Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149513) > Сторінка 526 з 2492
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CY8C4025LQI-S412 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 4978 шт: термін постачання 21-31 дні (днів) |
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MB9BF516SPMC-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY9BF515NBGL-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 416KB FLSH 112PFBGAPackaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 416KB (416K x 8) RAM Size: 48K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Part Status: Obsolete Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB180P04P4L02ATMA2 | Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10959 шт: термін постачання 21-31 дні (днів) |
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IPB015N06NF2SATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB015N06NF2SATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V |
на замовлення 407 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90TFA010 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL256S90GHI010 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56FBGA |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90GHI010 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL256S90TAA023 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL256S90FHA020 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL256S90FHA023 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE92613BQXXUMA2 | Infineon Technologies |
Description: OPTIREG SYST BASIS CHIPSPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Applications: System Basis Chip Current - Supply: 3.5mA Supplier Device Package: PG-VQFN-48-79 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS900R08A2P2B32BOSA1 | Infineon Technologies |
Description: IGBT MODULE PACK2 DRV HYBRID2-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A NTC Thermistor: Yes Supplier Device Package: AG-HYBRID2-1 Part Status: Obsolete Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 1546 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 105 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IFX25001MEV25 | Infineon Technologies |
Description: IC REG LINEAR FIXED LDO REGPackaging: Bulk Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4-21 Voltage - Output (Min/Fixed): 2.5V PSRR: 60dB (100Hz) Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
на замовлення 8694 шт: термін постачання 21-31 дні (днів) |
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IPB014N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB014N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MB96F338USAPMC-GS-N2E2 | Infineon Technologies |
Description: IC MCU 16BIT 544KB FLASH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 544KB (544K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: F²MC-16FX Data Converters: A/D 36x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART, USB Peripherals: DMA, LVD, LVR, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Obsolete Number of I/O: 120 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYBLE-343072-02 | Infineon Technologies |
Description: RF TXRX MOD BT TH SMDPackaging: Tape & Reel (TR) Package / Case: 43-SMD Module Sensitivity: -94.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 512kB Flash, 384kB RAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5V ~ 3.6V Power - Output: 12dBm Data Rate: 6Mbps Protocol: Bluetooth v5.2 Current - Receiving: 8mA Current - Transmitting: 18mA Antenna Type: Integrated, Trace Utilized IC / Part: CYW20835 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: ADC, I2C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CYBLE-343072-02 | Infineon Technologies |
Description: RF TXRX MOD BT TH SMDPackaging: Cut Tape (CT) Package / Case: 43-SMD Module Sensitivity: -94.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 512kB Flash, 384kB RAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5V ~ 3.6V Power - Output: 12dBm Data Rate: 6Mbps Protocol: Bluetooth v5.2 Current - Receiving: 8mA Current - Transmitting: 18mA Antenna Type: Integrated, Trace Utilized IC / Part: CYW20835 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: ADC, I2C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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S80KS2562GABHI020 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
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S80KS2563GABHB020 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 636 шт: термін постачання 21-31 дні (днів) |
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S80KS2562GABHA020 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 647 шт: термін постачання 21-31 дні (днів) |
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S80KS2562GABHV020 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 308 шт: термін постачання 21-31 дні (днів) |
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S80KS2563GABHV020 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
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S80KS2563GABHM020 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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S80KS2562GABHB020 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 672 шт: термін постачання 21-31 дні (днів) |
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S80KS2562GABHM020 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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S80KS2563GABHA020 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 598 шт: термін постачання 21-31 дні (днів) |
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S79FL512SDSMFVG00 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2563GABHA023 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2563GABHI023 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2562GABHA023 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2562GABHB023 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2562GABHI023 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S80KS2563GABHM023 | Infineon Technologies |
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
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S80KS2562GABHV023 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB180N06S4H1ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S29GL256P11TFI010 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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CYBL10461-56LQXI | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 56QFN Packaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.8V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.1 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 1Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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CY7C65216D-32LTXI | Infineon Technologies |
Description: USB FULL-SPEED PERIPHERALSPackaging: Tray Package / Case: 32-VFQFN Exposed Pad Function: Bridge Interface: GPIO, I2C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V Current - Supply: 18mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 32-QFN (5x5) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4898 шт: термін постачання 21-31 дні (днів) |
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ICE3RBR1765JGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V Supplier Device Package: PG-DSO-12-19 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 41.5 W |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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IPT013N08NM5LF | Infineon Technologies |
Description: SINGLE N-CHANNEL LINEAR FET 80VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V Power Dissipation (Max): 3.1W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPT013N08NM5LF | Infineon Technologies |
Description: SINGLE N-CHANNEL LINEAR FET 80VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V Power Dissipation (Max): 3.1W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPT012N06NATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 240A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 143µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPT012N06NATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 240A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 143µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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IKZA75N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 109A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: PG-TO247-4-U02 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/359ns Switching Energy: 2.01mJ (on), 1.76mJ (off) Gate Charge: 550 nC Part Status: Active Current - Collector (Ic) (Max): 109 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 549 W |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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CY3250-21X23-POD | Infineon Technologies | Description: PSOC POD FOR CY8C21X23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C64113-PVC | Infineon Technologies |
Description: IC MCU 8K FULL SPEED USB 48SSOPPackaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: I2C, USB, HAPI RAM Size: 256 x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4V ~ 5.25V Controller Series: CY7C641xx Program Memory Type: OTP (8kB) Applications: USB Microcontroller Core Processor: M8C Supplier Device Package: 48-SSOP Part Status: Obsolete Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C27643-24LFXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 48QFNPackaging: Tube Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Obsolete Number of I/O: 44 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1320KV18-250BZI | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Active Memory Interface: Parallel Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 472 шт: термін постачання 21-31 дні (днів) |
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CY7C1325H-133AXI | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 100TQFP |
на замовлення 157 шт: термін постачання 21-31 дні (днів) |
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CY7C1327S-166AXC | Infineon Technologies | Description: IC SRAM 4.5MBIT PARALLEL 100TQFP |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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CY7C1324S-133AXC | Infineon Technologies | Description: IC SRAM 2MBIT PARALLEL 100TQFP |
на замовлення 1815 шт: термін постачання 21-31 дні (днів) |
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CY7C1325G-100AXC | Infineon Technologies | Description: IC SRAM 4.5MBIT PAR 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1328S-133AXI | Infineon Technologies | Description: IC SRAM 4.5MBIT PARALLEL 100TQFP |
на замовлення 1708 шт: термін постачання 21-31 дні (днів) |
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CY7C1329H-133AXC | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 100TQFP |
на замовлення 489 шт: термін постачання 21-31 дні (днів) |
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CY7C1329H-133AXC | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1325G-100AXI | Infineon Technologies | Description: IC SRAM 4.5MBIT PAR 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1325G-133BGC | Infineon Technologies | Description: IC SRAM 4.5MBIT PAR 119PBGA |
товару немає в наявності |
В кошику од. на суму грн. |
| CY8C4025LQI-S412 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 4978 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.08 грн |
| 10+ | 165.57 грн |
| 25+ | 151.78 грн |
| 100+ | 128.14 грн |
| 490+ | 117.32 грн |
| 980+ | 113.92 грн |
| 1470+ | 110.38 грн |
| 2940+ | 107.93 грн |
| MB9BF516SPMC-GK7E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144LQFP
Description: IC MCU 32BIT 512KB FLASH 144LQFP
товару немає в наявності
В кошику
од. на суму грн.
| CY9BF515NBGL-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 416KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 416KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| IPB180P04P4L02ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10959 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.06 грн |
| 10+ | 189.19 грн |
| 100+ | 133.22 грн |
| 500+ | 113.16 грн |
| IPB015N06NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
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В кошику
од. на суму грн.
| IPB015N06NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
на замовлення 407 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.16 грн |
| 10+ | 137.36 грн |
| 100+ | 98.40 грн |
| S29GL256S90TFA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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| S29GL256S90GHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56FBGA
Description: IC FLASH 256MBIT PARALLEL 56FBGA
на замовлення 333 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 97+ | 249.56 грн |
| S29GL256S90GHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56FBGA
Description: IC FLASH 256MBIT PARALLEL 56FBGA
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| S29GL256S90TAA023 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Description: IC FLASH 256MBIT PARALLEL 56TSOP
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| S29GL256S90FHA020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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| S29GL256S90FHA023 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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| TLE92613BQXXUMA2 |
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Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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| FS900R08A2P2B32BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Description: IGBT MODULE PACK2 DRV HYBRID2-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID2-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 550 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1546 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
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| IFX25001MEV25 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
на замовлення 8694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1039+ | 22.52 грн |
| IPB014N04NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
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| IPB014N04NF2SATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
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| MB96F338USAPMC-GS-N2E2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 544KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 36x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART, USB
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 544KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 36x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART, USB
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Obsolete
Number of I/O: 120
DigiKey Programmable: Not Verified
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| CYBLE-343072-02 |
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Виробник: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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| CYBLE-343072-02 |
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Виробник: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 43-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Integrated, Trace
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 618.26 грн |
| 10+ | 460.46 грн |
| 25+ | 419.54 грн |
| 100+ | 346.26 грн |
| 250+ | 320.95 грн |
| S80KS2562GABHI020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 506.70 грн |
| 10+ | 453.90 грн |
| 25+ | 440.21 грн |
| 50+ | 403.39 грн |
| 100+ | 393.69 грн |
| S80KS2563GABHB020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 636 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 461.57 грн |
| 10+ | 413.31 грн |
| 25+ | 400.71 грн |
| 50+ | 367.13 грн |
| 100+ | 358.24 грн |
| 338+ | 342.81 грн |
| S80KS2562GABHA020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 647 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 579.94 грн |
| 10+ | 519.51 грн |
| 25+ | 503.75 грн |
| 50+ | 461.56 грн |
| 100+ | 450.40 грн |
| 338+ | 431.04 грн |
| S80KS2562GABHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 308 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 545.87 грн |
| 10+ | 488.67 грн |
| 25+ | 473.83 грн |
| 50+ | 434.16 грн |
| 100+ | 423.68 грн |
| S80KS2563GABHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 545.87 грн |
| 10+ | 488.67 грн |
| 25+ | 473.83 грн |
| 50+ | 434.16 грн |
| 100+ | 423.68 грн |
| S80KS2563GABHM020 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 664.25 грн |
| 10+ | 594.30 грн |
| 25+ | 576.14 грн |
| 50+ | 527.83 грн |
| 100+ | 515.03 грн |
| 338+ | 492.82 грн |
| S80KS2562GABHB020 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 461.57 грн |
| 10+ | 413.31 грн |
| 25+ | 400.71 грн |
| 50+ | 367.13 грн |
| 100+ | 358.24 грн |
| 338+ | 342.81 грн |
| S80KS2562GABHM020 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 664.25 грн |
| S80KS2563GABHA020 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 579.94 грн |
| 10+ | 519.51 грн |
| 25+ | 503.75 грн |
| 50+ | 461.56 грн |
| 100+ | 450.40 грн |
| 338+ | 431.04 грн |
| S79FL512SDSMFVG00 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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| S80KS2563GABHA023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| S80KS2563GABHI023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| S80KS2562GABHA023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| S80KS2562GABHB023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| S80KS2562GABHI023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| S80KS2563GABHM023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| S80KS2562GABHV023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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| IPB180N06S4H1ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
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| S29GL256P11TFI010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 761.33 грн |
| 10+ | 680.98 грн |
| 25+ | 660.05 грн |
| 91+ | 591.85 грн |
| CYBL10461-56LQXI |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.1
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 1Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 476.90 грн |
| 10+ | 351.64 грн |
| 25+ | 324.81 грн |
| 80+ | 280.90 грн |
| CY7C65216D-32LTXI |
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Виробник: Infineon Technologies
Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB FULL-SPEED PERIPHERALS
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Function: Bridge
Interface: GPIO, I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 3.15V ~ 3.45V, 4.35V ~ 5.25V, 2V ~ 5.5V
Current - Supply: 18mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4898 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.85 грн |
| 10+ | 229.37 грн |
| 25+ | 216.82 грн |
| 80+ | 176.35 грн |
| 230+ | 167.31 грн |
| 490+ | 150.12 грн |
| 980+ | 124.54 грн |
| 2450+ | 118.31 грн |
| ICE3RBR1765JGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 41.5 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 41.5 W
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.84 грн |
| 10+ | 111.53 грн |
| 25+ | 101.65 грн |
| 100+ | 85.28 грн |
| 250+ | 80.44 грн |
| 500+ | 77.52 грн |
| 1000+ | 73.89 грн |
| IPT013N08NM5LF |
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Виробник: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
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| IPT013N08NM5LF |
![]() |
Виробник: Infineon Technologies
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
Description: SINGLE N-CHANNEL LINEAR FET 80V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
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| IPT012N06NATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
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| IPT012N06NATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
Description: MOSFET N-CH 60V 240A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 143µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 30 V
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 538.21 грн |
| 10+ | 349.34 грн |
| 100+ | 253.72 грн |
| 500+ | 203.74 грн |
| IKZA75N120CH7XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 109A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/359ns
Switching Energy: 2.01mJ (on), 1.76mJ (off)
Gate Charge: 550 nC
Part Status: Active
Current - Collector (Ic) (Max): 109 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
Description: IGBT TRENCH FS 1200V 109A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/359ns
Switching Energy: 2.01mJ (on), 1.76mJ (off)
Gate Charge: 550 nC
Part Status: Active
Current - Collector (Ic) (Max): 109 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 549 W
на замовлення 226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 677.87 грн |
| 30+ | 383.95 грн |
| 120+ | 324.93 грн |
| CY3250-21X23-POD |
Виробник: Infineon Technologies
Description: PSOC POD FOR CY8C21X23
Description: PSOC POD FOR CY8C21X23
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| CY7C64113-PVC |
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Виробник: Infineon Technologies
Description: IC MCU 8K FULL SPEED USB 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C641xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8K FULL SPEED USB 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: CY7C641xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Part Status: Obsolete
Number of I/O: 36
DigiKey Programmable: Not Verified
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| CY8C27643-24LFXI | ![]() |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
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| CY7C1320KV18-250BZI |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 929.09 грн |
| CY7C1325H-133AXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Description: IC SRAM 4.5MBIT PAR 100TQFP
на замовлення 157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 53+ | 462.23 грн |
| CY7C1327S-166AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
на замовлення 333 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 53+ | 462.23 грн |
| CY7C1324S-133AXC |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Description: IC SRAM 2MBIT PARALLEL 100TQFP
на замовлення 1815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 429.31 грн |
| CY7C1325G-100AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Description: IC SRAM 4.5MBIT PAR 100TQFP
товару немає в наявності
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| CY7C1328S-133AXI |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
на замовлення 1708 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 43+ | 566.53 грн |
| CY7C1329H-133AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Description: IC SRAM 2MBIT PARALLEL 100TQFP
на замовлення 489 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 184.80 грн |
| CY7C1329H-133AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Description: IC SRAM 2MBIT PARALLEL 100TQFP
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| CY7C1325G-100AXI |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Description: IC SRAM 4.5MBIT PAR 100TQFP
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| CY7C1325G-133BGC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 119PBGA
Description: IC SRAM 4.5MBIT PAR 119PBGA
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