн |
100+ | 11.19 грн |
131+ | 6.82 грн |
361+ | 6.44 грн |
SMBJ120CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.91 грн |
55+ | 7.43 грн |
100+ | 6.59 грн |
150+ | 6.13 грн |
405+ | 5.75 грн |
DMN2300U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMTH4008LPDWQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SMAJ24AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Leakage current: 5µA
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AP4320BK6TR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Output voltage: -300mV...36V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Case: SOT26
Mounting: SMD
Output voltage: -300mV...36V
на замовлення 1947 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.87 грн |
15+ | 27.05 грн |
25+ | 21.99 грн |
81+ | 11.19 грн |
222+ | 10.58 грн |
ABS210-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 35000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 6.85 грн |
ZXT12N50DXTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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DMP4025LSD-13 |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 25.83 грн |
DMC3026LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 16.26 грн |
AZ23C8V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.03 грн |
45+ | 8.66 грн |
100+ | 4.25 грн |
329+ | 2.74 грн |
905+ | 2.59 грн |
DZ23C8V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
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MMDT2907V-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
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BSS138K-13 |
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на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.57 грн |
BSS138K-7 |
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на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.57 грн |
BSS138DWQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 7.76 грн |
BSS138DWK-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.53 грн |
BSS138DWQ-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.76 грн |
DMP6110SFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP6110SFDFQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W
Drain-source voltage: -60V
Drain current: -3.4A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 17.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: U-DFN2020-6
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DMP10H400SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8A; 42W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 1356 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
16+ | 24.75 грн |
46+ | 19.74 грн |
125+ | 18.66 грн |
500+ | 18.01 грн |
P4SMAJ70ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 77.8÷86V; 3.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Leakage current: 1µA
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ZXTP4003GTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 3A
Current gain: 60...133
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
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BC807-16W-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT323
Current gain: 60...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
Pulsed collector current: 1A
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ULN2003V12T16-13 |
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на замовлення 45000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 10.89 грн |
GBJ2008-F |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 0.24kA
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Case: GBJ
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MJD32CQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Current gain: 10...50
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MJD32C-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Case: DPAK; TO252
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Current gain: 10...50
Frequency: 3MHz
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MJD32CUQ-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK; TO252
Pulsed collector current: 5A
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Application: automotive industry
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DMP45H4D9HK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -450V; -3A; Idm: -12A; 41W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -450V
Pulsed drain current: -12A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 13.7nC
Drain current: -3A
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