Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119536) > Сторінка 1993 з 1993
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FS75R12W2T4B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-EASY2B-2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 375W Technology: EasyPACK™ 2B Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PVT412PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA Max. operating current: 140mA On-state resistance: 27Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 1800 шт: термін постачання 14-30 дні (днів) |
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IPP120N20NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ FD |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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BAS4007E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double independent Max. forward voltage: 1V Max. forward impulse current: 0.2A Power dissipation: 0.25W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ018NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Case: PG-TSDSON-8 On-state resistance: 1.8mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Drain current: 40A Power dissipation: 69W Polarisation: unipolar |
на замовлення 4970 шт: термін постачання 14-30 дні (днів) |
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| BCR166E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 70 Mounting: SMD |
на замовлення 24000 шт: термін постачання 14-30 дні (днів) |
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BGT24MTR12E6327XUMA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - othersDescription: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C Supply voltage: 3.135...3.465V DC Interface: SPI Frequency: 24...24.25GHz Case: VQFN32 Operating temperature: -40...105°C DC supply current: 210mA Number of transmitters: 1 Number of receivers: 2 Kind of integrated circuit: MMIC; RF transceiver Noise Figure: 12dB Open-loop gain: 26dB Kind of package: reel; tape Type of integrated circuit: interface Mounting: SMD |
на замовлення 475 шт: термін постачання 14-30 дні (днів) |
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BGT24LTR11N16E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - othersDescription: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape Supply voltage: 3.2...3.4V DC Frequency: 24...24.25GHz Case: TSNP16 Operating temperature: -40...85°C DC supply current: 45mA Number of transmitters: 1 Number of receivers: 1 Kind of integrated circuit: MMIC; RF transceiver Noise Figure: 10dB Open-loop gain: 26dB Kind of package: reel; tape Type of integrated circuit: interface Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BGSX22G5A10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz Type of integrated circuit: RF switch Output configuration: DPDT Number of channels: 2 Case: ATSLP-10-5 Supply voltage: 1.65...3.4V DC Mounting: SMD Bandwidth: 0.1...6GHz Application: telecommunication |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BCW68GE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SC59 Current gain: 160 Mounting: SMD Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAT1502ELSE6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching Type of diode: Schottky switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTN8982TA | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Topology: MOSFET half-bridge Technology: NovalithIC™ Case: PG-TO263-7 Kind of package: reel; tape Mounting: SMD Output current: -44...50A Operating temperature: -40...150°C On-state resistance: 10mΩ Number of channels: 1 Operating voltage: 5.5...40V DC Kind of integrated circuit: IMC; motor controller |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BTN8982TAAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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IRFR3910TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCW68FE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BCW68HE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar Type of transistor: PNP Polarisation: bipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| FS75R12W2T4B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: AG-EASY2B-2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 375W
Technology: EasyPACK™ 2B
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| PVT412PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 27Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 140mA
On-state resistance: 27Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 311.00 грн |
| 150+ | 259.49 грн |
| IPP120N20NFDAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 84A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 451.63 грн |
| BAS4007E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
товару немає в наявності
В кошику
од. на суму грн.
| BSZ018NE2LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 69W; PG-TSDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TSDSON-8
On-state resistance: 1.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 69W
Polarisation: unipolar
на замовлення 4970 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.11 грн |
| 10+ | 52.74 грн |
| 20+ | 51.06 грн |
| BCR166E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 70
Mounting: SMD
на замовлення 24000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.00 грн |
| BGT24MTR12E6327XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Supply voltage: 3.135...3.465V DC
Interface: SPI
Frequency: 24...24.25GHz
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 210mA
Number of transmitters: 1
Number of receivers: 2
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 12dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
на замовлення 475 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 497.60 грн |
| 3+ | 372.49 грн |
| 5+ | 353.24 грн |
| 10+ | 344.03 грн |
| 25+ | 334.83 грн |
| 50+ | 325.62 грн |
| 100+ | 320.60 грн |
| BGT24LTR11N16E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; TSNP16; -40÷85°C; reel,tape
Supply voltage: 3.2...3.4V DC
Frequency: 24...24.25GHz
Case: TSNP16
Operating temperature: -40...85°C
DC supply current: 45mA
Number of transmitters: 1
Number of receivers: 1
Kind of integrated circuit: MMIC; RF transceiver
Noise Figure: 10dB
Open-loop gain: 26dB
Kind of package: reel; tape
Type of integrated circuit: interface
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BGSX22G5A10E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: DPDT
Number of channels: 2
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Category: Analog multiplexers and switches
Description: IC: RF switch; DPDT; Ch: 2; ATSLP-10-5; 1.65÷3.4VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: DPDT
Number of channels: 2
Case: ATSLP-10-5
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
товару немає в наявності
В кошику
од. на суму грн.
| BCW68GE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 800mA; 330mW; SC59
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 200MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BAT1502ELSE6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
товару немає в наявності
В кошику
од. на суму грн.
| BTN8982TA |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Technology: NovalithIC™
Case: PG-TO263-7
Kind of package: reel; tape
Mounting: SMD
Output current: -44...50A
Operating temperature: -40...150°C
On-state resistance: 10mΩ
Number of channels: 1
Operating voltage: 5.5...40V DC
Kind of integrated circuit: IMC; motor controller
товару немає в наявності
В кошику
од. на суму грн.
| BTN8982TAAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 311.00 грн |
| IRFR3910TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCW68FE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| BCW68HE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.









