| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| CEFGCJ1.8432 | HUAJING | 04+ |
на замовлення 1388 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
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HFGM100D12V1 | HUAJING |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Application: for UPS; Inverter Type of semiconductor module: IGBT Topology: IGBT half-bridge Technology: PT Semiconductor structure: transistor/transistor Case: V1 Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 150A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 350A Mechanical mounting: screw Technology: PT |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 400A Mechanical mounting: screw Technology: PT |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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HFGM300D12V3 | HUAJING |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: V3 62MM Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 600A Mechanical mounting: screw Technology: PT |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| HFGM300D12V3 | Huajing | IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Група товару: Силові IGBT-модулі Од. вим: шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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HFGM75D12V1 | HUAJING |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 75A Case: V1 Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±30V Pulsed collector current: 200A Mechanical mounting: screw Technology: PT |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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HSKKD110/16 | HUAJING |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 110A Case: 21MM Max. forward voltage: 1.42V Max. forward impulse current: 2.6kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 173A |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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HSKKD160/16 | HUAJING |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 160A Case: 34MM Max. forward voltage: 1.2V Max. forward impulse current: 6kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 251A |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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KP1100A 600V | HUAJING |
Category: Button thyristorsDescription: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk Body dimensions: Ø74.5/Ø47mm Mounting: Press-Pack Type of thyristor: hockey-puck Gate current: 200mA Max. off-state voltage: 0.6kV Load current: 1.1kA Max. load current: 1730A Max. forward impulse current: 20kA Kind of package: bulk |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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KP25A 1600V | HUAJING |
Category: Stud mounting thyristorsDescription: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Max. forward impulse current: 380A Features of semiconductor devices: phase control thyristor (PCT) Kind of package: bulk |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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ST600C12C | HUAJING |
Category: Button thyristorsDescription: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk Mounting: Press-Pack Body dimensions: Ø42/Ø25mm Gate current: 200mA Load current: 600A Max. off-state voltage: 1.2kV Max. forward impulse current: 9kA Max. load current: 942A Kind of package: bulk Type of thyristor: hockey-puck |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| CEFGCJ1.8432 |
Виробник: HUAJING
04+
04+
на замовлення 1388 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
| HFGM100D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Case: V1
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
на замовлення 16 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4365.45 грн |
| 3+ | 3648.18 грн |
| 12+ | 3224.23 грн |
| HFGM150D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 350A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 350A
Mechanical mounting: screw
Technology: PT
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6729.80 грн |
| 3+ | 5621.58 грн |
| HFGM200D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 400A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 400A
Mechanical mounting: screw
Technology: PT
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7455.41 грн |
| 3+ | 6236.48 грн |
| HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: V3 62MM
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Mechanical mounting: screw
Technology: PT
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11008.28 грн |
| 3+ | 9251.26 грн |
| HFGM300D12V3 |
Виробник: Huajing
IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Група товару: Силові IGBT-модулі Од. вим: шт
IGBT Half Bridge, 1200V, 300A (аналог FF300R12KS4) Група товару: Силові IGBT-модулі Од. вим: шт
товару немає в наявності
В кошику
од. на суму грн.
| HFGM75D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: V1
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mechanical mounting: screw
Technology: PT
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3949.65 грн |
| 3+ | 3299.09 грн |
| HSKKD110/16 |
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Виробник: HUAJING
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Case: 21MM
Max. forward voltage: 1.42V
Max. forward impulse current: 2.6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 173A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 110A; 21MM; Ufmax: 1.42V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Case: 21MM
Max. forward voltage: 1.42V
Max. forward impulse current: 2.6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 173A
на замовлення 31 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1429.48 грн |
| 3+ | 1194.47 грн |
| 6+ | 1106.15 грн |
| HSKKD160/16 |
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Виробник: HUAJING
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: 34MM
Max. forward voltage: 1.2V
Max. forward impulse current: 6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 251A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 160A; 34MM; Ufmax: 1.2V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 160A
Case: 34MM
Max. forward voltage: 1.2V
Max. forward impulse current: 6kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 251A
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2858.06 грн |
| 3+ | 2388.10 грн |
| 6+ | 2211.45 грн |
| KP1100A 600V |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Body dimensions: Ø74.5/Ø47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Gate current: 200mA
Max. off-state voltage: 0.6kV
Load current: 1.1kA
Max. load current: 1730A
Max. forward impulse current: 20kA
Kind of package: bulk
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Body dimensions: Ø74.5/Ø47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Gate current: 200mA
Max. off-state voltage: 0.6kV
Load current: 1.1kA
Max. load current: 1730A
Max. forward impulse current: 20kA
Kind of package: bulk
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9126.76 грн |
| KP25A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Max. forward impulse current: 380A
Features of semiconductor devices: phase control thyristor (PCT)
Kind of package: bulk
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Max. forward impulse current: 380A
Features of semiconductor devices: phase control thyristor (PCT)
Kind of package: bulk
на замовлення 29 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 452.04 грн |
| 5+ | 377.69 грн |
| 25+ | 333.95 грн |
| ST600C12C |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Mounting: Press-Pack
Body dimensions: Ø42/Ø25mm
Gate current: 200mA
Load current: 600A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9kA
Max. load current: 942A
Kind of package: bulk
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Mounting: Press-Pack
Body dimensions: Ø42/Ø25mm
Gate current: 200mA
Load current: 600A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9kA
Max. load current: 942A
Kind of package: bulk
Type of thyristor: hockey-puck
на замовлення 10 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4526.69 грн |










