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DMP6185SK3-13 DIODES INCORPORATED DMP6185SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SBR20A200CTB-13 DIODES INCORPORATED SBR20A200CTB.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Case: D2PAK
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CT-G DIODES INCORPORATED Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CTB DIODES INCORPORATED SBR20A200CTB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO263AB
Technology: SBR®
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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SBR20A200CTFP DIODES INCORPORATED SBR20A200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
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D5V0F1U2S9-7 D5V0F1U2S9-7 DIODES INCORPORATED D5V0F1U2S9.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
на замовлення 9820 шт:
термін постачання 21-30 дні (днів)
12+36.66 грн
25+18.68 грн
100+7.84 грн
171+5.46 грн
470+5.15 грн
Мінімальне замовлення: 12
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SMCJ120CA-13-F SMCJ120CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BAV170Q-13-F BAV170Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9BA108DD715E28&compId=BAV170.pdf?ci_sign=d789b826692d4d0dfdbd0c11bec8f055dea06976 Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 4775 шт:
термін постачання 21-30 дні (днів)
175+2.27 грн
500+1.91 грн
1350+1.81 грн
Мінімальне замовлення: 175
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BAV170T-7-F BAV170T-7-F DIODES INCORPORATED ds30258.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2719 шт:
термін постачання 21-30 дні (днів)
50+8.53 грн
57+6.97 грн
61+6.49 грн
72+5.54 грн
100+5.14 грн
288+3.24 грн
790+3.06 грн
Мінімальне замовлення: 50
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BAV170-7-F BAV170-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 3070 шт:
термін постачання 21-30 дні (днів)
61+7.03 грн
91+4.35 грн
114+3.48 грн
157+2.53 грн
679+1.37 грн
1866+1.30 грн
Мінімальне замовлення: 61
В кошику  од. на суму  грн.
BAV170Q-7-F DIODES INCORPORATED ds30234.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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SMF4L18AQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BBC35FBDFC40DF&compId=SMF4Lxx.pdf?ci_sign=551d5504d5dcf91953dc24f2f08e771c3a2f49cb Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
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FMMT458QTA DIODES INCORPORATED FMMT458.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
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MMBF170Q-13-F DIODES INCORPORATED MMBF170Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170Q-7-F DIODES INCORPORATED MMBF170Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170-13-F DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
10000+1.70 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZX84C15-7-F BZX84C15-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3029 шт:
термін постачання 21-30 дні (днів)
54+8.02 грн
122+3.25 грн
157+2.53 грн
500+2.04 грн
712+1.31 грн
1958+1.24 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
BZX84C15-13-F BZX84C15-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4442 шт:
термін постачання 21-30 дні (днів)
120+3.84 грн
260+1.60 грн
500+1.43 грн
720+1.30 грн
1980+1.22 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
BZX84C15W-7-F BZX84C15W-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2323 шт:
термін постачання 21-30 дні (днів)
22+19.61 грн
29+13.78 грн
36+11.16 грн
48+8.31 грн
100+4.33 грн
395+2.36 грн
1085+2.23 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BZX84C15Q-13-F BZX84C15Q-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15Q-7-F BZX84C15Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15S-7-F BZX84C15S-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4 Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
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SB3100-T SB3100-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9DDCD6A79DB8BF&compId=SB370_ser.pdf?ci_sign=cb2be17d7d152b4a7c9de02bddfb086a3de83047 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
9+50.30 грн
12+33.09 грн
57+16.55 грн
155+15.60 грн
Мінімальне замовлення: 9
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ZXMN3A14FQTA ZXMN3A14FQTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBFFFD553CB8BF&compId=ZXMN3A14FQ.pdf?ci_sign=b9d314bde3938287f8305de683227e33ed925adc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)
10+44.34 грн
12+33.73 грн
39+24.15 грн
100+23.04 грн
106+22.80 грн
500+21.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3024LSD-13 DMN3024LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C952E40FC658BF&compId=DMN3024LSD.pdf?ci_sign=7f34657f21f8fb2a6a393880a7b83fa9361c5ebe Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 1.3W
Drain current: 5.8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
на замовлення 2458 шт:
термін постачання 21-30 дні (днів)
9+49.45 грн
11+36.02 грн
54+17.26 грн
148+16.31 грн
1000+15.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DMP3085LSD-13 DMP3085LSD-13 DIODES INCORPORATED DMP3085LSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)
15+29.84 грн
20+20.74 грн
23+17.34 грн
50+11.40 грн
100+9.82 грн
142+6.57 грн
390+6.18 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DMC3016LSD-13 DMC3016LSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3E2208D391BF&compId=DMC3016LSD-13.pdf?ci_sign=d72901774559942985f9b78ce99691501b2989f6 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
на замовлення 577 шт:
термін постачання 21-30 дні (днів)
10+42.63 грн
13+31.04 грн
66+14.17 грн
181+13.38 грн
Мінімальне замовлення: 10
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DMC4040SSD-13 DMC4040SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B620BF7B371BF&compId=DMC4040SSD-13.pdf?ci_sign=5426a6483a06679a3718b4ffea5f592d0cd6dc55 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
на замовлення 613 шт:
термін постачання 21-30 дні (днів)
5+86.97 грн
10+46.63 грн
36+26.36 грн
98+24.86 грн
100+23.99 грн
Мінімальне замовлення: 5
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DMN3018SSD-13 DMN3018SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94696681B38BF&compId=DMN3018SSD.pdf?ci_sign=3ddd7e76af5e043c2c7d197228109906ddb60d02 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
10+44.34 грн
13+30.72 грн
63+14.88 грн
172+14.09 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2029USD-13 DMN2029USD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8D9E8985098BF&compId=DMN2029USD.pdf?ci_sign=7a0d3450b78f0d7f8cb39fa463423592c594dc39 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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DMP6110SSD-13 DMP6110SSD-13 DIODES INCORPORATED DMP6110SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
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DMP3028LSD-13 DMP3028LSD-13 DIODES INCORPORATED DMP3028LSD.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
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DMN3033LSD-13 DMN3033LSD-13 DIODES INCORPORATED ds31262.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC4028SSD-13 DMC4028SSD-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4F4F6FE5F1BF&compId=DMC4028SSD-13.pdf?ci_sign=4bd5ae437f532333a0613bd45d05f0e7500330ff Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
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DMG4822SSD-13 DMG4822SSD-13 DIODES INCORPORATED DMG4822SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMG6898LSD-13 DMG6898LSD-13 DIODES INCORPORATED DMG6898LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
DMN2041LSD-13 DMN2041LSD-13 DIODES INCORPORATED ds31964.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.92A
Pulsed drain current: 30A
Power dissipation: 1.16W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3015LSD-13 DMN3015LSD-13 DIODES INCORPORATED DMN3015LSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
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AP2301SN-7 AP2301SN-7 DIODES INCORPORATED AP2301-11.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)
17+26.43 грн
23+17.26 грн
26+15.36 грн
85+10.93 грн
234+10.37 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP2301AFGE-7 AP2301AFGE-7 DIODES INCORPORATED AP23x1A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2321 шт:
термін постачання 21-30 дні (днів)
13+33.25 грн
19+21.30 грн
25+18.92 грн
61+15.28 грн
168+14.41 грн
1000+14.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP2331W-7 AP2331W-7 DIODES INCORPORATED AP2331.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
21+19.63 грн
23+17.58 грн
27+15.20 грн
50+13.70 грн
100+12.67 грн
137+6.81 грн
376+6.41 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP2337SA-7 AP2337SA-7 DIODES INCORPORATED AP2337.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2311AMP-13 DIODES INCORPORATED AP23x1A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2311SN-7 DIODES INCORPORATED AP2301-11.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2331FJ-7 DIODES INCORPORATED AP2331.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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В кошику  од. на суму  грн.
D6V3H1U2LP16-7 DIODES INCORPORATED D6V3H1U2LP16.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
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D5V0S1U2LP1610-7 DIODES INCORPORATED D5V0S1U2LP1610.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
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D26V0H1U2LP16-7 DIODES INCORPORATED D26V0H1U2LP16.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
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D22V0H1U2LP1610-7 DIODES INCORPORATED D22V0H1U2LP1610.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
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DRTR5V0U4LP16-7 DIODES INCORPORATED DRTR5V0U4LP16.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: U-DFN1616-6
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
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DMG7408SFG-7 DIODES INCORPORATED DMG7408SFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2100UFU-7 DMP2100UFU-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0992CC02D98BF&compId=DMP2100UFU.pdf?ci_sign=5315353b7560af1cb783fdff6e0a53723655aa57 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)
23+18.76 грн
85+10.93 грн
233+10.37 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DMP2100UQ-7 DMP2100UQ-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAD801589F23E27&compId=DMP2100U-DTE.pdf?ci_sign=d7d554be41070d18f8dbf28dd377f7429a0ea697 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
на замовлення 2255 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
27+15.20 грн
33+12.11 грн
100+8.87 грн
168+5.54 грн
461+5.23 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZX84C43-7-F BZX84C43-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835 Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C43Q-7-F DIODES INCORPORATED ds18001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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2DA1797-13 DIODES INCORPORATED ds31619.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 2W
Pulsed collector current: 6A
Collector-emitter voltage: 50V
Current gain: 82...270
Quantity in set/package: 2500pcs.
Frequency: 160MHz
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SDM20N40A-7 SDM20N40A-7 DIODES INCORPORATED SDM20N40A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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B330A-13-F B330A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EA383D53230469&compId=B320A-13-F.pdf?ci_sign=edde656f9367791a6672056dbd13e96b0d748afe Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
на замовлення 3624 шт:
термін постачання 21-30 дні (днів)
14+32.40 грн
18+22.56 грн
25+19.79 грн
100+16.07 грн
161+5.78 грн
443+5.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BZT52C11-7-F BZT52C11-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)
53+8.09 грн
68+5.86 грн
81+4.91 грн
112+3.55 грн
183+2.17 грн
500+1.49 грн
781+1.20 грн
2146+1.13 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
DMP6185SK3-13 DMP6185SK3.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -15A; 1.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -15A
Power dissipation: 1.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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SBR20A200CTB-13 SBR20A200CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 30ns; D2PAK; SBR®; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Case: D2PAK
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CT-G
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; TO220AB; 30ns; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Max. load current: 20A
Technology: SBR®
Reverse recovery time: 30ns
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SBR20A200CTB SBR20A200CTB.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263AB; SBR®; SMD; 200V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO263AB
Technology: SBR®
Max. forward voltage: 0.96V
Max. forward impulse current: 180A
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SBR20A200CTFP SBR20A200.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; ITO220AB; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Case: ITO220AB
Max. load current: 20A
Technology: SBR®
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D5V0F1U2S9-7 D5V0F1U2S9.pdf
D5V0F1U2S9-7
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 1.5A; unidirectional; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
на замовлення 9820 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.66 грн
25+18.68 грн
100+7.84 грн
171+5.46 грн
470+5.15 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMCJ120CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ120CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 133÷147V; 7.9A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 7.9A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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BAV170Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BE9BA108DD715E28&compId=BAV170.pdf?ci_sign=d789b826692d4d0dfdbd0c11bec8f055dea06976
BAV170Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.125A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.125A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 4775 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
175+2.27 грн
500+1.91 грн
1350+1.81 грн
Мінімальне замовлення: 175
В кошику  од. на суму  грн.
BAV170T-7-F ds30258.pdf
BAV170T-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT523; Ufmax: 1.1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT523
Max. forward voltage: 1.1V
Kind of package: reel; tape
Features of semiconductor devices: small signal
на замовлення 2719 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.53 грн
57+6.97 грн
61+6.49 грн
72+5.54 грн
100+5.14 грн
288+3.24 грн
790+3.06 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BAV170-7-F ds30234.pdf
BAV170-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Features of semiconductor devices: small signal
на замовлення 3070 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
61+7.03 грн
91+4.35 грн
114+3.48 грн
157+2.53 грн
679+1.37 грн
1866+1.30 грн
Мінімальне замовлення: 61
В кошику  од. на суму  грн.
BAV170Q-7-F ds30234.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.215A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. load current: 0.5A
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SMF4L18AQ-7 pVersion=0046&contRep=ZT&docId=005056AB281E1FD090BBC35FBDFC40DF&compId=SMF4Lxx.pdf?ci_sign=551d5504d5dcf91953dc24f2f08e771c3a2f49cb
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; DO219AA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: DO219AA
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Application: automotive industry
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FMMT458QTA FMMT458.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.225A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.225A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 50MHz
Pulsed collector current: 1A
Current gain: 15...300
Application: automotive industry
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MMBF170Q-13-F MMBF170Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170Q-7-F MMBF170Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; Idm: 0.8A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 0.8A
On-state resistance: 5.3Ω
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MMBF170-13-F
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+1.70 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZX84C15-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C15-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 3029 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
54+8.02 грн
122+3.25 грн
157+2.53 грн
500+2.04 грн
712+1.31 грн
1958+1.24 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
BZX84C15-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C15-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 4442 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
120+3.84 грн
260+1.60 грн
500+1.43 грн
720+1.30 грн
1980+1.22 грн
Мінімальне замовлення: 120
В кошику  од. на суму  грн.
BZX84C15W-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5491A0DC02A18&compId=BZX84CxxW_SER.pdf?ci_sign=8a2a06cc8c633298190a934cdaa38decab06318e
BZX84C15W-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT323
Semiconductor structure: single diode
на замовлення 2323 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+19.61 грн
29+13.78 грн
36+11.16 грн
48+8.31 грн
100+4.33 грн
395+2.36 грн
1085+2.23 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BZX84C15Q-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C15Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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BZX84C15Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C15Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
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BZX84C15S-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED555EFADD04A18&compId=BZX84CxxS_SER.pdf?ci_sign=d1c40ee3a792582c17d25ab936cb7f388060d3e4
BZX84C15S-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOT363; double independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT363
Semiconductor structure: double independent
товару немає в наявності
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SB3100-T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9DDCD6A79DB8BF&compId=SB370_ser.pdf?ci_sign=cb2be17d7d152b4a7c9de02bddfb086a3de83047
SB3100-T
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.79V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Kind of package: reel; tape
Case: DO201AD
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.30 грн
12+33.09 грн
57+16.55 грн
155+15.60 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ZXMN3A14FQTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBFFFD553CB8BF&compId=ZXMN3A14FQ.pdf?ci_sign=b9d314bde3938287f8305de683227e33ed925adc
ZXMN3A14FQTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.34 грн
12+33.73 грн
39+24.15 грн
100+23.04 грн
106+22.80 грн
500+21.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN3024LSD-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C952E40FC658BF&compId=DMN3024LSD.pdf?ci_sign=7f34657f21f8fb2a6a393880a7b83fa9361c5ebe
DMN3024LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
On-state resistance: 36mΩ
Power dissipation: 1.3W
Drain current: 5.8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of package: 13 inch reel; tape
на замовлення 2458 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.45 грн
11+36.02 грн
54+17.26 грн
148+16.31 грн
1000+15.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DMP3085LSD-13 DMP3085LSD.pdf
DMP3085LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.1A; Idm: -20A; 1.1W; SO8
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -3.1A
On-state resistance: 70mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 429 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.84 грн
20+20.74 грн
23+17.34 грн
50+11.40 грн
100+9.82 грн
142+6.57 грн
390+6.18 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DMC3016LSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B3E2208D391BF&compId=DMC3016LSD-13.pdf?ci_sign=d72901774559942985f9b78ce99691501b2989f6
DMC3016LSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 8.2/-6.2A
On-state resistance: 0.028/0.016Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
на замовлення 577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+42.63 грн
13+31.04 грн
66+14.17 грн
181+13.38 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMC4040SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B620BF7B371BF&compId=DMC4040SSD-13.pdf?ci_sign=5426a6483a06679a3718b4ffea5f592d0cd6dc55
DMC4040SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SO8
Polarisation: unipolar
On-state resistance: 0.04/0.045Ω
Power dissipation: 1.8W
Drain current: 7.3/-7.5A
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
на замовлення 613 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+86.97 грн
10+46.63 грн
36+26.36 грн
98+24.86 грн
100+23.99 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMN3018SSD-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C94696681B38BF&compId=DMN3018SSD.pdf?ci_sign=3ddd7e76af5e043c2c7d197228109906ddb60d02
DMN3018SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.2A
Power dissipation: 1.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 454 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.34 грн
13+30.72 грн
63+14.88 грн
172+14.09 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40V
Pulsed drain current: 40A
Drain current: 5.6A
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2029USD-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8D9E8985098BF&compId=DMN2029USD.pdf?ci_sign=7a0d3450b78f0d7f8cb39fa463423592c594dc39
DMN2029USD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.8A; 0.7W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.8A
On-state resistance: 35mΩ
Power dissipation: 0.7W
Gate-source voltage: ±8V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
товару немає в наявності
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DMP6110SSD-13 DMP6110SSD.pdf
DMP6110SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.7A; Idm: -24A; 1.2W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -24A
Drain current: -2.7A
On-state resistance: 0.105Ω
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
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DMP3028LSD-13 DMP3028LSD.pdf
DMP3028LSD-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -30A
Drain current: -5.8A
Gate charge: 22nC
On-state resistance: 38mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
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DMN3033LSD-13 ds31262.pdf
DMN3033LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMC4028SSD-13 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B4F4F6FE5F1BF&compId=DMC4028SSD-13.pdf?ci_sign=4bd5ae437f532333a0613bd45d05f0e7500330ff
DMC4028SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 5.5/-4.2A
On-state resistance: 0.028/0.05Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
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DMG4822SSD-13 DMG4822SSD.pdf
DMG4822SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.6A; Idm: 60A; 1.42W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 60A
Drain current: 6.6A
Gate charge: 10.5nC
On-state resistance: 31mΩ
Power dissipation: 1.42W
Gate-source voltage: ±25V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMG6898LSD-13 DMG6898LSD.pdf
DMG6898LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 30A; 1.28W; SO8
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 30A
Drain current: 7.1A
Gate charge: 26nC
On-state resistance: 23mΩ
Power dissipation: 1.28W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN2041LSD-13 ds31964.pdf
DMN2041LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.92A; Idm: 30A; 1.16W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.92A
Pulsed drain current: 30A
Power dissipation: 1.16W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 15.6nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN3015LSD-13 DMN3015LSD.pdf
DMN3015LSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 80A; 1W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 80A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 25.1nC
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AP2301SN-7 AP2301-11.pdf
AP2301SN-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2954 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.43 грн
23+17.26 грн
26+15.36 грн
85+10.93 грн
234+10.37 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP2301AFGE-7 AP23x1A.pdf
AP2301AFGE-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Case: U-DFN3030-8
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
на замовлення 2321 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.25 грн
19+21.30 грн
25+18.92 грн
61+15.28 грн
168+14.41 грн
1000+14.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
AP2331W-7 AP2331.pdf
AP2331W-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; SC59; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: SC59
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
21+19.63 грн
23+17.58 грн
27+15.20 грн
50+13.70 грн
100+12.67 грн
137+6.81 грн
376+6.41 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP2337SA-7 AP2337.pdf
AP2337SA-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; SOT23
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 0.11Ω
Output current: 1A
Number of channels: 1
Kind of integrated circuit: high-side
Case: SOT23
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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AP2311AMP-13 AP23x1A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: MSOP8EP
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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В кошику  од. на суму  грн.
AP2311SN-7 AP2301-11.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
On-state resistance: 70mΩ
Output current: 2A
Number of channels: 1
Kind of integrated circuit: high-side; USB switch
Active logical level: high
Case: U-DFN2020-6
Mounting: SMD
Kind of output: P-Channel
Type of integrated circuit: power switch
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В кошику  од. на суму  грн.
AP2331FJ-7 AP2331.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; SMD; U-DFN2020-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Mounting: SMD
Case: U-DFN2020-3
On-state resistance: 0.25Ω
Kind of package: reel; tape
Supply voltage: 2.7...5.2V DC
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D6V3H1U2LP16-7 D6V3H1U2LP16.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.5V; 90A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 6.3V
Breakdown voltage: 6.5V
Max. forward impulse current: 90A
Case: 0201; 0603
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D5V0S1U2LP1610-7 D5V0S1U2LP1610.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6V; 150A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 6V
Max. forward impulse current: 150A
Case: 0201; 0603
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D26V0H1U2LP16-7 D26V0H1U2LP16.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 28V; 50A; unidirectional; U-DFN1616-2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Max. off-state voltage: 26V
Breakdown voltage: 28V
Max. forward impulse current: 50A
Case: U-DFN1616-2
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D22V0H1U2LP1610-7 D22V0H1U2LP1610.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 23.5V; 28A; unidirectional; 0201,0603; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 0.2µA
Max. off-state voltage: 22V
Breakdown voltage: 23.5V
Max. forward impulse current: 28A
Peak pulse power dissipation: 1kW
Case: 0201; 0603
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DRTR5V0U4LP16-7 DRTR5V0U4LP16.pdf
Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; U-DFN1616-6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6V
Mounting: SMD
Case: U-DFN1616-6
Max. off-state voltage: 5.5V
Leakage current: 0.1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 1.5pF
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DMG7408SFG-7 DMG7408SFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Pulsed drain current: 66A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMP2100UFU-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E0992CC02D98BF&compId=DMP2100UFU.pdf?ci_sign=5315353b7560af1cb783fdff6e0a53723655aa57
DMP2100UFU-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET x2
Drain-source voltage: -20V
Drain current: -4.1A
On-state resistance: 75mΩ
Power dissipation: 0.9W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Case: U-DFN2030-6
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.76 грн
85+10.93 грн
233+10.37 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DMP2100UQ-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAD801589F23E27&compId=DMP2100U-DTE.pdf?ci_sign=d7d554be41070d18f8dbf28dd377f7429a0ea697
DMP2100UQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3.4A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: SOT23
на замовлення 2255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
27+15.20 грн
33+12.11 грн
100+8.87 грн
168+5.54 грн
461+5.23 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
BZX84C43-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED543C7B1CA6A18&compId=BZX84Cxx_SER.pdf?ci_sign=a9e2690f63203803ee266631e1b8524845b31835
BZX84C43-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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BZX84C43Q-7-F ds18001.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 43V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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2DA1797-13 ds31619.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 2W; SOT89
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Power dissipation: 2W
Pulsed collector current: 6A
Collector-emitter voltage: 50V
Current gain: 82...270
Quantity in set/package: 2500pcs.
Frequency: 160MHz
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SDM20N40A-7 SDM20N40A.pdf
SDM20N40A-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 40V; 0.2A; reel,tape; 200mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 50pF
Leakage current: 3mA
Load current: 0.2A
Power dissipation: 0.2W
Max. forward voltage: 0.55V
Semiconductor structure: common anode; double
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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B330A-13-F pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EA383D53230469&compId=B320A-13-F.pdf?ci_sign=edde656f9367791a6672056dbd13e96b0d748afe
B330A-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 3A; reel,tape; 850mW
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 200pF
Power dissipation: 0.85W
Load current: 3A
Max. off-state voltage: 30V
Max. forward impulse current: 80A
Case: SMA
на замовлення 3624 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.40 грн
18+22.56 грн
25+19.79 грн
100+16.07 грн
161+5.78 грн
443+5.46 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BZT52C11-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C11-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 11V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 2384 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
53+8.09 грн
68+5.86 грн
81+4.91 грн
112+3.55 грн
183+2.17 грн
500+1.49 грн
781+1.20 грн
2146+1.13 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
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