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TLE88882QKXUMA1 TLE88882QKXUMA1 Infineon Technologies Infineon-Infineon-TLE8888QK-DS-v01_02-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095 Description: IC MOTOR CTLR 100LQFP
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TLE92613BQXV33XUMA1 TLE92613BQXV33XUMA1 Infineon Technologies Infineon-TLE9261-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757f18f3924 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
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TLE9262BQXV33XUMA1 TLE9262BQXV33XUMA1 Infineon Technologies Infineon-TLE9262BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ee4293957 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
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TLE9262BQXXUMA1 TLE9262BQXXUMA1 Infineon Technologies Infineon-TLE9262BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+153.94 грн
Мінімальне замовлення: 2500
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TLE9263BQXV33XUMA1 TLE9263BQXV33XUMA1 Infineon Technologies Infineon-TLE9263BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805ee79398d Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+152.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9263BQXXUMA1 TLE9263BQXXUMA1 Infineon Technologies Infineon-TLE9263BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805e310398a Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
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BCR430UXTSA1 BCR430UXTSA1 Infineon Technologies Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
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BGA123L4E6327XTSA1 BGA123L4E6327XTSA1 Infineon Technologies Infineon-BGA%20123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+22.14 грн
Мінімальне замовлення: 15000
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BGSA12UGL8E6327XTSA1 BGSA12UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5 Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+20.14 грн
Мінімальне замовлення: 15000
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2PS18012E44G40113NOSA1 2PS18012E44G40113NOSA1 Infineon Technologies Infineon-2PS18012E44G40113-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152d47f32ca0030 Description: IGBT MOD 1200V 2560A 5600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 60°C
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 2560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5600 W
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6MS24017E33W32859NOSA1 6MS24017E33W32859NOSA1 Infineon Technologies Infineon-6MS24017E33W32859-DS-v02_00-en_de.pdf?fileId=db3a304332fc1ee70133160591656ec1 Description: IGBT MODULE 9980W STACK A-MS3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Power - Max: 9980 W
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6MS24017E33W32860NOSA1 Infineon Technologies Infineon-6MS24017E33W32860-DS-v02_00-en_de.pdf?fileId=db3a304332fc1ee70133161c7d5d6eff Description: MODULE IGBT STACK A-MS3-1
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6MS24017P43W39872NOSA1 Infineon Technologies Infineon-6MS24017P43W39872-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace7a926455 Description: IGBT MODULE 1700V 1100A
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6MS24017P43W39873NOSA1 Infineon Technologies Infineon-6MS24017P43W39873-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152e98facea2c9d Description: IGBT MODULE 1700V 1100A
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6MS24017P43W41646NOSA1 6MS24017P43W41646NOSA1 Infineon Technologies Infineon-6MS24017P43W41646-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dcc5726477dd4 Description: IGBT MODULE 1700V STACK A-MS3-1
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2025992.13 грн
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6MS30017E43W34404NOSA1 Infineon Technologies Infineon-6MS30017E43W34404-DS-v02_01-en.pdf?fileId=db3a3043382e83730138958b66eb1660 Description: IGBT MODULE 1700V 4280A
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6PS18012E4FG38393NWSA1 6PS18012E4FG38393NWSA1 Infineon Technologies Infineon-6PS18012E4FG38393-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace6540644f Description: IGBT MODULE 1200V STACK A-PSF-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
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BSM100GAL120DLCKHOSA1 Infineon Technologies Description: IGBT MOD 1200V 205A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 205 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM100GB120DLCKHOSA1 Infineon Technologies Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
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BSM100GB120DN2HOSA1 Infineon Technologies 100gb120dn2.pdf Description: IGBT MOD 1200V 150A 800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 800 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM100GB120DN2KHOSA1 Infineon Technologies 100gb120dnk.pdf Description: IGBT MOD 1200V 145A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM10GD120DN2BOSA1 Infineon Technologies Description: IGBT MODULE 2 LOW PWR ECONO2-1
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BSM10GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MODULE 1200V 15A 80W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
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BSM15GD120DLCE3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 35A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 76 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM15GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM15GP120BOSA1 Infineon Technologies bsm15gp120.pdf Description: IGBT MOD 1200V 35A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM200GA120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GD60DLCBOSA1 Infineon Technologies Description: IGBT MOD 600V 226A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 226 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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BSM20GP60BOSA1 Infineon Technologies Description: IGBT MODULE 600V 35A 130W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 130 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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BSM25GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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BSM25GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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BSM300GA120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 570A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
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BSM300GA170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 600A 2520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BSM300GB60DLCHOSA1 Infineon Technologies Description: IGBT MOD 600V 375A 1250W
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BSM30GD60DLCBOSA1 Infineon Technologies Description: IGBT MODULE 600V 40A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
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BSM35GB120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GD120DLCE3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GD120DN2E3224BOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GP120GBOSA1 Infineon Technologies Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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BSM50GAL120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 115A 460W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GB120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 72A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GD120DN2E3226BOSA1 Infineon Technologies Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GP60BOSA1 Infineon Technologies Description: IGBT MODULE 600V 70A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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BSM75GAL120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 105A 625W
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BSM75GAR120DN2HOSA1 Infineon Technologies Description: IGBT MOD 1200V 30A 235W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM75GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 170A 690W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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BSM75GB120DN2HOSA1 Infineon Technologies 75gb120dn2.pdf Description: IGBT MOD 1200V 105A 625W
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BSM75GD120DN2BOSA1 Infineon Technologies Description: IGBT MOD 1200V 103A 520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 103 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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BYM300A120DN2HOSA1 BYM300A120DN2HOSA1 Infineon Technologies Infineon-BYM300A120DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b430eaef526b Description: IGBT MOD 1200V 450A 1000W
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BYM600A170DN2HOSA1 BYM600A170DN2HOSA1 Infineon Technologies Infineon-BYM600A170DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fc7c14d7c Description: IGBT MODULE 1400W MED PWR 62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Power - Max: 1400 W
товару немає в наявності
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DD180N20SHPSA1 DD180N20SHPSA1 Infineon Technologies Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
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DD340N20SHPSA1 DD340N20SHPSA1 Infineon Technologies DD340N20S.pdf Description: DIODE MOD GP 2000V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
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DDB6U100N16RRBOSA1 DDB6U100N16RRBOSA1 Infineon Technologies Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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DDB6U104N16RRB37BOSA1 Infineon Technologies Description: MOD DIODE BRIDGE ECONO2-7
Packaging: Tray
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DF650R17IE4BOSA1 DF650R17IE4BOSA1 Infineon Technologies Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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F3L300R07PE4PBOSA1 F3L300R07PE4PBOSA1 Infineon Technologies Infineon-F3L300R07PE4P-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c7ec845276 Description: IGBT MOD 650V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 280A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+11202.61 грн
В кошику  од. на суму  грн.
F3L300R12MT4B22BOSA1 F3L300R12MT4B22BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496 Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4B23BOSA1 F3L300R12MT4B23BOSA1 Infineon Technologies Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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TLE88882QKXUMA1 Infineon-Infineon-TLE8888QK-DS-v01_02-EN.pdf?fileId=5546d4624f205c9a014f402ebd1c6095
TLE88882QKXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR CTLR 100LQFP
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TLE92613BQXV33XUMA1 Infineon-TLE9261-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609757f18f3924
TLE92613BQXV33XUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
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TLE9262BQXV33XUMA1 Infineon-TLE9262BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ee4293957
TLE9262BQXV33XUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
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TLE9262BQXXUMA1 Infineon-TLE9262BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68
TLE9262BQXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+153.94 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9263BQXV33XUMA1 Infineon-TLE9263BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805ee79398d
TLE9263BQXV33XUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+152.58 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9263BQXXUMA1 Infineon-TLE9263BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609805e310398a
TLE9263BQXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
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BCR430UXTSA1
BCR430UXTSA1
Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
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BGA123L4E6327XTSA1 Infineon-BGA%20123L4-DS-v01_00-EN.pdf?fileId=5546d4625fe36784015ffd006b653a7c
BGA123L4E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP BEIDOU GALI 1.55-1.615GHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Beidou, Galileo, GLONASS, GPS
Voltage - Supply: 1.1V ~ 3.6V
Gain: 18.4dB
Current - Supply: 1.1mA
Noise Figure: 0.75dB
Test Frequency: 1.55GHz ~ 1.615GHz
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+22.14 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
BGSA12UGL8E6327XTSA1 Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5
BGSA12UGL8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15000+20.14 грн
Мінімальне замовлення: 15000
В кошику  од. на суму  грн.
2PS18012E44G40113NOSA1 Infineon-2PS18012E44G40113-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152d47f32ca0030
2PS18012E44G40113NOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2560A 5600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 60°C
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 2560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5600 W
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6MS24017E33W32859NOSA1 Infineon-6MS24017E33W32859-DS-v02_00-en_de.pdf?fileId=db3a304332fc1ee70133160591656ec1
6MS24017E33W32859NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 9980W STACK A-MS3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -25°C ~ 55°C
NTC Thermistor: Yes
Supplier Device Package: Module
Power - Max: 9980 W
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6MS24017E33W32860NOSA1 Infineon-6MS24017E33W32860-DS-v02_00-en_de.pdf?fileId=db3a304332fc1ee70133161c7d5d6eff
Виробник: Infineon Technologies
Description: MODULE IGBT STACK A-MS3-1
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6MS24017P43W39872NOSA1 Infineon-6MS24017P43W39872-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace7a926455
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1100A
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6MS24017P43W39873NOSA1 Infineon-6MS24017P43W39873-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152e98facea2c9d
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1100A
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6MS24017P43W41646NOSA1 Infineon-6MS24017P43W41646-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dcc5726477dd4
6MS24017P43W41646NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V STACK A-MS3-1
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2025992.13 грн
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6MS30017E43W34404NOSA1 Infineon-6MS30017E43W34404-DS-v02_01-en.pdf?fileId=db3a3043382e83730138958b66eb1660
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4280A
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6PS18012E4FG38393NWSA1 Infineon-6PS18012E4FG38393-DS-v02_00-EN.pdf?fileId=5546d462525dbac40152cace6540644f
6PS18012E4FG38393NWSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V STACK A-PSF-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
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BSM100GAL120DLCKHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 205A 835W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 205 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 835 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM100GB120DLCKHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 830W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
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BSM100GB120DN2HOSA1 100gb120dn2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 800 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM100GB120DN2KHOSA1 100gb120dnk.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 145A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 145 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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BSM10GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 2 LOW PWR ECONO2-1
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BSM10GD120DN2E3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 15A 80W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
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BSM15GD120DLCE3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 76 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM15GD120DN2E3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM15GP120BOSA1 bsm15gp120.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 180W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM200GA120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GD60DLCBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 226A 700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 226 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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BSM20GP60BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 35A 130W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 130 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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BSM25GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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BSM25GD120DN2E3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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BSM300GA120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
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BSM300GA170DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 600A 2520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2520 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
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BSM300GB60DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 375A 1250W
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BSM30GD60DLCBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 40A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
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BSM35GB120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GD120DLCE3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 80 µA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GD120DN2E3224BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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BSM35GP120GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 45A 230W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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BSM50GAL120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 115A 460W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 460 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GB120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 78A 400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 72A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GD120DN2E3226BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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BSM50GP60BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 70A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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BSM75GAL120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 625W
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BSM75GAR120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 235W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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BSM75GB120DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 170A 690W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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BSM75GB120DN2HOSA1 75gb120dn2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 105A 625W
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BSM75GD120DN2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 103A 520W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 103 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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BYM300A120DN2HOSA1 Infineon-BYM300A120DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b430eaef526b
BYM300A120DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1000W
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BYM600A170DN2HOSA1 Infineon-BYM600A170DN2-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fc7c14d7c
BYM600A170DN2HOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1400W MED PWR 62MM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: Module
Power - Max: 1400 W
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DD180N20SHPSA1
DD180N20SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2000V 226A BGPB34SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 226A
Supplier Device Package: BG-PB34SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
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DD340N20SHPSA1 DD340N20S.pdf
DD340N20SHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2000V 330A BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
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DDB6U100N16RRBOSA1 Infineon-DDB6U100N16RR-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430f24e52af
DDB6U100N16RRBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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DDB6U104N16RRB37BOSA1
Виробник: Infineon Technologies
Description: MOD DIODE BRIDGE ECONO2-7
Packaging: Tray
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DF650R17IE4BOSA1 Infineon-DF650R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f1e5a664bbc
DF650R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 930A 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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F3L300R07PE4PBOSA1 Infineon-F3L300R07PE4P-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c7ec845276
F3L300R07PE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 280A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11202.61 грн
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F3L300R12MT4B22BOSA1 Infineon-F3L300R12MT4_B22-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133fa764b864496
F3L300R12MT4B22BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4B23BOSA1 Infineon-F3L300R12MT4_B23-DS-v03_00-en_de.pdf?fileId=db3a304333b8a7ca0133f9d470e0434c
F3L300R12MT4B23BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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