Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74486) > Сторінка 1217 з 1242
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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ZXTP19100CZTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Case: SOT89 Current gain: 20...500 Mounting: SMD Kind of package: reel; tape Frequency: 142MHz Manufacturer standard package: 1000pcs. Power dissipation: 4.46W Pulsed collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4934-T | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: DO41 Kind of package: reel; tape Max. forward voltage: 1.2V Reverse recovery time: 200ns |
на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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DDZ33ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 33V; SMD; SOD323F; single diode; reel,tape Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323F Zener voltage: 33V Type of diode: Zener Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZT52C18LP-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 18V; SMD; X1-DFN1006-2; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±6.5% Case: X1-DFN1006-2 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZT52C18Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.37W Zener voltage: 18V Mounting: SMD Tolerance: ±6.5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU1002 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A Case: GBU Kind of package: tube Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 200V Electrical mounting: THT Load current: 10A Type of bridge rectifier: single-phase Max. forward impulse current: 220A Version: flat |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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GBU1001 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU1008 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU10005 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GBU1004 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AL17050WT-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 20...400V DC Output voltage: 3.4...20V DC Output current: 60mA Case: TSOT25 Mounting: SMD Frequency: 70kHz Topology: buck Operating temperature: -40...105°C Kind of package: reel; tape Efficiency: 50% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DESD2CAN2SOQ-7 | DIODES INCORPORATED |
Category: Protection diodes - arraysDescription: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 25.4V Semiconductor structure: bidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 10nA Number of channels: 2 Application: automotive industry; CAN Kind of package: reel; tape Capacitance: 30pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT493TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. |
на замовлення 2901 шт: термін постачання 14-30 дні (днів) |
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FMMT493QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 2A Application: automotive industry Current gain: 20...300 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT493ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. Current gain: 300...1200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT491ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. |
на замовлення 2722 шт: термін постачання 14-30 дні (днів) |
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FMMT491TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. Current gain: 30...300 |
на замовлення 2752 шт: термін постачання 14-30 дні (днів) |
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FMMT497TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 500mA; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.5W Case: SOT23 Current gain: 20...300 Mounting: SMD Frequency: 75MHz Manufacturer standard package: 3000pcs. |
на замовлення 2404 шт: термін постачання 14-30 дні (днів) |
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FMMT495TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT494TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23 Mounting: SMD Pulsed collector current: 2A Type of transistor: NPN Current gain: 20...300 Kind of package: reel; tape Case: SOT23 Frequency: 100MHz Collector current: 1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 120V Power dissipation: 0.5W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT491QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 100...300 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FMMT495TC | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 100MHz Pulsed collector current: 2A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FMMT495QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Current gain: 10...300 Mounting: SMD Frequency: 100MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 2A Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT491AQTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 2A Application: automotive industry Current gain: 35...900 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT491TC | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 150MHz Pulsed collector current: 2A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FMMT494QTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23 Mounting: SMD Application: automotive industry Type of transistor: NPN Kind of package: reel; tape Case: SOT23 Frequency: 100MHz Collector current: 1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 120V Power dissipation: 0.5W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMMT494TC | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23 Mounting: SMD Pulsed collector current: 2A Type of transistor: NPN Case: SOT23 Frequency: 100MHz Collector current: 1A Collector-emitter voltage: 120V Power dissipation: 0.5W Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| DMN3055LFDB-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Gate charge: 11.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Pulsed drain current: 25A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN3055LFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.87W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 75mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 25A Gate charge: 11.2nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LVC14AS14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: SO14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of input: with Schmitt trigger Family: LVC Kind of output: push-pull Technology: CMOS Kind of package: reel; tape Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74LVC14AT14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of input: with Schmitt trigger Family: LVC Kind of output: push-pull Technology: CMOS Kind of package: reel; tape Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DXT2010P5-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 3.2W; PowerDI®5 Frequency: 130MHz Mounting: SMD Pulsed collector current: 20A Type of transistor: NPN Current gain: 20...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 6A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 60V Power dissipation: 3.2W Polarisation: bipolar |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| DXT2011P5-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5 Frequency: 130MHz Mounting: SMD Pulsed collector current: 10A Type of transistor: NPN Current gain: 10...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 6A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 100V Power dissipation: 3.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DXT2011P5Q-13 | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5 Frequency: 130MHz Mounting: SMD Pulsed collector current: 10A Application: automotive industry Type of transistor: NPN Current gain: 10...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 6A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 100V Power dissipation: 3.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DXT2012P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5 Frequency: 120MHz Mounting: SMD Pulsed collector current: 15A Type of transistor: PNP Current gain: 10...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 5.5A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 60V Power dissipation: 3.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DXT2013P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5 Frequency: 125MHz Mounting: SMD Pulsed collector current: 10A Type of transistor: PNP Current gain: 5...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 5A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 100V Power dissipation: 3.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DMC4050SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 2.14W Gate charge: 37.56/33.66nC Polarisation: unipolar Drain current: 5.8/-5.8A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 45/45mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMC4029SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.3W Polarisation: unipolar Drain current: 6.5/-9A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.024/0.045Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMC4028SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.8W Polarisation: unipolar Drain current: 5.5/-4.2A Kind of channel: enhancement Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.028/0.05Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| DMC4028SSDQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; automotive industry Mounting: SMD Polarisation: unipolar Application: automotive industry Type of transistor: N/P-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN1150UFB-7B | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Pulsed drain current: 7A Power dissipation: 0.3W Gate charge: 1.5nC Polarisation: unipolar Drain current: 1.15A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Case: X1-DFN1006-3 On-state resistance: 0.21Ω |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DMN1150UFL3-7 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Mounting: SMD Power dissipation: 0.9W Gate charge: 1.4nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±6V Kind of package: 7 inch reel; tape Case: X2-DFN1310-6 On-state resistance: 0.21Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DFLS2100-7 | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: PowerDI®123 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Capacitance: 36pF Max. forward voltage: 0.86V Leakage current: 1µA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DMG9926UDM-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Pulsed drain current: 30A Power dissipation: 0.98W Case: SOT26 Gate-source voltage: ±8V On-state resistance: 40mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DMG9926USD-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 37mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1M-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Max. forward impulse current: 30A Capacitance: 10pF |
на замовлення 11413 шт: термін постачання 14-30 дні (днів) |
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ZXMS6006DT8TA | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; IntelliFET™; unipolar; 60V; 2.8A; 1.16W Type of transistor: N-MOSFET x2 Technology: IntelliFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.8A Power dissipation: 1.16W Case: SM8 On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| AP7176BMP-13 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: AP7176B Input voltage: 0.8...3.65V Output current: 3A Type of integrated circuit: voltage regulator Voltage drop: 530mV Operating temperature: -40...85°C Output voltage: 0.8...3.12V Kind of package: reel; tape Case: MSOP8 Number of channels: 1 Tolerance: ±1.5% |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| AP7176BFN-7 | DIODES INCORPORATED |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: AP7176B Input voltage: 0.8...3.65V Output current: 3A Type of integrated circuit: voltage regulator Voltage drop: 530mV Operating temperature: -40...85°C Output voltage: 0.8...3.12V Kind of package: reel; tape Case: U-DFN3030-10 Number of channels: 1 Tolerance: ±1.5% |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
2N7002W-7-F | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.073A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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SMAJ26CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ26CAQ-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 74LVC3G17SS8-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 3 Technology: CMOS Mounting: SMD Case: SSOP8 Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Supply voltage: 1.65...5.5V DC Kind of input: with Schmitt trigger Kind of output: push-pull Number of inputs: 3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC3G04SS8-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC Type of integrated circuit: digital Number of channels: 3 Technology: CMOS Mounting: SMD Case: SSOP8 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Number of inputs: 3 Kind of integrated circuit: inverter Kind of output: push-pull |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC3G06SS8-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC Type of integrated circuit: digital Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SSOP8 Family: LVC Kind of integrated circuit: inverter Number of channels: 3 Mounting: SMD Supply voltage: 1.65...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC3G34SS8-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC Type of integrated circuit: digital Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SSOP8 Family: LVC Kind of integrated circuit: buffer Number of channels: 3 Mounting: SMD Supply voltage: 1.65...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC3G07SS8-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC Type of integrated circuit: digital Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SSOP8 Family: LVC Kind of integrated circuit: buffer; inverter Number of channels: 3 Mounting: SMD Supply voltage: 1.65...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| AP62800SJ-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷17VDC; Uout: 0.6÷7VDC; 8A; VQFN12 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...17V DC Output voltage: 0.6...7V DC Output current: 8A Case: VQFN12 Mounting: SMD Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Frequency: 400kHz...1.2MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
DMG4511SK4-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V Mounting: SMD Power dissipation: 1.54W Polarisation: unipolar Drain current: 7.8/-8.6A Kind of channel: enhancement Drain-source voltage: 35/-35V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Semiconductor structure: common drain Case: TO252-4 On-state resistance: 0.035/0.045Ω |
на замовлення 2417 шт: термін постачання 14-30 дні (днів) |
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DMG2307L-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.76W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.134Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 2239 шт: термін постачання 14-30 дні (днів) |
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| ZXTP19100CZTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 142MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 4.46W
Pulsed collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 4.46W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Case: SOT89
Current gain: 20...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 142MHz
Manufacturer standard package: 1000pcs.
Power dissipation: 4.46W
Pulsed collector current: 3A
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| 1N4934-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.19 грн |
| 74+ | 5.67 грн |
| 82+ | 5.09 грн |
| 115+ | 3.64 грн |
| DDZ33ASF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 33V
Type of diode: Zener
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 33V; SMD; SOD323F; single diode; reel,tape
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 33V
Type of diode: Zener
Mounting: SMD
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| BZT52C18LP-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; X1-DFN1006-2; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: X1-DFN1006-2
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52C18Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| GBU1002 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Case: GBU
Kind of package: tube
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 10A
Type of bridge rectifier: single-phase
Max. forward impulse current: 220A
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 10A; Ifsm: 220A
Case: GBU
Kind of package: tube
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 200V
Electrical mounting: THT
Load current: 10A
Type of bridge rectifier: single-phase
Max. forward impulse current: 220A
Version: flat
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 132.09 грн |
| 10+ | 76.77 грн |
| 20+ | 71.76 грн |
| GBU1001 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| GBU1008 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| GBU10005 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| GBU1004 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| AL17050WT-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 20...400V DC
Output voltage: 3.4...20V DC
Output current: 60mA
Case: TSOT25
Mounting: SMD
Frequency: 70kHz
Topology: buck
Operating temperature: -40...105°C
Kind of package: reel; tape
Efficiency: 50%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 20÷400VDC; Uout: 3.4÷20VDC; 0.06A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 20...400V DC
Output voltage: 3.4...20V DC
Output current: 60mA
Case: TSOT25
Mounting: SMD
Frequency: 70kHz
Topology: buck
Operating temperature: -40...105°C
Kind of package: reel; tape
Efficiency: 50%
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| DESD2CAN2SOQ-7 |
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Виробник: DIODES INCORPORATED
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 10nA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Capacitance: 30pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 25.4V; bidirectional; SOT23; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 25.4V
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 10nA
Number of channels: 2
Application: automotive industry; CAN
Kind of package: reel; tape
Capacitance: 30pF
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| FMMT493TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
на замовлення 2901 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.94 грн |
| 25+ | 16.94 грн |
| 28+ | 15.44 грн |
| 100+ | 13.10 грн |
| 500+ | 10.51 грн |
| 1000+ | 9.35 грн |
| FMMT493QTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Current gain: 20...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Current gain: 20...300
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| FMMT493ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Current gain: 300...1200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Current gain: 300...1200
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| FMMT491ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
на замовлення 2722 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.94 грн |
| 21+ | 20.61 грн |
| 26+ | 16.27 грн |
| 50+ | 13.77 грн |
| 100+ | 11.77 грн |
| 500+ | 8.84 грн |
| 1000+ | 8.18 грн |
| 1500+ | 7.76 грн |
| FMMT491TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Current gain: 30...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Current gain: 30...300
на замовлення 2752 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.64 грн |
| 23+ | 18.69 грн |
| 50+ | 15.44 грн |
| 100+ | 14.02 грн |
| 500+ | 10.85 грн |
| 1000+ | 9.51 грн |
| FMMT497TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Frequency: 75MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 500mA; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.5W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Frequency: 75MHz
Manufacturer standard package: 3000pcs.
на замовлення 2404 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.13 грн |
| 14+ | 31.04 грн |
| 17+ | 25.12 грн |
| 25+ | 17.77 грн |
| 50+ | 13.60 грн |
| 100+ | 10.85 грн |
| 150+ | 9.85 грн |
| 500+ | 8.26 грн |
| 750+ | 7.93 грн |
| FMMT495TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
товару немає в наявності
В кошику
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| FMMT494TA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Pulsed collector current: 2A
Type of transistor: NPN
Current gain: 20...300
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Pulsed collector current: 2A
Type of transistor: NPN
Current gain: 20...300
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
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В кошику
од. на суму грн.
| FMMT491QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 100...300
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FMMT495TC |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Pulsed collector current: 2A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| FMMT495QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 10...300
Mounting: SMD
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Current gain: 10...300
Mounting: SMD
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| FMMT491AQTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Current gain: 35...900
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 2A
Application: automotive industry
Current gain: 35...900
товару немає в наявності
В кошику
од. на суму грн.
| FMMT491TC |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Pulsed collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Pulsed collector current: 2A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| FMMT494QTA |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| FMMT494TC |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Pulsed collector current: 2A
Type of transistor: NPN
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 1A; 500mW; SOT23
Mounting: SMD
Pulsed collector current: 2A
Type of transistor: NPN
Case: SOT23
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 120V
Power dissipation: 0.5W
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3055LFDB-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.2nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3055LFDB-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Gate charge: 11.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 25A; 870mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.87W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 25A
Gate charge: 11.2nC
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од. на суму грн.
| 74LVC14AS14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 1.65÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: inverter
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од. на суму грн.
| 74LVC14AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: inverter
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од. на суму грн.
| DXT2010P5-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 20A
Type of transistor: NPN
Current gain: 20...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 60V
Power dissipation: 3.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 20A
Type of transistor: NPN
Current gain: 20...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 60V
Power dissipation: 3.2W
Polarisation: bipolar
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.86 грн |
| DXT2011P5-13 |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: NPN
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: NPN
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
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од. на суму грн.
| DXT2011P5Q-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: NPN
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3.2W; PowerDI®5
Frequency: 130MHz
Mounting: SMD
Pulsed collector current: 10A
Application: automotive industry
Type of transistor: NPN
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 6A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
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од. на суму грн.
| DXT2012P5-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Frequency: 120MHz
Mounting: SMD
Pulsed collector current: 15A
Type of transistor: PNP
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 5.5A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 60V
Power dissipation: 3.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 3.2W; PowerDI®5
Frequency: 120MHz
Mounting: SMD
Pulsed collector current: 15A
Type of transistor: PNP
Current gain: 10...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 5.5A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 60V
Power dissipation: 3.2W
Polarisation: bipolar
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од. на суму грн.
| DXT2013P5-13 |
![]() |
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Frequency: 125MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 5A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3.2W; PowerDI®5
Frequency: 125MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 5A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 100V
Power dissipation: 3.2W
Polarisation: bipolar
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од. на суму грн.
| DMC4050SSDQ-13 |
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 2.14W
Gate charge: 37.56/33.66nC
Polarisation: unipolar
Drain current: 5.8/-5.8A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 2.14W
Gate charge: 37.56/33.66nC
Polarisation: unipolar
Drain current: 5.8/-5.8A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
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од. на суму грн.
| DMC4029SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.5/-9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.045Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.3W
Polarisation: unipolar
Drain current: 6.5/-9A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.024/0.045Ω
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| DMC4028SSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.5/-4.2A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.028/0.05Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 5.5/-4.2A
Kind of channel: enhancement
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.028/0.05Ω
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| DMC4028SSDQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; automotive industry
Mounting: SMD
Polarisation: unipolar
Application: automotive industry
Type of transistor: N/P-MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| DMN1150UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Mounting: SMD
Pulsed drain current: 7A
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 1.15A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 0.21Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW
Mounting: SMD
Pulsed drain current: 7A
Power dissipation: 0.3W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 1.15A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X1-DFN1006-3
On-state resistance: 0.21Ω
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Мінімальне замовлення: 10000 шт
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| DMN1150UFL3-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 1.4nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X2-DFN1310-6
On-state resistance: 0.21Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6
Mounting: SMD
Power dissipation: 0.9W
Gate charge: 1.4nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Case: X2-DFN1310-6
On-state resistance: 0.21Ω
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| DFLS2100-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 1µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®123; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: PowerDI®123
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Capacitance: 36pF
Max. forward voltage: 0.86V
Leakage current: 1µA
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMG9926UDM-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; Idm: 30A; 980mW; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Pulsed drain current: 30A
Power dissipation: 0.98W
Case: SOT26
Gate-source voltage: ±8V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMG9926USD-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.7A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| S1M-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; SMA; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
на замовлення 11413 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.58 грн |
| 48+ | 8.76 грн |
| 100+ | 4.71 грн |
| 500+ | 3.22 грн |
| 1000+ | 2.74 грн |
| 2500+ | 2.29 грн |
| 5000+ | 2.05 грн |
| 10000+ | 1.87 грн |
| ZXMS6006DT8TA |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; IntelliFET™; unipolar; 60V; 2.8A; 1.16W
Type of transistor: N-MOSFET x2
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 1.16W
Case: SM8
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; IntelliFET™; unipolar; 60V; 2.8A; 1.16W
Type of transistor: N-MOSFET x2
Technology: IntelliFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Power dissipation: 1.16W
Case: SM8
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
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| AP7176BMP-13 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7176B
Input voltage: 0.8...3.65V
Output current: 3A
Type of integrated circuit: voltage regulator
Voltage drop: 530mV
Operating temperature: -40...85°C
Output voltage: 0.8...3.12V
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
Tolerance: ±1.5%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7176B
Input voltage: 0.8...3.65V
Output current: 3A
Type of integrated circuit: voltage regulator
Voltage drop: 530mV
Operating temperature: -40...85°C
Output voltage: 0.8...3.12V
Kind of package: reel; tape
Case: MSOP8
Number of channels: 1
Tolerance: ±1.5%
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| AP7176BFN-7 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7176B
Input voltage: 0.8...3.65V
Output current: 3A
Type of integrated circuit: voltage regulator
Voltage drop: 530mV
Operating temperature: -40...85°C
Output voltage: 0.8...3.12V
Kind of package: reel; tape
Case: U-DFN3030-10
Number of channels: 1
Tolerance: ±1.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷3.12V; 3A; SMD
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: AP7176B
Input voltage: 0.8...3.65V
Output current: 3A
Type of integrated circuit: voltage regulator
Voltage drop: 530mV
Operating temperature: -40...85°C
Output voltage: 0.8...3.12V
Kind of package: reel; tape
Case: U-DFN3030-10
Number of channels: 1
Tolerance: ±1.5%
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 2N7002W-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; 0.2W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 150.07 грн |
| SMAJ26CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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| SMAJ26CAQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Application: automotive industry
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| 74LVC3G17SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SSOP8
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 3
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SSOP8
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of inputs: 3
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 74LVC3G04SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SSOP8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 3
Kind of integrated circuit: inverter
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Mounting: SMD
Case: SSOP8
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of inputs: 3
Kind of integrated circuit: inverter
Kind of output: push-pull
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 74LVC3G06SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 74LVC3G34SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: buffer
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer; Ch: 3; IN: 3; CMOS; SMD; SSOP8; -40÷150°C; LVC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: buffer
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| 74LVC3G07SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: buffer; inverter
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; LVC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: buffer; inverter
Number of channels: 3
Mounting: SMD
Supply voltage: 1.65...5.5V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| AP62800SJ-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷17VDC; Uout: 0.6÷7VDC; 8A; VQFN12
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...17V DC
Output voltage: 0.6...7V DC
Output current: 8A
Case: VQFN12
Mounting: SMD
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Frequency: 400kHz...1.2MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷17VDC; Uout: 0.6÷7VDC; 8A; VQFN12
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...17V DC
Output voltage: 0.6...7V DC
Output current: 8A
Case: VQFN12
Mounting: SMD
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Frequency: 400kHz...1.2MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMG4511SK4-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
Power dissipation: 1.54W
Polarisation: unipolar
Drain current: 7.8/-8.6A
Kind of channel: enhancement
Drain-source voltage: 35/-35V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 0.035/0.045Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 35/-35V
Mounting: SMD
Power dissipation: 1.54W
Polarisation: unipolar
Drain current: 7.8/-8.6A
Kind of channel: enhancement
Drain-source voltage: 35/-35V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 0.035/0.045Ω
на замовлення 2417 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.47 грн |
| 10+ | 49.06 грн |
| 100+ | 32.21 грн |
| 500+ | 25.37 грн |
| 1000+ | 24.03 грн |
| DMG2307L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.76W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.76W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.134Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 2239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.20 грн |
| 19+ | 22.64 грн |
| 50+ | 14.71 грн |
| 100+ | 12.17 грн |
| 310+ | 3.09 грн |
| 850+ | 2.92 грн |

























