Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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---|---|---|---|---|---|---|---|---|---|---|---|
CD5668CB | HUAJING | 09+ HSOP32 |
на замовлення 2650 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CD9088CB | HUAJING | 01+ SOP16 |
на замовлення 49 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CEFGCJ1.8432 | HUAJING | 04+ |
на замовлення 1388 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CEFGCJ1.8432 | HUAJING | 0515 |
на замовлення 89 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
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HFGM100D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: V1 Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Mechanical mounting: screw Technology: PT |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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HFGM100D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: V1 Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Mechanical mounting: screw Technology: PT кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 150A Pulsed collector current: 350A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 150A Pulsed collector current: 350A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 200A Pulsed collector current: 400A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Technology: PT Mechanical mounting: screw |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Technology: PT Mechanical mounting: screw кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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HFGM75D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 75A Pulsed collector current: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V1 |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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HFGM75D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 75A Pulsed collector current: 200A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V1 кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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KP1100A 600V | HUAJING | KP1100A06V-HUA Button thyristors |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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KP50A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 72A Load current: 50A Gate current: 150mA Case: TO208AC Mounting: screw Kind of package: bulk Max. forward impulse current: 0.9kA Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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KP50A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 72A Load current: 50A Gate current: 150mA Case: TO208AC Mounting: screw Kind of package: bulk Max. forward impulse current: 0.9kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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ST600C12C | HUAJING | ST600C12C-HUA Button thyristors |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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CD5668CB |
Виробник: HUAJING
09+ HSOP32
09+ HSOP32
на замовлення 2650 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CD9088CB |
Виробник: HUAJING
01+ SOP16
01+ SOP16
на замовлення 49 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
04+
04+
на замовлення 1388 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
0515
0515
на замовлення 89 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
HFGM100D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2788.63 грн |
HFGM100D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 3346.36 грн |
HFGM150D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4374.83 грн |
HFGM150D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5249.80 грн |
HFGM200D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4593.53 грн |
HFGM200D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 200A
Pulsed collector current: 400A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5512.24 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Technology: PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Technology: PT
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6866.36 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Technology: PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Technology: PT
Mechanical mounting: screw
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 8239.64 грн |
HFGM75D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2406.53 грн |
HFGM75D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 75A
Pulsed collector current: 200A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V1
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 2887.83 грн |
KP1100A 600V |
Виробник: HUAJING
KP1100A06V-HUA Button thyristors
KP1100A06V-HUA Button thyristors
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 8929.34 грн |
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 432.45 грн |
3+ | 312.66 грн |
8+ | 295.04 грн |
KP25A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 448.95 грн |
3+ | 322.63 грн |
8+ | 305.00 грн |
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 518.94 грн |
3+ | 389.63 грн |
8+ | 354.05 грн |
KP25A 1600V |
![]() |
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 538.75 грн |
3+ | 402.04 грн |
8+ | 366.00 грн |
KP50A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 919.37 грн |
2+ | 661.35 грн |
4+ | 625.33 грн |
KP50A 1600V |
![]() |
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1103.24 грн |
2+ | 824.14 грн |
4+ | 750.40 грн |