Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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---|---|---|---|---|---|---|---|---|---|---|---|
CD5668CB | HUAJING | 09+ HSOP32 |
на замовлення 2650 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CD9088CB | HUAJING | 01+ SOP16 |
на замовлення 49 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CEFGCJ1.8432 | HUAJING | 04+ |
на замовлення 1388 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
CEFGCJ1.8432 | HUAJING | 0515 |
на замовлення 89 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. | |||||||
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HFGM100D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 100A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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HFGM100D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 100A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 350A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 150A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM150D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 350A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 150A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 200A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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HFGM200D12V3 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 200A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 300A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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HFGM300D12V3 | HUAJING |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 300A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V3 62MM Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 7 шт: термін постачання 14-21 дні (днів) |
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HFGM75D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 75A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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HFGM75D12V1 | HUAJING |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1 Topology: IGBT half-bridge Application: for UPS; Inverter Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Collector current: 75A Gate-emitter voltage: ±30V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Technology: PT Case: V1 Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
на замовлення 12 шт: термін постачання 14-21 дні (днів) |
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KP1100A 600V | HUAJING | KP1100A06V-HUA Button thyristors |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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KP25A 1200V | HUAJING |
![]() Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Type of thyristor: stud Max. off-state voltage: 1.2kV Max. load current: 40A Load current: 25A Gate current: 90mA Case: TO208AA Mounting: screw Kind of package: bulk Max. forward impulse current: 380A Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
на замовлення 41 шт: термін постачання 14-21 дні (днів) |
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KP25A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw Mounting: screw Max. off-state voltage: 1.6kV Max. load current: 40A Load current: 25A Gate current: 90mA Max. forward impulse current: 380A Kind of package: bulk Features of semiconductor devices: phase controlled thyristor (PCT) Type of thyristor: stud Case: TO208AA кількість в упаковці: 1 шт |
на замовлення 10 шт: термін постачання 14-21 дні (днів) |
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KP50A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 72A Load current: 50A Gate current: 150mA Case: TO208AC Mounting: screw Kind of package: bulk Max. forward impulse current: 0.9kA Features of semiconductor devices: phase controlled thyristor (PCT) |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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KP50A 1600V | HUAJING |
![]() Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw Type of thyristor: stud Max. off-state voltage: 1.6kV Max. load current: 72A Load current: 50A Gate current: 150mA Case: TO208AC Mounting: screw Kind of package: bulk Max. forward impulse current: 0.9kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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ST600C12C | HUAJING | ST600C12C-HUA Button thyristors |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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CD5668CB |
Виробник: HUAJING
09+ HSOP32
09+ HSOP32
на замовлення 2650 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CD9088CB |
Виробник: HUAJING
01+ SOP16
01+ SOP16
на замовлення 49 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
04+
04+
на замовлення 1388 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
CEFGCJ1.8432 |
Виробник: HUAJING
0515
0515
на замовлення 89 шт:
термін постачання 14-28 дні (днів)В кошику од. на суму грн.
HFGM100D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 100A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 100A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2789.74 грн |
HFGM100D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 100A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 100A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 3347.69 грн |
HFGM150D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4376.15 грн |
HFGM150D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 350A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5251.38 грн |
HFGM200D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4595.16 грн |
HFGM200D12V3 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 400A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 200A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 5514.19 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6879.42 грн |
HFGM300D12V3 |
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Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 300A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V3 62MM
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 7 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 8255.30 грн |
HFGM75D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2406.67 грн |
HFGM75D12V1 |
Виробник: HUAJING
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A; V1
Topology: IGBT half-bridge
Application: for UPS; Inverter
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±30V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Technology: PT
Case: V1
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 2888.01 грн |
KP1100A 600V |
Виробник: HUAJING
KP1100A06V-HUA Button thyristors
KP1100A06V-HUA Button thyristors
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 9010.21 грн |
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 436.37 грн |
3+ | 315.50 грн |
8+ | 297.71 грн |
KP25A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
на замовлення 10 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 453.02 грн |
3+ | 325.55 грн |
8+ | 307.76 грн |
KP25A 1200V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.2kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Type of thyristor: stud
Max. off-state voltage: 1.2kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Case: TO208AA
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 380A
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 523.64 грн |
3+ | 393.16 грн |
8+ | 357.25 грн |
KP25A 1600V |
![]() |
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 40A; 25A; Igt: 90mA; TO208AA; screw
Mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 40A
Load current: 25A
Gate current: 90mA
Max. forward impulse current: 380A
Kind of package: bulk
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: stud
Case: TO208AA
кількість в упаковці: 1 шт
на замовлення 10 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 543.62 грн |
3+ | 405.68 грн |
8+ | 369.32 грн |
KP50A 1600V |
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Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 927.69 грн |
2+ | 667.34 грн |
4+ | 630.99 грн |
KP50A 1600V |
![]() |
Виробник: HUAJING
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Stud mounting thyristors
Description: Thyristor: stud; 1.6kV; Ifmax: 72A; 50A; Igt: 150mA; TO208AC; screw
Type of thyristor: stud
Max. off-state voltage: 1.6kV
Max. load current: 72A
Load current: 50A
Gate current: 150mA
Case: TO208AC
Mounting: screw
Kind of package: bulk
Max. forward impulse current: 0.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1113.23 грн |
2+ | 831.60 грн |
4+ | 757.19 грн |