Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74619) > Сторінка 537 з 1244
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DMNH10H028SK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMNH10H028SK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4469 шт: термін постачання 21-31 дні (днів) |
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DMPH6023SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CHANNEL 60V 35A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Power Dissipation (Max): 3.2W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 477500 шт: термін постачання 21-31 дні (днів) |
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DMPH6023SK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CHANNEL 60V 35A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Power Dissipation (Max): 3.2W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 477833 шт: термін постачання 21-31 дні (днів) |
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DMP3028LK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CHANNEL 30V 27A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 207500 шт: термін постачання 21-31 дні (днів) |
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DMP3028LK3Q-13 | Diodes Incorporated |
Description: MOSFET P-CHANNEL 30V 27A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 209841 шт: термін постачання 21-31 дні (днів) |
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SMF4L5.0AQ-7 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPPackaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-219AA Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
товару немає в наявності |
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| SBL3045CT-LS | Diodes Incorporated |
Description: SCHOTTKY RECTIFIERPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MBR5200VPTR-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO201Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR5200VPBTR-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO201Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MBR5200VP-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPC-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPC-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPBTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VP-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPB-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR5200VPB-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 5A DO27Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS70T-7-G | Diodes Incorporated |
Description: DIODE SCHOTTKY 70V 70MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: SOT-523 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 240 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAS116T-7-G | Diodes Incorporated |
Description: DIODE GEN PURP 85V SOT523 Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAW156TQ-7-F-52 | Diodes Incorporated |
Description: Switching Standard Diode SOT523Packaging: Bulk Package / Case: SOT-523 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 215mA Supplier Device Package: SOT-523 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 85 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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PI7C9X2G606PRDNJAE | Diodes Incorporated |
Description: IC INTFACE SPECIALIZED 196LBGAPackaging: Tray Package / Case: 196-LBGA Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 6-Port/6-Lane Supplier Device Package: 196-LBGA (15x15) Part Status: Active |
на замовлення 3809 шт: термін постачання 21-31 дні (днів) |
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AP22653AFDZ-7 | Diodes Incorporated |
Description: LOAD SWITCH DFN2020Packaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled, Status Flag Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 65mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: W-DFN2020-6 (Type A1) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AP22653AFDZ-7 | Diodes Incorporated |
Description: LOAD SWITCH DFN2020Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled, Status Flag Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 65mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: W-DFN2020-6 (Type A1) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO Part Status: Active |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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DMP2170U-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.1A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4641000 шт: термін постачання 21-31 дні (днів) |
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DMP2170U-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.1A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4642470 шт: термін постачання 21-31 дні (днів) |
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DMN10H700S-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN10H700S-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V |
на замовлення 9976 шт: термін постачання 21-31 дні (днів) |
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DMN3042L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 2030000 шт: термін постачання 21-31 дні (днів) |
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DMN3042L-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.8A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V |
на замовлення 2046277 шт: термін постачання 21-31 дні (днів) |
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| WX5012D0125.000000 | Diodes Incorporated |
Description: XO OSCILLATOR SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PI7C9X3G816GPBHFCE | Diodes Incorporated |
Description: PACKET SWITCH H-FCBGA190190-324Packaging: Tray Package / Case: 324-BFBGA, FCBGA Mounting Type: Surface Mount Interface: I2C, JTAG, PCI Express, Serial, SMBus Voltage - Supply: 0.9V ~ 0.99V Applications: Packet Switch, 8-Port/16-Lane Supplier Device Package: 324-HFCBGA (19x19) Part Status: Active |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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DML3012LDC-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1Packaging: Tape & Reel (TR) Features: Power Good, Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 4.8mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-12 (Type B) Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DML3012LDC-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1Packaging: Cut Tape (CT) Features: Power Good, Slew Rate Controlled Package / Case: 12-VFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 4.8mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-12 (Type B) Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 122 шт: термін постачання 21-31 дні (днів) |
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DML1008LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Voltage - Load: 3.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DML1008LDS-7 | Diodes Incorporated |
Description: IC PWR SWITCH N-CHAN 1:1 8VDFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Voltage - Load: 3.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) Part Status: Active |
на замовлення 2830 шт: термін постачання 21-31 дні (днів) |
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DMP3007SCG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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DMP3007SCG-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3333-8 (Type B) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V |
на замовлення 18453 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17GQTA-52 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ZXMP6A17GTA-52 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN6068SEQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V SOT223 T&RPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 638497 шт: термін постачання 21-31 дні (днів) |
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D2V5L1BS2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 2.5VWM 6V X3DFN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 2.5V (Max) Supplier Device Package: X3-DFN0603-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 2.6V Voltage - Clamping (Max) @ Ipp: 6V (Typ) Power - Peak Pulse: 90W Power Line Protection: No Part Status: Active |
на замовлення 5945 шт: термін постачання 21-31 дні (днів) |
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GDZ15LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 380000 шт: термін постачання 21-31 дні (днів) |
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GDZ15LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 15V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 390777 шт: термін постачання 21-31 дні (днів) |
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GDZ6V2LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5.4% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3430000 шт: термін постачання 21-31 дні (днів) |
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GDZ6V2LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.2V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5.4% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3439270 шт: термін постачання 21-31 дні (днів) |
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GDZ24LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 24V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 240000 шт: термін постачання 21-31 дні (днів) |
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GDZ24LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 24V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 259218 шт: термін постачання 21-31 дні (днів) |
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GDZ7V5LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5.23% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
на замовлення 700000 шт: термін постачання 21-31 дні (днів) |
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GDZ7V5LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 7.5V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5.23% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
на замовлення 709185 шт: термін постачання 21-31 дні (днів) |
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GDZ11LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 270000 шт: термін постачання 21-31 дні (днів) |
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GDZ11LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 11V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 296213 шт: термін постачання 21-31 дні (днів) |
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GDZ2V7LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 2.7V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 20 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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GDZ2V7LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 2.7V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 20 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 78055 шт: термін постачання 21-31 дні (днів) |
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GDZ4V3LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 4.3V 250MW 2DFNPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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GDZ4V3LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 4.3V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 214140 шт: термін постачання 21-31 дні (днів) |
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GDZ6V8LP3-7 | Diodes Incorporated |
Description: DIODE ZENER 6.8V 250MW 2DFNPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Supplier Device Package: X3-DFN0603-2 Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
на замовлення 1147038 шт: термін постачання 21-31 дні (днів) |
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SBR8U60P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SBR8U60P5Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15390 шт: термін постачання 21-31 дні (днів) |
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SBR8U60P5Q-13D | Diodes Incorporated |
Description: DIODE SBR 60V 8A POWERDI5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 8A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A Current - Reverse Leakage @ Vr: 330 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| DMNH10H028SK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 55A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 56.93 грн |
| DMNH10H028SK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 55A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.36 грн |
| 10+ | 105.05 грн |
| 100+ | 74.56 грн |
| 500+ | 59.54 грн |
| 1000+ | 54.94 грн |
| DMPH6023SK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 40.15 грн |
| 5000+ | 36.43 грн |
| DMPH6023SK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 60V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477833 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.44 грн |
| 10+ | 88.23 грн |
| 100+ | 59.32 грн |
| 500+ | 44.05 грн |
| 1000+ | 40.32 грн |
| DMP3028LK3Q-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.96 грн |
| 5000+ | 17.69 грн |
| 7500+ | 16.90 грн |
| 12500+ | 15.04 грн |
| 17500+ | 14.91 грн |
| DMP3028LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 30V 27A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 209841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.78 грн |
| 10+ | 47.71 грн |
| 100+ | 31.13 грн |
| 500+ | 22.53 грн |
| 1000+ | 20.37 грн |
| SMF4L5.0AQ-7 |
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Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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| SBL3045CT-LS |
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Виробник: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPTR-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPBTR-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VP-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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В кошику
од. на суму грн.
| MBR5200VPC-G1 |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPC-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPTR-G1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPBTR-G1 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VP-G1 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPB-E1 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR5200VPB-G1 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE SCHOTTKY 200V 5A DO27
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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| BAS70T-7-G |
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
Description: DIODE SCHOTTKY 70V 70MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 240 V
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| BAS116T-7-G |
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE GEN PURP 85V SOT523
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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| BAW156TQ-7-F-52 |
![]() |
Виробник: Diodes Incorporated
Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Description: Switching Standard Diode SOT523
Packaging: Bulk
Package / Case: SOT-523
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.22 грн |
| PI7C9X2G606PRDNJAE |
![]() |
Виробник: Diodes Incorporated
Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
Description: IC INTFACE SPECIALIZED 196LBGA
Packaging: Tray
Package / Case: 196-LBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 6-Port/6-Lane
Supplier Device Package: 196-LBGA (15x15)
Part Status: Active
на замовлення 3809 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1622.45 грн |
| 10+ | 1109.50 грн |
| 25+ | 991.63 грн |
| 126+ | 841.87 грн |
| AP22653AFDZ-7 |
![]() |
Виробник: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
Description: LOAD SWITCH DFN2020
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
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| AP22653AFDZ-7 |
![]() |
Виробник: Diodes Incorporated
Description: LOAD SWITCH DFN2020
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
Description: LOAD SWITCH DFN2020
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled, Status Flag
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: W-DFN2020-6 (Type A1)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Current, Short Circuit, UVLO
Part Status: Active
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.03 грн |
| 19+ | 17.22 грн |
| 25+ | 15.33 грн |
| 100+ | 12.42 грн |
| 250+ | 11.48 грн |
| 500+ | 10.91 грн |
| 1000+ | 10.27 грн |
| DMP2170U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4641000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.63 грн |
| 6000+ | 6.24 грн |
| 9000+ | 5.53 грн |
| 30000+ | 5.12 грн |
| 75000+ | 4.35 грн |
| 150000+ | 4.18 грн |
| DMP2170U-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4642470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.23 грн |
| 16+ | 20.54 грн |
| 100+ | 10.34 грн |
| 500+ | 8.60 грн |
| 1000+ | 6.69 грн |
| DMN10H700S-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
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| DMN10H700S-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
на замовлення 9976 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.11 грн |
| 13+ | 25.72 грн |
| 100+ | 14.54 грн |
| 500+ | 9.04 грн |
| 1000+ | 6.93 грн |
| 2000+ | 6.03 грн |
| 5000+ | 5.33 грн |
| DMN3042L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2030000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.52 грн |
| 20000+ | 5.77 грн |
| 30000+ | 5.51 грн |
| 50000+ | 4.89 грн |
| 70000+ | 4.78 грн |
| DMN3042L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.8A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
на замовлення 2046277 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.27 грн |
| 16+ | 20.86 грн |
| 100+ | 13.17 грн |
| 500+ | 9.24 грн |
| 1000+ | 8.23 грн |
| 2000+ | 7.38 грн |
| 5000+ | 6.35 грн |
| WX5012D0125.000000 |
Виробник: Diodes Incorporated
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: XO OSCILLATOR SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| PI7C9X3G816GPBHFCE |
![]() |
Виробник: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
Description: PACKET SWITCH H-FCBGA190190-324
Packaging: Tray
Package / Case: 324-BFBGA, FCBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, Serial, SMBus
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/16-Lane
Supplier Device Package: 324-HFCBGA (19x19)
Part Status: Active
на замовлення 38 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4108.20 грн |
| 10+ | 2993.80 грн |
| 25+ | 2952.93 грн |
| DML3012LDC-7A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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В кошику
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| DML3012LDC-7A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 8V~24V V-DFN3030-1
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 4.8mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-12 (Type B)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 122 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.86 грн |
| 10+ | 138.28 грн |
| 100+ | 95.67 грн |
| DML1008LDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
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В кошику
од. на суму грн.
| DML1008LDS-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Voltage - Load: 3.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Part Status: Active
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.03 грн |
| 10+ | 38.57 грн |
| 100+ | 26.86 грн |
| 500+ | 19.68 грн |
| 1000+ | 16.00 грн |
| DMP3007SCG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 22.73 грн |
| 4000+ | 20.16 грн |
| 6000+ | 19.28 грн |
| 10000+ | 17.21 грн |
| DMP3007SCG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
Description: MOSFET P-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 15 V
на замовлення 18453 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.18 грн |
| 10+ | 53.13 грн |
| 100+ | 35.00 грн |
| 500+ | 25.52 грн |
| 1000+ | 23.16 грн |
| ZXMP6A17GQTA-52 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
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В кошику
од. на суму грн.
| ZXMP6A17GTA-52 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN6068SEQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 41V~60V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 638497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 47.87 грн |
| 10+ | 39.87 грн |
| 100+ | 27.63 грн |
| 500+ | 21.66 грн |
| 1000+ | 18.44 грн |
| 2000+ | 16.42 грн |
| D2V5L1BS2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 2.5VWM 6V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 2.5V (Max)
Supplier Device Package: X3-DFN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 2.6V
Voltage - Clamping (Max) @ Ipp: 6V (Typ)
Power - Peak Pulse: 90W
Power Line Protection: No
Part Status: Active
на замовлення 5945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.80 грн |
| 30+ | 10.92 грн |
| 100+ | 5.01 грн |
| 500+ | 4.49 грн |
| 1000+ | 4.27 грн |
| 2000+ | 4.23 грн |
| 5000+ | 4.11 грн |
| GDZ15LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 380000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.65 грн |
| 20000+ | 2.24 грн |
| 30000+ | 2.23 грн |
| 50000+ | 2.01 грн |
| 70000+ | 1.84 грн |
| GDZ15LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 15V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 390777 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 41+ | 8.01 грн |
| 100+ | 3.40 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.83 грн |
| 2000+ | 2.76 грн |
| 5000+ | 2.64 грн |
| GDZ6V2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3430000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.14 грн |
| 20000+ | 2.79 грн |
| 30000+ | 2.77 грн |
| 50000+ | 2.56 грн |
| 70000+ | 2.27 грн |
| GDZ6V2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 6.2V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.4%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3439270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.28 грн |
| 35+ | 9.38 грн |
| 100+ | 4.03 грн |
| 500+ | 3.56 грн |
| 1000+ | 3.34 грн |
| 2000+ | 3.27 грн |
| 5000+ | 3.14 грн |
| GDZ24LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.33 грн |
| 20000+ | 2.23 грн |
| 30000+ | 2.14 грн |
| 50000+ | 1.84 грн |
| GDZ24LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 24V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 259218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 41+ | 8.01 грн |
| 100+ | 3.40 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.83 грн |
| 2000+ | 2.76 грн |
| 5000+ | 2.64 грн |
| GDZ7V5LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
на замовлення 700000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.50 грн |
| GDZ7V5LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5.23%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
на замовлення 709185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.28 грн |
| 35+ | 9.30 грн |
| 100+ | 3.93 грн |
| 500+ | 3.40 грн |
| 1000+ | 3.11 грн |
| 2000+ | 2.79 грн |
| 5000+ | 2.42 грн |
| GDZ11LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.33 грн |
| 20000+ | 2.23 грн |
| 30000+ | 2.14 грн |
| 50000+ | 1.84 грн |
| GDZ11LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 11V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 296213 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 41+ | 8.01 грн |
| 103+ | 3.17 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.54 грн |
| 2000+ | 2.51 грн |
| 5000+ | 2.43 грн |
| GDZ2V7LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.49 грн |
| 20000+ | 2.24 грн |
| 30000+ | 2.23 грн |
| 50000+ | 2.01 грн |
| 70000+ | 1.84 грн |
| GDZ2V7LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.7V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 78055 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.24 грн |
| 52+ | 6.31 грн |
| 100+ | 3.25 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.54 грн |
| 2000+ | 2.47 грн |
| 5000+ | 2.36 грн |
| GDZ4V3LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.65 грн |
| 20000+ | 2.24 грн |
| 30000+ | 2.23 грн |
| 50000+ | 2.01 грн |
| 70000+ | 1.84 грн |
| GDZ4V3LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 214140 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 41+ | 8.01 грн |
| 100+ | 3.40 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.83 грн |
| 2000+ | 2.76 грн |
| 5000+ | 2.64 грн |
| GDZ6V8LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 250MW 2DFN
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Supplier Device Package: X3-DFN0603-2
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
на замовлення 1147038 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.92 грн |
| 43+ | 7.60 грн |
| 100+ | 3.56 грн |
| 500+ | 3.16 грн |
| 1000+ | 2.98 грн |
| 2000+ | 2.91 грн |
| 5000+ | 2.79 грн |
| SBR8U60P5Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 26.05 грн |
| 10000+ | 24.87 грн |
| SBR8U60P5Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.58 грн |
| 10+ | 53.86 грн |
| 100+ | 41.98 грн |
| 500+ | 30.92 грн |
| 1000+ | 26.18 грн |
| 2000+ | 25.94 грн |
| SBR8U60P5Q-13D |
![]() |
Виробник: Diodes Incorporated
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SBR 60V 8A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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