Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73306) > Сторінка 1217 з 1222
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BZT52HC8V2WF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.83W; 8.2V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Zener voltage: 8.2V Power dissipation: 0.83W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52HC9V1WF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.83W; 9.1V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOD123F Kind of package: reel; tape Zener voltage: 9.1V Power dissipation: 0.83W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| P6SMAJ14ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.9V Max. forward impulse current: 25.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMAJ54ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...69V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMAJ60ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...76.7V Max. forward impulse current: 6.2A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMAJ64ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...81.8V Max. forward impulse current: 5.8A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMAJ85ADF-13 | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; D-FLAT Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...108.2V Max. forward impulse current: 4.4A Semiconductor structure: unidirectional Case: D-FLAT Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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ZXTP2012GTA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5.5A Power dissipation: 1.6W Case: SOT223 Pulsed collector current: 15A Current gain: 10...300 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Manufacturer standard package: 1000pcs. |
на замовлення 996 шт: термін постачання 14-30 дні (днів) |
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DMN2230UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.11Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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DMN2230UQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.23Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry Pulsed drain current: 7A Gate charge: 2.3nC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DDZ36BSF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 36V; SMD; SOD323F; reel,tape; single diode Mounting: SMD Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323F Zener voltage: 36V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDZ36S-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode Mounting: SMD Power dissipation: 0.2W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD323 Zener voltage: 36V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU404 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU4005 | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C30-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 30V Mounting: SMD Tolerance: ±6.5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 4466 шт: термін постачання 14-30 дні (днів) |
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BZT52C30S-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 30V Mounting: SMD Tolerance: ±7% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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BZT52C30Q-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 30V Mounting: SMD Tolerance: ±6.5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C30SQ-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 30V Mounting: SMD Tolerance: ±7% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SBR30200CTFP | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; ITO220AB; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 150A Case: ITO220AB Max. load current: 30A Reverse recovery time: 30ns Technology: SBR® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AP331AWRG-7 | DIODES INCORPORATED |
Category: SMD comparatorsDescription: IC: comparator; precision; Cmp: 1; SMT; SOT25R; reel,tape; 200nA Type of integrated circuit: comparator Kind of comparator: precision Number of comparators: 1 Mounting: SMT Case: SOT25R Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 200nA Voltage supply range: ± 1...18V DC; 2...36V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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B530C-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Capacitance: 0.3nF Max. forward voltage: 0.55V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 1637 шт: термін постачання 14-30 дні (днів) |
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| ZXT12N50DXTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 0.87W Case: MSOP8 Pulsed collector current: 10A Current gain: 50...900 Mounting: SMD Kind of package: reel; tape Frequency: 132MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DF1510S | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase Type of bridge rectifier: single-phase |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||
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74AHCT86T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHCT Kind of output: push-pull Kind of input: with Schmitt trigger |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| AL17051V33W5-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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DMP3056L-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3056L-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -20A Power dissipation: 1.38W Case: SOT23 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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DMP3056LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMP3056LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.9A Pulsed drain current: -25A Power dissipation: 1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN3042L-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 0.72W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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DMN3042L-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 30A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 48mΩ Mounting: SMD Gate charge: 20nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
| DMN3042LFDF-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| DMN3042LFDF-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 35A Power dissipation: 2.1W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 13.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SMCJ16AQ-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 57.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ18A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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DMP4051LK3Q-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -8.4A Power dissipation: 8.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FZT649TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 3A Power dissipation: 3W Case: SOT223 Pulsed collector current: 8A Mounting: SMD Frequency: 150...240MHz Manufacturer standard package: 1000pcs. Current gain: 15...300 Kind of package: reel; tape |
на замовлення 606 шт: термін постачання 14-30 дні (днів) |
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FZT491TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
на замовлення 901 шт: термін постачання 14-30 дні (днів) |
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FZT491ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 1A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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FZT655TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 30MHz Manufacturer standard package: 1000pcs. |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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FZT688BTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223 Polarisation: bipolar Mounting: SMD Manufacturer standard package: 1000pcs. Collector-emitter voltage: 12V Power dissipation: 3W Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 150MHz Collector current: 4A |
на замовлення 225 шт: термін постачання 14-30 дні (днів) |
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ZX5T851GTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Manufacturer standard package: 1000pcs. Current gain: 100...300 |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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FZT849TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 7A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 1000pcs. Current gain: 100...300 |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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FZT692BTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 70V Collector current: 2A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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FZT696BTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 0.5A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Manufacturer standard package: 1000pcs. |
на замовлення 756 шт: термін постачання 14-30 дні (днів) |
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| 74LVC3G14SS8-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 3 Kind of package: reel; tape Case: SSOP8 Family: LVC Kind of integrated circuit: inverter Number of channels: 3 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
|
AP63201WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 1.2...12V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 93% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| AP63201QWU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 1.2...12V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 93% Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| AS2333QS-13 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SO8; 8uV Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Number of channels: 1 Bandwidth: 350kHz Input offset voltage: 8µV Slew rate: 0.12V/μs Integrated circuit features: rail-to-rail Input bias current: 0.4nA Voltage supply range: 1.8...5.5V DC Quiescent current: 28µA Input offset current: 140pA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
ZXT13N15DE6TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 5A; 1.1W; SOT26 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 5A Power dissipation: 1.1W Case: SOT26 Pulsed collector current: 15A Mounting: SMD Frequency: 72MHz |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
AC817-40Q-7 | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.31W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Manufacturer standard package: 3000pcs. Pulsed collector current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DMPH6050SK3-13 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252 Mounting: SMD Pulsed drain current: -40A Power dissipation: 3.8W Gate charge: 25nC Polarisation: unipolar Drain current: -6A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: TO252 On-state resistance: 70mΩ |
на замовлення 2258 шт: термін постачання 14-30 дні (днів) |
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|
HD04-T | DIODES INCORPORATED |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 400V; If: 0.8A; Ifsm: 30A; MiniDIP Max. off-state voltage: 0.4kV Electrical mounting: SMT Load current: 0.8A Kind of package: reel; tape Case: MiniDIP Type of bridge rectifier: single-phase Max. forward impulse current: 30A |
на замовлення 1217 шт: термін постачання 14-30 дні (днів) |
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74LVC1G57DW-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; configurable,multiple-function; IN: 3; SMD; SOT363 Type of integrated circuit: digital Kind of gate: configurable; multiple-function Number of inputs: 3 Mounting: SMD Case: SOT363 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC Kind of output: push-pull |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1G57W6-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of inputs: 3 Technology: CMOS Mounting: SMD Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Number of channels: 1 Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G57FW4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1010-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Number of channels: 1 Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 74LVC1G57FZ4-7 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6 Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of inputs: 3 Technology: CMOS Mounting: SMD Case: X2-DFN1410-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: LVC Number of channels: 1 Kind of output: push-pull Kind of integrated circuit: buffer; inverter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
FCX493TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 1W Case: SOT89 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DMN61D8L-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 2.4Ω Power dissipation: 0.61W Gate charge: 740pC Polarisation: unipolar Drain current: 0.37A Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
DMN61D8LVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: TSOT26 On-state resistance: 2.4Ω Power dissipation: 1.09W Gate charge: 740pC Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| BZT52HC8V2WF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 8.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 8.2V
Power dissipation: 0.83W
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 8.2V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 8.2V
Power dissipation: 0.83W
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| BZT52HC9V1WF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
Category: SMD Zener diodes
Description: Diode: Zener; 0.83W; 9.1V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Zener voltage: 9.1V
Power dissipation: 0.83W
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| P6SMAJ14ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 15.6÷17.9V; 25.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.9V
Max. forward impulse current: 25.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| P6SMAJ54ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷69V; 6.9A; unidirectional; D-FLAT; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...69V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
од. на суму грн.
| P6SMAJ60ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷76.7V; 6.2A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...76.7V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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В кошику
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| P6SMAJ64ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷81.8V; 5.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...81.8V
Max. forward impulse current: 5.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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| P6SMAJ85ADF-13 |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷108.2V; 4.4A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...108.2V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ZXTP2012GTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5.5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5.5A
Power dissipation: 1.6W
Case: SOT223
Pulsed collector current: 15A
Current gain: 10...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Manufacturer standard package: 1000pcs.
на замовлення 996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.33 грн |
| 10+ | 56.55 грн |
| 100+ | 37.64 грн |
| 250+ | 33.16 грн |
| 500+ | 32.92 грн |
| DMN2230UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.07 грн |
| 15+ | 27.69 грн |
| 50+ | 19.07 грн |
| 100+ | 16.17 грн |
| DMN2230UQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 7A
Gate charge: 2.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 7A; 600mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.6W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 7A
Gate charge: 2.3nC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DDZ36BSF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD323F; reel,tape; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 36V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD323F; reel,tape; single diode
Mounting: SMD
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Zener voltage: 36V
Type of diode: Zener
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| DDZ36S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 36V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 36V; SMD; SOD323; reel,tape; single diode
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
Zener voltage: 36V
Type of diode: Zener
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| GBU404 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| GBU4005 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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| BZT52C30-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 4466 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.04 грн |
| 66+ | 6.30 грн |
| 79+ | 5.27 грн |
| 110+ | 3.78 грн |
| 500+ | 2.54 грн |
| 1000+ | 2.14 грн |
| 3000+ | 1.67 грн |
| BZT52C30S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.58 грн |
| BZT52C30Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 30V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±6.5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| BZT52C30SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| SBR30200CTFP |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 30A
Reverse recovery time: 30ns
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; ITO220AB; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 150A
Case: ITO220AB
Max. load current: 30A
Reverse recovery time: 30ns
Technology: SBR®
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| AP331AWRG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 1; SMT; SOT25R; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 1
Mounting: SMT
Case: SOT25R
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 1; SMT; SOT25R; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 1
Mounting: SMT
Case: SOT25R
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| B530C-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Capacitance: 0.3nF
Max. forward voltage: 0.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 1637 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.43 грн |
| 17+ | 25.29 грн |
| 100+ | 19.48 грн |
| 500+ | 16.67 грн |
| 1000+ | 15.17 грн |
| ZXT12N50DXTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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| DF1510S |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
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Мінімальне замовлення: 50 шт
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| 74AHCT86T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHCT
Kind of output: push-pull
Kind of input: with Schmitt trigger
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Мінімальне замовлення: 5 шт
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| AL17051V33W5-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DMP3056L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| DMP3056L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.4A; Idm: -20A; 1.38W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -20A
Power dissipation: 1.38W
Case: SOT23
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| DMP3056LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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| DMP3056LSSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.9A; Idm: -25A; 1W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.9A
Pulsed drain current: -25A
Power dissipation: 1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| DMN3042L-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 0.72W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 0.72W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.79 грн |
| 23+ | 18.32 грн |
| 50+ | 12.93 грн |
| DMN3042L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 30A; 1.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| DMN3042LFDF-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| DMN3042LFDF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 35A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 35A
Power dissipation: 2.1W
Case: U-DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 13.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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| SMCJ16AQ-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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| SMCJ18A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.86 грн |
| 12+ | 36.32 грн |
| 13+ | 33.41 грн |
| 100+ | 22.47 грн |
| DMP4051LK3Q-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
Power dissipation: 8.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -8.4A; 8.9W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.4A
Power dissipation: 8.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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| FZT649TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 8A
Mounting: SMD
Frequency: 150...240MHz
Manufacturer standard package: 1000pcs.
Current gain: 15...300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Pulsed collector current: 8A
Mounting: SMD
Frequency: 150...240MHz
Manufacturer standard package: 1000pcs.
Current gain: 15...300
Kind of package: reel; tape
на замовлення 606 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.72 грн |
| 12+ | 36.15 грн |
| 100+ | 23.46 грн |
| 500+ | 16.83 грн |
| FZT491TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 901 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.65 грн |
| 11+ | 37.81 грн |
| 50+ | 27.11 грн |
| 100+ | 24.21 грн |
| 250+ | 21.56 грн |
| FZT491ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 74.11 грн |
| 10+ | 42.87 грн |
| 100+ | 24.38 грн |
| FZT655TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 30MHz
Manufacturer standard package: 1000pcs.
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.68 грн |
| 10+ | 45.10 грн |
| FZT688BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 12V
Power dissipation: 3W
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 150MHz
Collector current: 4A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Mounting: SMD
Manufacturer standard package: 1000pcs.
Collector-emitter voltage: 12V
Power dissipation: 3W
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 150MHz
Collector current: 4A
на замовлення 225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.22 грн |
| 10+ | 42.45 грн |
| 100+ | 27.69 грн |
| ZX5T851GTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Manufacturer standard package: 1000pcs.
Current gain: 100...300
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.97 грн |
| 10+ | 53.23 грн |
| 100+ | 36.81 грн |
| FZT849TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 7A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 7A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Current gain: 100...300
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.65 грн |
| 10+ | 55.39 грн |
| FZT692BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.15 грн |
| 10+ | 50.08 грн |
| 100+ | 32.83 грн |
| FZT696BTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 180V; 500mA; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 180V
Collector current: 0.5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Manufacturer standard package: 1000pcs.
на замовлення 756 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 88.40 грн |
| 10+ | 52.90 грн |
| 100+ | 36.15 грн |
| 500+ | 29.02 грн |
| 74LVC3G14SS8-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 3
Mounting: SMD
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 3; IN: 3; CMOS; SMD; SSOP8; 1.65÷5.5VDC
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 3
Kind of package: reel; tape
Case: SSOP8
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 3
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AP63201WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
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В кошику
од. на суму грн.
| AP63201QWU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AS2333QS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SO8; 8uV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 350kHz
Input offset voltage: 8µV
Slew rate: 0.12V/μs
Integrated circuit features: rail-to-rail
Input bias current: 0.4nA
Voltage supply range: 1.8...5.5V DC
Quiescent current: 28µA
Input offset current: 140pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 1; 1.8÷5.5VDC; SO8; 8uV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 350kHz
Input offset voltage: 8µV
Slew rate: 0.12V/μs
Integrated circuit features: rail-to-rail
Input bias current: 0.4nA
Voltage supply range: 1.8...5.5V DC
Quiescent current: 28µA
Input offset current: 140pA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ZXT13N15DE6TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 5A; 1.1W; SOT26
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 5A
Power dissipation: 1.1W
Case: SOT26
Pulsed collector current: 15A
Mounting: SMD
Frequency: 72MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 5A; 1.1W; SOT26
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 5A
Power dissipation: 1.1W
Case: SOT26
Pulsed collector current: 15A
Mounting: SMD
Frequency: 72MHz
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| AC817-40Q-7 |
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 310mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.31W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Manufacturer standard package: 3000pcs.
Pulsed collector current: 1A
товару немає в наявності
В кошику
од. на суму грн.
| DMPH6050SK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 3.8W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 70mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 3.8W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Case: TO252
On-state resistance: 70mΩ
на замовлення 2258 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.25 грн |
| 7+ | 63.01 грн |
| 10+ | 54.72 грн |
| 50+ | 36.32 грн |
| 100+ | 30.84 грн |
| 250+ | 25.79 грн |
| 500+ | 23.55 грн |
| HD04-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.8A; Ifsm: 30A; MiniDIP
Max. off-state voltage: 0.4kV
Electrical mounting: SMT
Load current: 0.8A
Kind of package: reel; tape
Case: MiniDIP
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.8A; Ifsm: 30A; MiniDIP
Max. off-state voltage: 0.4kV
Electrical mounting: SMT
Load current: 0.8A
Kind of package: reel; tape
Case: MiniDIP
Type of bridge rectifier: single-phase
Max. forward impulse current: 30A
на замовлення 1217 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.39 грн |
| 16+ | 26.86 грн |
| 19+ | 22.47 грн |
| 100+ | 12.44 грн |
| 500+ | 9.29 грн |
| 1000+ | 8.54 грн |
| 74LVC1G57DW-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SOT363
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; SMD; SOT363
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SOT363
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Kind of output: push-pull
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 44+ | 9.12 грн |
| 74LVC1G57W6-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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од. на суму грн.
| 74LVC1G57FW4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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В кошику
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| 74LVC1G57FZ4-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
Category: Gates, inverters
Description: IC: digital; buffer,inverter; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: push-pull
Kind of integrated circuit: buffer; inverter
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| FCX493TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
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| DMN61D8L-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 2.4Ω
Power dissipation: 0.61W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.37A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 2.4Ω
Power dissipation: 0.61W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.37A
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN61D8LVT-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: TSOT26
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 500mA; 1.09W; TSOT26
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: TSOT26
On-state resistance: 2.4Ω
Power dissipation: 1.09W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.




























