Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74578) > Сторінка 1217 з 1243
Фото | Назва | Виробник | Інформація |
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DMP6185SK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -15A Power dissipation: 1.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 14nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR20A200CTB-13 | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Case: D2PAK Max. load current: 20A Technology: SBR® Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR20A200CT-G | DIODES INCORPORATED |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO220AB Max. load current: 20A Technology: SBR® Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR20A200CTB | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: TO263AB Technology: SBR® Max. forward voltage: 0.96V Max. forward impulse current: 180A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SBR20A200CTFP | DIODES INCORPORATED |
![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Case: ITO220AB Max. load current: 20A Technology: SBR® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D5V0F1U2S9-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Semiconductor structure: unidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Max. forward impulse current: 1.5A |
на замовлення 9820 шт: термін постачання 21-30 дні (днів) |
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SMCJ120CA-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 7.9A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV170Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.125A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 4775 шт: термін постачання 21-30 дні (днів) |
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BAV170T-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT523 Max. forward voltage: 1.1V Kind of package: reel; tape Features of semiconductor devices: small signal |
на замовлення 2719 шт: термін постачання 21-30 дні (днів) |
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BAV170-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A Features of semiconductor devices: small signal |
на замовлення 3070 шт: термін постачання 21-30 дні (днів) |
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BAV170Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: small signal Application: automotive industry Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SMF4L18AQ-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: DO219AA Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT458QTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.225A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 50MHz Pulsed collector current: 1A Current gain: 15...300 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MMBF170Q-13-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 0.8A On-state resistance: 5.3Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MMBF170Q-7-F | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 0.8A On-state resistance: 5.3Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MMBF170-13-F | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BZX84C15-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 3029 шт: термін постачання 21-30 дні (днів) |
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BZX84C15-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
на замовлення 4442 шт: термін постачання 21-30 дні (днів) |
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BZX84C15W-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT323 Semiconductor structure: single diode |
на замовлення 2323 шт: термін постачання 21-30 дні (днів) |
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BZX84C15Q-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C15Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C15S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT363 Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SB3100-T | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.79V Load current: 3A Max. forward impulse current: 100A Max. off-state voltage: 100V Kind of package: reel; tape Case: DO201AD |
на замовлення 182 шт: термін постачання 21-30 дні (днів) |
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ZXMN3A14FQTA | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2752 шт: термін постачання 21-30 дні (днів) |
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DMN3024LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 1.3W Drain current: 5.8A Gate-source voltage: ±20V Drain-source voltage: 30V Kind of package: 13 inch reel; tape |
на замовлення 2458 шт: термін постачання 21-30 дні (днів) |
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DMP3085LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8 Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -3.1A On-state resistance: 70mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
на замовлення 429 шт: термін постачання 21-30 дні (днів) |
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DMC3016LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 8.2/-6.2A On-state resistance: 0.028/0.016Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
на замовлення 577 шт: термін постачання 21-30 дні (днів) |
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DMC4040SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Mounting: SMD Type of transistor: N/P-MOSFET Case: SO8 Polarisation: unipolar On-state resistance: 0.04/0.045Ω Power dissipation: 1.8W Drain current: 7.3/-7.5A Gate-source voltage: ±20V Drain-source voltage: 40/-40V |
на замовлення 613 шт: термін постачання 21-30 дні (днів) |
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DMN3018SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.2A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 454 шт: термін постачання 21-30 дні (днів) |
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DMN4031SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40V Pulsed drain current: 40A Drain current: 5.6A Gate charge: 18.6nC On-state resistance: 50mΩ Power dissipation: 2.6W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN2029USD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.8A On-state resistance: 35mΩ Power dissipation: 0.7W Gate-source voltage: ±8V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP6110SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -24A Drain current: -2.7A On-state resistance: 0.105Ω Power dissipation: 1.2W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP3028LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -30A Drain current: -5.8A Gate charge: 22nC On-state resistance: 38mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3033LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMC4028SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 5.5/-4.2A On-state resistance: 0.028/0.05Ω Power dissipation: 1.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG4822SSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 60A Drain current: 6.6A Gate charge: 10.5nC On-state resistance: 31mΩ Power dissipation: 1.42W Gate-source voltage: ±25V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMG6898LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 30A Drain current: 7.1A Gate charge: 26nC On-state resistance: 23mΩ Power dissipation: 1.28W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN2041LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.92A Pulsed drain current: 30A Power dissipation: 1.16W Case: SO8 Gate-source voltage: ±12V On-state resistance: 41mΩ Mounting: SMD Gate charge: 15.6nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN3015LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 80A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Gate charge: 25.1nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2301SN-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: low Case: U-DFN2020-6 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
на замовлення 2954 шт: термін постачання 21-30 дні (днів) |
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AP2301AFGE-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: low Case: U-DFN3030-8 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
на замовлення 2321 шт: термін постачання 21-30 дні (днів) |
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AP2331W-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: SC59 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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AP2337SA-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23 Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 0.11Ω Output current: 1A Number of channels: 1 Kind of integrated circuit: high-side Case: SOT23 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
AP2311AMP-13 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: high Case: MSOP8EP Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP2311SN-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape On-state resistance: 70mΩ Output current: 2A Number of channels: 1 Kind of integrated circuit: high-side; USB switch Active logical level: high Case: U-DFN2020-6 Mounting: SMD Kind of output: P-Channel Type of integrated circuit: power switch |
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AP2331FJ-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Mounting: SMD Case: U-DFN2020-3 On-state resistance: 0.25Ω Kind of package: reel; tape Supply voltage: 2.7...5.2V DC |
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D6V3H1U2LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.5µA Max. off-state voltage: 6.3V Breakdown voltage: 6.5V Max. forward impulse current: 90A Case: 0201; 0603 |
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D5V0S1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.5µA Max. off-state voltage: 5V Breakdown voltage: 6V Max. forward impulse current: 150A Case: 0201; 0603 |
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D26V0H1U2LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.1µA Max. off-state voltage: 26V Breakdown voltage: 28V Max. forward impulse current: 50A Case: U-DFN1616-2 |
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D22V0H1U2LP1610-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 0.2µA Max. off-state voltage: 22V Breakdown voltage: 23.5V Max. forward impulse current: 28A Peak pulse power dissipation: 1kW Case: 0201; 0603 |
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DRTR5V0U4LP16-7 | DIODES INCORPORATED |
![]() Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6V Mounting: SMD Case: U-DFN1616-6 Max. off-state voltage: 5.5V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 1.5pF |
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DMG7408SFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 66A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
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DMP2100UFU-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET x2 Drain-source voltage: -20V Drain current: -4.1A On-state resistance: 75mΩ Power dissipation: 0.9W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: U-DFN2030-6 |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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DMP2100UQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD Polarisation: unipolar Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3.4A On-state resistance: 75mΩ Power dissipation: 0.8W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Application: automotive industry Case: SOT23 |
на замовлення 2255 шт: термін постачання 21-30 дні (днів) |
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BZX84C43-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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BZX84C43Q-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.35W Zener voltage: 43V Mounting: SMD Tolerance: ±7% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
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2DA1797-13 | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89 Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 3A Power dissipation: 2W Pulsed collector current: 6A Collector-emitter voltage: 50V Current gain: 82...270 Quantity in set/package: 2500pcs. Frequency: 160MHz |
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SDM20N40A-7 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 50pF Leakage current: 3mA Load current: 0.2A Power dissipation: 0.2W Max. forward voltage: 0.55V Semiconductor structure: common anode; double Max. forward impulse current: 1A Max. off-state voltage: 40V |
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B330A-13-F | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Capacitance: 200pF Power dissipation: 0.85W Load current: 3A Max. off-state voltage: 30V Max. forward impulse current: 80A Case: SMA |
на замовлення 3624 шт: термін постачання 21-30 дні (днів) |
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BZT52C11-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 11V Mounting: SMD Tolerance: ±5.5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 2384 шт: термін постачання 21-30 дні (днів) |
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DMP6185SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SBR20A200CTB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Case: D2PAK
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Case: D2PAK
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CT-G |
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CTB |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO263AB
Technology: SBR®
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO263AB
Technology: SBR®
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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SBR20A200CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
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D5V0F1U2S9-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
на замовлення 9820 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.66 грн |
25+ | 18.68 грн |
100+ | 7.84 грн |
171+ | 5.46 грн |
470+ | 5.15 грн |
SMCJ120CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BAV170Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 4775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
175+ | 2.27 грн |
500+ | 1.91 грн |
1350+ | 1.81 грн |
BAV170T-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2719 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
57+ | 6.97 грн |
61+ | 6.49 грн |
72+ | 5.54 грн |
100+ | 5.14 грн |
288+ | 3.24 грн |
790+ | 3.06 грн |
BAV170-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 3070 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 7.03 грн |
91+ | 4.35 грн |
114+ | 3.48 грн |
157+ | 2.53 грн |
679+ | 1.37 грн |
1866+ | 1.30 грн |
BAV170Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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SMF4L18AQ-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
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FMMT458QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
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MMBF170Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170-13-F |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 1.70 грн |
BZX84C15-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3029 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 8.02 грн |
122+ | 3.25 грн |
157+ | 2.53 грн |
500+ | 2.04 грн |
712+ | 1.31 грн |
1958+ | 1.24 грн |
BZX84C15-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4442 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.84 грн |
260+ | 1.60 грн |
500+ | 1.43 грн |
720+ | 1.30 грн |
1980+ | 1.22 грн |
BZX84C15W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2323 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
29+ | 13.78 грн |
36+ | 11.16 грн |
48+ | 8.31 грн |
100+ | 4.33 грн |
395+ | 2.36 грн |
1085+ | 2.23 грн |
BZX84C15Q-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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SB3100-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
на замовлення 182 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.30 грн |
12+ | 33.09 грн |
57+ | 16.55 грн |
155+ | 15.60 грн |
ZXMN3A14FQTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.34 грн |
12+ | 33.73 грн |
39+ | 24.15 грн |
100+ | 23.04 грн |
106+ | 22.80 грн |
500+ | 21.93 грн |
DMN3024LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 1.3W
Drain current: 5.8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 1.3W
Drain current: 5.8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
на замовлення 2458 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.45 грн |
11+ | 36.02 грн |
54+ | 17.26 грн |
148+ | 16.31 грн |
1000+ | 15.83 грн |
DMP3085LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.84 грн |
20+ | 20.74 грн |
23+ | 17.34 грн |
50+ | 11.40 грн |
100+ | 9.82 грн |
142+ | 6.57 грн |
390+ | 6.18 грн |
DMC3016LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
на замовлення 577 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.63 грн |
13+ | 31.04 грн |
66+ | 14.17 грн |
181+ | 13.38 грн |
DMC4040SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
на замовлення 613 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.97 грн |
10+ | 46.63 грн |
36+ | 26.36 грн |
98+ | 24.86 грн |
100+ | 23.99 грн |
DMN3018SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 454 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.34 грн |
13+ | 30.72 грн |
63+ | 14.88 грн |
172+ | 14.09 грн |
DMN4031SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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од. на суму грн.
DMN2029USD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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од. на суму грн.
DMP6110SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
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од. на суму грн.
DMP3028LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
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В кошику
од. на суму грн.
DMN3033LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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од. на суму грн.
DMC4028SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
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од. на суму грн.
DMG4822SSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMG6898LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2041LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.92A
Pulsed drain current: 30A
Power dissipation: 1.16W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.92A
Pulsed drain current: 30A
Power dissipation: 1.16W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3015LSD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
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AP2301SN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.43 грн |
23+ | 17.26 грн |
26+ | 15.36 грн |
85+ | 10.93 грн |
234+ | 10.37 грн |
AP2301AFGE-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2321 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.25 грн |
19+ | 21.30 грн |
25+ | 18.92 грн |
61+ | 15.28 грн |
168+ | 14.41 грн |
1000+ | 14.09 грн |
AP2331W-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
21+ | 19.63 грн |
23+ | 17.58 грн |
27+ | 15.20 грн |
50+ | 13.70 грн |
100+ | 12.67 грн |
137+ | 6.81 грн |
376+ | 6.41 грн |
AP2337SA-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2311AMP-13 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2311SN-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2331FJ-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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D6V3H1U2LP16-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
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D5V0S1U2LP1610-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
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D26V0H1U2LP16-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
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D22V0H1U2LP1610-7 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
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DRTR5V0U4LP16-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: U-DFN1616-6
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: U-DFN1616-6
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
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DMG7408SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2100UFU-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
85+ | 10.93 грн |
233+ | 10.37 грн |
DMP2100UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
на замовлення 2255 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
27+ | 15.20 грн |
33+ | 12.11 грн |
100+ | 8.87 грн |
168+ | 5.54 грн |
461+ | 5.23 грн |
BZX84C43-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C43Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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2DA1797-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 2W
Pulsed collector current: 6A
Collector-emitter voltage: 50V
Current gain: 82...270
Quantity in set/package: 2500pcs.
Frequency: 160MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 2W
Pulsed collector current: 6A
Collector-emitter voltage: 50V
Current gain: 82...270
Quantity in set/package: 2500pcs.
Frequency: 160MHz
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SDM20N40A-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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B330A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
на замовлення 3624 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.40 грн |
18+ | 22.56 грн |
25+ | 19.79 грн |
100+ | 16.07 грн |
161+ | 5.78 грн |
443+ | 5.46 грн |
BZT52C11-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
53+ | 8.09 грн |
68+ | 5.86 грн |
81+ | 4.91 грн |
112+ | 3.55 грн |
183+ | 2.17 грн |
500+ | 1.49 грн |
781+ | 1.20 грн |
2146+ | 1.13 грн |