Продукція > EPC SPACE, LLC > Всі товари виробника EPC SPACE, LLC (44) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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| CDA04N30X1C | EPC Space, LLC |
Description: GANFET 40V 30A .004 OHM 4DAPT Packaging: Tray |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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| CDA10N30X1C | EPC Space, LLC |
Description: GANFET 100V 30A .009 OHM 4DAPT Packaging: Tray |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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EPC7001BC | EPC Space, LLC |
 Description: GAN FET HEMT 40V30A COTS 4FSMD-BPackaging: Bulk |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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| EPC7001BSH | EPC Space, LLC |
Description: GAN FET HEMT 40V 30A 4FSMD-B Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| EPC7002AC | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A COTS 4FSMD-A Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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| EPC7002ASH | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Packaging: Bulk |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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| EPC7003AC | EPC Space, LLC |
Description: GAN FET HEMT 100V 5A COTS 4UB Current - Test: 10 A Voltage - Rated: 100 V Configuration: N-Channel Voltage - Test: 50 V Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 1.4mA Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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| EPC7003ASH | EPC Space, LLC |
Description: GAN FET HEMT 100V 10A.045OHM 4UB Voltage - Rated: 100 V Supplier Device Package: 4-SMD Current - Test: 10 A Voltage - Test: 50 V Technology: GaN HEMT Configuration: N-Channel Packaging: Bulk Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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EPC7004BC | EPC Space, LLC |
Description: GAN FET HEMT100V30A COTS 4FSMD-B Packaging: Tray Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V Configuration: N-Channel Voltage - Rated: 100 V Voltage - Test: 50 V Current - Test: 30 A |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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EPC7007BC | EPC Space, LLC |
Description: GAN FET HEMT200V18A COTS 4FSMD-B Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Configuration: N-Channel Voltage - Rated: 200 V Voltage - Test: 100 V Current - Test: 18 A |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| EPC7007BSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 18A 4UB Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 3mA Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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EPC7011L7C | EPC Space, LLC |
Description: IC GATE DRVR Packaging: Bulk |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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EPC7014UBC | EPC Space, LLC |
Description: GAN FET HEMT 60V 1A COTS 4UB Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 140µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +7V, -4V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V Packaging: Bulk |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
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| EPC7014UBSH | EPC Space, LLC |
Description: GAN FET HEMT 60V 1A 4UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 140µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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| EPC7018DC | EPC Space, LLC |
Description: MOSFET 2N-CH 100V 70A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 4-SMD |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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EPC7018GC | EPC Space, LLC |
Description: GAN FET HEMT 100V 90A COTS 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Configuration: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V Vgs(th) (Max) @ Id: 2.5V @ 12mA Supplier Device Package: 5-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Voltage - Rated: 100 V Voltage - Test: 50 V Current - Test: 40 A Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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EPC7018GSH | EPC Space, LLC |
Description: GAN FET HEMT 100V 90A 5UB Current - Test: 40 A Voltage - Test: 50 V Voltage - Rated: 100 V Supplier Device Package: 5-SMD Technology: GaN HEMT Configuration: N-Channel Mounting Type: Surface Mount Package / Case: 5-SMD, No Lead Packaging: Bulk |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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| EPC7019DC | EPC Space, LLC |
Description: GAN FET HEMT 40V 80A COTS 4UD Packaging: Bulk |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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EPC7019GC | EPC Space, LLC |
Description: GAN FET HEMT 40V 95A COTS 5UB Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: 5-SMD Vgs(th) (Max) @ Id: 2.5V @ 18mA Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-SMD, No Lead Packaging: Bulk Current - Test: 50 A Voltage - Test: 20 V Voltage - Rated: 40 V Configuration: N-Channel |
на замовлення 52 шт: термін постачання 21-31 дні (днів) |
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EPC7020GC | EPC Space, LLC |
Description: GAN FET HEMT 200V 80A COTS 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Configuration: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 5-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Voltage - Rated: 200 V Voltage - Test: 100 V Current - Test: 30 A Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V |
на замовлення 166 шт: термін постачання 21-31 дні (днів) |
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| EPC7020GSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 80A 5UB Packaging: Bulk Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 5-SMD Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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EPC7C001 | EPC Space, LLC |
Description: EVAL BOARD FOR FBG04N30 Packaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: FBG04N30 Supplied Contents: Board(s) Secondary Attributes: On-Board Test Points Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EPC7C002 | EPC Space, LLC |
Description: BD DEMO FBG10N30/GAM01P-C-PSE Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: FBG10N30 Supplied Contents: Board(s) Embedded: No Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EPC7C003 | EPC Space, LLC |
Description: EVAL BOARD FOR FBG20N18 Contents: Board(s) Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: FBG20N18 Type: Power Management Function: Gate Driver Packaging: Box Secondary Attributes: On-Board Test Points |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EPC7C005 | EPC Space, LLC |
Description: EVAL POL GAM02-PC50/GAM02A-P-C50 Embedded: No Supplied Contents: Board(s) Utilized IC / Part: FBS-GAM02 Type: Power Management Function: Gate Driver Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FBG04N08AC | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V Packaging: Bulk Configuration: N-Channel Voltage - Rated: 40 V Voltage - Test: 20 V Current - Test: 8 A |
на замовлення 136 шт: термін постачання 21-31 дні (днів) |
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FBG04N08ASH | EPC Space, LLC |
Description: GAN FET HEMT 40V 8A 4FSMD-A Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: 4-SMD Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V Configuration: N-Channel Voltage - Rated: 40 V Voltage - Test: 20 V Current - Test: 8 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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FBG04N30BC | EPC Space, LLC |
Description: GAN FET HEMT 40V30A COTS 4FSMD-B Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 9mA Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Current - Test: 30 A Voltage - Test: 20 V Voltage - Rated: 40 V Configuration: N-Channel |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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FBG04N30BSH | EPC Space, LLC |
Description: GAN FET HEMT 40V 30A 4FSMD-B Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Voltage - Rated: 40 V Voltage - Test: 20 V Current - Test: 30 A Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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FBG10N05AC | EPC Space, LLC |
Description: GAN FET HEMT 100V5A COTS 4FSMD-A Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Packaging: Bulk Current - Test: 5 A Voltage - Test: 50 V Voltage - Rated: 100 V Configuration: N-Channel Current Rating (Amps): 250µA |
на замовлення 193 шт: термін постачання 21-31 дні (днів) |
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FBG10N05ASH | EPC Space, LLC |
Description: GAN FET HEMT 100V 5A 4FSMD-A Packaging: Bulk Package / Case: 4-SMD, No Lead Current Rating (Amps): 250µA Mounting Type: Surface Mount Configuration: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.2mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Voltage - Rated: 100 V Voltage - Test: 50 V Current - Test: 5 A Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FBG10N30BC | EPC Space, LLC |
Description: GAN FET HEMT100V30A COTS 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Packaging: Bulk Configuration: N-Channel Voltage - Rated: 100 V Voltage - Test: 50 V Current - Test: 30 A |
на замовлення 123 шт: термін постачання 21-31 дні (днів) |
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FBG10N30BSH | EPC Space, LLC |
Description: GAN FET HEMT 100V 30A 4FSMD-B Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 5mA Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Current - Test: 30 A Voltage - Test: 50 V Voltage - Rated: 100 V Configuration: N-Channel Packaging: Bulk |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| FBG20N04AC | EPC Space, LLC |
Description: MOSFET 200V 4A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: 4-SMD Part Status: Active |
на замовлення 304 шт: термін постачання 21-31 дні (днів) |
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FBG20N04ASH | EPC Space, LLC |
Description: GAN FET HEMT 200V 4A 4FSMD-A Configuration: N-Channel Current - Test: 4 A Voltage - Test: 100 V Voltage - Rated: 200 V Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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FBG20N18BC | EPC Space, LLC |
Description: GAN FET HEMT200V18A COTS 4FSMD-B Current - Test: 18 A Voltage - Test: 100 V Voltage - Rated: 200 V Configuration: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Part Status: Active Supplier Device Package: 4-SMD Vgs(th) (Max) @ Id: 2.5V @ 3mA Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: GaN HEMT Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Packaging: Bulk |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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FBG20N18BSH | EPC Space, LLC |
Description: GAN FET HEMT 200V 18A 4FSMD-B Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Packaging: Bulk Configuration: N-Channel Voltage - Rated: 200 V Voltage - Test: 100 V Current - Test: 18 A |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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FBG30N04CC | EPC Space, LLC |
Description: GAN FET HEMT 300V4A COTS 4FSMD-C Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaN HEMT FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V Vgs(th) (Max) @ Id: 2.8V @ 600µA Supplier Device Package: 4-SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V Packaging: Bulk Configuration: N-Channel Voltage - Rated: 300 V Voltage - Test: 150 V Current - Test: 4 A |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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FBG30N04CSH | EPC Space, LLC |
Description: MOSFET 2N-CH 300V 4A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V Vgs(th) (Max) @ Id: 2.8V @ 600µA Supplier Device Package: 4-SMD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FBS-GAM02-P-C50 | EPC Space, LLC |
Description: 50V 10A HALF BRIDGE Voltage: 50 V Current: 10 A Configuration: 3 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 18-SMD Module Packaging: Bulk |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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FBS-GAM02P-C-PSE | EPC Space, LLC |
Description: DUAL HIGH & LOW SIDE DRIVER Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Configuration: 3 Phase Part Status: Active Voltage: 50 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| FBS-GAM02P-R-PSE | EPC Space, LLC |
Description: IC GATE DRVR HI/LOW SIDE 18SMD Packaging: Bulk Package / Case: 18-SMD Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 130°C (TJ) Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: Module Rise / Fall Time (Typ): 35ns, 22ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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FBS-GAM04-P-C100 | EPC Space, LLC |
Description: MOSFET IPM 100V 10A 18-SMD MOD Voltage: 100 V Current: 10 A Configuration: 3 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 18-SMD Module Packaging: Bulk |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FBS-GAM04-P-C50 | EPC Space, LLC |
Description: MOSFET IPM 50V 10A 18-SMD MOD Voltage: 50 V Current: 10 A Configuration: 3 Phase Type: MOSFET Mounting Type: Surface Mount Package / Case: 18-SMD Module Packaging: Bulk |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| CDA04N30X1C |
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11452.36 грн |
| 10+ | 9888.96 грн |
| CDA10N30X1C |
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11524.43 грн |
| 10+ | 10394.07 грн |
| 25+ | 10003.33 грн |
| EPC7001BC |
|
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19012.36 грн |
| 10+ | 18119.26 грн |
| EPC7001BSH |
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 30762.29 грн |
| EPC7002AC |
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19674.13 грн |
| 10+ | 18827.11 грн |
| EPC7002ASH |
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 28434.46 грн |
| EPC7003AC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 5A COTS 4UB
Current - Test: 10 A
Voltage - Rated: 100 V
Configuration: N-Channel
Voltage - Test: 50 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: GAN FET HEMT 100V 5A COTS 4UB
Current - Test: 10 A
Voltage - Rated: 100 V
Configuration: N-Channel
Voltage - Test: 50 V
Input Capacitance (Ciss) (Max) @ Vds: 168 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.4mA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18353.69 грн |
| EPC7003ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 10A.045OHM 4UB
Voltage - Rated: 100 V
Supplier Device Package: 4-SMD
Current - Test: 10 A
Voltage - Test: 50 V
Technology: GaN HEMT
Configuration: N-Channel
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Description: GAN FET HEMT 100V 10A.045OHM 4UB
Voltage - Rated: 100 V
Supplier Device Package: 4-SMD
Current - Test: 10 A
Voltage - Test: 50 V
Technology: GaN HEMT
Configuration: N-Channel
Packaging: Bulk
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 29872.69 грн |
| EPC7004BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Packaging: Tray
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 797 pF @ 50 V
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19012.36 грн |
| 10+ | 18119.26 грн |
| EPC7007BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19012.36 грн |
| 10+ | 18119.26 грн |
| EPC7007BSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4UB
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Description: GAN FET HEMT 200V 18A 4UB
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 29713.84 грн |
| EPC7011L7C |
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 44456.45 грн |
| EPC7014UBC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 60V 1A COTS 4UB
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Packaging: Bulk
Description: GAN FET HEMT 60V 1A COTS 4UB
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +7V, -4V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Packaging: Bulk
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12128.08 грн |
| 10+ | 10799.19 грн |
| EPC7014UBSH |
Виробник: EPC Space, LLC
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
Description: GAN FET HEMT 60V 1A 4UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 140µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 30 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20800.07 грн |
| 10+ | 19183.57 грн |
| EPC7018DC |
|
Виробник: EPC Space, LLC
Description: MOSFET 2N-CH 100V 70A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Description: MOSFET 2N-CH 100V 70A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20298.71 грн |
| 10+ | 19334.38 грн |
| EPC7018GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 40 A
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
Description: GAN FET HEMT 100V 90A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 40 A
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 50 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18597.01 грн |
| 10+ | 17673.85 грн |
| EPC7018GSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 90A 5UB
Current - Test: 40 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Supplier Device Package: 5-SMD
Technology: GaN HEMT
Configuration: N-Channel
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Description: GAN FET HEMT 100V 90A 5UB
Current - Test: 40 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Supplier Device Package: 5-SMD
Technology: GaN HEMT
Configuration: N-Channel
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27713.02 грн |
| EPC7019DC |
|
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21113.13 грн |
| 10+ | 20109.92 грн |
| EPC7019GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 95A COTS 5UB
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 5-SMD
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Current - Test: 50 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
Description: GAN FET HEMT 40V 95A COTS 5UB
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 5-SMD
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Bulk
Current - Test: 50 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18597.01 грн |
| 10+ | 17673.85 грн |
| EPC7020GC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 30 A
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
Description: GAN FET HEMT 200V 80A COTS 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 30 A
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 18647.38 грн |
| 10+ | 17771.90 грн |
| EPC7020GSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
Description: GAN FET HEMT 200V 80A 5UB
Packaging: Bulk
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 5-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1313 pF @ 100 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 29017.97 грн |
| EPC7C001 |
|
Виробник: EPC Space, LLC
Description: EVAL BOARD FOR FBG04N30
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR FBG04N30
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FBG04N30
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 113589.84 грн |
| EPC7C002 |
Виробник: EPC Space, LLC
Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Description: BD DEMO FBG10N30/GAM01P-C-PSE
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: FBG10N30
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 106655.97 грн |
| EPC7C003 |
|
Виробник: EPC Space, LLC
Description: EVAL BOARD FOR FBG20N18
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBG20N18
Type: Power Management
Function: Gate Driver
Packaging: Box
Secondary Attributes: On-Board Test Points
Description: EVAL BOARD FOR FBG20N18
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBG20N18
Type: Power Management
Function: Gate Driver
Packaging: Box
Secondary Attributes: On-Board Test Points
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 109896.63 грн |
| EPC7C005 |
Виробник: EPC Space, LLC
Description: EVAL POL GAM02-PC50/GAM02A-P-C50
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBS-GAM02
Type: Power Management
Function: Gate Driver
Packaging: Box
Description: EVAL POL GAM02-PC50/GAM02A-P-C50
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: FBS-GAM02
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 149318.51 грн |
| FBG04N08AC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
Description: GAN FET HEMT 40V 8A 4FSMD-A
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
на замовлення 136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16857.34 грн |
| FBG04N08ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
Description: GAN FET HEMT 40V 8A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: 4-SMD
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 20 V
Configuration: N-Channel
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 8 A
товару немає в наявності
В кошику
од. на суму грн.
| FBG04N30BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 30 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
Description: GAN FET HEMT 40V30A COTS 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 30 A
Voltage - Test: 20 V
Voltage - Rated: 40 V
Configuration: N-Channel
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16564.43 грн |
| FBG04N30BSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 30 A
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Description: GAN FET HEMT 40V 30A 4FSMD-B
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Voltage - Rated: 40 V
Voltage - Test: 20 V
Current - Test: 30 A
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27001.66 грн |
| FBG10N05AC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 5 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Current Rating (Amps): 250µA
Description: GAN FET HEMT 100V5A COTS 4FSMD-A
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Current - Test: 5 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Current Rating (Amps): 250µA
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17533.84 грн |
| 10+ | 16454.10 грн |
| FBG10N05ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 5A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Current Rating (Amps): 250µA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 5 A
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
Description: GAN FET HEMT 100V 5A 4FSMD-A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Current Rating (Amps): 250µA
Mounting Type: Surface Mount
Configuration: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 5 A
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 233 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 26123.69 грн |
| FBG10N30BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
Description: GAN FET HEMT100V30A COTS 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 100 V
Voltage - Test: 50 V
Current - Test: 30 A
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17501.29 грн |
| 10+ | 16472.08 грн |
| FBG10N30BSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 100V 30A 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Current - Test: 30 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Packaging: Bulk
Description: GAN FET HEMT 100V 30A 4FSMD-B
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Current - Test: 30 A
Voltage - Test: 50 V
Voltage - Rated: 100 V
Configuration: N-Channel
Packaging: Bulk
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 24138.37 грн |
| FBG20N04AC |
|
Виробник: EPC Space, LLC
Description: MOSFET 200V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
Description: MOSFET 200V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 100V
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: 4-SMD
Part Status: Active
на замовлення 304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17167.30 грн |
| FBG20N04ASH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 4A 4FSMD-A
Configuration: N-Channel
Current - Test: 4 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Description: GAN FET HEMT 200V 4A 4FSMD-A
Configuration: N-Channel
Current - Test: 4 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25479.74 грн |
| FBG20N18BC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Current - Test: 18 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Configuration: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Packaging: Bulk
Description: GAN FET HEMT200V18A COTS 4FSMD-B
Current - Test: 18 A
Voltage - Test: 100 V
Voltage - Rated: 200 V
Configuration: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Active
Supplier Device Package: 4-SMD
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaN HEMT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Packaging: Bulk
на замовлення 146 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17224.65 грн |
| 10+ | 16164.05 грн |
| FBG20N18BSH |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
Description: GAN FET HEMT 200V 18A 4FSMD-B
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 18 A
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25388.30 грн |
| FBG30N04CC |
|
Виробник: EPC Space, LLC
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 300 V
Voltage - Test: 150 V
Current - Test: 4 A
Description: GAN FET HEMT 300V4A COTS 4FSMD-C
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaN HEMT
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
Packaging: Bulk
Configuration: N-Channel
Voltage - Rated: 300 V
Voltage - Test: 150 V
Current - Test: 4 A
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 19755.50 грн |
| 10+ | 17551.54 грн |
| FBG30N04CSH |
|
Виробник: EPC Space, LLC
Description: MOSFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
Description: MOSFET 2N-CH 300V 4A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 150V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Supplier Device Package: 4-SMD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27322.47 грн |
| FBS-GAM02-P-C50 |
|
Виробник: EPC Space, LLC
Description: 50V 10A HALF BRIDGE
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
Description: 50V 10A HALF BRIDGE
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47174.83 грн |
| FBS-GAM02P-C-PSE |
Виробник: EPC Space, LLC
Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
Description: DUAL HIGH & LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Configuration: 3 Phase
Part Status: Active
Voltage: 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 49098.15 грн |
| FBS-GAM02P-R-PSE |
|
Виробник: EPC Space, LLC
Description: IC GATE DRVR HI/LOW SIDE 18SMD
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: Module
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Description: IC GATE DRVR HI/LOW SIDE 18SMD
Packaging: Bulk
Package / Case: 18-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 130°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Supplier Device Package: Module
Rise / Fall Time (Typ): 35ns, 22ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 52669.70 грн |
| 10+ | 48949.71 грн |
| FBS-GAM04-P-C100 |
|
Виробник: EPC Space, LLC
Description: MOSFET IPM 100V 10A 18-SMD MOD
Voltage: 100 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
Description: MOSFET IPM 100V 10A 18-SMD MOD
Voltage: 100 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 44810.59 грн |
| FBS-GAM04-P-C50 |
|
Виробник: EPC Space, LLC
Description: MOSFET IPM 50V 10A 18-SMD MOD
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
Description: MOSFET IPM 50V 10A 18-SMD MOD
Voltage: 50 V
Current: 10 A
Configuration: 3 Phase
Type: MOSFET
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Packaging: Bulk
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 44810.59 грн |