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S25FL032P0XMFA000 S25FL032P0XMFA000 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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S25FL032P0XMFA003 S25FL032P0XMFA003 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S25FL032P0XNFA010 S25FL032P0XNFA010 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL032P0XNFA013 S25FL032P0XNFA013 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL128LDPBHV030 S25FL128LDPBHV030 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
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S25FL128LDPBHV033 S25FL128LDPBHV033 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
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S25FS128SAGNFI003 S25FS128SAGNFI003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FS128SDSBHM200 S25FS128SDSBHM200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S29GL01GT10FAI030 S29GL01GT10FAI030 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
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S29GL01GT10FHI040 S29GL01GT10FHI040 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S70FL01GSDSMFB010 S70FL01GSDSMFB010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
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S70FL01GSDSMFV010 S70FL01GSDSMFV010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
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S70KL1281DABHV023 S70KL1281DABHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KS1281DPBHV023 S70KS1281DPBHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies Infineon-IPB60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b797c047f Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)
1+362.72 грн
10+243.22 грн
100+191.87 грн
500+176.71 грн
В кошику  од. на суму  грн.
IPB60R080P7ATMA1 IPB60R080P7ATMA1 Infineon Technologies infineon-ipb60r080p7-ds-en.pdf Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 1248 шт:
термін постачання 21-31 дні (днів)
1+347.78 грн
10+222.36 грн
100+158.23 грн
500+139.98 грн
В кошику  од. на суму  грн.
IPB60R099P7ATMA1 IPB60R099P7ATMA1 Infineon Technologies Infineon-IPB60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a8704aa0489 Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 1039 шт:
термін постачання 21-31 дні (днів)
2+296.32 грн
10+197.74 грн
100+145.35 грн
500+117.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R120P7ATMA1 IPB60R120P7ATMA1 Infineon Technologies infineon-ipb60r120p7-ds-en.pdf Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
2+268.09 грн
10+168.89 грн
100+118.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R280P7ATMA1 IPB60R280P7ATMA1 Infineon Technologies infineon-ipb60r280p7-ds-en.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 5723 шт:
термін постачання 21-31 дні (днів)
2+174.30 грн
10+108.06 грн
100+73.76 грн
500+55.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R360P7ATMA1 IPB60R360P7ATMA1 Infineon Technologies infineon-ipb60r360p7-ds-en.pdf Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
3+150.23 грн
10+92.24 грн
100+62.43 грн
500+46.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R065P7AUMA1 IPL60R065P7AUMA1 Infineon Technologies Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36 Description: MOSFET N-CH 600V 41A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 9635 шт:
термін постачання 21-31 дні (днів)
1+481.41 грн
10+311.88 грн
100+229.20 грн
В кошику  од. на суму  грн.
IPL60R105P7AUMA1 IPL60R105P7AUMA1 Infineon Technologies infineon-ipl60r105p7-ds-en.pdf Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 3069 шт:
термін постачання 21-31 дні (днів)
2+322.88 грн
10+205.41 грн
100+145.39 грн
500+126.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R125P7AUMA1 IPL60R125P7AUMA1 Infineon Technologies Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42 Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
2+264.77 грн
10+166.89 грн
100+116.73 грн
500+96.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R285P7AUMA1 IPL60R285P7AUMA1 Infineon Technologies infineon-ipl60r285p7-ds-en.pdf Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
4+101.26 грн
10+82.01 грн
100+73.65 грн
500+62.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLE94106ESXUMA1 TLE94106ESXUMA1 Infineon Technologies Infineon-TLE94106ES-DS-v01_00-EN.pdf?fileId=5546d46261ff577701621efb5c137b1a Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE4276SVAKSA2 TLE4276SVAKSA2 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4276GV50ATMA2 TLE4276GV50ATMA2 Infineon Technologies TLE4276_Rev2.8_1-10-18.pdf Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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ICE5AR0680BZSXKLA1 ICE5AR0680BZSXKLA1 Infineon Technologies Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
3+146.91 грн
10+104.39 грн
50+89.57 грн
100+79.74 грн
250+75.19 грн
500+72.44 грн
1000+69.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5ASAGXUMA1 ICE5ASAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+76.36 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE5GSAGXUMA1 ICE5GSAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 3201 шт:
термін постачання 21-31 дні (днів)
5+70.55 грн
10+48.68 грн
25+43.86 грн
100+36.24 грн
250+33.89 грн
500+32.47 грн
1000+30.79 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
3+137.78 грн
10+98.07 грн
25+89.29 грн
100+74.75 грн
250+70.44 грн
500+67.84 грн
1000+64.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
2+253.15 грн
10+218.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DF450R12N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
В кошику  од. на суму  грн.
DF600R12N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
В кошику  од. на суму  грн.
FD16001200R17HP4KB2BOSA1 FD16001200R17HP4KB2BOSA1 Infineon Technologies Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+99592.61 грн
В кошику  од. на суму  грн.
FF1200R17IP5BPSA1 FF1200R17IP5BPSA1 Infineon Technologies Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+45151.13 грн
В кошику  од. на суму  грн.
FF1800R12IE5BPSA1 FF1800R12IE5BPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+63431.37 грн
В кошику  од. на суму  грн.
BGSA12UGL8E6327XTSA1 BGSA12UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5 Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
на замовлення 29878 шт:
термін постачання 21-31 дні (днів)
9+38.18 грн
11+31.73 грн
25+29.86 грн
100+25.65 грн
250+24.21 грн
500+23.19 грн
1000+21.87 грн
5000+19.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTS70041EPPXUMA1 BTS70041EPPXUMA1 Infineon Technologies Infineon-BTS7004-1EPP-DS-v01_00-EN.pdf?fileId=5546d4626102d35a016147550a725555 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
3+159.36 грн
10+113.42 грн
25+103.46 грн
100+86.85 грн
250+81.95 грн
500+79.00 грн
1000+75.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS70802EPAXUMA1 BTS70802EPAXUMA1 Infineon Technologies Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2676 шт:
термін постачання 21-31 дні (днів)
4+103.75 грн
10+72.97 грн
25+66.21 грн
100+55.13 грн
250+51.79 грн
500+49.78 грн
1000+47.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1ED020I12FAXUMA2 1ED020I12FAXUMA2 Infineon Technologies 1ED020I12FA_Rev3.0_05-21-13.pdf Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Obsolete
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
на замовлення 4276 шт:
термін постачання 21-31 дні (днів)
8+41.50 грн
12+28.37 грн
25+25.48 грн
100+20.84 грн
250+19.38 грн
500+18.50 грн
1000+17.48 грн
2500+16.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPN50R3K0CEATMA1 IPN50R3K0CEATMA1 Infineon Technologies Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5 Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGT24LTR11N16E6327XTSA1 BGT24LTR11N16E6327XTSA1 Infineon Technologies Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
1+570.22 грн
10+372.94 грн
100+287.19 грн
В кошику  од. на суму  грн.
IPD60R400CEAUMA1 IPD60R400CEAUMA1 Infineon Technologies Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 10035 шт:
термін постачання 21-31 дні (днів)
3+111.22 грн
10+67.62 грн
100+45.09 грн
500+33.23 грн
1000+30.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN50R1K4CEATMA1 IPN50R1K4CEATMA1 Infineon Technologies Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7 Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 6323 шт:
термін постачання 21-31 дні (днів)
6+56.44 грн
10+33.97 грн
100+21.92 грн
500+15.71 грн
1000+14.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPN50R2K0CEATMA1 IPN50R2K0CEATMA1 Infineon Technologies Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
на замовлення 8130 шт:
термін постачання 21-31 дні (днів)
7+48.97 грн
11+29.09 грн
100+18.69 грн
500+13.31 грн
1000+11.95 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 Infineon Technologies Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30900 шт:
термін постачання 21-31 дні (днів)
3+136.95 грн
10+82.25 грн
100+56.72 грн
500+42.21 грн
1000+39.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIRF8739L2TR AUIRF8739L2TR Infineon Technologies auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416 Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPG20N06S4L26AATMA1 IPG20N06S4L26AATMA1 Infineon Technologies Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2981 шт:
термін постачання 21-31 дні (днів)
3+120.35 грн
10+73.69 грн
100+49.30 грн
500+36.46 грн
1000+33.30 грн
2000+32.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIPS6031RTRL AUIPS6031RTRL Infineon Technologies auips6031.pdf?fileId=5546d462533600a4015355a797f51311 Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPD90N10S4L06ATMA1 IPD90N10S4L06ATMA1 Infineon Technologies Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)
2+202.52 грн
10+125.73 грн
100+86.57 грн
500+66.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EBN1001AEXUMA1 1EBN1001AEXUMA1 Infineon Technologies Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
2+237.38 грн
10+171.44 грн
25+157.20 грн
100+132.86 грн
250+125.87 грн
500+121.65 грн
1000+116.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF5210STRL AUIRF5210STRL Infineon Technologies auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3 Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPD65R400CEAUMA1 IPD65R400CEAUMA1 Infineon Technologies Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 7984 шт:
термін постачання 21-31 дні (днів)
4+106.24 грн
10+64.58 грн
100+42.96 грн
500+31.60 грн
1000+28.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3046SDLATMA1 BTS3046SDLATMA1 Infineon Technologies Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21 Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 16933 шт:
термін постачання 21-31 дні (днів)
3+149.40 грн
10+106.14 грн
25+96.78 грн
100+81.13 грн
250+76.51 грн
500+73.73 грн
1000+70.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIPS7081STRL AUIPS7081STRL Infineon Technologies auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BSC0504NSIATMA1 BSC0504NSIATMA1 Infineon Technologies Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
на замовлення 13031 шт:
термін постачання 21-31 дні (днів)
4+93.79 грн
10+56.67 грн
100+37.45 грн
500+27.39 грн
1000+24.89 грн
2000+23.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 1ED020I12FTAXUMA2 Infineon Technologies Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874 Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 2677 шт:
термін постачання 21-31 дні (днів)
1+531.21 грн
10+395.24 грн
25+366.07 грн
100+313.51 грн
250+299.18 грн
500+290.55 грн
В кошику  од. на суму  грн.
S25FL032P0XMFA000 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA000
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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S25FL032P0XMFA003 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA003
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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S25FL032P0XNFA010 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA010
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S25FL032P0XNFA013 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA013
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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S25FL128LDPBHV030 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV030
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
товару немає в наявності
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S25FL128LDPBHV033 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV033
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
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S25FS128SAGNFI003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGNFI003
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FS128SDSBHM200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SDSBHM200
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S29GL01GT10FAI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FAI030
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
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S29GL01GT10FHI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI040
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S70FL01GSDSMFB010 download
S70FL01GSDSMFB010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
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S70FL01GSDSMFV010 download
S70FL01GSDSMFV010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
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S70KL1281DABHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHV023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KS1281DPBHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHV023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товару немає в наявності
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IPB60R060P7ATMA1 Infineon-IPB60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b797c047f
IPB60R060P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+362.72 грн
10+243.22 грн
100+191.87 грн
500+176.71 грн
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IPB60R080P7ATMA1 infineon-ipb60r080p7-ds-en.pdf
IPB60R080P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 1248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+347.78 грн
10+222.36 грн
100+158.23 грн
500+139.98 грн
В кошику  од. на суму  грн.
IPB60R099P7ATMA1 Infineon-IPB60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a8704aa0489
IPB60R099P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 1039 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.32 грн
10+197.74 грн
100+145.35 грн
500+117.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R120P7ATMA1 infineon-ipb60r120p7-ds-en.pdf
IPB60R120P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.09 грн
10+168.89 грн
100+118.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R280P7ATMA1 infineon-ipb60r280p7-ds-en.pdf
IPB60R280P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 5723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.30 грн
10+108.06 грн
100+73.76 грн
500+55.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB60R360P7ATMA1 infineon-ipb60r360p7-ds-en.pdf
IPB60R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.23 грн
10+92.24 грн
100+62.43 грн
500+46.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPL60R065P7AUMA1 Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36
IPL60R065P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 41A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
на замовлення 9635 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+481.41 грн
10+311.88 грн
100+229.20 грн
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IPL60R105P7AUMA1 infineon-ipl60r105p7-ds-en.pdf
IPL60R105P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
на замовлення 3069 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.88 грн
10+205.41 грн
100+145.39 грн
500+126.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R125P7AUMA1 Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42
IPL60R125P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.77 грн
10+166.89 грн
100+116.73 грн
500+96.42 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPL60R285P7AUMA1 infineon-ipl60r285p7-ds-en.pdf
IPL60R285P7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 285mOhm @ 3.8A, 10V
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 5920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.26 грн
10+82.01 грн
100+73.65 грн
500+62.57 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLE94106ESXUMA1 Infineon-TLE94106ES-DS-v01_00-EN.pdf?fileId=5546d46261ff577701621efb5c137b1a
TLE94106ESXUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
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TLE4276SVAKSA2 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276SVAKSA2
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4276GV50ATMA2 TLE4276_Rev2.8_1-10-18.pdf
TLE4276GV50ATMA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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ICE5AR0680BZSXKLA1 Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad
ICE5AR0680BZSXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.91 грн
10+104.39 грн
50+89.57 грн
100+79.74 грн
250+75.19 грн
500+72.44 грн
1000+69.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5ASAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5ASAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.36 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE5GSAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5GSAGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
на замовлення 3201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.55 грн
10+48.68 грн
25+43.86 грн
100+36.24 грн
250+33.89 грн
500+32.47 грн
1000+30.79 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5GR1680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR1680AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.78 грн
10+98.07 грн
25+89.29 грн
100+74.75 грн
250+70.44 грн
500+67.84 грн
1000+64.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5AR0680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR0680AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.15 грн
10+218.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DF450R12N2E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
В кошику  од. на суму  грн.
DF600R12N2E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
товару немає в наявності
В кошику  од. на суму  грн.
FD16001200R17HP4KB2BOSA1 Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e
FD16001200R17HP4KB2BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1600A 1050W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+99592.61 грн
В кошику  од. на суму  грн.
FF1200R17IP5BPSA1 Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e
FF1200R17IP5BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+45151.13 грн
В кошику  од. на суму  грн.
FF1800R12IE5BPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+63431.37 грн
В кошику  од. на суму  грн.
BGSA12UGL8E6327XTSA1 Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5
BGSA12UGL8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
на замовлення 29878 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.18 грн
11+31.73 грн
25+29.86 грн
100+25.65 грн
250+24.21 грн
500+23.19 грн
1000+21.87 грн
5000+19.88 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BTS70041EPPXUMA1 Infineon-BTS7004-1EPP-DS-v01_00-EN.pdf?fileId=5546d4626102d35a016147550a725555
BTS70041EPPXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over/Under Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.36 грн
10+113.42 грн
25+103.46 грн
100+86.85 грн
250+81.95 грн
500+79.00 грн
1000+75.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
BTS70802EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 23.1mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.75 грн
10+72.97 грн
25+66.21 грн
100+55.13 грн
250+51.79 грн
500+49.78 грн
1000+47.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1ED020I12FAXUMA2 1ED020I12FA_Rev3.0_05-21-13.pdf
1ED020I12FAXUMA2
Виробник: Infineon Technologies
Description: DGTL ISO 4.5KV 1CH GT DVR DSO20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20
Rise / Fall Time (Typ): 30ns, 50ns
Part Status: Obsolete
Number of Channels: 1
Voltage - Output Supply: 13V ~ 20V
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Part Status: Active
на замовлення 4276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.50 грн
12+28.37 грн
25+25.48 грн
100+20.84 грн
250+19.38 грн
500+18.50 грн
1000+17.48 грн
2500+16.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPN50R3K0CEATMA1 Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5
IPN50R3K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BGT24LTR11N16E6327XTSA1 Infineon-BGT24LTR11N16-DS-v01_01-EN.pdf?fileId=5546d4625696ed7601569d2ae3a9158a
BGT24LTR11N16E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF TXRX 16TSNP
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 24GHz ~ 24.25GHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 6dBm
Current - Receiving: 45mA
Current - Transmitting: 45mA
Supplier Device Package: PG-TSNP-16-9
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+570.22 грн
10+372.94 грн
100+287.19 грн
В кошику  од. на суму  грн.
IPD60R400CEAUMA1 Infineon-IPD60R400CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c83667001f0c
IPD60R400CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 14.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 10035 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.22 грн
10+67.62 грн
100+45.09 грн
500+33.23 грн
1000+30.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN50R1K4CEATMA1 Infineon-IPN50R1K4CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac894e25aa7
IPN50R1K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 6323 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.44 грн
10+33.97 грн
100+21.92 грн
500+15.71 грн
1000+14.14 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPN50R2K0CEATMA1 Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa
IPN50R2K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 3.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
на замовлення 8130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.97 грн
11+29.09 грн
100+18.69 грн
500+13.31 грн
1000+11.95 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
IPG20N10S4L35ATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1105pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 16µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.95 грн
10+82.25 грн
100+56.72 грн
500+42.21 грн
1000+39.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIRF8739L2TR auirf8739l2.pdf?fileId=5546d462533600a4015355b0e3241416
AUIRF8739L2TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 57A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 545A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 340W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 562 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17890 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N06S4L26AATMA1 Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177
IPG20N06S4L26AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2981 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.35 грн
10+73.69 грн
100+49.30 грн
500+36.46 грн
1000+33.30 грн
2000+32.79 грн
Мінімальне замовлення: 3
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AUIPS6031RTRL auips6031.pdf?fileId=5546d462533600a4015355a797f51311
AUIPS6031RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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IPD90N10S4L06ATMA1 Infineon-IPD90N10S4L_06-DS-v01_00-en.pdf?fileId=db3a3043372d5cc80137500063630512
IPD90N10S4L06ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 90A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.52 грн
10+125.73 грн
100+86.57 грн
500+66.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1EBN1001AEXUMA1 Infineon-1EBN1001AE-DS-v03_00-EN.pdf?fileId=5546d462503812bb01505fa4d89805a0
1EBN1001AEXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.38 грн
10+171.44 грн
25+157.20 грн
100+132.86 грн
250+125.87 грн
500+121.65 грн
1000+116.24 грн
Мінімальне замовлення: 2
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AUIRF5210STRL auirf5210s.pdf?fileId=5546d462533600a4015355acd8ce13c3
AUIRF5210STRL
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
IPD65R400CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 7984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.24 грн
10+64.58 грн
100+42.96 грн
500+31.60 грн
1000+28.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3046SDLATMA1 Infineon-BTS3046SDL-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aad821c9e4c21
BTS3046SDLATMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 16933 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.40 грн
10+106.14 грн
25+96.78 грн
100+81.13 грн
250+76.51 грн
500+73.73 грн
1000+70.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
AUIPS7081STRL auips7081.pdf?fileId=5546d462533600a4015355a7b8d5131e
AUIPS7081STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK-5
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BSC0504NSIATMA1 Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d
BSC0504NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
на замовлення 13031 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.79 грн
10+56.67 грн
100+37.45 грн
500+27.39 грн
1000+24.89 грн
2000+23.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1ED020I12FTAXUMA2 Infineon-1ED020I12FTA-DS-v03_00-EN.pdf?fileId=db3a30432e779412012e7b85bdb73874
1ED020I12FTAXUMA2
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO20
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-20-55
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Not For New Designs
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
на замовлення 2677 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+531.21 грн
10+395.24 грн
25+366.07 грн
100+313.51 грн
250+299.18 грн
500+290.55 грн
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