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ZXMN6A25KTC ZXMN6A25KTC Diodes Incorporated ZXMN6A25K.pdf Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
на замовлення 6119 шт:
термін постачання 21-31 дні (днів)
4+88.57 грн
10+62.24 грн
100+48.03 грн
500+35.47 грн
1000+32.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SBR0560S1Q-7 SBR0560S1Q-7 Diodes Incorporated SBR0560S1Q.pdf Description: DIODE SBR 60V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 468000 шт:
термін постачання 21-31 дні (днів)
3000+8.22 грн
6000+7.27 грн
9000+6.94 грн
15000+6.16 грн
21000+5.95 грн
30000+5.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR0560S1Q-7 SBR0560S1Q-7 Diodes Incorporated SBR0560S1Q.pdf Description: DIODE SBR 60V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 471449 шт:
термін постачання 21-31 дні (днів)
12+29.81 грн
17+19.35 грн
100+13.08 грн
500+9.52 грн
1000+8.61 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP3098LQ-7-52 DMP3098LQ-7-52 Diodes Incorporated DMP3098LQ.pdf Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
ZR431F01-7 ZR431F01-7 Diodes Incorporated ZR431_Oct2011.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Strip
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 55ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 50 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
товару немає в наявності
В кошику  од. на суму  грн.
ZR431LF01-7 ZR431LF01-7 Diodes Incorporated Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Strip
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 100 µA
Current - Output: 25 mA
Voltage - Output (Max): 10 V
товару немає в наявності
В кошику  од. на суму  грн.
ZR431F005-7 ZR431F005-7 Diodes Incorporated ZR431_Oct2011.pdf Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Strip
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 55ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 50 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
товару немає в наявності
В кошику  од. на суму  грн.
DMPH6050SPDQ-13 DMPH6050SPDQ-13 Diodes Incorporated DMPH6050SPDQ.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMPH6050SPDQ-13 DMPH6050SPDQ-13 Diodes Incorporated DMPH6050SPDQ.pdf Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)
3+135.40 грн
10+82.50 грн
100+53.89 грн
500+41.05 грн
1000+37.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMN3009SK3-13 DMN3009SK3-13 Diodes Incorporated DMN3009SK3.pdf Description: MOSFET N-CHANNEL 30V 80A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+17.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN3009SK3-13 DMN3009SK3-13 Diodes Incorporated DMN3009SK3.pdf Description: MOSFET N-CHANNEL 30V 80A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 3138 шт:
термін постачання 21-31 дні (днів)
5+73.24 грн
10+44.04 грн
100+28.66 грн
500+20.67 грн
1000+18.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH43M8LK3-13 DMTH43M8LK3-13 Diodes Incorporated DMTH43M8LK3.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2500+28.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH43M8LK3-13 DMTH43M8LK3-13 Diodes Incorporated DMTH43M8LK3.pdf Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
4+103.90 грн
10+63.55 грн
100+43.02 грн
500+32.56 грн
1000+29.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMP45H4D9HK3-13 DMP45H4D9HK3-13 Diodes Incorporated DMP45H4D9HK3.pdf Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
2500+26.14 грн
5000+23.31 грн
7500+22.35 грн
12500+20.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP45H4D9HK3-13 DMP45H4D9HK3-13 Diodes Incorporated DMP45H4D9HK3.pdf Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
на замовлення 111323 шт:
термін постачання 21-31 дні (днів)
4+101.34 грн
10+61.67 грн
100+40.89 грн
500+29.98 грн
1000+27.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMN6017SK3-13 DMN6017SK3-13 Diodes Incorporated DMN6017SK3.pdf Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+18.79 грн
5000+16.63 грн
7500+15.88 грн
12500+14.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN6017SK3-13 DMN6017SK3-13 Diodes Incorporated DMN6017SK3.pdf Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
на замовлення 13698 шт:
термін постачання 21-31 дні (днів)
5+74.94 грн
10+45.19 грн
100+29.46 грн
500+21.27 грн
1000+19.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMNH10H028SK3Q-13 DMNH10H028SK3Q-13 Diodes Incorporated DMNH10H028SK3Q.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+57.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMNH10H028SK3Q-13 DMNH10H028SK3Q-13 Diodes Incorporated DMNH10H028SK3Q.pdf Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4469 шт:
термін постачання 21-31 дні (днів)
3+136.26 грн
10+106.53 грн
100+75.61 грн
500+60.38 грн
1000+55.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMPH6023SK3Q-13 DMPH6023SK3Q-13 Diodes Incorporated DMPH6023SK3Q.pdf Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477500 шт:
термін постачання 21-31 дні (днів)
2500+40.71 грн
5000+36.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMPH6023SK3Q-13 DMPH6023SK3Q-13 Diodes Incorporated DMPH6023SK3Q.pdf Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477833 шт:
термін постачання 21-31 дні (днів)
3+146.48 грн
10+89.47 грн
100+60.15 грн
500+44.67 грн
1000+40.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMP3028LK3Q-13 DMP3028LK3Q-13 Diodes Incorporated DMP3028LK3Q.pdf Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207500 шт:
термін постачання 21-31 дні (днів)
2500+20.24 грн
5000+17.94 грн
7500+17.14 грн
12500+15.25 грн
17500+15.12 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP3028LK3Q-13 DMP3028LK3Q-13 Diodes Incorporated DMP3028LK3Q.pdf Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 209841 шт:
термін постачання 21-31 дні (днів)
5+80.90 грн
10+48.38 грн
100+31.56 грн
500+22.84 грн
1000+20.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMF4L5.0AQ-7 SMF4L5.0AQ-7 Diodes Incorporated SMF4L5.0CAQ-SMF4L200CAQ.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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SBL3045CT-LS Diodes Incorporated SBL3030CT%20-%20SBL3060CT.pdf Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
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MBR5200VPTR-E1 MBR5200VPTR-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPBTR-E1 MBR5200VPBTR-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VP-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPC-G1 Diodes Incorporated Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPC-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPTR-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPBTR-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VP-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPB-E1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPB-G1 Diodes Incorporated MBR5200.pdf Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS70T-7-G BAS70T-7-G Diodes Incorporated Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS116T-7-G Diodes Incorporated Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BAW156TQ-7-F-52 Diodes Incorporated BAW156TQ.pdf Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
3000+5.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PI7C9X2G606PRDNJAE PI7C9X2G606PRDNJAE Diodes Incorporated PI7C9X2G606PR.pdf Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)
1+1645.29 грн
10+1125.12 грн
25+1005.59 грн
126+853.72 грн
В кошику  од. на суму  грн.
AP22653AFDZ-7 AP22653AFDZ-7 Diodes Incorporated AP22652_53_52A_53A.pdf Description: LOAD SWITCH DFN2020
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
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AP22653AFDZ-7 AP22653AFDZ-7 Diodes Incorporated AP22652_53_52A_53A.pdf Description: LOAD SWITCH DFN2020
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
13+26.40 грн
19+17.47 грн
25+15.55 грн
100+12.60 грн
250+11.64 грн
500+11.07 грн
1000+10.42 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMP2170U-7 DMP2170U-7 Diodes Incorporated DMP2170U.pdf Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4641000 шт:
термін постачання 21-31 дні (днів)
3000+6.72 грн
6000+6.33 грн
9000+5.61 грн
30000+5.19 грн
75000+4.41 грн
150000+4.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP2170U-7 DMP2170U-7 Diodes Incorporated DMP2170U.pdf Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4642470 шт:
термін постачання 21-31 дні (днів)
12+30.66 грн
16+20.83 грн
100+10.49 грн
500+8.72 грн
1000+6.79 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMN10H700S-13 DMN10H700S-13 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
DMN10H700S-13 DMN10H700S-13 Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
на замовлення 9976 шт:
термін постачання 21-31 дні (днів)
10+36.62 грн
13+26.08 грн
100+14.74 грн
500+9.16 грн
1000+7.03 грн
2000+6.11 грн
5000+5.41 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3042L-13 DMN3042L-13 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2030000 шт:
термін постачання 21-31 дні (днів)
10000+6.61 грн
20000+5.85 грн
30000+5.58 грн
50000+4.96 грн
70000+4.85 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMN3042L-13 DMN3042L-13 Diodes Incorporated DMN3042L.pdf Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2046277 шт:
термін постачання 21-31 дні (днів)
10+35.77 грн
16+21.16 грн
100+13.35 грн
500+9.37 грн
1000+8.35 грн
2000+7.49 грн
5000+6.44 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WX5012D0125.000000 Diodes Incorporated Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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PI7C9X3G816GPBHFCE PI7C9X3G816GPBHFCE Diodes Incorporated PI7C9X3G816GP.pdf Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+4166.02 грн
10+3035.94 грн
25+2994.49 грн
В кошику  од. на суму  грн.
DML3012LDC-7A DML3012LDC-7A Diodes Incorporated DML3012LDC.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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DML3012LDC-7A DML3012LDC-7A Diodes Incorporated DML3012LDC.pdf Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
2+223.97 грн
10+140.23 грн
100+97.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DML1008LDS-7 DML1008LDS-7 Diodes Incorporated DML1008LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
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DML1008LDS-7 DML1008LDS-7 Diodes Incorporated DML1008LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)
8+47.69 грн
10+39.12 грн
100+27.24 грн
500+19.96 грн
1000+16.22 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP3007SCG-7 DMP3007SCG-7 Diodes Incorporated DMP3007SCG.pdf Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
2000+23.05 грн
4000+20.44 грн
6000+19.55 грн
10000+17.45 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP3007SCG-7 DMP3007SCG-7 Diodes Incorporated DMP3007SCG.pdf Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18453 шт:
термін постачання 21-31 дні (днів)
4+89.42 грн
10+53.88 грн
100+35.49 грн
500+25.88 грн
1000+23.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMP6A17GQTA-52 ZXMP6A17GQTA-52 Diodes Incorporated ZXMP6A17GQ.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
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В кошику  од. на суму  грн.
ZXMP6A17GTA-52 Diodes Incorporated ZXMP6A17G.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
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DMN6068SEQ-13 DMN6068SEQ-13 Diodes Incorporated ds32033.pdf Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 638497 шт:
термін постачання 21-31 дні (днів)
8+48.54 грн
10+40.43 грн
100+28.02 грн
500+21.97 грн
1000+18.70 грн
2000+16.65 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
D2V5L1BS2LP3-7 D2V5L1BS2LP3-7 Diodes Incorporated D2V5L1BS2LP3.pdf Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
на замовлення 5945 шт:
термін постачання 21-31 дні (днів)
20+17.03 грн
30+11.07 грн
100+5.08 грн
500+4.55 грн
1000+4.33 грн
2000+4.29 грн
5000+4.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
GDZ15LP3-7 GDZ15LP3-7 Diodes Incorporated GDZxVxLP3.pdf Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 380000 шт:
термін постачання 21-31 дні (днів)
10000+2.69 грн
20000+2.28 грн
30000+2.26 грн
50000+2.04 грн
70000+1.87 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ZXMN6A25KTC ZXMN6A25K.pdf
ZXMN6A25KTC
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.11W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
на замовлення 6119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+88.57 грн
10+62.24 грн
100+48.03 грн
500+35.47 грн
1000+32.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SBR0560S1Q-7 SBR0560S1Q.pdf
SBR0560S1Q-7
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 468000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+8.22 грн
6000+7.27 грн
9000+6.94 грн
15000+6.16 грн
21000+5.95 грн
30000+5.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SBR0560S1Q-7 SBR0560S1Q.pdf
SBR0560S1Q-7
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 500MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 471449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.81 грн
17+19.35 грн
100+13.08 грн
500+9.52 грн
1000+8.61 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMP3098LQ-7-52 DMP3098LQ.pdf
DMP3098LQ-7-52
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.08W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1008 pF @ 25 V
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ZR431F01-7 ZR431_Oct2011.pdf
ZR431F01-7
Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Strip
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 55ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 50 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
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ZR431LF01-7
ZR431LF01-7
Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Strip
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Part Status: Obsolete
Current - Cathode: 100 µA
Current - Output: 25 mA
Voltage - Output (Max): 10 V
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ZR431F005-7 ZR431_Oct2011.pdf
ZR431F005-7
Виробник: Diodes Incorporated
Description: IC VREF SHUNT ADJ 0.5% SOT23
Packaging: Strip
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 55ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 50 µA
Current - Output: 100 mA
Voltage - Output (Max): 20 V
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DMPH6050SPDQ-13 DMPH6050SPDQ.pdf
DMPH6050SPDQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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DMPH6050SPDQ-13 DMPH6050SPDQ.pdf
DMPH6050SPDQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 26A POWERDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.40 грн
10+82.50 грн
100+53.89 грн
500+41.05 грн
1000+37.53 грн
Мінімальне замовлення: 3
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DMN3009SK3-13 DMN3009SK3.pdf
DMN3009SK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 80A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+17.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN3009SK3-13 DMN3009SK3.pdf
DMN3009SK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 30V 80A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 3138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.24 грн
10+44.04 грн
100+28.66 грн
500+20.67 грн
1000+18.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH43M8LK3-13 DMTH43M8LK3.pdf
DMTH43M8LK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH43M8LK3-13 DMTH43M8LK3.pdf
DMTH43M8LK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.90 грн
10+63.55 грн
100+43.02 грн
500+32.56 грн
1000+29.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
DMP45H4D9HK3-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
на замовлення 110000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+26.14 грн
5000+23.31 грн
7500+22.35 грн
12500+20.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP45H4D9HK3-13 DMP45H4D9HK3.pdf
DMP45H4D9HK3-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 450V 4.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 25 V
на замовлення 111323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.34 грн
10+61.67 грн
100+40.89 грн
500+29.98 грн
1000+27.28 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMN6017SK3-13 DMN6017SK3.pdf
DMN6017SK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+18.79 грн
5000+16.63 грн
7500+15.88 грн
12500+14.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMN6017SK3-13 DMN6017SK3.pdf
DMN6017SK3-13
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 60V 43A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2711 pF @ 15 V
на замовлення 13698 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.94 грн
10+45.19 грн
100+29.46 грн
500+21.27 грн
1000+19.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMNH10H028SK3Q-13 DMNH10H028SK3Q.pdf
DMNH10H028SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMNH10H028SK3Q-13 DMNH10H028SK3Q.pdf
DMNH10H028SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4469 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.26 грн
10+106.53 грн
100+75.61 грн
500+60.38 грн
1000+55.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMPH6023SK3Q-13 DMPH6023SK3Q.pdf
DMPH6023SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+40.71 грн
5000+36.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMPH6023SK3Q-13 DMPH6023SK3Q.pdf
DMPH6023SK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.48 грн
10+89.47 грн
100+60.15 грн
500+44.67 грн
1000+40.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DMP3028LK3Q-13 DMP3028LK3Q.pdf
DMP3028LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+20.24 грн
5000+17.94 грн
7500+17.14 грн
12500+15.25 грн
17500+15.12 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMP3028LK3Q-13 DMP3028LK3Q.pdf
DMP3028LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 209841 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.90 грн
10+48.38 грн
100+31.56 грн
500+22.84 грн
1000+20.66 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMF4L5.0AQ-7 SMF4L5.0CAQ-SMF4L200CAQ.pdf
SMF4L5.0AQ-7
Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SBL3045CT-LS SBL3030CT%20-%20SBL3060CT.pdf
Виробник: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPTR-E1 MBR5200.pdf
MBR5200VPTR-E1
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPBTR-E1 MBR5200.pdf
MBR5200VPBTR-E1
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VP-E1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPC-G1
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPC-E1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPTR-G1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
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MBR5200VPBTR-G1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
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MBR5200VP-G1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
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MBR5200VPB-E1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR5200VPB-G1 MBR5200.pdf
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
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BAS70T-7-G
BAS70T-7-G
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
товару немає в наявності
В кошику  од. на суму  грн.
BAS116T-7-G
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BAW156TQ-7-F-52 BAW156TQ.pdf
Виробник: Diodes Incorporated
Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PI7C9X2G606PRDNJAE PI7C9X2G606PR.pdf
PI7C9X2G606PRDNJAE
Виробник: Diodes Incorporated
Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1645.29 грн
10+1125.12 грн
25+1005.59 грн
126+853.72 грн
В кошику  од. на суму  грн.
AP22653AFDZ-7 AP22652_53_52A_53A.pdf
AP22653AFDZ-7
Виробник: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
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AP22653AFDZ-7 AP22652_53_52A_53A.pdf
AP22653AFDZ-7
Виробник: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.40 грн
19+17.47 грн
25+15.55 грн
100+12.60 грн
250+11.64 грн
500+11.07 грн
1000+10.42 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
DMP2170U-7 DMP2170U.pdf
DMP2170U-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4641000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.72 грн
6000+6.33 грн
9000+5.61 грн
30000+5.19 грн
75000+4.41 грн
150000+4.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMP2170U-7 DMP2170U.pdf
DMP2170U-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4642470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.66 грн
16+20.83 грн
100+10.49 грн
500+8.72 грн
1000+6.79 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
DMN10H700S-13 DMN10H700S.pdf
DMN10H700S-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
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DMN10H700S-13 DMN10H700S.pdf
DMN10H700S-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
на замовлення 9976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.62 грн
13+26.08 грн
100+14.74 грн
500+9.16 грн
1000+7.03 грн
2000+6.11 грн
5000+5.41 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3042L-13 DMN3042L.pdf
DMN3042L-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2030000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.61 грн
20000+5.85 грн
30000+5.58 грн
50000+4.96 грн
70000+4.85 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
DMN3042L-13 DMN3042L.pdf
DMN3042L-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2046277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.77 грн
16+21.16 грн
100+13.35 грн
500+9.37 грн
1000+8.35 грн
2000+7.49 грн
5000+6.44 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
WX5012D0125.000000
Виробник: Diodes Incorporated
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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PI7C9X3G816GPBHFCE PI7C9X3G816GP.pdf
PI7C9X3G816GPBHFCE
Виробник: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4166.02 грн
10+3035.94 грн
25+2994.49 грн
В кошику  од. на суму  грн.
DML3012LDC-7A DML3012LDC.pdf
DML3012LDC-7A
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
DML3012LDC-7A DML3012LDC.pdf
DML3012LDC-7A
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.97 грн
10+140.23 грн
100+97.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DML1008LDS-7 DML1008LDS.pdf
DML1008LDS-7
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
DML1008LDS-7 DML1008LDS.pdf
DML1008LDS-7
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.69 грн
10+39.12 грн
100+27.24 грн
500+19.96 грн
1000+16.22 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DMP3007SCG-7 DMP3007SCG.pdf
DMP3007SCG-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+23.05 грн
4000+20.44 грн
6000+19.55 грн
10000+17.45 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
DMP3007SCG-7 DMP3007SCG.pdf
DMP3007SCG-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.42 грн
10+53.88 грн
100+35.49 грн
500+25.88 грн
1000+23.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMP6A17GQTA-52 ZXMP6A17GQ.pdf
ZXMP6A17GQTA-52
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
ZXMP6A17GTA-52 ZXMP6A17G.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
DMN6068SEQ-13 ds32033.pdf
DMN6068SEQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 638497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+48.54 грн
10+40.43 грн
100+28.02 грн
500+21.97 грн
1000+18.70 грн
2000+16.65 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
D2V5L1BS2LP3-7 D2V5L1BS2LP3.pdf
D2V5L1BS2LP3-7
Виробник: Diodes Incorporated
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
на замовлення 5945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.03 грн
30+11.07 грн
100+5.08 грн
500+4.55 грн
1000+4.33 грн
2000+4.29 грн
5000+4.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
GDZ15LP3-7 GDZxVxLP3.pdf
GDZ15LP3-7
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 380000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.69 грн
20000+2.28 грн
30000+2.26 грн
50000+2.04 грн
70000+1.87 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
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