Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73723) > Сторінка 534 з 1229
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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DMWS120H100SM4 | Diodes Incorporated |
Description: SIC MOSFET BVDSS: >1000V TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V |
на замовлення 1857 шт: термін постачання 21-31 дні (днів) |
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PI6ULS5V9306UEX | Diodes Incorporated |
Description: IC XLTR VL BIDIR 8-SOICFeatures: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.3 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
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PI6ULS5V9306UEX | Diodes Incorporated |
Description: IC XLTR VL BIDIR 8-SOICFeatures: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-SOIC Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.3 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 932 шт: термін постачання 21-31 дні (днів) |
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| B170-13-F-2477 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 70 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAR99TA | Diodes Incorporated |
Description: DIODE SWITCHING SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBRT10U60D1Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 10A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SBRT10U60D1Q-13 | Diodes Incorporated |
Description: DIODE SBR 60V 10A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Current - Average Rectified (Io): 10A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 4770 шт: термін постачання 21-31 дні (днів) |
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LSC02120FW | Diodes Incorporated |
Description: DIODE SIL CARB 1.2KV 2A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 105pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: ITO-220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A Current - Reverse Leakage @ Vr: 128 µA @ 1200 V |
на замовлення 3994 шт: термін постачання 21-31 дні (днів) |
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| MBR1040CT-LS | Diodes Incorporated |
Description: SCHOTTKY RECTIFIER Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR1040-LS | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DMN3060LCA3-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMN3060LCA3-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V Power Dissipation (Max): 790mW Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: X4-DSN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V |
на замовлення 11383 шт: термін постачання 21-31 дні (днів) |
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US1KSAFS-13 | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A SMAFSPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA-FS Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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US1KSAFS-13 | Diodes Incorporated |
Description: DIODE STANDARD 800V 1A SMAFSPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA-FS Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 9497 шт: термін постачання 21-31 дні (днів) |
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DMNH6022SSD-13 | Diodes Incorporated |
Description: MOSFET 2NCH 60V 7.1A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMNH6022SSD-13 | Diodes Incorporated |
Description: MOSFET 2NCH 60V 7.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
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MMSZ5228BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 3KQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 370 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 23 Ohms Voltage - Zener (Nom) (Vz): 3.9 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DDTC144EUA-7-F-50 | Diodes Incorporated |
Description: Prebias Transistor SOT323 T&R 3KResistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DSC10A065 | Diodes Incorporated |
Description: DIODE SIL CARB 650V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 436pF @ 100mV, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 8858 шт: термін постачання 21-31 дні (днів) |
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BZX84C27Q-7-F | Diodes Incorporated |
Description: DIODE ZENER 27V 300MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±7.04% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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DMN3016LDN-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.3A 8VDFNRds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Part Status: Active Supplier Device Package: V-DFN3030-8 (Type J) Vgs(th) (Max) @ Id: 2V @ 250µA Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
на замовлення 162000 шт: термін постачання 21-31 дні (днів) |
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DMN3016LDN-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 7.3A 8VDFNRds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.3A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: V-DFN3030-8 (Type J) Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V |
на замовлення 163878 шт: термін постачання 21-31 дні (днів) |
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DMTH4004SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 31A PWRDI5060Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.6W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 440000 шт: термін постачання 21-31 дні (днів) |
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DMTH4004SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 31A PWRDI5060Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.6W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 442494 шт: термін постачання 21-31 дні (днів) |
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DMTH46M7SFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH46M7SFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
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DMTH4014LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH4014LFVWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (SWP) Type UX Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.1W Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 885 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 40V 100A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 88W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 40V 100A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 88W (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 164380 шт: термін постачання 21-31 дні (днів) |
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DMTH41M8SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerDI5060-8 (Type K) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.03W Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH41M8SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 100A PWRDI5060-8Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type K) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.03W Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
на замовлення 1187 шт: термін постачання 21-31 дні (днів) |
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DMTH4008LFDFWQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFNGrade: Automotive Package / Case: 6-UDFN Exposed Pad Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMTH4008LFDFWQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4295 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LFGQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI3333Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH43M8LFGQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI3333Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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DMTH4008LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI5060Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH4008LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V PWRDI5060Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active |
на замовлення 1872 шт: термін постачання 21-31 дні (днів) |
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DMTH4008LFDFWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMTH4008LFDFWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 11.6A 6UDFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4803 шт: термін постачання 21-31 дні (днів) |
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DMTH4007SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A PWRDI50Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14.2A Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 415000 шт: термін постачання 21-31 дні (днів) |
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DMTH4007SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 14.2A PWRDI50Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Current - Continuous Drain (Id) @ 25°C: 14.2A Drain to Source Voltage (Vdss): 40V Power - Max: 2.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 415399 шт: термін постачання 21-31 дні (днів) |
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DMTH45M5LPDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 79A PWRDI50Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UXD) Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 60W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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DMTH45M5LPDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 79A PWRDI50Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UXD) Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 60W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 7519 шт: термін постачання 21-31 дні (днів) |
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| UF32F6204Z | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM3225 T&RBase Resonator: Crystal Frequency: 156.25 MHz Part Status: Active Height - Seated (Max): 0.041" (1.05mm) Current - Supply (Max): 50mA Voltage - Supply: 2.5V ~ 3.3V Frequency Stability: ±25ppm Operating Temperature: -40°C ~ 85°C Type: XO (Standard) Function: Enable/Disable Output: LVPECL Mounting Type: Surface Mount Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Package / Case: 6-SMD, No Lead Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| UF32F6204Z | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM3225 T&RBase Resonator: Crystal Frequency: 156.25 MHz Part Status: Active Height - Seated (Max): 0.041" (1.05mm) Current - Supply (Max): 50mA Voltage - Supply: 2.5V ~ 3.3V Frequency Stability: ±25ppm Operating Temperature: -40°C ~ 85°C Type: XO (Standard) Function: Enable/Disable Output: LVPECL Mounting Type: Surface Mount Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Package / Case: 6-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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APX809S00-26SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: SOT-23-3 Voltage - Threshold: 2.63V Reset Timeout: 1ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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APX809S00-26SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: SOT-23-3 Voltage - Threshold: 2.63V Reset Timeout: 1ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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APX809S05-31SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23Reset: Active Low Type: Simple Reset/Power-On Reset Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: SOT-23-3 Voltage - Threshold: 3.08V Reset Timeout: 20ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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APX809S05-31SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: SOT-23-3 Voltage - Threshold: 3.08V Reset Timeout: 20ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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APX809S05-46SR-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: SOT-23-3 Voltage - Threshold: 4.63V Reset Timeout: 20ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 125°C (TA) Reset: Active Low Type: Simple Reset/Power-On Reset Output: Push-Pull, Totem Pole Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MMBZ5235BS-7 | Diodes Incorporated |
Description: DIODE ZENER ARRAY 6.8V SOT363Part Status: Active Packaging: Cut Tape (CT) |
на замовлення 733 шт: термін постачання 21-31 дні (днів) |
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MMBZ5235BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3KQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3 µA @ 5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 350 mW Part Status: Active Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 5 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) |
на замовлення 81000 шт: термін постачання 21-31 дні (днів) |
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| MMBZ5235BT-7-G | Diodes Incorporated |
Description: DIODE ZENER SOT523 Part Status: Obsolete Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MMBZ5235B-7-G | Diodes Incorporated |
Description: DIODE ZENER SOT523 Part Status: Obsolete Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LM2902QS14-13 | Diodes Incorporated |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA (x4 Channels) Slew Rate: 0.3V/µs Gain Bandwidth Product: 700 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 2 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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LM2902QS14-13 | Diodes Incorporated |
Description: IC OPAMP GP 4 CIRCUIT 14SOPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1mA (x4 Channels) Slew Rate: 0.3V/µs Gain Bandwidth Product: 700 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SO Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 2 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 2351 шт: термін постачання 21-31 дні (днів) |
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BZT52C12SQ-7-F | Diodes Incorporated |
Description: DIODE ZENER 12V 200MW SOD323Packaging: Tape & Reel (TR) Tolerance: ±5.41% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52C12SQ-7-F | Diodes Incorporated |
Description: DIODE ZENER 12V 200MW SOD323Packaging: Cut Tape (CT) Tolerance: ±5.41% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMDT5451Q-7 | Diodes Incorporated |
Description: SS HI VOLTAGE TRANSISTOR SOT363Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-363 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 160V, 150V Current - Collector (Ic) (Max): 200mA Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| DMWS120H100SM4 |
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Виробник: Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
Description: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V
на замовлення 1857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1368.54 грн |
| 30+ | 831.09 грн |
| 120+ | 776.35 грн |
| PI6ULS5V9306UEX |
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Виробник: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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| PI6ULS5V9306UEX |
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Виробник: Diodes Incorporated
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.3 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 48.68 грн |
| 25+ | 43.96 грн |
| 100+ | 36.38 грн |
| 250+ | 34.06 грн |
| 500+ | 32.65 грн |
| B170-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 70 V
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| BAR99TA |
Виробник: Diodes Incorporated
Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Description: DIODE SWITCHING SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Part Status: Obsolete
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| SBRT10U60D1Q-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.56 грн |
| SBRT10U60D1Q-13 |
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Виробник: Diodes Incorporated
Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SBR 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 46.95 грн |
| 100+ | 39.18 грн |
| 500+ | 28.80 грн |
| 1000+ | 26.23 грн |
| LSC02120FW |
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Виробник: Diodes Incorporated
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 2A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 105pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: ITO-220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 128 µA @ 1200 V
на замовлення 3994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.17 грн |
| 10+ | 194.13 грн |
| 100+ | 159.06 грн |
| 500+ | 127.07 грн |
| 1000+ | 107.17 грн |
| 2000+ | 101.81 грн |
| MBR1040CT-LS |
Виробник: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товару немає в наявності
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| MBR1040-LS |
Виробник: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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| DMN3060LCA3-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.53 грн |
| DMN3060LCA3-7 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
Description: MOSFET N-CH 30V 3.9A X4DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
Power Dissipation (Max): 790mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
на замовлення 11383 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 15+ | 20.98 грн |
| 100+ | 13.34 грн |
| 500+ | 9.41 грн |
| 1000+ | 8.41 грн |
| 2000+ | 7.57 грн |
| 5000+ | 6.54 грн |
| US1KSAFS-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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| US1KSAFS-13 |
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Виробник: Diodes Incorporated
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A SMAFS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FS
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 9497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 20+ | 15.55 грн |
| 100+ | 8.92 грн |
| 500+ | 6.90 грн |
| 1000+ | 5.79 грн |
| 2000+ | 5.43 грн |
| 5000+ | 4.99 грн |
| DMNH6022SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMNH6022SSD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2NCH 60V 7.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 2497 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.06 грн |
| 10+ | 56.08 грн |
| 100+ | 43.75 грн |
| 500+ | 33.92 грн |
| 1000+ | 26.78 грн |
| MMSZ5228BQ-7-F |
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Виробник: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: ZENER DIODE SOD123 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 370 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 23 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.60 грн |
| 6000+ | 2.37 грн |
| 9000+ | 2.01 грн |
| 30000+ | 1.75 грн |
| DDTC144EUA-7-F-50 |
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Виробник: Diodes Incorporated
Description: Prebias Transistor SOT323 T&R 3K
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: Prebias Transistor SOT323 T&R 3K
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DSC10A065 |
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Виробник: Diodes Incorporated
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 436pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO220AC (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 8858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.63 грн |
| 50+ | 116.27 грн |
| 100+ | 105.03 грн |
| 500+ | 80.08 грн |
| 1000+ | 74.15 грн |
| 2000+ | 69.16 грн |
| 5000+ | 62.75 грн |
| BZX84C27Q-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 27V 300MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±7.04%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18.9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.73 грн |
| 6000+ | 3.22 грн |
| 9000+ | 3.03 грн |
| 15000+ | 2.64 грн |
| 21000+ | 2.53 грн |
| 30000+ | 2.41 грн |
| DMN3016LDN-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.31 грн |
| 6000+ | 12.17 грн |
| 9000+ | 11.30 грн |
| 30000+ | 10.40 грн |
| DMN3016LDN-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Description: MOSFET 2N-CH 30V 7.3A 8VDFN
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: V-DFN3030-8 (Type J)
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
на замовлення 163878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 10+ | 32.53 грн |
| 100+ | 22.59 грн |
| 500+ | 16.56 грн |
| 1000+ | 13.46 грн |
| DMTH4004SPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 440000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 43.41 грн |
| 5000+ | 39.71 грн |
| 12500+ | 38.22 грн |
| DMTH4004SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 31A PWRDI5060
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 442494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.19 грн |
| DMTH46M7SFVWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMTH46M7SFVWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 46.34 грн |
| 100+ | 31.20 грн |
| 500+ | 23.86 грн |
| 1000+ | 21.63 грн |
| DMTH4014LFVWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMTH4014LFVWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 31V~40V POWERDI333
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W
Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.14 грн |
| 10+ | 37.06 грн |
| 100+ | 24.43 грн |
| 500+ | 18.23 грн |
| DMTH43M8LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.15 грн |
| 5000+ | 28.76 грн |
| 7500+ | 27.64 грн |
| 12500+ | 24.76 грн |
| 17500+ | 24.21 грн |
| DMTH43M8LK3Q-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 40V 100A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 88W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 164380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.57 грн |
| 10+ | 71.86 грн |
| 100+ | 48.03 грн |
| 500+ | 35.48 грн |
| 1000+ | 32.39 грн |
| DMTH41M8SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH41M8SPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 40V 100A PWRDI5060-8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type K)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.03W
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
на замовлення 1187 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.52 грн |
| 10+ | 106.95 грн |
| 100+ | 74.46 грн |
| 500+ | 58.31 грн |
| DMTH4008LFDFWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Grade: Automotive
Package / Case: 6-UDFN Exposed Pad
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 11.6A 6UDFN
Grade: Automotive
Package / Case: 6-UDFN Exposed Pad
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.12 грн |
| DMTH4008LFDFWQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 11.6A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 40.61 грн |
| 100+ | 26.53 грн |
| 500+ | 19.19 грн |
| 1000+ | 17.36 грн |
| DMTH43M8LFGQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMTH43M8LFGQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI3333
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V PWRDI3333
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.19 грн |
| 10+ | 59.02 грн |
| 100+ | 39.08 грн |
| 500+ | 28.63 грн |
| 1000+ | 26.04 грн |
| DMTH4008LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH4008LPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Description: MOSFET N-CH 40V PWRDI5060
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
на замовлення 1872 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.89 грн |
| 10+ | 43.48 грн |
| 100+ | 28.34 грн |
| 500+ | 20.50 грн |
| 1000+ | 18.54 грн |
| DMTH4008LFDFWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMTH4008LFDFWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 11.6A 6UDFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 990mW (Ta)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 40.68 грн |
| 100+ | 26.46 грн |
| 500+ | 19.68 грн |
| 1000+ | 16.77 грн |
| 2000+ | 16.21 грн |
| DMTH4007SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 415000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.97 грн |
| 5000+ | 34.72 грн |
| DMTH4007SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 14.2A PWRDI50
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 415399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.82 грн |
| 10+ | 82.95 грн |
| 100+ | 55.89 грн |
| 500+ | 41.59 грн |
| 1000+ | 38.09 грн |
| DMTH45M5LPDWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.00 грн |
| 5000+ | 32.90 грн |
| DMTH45M5LPDWQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 7519 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.46 грн |
| 10+ | 81.06 грн |
| 100+ | 54.66 грн |
| 500+ | 40.67 грн |
| 1000+ | 37.79 грн |
| UF32F6204Z |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 234.41 грн |
| UF32F6204Z |
![]() |
Виробник: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Description: CRYSTAL OSCILLATOR SEAM3225 T&R
Base Resonator: Crystal
Frequency: 156.25 MHz
Part Status: Active
Height - Seated (Max): 0.041" (1.05mm)
Current - Supply (Max): 50mA
Voltage - Supply: 2.5V ~ 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVPECL
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 356.64 грн |
| 10+ | 325.09 грн |
| 50+ | 306.99 грн |
| 100+ | 271.16 грн |
| 500+ | 262.68 грн |
| 1000+ | 225.40 грн |
| APX809S00-26SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| APX809S00-26SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 2.63V
Reset Timeout: 1ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| APX809S05-31SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC SUPERVISOR 1 CHANNEL SOT23
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| APX809S05-31SA-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 3.08V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 25+ | 12.45 грн |
| 28+ | 11.02 грн |
| APX809S05-46SR-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.63V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: IC SUPERVISOR 1 CHANNEL SOT23
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: SOT-23-3
Voltage - Threshold: 4.63V
Reset Timeout: 20ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Active Low
Type: Simple Reset/Power-On Reset
Output: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MMBZ5235BS-7 |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 6.8V SOT363
Part Status: Active
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 6.8V SOT363
Part Status: Active
Packaging: Cut Tape (CT)
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.05 грн |
| 55+ | 5.59 грн |
| 100+ | 4.79 грн |
| 500+ | 4.00 грн |
| MMBZ5235BQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: ZENER DIODE SOT23 T&R 3K
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Part Status: Active
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.40 грн |
| 6000+ | 2.18 грн |
| 9000+ | 1.86 грн |
| 30000+ | 1.61 грн |
| 75000+ | 1.40 грн |
| MMBZ5235BT-7-G |
Виробник: Diodes Incorporated
Description: DIODE ZENER SOT523
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: DIODE ZENER SOT523
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5235B-7-G |
Виробник: Diodes Incorporated
Description: DIODE ZENER SOT523
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Description: DIODE ZENER SOT523
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
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| LM2902QS14-13 |
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Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x4 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x4 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| LM2902QS14-13 |
![]() |
Виробник: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x4 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 4 CIRCUIT 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1mA (x4 Channels)
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 700 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SO
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 2 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 2351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 23+ | 13.36 грн |
| 26+ | 11.77 грн |
| 50+ | 10.19 грн |
| 100+ | 9.46 грн |
| BZT52C12SQ-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5.41%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±5.41%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52C12SQ-7-F |
![]() |
Виробник: Diodes Incorporated
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5.41%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 12V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5.41%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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| MMDT5451Q-7 |
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Виробник: Diodes Incorporated
Description: SS HI VOLTAGE TRANSISTOR SOT363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: SS HI VOLTAGE TRANSISTOR SOT363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 160V, 150V
Current - Collector (Ic) (Max): 200mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.46 грн |
| 6000+ | 6.08 грн |
| 9000+ | 5.39 грн |
| 30000+ | 4.99 грн |





















