Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CD5668CB | HUAJING | 09+ HSOP32 |
на замовлення 2650 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
CD9088CB | HUAJING | 01+ SOP16 |
на замовлення 49 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
CEFGCJ1.8432 | HUAJING | 04+ |
на замовлення 1388 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
CEFGCJ1.8432 | HUAJING | 0515 |
на замовлення 89 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||||
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HFGM100D12V1 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Application: for UPS; Inverter Type of semiconductor module: IGBT Topology: IGBT half-bridge Technology: PT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Case: V1 |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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HFGM100D12V1 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Application: for UPS; Inverter Type of semiconductor module: IGBT Topology: IGBT half-bridge Technology: PT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Case: V1 кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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HFGM150D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 150A Pulsed collector current: 350A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM150D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±30V Collector current: 150A Pulsed collector current: 350A Application: for UPS; Inverter Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: PT Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: V3 62MM кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM200D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 200A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM200D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 200A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 300A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 300A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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HFGM75D12V1 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 75A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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HFGM75D12V1 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 75A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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KP1100A 600V | HUAJING |
![]() Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk Type of thyristor: hockey-puck Max. off-state voltage: 0.6kV Max. load current: 1730A Load current: 1.1kA Gate current: 200mA Case: Ø74,5/47mm Mounting: Press-Pack Kind of package: bulk Max. forward impulse current: 20kA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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KP1100A 600V | HUAJING |
![]() Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk Type of thyristor: hockey-puck Max. off-state voltage: 0.6kV Max. load current: 1730A Load current: 1.1kA Gate current: 200mA Case: Ø74,5/47mm Mounting: Press-Pack Kind of package: bulk Max. forward impulse current: 20kA кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA кількість в упаковці: 1 шт |
на замовлення 37 шт: термін постачання 14-21 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
KP50A 1600V | HUAJING | KP50A16V-HUA Stud mounting thyristors |
на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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ST600C12C | HUAJING |
![]() Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk Type of thyristor: hockey-puck Max. off-state voltage: 1.2kV Max. load current: 942A Load current: 600A Gate current: 200mA Case: Ø42/25mm Mounting: Press-Pack Kind of package: bulk Max. forward impulse current: 9kA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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ST600C12C | HUAJING |
![]() Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk Type of thyristor: hockey-puck Max. off-state voltage: 1.2kV Max. load current: 942A Load current: 600A Gate current: 200mA Case: Ø42/25mm Mounting: Press-Pack Kind of package: bulk Max. forward impulse current: 9kA кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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ZB25AR 1200V | HUAJING |
![]() Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type Type of diode: rectifying Max. off-state voltage: 1.2kV Load current: 25A Semiconductor structure: cathode to stud Case: DO5 Fastening thread: M5 Mounting: screw type Max. forward voltage: 1.3V Max. load current: 40A Max. forward impulse current: 370A Features of semiconductor devices: avalanche breakdown effect Kind of package: bulk |
на замовлення 283 шт: термін постачання 21-30 дні (днів) |
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ZP70A 800V | HUAJING |
![]() Description: Diode: rectifying; 800V; 95A; cathode to stud; DO203AB; M8x1,25 Type of diode: rectifying Max. off-state voltage: 0.8kV Load current: 95A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: M8x1,25 Mounting: screw type Max. forward voltage: 1.2V Max. load current: 150A Max. forward impulse current: 1kA Kind of package: bulk |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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ZP70AR 800V | HUAJING |
![]() Description: Diode: rectifying; 800V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V Type of diode: rectifying Max. off-state voltage: 0.8kV Load current: 95A Semiconductor structure: anode to stud Case: DO203AB Fastening thread: M8x1,25 Mounting: screw type Max. forward voltage: 1.2V Max. load current: 150A Max. forward impulse current: 1kA Kind of package: bulk |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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CD5668CB |
Виробник: HUAJING
09+ HSOP32
09+ HSOP32
на замовлення 2650 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CD9088CB |
Виробник: HUAJING
01+ SOP16
01+ SOP16
на замовлення 49 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
04+
04+
на замовлення 1388 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
0515
0515
на замовлення 89 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
HFGM100D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2838.29 грн |
HFGM100D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Technology: PT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: V1
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 3405.94 грн |
HFGM150D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4475.73 грн |
HFGM150D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±30V
Collector current: 150A
Pulsed collector current: 350A
Application: for UPS; Inverter
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: PT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: V3 62MM
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5370.87 грн |
HFGM200D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4696.14 грн |
HFGM200D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5635.36 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 7031.96 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 8438.35 грн |
HFGM75D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2459.96 грн |
HFGM75D12V1 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 2951.95 грн |
KP1100A 600V |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 0.6kV
Max. load current: 1730A
Load current: 1.1kA
Gate current: 200mA
Case: Ø74,5/47mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 20kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 0.6kV
Max. load current: 1730A
Load current: 1.1kA
Gate current: 200mA
Case: Ø74,5/47mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 20kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 8198.18 грн |
KP1100A 600V |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 0.6kV
Max. load current: 1730A
Load current: 1.1kA
Gate current: 200mA
Case: Ø74,5/47mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 20kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 600V; Ifmax: 1730A; 1100A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 0.6kV
Max. load current: 1730A
Load current: 1.1kA
Gate current: 200mA
Case: Ø74,5/47mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 20kA
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 9837.82 грн |
3+ | 8949.99 грн |
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 430.68 грн |
3+ | 319.94 грн |
8+ | 302.68 грн |
KP25A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
товару немає в наявності
В кошику
од. на суму грн.
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
на замовлення 37 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 516.82 грн |
3+ | 398.69 грн |
8+ | 363.22 грн |
KP25A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
KP50A 1600V |
Виробник: HUAJING
KP50A16V-HUA Stud mounting thyristors
KP50A16V-HUA Stud mounting thyristors
на замовлення 3 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1295.09 грн |
2+ | 876.06 грн |
4+ | 828.07 грн |
ST600C12C |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 942A
Load current: 600A
Gate current: 200mA
Case: Ø42/25mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 9kA
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 942A
Load current: 600A
Gate current: 200mA
Case: Ø42/25mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 9kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4184.38 грн |
ST600C12C |
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Виробник: HUAJING
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 942A
Load current: 600A
Gate current: 200mA
Case: Ø42/25mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 9kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 942A; 600A; Igt: 200mA; bulk
Type of thyristor: hockey-puck
Max. off-state voltage: 1.2kV
Max. load current: 942A
Load current: 600A
Gate current: 200mA
Case: Ø42/25mm
Mounting: Press-Pack
Kind of package: bulk
Max. forward impulse current: 9kA
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5021.26 грн |
3+ | 4729.55 грн |
ZB25AR 1200V |
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Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 25A; cathode to stud; DO5; M5; screw type
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Load current: 25A
Semiconductor structure: cathode to stud
Case: DO5
Fastening thread: M5
Mounting: screw type
Max. forward voltage: 1.3V
Max. load current: 40A
Max. forward impulse current: 370A
Features of semiconductor devices: avalanche breakdown effect
Kind of package: bulk
на замовлення 283 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.41 грн |
5+ | 120.76 грн |
10+ | 101.94 грн |
25+ | 95.67 грн |
ZP70A 800V |
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Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 95A; cathode to stud; DO203AB; M8x1,25
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 95A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 95A; cathode to stud; DO203AB; M8x1,25
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 95A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 339.48 грн |
3+ | 283.86 грн |
4+ | 265.05 грн |
10+ | 250.15 грн |
ZP70AR 800V |
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Виробник: HUAJING
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 95A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 95A; anode to stud; DO203AB; M8x1,25; 1.2V
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Load current: 95A
Semiconductor structure: anode to stud
Case: DO203AB
Fastening thread: M8x1,25
Mounting: screw type
Max. forward voltage: 1.2V
Max. load current: 150A
Max. forward impulse current: 1kA
Kind of package: bulk
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 333.57 грн |
3+ | 279.16 грн |
4+ | 264.26 грн |
10+ | 247.01 грн |