| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CEFGCJ1.8432 | HUAJING | 04+ |
на замовлення 1388 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
| CS19N40 A8H | Huajing | CS19N40 A8H CS19N40 Silicon N-Channel Power MOSFET 400V 19A TO-220AB Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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HFGM100D12V1 | HUAJING |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Topology: IGBT half-bridge Type of semiconductor module: IGBT Technology: PT Mechanical mounting: screw Pulsed collector current: 200A Application: for UPS; Inverter Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: V1 Gate-emitter voltage: ±30V |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 350A Mechanical mounting: screw Technology: PT |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Type of semiconductor module: IGBT Technology: PT Mechanical mounting: screw Pulsed collector current: 400A Application: for UPS; Inverter Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: V3 62MM Gate-emitter voltage: ±30V Collector current: 200A |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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HFGM300D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Mechanical mounting: screw Technology: PT |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| HFGM300D12V3 | Huajing | IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Силові IGBT-модулі |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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HFGM75D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: V1 Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Mechanical mounting: screw Technology: PT |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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HSKKD110/16 | HUAJING |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Case: 21MM Max. forward voltage: 1.42V Max. forward impulse current: 2.6kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 173A |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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HSKKD160/16 | HUAJING |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 160A Case: 34MM Max. forward voltage: 1.2V Max. forward impulse current: 6kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 251A |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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KP1100A 600V | HUAJING |
Category: Button thyristors Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk Type of thyristor: hockey-puck Mounting: Press-Pack Max. forward impulse current: 20kA Gate current: 200mA Max. off-state voltage: 0.6kV Body dimensions: Ø74.5/Ø47mm Load current: 1.1kA Max. load current: 1730A Kind of package: bulk |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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KP25A 1200V | HUAJING |
Category: Stud mounting thyristors Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Gate current: 90mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.2kV Load current: 25A Max. load current: 40A Kind of package: bulk Case: TO208AA Type of thyristor: stud Max. forward impulse current: 380A |
на замовлення 74 шт: термін постачання 14-30 дні (днів) |
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KP25A 1600V | HUAJING |
Category: Stud mounting thyristors Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Max. forward impulse current: 380A Gate current: 90mA Features of semiconductor devices: phase control thyristor (PCT) Max. off-state voltage: 1.6kV Load current: 25A Max. load current: 40A Kind of package: bulk Case: TO208AA Type of thyristor: stud Mounting: screw |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MFA200A 1600V | HUAJING |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 200A; 34MM; Ufmax: 1.2V; Ifsm: 7.2kA Mechanical mounting: screw Gate current: 180mA Threshold on-voltage: 0.8V Max. forward voltage: 1.2V Load current: 200A Max. off-state voltage: 1.6kV Max. forward impulse current: 7.2kA Case: 34MM Semiconductor structure: common anode; double Type of semiconductor module: diode-thyristor Electrical mounting: FASTON connectors; screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ST600C12C | HUAJING |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk Type of thyristor: hockey-puck Mounting: Press-Pack Max. forward impulse current: 9kA Gate current: 200mA Max. off-state voltage: 1.2kV Body dimensions: Ø42/Ø25mm Load current: 600A Max. load current: 942A Kind of package: bulk |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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ZB25A 1200V | HUAJING |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 25A; anode to stud; DO5; M5; screw type Type of diode: rectifying Max. off-state voltage: 1.2kV Load current: 25A Semiconductor structure: anode to stud Case: DO5 Fastening thread: M5 Mounting: screw type Max. forward voltage: 1.3V Max. load current: 40A Max. forward impulse current: 370A Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
на замовлення 256 шт: термін постачання 14-30 дні (днів) |
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ZB25A 1600V | HUAJING |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.6kV; 25A; anode to stud; DO5; M5; screw type Type of diode: rectifying Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: anode to stud Case: DO5 Fastening thread: M5 Mounting: screw type Max. forward voltage: 1.3V Max. load current: 40A Max. forward impulse current: 370A Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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ZB25AR 1200V | HUAJING |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type Type of diode: rectifying Max. off-state voltage: 1.2kV Load current: 25A Semiconductor structure: cathode to stud Case: DO5 Fastening thread: M5 Mounting: screw type Max. forward voltage: 1.3V Max. load current: 40A Max. forward impulse current: 370A Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
на замовлення 464 шт: термін постачання 14-30 дні (днів) |
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ZB25AR 1600V | HUAJING |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.6kV; 25A; cathode to stud; DO5; M5; screw type Type of diode: rectifying Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: cathode to stud Case: DO5 Fastening thread: M5 Mounting: screw type Max. forward voltage: 1.3V Max. load current: 40A Max. forward impulse current: 370A Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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ZP70AR 600V | HUAJING |
Category: Stud mounting universal diodes Description: Diode: rectifying; 600V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 95A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: M8x1,25 Mounting: screw type Max. forward voltage: 1.2V Max. load current: 150A Max. forward impulse current: 1kA Kind of package: bulk |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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| CEFGCJ1.8432 |
Виробник: HUAJING
04+
04+
на замовлення 1388 шт:
термін постачання 14-28 дні (днів)
| CS19N40 A8H |
Виробник: Huajing
CS19N40 A8H CS19N40 Silicon N-Channel Power MOSFET 400V 19A TO-220AB Транзистори
CS19N40 A8H CS19N40 Silicon N-Channel Power MOSFET 400V 19A TO-220AB Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| HFGM100D12V1 |
|
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Pulsed collector current: 200A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Pulsed collector current: 200A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4500.45 грн |
| 3+ | 3761.34 грн |
| 12+ | 3323.57 грн |
| HFGM150D12V3 |
|
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 350A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 350A
Mechanical mounting: screw
Technology: PT
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6798.09 грн |
| 3+ | 5678.50 грн |
| HFGM200D12V3 |
|
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Pulsed collector current: 400A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: PT
Mechanical mounting: screw
Pulsed collector current: 400A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: V3 62MM
Gate-emitter voltage: ±30V
Collector current: 200A
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7569.39 грн |
| HFGM300D12V3 |
|
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Mechanical mounting: screw
Technology: PT
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11117.91 грн |
| 3+ | 9344.23 грн |
| HFGM300D12V3 |
Виробник: Huajing
IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Силові IGBT-модулі
IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Силові IGBT-модулі
товару немає в наявності
В кошику
од. на суму грн.
| HFGM75D12V1 |
|
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3990.16 грн |
| 3+ | 3332.79 грн |
| HSKKD110/16 |
|
Виробник: HUAJING
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Case: 21MM
Max. forward voltage: 1.42V
Max. forward impulse current: 2.6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 173A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Case: 21MM
Max. forward voltage: 1.42V
Max. forward impulse current: 2.6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 173A
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1443.25 грн |
| 3+ | 1205.98 грн |
| 6+ | 1117.08 грн |
| HSKKD160/16 |
|
Виробник: HUAJING
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: 34MM
Max. forward voltage: 1.2V
Max. forward impulse current: 6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 251A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: 34MM
Max. forward voltage: 1.2V
Max. forward impulse current: 6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 251A
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2885.60 грн |
| 3+ | 2411.96 грн |
| 6+ | 2233.32 грн |
| KP1100A 600V |
|
Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Mounting: Press-Pack
Max. forward impulse current: 20kA
Gate current: 200mA
Max. off-state voltage: 0.6kV
Body dimensions: Ø74.5/Ø47mm
Load current: 1.1kA
Max. load current: 1730A
Kind of package: bulk
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Mounting: Press-Pack
Max. forward impulse current: 20kA
Gate current: 200mA
Max. off-state voltage: 0.6kV
Body dimensions: Ø74.5/Ø47mm
Load current: 1.1kA
Max. load current: 1730A
Kind of package: bulk
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9337.78 грн |
| KP25A 1200V |
|
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Gate current: 90mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Case: TO208AA
Type of thyristor: stud
Max. forward impulse current: 380A
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Gate current: 90mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.2kV
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Case: TO208AA
Type of thyristor: stud
Max. forward impulse current: 380A
на замовлення 74 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 461.52 грн |
| 5+ | 385.78 грн |
| 25+ | 341.33 грн |
| KP25A 1600V |
|
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Max. forward impulse current: 380A
Gate current: 90mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Case: TO208AA
Type of thyristor: stud
Mounting: screw
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Max. forward impulse current: 380A
Gate current: 90mA
Features of semiconductor devices: phase control thyristor (PCT)
Max. off-state voltage: 1.6kV
Load current: 25A
Max. load current: 40A
Kind of package: bulk
Case: TO208AA
Type of thyristor: stud
Mounting: screw
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.00 грн |
| 5+ | 381.59 грн |
| MFA200A 1600V |
|
Виробник: HUAJING
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 200A; 34MM; Ufmax: 1.2V; Ifsm: 7.2kA
Mechanical mounting: screw
Gate current: 180mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 200A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 7.2kA
Case: 34MM
Semiconductor structure: common anode; double
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 200A; 34MM; Ufmax: 1.2V; Ifsm: 7.2kA
Mechanical mounting: screw
Gate current: 180mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.2V
Load current: 200A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 7.2kA
Case: 34MM
Semiconductor structure: common anode; double
Type of semiconductor module: diode-thyristor
Electrical mounting: FASTON connectors; screw
товару немає в наявності
В кошику
од. на суму грн.
| ST600C12C |
|
Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Mounting: Press-Pack
Max. forward impulse current: 9kA
Gate current: 200mA
Max. off-state voltage: 1.2kV
Body dimensions: Ø42/Ø25mm
Load current: 600A
Max. load current: 942A
Kind of package: bulk
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Mounting: Press-Pack
Max. forward impulse current: 9kA
Gate current: 200mA
Max. off-state voltage: 1.2kV
Body dimensions: Ø42/Ø25mm
Load current: 600A
Max. load current: 942A
Kind of package: bulk
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4633.22 грн |
| ZB25A 1200V |
|
Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; anode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: anode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; anode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: anode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
на замовлення 256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 170.70 грн |
| 5+ | 142.57 грн |
| 25+ | 125.80 грн |
| 100+ | 114.06 грн |
| ZB25A 1600V |
|
Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.6kV; 25A; anode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: anode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.6kV; 25A; anode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: anode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.76 грн |
| 5+ | 135.02 грн |
| 25+ | 119.09 грн |
| 100+ | 107.35 грн |
| ZB25AR 1200V |
|
Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
на замовлення 464 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.76 грн |
| 5+ | 135.02 грн |
| 25+ | 119.09 грн |
| 100+ | 107.35 грн |
| ZB25AR 1600V |
|
Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.6kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.6kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 160.76 грн |
| 5+ | 135.02 грн |
| 25+ | 119.09 грн |
| ZP70AR 600V |
|
Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 95A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 600V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 95A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 389.26 грн |
| 5+ | 325.40 грн |
| 25+ | 287.66 грн |