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SMAJ13CA-13-F SMAJ13CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1996 шт:
термін постачання 21-30 дні (днів)
25+17.79 грн
30+13.87 грн
35+12.06 грн
43+9.66 грн
100+6.77 грн
250+5.53 грн
500+4.96 грн
1000+4.54 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ13A-13-F SMAJ13A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1383 шт:
термін постачання 21-30 дні (днів)
25+17.79 грн
29+14.37 грн
37+11.31 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ13AQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ5.0A-13-F SMCJ5.0A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 DIODES INCORPORATED 3.0SMCJxx.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PSMAJ400A-13 DIODES INCORPORATED PSMAJ400(C)A.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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SMAJ45A-13-F SMAJ45A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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P4SMAJ45ADF-13 DIODES INCORPORATED P4SMAJ5.0ADF-P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ11A-13-F SMAJ11A-13-F DIODES INCORPORATED SMAJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)
25+17.79 грн
31+13.71 грн
34+12.22 грн
40+10.41 грн
100+8.09 грн
500+6.11 грн
1000+5.45 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
DMP3008SFGQ-7 DMP3008SFGQ-7 DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Drain-source voltage: -30V
Gate-source voltage: ±20V
Drain current: -7.1A
Kind of channel: enhancement
On-state resistance: 25mΩ
Power dissipation: 0.9W
Application: automotive industry
Type of transistor: P-MOSFET
на замовлення 3241 шт:
термін постачання 21-30 дні (днів)
5+94.28 грн
10+61.03 грн
100+45.92 грн
500+37.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74AHC1G08SE-7
+1
 		74AHC1G08SE-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083479F93E24A18&compId=74AHC1G08.pdf?ci_sign=1a25f740889bc13d63a294564635e9ea9aee4f66 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 2÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
55+7.43 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
AP2162ASG-13 AP2162ASG-13 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SO8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP2162AFGEG-7 DIODES INCORPORATED AP2162A_72A.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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DMN2022UFDF-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8CF3B49C458BF&compId=DMN2022UFDF.pdf?ci_sign=1e90dc75cc769a3ddb5d31796de505dd9d7f0d57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP1022UFDF-7 DIODES INCORPORATED DMP1022UFDF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8.8A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 48.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ22CA-13-F SMBJ22CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
25+17.79 грн
31+13.71 грн
35+11.89 грн
100+7.27 грн
500+6.03 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMBJ22A-13-F SMBJ22A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ110CA-13-F SMAJ110CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA DIODES INCORPORATED ZXT12N50DX.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT689BTA FZT689BTA DIODES INCORPORATED FZT689B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
8+59.59 грн
9+47.90 грн
10+41.95 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT688BTA FZT688BTA DIODES INCORPORATED FZT688.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
7+72.93 грн
10+42.29 грн
100+27.58 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT692BTA FZT692BTA DIODES INCORPORATED FZT692B.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
6+76.49 грн
10+50.05 грн
50+38.49 грн
100+34.60 грн
250+30.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMG1013TQ-7 DMG1013TQ-7 DIODES INCORPORATED DMG1013TQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
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DMG1013UWQ-13 DMG1013UWQ-13 DIODES INCORPORATED DMG1013UWQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
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DMN2600UFB-7 DIODES INCORPORATED ds31983.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731UFB4-7B DIODES INCORPORATED DMN3731UFB4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 970mW
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731U-7 DMN3731U-7 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731U-13 DMN3731U-13 DIODES INCORPORATED DMN3731U.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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P4SMAJ6.0ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMP6050SSD-13 DMP6050SSD-13 DIODES INCORPORATED DMP6050SSD.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2826 шт:
термін постачання 21-30 дні (днів)
9+49.81 грн
12+36.75 грн
25+32.04 грн
100+26.18 грн
250+23.79 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DMPH6050SK3-13 DMPH6050SK3-13 DIODES INCORPORATED DMPH6050SK3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1853 шт:
термін постачання 21-30 дні (днів)
8+57.81 грн
11+38.73 грн
50+28.41 грн
100+25.11 грн
250+21.47 грн
500+19.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BZT52C3V3Q-7-F BZT52C3V3Q-7-F DIODES INCORPORATED BZT52Cxx_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C3V3TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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BCW68HTA BCW68HTA DIODES INCORPORATED BCW68H.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 5037 шт:
термін постачання 21-30 дні (днів)
24+18.68 грн
29+14.54 грн
33+12.80 грн
100+7.89 грн
500+5.81 грн
1000+5.19 грн
3000+4.72 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMCJ16A-13-F SMCJ16A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTA123YCA-7-F DIODES INCORPORATED ds30334.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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BAV23CQ-7-F BAV23CQ-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)
140+2.98 грн
500+2.64 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
BAV23C-7-F DIODES INCORPORATED BAV23A_C_S.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
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BSR33TA BSR33TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED88888A13B25ADAA18&compId=BSR33.pdf?ci_sign=a0f6be5332ddd4f9b6b5c3de4b66171be8d55955 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
16+29.35 грн
23+18.75 грн
100+13.05 грн
500+10.32 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP2120N-5.0TRG1 AP2120N-5.0TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.3TRG1 AP2120N-1.3TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.5TRG1 AP2120N-1.5TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-2.8TRG1 AP2120N-2.8TRG1 DIODES INCORPORATED AP2120.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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BAT54-7-F BAT54-7-F DIODES INCORPORATED BAT54_a_c_s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
на замовлення 12030 шт:
термін постачання 21-30 дні (днів)
72+6.23 грн
109+3.80 грн
165+2.51 грн
199+2.08 грн
500+1.43 грн
1000+1.23 грн
1500+1.13 грн
3000+1.07 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS70DW-04-7-F BAS70DW-04-7-F DIODES INCORPORATED BAS70TW_DW-04_DW-05_DW-06_BRW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)
27+16.90 грн
34+12.39 грн
39+10.65 грн
48+8.75 грн
100+6.69 грн
500+5.29 грн
1000+4.87 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SMAJ20A-13-F SMAJ20A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1725 шт:
термін постачання 21-30 дні (днів)
39+11.56 грн
46+9.08 грн
53+7.85 грн
100+4.68 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
P4SMAJ20ADF-13 DIODES INCORPORATED P4SMAJ50ADF_P4SMAJ85ADF.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G04SE-7 DIODES INCORPORATED 74AHC1G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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74AHC1G04W5-7 74AHC1G04W5-7 DIODES INCORPORATED 74AHC1G04.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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B230A-13-F B230A-13-F DIODES INCORPORATED B220_A-B260_A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 6764 шт:
термін постачання 21-30 дні (днів)
21+21.35 грн
30+13.96 грн
50+11.31 грн
100+10.24 грн
250+8.84 грн
500+7.76 грн
1000+6.77 грн
2000+5.86 грн
5000+4.54 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
B230-13-F B230-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 1898 шт:
термін постачання 21-30 дні (днів)
36+12.45 грн
43+9.75 грн
45+9.25 грн
100+8.09 грн
500+7.27 грн
1000+6.94 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SB3100-T SB3100-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9DDCD6A79DB8BF&compId=SB370_ser.pdf?ci_sign=cb2be17d7d152b4a7c9de02bddfb086a3de83047 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
14+32.91 грн
18+23.70 грн
20+22.38 грн
100+19.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
B250-13-F B250-13-F DIODES INCORPORATED B220A_B260A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 667 шт:
термін постачання 21-30 дні (днів)
18+24.90 грн
22+19.00 грн
25+17.10 грн
100+11.98 грн
500+9.17 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ90A-13-F SMBJ90A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ90CA-13-F SMBJ90CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G11W6-7 74LVC1G11W6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA36F96A0D3&compId=74LVC1G11.pdf?ci_sign=c04db8ea6e77c6643f015b752ac092f7f93b76cb Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11FW4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FC3FC8720D3&compId=74LVC1G11.pdf?ci_sign=08d55f95dd101d44cbae6ccaf4c51637e18eea7d Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11FZ4-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA36F95A0D3&compId=74LVC1G11.pdf?ci_sign=547283af2b0168b95237f9078e42c653734cfe2c Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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ZVN4206GTA ZVN4206GTA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB4B6ABDE598BF&compId=ZVN4206G.pdf?ci_sign=8cbd882be354acd53150db1ee932b60f4d5d8e14 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 970 шт:
термін постачання 21-30 дні (днів)
6+81.83 грн
10+51.37 грн
50+39.89 грн
100+35.84 грн
250+31.05 грн
500+27.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMAJ13CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ13CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.79 грн
30+13.87 грн
35+12.06 грн
43+9.66 грн
100+6.77 грн
250+5.53 грн
500+4.96 грн
1000+4.54 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ13A-13-F SMAJ_ser.pdf
SMAJ13A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1383 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.79 грн
29+14.37 грн
37+11.31 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMAJ13AQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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SMCJ5.0A-13-F SMCJ_ser.pdf
SMCJ5.0A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ5.0AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.07V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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3.0SMCJ5.0A-13 3.0SMCJxx.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.07V; 326.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 326.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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PSMAJ400A-13 PSMAJ400(C)A.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 380÷420V; 0.73A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 342V
Breakdown voltage: 380...420V
Max. forward impulse current: 0.73A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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SMAJ45A-13-F SMAJ_ser.pdf
SMAJ45A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
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P4SMAJ45ADF-13 P4SMAJ5.0ADF-P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMAJ11A-13-F SMAJ_ser.pdf
SMAJ11A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.79 грн
31+13.71 грн
34+12.22 грн
40+10.41 грн
100+8.09 грн
500+6.11 грн
1000+5.45 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Case: PowerDI®3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Drain-source voltage: -30V
Gate-source voltage: ±20V
Drain current: -7.1A
Kind of channel: enhancement
On-state resistance: 25mΩ
Power dissipation: 0.9W
Application: automotive industry
Type of transistor: P-MOSFET
на замовлення 3241 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.28 грн
10+61.03 грн
100+45.92 грн
500+37.25 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
74AHC1G08SE-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED88083479F93E24A18&compId=74AHC1G08.pdf?ci_sign=1a25f740889bc13d63a294564635e9ea9aee4f66
74AHC1G08SE-7
+1
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 2÷5.5VDC; -40÷125°C; AHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Family: AHC
Kind of output: push-pull
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.43 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
AP2162ASG-13 AP2162A_72A.pdf
AP2162ASG-13
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SO8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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AP2162AFGEG-7 AP2162A_72A.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1A; Ch: 2; P-Channel; SMD
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: U-DFN3030-8
On-state resistance: 85mΩ
Output current: 1A
Number of channels: 2
Supply voltage: 2.7...5.5V DC
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DMN2022UFDF-7 pVersion=0046&contRep=ZT&docId=005056AB82531EE986C8CF3B49C458BF&compId=DMN2022UFDF.pdf?ci_sign=1e90dc75cc769a3ddb5d31796de505dd9d7f0d57
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Power dissipation: 0.42W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
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DMP1022UFDF-7 DMP1022UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -8.8A; Idm: -90A; 1.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8.8A
Pulsed drain current: -90A
Power dissipation: 1.3W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 48.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMBJ22CA-13-F SMBJ_ser.pdf
SMBJ22CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.79 грн
31+13.71 грн
35+11.89 грн
100+7.27 грн
500+6.03 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMBJ22A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ22A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷28V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...28V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMAJ110CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ110CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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ZXT12N50DXTA ZXT12N50DX.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 3A; 0.87W; MSOP8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 0.87W
Case: MSOP8
Pulsed collector current: 10A
Current gain: 50...900
Mounting: SMD
Kind of package: reel; tape
Frequency: 132MHz
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FZT689BTA FZT689B.pdf
FZT689BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; 3W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 4A
Power dissipation: 3W
Collector-emitter voltage: 20V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.59 грн
9+47.90 грн
10+41.95 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT688BTA FZT688.pdf
FZT688BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 4A; 3W; SOT223
Polarisation: bipolar
Case: SOT223
Mounting: SMD
Type of transistor: NPN
Power dissipation: 3W
Collector current: 4A
Collector-emitter voltage: 12V
Quantity in set/package: 1000pcs.
Frequency: 150MHz
Kind of package: reel; tape
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+72.93 грн
10+42.29 грн
100+27.58 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FZT692BTA description FZT692B.pdf
FZT692BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 70V; 2A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 70V
Collector current: 2A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Quantity in set/package: 1000pcs.
на замовлення 288 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.49 грн
10+50.05 грн
50+38.49 грн
100+34.60 грн
250+30.06 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMG1013TQ-7 DMG1013TQ.pdf
DMG1013TQ-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -330mA; Idm: -6A; 270mW
Drain current: -0.33A
Gate charge: 580pC
Power dissipation: 0.27W
On-state resistance: 1.3Ω
Kind of package: 7 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
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DMG1013UWQ-13 DMG1013UWQ.pdf
DMG1013UWQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -540mA; Idm: -3A; 310mW
Drain current: -540mA
Gate charge: 622.4pC
Power dissipation: 0.31W
On-state resistance: 1.5Ω
Kind of package: 13 inch reel; tape
Gate-source voltage: ±6V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: SOT323
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -3A
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DMN2600UFB-7 ds31983.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 900mA; Idm: 3A; 540mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 0.54W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 0.85nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731UFB4-7B DMN3731UFB4.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 900mA; Idm: 3A; 970mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Pulsed drain current: 3A
Power dissipation: 970mW
Case: X2-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731U-7 DMN3731U.pdf
DMN3731U-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN3731U-13 DMN3731U.pdf
DMN3731U-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 700mA; Idm: 3A; 580mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.58W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.73Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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P4SMAJ6.0ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 0.4mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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DMP6050SSD-13 DMP6050SSD.pdf
DMP6050SSD-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.9A; Idm: -32A; 1.2W; SO8
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Case: SO8
Drain-source voltage: -60V
Pulsed drain current: -32A
Drain current: -3.9A
On-state resistance: 55mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 2826 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.81 грн
12+36.75 грн
25+32.04 грн
100+26.18 грн
250+23.79 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
DMPH6050SK3-13 DMPH6050SK3.pdf
DMPH6050SK3-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6A; Idm: -40A; 3.8W; TO252
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: TO252
Drain-source voltage: -60V
Pulsed drain current: -40A
Drain current: -6A
Gate charge: 25nC
On-state resistance: 70mΩ
Power dissipation: 3.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
на замовлення 1853 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.81 грн
11+38.73 грн
50+28.41 грн
100+25.11 грн
250+21.47 грн
500+19.90 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BZT52C3V3Q-7-F BZT52Cxx_ser.pdf
BZT52C3V3Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C3V3TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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BCW68HTA BCW68H.pdf
BCW68HTA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 1000pcs.
на замовлення 5037 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+18.68 грн
29+14.54 грн
33+12.80 грн
100+7.89 грн
500+5.81 грн
1000+5.19 грн
3000+4.72 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
SMCJ16A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE992F7F28DF16F58BF&compId=SMCJ_ser.pdf?ci_sign=6c44b425e13c0435b8873943a30233b4812f27ee
SMCJ16A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.8÷19.7V; 57.7A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 57.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DDTA123YCA-7-F ds30334.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Quantity in set/package: 3000pcs.
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BAV23CQ-7-F BAV23A_C_S.pdf
BAV23CQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
140+2.98 грн
500+2.64 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
BAV23C-7-F BAV23A_C_S.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 9A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 50ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. load current: 0.625A
Max. forward impulse current: 9A
Capacitance: 5pF
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BSR33TA pVersion=0046&contRep=ZT&docId=005056AB752F1ED88888A13B25ADAA18&compId=BSR33.pdf?ci_sign=a0f6be5332ddd4f9b6b5c3de4b66171be8d55955
BSR33TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.35 грн
23+18.75 грн
100+13.05 грн
500+10.32 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
AP2120N-5.0TRG1 AP2120.pdf
AP2120N-5.0TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.3TRG1 AP2120.pdf
AP2120N-1.3TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 1.3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-1.5TRG1 AP2120.pdf
AP2120N-1.5TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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AP2120N-2.8TRG1 AP2120.pdf
AP2120N-2.8TRG1
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Manufacturer series: AP2120
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
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BAT54-7-F BAT54_a_c_s.pdf
BAT54-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
на замовлення 12030 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+6.23 грн
109+3.80 грн
165+2.51 грн
199+2.08 грн
500+1.43 грн
1000+1.23 грн
1500+1.13 грн
3000+1.07 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
BAS70DW-04-7-F BAS70TW_DW-04_DW-05_DW-06_BRW.pdf
BAS70DW-04-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 70V; 70mA; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double x2
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 2pF
Max. forward impulse current: 0.1A
на замовлення 2120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.90 грн
34+12.39 грн
39+10.65 грн
48+8.75 грн
100+6.69 грн
500+5.29 грн
1000+4.87 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SMAJ20A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ20A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.56 грн
46+9.08 грн
53+7.85 грн
100+4.68 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
P4SMAJ20ADF-13 P4SMAJ50ADF_P4SMAJ85ADF.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; unidirectional; D-FLAT
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: D-FLAT
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74AHC1G04SE-7 74AHC1G04.pdf
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT353; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT353
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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74AHC1G04W5-7 74AHC1G04.pdf
74AHC1G04W5-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SOT25; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOT25
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: push-pull
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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B230A-13-F B220_A-B260_A.pdf
B230A-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 6764 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.35 грн
30+13.96 грн
50+11.31 грн
100+10.24 грн
250+8.84 грн
500+7.76 грн
1000+6.77 грн
2000+5.86 грн
5000+4.54 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
B230-13-F B220A_B260A.pdf
B230-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.5V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 1898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.45 грн
43+9.75 грн
45+9.25 грн
100+8.09 грн
500+7.27 грн
1000+6.94 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
SB3100-T pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9DDCD6A79DB8BF&compId=SB370_ser.pdf?ci_sign=cb2be17d7d152b4a7c9de02bddfb086a3de83047
SB3100-T
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.79V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+32.91 грн
18+23.70 грн
20+22.38 грн
100+19.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
B250-13-F B220A_B260A.pdf
B250-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Capacitance: 200pF
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 50A
на замовлення 667 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.90 грн
22+19.00 грн
25+17.10 грн
100+11.98 грн
500+9.17 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ90A-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ90A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ90CA-13-F pVersion=0046&contRep=ZT&docId=005056AB82531EE984EA5FB5364E18BF&compId=SMBJ_ser.pdf?ci_sign=55835a6fdb2405d779ddd1798e88e34b152b0524
SMBJ90CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷115.5V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...115.5V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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74LVC1G11W6-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA36F96A0D3&compId=74LVC1G11.pdf?ci_sign=c04db8ea6e77c6643f015b752ac092f7f93b76cb
74LVC1G11W6-7
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT26; 1.65÷5.5VDC; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOT26
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
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74LVC1G11FW4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FC3FC8720D3&compId=74LVC1G11.pdf?ci_sign=08d55f95dd101d44cbae6ccaf4c51637e18eea7d
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1010-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1010-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
товару немає в наявності
В кошику  од. на суму  грн.
74LVC1G11FZ4-7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E70FA36F95A0D3&compId=74LVC1G11.pdf?ci_sign=547283af2b0168b95237f9078e42c653734cfe2c
Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; X2-DFN1410-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: X2-DFN1410-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: LVC
Kind of output: push-pull
товару немає в наявності
В кошику  од. на суму  грн.
ZVN4206GTA pVersion=0046&contRep=ZT&docId=005056AB82531EE986CB4B6ABDE598BF&compId=ZVN4206G.pdf?ci_sign=8cbd882be354acd53150db1ee932b60f4d5d8e14
ZVN4206GTA
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1A; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.83 грн
10+51.37 грн
50+39.89 грн
100+35.84 грн
250+31.05 грн
500+27.83 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
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