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IRLU014N IRLU014N Infineon Technologies irlr014n.pdf Description: MOSFET N-CH 55V 10A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRLR3714 IRLR3714 Infineon Technologies IRLR_LU3714.pdf Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRF5850 IRF5850 Infineon Technologies IRF5850.pdf Description: MOSFET 2P-CH 20V 2.2A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
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IRLU3714 IRLU3714 Infineon Technologies IRLR_LU3714.pdf Description: MOSFET N-CH 20V 36A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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IRLR3715 IRLR3715 Infineon Technologies irlr3715.pdf Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRLU3715 IRLU3715 Infineon Technologies irlr3715.pdf Description: MOSFET N-CH 20V 54A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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IRF5806 IRF5806 Infineon Technologies irf5806pbf.pdf?fileId=5546d462533600a4015355e3fbdc19bc Description: MOSFET P-CH 20V 4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
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IRU1117-18CP IRU1117-18CP Infineon Technologies iru1117-18.pdf Description: IC REG LIN 1.8V 800MA 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CP IRU1117-33CP Infineon Technologies iru1117-33.pdf Description: IC REG LIN 3.3V 800MA 2-ULTRAPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRL3715 IRL3715 Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRF5803 IRF5803 Infineon Technologies Infineon-IRF5803-DS-v01_01-EN.pdf?fileId=5546d462533600a4015355e3e4e019b6 Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRU1117CY IRU1117CY Infineon Technologies iru1117.pdf Description: IC REG LIN POS ADJ 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CY IRU1117-18CY Infineon Technologies iru1117-18.pdf Description: IC REG LINEAR 1.8V 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CY IRU1117-33CY Infineon Technologies iru1117-33.pdf Description: IC REG LINEAR 3.3V 800MA SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CY IRU1117-25CY Infineon Technologies iru1117-25.pdf Description: IC REG LINEAR 2.5V 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117CS IRU1117CS Infineon Technologies iru1117.pdf Description: IC REG LIN POS ADJ 800MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CS IRU1117-18CS Infineon Technologies iru1117-18.pdf Description: IC REG LINEAR 1.8V 800MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CS IRU1117-33CS Infineon Technologies iru1117-33.pdf Description: IC REG LINEAR 3.3V 800MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CS IRU1117-25CS Infineon Technologies iru1117-25.pdf Description: IC REG LINEAR 2.5V 800MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CP IRU1117-25CP Infineon Technologies iru1117-25.pdf Description: IC REG LIN 2.5V 800MA 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117CP Infineon Technologies iru1117.pdf Description: IC REG LIN POS ADJ 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRF5800 IRF5800 Infineon Technologies irf5800.pdf Description: MOSFET P-CH 30V 4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
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IRU1117-33CD IRU1117-33CD Infineon Technologies iru1117-33.pdf Description: IC REG LINEAR 3.3V 800MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRFU5410 IRFU5410 Infineon Technologies IRFR,U5410.pdf Description: MOSFET P-CH 100V 13A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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IRF7807A IRF7807A Infineon Technologies IRF7807%28A%29.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
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IRU1117-25CD IRU1117-25CD Infineon Technologies iru1117-25.pdf Description: IC REG LINEAR 2.5V 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
5+77.99 грн
10+61.54 грн
Мінімальне замовлення: 5
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IRU1117CD IRU1117CD Infineon Technologies iru1117.pdf Description: IC REG LINEAR POS ADJ 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CD IRU1117-18CD Infineon Technologies iru1117-18.pdf Description: IC REG LINEAR 1.8V 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRL3714S IRL3714S Infineon Technologies irl3714.pdf Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRF5851 IRF5851 Infineon Technologies irf5851.pdf Description: MOSFET N/P-CH 20V 2.7A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
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IRL3714L IRL3714L Infineon Technologies irl3714.pdf Description: MOSFET N-CH 20V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRL3715L IRL3715L Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRL3715S IRL3715S Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRF5852 IRF5852 Infineon Technologies irf5852.pdf Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
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IRF5805 IRF5805 Infineon Technologies irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Description: MOSFET P-CH 30V 3.8A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
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IRF7103Q IRF7103Q Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF5803D2 IRF5803D2 Infineon Technologies irf5803d2.pdf Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRU1015CP Infineon Technologies Description: IC REG LIN 1.5A 2-ULTRA THIN-PAK
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IRFR3708 IRFR3708 Infineon Technologies irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be Description: MOSFET N-CH 30V 61A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
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PVI5080NS Infineon Technologies Description: OPTOISO 4KV PHOTOVOLTAIC 8-SMT
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IR21271 IR21271 Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF7809AV IRF7809AV Infineon Technologies IRF7809AV.pdf Description: MOSFET N-CH 30V 13.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 16 V
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IRF7425 IRF7425 Infineon Technologies irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc Description: MOSFET P-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
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IRF7704 IRF7704 Infineon Technologies irf7704.pdf Description: MOSFET P-CH 40V 4.6A 8-TSSOP
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IRFU9014N IRFU9014N Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 60V 5.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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IRG4RC20F IRG4RC20F Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 22A 66W DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
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IRG4BC15UD IRG4BC15UD Infineon Technologies Infineon-IRG4BC15UD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f0fa2224a Description: IGBT 600V 14A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRG4BC15UD-S IRG4BC15UD-S Infineon Technologies irg4bc15ud-s.pdf Description: IGBT 600V 14A 49W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRF7450 IRF7450 Infineon Technologies irf7450pbf.pdf?fileId=5546d462533600a4015355fb33381be2 Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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IRG4BC15UD-L IRG4BC15UD-L Infineon Technologies irg4bc15ud-s.pdf Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRG4BC10SD-L IRG4BC10SD-L Infineon Technologies irg4bc10sd-s.pdf Description: IGBT 600V 14A 38W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRF7433 IRF7433 Infineon Technologies irf7433.pdf Description: MOSFET P-CH 12V 8.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 10 V
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IRF7705 IRF7705 Infineon Technologies irf7705.pdf Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
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IRF7805A IRF7805A Infineon Technologies irf7805.pdf?fileId=5546d462533600a401535607c6481cbe Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IRF7755 IRF7755 Infineon Technologies irf7755.pdf Description: MOSFET 2P-CH 20V 3.9A 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
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IRFU2407 IRFU2407 Infineon Technologies irfr2407.pdf Description: MOSFET N-CH 75V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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IRF7756 IRF7756 Infineon Technologies irf7756.pdf Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
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IRF7754 IRF7754 Infineon Technologies irf7754.pdf Description: MOSFET 2P-CH 12V 5.5A 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
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IRFZ48VS IRFZ48VS Infineon Technologies IRFZ48VS.pdf Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
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IRF7465 IRF7465 Infineon Technologies irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08 Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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IRLU014N irlr014n.pdf
IRLU014N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 10A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRLR3714 IRLR_LU3714.pdf
IRLR3714
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRF5850 IRF5850.pdf
IRF5850
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.2A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-TSOP
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IRLU3714 IRLR_LU3714.pdf
IRLU3714
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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IRLR3715 irlr3715.pdf
IRLR3715
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRLU3715 irlr3715.pdf
IRLU3715
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
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IRF5806 irf5806pbf.pdf?fileId=5546d462533600a4015355e3fbdc19bc
IRF5806
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
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IRU1117-18CP iru1117-18.pdf
IRU1117-18CP
Виробник: Infineon Technologies
Description: IC REG LIN 1.8V 800MA 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CP iru1117-33.pdf
IRU1117-33CP
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 800MA 2-ULTRAPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRL3715 irl3715.pdf
IRL3715
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRF5803 Infineon-IRF5803-DS-v01_01-EN.pdf?fileId=5546d462533600a4015355e3e4e019b6
IRF5803
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRU1117CY iru1117.pdf
IRU1117CY
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CY iru1117-18.pdf
IRU1117-18CY
Виробник: Infineon Technologies
Description: IC REG LINEAR 1.8V 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CY iru1117-33.pdf
IRU1117-33CY
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CY iru1117-25.pdf
IRU1117-25CY
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.5V 800MA SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117CS iru1117.pdf
IRU1117CS
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 800MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CS iru1117-18.pdf
IRU1117-18CS
Виробник: Infineon Technologies
Description: IC REG LINEAR 1.8V 800MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-33CS iru1117-33.pdf
IRU1117-33CS
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CS iru1117-25.pdf
IRU1117-25CS
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.5V 800MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-25CP iru1117-25.pdf
IRU1117-25CP
Виробник: Infineon Technologies
Description: IC REG LIN 2.5V 800MA 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117CP iru1117.pdf
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 2-UTHINPAK
Packaging: Tube
Package / Case: 2-Ultra Thin-Pak™
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: 2-Ultra Thin-Pak
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRF5800 irf5800.pdf
IRF5800
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 4A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
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IRU1117-33CD iru1117-33.pdf
IRU1117-33CD
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 800MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRFU5410 IRFR,U5410.pdf
IRFU5410
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
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IRF7807A IRF7807%28A%29.pdf
IRF7807A
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
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IRU1117-25CD iru1117-25.pdf
IRU1117-25CD
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.5V 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 2.5V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.99 грн
10+61.54 грн
Мінімальне замовлення: 5
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IRU1117CD iru1117.pdf
IRU1117CD
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Max): 3.6V
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRU1117-18CD iru1117-18.pdf
IRU1117-18CD
Виробник: Infineon Technologies
Description: IC REG LINEAR 1.8V 800MA DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: TO-252AA (DPAK)
Voltage - Output (Min/Fixed): 1.8V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
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IRL3714S irl3714.pdf
IRL3714S
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRF5851 irf5851.pdf
IRF5851
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 2.7A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
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IRL3714L irl3714.pdf
IRL3714L
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
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IRL3715L irl3715.pdf
IRL3715L
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRL3715S irl3715.pdf
IRL3715S
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
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IRF5852 irf5852.pdf
IRF5852
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.7A 6TSOP
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
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IRF5805 irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba
IRF5805
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3.8A MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
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IRF7103Q IR_PartNumberingSystem.pdf
IRF7103Q
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF5803D2 irf5803d2.pdf
IRF5803D2
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
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IRU1015CP
Виробник: Infineon Technologies
Description: IC REG LIN 1.5A 2-ULTRA THIN-PAK
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IRFR3708 irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be
IRFR3708
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
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PVI5080NS
Виробник: Infineon Technologies
Description: OPTOISO 4KV PHOTOVOLTAIC 8-SMT
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IR21271 ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF7809AV IRF7809AV.pdf
IRF7809AV
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 16 V
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IRF7425 irf7425pbf.pdf?fileId=5546d462533600a4015355fb1c361bdc
IRF7425
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7980 pF @ 15 V
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IRF7704 irf7704.pdf
IRF7704
Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 4.6A 8-TSSOP
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IRFU9014N IR_PartNumberingSystem.pdf
IRFU9014N
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 5.1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
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IRG4RC20F fundamentals-of-power-semiconductors
IRG4RC20F
Виробник: Infineon Technologies
Description: IGBT 600V 22A 66W DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 26ns/194ns
Switching Energy: 190µJ (on), 920µJ (off)
Test Condition: 480V, 12A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 66 W
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IRG4BC15UD Infineon-IRG4BC15UD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a40153563f0fa2224a
IRG4BC15UD
Виробник: Infineon Technologies
Description: IGBT 600V 14A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRG4BC15UD-S irg4bc15ud-s.pdf
IRG4BC15UD-S
Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRF7450 irf7450pbf.pdf?fileId=5546d462533600a4015355fb33381be2
IRF7450
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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IRG4BC15UD-L irg4bc15ud-s.pdf
IRG4BC15UD-L
Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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IRG4BC10SD-L irg4bc10sd-s.pdf
IRG4BC10SD-L
Виробник: Infineon Technologies
Description: IGBT 600V 14A 38W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IRF7433 irf7433.pdf
IRF7433
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 8.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 10 V
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IRF7705 irf7705.pdf
IRF7705
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 25 V
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IRF7805A irf7805.pdf?fileId=5546d462533600a401535607c6481cbe
IRF7805A
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
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IRF7755 irf7755.pdf
IRF7755
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 3.9A 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
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IRFU2407 irfr2407.pdf
IRFU2407
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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IRF7756 irf7756.pdf
IRF7756
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 12V 4.3A 8-TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
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IRF7754 irf7754.pdf
IRF7754
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 12V 5.5A 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-TSSOP
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IRFZ48VS IRFZ48VS.pdf
IRFZ48VS
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
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IRF7465 irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08
IRF7465
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
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