Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123059) > Сторінка 310 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IPB60R080P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 37A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Power Dissipation (Max): 129W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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IPB60R099P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Power Dissipation (Max): 117W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V |
на замовлення 1039 шт: термін постачання 21-31 дні (днів) |
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IPB60R120P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 26A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V |
на замовлення 1031 шт: термін постачання 21-31 дні (днів) |
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IPB60R280P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 6157 шт: термін постачання 21-31 дні (днів) |
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IPB60R360P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 9A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
на замовлення 2888 шт: термін постачання 21-31 дні (днів) |
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IPL60R065P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 41A 4VSONInput Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-VSON-4 Vgs(th) (Max) @ Id: 4V @ 800µA Power Dissipation (Max): 201W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Cut Tape (CT) |
на замовлення 8058 шт: термін постачання 21-31 дні (днів) |
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IPL60R105P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 33A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V |
на замовлення 3017 шт: термін постачання 21-31 дні (днів) |
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IPL60R125P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 27A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
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IPL60R285P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 13A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 5920 шт: термін постачання 21-31 дні (днів) |
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TLE94106ESXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 2A 24TSDSOPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 850mOhm LS, 850mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2A Technology: Power MOSFET Voltage - Load: 5.5V ~ 18V Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE4276SVAKSA2 | Infineon Technologies |
Description: IC REG LIN POS ADJ 400MA TO220-5Packaging: Tube Package / Case: TO-220-5 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: P-TO220-5-43 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Control Features: Inhibit Grade: Automotive Part Status: Obsolete PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4276GV50ATMA2 | Infineon Technologies |
Description: IC REG LIN 5V 400MA TO263-5-1Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Grade: Automotive Part Status: Discontinued at Digi-Key PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5AR0680BZSXKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Control Features: EN, Soft Start, Sync Part Status: Active Power (Watts): 39 W |
на замовлення 766 шт: термін постачання 21-31 дні (днів) |
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ICE5ASAGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DSOPower (Watts): 60 W Part Status: Active Control Features: EN, Soft Start, Sync Voltage - Start Up: 16 V Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Topology: Flyback Output Isolation: Non-Isolated Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-8 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ICE5GSAGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DSOPower (Watts): 60 W Part Status: Active Control Features: EN, Soft Start, Sync Voltage - Start Up: 16 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-8 Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Topology: Flyback Output Isolation: Non-Isolated Internal Switch(s): Yes Frequency - Switching: 125kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3201 шт: термін постачання 21-31 дні (днів) |
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ICE5AR4770AGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPart Status: Active Control Features: EN, Soft Start, Sync Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-12-21 Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Topology: Flyback Output Isolation: Non-Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Packaging: Cut Tape (CT) Power (Watts): 15 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5GR1680AGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOControl Features: EN, Soft Start, Sync Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-12-21 Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Topology: Flyback Output Isolation: Non-Isolated Voltage - Breakdown: 800V Internal Switch(s): Yes Frequency - Switching: 125kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Packaging: Cut Tape (CT) Power (Watts): 27 W Part Status: Active |
на замовлення 1233 шт: термін постачання 21-31 дні (днів) |
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ICE5AR0680AGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Control Features: EN, Soft Start, Sync Part Status: Active Power (Watts): 40 W |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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| DF450R12N2E4PB11BPSA1 | Infineon Technologies | Description: IGBT MODULE LOW POWER ECONO |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
| DF600R12N2E4PB11BPSA1 | Infineon Technologies | Description: IGBT MODULE LOW POWER ECONO |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||
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FD16001200R17HP4KB2BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 1600A 1050W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Brake Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 1600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FF1200R17IP5BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 1200A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 68 nF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FF1800R12IE5BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1800A 20MWInput Capacitance (Cies) @ Vce: 98.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 1800 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 Independent Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BGSA12UGL8E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT TSLP8-1Part Status: Active Supplier Device Package: PG-TSLP-8-1 P1dB: 11.2dBm Voltage - Supply: 1.8V ~ 3.6V RF Type: CDMA, EDGE, LTE, W-CDMA Circuit: SPDT Mounting Type: Surface Mount Package / Case: 8-XFLGA Packaging: Cut Tape (CT) |
на замовлення 29878 шт: термін постачання 21-31 дні (днів) |
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BTS70041EPPXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 4.4mOhm Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 15A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Over Current, Over/Under Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 43244 шт: термін постачання 21-31 дні (днів) |
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BTS70802EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 23.1mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6419 шт: термін постачання 21-31 дні (днів) |
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1ED020I12FAXUMA2 | Infineon Technologies |
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20Grade: Automotive Voltage - Output Supply: 13V ~ 20V Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 30ns, 50ns Supplier Device Package: PG-DSO-20 Voltage - Isolation: 4500Vrms Current - Output High, Low: 2A, 2A Technology: Magnetic Coupling Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGS12PN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.6dB Frequency Range: 500MHz ~ 6GHz Test Frequency: 6GHz Isolation: 20dB Supplier Device Package: PG-TSNP-10-1 Part Status: Active |
на замовлення 27671 шт: термін постачання 21-31 дні (днів) |
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IPN50R3K0CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 2.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-SOT223-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGT24LTR11N16E6327XTSA1 | Infineon Technologies |
Description: IC RF TXRX 16TSNPPackaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 24GHz ~ 24.25GHz Type: TxRx Only Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Power - Output: 6dBm Current - Receiving: 45mA Current - Transmitting: 45mA Supplier Device Package: PG-TSNP-16-9 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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IPD60R400CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 14.7A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 112W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: PG-TO252-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 17051 шт: термін постачання 21-31 дні (днів) |
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IPN50R1K4CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.8A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-SOT223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V |
на замовлення 7732 шт: термін постачання 21-31 дні (днів) |
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IPN50R2K0CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 3.6A SOT223Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-SOT223-3 Vgs(th) (Max) @ Id: 3.5V @ 50µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V |
на замовлення 8130 шт: термін постачання 21-31 дні (днів) |
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IPG20N10S4L35ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 16µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 5860 шт: термін постачання 21-31 дні (днів) |
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AUIRF8739L2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 57A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc) Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V Power Dissipation (Max): 3.8W (Ta), 340W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 40V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPG20N06S4L26AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIPS6031RTRL | Infineon Technologies |
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAKFeatures: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 46mOhm Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD90N10S4L06ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 90µA Supplier Device Package: PG-TO252-3-313 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5890 шт: термін постачання 21-31 дні (днів) |
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1EBN1001AEXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 13V ~ 18V High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-14-43 Rise / Fall Time (Typ): 50ns, 90ns Channel Type: Single Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.5V, 3.5V Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4540 шт: термін постачання 21-31 дні (днів) |
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AUIRF5210STRL | Infineon Technologies |
Description: MOSFET P-CH 100V 38A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V Power Dissipation (Max): 3.1W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD65R400CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 15.1A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V Power Dissipation (Max): 118W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 320µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
на замовлення 7984 шт: термін постачання 21-31 дні (днів) |
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BTS3046SDLATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 46mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.6A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 12629 шт: термін постачання 21-31 дні (днів) |
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BSC0504NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 21A/72A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1ED020I12FTAXUMA2 | Infineon Technologies |
Description: DGT ISO 4.5KV 1CH GT DVR DSO20Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 4500Vrms Supplier Device Package: PG-DSO-20-55 Rise / Fall Time (Typ): 30ns, 20ns Part Status: Not For New Designs Number of Channels: 1 Voltage - Output Supply: 4.5V ~ 5.5V |
на замовлення 2674 шт: термін постачання 21-31 дні (днів) |
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TLE73683EXUMA2 | Infineon Technologies |
Description: IC REG AUTO APPL 3OUT DSO-36 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB65R110CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 1692 шт: термін постачання 21-31 дні (днів) |
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IPB180N08S402ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 4V @ 220µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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BSL308PEH6327XTSA1 | Infineon Technologies |
Description: MOSFET 2P-CH 30V 2A TSOP6-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 1V @ 11µA Supplier Device Package: PG-TSOP6-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 17943 шт: термін постачання 21-31 дні (днів) |
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BSS138WH6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 280MA SOT323-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 26µA Supplier Device Package: PG-SOT323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9692 шт: термін постачання 21-31 дні (днів) |
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BSP125H6433XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 120MA SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11802 шт: термін постачання 21-31 дні (днів) |
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BSP716NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.3A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 1.8V @ 218µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9871QXA20XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 10 Grade: Automotive Supplier Device Package: PG-VQFN-48-31 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (36kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 3K x 8 Interface: SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXA20XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNNumber of I/O: 10 Part Status: Not For New Designs Supplier Device Package: PG-VQFN-48-31 Core Processor: ARM® Cortex®-M3 Applications: Automotive Program Memory Type: FLASH (64kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXA40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Part Status: Active Supplier Device Package: PG-VQFN-48-31 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (64kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 8017 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXW40XUMA1 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Part Status: Active Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (64kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 175°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3824 шт: термін постачання 21-31 дні (днів) |
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TLE9879QXA20XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNDigiKey Programmable: Not Verified Number of I/O: 10 Supplier Device Package: PG-VQFN-48-31 Core Processor: ARM® Cortex®-M3 Applications: Automotive Program Memory Type: FLASH (128kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9879QXW40XUMA1 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 175°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
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TLE9867QXA40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 10 Grade: Automotive Supplier Device Package: VQFN-48-31 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (64kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2336 шт: термін постачання 21-31 дні (днів) |
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TLE9867QXW20XUMA1 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 10 Grade: Automotive Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 175°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4079 шт: термін постачання 21-31 дні (днів) |
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TLE9869QXA20XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 10 Supplier Device Package: PG-VQFN-48-31 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3338 шт: термін постачання 21-31 дні (днів) |
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| IPB60R080P7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.01 грн |
| 10+ | 209.01 грн |
| 100+ | 148.74 грн |
| 500+ | 131.58 грн |
| IPB60R099P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 1039 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.64 грн |
| 10+ | 184.61 грн |
| 100+ | 135.70 грн |
| 500+ | 110.01 грн |
| IPB60R120P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 1031 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.66 грн |
| 10+ | 190.66 грн |
| 100+ | 134.28 грн |
| 500+ | 106.65 грн |
| IPB60R280P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 6157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.93 грн |
| 10+ | 123.87 грн |
| 100+ | 84.55 грн |
| 500+ | 63.57 грн |
| IPB60R360P7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2888 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.03 грн |
| 10+ | 105.89 грн |
| 100+ | 71.71 грн |
| 500+ | 53.55 грн |
| IPL60R065P7AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 41A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 201W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 41A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 201W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
на замовлення 8058 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 550.96 грн |
| 10+ | 359.52 грн |
| 100+ | 262.87 грн |
| 500+ | 239.67 грн |
| IPL60R105P7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 3017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.34 грн |
| 10+ | 209.76 грн |
| 100+ | 148.82 грн |
| 500+ | 121.70 грн |
| IPL60R125P7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.01 грн |
| 10+ | 187.60 грн |
| 100+ | 132.03 грн |
| 500+ | 104.47 грн |
| IPL60R285P7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.03 грн |
| 10+ | 106.78 грн |
| 100+ | 73.19 грн |
| 500+ | 55.21 грн |
| TLE94106ESXUMA1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE4276SVAKSA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4276GV50ATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| ICE5AR0680BZSXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
на замовлення 766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.88 грн |
| 10+ | 108.35 грн |
| 50+ | 93.11 грн |
| 100+ | 82.96 грн |
| 250+ | 78.29 грн |
| 500+ | 75.48 грн |
| ICE5ASAGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.29 грн |
| ICE5GSAGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Power (Watts): 60 W
Part Status: Active
Control Features: EN, Soft Start, Sync
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-8
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3201 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.87 грн |
| 10+ | 45.44 грн |
| 25+ | 40.95 грн |
| 100+ | 33.83 грн |
| 250+ | 31.64 грн |
| 500+ | 30.32 грн |
| 1000+ | 28.75 грн |
| ICE5AR4770AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 15 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Part Status: Active
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 15 W
товару немає в наявності
В кошику
од. на суму грн.
| ICE5GR1680AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 27 W
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Control Features: EN, Soft Start, Sync
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-21
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Topology: Flyback
Output Isolation: Non-Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 125kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
Power (Watts): 27 W
Part Status: Active
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.63 грн |
| 10+ | 91.56 грн |
| 25+ | 83.37 грн |
| 100+ | 69.79 грн |
| 250+ | 65.77 грн |
| 500+ | 63.34 грн |
| 1000+ | 60.34 грн |
| ICE5AR0680AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.35 грн |
| 10+ | 204.01 грн |
| DF450R12N2E4PB11BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| DF600R12N2E4PB11BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| FD16001200R17HP4KB2BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 75710.03 грн |
| FF1200R17IP5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 42309.96 грн |
| FF1800R12IE5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 1800A 20MW
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 59219.99 грн |
| BGSA12UGL8E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT TSLP8-1
Part Status: Active
Supplier Device Package: PG-TSLP-8-1
P1dB: 11.2dBm
Voltage - Supply: 1.8V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPDT
Mounting Type: Surface Mount
Package / Case: 8-XFLGA
Packaging: Cut Tape (CT)
Description: IC RF SWITCH SPDT TSLP8-1
Part Status: Active
Supplier Device Package: PG-TSLP-8-1
P1dB: 11.2dBm
Voltage - Supply: 1.8V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPDT
Mounting Type: Surface Mount
Package / Case: 8-XFLGA
Packaging: Cut Tape (CT)
на замовлення 29878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 11+ | 29.62 грн |
| 25+ | 27.88 грн |
| 100+ | 23.94 грн |
| 250+ | 22.60 грн |
| 500+ | 21.65 грн |
| 1000+ | 20.42 грн |
| 5000+ | 18.56 грн |
| BTS70041EPPXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 43244 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.21 грн |
| 10+ | 109.92 грн |
| 25+ | 100.23 грн |
| 100+ | 84.10 грн |
| 250+ | 79.36 грн |
| 500+ | 76.94 грн |
| BTS70802EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.74 грн |
| 10+ | 70.67 грн |
| 25+ | 64.11 грн |
| 100+ | 53.39 грн |
| 250+ | 50.15 грн |
| 500+ | 48.20 грн |
| 1000+ | 46.86 грн |
| 1ED020I12FAXUMA2 |
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Виробник: Infineon Technologies
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Grade: Automotive
Voltage - Output Supply: 13V ~ 20V
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 30ns, 50ns
Supplier Device Package: PG-DSO-20
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Grade: Automotive
Voltage - Output Supply: 13V ~ 20V
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 30ns, 50ns
Supplier Device Package: PG-DSO-20
Voltage - Isolation: 4500Vrms
Current - Output High, Low: 2A, 2A
Technology: Magnetic Coupling
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BGS12PN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
на замовлення 27671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 11+ | 27.83 грн |
| 25+ | 24.95 грн |
| 100+ | 20.41 грн |
| 250+ | 18.98 грн |
| 500+ | 18.12 грн |
| 1000+ | 17.12 грн |
| 2500+ | 17.06 грн |
| IPN50R3K0CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BGT24LTR11N16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 532.36 грн |
| 10+ | 348.18 грн |
| 100+ | 268.12 грн |
| IPD60R400CEAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 17051 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.86 грн |
| 10+ | 77.68 грн |
| 100+ | 51.78 грн |
| 500+ | 38.15 грн |
| 1000+ | 34.80 грн |
| IPN50R1K4CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 7732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 32.83 грн |
| 100+ | 21.17 грн |
| 500+ | 15.15 грн |
| 1000+ | 13.63 грн |
| IPN50R2K0CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A SOT223
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-SOT223-3
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Description: MOSFET N-CH 500V 3.6A SOT223
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-SOT223-3
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
на замовлення 8130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.72 грн |
| 11+ | 27.16 грн |
| 100+ | 17.45 грн |
| 500+ | 12.43 грн |
| 1000+ | 11.15 грн |
| IPG20N10S4L35ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 5860 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.28 грн |
| 10+ | 101.11 грн |
| 100+ | 68.27 грн |
| 500+ | 50.86 грн |
| 1000+ | 46.61 грн |
| 2000+ | 43.04 грн |
| AUIRF8739L2TR |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| IPG20N06S4L26AATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AUIPS6031RTRL |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
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од. на суму грн.
| IPD90N10S4L06ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.08 грн |
| 10+ | 117.38 грн |
| 100+ | 80.82 грн |
| 500+ | 62.20 грн |
| 1EBN1001AEXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.62 грн |
| 10+ | 160.06 грн |
| 25+ | 146.76 грн |
| 100+ | 124.04 грн |
| 250+ | 117.51 грн |
| 500+ | 113.57 грн |
| 1000+ | 108.53 грн |
| AUIRF5210STRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IPD65R400CEAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 7984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 60.29 грн |
| 100+ | 40.11 грн |
| 500+ | 29.50 грн |
| 1000+ | 26.88 грн |
| BTS3046SDLATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 12629 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.78 грн |
| 10+ | 105.81 грн |
| 25+ | 96.56 грн |
| 100+ | 81.00 грн |
| 250+ | 76.42 грн |
| 500+ | 74.08 грн |
| BSC0504NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 1ED020I12FTAXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 2674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 542.44 грн |
| 10+ | 404.22 грн |
| 25+ | 374.72 грн |
| 100+ | 321.24 грн |
| 250+ | 313.31 грн |
| TLE73683EXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 3OUT DSO-36
Description: IC REG AUTO APPL 3OUT DSO-36
товару немає в наявності
В кошику
од. на суму грн.
| IPB65R110CFDAATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 535.46 грн |
| 10+ | 346.46 грн |
| 100+ | 250.83 грн |
| 500+ | 197.13 грн |
| IPB180N08S402ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.28 грн |
| 10+ | 359.00 грн |
| BSL308PEH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 2A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 17943 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.29 грн |
| 10+ | 42.83 грн |
| 100+ | 27.94 грн |
| 500+ | 20.19 грн |
| 1000+ | 18.25 грн |
| BSS138WH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9692 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.80 грн |
| 21+ | 14.25 грн |
| 100+ | 8.92 грн |
| 500+ | 6.19 грн |
| 1000+ | 5.49 грн |
| 2000+ | 4.89 грн |
| 5000+ | 4.18 грн |
| BSP125H6433XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11802 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.89 грн |
| 10+ | 54.10 грн |
| 100+ | 35.62 грн |
| 500+ | 25.99 грн |
| 1000+ | 23.59 грн |
| 2000+ | 21.58 грн |
| BSP716NH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLE9871QXA20XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (36kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 3K x 8
Interface: SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (36kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 3K x 8
Interface: SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 375.06 грн |
| 10+ | 276.10 грн |
| 25+ | 254.87 грн |
| 100+ | 217.32 грн |
| 250+ | 206.88 грн |
| 500+ | 200.59 грн |
| 1000+ | 192.21 грн |
| TLE9877QXA20XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Number of I/O: 10
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Number of I/O: 10
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.02 грн |
| TLE9877QXA40XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 8017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.80 грн |
| 10+ | 282.22 грн |
| 25+ | 260.64 грн |
| 100+ | 222.29 грн |
| 250+ | 211.65 грн |
| 500+ | 205.24 грн |
| 1000+ | 196.69 грн |
| TLE9877QXW40XUMA1 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Part Status: Active
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3824 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.18 грн |
| 10+ | 297.21 грн |
| 25+ | 274.63 грн |
| 100+ | 234.43 грн |
| 250+ | 223.32 грн |
| 500+ | 216.62 грн |
| 1000+ | 207.64 грн |
| TLE9879QXA20XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Applications: Automotive
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLE9879QXW40XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.65 грн |
| 10+ | 314.23 грн |
| 25+ | 290.54 грн |
| 100+ | 248.21 грн |
| 250+ | 236.55 грн |
| 500+ | 229.52 грн |
| 1000+ | 220.08 грн |
| TLE9867QXA40XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (64kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 349.48 грн |
| 10+ | 256.55 грн |
| 25+ | 236.55 грн |
| 100+ | 201.47 грн |
| 250+ | 191.67 грн |
| 500+ | 185.77 грн |
| 1000+ | 177.94 грн |
| TLE9867QXW20XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.90 грн |
| 10+ | 198.72 грн |
| TLE9869QXA20XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SOC MOTOR DRIVER 48VQFN
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 10
Supplier Device Package: PG-VQFN-48-31
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3338 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.68 грн |
| 10+ | 199.61 грн |










































