Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78530) > Сторінка 1299 з 1309
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SMCJ5.0A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SMCJ5.0AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 163A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1mA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BAT54BRW-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky rectifying Case: SOT363 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series x2 Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 1858 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
BAS40LP-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A Max. off-state voltage: 40V Load current: 0.8A Case: X1-DFN1006-2 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 1A Type of diode: Schottky rectifying Max. forward voltage: 1V Semiconductor structure: single diode |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
D1213A-04V-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; SOT563; Ch: 4 Type of diode: TVS array Breakdown voltage: 6V Mounting: SMD Case: SOT563 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 4 Capacitance: 1.2pF |
на замовлення 1915 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
D1213A-01SO-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; SOT23; Ch: 1 Type of diode: TVS array Breakdown voltage: 6V Mounting: SMD Case: SOT23 Max. off-state voltage: 3.3V Leakage current: 1µA Number of channels: 1 Capacitance: 1.2pF |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
BZX84B3V6-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZX84B3V6Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZT585B3V6T-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BZT585B3V6TQ-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD523 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
ZSR500GTA | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 0.2A Case: SOT223 Mounting: SMD Manufacturer series: ZSR Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 7...20V |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
BZT52HC11WF-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Zener voltage: 11V Power dissipation: 0.83W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBR20U50SLP-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape Max. off-state voltage: 50V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 57ns Kind of package: reel; tape Type of diode: rectifying Technology: SBR® Mounting: SMD Case: PowerDI®8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT20U50SLP-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 50V Max. off-state voltage: 50V Max. forward voltage: 0.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 144µA Kind of package: reel; tape Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Case: PowerDI®5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT25U60SLP-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 60V Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 25A Semiconductor structure: single diode Max. forward impulse current: 220A Leakage current: 170µA Kind of package: reel; tape Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Case: PowerDI®5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRT20U100SLP-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD Max. off-state voltage: 100V Max. forward voltage: 0.7V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 180A Leakage current: 90µA Kind of package: reel; tape Type of diode: Schottky rectifying Technology: Trench SBR® Mounting: SMD Case: PowerDI®5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
DSS5540X-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89 Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Collector-emitter voltage: 40V Current gain: 50...350 Collector current: 4A Type of transistor: PNP Power dissipation: 0.9W Polarisation: bipolar Quantity in set/package: 2500pcs. |
на замовлення 3141 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() +1 |
AP7331-25WG-7 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD Type of integrated circuit: voltage regulator Mounting: SMD Case: SOT25 Integrated circuit features: shutdown mode control input Kind of package: reel; tape Operating temperature: -40...85°C Output voltage: 2.5V Output current: 0.3A Voltage drop: 0.55V Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7331 Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
на замовлення 1253 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DMT10H010LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Pulsed drain current: 275A Power dissipation: 3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 53.7nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
AZ23C27-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Type of diode: Zener Semiconductor structure: common anode; double Zener voltage: 27V |
на замовлення 5798 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
AZ23C20-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Type of diode: Zener Semiconductor structure: common anode; double Zener voltage: 20V |
на замовлення 3184 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
AZ23C11-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode Case: SOT23 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.3W Type of diode: Zener Semiconductor structure: common anode; double Zener voltage: 11V |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
D1213A-02SR-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Ch: 2; reel,tape; ESD Case: SOT143 Mounting: SMD Number of channels: 2 Capacitance: 0.85pF Max. off-state voltage: 3.3V Max. forward impulse current: 5A Breakdown voltage: 6V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.4W |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DSS60601MZ4-13 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 1.2W Case: SOT223 Pulsed collector current: 12A Current gain: 50...360 Mounting: SMD Quantity in set/package: 2500pcs. Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
AP22913W6-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Mounting: SMD Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Case: SOT26 Supply voltage: 2.7...5.5V DC Output current: 2A Type of integrated circuit: power switch Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
AP22913CN4-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Mounting: SMD Kind of output: P-Channel Active logical level: high Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Case: X1-WLB0909-4 Supply voltage: 2.7...5.5V DC Output current: 2A Type of integrated circuit: power switch Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
AP22953CW12-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; USB switch; Ch: 1; SMD; W-WLB2013-12; reel,tape Mounting: SMD Operating temperature: -40...85°C Active logical level: low Kind of package: reel; tape Kind of integrated circuit: USB switch Case: W-WLB2013-12 Supply voltage: 3...5.9V DC On-state resistance: 50mΩ Type of integrated circuit: power switch Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
B0530WS-7-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 235mW Capacitance: 58pF |
на замовлення 896 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
SBR1A40S3-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 20A Kind of package: reel; tape Technology: SBR® |
на замовлення 439 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DMP10H4D2S-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.21A Pulsed drain current: -1A Power dissipation: 0.44W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 1.8nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
DMC4029SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 6.5/-9A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.024/0.045Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DSS4240V-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 600mW; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Current gain: 75...900 Collector current: 2A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 0.6W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DSS4240T-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 730mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Current gain: 150...350 Collector current: 2A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 0.73W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DSS4240Y-7 | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 40V; 2A; 625mW; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Current gain: 150...350 Collector current: 2A Pulsed collector current: 3A Type of transistor: NPN Power dissipation: 0.625W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 100...250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMBJ14A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2540 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
SMBJ14AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PD3Z284C18-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; PowerDI®323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Kind of package: reel; tape Case: PowerDI®323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
SMBJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 120V Breakdown voltage: 133...153V Max. forward impulse current: 3.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DMP1022UFDF-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 48.3nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP1022UFDEQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.3W Polarisation: unipolar Gate charge: 42.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -9A On-state resistance: 0.16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP1022UFDF-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 48.3nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -90A Drain-source voltage: -12V Drain current: -8.8A On-state resistance: 32mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
BZT52C47-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 47V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 47V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±6.5% Semiconductor structure: single diode |
на замовлення 2560 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
![]() |
DDZ9702S-7 | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Mounting: SMD Case: SOD323 Semiconductor structure: single diode Zener voltage: 15V Power dissipation: 0.2W Kind of package: reel; tape Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
![]() |
DMN2300U-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.01A Pulsed drain current: 11A Power dissipation: 0.55W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 1.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DMP6023LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.2A Pulsed drain current: -55A Power dissipation: 1W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMTH4008LPDWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.1A Pulsed drain current: 184A Power dissipation: 2.67W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMAJ24AQ-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
![]() |
AP4320BK6TR-G1 | DIODES INCORPORATED |
![]() Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26 Type of integrated circuit: PMIC Kind of integrated circuit: CV/CC controller Output voltage: -300mV...36V Case: SOT26 Mounting: SMD |
на замовлення 1947 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
ABS210-13 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
на замовлення 55000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
ZXT12N50DXTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.87W Case: MSOP8 Pulsed collector current: 10A Current gain: 50...900 Mounting: SMD Kind of package: reel; tape Frequency: 132MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DMP4025LSD-13 | DIODES INCORPORATED |
![]() Description: DMP4025LSD-13 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
DMC3026LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET Type of transistor: N/P-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
![]() |
AZ23C8V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double |
на замовлення 5980 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
DZ23C8V2-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23 Type of diode: Zener Power dissipation: 0.3W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MMDT2907V-7 | DIODES INCORPORATED |
![]() Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.15W Case: SOT563 Current gain: 50...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
1N5406G-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 1200 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BSS138K-13 | DIODES INCORPORATED |
![]() Description: BSS138K-13 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BSS138K-7 | DIODES INCORPORATED |
![]() Description: BSS138K-7 |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BSS138DWQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BSS138DWK-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2 Type of transistor: N-MOSFET x2 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
SMCJ5.0A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
SMCJ5.0AQ-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
BAT54BRW-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series x2
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 1858 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.66 грн |
18+ | 21.46 грн |
72+ | 12.49 грн |
198+ | 11.80 грн |
BAS40LP-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Max. off-state voltage: 40V
Load current: 0.8A
Case: X1-DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 40V; 0.8A
Max. off-state voltage: 40V
Load current: 0.8A
Case: X1-DFN1006-2
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 1A
Type of diode: Schottky rectifying
Max. forward voltage: 1V
Semiconductor structure: single diode
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.11 грн |
25+ | 15.86 грн |
100+ | 11.65 грн |
D1213A-04V-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT563; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1.2pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT563; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT563
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1.2pF
на замовлення 1915 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.14 грн |
26+ | 15.17 грн |
38+ | 10.27 грн |
100+ | 9.04 грн |
124+ | 7.28 грн |
339+ | 6.90 грн |
D1213A-01SO-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT23; Ch: 1
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; SOT23; Ch: 1
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3.3V
Leakage current: 1µA
Number of channels: 1
Capacitance: 1.2pF
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.06 грн |
27+ | 14.25 грн |
54+ | 7.11 грн |
100+ | 4.73 грн |
262+ | 3.43 грн |
720+ | 3.23 грн |
BZX84B3V6-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.
BZX84B3V6Q-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
BZT585B3V6T-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
BZT585B3V6TQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.6V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
ZSR500GTA |
![]() |
Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.2A; SOT223; SMD; ZSR
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT223
Mounting: SMD
Manufacturer series: ZSR
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 7...20V
на замовлення 890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 122.97 грн |
10+ | 64.07 грн |
45+ | 20.23 грн |
122+ | 19.16 грн |
BZT52HC11WF-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 11V
Power dissipation: 0.83W
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 11V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 11V
Power dissipation: 0.83W
товару немає в наявності
В кошику
од. на суму грн.
SBR20U50SLP-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Max. off-state voltage: 50V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 57ns
Kind of package: reel; tape
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Case: PowerDI®8
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 20A; 57ns; PowerDI®8; SBR®; reel,tape
Max. off-state voltage: 50V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 57ns
Kind of package: reel; tape
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Case: PowerDI®8
товару немає в наявності
В кошику
од. на суму грн.
SBRT20U50SLP-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 50V
Max. off-state voltage: 50V
Max. forward voltage: 0.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Leakage current: 144µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 50V
Max. off-state voltage: 50V
Max. forward voltage: 0.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Leakage current: 144µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
товару немає в наявності
В кошику
од. на суму грн.
SBRT25U60SLP-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 60V
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 25A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Leakage current: 170µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD; 60V
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 25A
Semiconductor structure: single diode
Max. forward impulse current: 220A
Leakage current: 170µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
товару немає в наявності
В кошику
од. на суму грн.
SBRT20U100SLP-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Leakage current: 90µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5060-8; Trench SBR®; SMD
Max. off-state voltage: 100V
Max. forward voltage: 0.7V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 180A
Leakage current: 90µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: Trench SBR®
Mounting: SMD
Case: PowerDI®5060-8
товару немає в наявності
В кошику
од. на суму грн.
DSS5540X-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Collector-emitter voltage: 40V
Current gain: 50...350
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Quantity in set/package: 2500pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 4A; 900mW; SOT89
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Collector-emitter voltage: 40V
Current gain: 50...350
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.9W
Polarisation: bipolar
Quantity in set/package: 2500pcs.
на замовлення 3141 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.91 грн |
14+ | 28.66 грн |
71+ | 12.64 грн |
195+ | 11.95 грн |
1000+ | 11.72 грн |
AP7331-25WG-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.55V
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Case: SOT25
Integrated circuit features: shutdown mode control input
Kind of package: reel; tape
Operating temperature: -40...85°C
Output voltage: 2.5V
Output current: 0.3A
Voltage drop: 0.55V
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7331
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
на замовлення 1253 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.69 грн |
12+ | 32.19 грн |
16+ | 24.68 грн |
100+ | 11.04 грн |
120+ | 7.51 грн |
328+ | 7.05 грн |
DMT10H010LK3-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 275A; 3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 275A
Power dissipation: 3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 53.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
AZ23C27-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 27V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 27V
на замовлення 5798 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.20 грн |
95+ | 4.06 грн |
147+ | 2.62 грн |
521+ | 1.76 грн |
1434+ | 1.66 грн |
AZ23C20-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 20V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 20V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 20V
на замовлення 3184 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.03 грн |
36+ | 10.81 грн |
50+ | 7.71 грн |
100+ | 6.51 грн |
335+ | 2.74 грн |
921+ | 2.59 грн |
AZ23C11-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 11V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; double,common anode
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Type of diode: Zener
Semiconductor structure: common anode; double
Zener voltage: 11V
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.04 грн |
91+ | 4.21 грн |
126+ | 3.05 грн |
143+ | 2.70 грн |
377+ | 2.44 грн |
1036+ | 2.30 грн |
D1213A-02SR-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Number of channels: 2
Capacitance: 0.85pF
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.4W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 5A; 0.4W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Number of channels: 2
Capacitance: 0.85pF
Max. off-state voltage: 3.3V
Max. forward impulse current: 5A
Breakdown voltage: 6V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.4W
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.41 грн |
23+ | 17.24 грн |
DSS60601MZ4-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 12A
Current gain: 50...360
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Pulsed collector current: 12A
Current gain: 50...360
Mounting: SMD
Quantity in set/package: 2500pcs.
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
AP22913W6-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: SOT26
Supply voltage: 2.7...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: SOT26
Supply voltage: 2.7...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
AP22913CN4-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: X1-WLB0909-4
Supply voltage: 2.7...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Mounting: SMD
Kind of output: P-Channel
Active logical level: high
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Case: X1-WLB0909-4
Supply voltage: 2.7...5.5V DC
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
AP22953CW12-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; Ch: 1; SMD; W-WLB2013-12; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Case: W-WLB2013-12
Supply voltage: 3...5.9V DC
On-state resistance: 50mΩ
Type of integrated circuit: power switch
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; USB switch; Ch: 1; SMD; W-WLB2013-12; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Active logical level: low
Kind of package: reel; tape
Kind of integrated circuit: USB switch
Case: W-WLB2013-12
Supply voltage: 3...5.9V DC
On-state resistance: 50mΩ
Type of integrated circuit: power switch
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
B0530WS-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 58pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 235mW
Capacitance: 58pF
на замовлення 896 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.55 грн |
53+ | 7.36 грн |
100+ | 5.17 грн |
327+ | 2.74 грн |
SBR1A40S3-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Kind of package: reel; tape
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SBR®; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 20A
Kind of package: reel; tape
Technology: SBR®
на замовлення 439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.81 грн |
26+ | 14.79 грн |
50+ | 12.34 грн |
100+ | 11.19 грн |
131+ | 6.82 грн |
361+ | 6.44 грн |
DMP10H4D2S-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Pulsed drain current: -1A
Power dissipation: 0.44W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 1.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.21A
Pulsed drain current: -1A
Power dissipation: 0.44W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 1.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMC4029SSD-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.024/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 6.5/-9A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.024/0.045Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DSS4240V-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 600mW; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 75...900
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.6W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 150MHz
товару немає в наявності
В кошику
од. на суму грн.
DSS4240T-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 150...350
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.73W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 730mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 150...350
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.73W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
DSS4240Y-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 625mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 150...350
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 100...250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 625mW; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Current gain: 150...350
Collector current: 2A
Pulsed collector current: 3A
Type of transistor: NPN
Power dissipation: 0.625W
Polarisation: bipolar
Quantity in set/package: 3000pcs.
Frequency: 100...250MHz
товару немає в наявності
В кошику
од. на суму грн.
SMBJ14A-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.93 грн |
24+ | 16.63 грн |
30+ | 13.03 грн |
100+ | 8.89 грн |
139+ | 6.51 грн |
382+ | 6.13 грн |
1000+ | 5.98 грн |
SMBJ14AQ-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.9V; 25.8A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
PD3Z284C18-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; PowerDI®323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Kind of package: reel; tape
Case: PowerDI®323
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
SMBJ120CA-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 133÷153V; 3.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 120V
Breakdown voltage: 133...153V
Max. forward impulse current: 3.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.91 грн |
55+ | 7.43 грн |
100+ | 6.59 грн |
150+ | 6.13 грн |
405+ | 5.75 грн |
DMP1022UFDF-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 48.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 48.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
товару немає в наявності
В кошику
од. на суму грн.
DMP1022UFDEQ-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 42.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 7 inch reel; tape
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 42.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
On-state resistance: 0.16Ω
товару немає в наявності
В кошику
од. на суму грн.
DMP1022UFDF-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 48.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 48.3nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -8.8A
On-state resistance: 32mΩ
товару немає в наявності
В кошику
од. на суму грн.
BZT52C47-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 47V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 47V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6.5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 47V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 47V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6.5%
Semiconductor structure: single diode
на замовлення 2560 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.25 грн |
71+ | 5.44 грн |
89+ | 4.35 грн |
128+ | 3.00 грн |
606+ | 1.49 грн |
1665+ | 1.41 грн |
DDZ9702S-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Mounting: SMD
Case: SOD323
Semiconductor structure: single diode
Zener voltage: 15V
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Mounting: SMD
Case: SOD323
Semiconductor structure: single diode
Zener voltage: 15V
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
DMN2300U-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.01A; Idm: 11A; 550mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.01A
Pulsed drain current: 11A
Power dissipation: 0.55W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMP6023LFG-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.2A; Idm: -55A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.2A
Pulsed drain current: -55A
Power dissipation: 1W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
DMTH4008LPDWQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.1A; Idm: 184A; 2.67W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.1A
Pulsed drain current: 184A
Power dissipation: 2.67W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
SMAJ24AQ-13-F |
![]() |
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7÷29.5V; 10.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
AP4320BK6TR-G1 |
![]() |
Виробник: DIODES INCORPORATED
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Output voltage: -300mV...36V
Case: SOT26
Mounting: SMD
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; CV/CC controller; -300mV÷36V; SOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: CV/CC controller
Output voltage: -300mV...36V
Case: SOT26
Mounting: SMD
на замовлення 1947 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.34 грн |
14+ | 28.97 грн |
16+ | 25.37 грн |
75+ | 12.18 грн |
205+ | 11.50 грн |
ABS210-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 55000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 6.93 грн |
ZXT12N50DXTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
товару немає в наявності
В кошику
од. на суму грн.
DMP4025LSD-13 |
![]() |
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 25.83 грн |
DMC3026LSD-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET
Type of transistor: N/P-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 16.34 грн |
AZ23C8V2-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
на замовлення 5980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.03 грн |
45+ | 8.66 грн |
100+ | 4.25 грн |
328+ | 2.74 грн |
900+ | 2.59 грн |
DZ23C8V2-7-F |
![]() |
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 8.2V; SMD; reel,tape; SOT23
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
товару немає в наявності
В кошику
од. на суму грн.
MMDT2907V-7 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SOT563
Current gain: 50...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
1N5406G-T |
![]() |
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 1200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1200+ | 7.35 грн |
BSS138K-13 |
![]() |
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.57 грн |
BSS138K-7 |
![]() |
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.57 грн |
BSS138DWQ-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 8.42 грн |
BSS138DWK-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2
Type of transistor: N-MOSFET x2
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.53 грн |