Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78751) > Сторінка 1299 з 1313
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DDC143TH-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 4.7kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Kind of transistor: BRT Base resistor: 4.7kΩ Mounting: SMD Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ22CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMAJ22CAQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMAJ22A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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SMAJ22AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
P4SMAJ22ADF-13 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2T45HK3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; transceiver; translator Technology: CMOS Supply voltage: 1.2...5.5V DC Mounting: SMD Case: X2-DFN1410-8 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
74LVC2T45RA3-7 | DIODES INCORPORATED |
![]() Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: 2bit; transceiver; translator Technology: CMOS Supply voltage: 1.2...5.5V DC Mounting: SMD Case: X2-DFN1210-8 Operating temperature: -40...150°C Kind of package: reel; tape Kind of output: 3-state Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DZ9F22S92-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BZT52C2V4TQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8.5% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP3165SVT-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W Mounting: SMD Case: TSOT26 Drain-source voltage: -30V Drain current: -2.2A On-state resistance: 0.2Ω Type of transistor: P-MOSFET x2 Power dissipation: 0.88W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -15A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C22W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 22V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AHCT1G04SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: AHC Kind of output: totem pole |
на замовлення 1509 шт: термін постачання 21-30 дні (днів) |
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BZX84C24-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 24V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 4002 шт: термін постачання 21-30 дні (днів) |
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BZX84C24Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 24V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZX84C24W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 24V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMP1045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 23.7nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -12V Drain current: -5.1A On-state resistance: 75mΩ Type of transistor: P-MOSFET |
на замовлення 2369 шт: термін постачання 21-30 дні (днів) |
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DMN1045UFR4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD Mounting: SMD Power dissipation: 1.26W Polarisation: unipolar Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Gate-source voltage: ±8V Case: X2-DFN1010-3 Drain-source voltage: 12V Drain current: 3.2A On-state resistance: 0.1Ω Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP2045UFY4-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Mounting: SMD Power dissipation: 1.49W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Case: X2-DFN2015-3 Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP1245UFCL-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W Mounting: SMD Power dissipation: 1.7W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 26.1nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -16.67A Case: X1-DFN1616-6 Drain-source voltage: -12V Drain current: -5.25A On-state resistance: 0.1Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AP7313-30SAG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD Manufacturer series: AP7313 Operating temperature: -40...85°C Output voltage: 3V Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...6V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Case: SOT23 Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SD101CW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 15mA Semiconductor structure: single diode Capacitance: 2.2pF Max. forward voltage: 0.9V Max. forward impulse current: 2A Reverse recovery time: 1ns Kind of package: reel; tape Power dissipation: 0.4W |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
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SD101CWS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 15mA Semiconductor structure: single diode Capacitance: 2.2pF Max. forward voltage: 0.9V Max. forward impulse current: 2A Reverse recovery time: 1ns Kind of package: reel; tape Power dissipation: 0.2W |
на замовлення 2462 шт: термін постачання 21-30 дні (днів) |
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FCX690BTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Power dissipation: 1W Polarisation: bipolar Quantity in set/package: 1000pcs. Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 45V Collector current: 2A |
на замовлення 1068 шт: термін постачання 21-30 дні (днів) |
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DXT690BP5-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Type of transistor: NPN Power dissipation: 3.2W Polarisation: bipolar Quantity in set/package: 5000pcs. Case: PowerDI®5 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 60...700 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXT690BP5Q-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5 Mounting: SMD Kind of package: reel; tape Pulsed collector current: 6A Type of transistor: NPN Application: automotive industry Power dissipation: 3.2W Polarisation: bipolar Quantity in set/package: 5000pcs. Case: PowerDI®5 Frequency: 150MHz Collector-emitter voltage: 45V Current gain: 60...700 Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FZT690BQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 3A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz Current gain: 50...500 Pulsed collector current: 6A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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B160-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 110pF |
на замовлення 2171 шт: термін постачання 21-30 дні (днів) |
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B130-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
на замовлення 592 шт: термін постачання 21-30 дні (днів) |
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B160B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 30A |
на замовлення 2135 шт: термін постачання 21-30 дні (днів) |
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B150-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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B130L-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Load current: 1A Max. forward impulse current: 25A |
на замовлення 4264 шт: термін постачання 21-30 дні (днів) |
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B150B-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMB Mounting: SMD Kind of package: reel; tape Capacitance: 110pF Max. forward voltage: 0.7V Load current: 1A Max. forward impulse current: 30A |
на замовлення 1978 шт: термін постачання 21-30 дні (днів) |
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B3100-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Capacitance: 200pF Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SMC |
на замовлення 2927 шт: термін постачання 21-30 дні (днів) |
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B330-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2742 шт: термін постачання 21-30 дні (днів) |
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DXTP03060BFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Frequency: 120MHz Collector-emitter voltage: 60V Current gain: 10...300 Collector current: 5.5A Type of transistor: PNP Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2000pcs. Mounting: SMD Case: PowerDI®3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DXTP03060CFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8 Frequency: 120MHz Collector-emitter voltage: 60V Current gain: 45...800 Collector current: 5.5A Type of transistor: PNP Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 2000pcs. Mounting: SMD Case: PowerDI®3333-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMSZ5256BS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 1660 шт: термін постачання 21-30 дні (днів) |
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PAM8006ATR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32 Type of integrated circuit: audio amplifier Frequency: 300kHz Output power: 15W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Mounting: SMD Number of channels: 2 Amplifier class: D Case: QFN32 Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PAM8012AZN | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9 Operating temperature: -40...125°C Integrated circuit features: low distortion THD; low noise; thermal protection Kind of package: reel; tape Amplifier class: D Voltage supply range: 2.5...5.5V DC Mounting: SMD Case: WCSP9 Frequency: 250Hz Type of integrated circuit: audio amplifier Number of channels: 1 Output power: 2W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT1000-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW Type of diode: Schottky rectifying Max. off-state voltage: 40V Load current: 1A Case: SOT23 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 0.5W Capacitance: 175pF Max. forward impulse current: 5.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RS2G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape Mounting: SMD Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS2GA-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape Mounting: SMD Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 150ns Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 0.4kV Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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S3MB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 40pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DGTD120T25S1PT | DIODES INCORPORATED |
![]() Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3 Turn-off time: 367ns Type of transistor: IGBT Pulsed collector current: 100A Collector current: 25A Power dissipation: 174W Gate-emitter voltage: ±20V Collector-emitter voltage: 1.2kV Kind of package: tube Case: TO247-3 Gate charge: 204nC Turn-on time: 110ns Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTD720MCTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2.45W Case: DFN3020B-8 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 190MHz |
на замовлення 2991 шт: термін постачання 21-30 дні (днів) |
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SBR6200CTL-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape Case: DPAK Max. off-state voltage: 200V Max. forward voltage: 0.85V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD |
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RDBF310-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 3A Max. forward impulse current: 100A Case: DBF Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.3V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||
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SMBJ150A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 150V Breakdown voltage: 167...192.5V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1675 шт: термін постачання 21-30 дні (днів) |
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FCX491ATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 300...900 Collector current: 1A Type of transistor: NPN Polarisation: bipolar Quantity in set/package: 1000pcs. |
на замовлення 669 шт: термін постачання 21-30 дні (днів) |
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FCX591ATA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89 Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Case: SOT89 Frequency: 150MHz Collector-emitter voltage: 40V Current gain: 30...800 Collector current: 1A Type of transistor: PNP Polarisation: bipolar Quantity in set/package: 1000pcs. |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
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ZVP3306A | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.16A Power dissipation: 0.625W Case: TO92 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 741 шт: термін постачання 21-30 дні (днів) |
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ZTL432BFFTA | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23F Operating temperature: -40...125°C Operating voltage: 2.5...20V Kind of package: reel; tape Maximum output current: 0.1A |
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В кошику од. на суму грн. | |||||||||||||||
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SMBJ120A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||
DDTD113ZC-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Quantity in set/package: 3000pcs. Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 56 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
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В кошику од. на суму грн. | |||||||||||||||
DMN30H14DLY-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89 On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 4nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1A Mounting: SMD Case: SOT89 Drain-source voltage: 300V Drain current: 0.16A |
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ZXMN6A08E6TA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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ZXMN6A08GQTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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ZXMN6A08GQTC | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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SMBJ200A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 200V Breakdown voltage: 224...247V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. |
DDC143TH-7 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Case: SOT563
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; 4.7kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 4.7kΩ
Mounting: SMD
Case: SOT563
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SMAJ22CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ22CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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SMAJ22A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.58 грн |
31+ | 12.69 грн |
100+ | 4.87 грн |
190+ | 4.73 грн |
522+ | 4.48 грн |
SMAJ22AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 24.4÷26.9V; 11.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
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P4SMAJ22ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC2T45HK3-7 |
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Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1410-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1410-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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74LVC2T45RA3-7 |
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Виробник: DIODES INCORPORATED
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; 2bit,transceiver,translator; CMOS; 1.2÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; transceiver; translator
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: X2-DFN1210-8
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
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DZ9F22S92-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
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BZT52C2V4TQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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DMP3165SVT-7 |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Mounting: SMD
Case: TSOT26
Drain-source voltage: -30V
Drain current: -2.2A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2.2A; Idm: -15A; 0.88W
Mounting: SMD
Case: TSOT26
Drain-source voltage: -30V
Drain current: -2.2A
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.88W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -15A
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BZX84C22W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 22V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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74AHCT1G04SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHC
Kind of output: totem pole
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; SMD; SOT353; 4.5÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: AHC
Kind of output: totem pole
на замовлення 1509 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
38+ | 10.09 грн |
52+ | 7.49 грн |
131+ | 2.92 грн |
411+ | 2.19 грн |
1130+ | 2.07 грн |
BZX84C24-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4002 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 9.88 грн |
60+ | 6.42 грн |
72+ | 5.31 грн |
120+ | 3.20 грн |
500+ | 2.00 грн |
755+ | 1.19 грн |
2074+ | 1.13 грн |
BZX84C24Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 24V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C24W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 24V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
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DMP1045UFY4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Mounting: SMD
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 23.7nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -12V
Drain current: -5.1A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
на замовлення 2369 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.76 грн |
18+ | 22.17 грн |
30+ | 18.81 грн |
96+ | 9.40 грн |
263+ | 8.87 грн |
DMN1045UFR4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Mounting: SMD
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3; ESD
Mounting: SMD
Power dissipation: 1.26W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: X2-DFN1010-3
Drain-source voltage: 12V
Drain current: 3.2A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
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DMP2045UFY4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W
Mounting: SMD
Power dissipation: 1.49W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 6.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -25A
Case: X2-DFN2015-3
Drain-source voltage: -20V
Drain current: -3.8A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
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DMP1245UFCL-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.25A; Idm: -16.67A; 1.7W
Mounting: SMD
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Gate charge: 26.1nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -16.67A
Case: X1-DFN1616-6
Drain-source voltage: -12V
Drain current: -5.25A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
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AP7313-30SAG-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Manufacturer series: AP7313
Operating temperature: -40...85°C
Output voltage: 3V
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: SOT23
Tolerance: ±2%
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од. на суму грн.
SD101CW-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.4W
на замовлення 675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.99 грн |
35+ | 10.93 грн |
50+ | 8.96 грн |
100+ | 8.12 грн |
228+ | 3.97 грн |
625+ | 3.75 грн |
SD101CWS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 15mA; 1ns; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 15mA
Semiconductor structure: single diode
Capacitance: 2.2pF
Max. forward voltage: 0.9V
Max. forward impulse current: 2A
Reverse recovery time: 1ns
Kind of package: reel; tape
Power dissipation: 0.2W
на замовлення 2462 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.76 грн |
32+ | 12.31 грн |
100+ | 8.18 грн |
159+ | 5.66 грн |
438+ | 5.35 грн |
FCX690BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 2A; 1W; SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 45V
Collector current: 2A
на замовлення 1068 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 43.63 грн |
14+ | 28.36 грн |
50+ | 22.48 грн |
76+ | 11.93 грн |
209+ | 11.24 грн |
DXT690BP5-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
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од. на суму грн.
DXT690BP5Q-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 6A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 3.2W
Polarisation: bipolar
Quantity in set/package: 5000pcs.
Case: PowerDI®5
Frequency: 150MHz
Collector-emitter voltage: 45V
Current gain: 60...700
Collector current: 3A
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од. на суму грн.
FZT690BQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 50...500
Pulsed collector current: 6A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Current gain: 50...500
Pulsed collector current: 6A
Application: automotive industry
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од. на суму грн.
B160-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 110pF
на замовлення 2171 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
54+ | 7.11 грн |
70+ | 5.49 грн |
100+ | 4.86 грн |
341+ | 2.63 грн |
936+ | 2.48 грн |
B130-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
на замовлення 592 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.35 грн |
50+ | 7.80 грн |
100+ | 4.84 грн |
341+ | 2.63 грн |
B160B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 30A
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.82 грн |
35+ | 11.01 грн |
100+ | 8.77 грн |
265+ | 3.38 грн |
728+ | 3.20 грн |
B150-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.35 грн |
49+ | 7.95 грн |
100+ | 6.18 грн |
B130L-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 25A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Load current: 1A
Max. forward impulse current: 25A
на замовлення 4264 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.29 грн |
32+ | 12.23 грн |
100+ | 9.48 грн |
140+ | 6.42 грн |
384+ | 6.04 грн |
B150B-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 110pF
Max. forward voltage: 0.7V
Load current: 1A
Max. forward impulse current: 30A
на замовлення 1978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
36+ | 10.70 грн |
100+ | 7.50 грн |
206+ | 4.36 грн |
564+ | 4.12 грн |
B3100-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Capacitance: 200pF
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Capacitance: 200pF
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMC
на замовлення 2927 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
20+ | 19.57 грн |
100+ | 15.60 грн |
102+ | 8.94 грн |
278+ | 8.41 грн |
B330-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2742 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 38.69 грн |
16+ | 24.62 грн |
100+ | 17.97 грн |
135+ | 6.65 грн |
371+ | 6.27 грн |
DXTP03060BFG-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 10...300
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 10...300
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
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од. на суму грн.
DXTP03060CFG-7 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 45...800
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; PowerDI®3333-8
Frequency: 120MHz
Collector-emitter voltage: 60V
Current gain: 45...800
Collector current: 5.5A
Type of transistor: PNP
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 2000pcs.
Mounting: SMD
Case: PowerDI®3333-8
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од. на суму грн.
MMSZ5256BS-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 1660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
56+ | 6.88 грн |
73+ | 5.27 грн |
96+ | 4.01 грн |
168+ | 2.29 грн |
532+ | 1.68 грн |
1463+ | 1.59 грн |
PAM8006ATR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Type of integrated circuit: audio amplifier
Frequency: 300kHz
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: QFN32
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Type of integrated circuit: audio amplifier
Frequency: 300kHz
Output power: 15W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: QFN32
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...5.5V DC
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PAM8012AZN |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 250Hz; Pout: 2W; Ch: 1; Amp.class: D; WCSP9
Operating temperature: -40...125°C
Integrated circuit features: low distortion THD; low noise; thermal protection
Kind of package: reel; tape
Amplifier class: D
Voltage supply range: 2.5...5.5V DC
Mounting: SMD
Case: WCSP9
Frequency: 250Hz
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 2W
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BAT1000-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1A
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 175pF
Max. forward impulse current: 5.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 1A; reel,tape; 500mW
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Load current: 1A
Case: SOT23
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 0.5W
Capacitance: 175pF
Max. forward impulse current: 5.5A
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RS2G-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMB
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMB; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMB
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RS2GA-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; 150ns; SMA; reel,tape
Mounting: SMD
Load current: 1.5A
Semiconductor structure: single diode
Reverse recovery time: 150ns
Kind of package: reel; tape
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Case: SMA
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S3MB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 40pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 40pF
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DGTD120T25S1PT |
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Виробник: DIODES INCORPORATED
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Turn-off time: 367ns
Type of transistor: IGBT
Pulsed collector current: 100A
Collector current: 25A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Gate charge: 204nC
Turn-on time: 110ns
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Turn-off time: 367ns
Type of transistor: IGBT
Pulsed collector current: 100A
Collector current: 25A
Power dissipation: 174W
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
Kind of package: tube
Case: TO247-3
Gate charge: 204nC
Turn-on time: 110ns
Mounting: THT
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ZXTD720MCTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 2.45W; DFN3020B-8
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2.45W
Case: DFN3020B-8
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 190MHz
на замовлення 2991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.21 грн |
10+ | 49.54 грн |
32+ | 28.36 грн |
87+ | 26.76 грн |
500+ | 26.30 грн |
1000+ | 25.84 грн |
SBR6200CTL-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SBR®; SMD; 200V; 3Ax2; reel,tape
Case: DPAK
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
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RDBF310-13 |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 100A; DBF
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 3A
Max. forward impulse current: 100A
Case: DBF
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.3V
Features of semiconductor devices: glass passivated
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SMBJ150A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 167÷192.5V; 2.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1675 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
27+ | 14.60 грн |
33+ | 11.62 грн |
100+ | 8.18 грн |
156+ | 5.81 грн |
428+ | 5.43 грн |
FCX491ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 300...900
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Quantity in set/package: 1000pcs.
на замовлення 669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
14+ | 27.37 грн |
50+ | 19.95 грн |
70+ | 12.84 грн |
192+ | 12.16 грн |
FCX591ATA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 1A; 1W; SOT89
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Case: SOT89
Frequency: 150MHz
Collector-emitter voltage: 40V
Current gain: 30...800
Collector current: 1A
Type of transistor: PNP
Polarisation: bipolar
Quantity in set/package: 1000pcs.
на замовлення 964 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
16+ | 24.39 грн |
50+ | 19.57 грн |
60+ | 15.14 грн |
163+ | 14.30 грн |
500+ | 13.76 грн |
ZVP3306A |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.16A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.16A; 0.625W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.16A
Power dissipation: 0.625W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 741 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 46.63 грн |
38+ | 24.16 грн |
103+ | 22.86 грн |
ZTL432BFFTA |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23F; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23F
Operating temperature: -40...125°C
Operating voltage: 2.5...20V
Kind of package: reel; tape
Maximum output current: 0.1A
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SMBJ120A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTD113ZC-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 56
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
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DMN30H14DLY-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1A
Mounting: SMD
Case: SOT89
Drain-source voltage: 300V
Drain current: 0.16A
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ZXMN6A08E6TA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 25.28 грн |
ZXMN6A08GQTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 29.23 грн |
ZXMN6A08GQTC |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4000+ | 29.23 грн |
SMBJ200A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 224÷247V; 1.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 224...247V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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од. на суму грн.