Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149641) > Сторінка 509 з 2495
| Фото | Назва | Виробник | Інформація |
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| FD600R12KF4NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 600APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A NTC Thermistor: No Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3900 W Current - Collector Cutoff (Max): 8 mA Input Capacitance (Cies) @ Vce: 45 nF @ 25 V |
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IRF7464TRPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 1.2A 8SO |
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| CYW89820BWMLGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 48WQFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -94.5dBm Mounting Type: Surface Mount, Wettable Flank Frequency: 2.4GHz Memory Size: 256kB Flash, 176kB RAM, 1MB ROM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.045V ~ 1.26V Protocol: Bluetooth v5.0 + EDR Data Rate (Max): 3Mbps Supplier Device Package: 48-WQFN (7x7) GPIO: 17 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, PCM, PWM, SPI, UART Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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| S6BP202A1GST2B00A | Infineon Technologies | Description: IC REG |
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CYT2B98CACR0AZSGST | Infineon Technologies |
Description: IC MCU 32BT 2.0625MB FLSH 176QFP Packaging: Tape & Reel (TR) Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 82x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 176-LQFP (24x24) Part Status: Active Number of I/O: 152 DigiKey Programmable: Not Verified |
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| CYT2B95BACR0AZEGST | Infineon Technologies |
Description: IC MCU 32BT 2.0625MB FLSH 100QFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 100MHz, 160MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 57x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
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| S25FL512SAGBHB213 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 24BGAPackaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Active Write Cycle Time - Word, Page: 750µs Memory Interface: SPI - Quad I/O Access Time: 6.5 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
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S27KS0642GABHM020 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
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S25FL256LDPNFA010 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 8WSONPackaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 60µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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S27KS0642GABHM023 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
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S25FL256LDPNFA013 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 8WSONPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 60µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
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S27KL0642GABHM023 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S27KL0642GABHM020 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CYAT71658-56LWS41 | Infineon Technologies |
Description: TrueTouchPackaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 56-QFN (8x8) Touchscreen: 2 Wire Capacitive Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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FF225R17ME4_B11 | Infineon Technologies |
Description: FF225R17 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-3-2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1500 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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CY8C6116BZI-F54 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 124BGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 DigiKey Programmable: Not Verified |
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| PTFA212001EV4R0XTMA1 | Infineon Technologies |
Description: RF MOSFET LDMOS 30V H-36260-2 |
товару немає в наявності |
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| PTFA192001EV4R0XTMA1 | Infineon Technologies |
Description: RF MOSFET LDMOS 30V H-36260-2 |
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CY9BF168MPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TJ) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x12b SAR; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Part Status: Active Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 1078 шт: термін постачання 21-31 дні (днів) |
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| CY7C64613-80NC | Infineon Technologies |
Description: IC MCU USB EZ FX 8K RAM 80QFPPackaging: Bag Package / Case: 80-BQFP Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 8K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C646xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 80-PQFP (14x14) Part Status: Obsolete Number of I/O: 32 DigiKey Programmable: Not Verified |
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| 1SD210F2FZ600R65KF1NPSA1 | Infineon Technologies |
Description: MODULE IGBT DRIVER Packaging: Tray Part Status: Obsolete |
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| 1SD210F2MBN750H65ONPSA1 | Infineon Technologies | Description: MODULE IGBT DRIVER |
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CY2305CSXI-1 | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1032 шт: термін постачання 21-31 дні (днів) |
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S25HL02GTDPBHV050 | Infineon Technologies |
Description: IC FLASH 2GBIT SPI/DUAL 24BGAPackaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: PG-BGA-24-805 Part Status: Active Memory Interface: SPI - Dual I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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CY7C1021D-10VXI | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 44SOJPackaging: Tube Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
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IPD50R520CPBTMA1 | Infineon Technologies |
Description: LOW POWER_LEGACY |
товару немає в наявності |
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IPSA70R750P7SAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 6.5A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3447AMTRPBFAUMA2 | Infineon Technologies |
Description: IC REG BUCK ADJ 25A VIQFN-29Packaging: Tape & Reel (TR) Package / Case: 29-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-VIQFN-29 Synchronous Rectifier: Yes Voltage - Output (Max): 7.5V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.6V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3447AMTRPBFAUMA2 | Infineon Technologies |
Description: IC REG BUCK ADJ 25A VIQFN-29Packaging: Cut Tape (CT) Package / Case: 29-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-VIQFN-29 Synchronous Rectifier: Yes Voltage - Output (Max): 7.5V Voltage - Input (Min): 2V Voltage - Output (Min/Fixed): 0.6V Part Status: Active |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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2EDB7259KXUMA1 | Infineon Technologies |
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGAPackaging: Tape & Reel (TR) Package / Case: 13-LGA Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 13-LGA (5x5) Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Part Status: Active Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDB7259KXUMA1 | Infineon Technologies |
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGAPackaging: Cut Tape (CT) Package / Case: 13-LGA Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 13-LGA (5x5) Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Part Status: Active Number of Channels: 2 |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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2EDB8259KXUMA1 | Infineon Technologies |
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGAPackaging: Tape & Reel (TR) Package / Case: 13-LGA Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 13-LGA (5x5) Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Part Status: Active Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDB8259KXUMA1 | Infineon Technologies |
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGAPackaging: Cut Tape (CT) Package / Case: 13-LGA Mounting Type: Surface Mount Current - Peak Output: 5A, 9A Technology: Magnetic Coupling Current - Output High, Low: 9A, 5A Voltage - Isolation: 2500Vrms Approval Agency: UL Supplier Device Package: 13-LGA (5x5) Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 38ns, 38ns Part Status: Active Number of Channels: 2 |
на замовлення 3191 шт: термін постачання 21-31 дні (днів) |
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CY8C4548AZI-S475 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 64TQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 53 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 56DN06ELEMPRXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 6400A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPD048N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 58µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V |
на замовлення 10589 шт: термін постачання 21-31 дні (днів) |
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CY8CMBR2010-24LQXIT | Infineon Technologies |
Description: IC MBR 10 BUTTON 10 LED 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Current - Supply: 3.4mA Number of Inputs: Up to 10 Supplier Device Package: 32-QFN (5x5) Proximity Detection: No LED Driver Channels: Up to 10 Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9BF466RPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 120LQFPPackaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Part Status: Active Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4284DV15ATMA1 | Infineon Technologies |
Description: IC REG LINEAR 1.5V 1A TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 1.6 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 1.5V PSRR: 65dB (120Hz) Voltage Dropout (Max): 1.4V @ 1A Protection Features: Over Current, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2569 шт: термін постачання 21-31 дні (днів) |
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AUIRLR3636TRL | Infineon Technologies |
Description: MOSFET N-CH 60V 99A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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CY8C4147AZI-S455 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64TQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 54 DigiKey Programmable: Not Verified |
на замовлення 1598 шт: термін постачання 21-31 дні (днів) |
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CY7C65214D-32LTXI | Infineon Technologies |
Description: USB FULL-SPEED PERIPHERALSPackaging: Tray Package / Case: 32-VFQFN Exposed Pad Function: Bridge Interface: GPIO, SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V Current - Supply: 18mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 32-QFN (5x5) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4700 шт: термін постачання 21-31 дні (днів) |
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FP150R07N3E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 150A 430WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
на замовлення 164 шт: термін постачання 21-31 дні (днів) |
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FP150R07N3E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 150A 430WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 430 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
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CY15B104Q-LHXI | Infineon Technologies |
Description: IC FRAM 4MBIT SPI 40MHZ 8DFNPackaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (5x6) Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
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CYBT-343026-EVAL | Infineon Technologies |
Description: EVAL BLUETOOTH WICED MODULEPackaging: Bulk For Use With/Related Products: CYBT-343026-01 Frequency: 2.4GHz Type: Transceiver; Bluetooth® Smart Ready 4.x Dual Mode (BLE) Supplied Contents: Board(s) Part Status: Active Contents: Board(s) Utilized IC / Part: CYBT-343026-01 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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IPB65R190CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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IPB65R190CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 979 шт: термін постачання 21-31 дні (днів) |
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IPW65R190E6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 20.2A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 730µA Supplier Device Package: PG-TO247-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V |
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IPI65R190C6XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 20.2A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 730µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V |
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IPW65R190CFDAFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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IPT65R190CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drain to Source Voltage (Vdss): 650 V |
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CY8C5668LTI-LP014 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 2x12b; D/A 4x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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S25FL256SDSMFB010 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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S25FL128LAGMFI001 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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CY62148ELL-45ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tray Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 553 шт: термін постачання 21-31 дні (днів) |
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CY62167DV30LL-55ZXI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48TSOP IPackaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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CY7C1021CV33-10VXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 44SOJPackaging: Tube Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
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CY7C109B-15ZXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Bag Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
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CY62157DV30LL-55BVXI | Infineon Technologies |
Description: IC SRAM 8MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. |
| FD600R12KF4NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
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| IRF7464TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 1.2A 8SO
Description: MOSFET N-CH 200V 1.2A 8SO
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| CYW89820BWMLGT |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.045V ~ 1.26V
Protocol: Bluetooth v5.0 + EDR
Data Rate (Max): 3Mbps
Supplier Device Package: 48-WQFN (7x7)
GPIO: 17
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PWM, SPI, UART
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC RF TXRX+MCU BLE 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -94.5dBm
Mounting Type: Surface Mount, Wettable Flank
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.045V ~ 1.26V
Protocol: Bluetooth v5.0 + EDR
Data Rate (Max): 3Mbps
Supplier Device Package: 48-WQFN (7x7)
GPIO: 17
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PWM, SPI, UART
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S6BP202A1GST2B00A |
Виробник: Infineon Technologies
Description: IC REG
Description: IC REG
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| CYT2B98CACR0AZSGST |
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 152
DigiKey Programmable: Not Verified
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| CYT2B95BACR0AZEGST |
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
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| S25FL512SAGBHB213 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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| S27KS0642GABHM020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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| S25FL256LDPNFA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S27KS0642GABHM023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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| S25FL256LDPNFA013 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 60µs, 1.2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| S27KL0642GABHM023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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| S27KL0642GABHM020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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| CYAT71658-56LWS41 |
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Виробник: Infineon Technologies
Description: TrueTouch
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: TrueTouch
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 891.44 грн |
| 10+ | 674.83 грн |
| 25+ | 628.96 грн |
| 100+ | 542.91 грн |
| FF225R17ME4_B11 |
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Виробник: Infineon Technologies
Description: FF225R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: FF225R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3-2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 10864.89 грн |
| CY8C6116BZI-F54 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
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| PTFA212001EV4R0XTMA1 |
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Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36260-2
Description: RF MOSFET LDMOS 30V H-36260-2
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| PTFA192001EV4R0XTMA1 |
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Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36260-2
Description: RF MOSFET LDMOS 30V H-36260-2
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| CY9BF168MPMC-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 927.13 грн |
| 10+ | 702.08 грн |
| 25+ | 654.57 грн |
| 100+ | 565.27 грн |
| 250+ | 541.90 грн |
| 500+ | 527.82 грн |
| CY7C64613-80NC |
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Виробник: Infineon Technologies
Description: IC MCU USB EZ FX 8K RAM 80QFP
Packaging: Bag
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C646xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 80-PQFP (14x14)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
Description: IC MCU USB EZ FX 8K RAM 80QFP
Packaging: Bag
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 8K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C646xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 80-PQFP (14x14)
Part Status: Obsolete
Number of I/O: 32
DigiKey Programmable: Not Verified
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| 1SD210F2MBN750H65ONPSA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT DRIVER
Description: MODULE IGBT DRIVER
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| CY2305CSXI-1 |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 474.77 грн |
| 10+ | 353.12 грн |
| 97+ | 305.52 грн |
| S25HL02GTDPBHV050 |
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Виробник: Infineon Technologies
Description: IC FLASH 2GBIT SPI/DUAL 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-805
Part Status: Active
Memory Interface: SPI - Dual I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT SPI/DUAL 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-805
Part Status: Active
Memory Interface: SPI - Dual I/O
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
на замовлення 46 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2064.25 грн |
| 10+ | 1839.69 грн |
| 25+ | 1781.00 грн |
| CY7C1021D-10VXI | ![]() |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 231.57 грн |
| 10+ | 197.82 грн |
| 25+ | 188.63 грн |
| 50+ | 170.79 грн |
| 100+ | 164.79 грн |
| 250+ | 157.14 грн |
| IPD50R520CPBTMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Description: LOW POWER_LEGACY
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| IPSA70R750P7SAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
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| IR3447AMTRPBFAUMA2 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A VIQFN-29
Packaging: Tape & Reel (TR)
Package / Case: 29-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-VIQFN-29
Synchronous Rectifier: Yes
Voltage - Output (Max): 7.5V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Description: IC REG BUCK ADJ 25A VIQFN-29
Packaging: Tape & Reel (TR)
Package / Case: 29-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-VIQFN-29
Synchronous Rectifier: Yes
Voltage - Output (Max): 7.5V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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| IR3447AMTRPBFAUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A VIQFN-29
Packaging: Cut Tape (CT)
Package / Case: 29-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-VIQFN-29
Synchronous Rectifier: Yes
Voltage - Output (Max): 7.5V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Description: IC REG BUCK ADJ 25A VIQFN-29
Packaging: Cut Tape (CT)
Package / Case: 29-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-VIQFN-29
Synchronous Rectifier: Yes
Voltage - Output (Max): 7.5V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 333.67 грн |
| 10+ | 244.18 грн |
| 25+ | 224.85 грн |
| 2EDB7259KXUMA1 |
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Виробник: Infineon Technologies
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Tape & Reel (TR)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Tape & Reel (TR)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
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| 2EDB7259KXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Cut Tape (CT)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Cut Tape (CT)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.63 грн |
| 10+ | 94.63 грн |
| 25+ | 86.00 грн |
| 100+ | 71.82 грн |
| 250+ | 67.58 грн |
| 2EDB8259KXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Tape & Reel (TR)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Tape & Reel (TR)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
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| 2EDB8259KXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Cut Tape (CT)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
Description: DGTL ISO 2.5KV 2CH GT DVR 13LGA
Packaging: Cut Tape (CT)
Package / Case: 13-LGA
Mounting Type: Surface Mount
Current - Peak Output: 5A, 9A
Technology: Magnetic Coupling
Current - Output High, Low: 9A, 5A
Voltage - Isolation: 2500Vrms
Approval Agency: UL
Supplier Device Package: 13-LGA (5x5)
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 38ns, 38ns
Part Status: Active
Number of Channels: 2
на замовлення 3191 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.63 грн |
| 10+ | 94.63 грн |
| 25+ | 86.00 грн |
| 100+ | 71.82 грн |
| 250+ | 67.58 грн |
| 500+ | 65.03 грн |
| 1000+ | 61.89 грн |
| CY8C4548AZI-S475 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
DigiKey Programmable: Not Verified
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| 56DN06ELEMPRXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 6400A
Description: DIODE GEN PURP 600V 6400A
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| IPD048N06L3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
на замовлення 10589 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.46 грн |
| 10+ | 81.93 грн |
| 100+ | 55.16 грн |
| 500+ | 40.98 грн |
| 1000+ | 37.82 грн |
| CY8CMBR2010-24LQXIT |
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Виробник: Infineon Technologies
Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MBR 10 BUTTON 10 LED 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.4mA
Number of Inputs: Up to 10
Supplier Device Package: 32-QFN (5x5)
Proximity Detection: No
LED Driver Channels: Up to 10
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| CY9BF466RPMC-G-MNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
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| TLE4284DV15ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 1.5V 1A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.5V 1A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 1.5V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.63 грн |
| 10+ | 94.63 грн |
| 25+ | 85.97 грн |
| 100+ | 71.80 грн |
| 250+ | 67.56 грн |
| 500+ | 65.01 грн |
| 1000+ | 61.87 грн |
| AUIRLR3636TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 99A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 99A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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| CY8C4147AZI-S455 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 1598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 365.21 грн |
| 10+ | 269.36 грн |
| 25+ | 248.73 грн |
| 160+ | 214.52 грн |
| CY7C65214D-32LTXI |
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Виробник: Infineon Technologies
Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.62 грн |
| 10+ | 225.79 грн |
| 25+ | 213.41 грн |
| 80+ | 173.58 грн |
| 230+ | 164.67 грн |
| 490+ | 147.76 грн |
| 980+ | 122.58 грн |
| 2450+ | 116.45 грн |
| FP150R07N3E4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Description: IGBT MOD 650V 150A 430W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 8976.05 грн |
| FP150R07N3E4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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| CY15B104Q-LHXI |
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Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 4MBIT SPI 40MHZ 8DFN
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 241 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1988.71 грн |
| 10+ | 1772.15 грн |
| 25+ | 1715.72 грн |
| 74+ | 1548.15 грн |
| 148+ | 1509.22 грн |
| CYBT-343026-EVAL |
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Виробник: Infineon Technologies
Description: EVAL BLUETOOTH WICED MODULE
Packaging: Bulk
For Use With/Related Products: CYBT-343026-01
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart Ready 4.x Dual Mode (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: CYBT-343026-01
Description: EVAL BLUETOOTH WICED MODULE
Packaging: Bulk
For Use With/Related Products: CYBT-343026-01
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart Ready 4.x Dual Mode (BLE)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: CYBT-343026-01
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3664.51 грн |
| IPB65R190CFDAATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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| IPB65R190CFDAATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 312.09 грн |
| 10+ | 197.98 грн |
| 100+ | 139.90 грн |
| 500+ | 120.33 грн |
| IPW65R190E6FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Description: MOSFET N-CH 650V 20.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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| IPI65R190C6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
Description: MOSFET N-CH 650V 20.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
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| IPW65R190CFDAFKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| IPT65R190CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
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| CY8C5668LTI-LP014 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 196 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1950.53 грн |
| 10+ | 1508.95 грн |
| 25+ | 1416.73 грн |
| 80+ | 1247.33 грн |
| S25FL256SDSMFB010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 532.04 грн |
| 10+ | 476.05 грн |
| 25+ | 461.47 грн |
| 50+ | 422.78 грн |
| 240+ | 405.84 грн |
| S25FL128LAGMFI001 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 229 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.01 грн |
| 10+ | 175.04 грн |
| 47+ | 161.59 грн |
| 94+ | 146.29 грн |
| 141+ | 143.25 грн |
| CY62148ELL-45ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 553 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 423.31 грн |
| 10+ | 380.13 грн |
| 25+ | 368.69 грн |
| 50+ | 337.90 грн |
| 117+ | 327.99 грн |
| 351+ | 315.30 грн |
| CY62167DV30LL-55ZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 960.33 грн |
| 10+ | 858.66 грн |
| 25+ | 831.95 грн |
| 96+ | 744.27 грн |
| 192+ | 725.74 грн |
| 288+ | 715.02 грн |
| 576+ | 685.49 грн |
| CY7C1021CV33-10VXC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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| CY7C109B-15ZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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| CY62157DV30LL-55BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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